CN110068576B - A thermoelectric two-field in-situ atmosphere testing system under an optical microscope - Google Patents
A thermoelectric two-field in-situ atmosphere testing system under an optical microscope Download PDFInfo
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- CN110068576B CN110068576B CN201910359998.7A CN201910359998A CN110068576B CN 110068576 B CN110068576 B CN 110068576B CN 201910359998 A CN201910359998 A CN 201910359998A CN 110068576 B CN110068576 B CN 110068576B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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Abstract
本发明提供一种光学显微镜下热电两场原位气氛测试系统，采用的技术方案是一种光学显微镜下热电两场原位气氛测试系统，包括光学显微镜、电学工作站、与电学工作站连接的样品台及为样品台腔室提供气氛环镜的气路系统，关键在于，所述样品台中包括集成电路测试台和设置在其下方、安装有原位芯片的芯片安装台组件，集成电路测试台中包括底座、安装在底座上的探针密封组件和电路板及限位在探针密封组件中、具有弹性探头的探针，电路板下压时，探头与原位芯片的电极之间形成自密封结构。有益效果是本系统在光学显微镜下完成原位气体加热、真空加热及电学实验等多类型实验，为原位透射实验提供依据，操作简便；实验风险低、成本低。
The invention provides a thermoelectric two-field in-situ atmosphere testing system under an optical microscope. The technical scheme adopted is a thermoelectric two-field in-situ atmosphere testing system under an optical microscope, which includes an optical microscope, an electrical workstation, and a sample stage connected to the electrical workstation. And the gas circuit system for providing the atmosphere ring mirror for the sample stage chamber, the key lies in that the sample stage includes an integrated circuit test stage and a chip mounting stage assembly arranged below it and mounted with an in-situ chip, and the integrated circuit test stage includes a base , The probe sealing assembly and the circuit board installed on the base and the probe with elastic probe are limited in the probe sealing assembly. When the circuit board is pressed down, a self-sealing structure is formed between the probe and the electrode of the in-situ chip. The beneficial effects are that the system completes multiple types of experiments such as in-situ gas heating, vacuum heating and electrical experiments under an optical microscope, provides a basis for in-situ transmission experiments, is easy to operate, and has low experimental risk and low cost.
Description
Technical Field
The invention relates to the technical field of in-situ electrothermal performance characterization equipment, in particular to a thermoelectric two-field in-situ atmosphere test system under an optical microscope.
Background
The thermoelectric and phase-change properties of the material are dynamically researched in situ, in real time by adopting the in-situ projection electron microscope technology, so that a plurality of physical properties of the material and a device can be reflected, the design and performance optimization of the material are facilitated, the research and development efficiency of a new material is greatly improved, the utilization rate of a functional material is further improved, and the upgrading transformation of the existing energy industry structure is promoted. The in-situ transmission electron microscope technology is an advanced means for dispersing a sample on an in-situ chip, observing and researching the property-structure relationship of the material and the dynamic change thereof and researching the physical and electrochemical properties of a low-dimensional structure by applying the transmission electron microscope under the molecular scale or the atomic scale of the material. The adopted in-situ chip integrates more and more physical and chemical functions, and provides in-situ heating and electrical environments for representing the dynamic structure and properties of the material in thermal and electrical environments.
In recent years, the in-situ simulation environment transmission electron microscope analysis characterization technology is rapidly developed, but the popularization application rate is far from insufficient, the main problems are that the technical difficulty of designing and manufacturing an in-situ simulation environment and a multi-field coupling function sample rod system is high, the structure of a transmission electron microscope sample rod with a temperature changing function is complex, the function is single, the technical requirement is high, especially in China, the transmission electron microscope system and the in-situ simulation environment sample rod system are imported by foreign companies and are high in price, so that the use requirement is extremely high, the equipment is seriously insufficient, on the other hand, the in-situ projection electron microscope has high technical requirement on a user, the operation can be carried out only through professional training, on the one hand, the test efficiency and the development of scientific research are seriously influenced, on the other hand, the test cost is very high, and great burden is increased for scientific research and enterprises.
As an important component, the in-situ transmission electron microscope sample rod almost occupies half of the price of a transmission electron microscope, has high technical requirements, complex operation, high cost and high risk for a user, and seriously hinders the popularization and the application of the in-situ transmission electron microscope characterization technology. The size of the used in-situ chip is small, the process sizes of a heating component and an electrical test circuit which are attached to the in-situ chip are generally in the micron or nanometer level, the process requirement is high, and the cost is high; the electrode interface of outflow is 0.5mm usually, and electrode interval minimum distance is 0.2mm, for guaranteeing the experiment accuracy, need guarantee to contact with the chip electrode of normal position well when designing normal position emulation environment and multi-field coupling function sample rod system and normal position sample platform testing arrangement, among the existing equipment, the electrode interface of outflow adopts purpose-made tungsten needle of bending to contact with the chip electrode usually, does not have the sealing effect, easy ionized gas under the atmosphere environment, and the tungsten needle of bending is the customization piece, and customization is costly, does not have the commonality. The electrodes are isolated in the in-situ transmission electron microscope sample rod in a manner of sealing the upper chip and the lower chip, and then the electrodes are in contact connection.
The efficiency of applying the in-situ transmission electron microscope technology is low due to factors such as long experimental period, high cost, high risk and the like. Long cycle, high risk is mainly reflected by determining in-situ parameters such as gas flow, gas pressure and temperature parameters through multiple in-situ transmission experiments. Unreasonable experimental parameters easily cause the film of the in-situ chip in the nano reaction chamber to break, so that gas and sample particles leak to the vacuum chamber of the transmission electron microscope, the electron microscope is damaged, and the cost and risk are further increased. Therefore, the structure is simplified, the cost is reduced, and the technical problem which needs to be solved urgently in the field of in-situ simulation environmental material analysis is solved.
Disclosure of Invention
In order to solve the technical problems of high cost, high requirement and high technical requirement of personnel of the conventional in-situ electric heating performance characterization and analysis equipment, the invention provides a thermoelectric two-field in-situ atmosphere test system under an optical microscope.
The technical scheme adopted by the invention is as follows:
the utility model provides a two normal position atmosphere test system of thermoelectricity under optical microscope, includes optical microscope, electricity workstation, the sample platform of being connected with electricity workstation and the gas circuit system that provides the atmosphere environment for the sample platform cavity, and the key lies in, including integrated circuit testboard and set up below, install the chip mount table subassembly of normal position chip in the sample platform, including the base in the integrated circuit testboard, install probe seal assembly and circuit board on the base and spacing in probe seal assembly, have the probe of elastic probe, when the circuit board pushes down, form self-sealing structure between the electrode of probe and normal position chip.
Furthermore, the probe structure comprises a needle cylinder and a probe elastically connected to the needle cylinder, and the probe extends out of the lower end face of the probe sealing assembly and is in contact with an electrode of the in-situ chip.
Preferably, the probe sealing assembly structure sequentially comprises an upper sealing plate, a probe guide plate and a lower sealing plate from top to bottom, a pressure spring is limited between the probe guide plate and the lower sealing plate, and when the circuit board is pressed downwards, self-sealing structures between the lower sealing plate and the in-situ chip and between the probe and the electrode are formed by means of the pressure spring.
Furthermore, the probe is limited in a communicating hole formed by the upper sealing plate, the probe guide plate and the lower sealing plate, the pressure spring is limited in a through hole formed in the probe guide plate, the upper end of the probe is fixedly connected with the circuit board, and a self-sealing structure between the lower sealing plate and the in-situ chip and between the probe and the electrode is formed by means of the pressure spring when the circuit board is pressed downwards.
Further, the communication hole comprises a main body part in the middle and necking parts at two ends.
Furthermore, the circuit board is connected with the probe guide plate of the upper sealing plate in a positioning mode, and the lower sealing plate is hung below the probe guide plate and has the freedom degree of moving up and down when the pressure spring is compressed and stretched.
Further, including air inlet and the gas outlet of seting up the chip on the chip mount table subassembly and holding the intracavity in the gas circuit system, air inlet, gas outlet communicate with air supply, vacuum pump respectively to form inlet channel, air outlet channel.
Further, the gas path system also comprises a pressure gauge, a flow meter and a valve which are respectively arranged on the gas inlet channel and the gas outlet channel; the gas source is carbon monoxide, acetylene, methane, oxygen, carbon dioxide, hydrogen, nitrogen or air.
Furthermore, a sample bearing film, an electrode, a matched heating assembly and an electrical test circuit sample bearing film are arranged on the in-situ chip; the sample bearing film is a carbon film or a SiN film; the heating component is a metal wire or a SiC film; the electrical test circuit is a four-electrode IV test circuit; the width of the electrode is not less than 0.4 mm.
Furthermore, the circuit board of the integrated circuit test bench is provided with an electrical interface matched with the electrical workstation and an observation window corresponding to the in-situ chip sample bearing film, and the observation window is made of quartz glass or acrylic materials.
In the technical scheme, the thermoelectric two-field in-situ atmosphere testing system under the optical microscope comprises the optical microscope, an electrical workstation, a sample stage and a matched gas path system, wherein the sample stage is suitable for being arranged under the optical microscope to carry out in-situ atmosphere testing, the sample stage is used for bearing a sample, the gas path system further provides an atmosphere environment loop mirror for a cavity of the sample stage, and the electrical workstation can provide a stable power supply, current/voltage for testing. The probe is limited in the probe sealing component, the lower end probe extends out of the lower end face of the probe sealing component so as to be contacted with an electrode of the in-situ chip, when the circuit board is pressed downwards, the probe of the probe is firstly contacted with the electrode of the in-situ chip and is continuously pressed downwards, the probe is contracted, the lower planes of the probe sealing component and the base can be firmly attached to the surface of the electrode of the in-situ chip, and the probe of the probe is also tightly attached to the electrode of the chip, so that the self-sealing of the probe and the electrode of the in-situ chip is formed in the equipment assembling process, the sealing connection of the probe and the electrode of the chip is ensured, the probe is not contacted with gas in a cavity of the in-situ chip, the gas is prevented from being easily ionized under the atmosphere environment, the test accuracy is ensured, and compared with the technology of adopting two atmosphere cavities of the in-situ chip sealing chip in the prior art, one chip is saved, the test cost is greatly reduced, and the assembling process is self-sealed, the operation is simple. The sealing performance is influenced by the specification and the pressing length of the spring, and the contact force between the probe and the electrode is influenced by the contraction length of the probe head and can be selected and adjusted according to the specific requirements of the experiment.
The invention has the beneficial effects that: (1) according to the thermoelectric two-field in-situ atmosphere testing system under the optical microscope, in-situ gas heating, vacuum heating, electrical experiments and other various experiments are completed under the optical microscope, a basis is provided for in-situ transmission experiments, the operation is simple and convenient, and operators can start up without strict training; the experimental risk is low, the optical microscope and other accessory parts cannot be damaged, and the experimental efficiency and the popularization rate are greatly improved; (2) the direct-insert probe and the in-situ chip electrode form self-adaptive sealing, so that compared with a two-chip sealing mode in the prior art, the experiment cost is greatly reduced; (3) the requirements on the technological properties of the in-situ chip are reduced, the manufacturing cost of the chip is greatly reduced, and the processing is easy.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a sample stage in a thermoelectric two-field in-situ atmosphere testing system under an optical microscope according to the present invention;
FIG. 2 is a schematic view of a chip mounting table assembly in a sample table;
FIG. 3 is an exploded view of the IC testing platform of the sample platform;
FIG. 4 is a schematic cross-sectional view of the probe sealing seat during pressing;
FIG. 5 is a schematic cross-sectional view of the probe sealing seat after pressing;
FIG. 6 is a schematic diagram of an assembled product structure of an IC testing table;
FIG. 7 is a schematic diagram of an in-situ chip structure;
the probe comprises a chip mounting table component 1, a chip accommodating cavity 1, a gas source interface 1, a gas outlet pipeline interface 1, a gas inlet 1, a gas outlet 1, a gas inlet 1, an integrated circuit test table 2, an in-situ chip 2, an electrode 3, an integrated circuit test table 4, a circuit board 4, an observation window 4, an electrical interface 4, a probe sealing component 5, a probe guide plate 6, a base 7, a sealing rubber ring 8, a lower sealing plate 9, a probe 9-1, a needle cylinder 9-2, a probe 9-3, a probe spring 10, a pressure spring 11, a probe guide plate 11-1, a through hole 12, an upper sealing plate 13 and a probe sealing seat mounting positioning pin 1.
Detailed Description
The structure and operation of the thermoelectric two-field in-situ atmosphere testing system under an optical microscope provided by the present invention are described in detail below with specific embodiments, but the protection scope of the present invention is not limited in any way, and modifications or similar substitutions made by those skilled in the art according to the technical solutions should be included in the protection scope of the present invention.
Example 1
A thermoelectric two-field in-situ atmosphere testing system under an optical microscope comprises the optical microscope, an electrical workstation, a sample stage connected with the electrical workstation, and an air path system for providing an atmosphere environment for a chamber of the sample stage. The sample stage is used for bearing a sample and is arranged under an optical microscope for in-situ atmosphere test; the gas path system provides an atmosphere environment for the chamber of the sample stage; the electricity workstation can provide power, voltage and carry out charge-discharge operation etc. for the test, and electricity workstation front end passes through the net twine and links to each other with the computer, and the rear end is connected with the sample platform through corresponding electric interface. As a key technology, the sample stage comprises an integrated circuit test stage 3 and a chip mounting stage assembly 1 which is arranged below the integrated circuit test stage and is provided with an in-situ chip 2, the structure of the chip mounting stage assembly 1 is shown in fig. 1, the chip mounting stage assembly 1 is used for mounting the in-situ chip 2 and is connected with a gas path system to provide a gas environment for an in-situ experiment, and the structure of the chip mounting stage assembly is shown in fig. 2; the integrated circuit test bench 3 is provided with probes 9 for contacting and connecting with the electrodes of the in-situ chip 2, the number of the probes is matched with the number and the positions of the electrodes of the in-situ chip 2, and the in-situ chip 2 can be customized or purchased in the market, preferably a silicon-based chip. The structure of the integrated circuit test bench 3 is shown in figure 3, and comprises a base 6, a probe sealing component 5, a circuit board 4 and a probe 9 limited in the probe sealing component 5, wherein the probe sealing component 5 and the circuit board 4 are installed on the base 6, the probe 9 is limited in the probe sealing component 5, the lower end probe 9-2 extends out of the lower end surface of the probe sealing component 5 so as to be contacted with an electrode 2-1 of an in-situ chip 2, the probe 9-2 of the probe 9 has elastic telescopic freedom, when the circuit board 4 is pressed downwards, the probe 9-2 of the probe 9 is firstly contacted with the electrode 2-1 of the in-situ chip 2 and is continuously pressed downwards, the probe 9-2 is contracted, the lower planes of the probe sealing component 5 and the base 6 can be firmly attached to the upper surface of the electrode 2-1 of the in-situ chip 2, the probe 9-2 of the probe 9 is also tightly attached to the electrode 2-1 of the in-situ chip 2, this configuration allows for the formation of an automatic seal of the probe 9 with the electrode 2-1 of the in situ chip 2 during the device assembly process.
Preferably, the structure of the probe 9 is as shown in fig. 5, and includes a syringe 9-1 and a probe 9-2 elastically connected in the syringe 9-1, in this embodiment, the upper end of the probe 9-2 is provided with a probe spring 9-3, and the upper and lower ends of the probe spring 9-3 are respectively fixedly connected, such as welded, with the syringe 9-1 and the probe 9-2. The needle cylinder 9-1 is used for positioning and installing the probe 9, the probe 9-2 is limited in a hole of the needle cylinder 9-1, the lower end of the probe 9-2 extends out of the lower end face of the probe sealing assembly 5, and when the probe 9-2 is pressed upwards, the probe spring 9-3 contracts and has tension, so that the probe 9-2 is in pressing contact with the electrode 2-1 of the in-situ chip 2.
The probe sealing assembly 5 is used for limiting the probe 9, in this embodiment, the probe sealing assembly 5 includes, as shown in fig. 3 to 5, an upper sealing plate 12, a probe guide plate 11, and a lower sealing plate 8 in sequence from top to bottom, a compression spring 10 is limited between the probe guide plate 11 and the lower sealing plate 8, and when the circuit board 4 is pressed down and after the circuit board is in a pressed down state, due to the presence of the compression spring 10, an automatic sealing structure is also formed between the lower sealing plate 8 and the home chip 2, so that an effect of adaptive and tight sealing is achieved.
In this embodiment, in order to facilitate installation of a spring, a pressure spring, and the like, the upper sealing plate 12, the probe guide plate 11, and the lower sealing plate 8 are provided with communication holes, as shown in fig. 4, the probe 9 passes through the communication holes and both the upper and lower ends extend out of the communication holes, so that the upper end is connected to the circuit board 4 and the lower end is in contact with the in-situ chip 2.
In order to avoid the probe 9 from slipping off and to limit the probe 9 more accurately, the communication hole is preferably a special-shaped hole or a stepped hole and the like, and includes a main body part at the middle part and necking parts at two ends, and the probe 9-2 penetrates through the necking part at the lower end of the communication hole to be in contact with the electrode 2-1 of the in-situ chip 2. A spring can be additionally arranged between the shoulder (the connection part of the thin connecting part at the upper end and the middle part) of the needle cylinder 9-1 of the probe 9 and the upper port of the communicating hole (preferably, the connection part of the neck part at the upper end and the main body part), so that the probe 9 can be further elastically pressed down, and the self-adaptive close contact for a longer time is ensured. In order to ensure a sealing structure, the diameter of the probe 9-2 of the probe 9 is smaller than the diameter of the necking part at the lower end of the communicating hole, and the diameter of the necking part at the lower end of the communicating hole is smaller than the width of the electrode 2-1 of the in-situ chip 2, so that when the probe 9-2 is contacted with the electrode 2-1, the lower plane of the lower sealing plate 8 is firmly attached to the electrode surface (namely the upper surface) of the in-situ chip 2, no gap is left, and a good sealing effect is achieved. In practice, most preferably, the width of the electrode 2-1 of the in-situ chip 2 is usually selected to be 0.5mm, the contact diameter of the probe 9-1 is 0.17mm, the material is BeCu, the surface is plated with Au, the maximum current tested is not less than 1.7A, the intrinsic resistance is less than 50m omega, and the compressible distance of the contact probe 9-2 is not less than 1 mm.
In order to accurately limit the pressure spring 10, a through hole 11-1 is formed in the probe guide plate 11, the pressure spring 10 is limited in the through hole 11-1, the circuit board 4, the upper sealing plate 12 and the probe guide plate 11 are connected in a positioning mode through parts such as bolts and pins for assembly, the lower sealing plate 8 is hung below the probe guide plate 11, the pressure spring 10 is limited and installed in the through hole 11-1 of the probe guide plate 11, and when the pressure spring 10 is compressed or stretched, the lower sealing plate 8 moves up and down. The auxiliary device is provided with accessories such as screws and positioning pins for conventional installation, thereby ensuring accurate installation and positioning. When the circuit board 4 is pressed downwards, as shown in a state shown in fig. 4, the probe 9-2 of the probe 9 is firstly contacted with the electrode 2-1 of the in-situ chip 2, the probe 9-2 is continuously pressed downwards, the lower plane of the lower sealing plate 8 is further contacted with the upper surface of the in-situ chip 2, the probe is continuously pressed downwards, the upper plane of the lower sealing plate 8 is contacted with the lower plane of the probe guide plate 11, at the moment, the pressure spring 10 is in a working state after being pressed, the lower plane of the lower sealing plate 8 is firmly attached to the surface of the in-situ chip 2 under the action of the pressure force of the pressure spring 10, and the probe 9-2 of the probe 9 is also tightly attached to the electrode 2-1 of the in-situ chip 2, as shown in fig. 5. The structure ensures that the self-sealing structure between the lower sealing plate 8 and the in-situ chip 2 and between the probe 9 and the electrode 2-1 is formed by means of the tension of the pressure spring 10 in the assembling process of the device, so that the sealing connection between the probe 9 and the chip electrode 2-1 is ensured, the self-sealing structure is not in contact with the gas in the chip accommodating cavity 1-1, the gas is prevented from being easily ionized under the atmosphere environment, the point discharge is avoided, and the accuracy of the test is ensured. The sealing performance is influenced by the specification and the compression length of the compression spring 10, and the contact force between the probe 9 and the electrode 2-1 is influenced by the probe spring 9-3 and can be selected and adjusted according to the specific requirements of the experiment.
A chip containing cavity 1-1 is formed in the chip mounting platform assembly 1, an air inlet 1-4 and an air outlet 1-5 are formed in the chip containing cavity 1-1, and an air source interface 1-2 and an air outlet pipeline interface 1-3 are further formed in the chip mounting platform assembly 1. The air source interface 1-2 is communicated with an air source by means of a pipeline, a flange connection and the like, and the air inlet 1-4 is communicated with the air source interface 1-2 to form an air inlet channel; the air outlet 1-5 is communicated with an air outlet pipeline interface 1-3, and the air outlet pipeline interface 1-3 is communicated with a vacuum pump by means of a pipeline, a flange connection and the like to form an air outlet channel, namely a vacuumizing channel. Conventionally, a pressure sensor connected to a computer is provided in the chip-accommodating chamber 1-1 at the gas inlet 1-4 or at a side near the gas inlet 1-4 for detecting the pressure in the chip-accommodating chamber 1-1. The gas circuit system that inlet channel, outlet channel formed provides gaseous environment for the in situ experiment, for the seal that guarantees the environment, still is equipped with the sealing washer on the chip mounting table subassembly 1 usually. Pressure gauges, flow meters and valves are conventionally arranged on the air inlet channel and the air outlet channel. The gas source is carbon monoxide, acetylene, methane, oxygen, carbon dioxide, hydrogen, nitrogen or air.
The in-situ chip 2 can adopt the design of an eight-electrode thermoelectric chip existing in the market, the structure is shown in figure 6, and a sample bearing film, an electrode 2-1, a matched heating assembly and an electrical test circuit are arranged on the in-situ chip; the sample bearing film is used for bearing a sample, the thickness is generally between 100 and 200nm, the thickness is preferably 120nm, and the material is preferably a carbon film or SiN film, so that electrons can easily penetrate through the sample bearing film for a projection electron microscope to form an image, the sample bearing film for the projection electron microscope with high process requirements is not needed, and the chip cost is greatly reduced. 8 electrodes 2-1 are provided, wherein 4 electrodes are metal heating wire electrodes, the other 4 electrodes are electrical testing electrodes, 8 probes 9 are matched and arranged on the integrated circuit test bench 3 designed according to the chip and are respectively contacted with the electrodes 2-1, and the width of the electrodes 2-1 is not less than 0.4 mm. The heating component is a metal wire or a SiC film; the electrical test circuit is a four-electrode IV test circuit, can meet all electrical tests, and is higher in precision. The in-situ chip 2 can also customize a domestic chip according to the experimental requirement, the testing system has low process requirements on the in-situ chip 2, and compared with the existing electron microscope in-situ chip, the cost is greatly reduced. The sample is positioned on the sample bearing film, and the sample bearing film corresponds to the position of the observation window 4-1 of the circuit board 4, so that the sample can be observed conveniently.
An electrical interface 4-2 connected with the electrical workstation and an observation window 4-1 corresponding to the sample bearing film of the in-situ chip 2 are arranged on a circuit board 4 of the integrated circuit test bench 3. Fig. 1 and 3 both show that the electrical workstation provides power, voltage, etc. to the electrode 2-1 through the electrical interface 4-2, and the temperature control of the in-situ chip 2, the measurement of electrical parameters, etc. can be realized by adjusting the electrical workstation, in this embodiment, the electrical workstation uses the american Keithley table, the electrical interface 4-2 is correspondingly matched with the Keithley table, and the electrical interface 4-2 is directly connected to the Keithley table; the observation window 4-1 is made of quartz glass or acrylic material.
When the test system is used specifically, a powder sample can be directly prepared by solution dispersion, a rod-shaped strip sample can be prepared by focused ion beam processing and is positioned on a sample bearing film of the in-situ chip 2, and then the in-situ chip 2 is arranged on the chip mounting platform component 1. And then assembling the integrated circuit test bench 3, wherein the assembly method comprises the steps of firstly assembling the probe sealing assembly 5, arranging the pressure spring 10 into the through hole 11-1 of the probe guide plate 11, and connecting the probe guide plate 11 and the probe upper sealing plate 12 by using a screw and a probe sealing seat mounting positioning pin 13. Then the probe 9 and the lower sealing plate 8 are installed, the assembled probe sealing assembly 5 is placed in the installation groove of the base 6 and fixed by a matched screw, then the sealing rubber ring 7 is placed, the circuit board 4 is installed, and the integrated circuit test board 3 is assembled by corresponding positioning pins and screws. Then, the integrated circuit test board 3 and the chip mounting board assembly 1 provided with the in-situ chip 2 are assembled and placed under an optical microscope.
And an air source interface 1-2 and an air outlet pipeline interface 1-3 on the mounting platform assembly 1 are respectively connected with an air source and a vacuum pump and form an air path system by matching with a pressure gauge, a flowmeter and a valve. The electrical interface 4-2 on the circuit board 4 is connected with an electrical workstation, which is connected with a computer. During testing, the chip accommodating cavity 1-1 (namely an experimental cavity) is usually evacuated by a vacuum pump, gas in the chip accommodating cavity 1-1 is exhausted, the pressure and the vacuum degree of the chip accommodating cavity 1-1 are detected by corresponding pressure sensors, the pressure sensors are connected with a computer and transmit pressure information in the chip accommodating cavity 1-1 to the computer, and the pressure sensors are usually arranged at the positions of air inlets 1-4 or positions close to the air inlets 1-4 in the chip accommodating cavity 1-1; then, experimental gas is filled in from a gas source, and the control of the gas circuit system is formed by adjusting a flow meter on the gas inlet pipeline and matching with a pressure gauge. When testing the thermal property or the electrical property of the material, a manufacturer provides a comparison table of the temperature and the current of the in-situ chip 2 corresponding to the in-situ chip 2 for bearing a sample, and realizes the control of the temperature of the in-situ chip 2 by adjusting the input current of an electrical workstation, thereby being capable of carrying out in-situ electric field test and thermal field test.
The system constructs a material performance system based on in-situ atmosphere heating and electrical testing under an optical microscope, the whole testing device has a simple structure and is convenient to use, on one hand, the requirements on the process performance of the in-situ chip 2 are reduced, and the manufacturing cost of the in-situ chip 2 is greatly reduced; on the other hand, the number of the in-situ chips 2 is reduced, the sealing performance is good, the probes 9 are hermetically connected with the electrodes 2-1 of the in-situ chips 2, and the lower sealing plate 8 is further sealed with the upper surfaces of the electrodes 2-1, so that the probes 9 are prevented from contacting with the gas in the chip accommodating cavities 1-1, the gas is prevented from being easily ionized in the atmosphere environment, and the accuracy of the test is ensured; the system has the advantages that the system for testing the thermoelectric two-field in-situ atmosphere under the optical microscope is simple and convenient to operate, and operators can operate without strict training; the experimental risk is low, can not harm optical microscope and other accessory parts. By applying the system, the electrical characteristics of materials such as a semiconductor thin film device, a nanorod, a nanotube and the like can be measured in an in-situ environment, qualitative and quantitative analysis of various experiments such as in-situ gas heating, vacuum heating, electrical experiments and the like can be completed, and experimental scheme design basis is provided for further in-situ transmission electrical tests or in-situ scanning electrical tests. The method comprises the steps of characterizing the morphological characteristics of a material under an in-situ gas heating or in-situ vacuum heating condition under an optical microscope, determining heating parameters and gas parameters of the material according to the change of the morphological characteristics, and providing gas and heating parameter basis for in-situ experiments for subsequent formulation of reasonable in-situ transmission electron microscope experimental schemes. Under the optical microscope, the test sample can be used as a design scheme in the comparison experiment of the in-situ transmission electron microscope experiment (the in-situ transmission electron microscope experiment itself can be influenced by the electron beam) without being influenced by the electron beam. Therefore, the system has great significance for prejudging the experiment result, setting reasonable in-situ parameters, formulating a mature experiment scheme, shortening the in-situ transmission experiment period, reducing the experiment economic cost and avoiding the experiment risk.
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