CN110068576A - Thermoelectricity two atmosphere test macros in situ under a kind of optical microscopy - Google Patents

Abstract

The invention provides a thermoelectric two-field in-situ atmosphere testing system under an optical microscope, and the adopted technical scheme is a thermoelectric two-field in-situ atmosphere testing system under an optical microscope, comprising an optical microscope, an electrical workstation, and a sample stage connected to the electrical workstation and a gas circuit system for providing an atmosphere ring mirror for the sample stage chamber, the key lies in that the sample stage includes an integrated circuit test table and a chip mounting table assembly arranged below it and mounted with an in-situ chip, and the integrated circuit test table includes a base , The probe sealing assembly and the circuit board installed on the base and the probe with elastic probes limited in the probe sealing assembly, when the circuit board is pressed down, a self-sealing structure is formed between the probe and the electrodes of the in-situ chip. The beneficial effects are that the system completes various types of experiments such as in-situ gas heating, vacuum heating and electrical experiments under an optical microscope, provides a basis for in-situ transmission experiments, is easy to operate, and has low experimental risk and low cost.

Description

A thermoelectric two-field in-situ atmosphere testing system under an optical microscope

technical field

The invention relates to the technical field of in-situ electro-thermal performance characterization equipment, in particular to a thermo-electric two-field in-situ atmosphere testing system under an optical microscope.

Background technique

Using in situ TEM technology to study the thermoelectric and phase transition properties of materials in situ, real-time and dynamically, it can reflect many physical properties of materials and devices, which is conducive to promoting the design and performance optimization of materials, and greatly improving the research and development efficiency of new materials. Further improve the utilization rate of functional materials and promote the upgrading and transformation of the existing energy industry structure. In situ TEM technology is to disperse the sample on the in situ chip, and use TEM to observe and study the material property-structure relationship and its dynamic changes at the molecular or atomic scale of materials, and to study the physical and electrochemical properties of low-dimensional structures. advanced means. The in-situ chips used also integrate more and more physical and chemical functions, providing in-situ heating and electrical environments for characterizing the dynamic structure and properties of materials in thermal and electrical environments.

In recent years, in-situ simulation environment transmission electron microscopy analysis and characterization technology has developed rapidly, but the popularization and application rate is still far from enough. The main problem is that it is difficult to design and manufacture in-situ simulation environment and multi-field coupling function sample rod system, and it has variable temperature The functional transmission electron microscope sample holder has complex structure, single function and high technical requirements. Especially in my country, the transmission electron microscope system and the in-situ simulation environment sample holder system are imported by foreign companies, which are expensive, resulting in a huge demand for use. The equipment is seriously insufficient. On the other hand, the in-situ TEM requires high technical requirements for users and requires professional training to operate. On the one hand, it seriously affects the test efficiency and scientific research progress. Businesses have added a great burden.

In situ TEM sample holder is an important component, and its price accounts for almost half of the price of TEM. The user has high technical requirements, complicated operation, high cost and high risk, which seriously hinders the popularization and application of in situ TEM characterization technology. The size of the in-situ chip used is small, and the size of the heating components and electrical test circuits attached to the in-situ chip is usually micron or nanometer level, which requires high process requirements and high cost; the outflow electrode interface is usually 0.5mm, and the electrode The minimum distance between them is 0.2mm. In order to ensure the accuracy of the experiment, it is necessary to ensure good contact with the in-situ chip electrodes when designing the in-situ simulation environment, the multi-field coupling function sample rod system and the in-situ sample stage test device. The outflow electrode interface usually uses a special bent tungsten needle to contact the chip electrode, which does not have a sealing effect and is easy to ionize the gas in the atmosphere. The bent tungsten needle is a customized part, and the customization cost is high and has no versatility. In the in-situ TEM sample holder, the electrodes are isolated by sealing the upper and lower chips, and then the electrodes are contacted and connected. This structure requires two in-situ chips, which also increases the cost of in-situ simulation environment TEM analysis.

The long experimental period, high cost, high risk and other factors make the application of in situ TEM technology inefficient. Long-term, high-risk is mainly reflected in the determination of in-situ parameters, such as airflow, air pressure and temperature parameters, through multiple in-situ transmission experiments. Unreasonable experimental parameters can easily cause the film of the in-situ chip in the nano-reaction chamber to rupture, so that gas and sample particles leak into the vacuum chamber of the transmission electron microscope, thereby damaging the electron microscope and further increasing the cost and risk. Therefore, simplifying the structure and reducing the cost is an urgent technical problem to be solved in the field of in-situ simulation environment material analysis.

SUMMARY OF THE INVENTION

In order to solve the technical problems that the existing in-situ electro-thermal performance characterization and analysis equipment is expensive, high requirements, and high technical requirements for personnel, the present invention provides a thermoelectric two-field in-situ atmosphere testing system under an optical microscope, which adopts a workstation and a sample stage based on an optical microscope. And the supporting gas circuit system, the in-situ probe is cleverly designed with the help of the elastic probe and the in-situ chip electrode self-adaptively and closely contacting the technical scheme, which realizes the automatic sealing of the probe and the electrode in the in-situ chip performance test, which greatly reduces the test cost. And easy to operate.

The technical scheme adopted in the present invention is:

A thermoelectric two-field in-situ atmosphere testing system under an optical microscope, comprising an optical microscope, an electrical workstation, a sample stage connected to the electrical workstation, and a gas circuit system providing an atmosphere ring mirror for a chamber of the sample stage, the key lies in that the sample stage is in the sample stage. It includes an integrated circuit test table and a chip mounting table assembly arranged below it and mounted with an in-situ chip. The integrated circuit test table includes a base, a probe sealing assembly mounted on the base, a circuit board, and a limiter in the probe sealing assembly , The probe with elastic probe, when the circuit board is pressed down, a self-sealing structure is formed between the probe and the electrode of the in-situ chip.

Further, the probe structure includes a needle cylinder and a probe elastically connected to the needle cylinder, and the probe extends out of the lower end surface of the probe sealing assembly to contact the electrodes of the in-situ chip.

Preferably, the probe sealing assembly structure includes an upper sealing plate, a probe guiding plate and a lower sealing plate in order from top to bottom, a compression spring is positioned between the probe guiding plate and the lower sealing plate, and the circuit board When pressing down, a self-sealing structure is formed between the lower sealing plate and the in-situ chip and between the probe and the electrode by means of the compression spring.

Further, the probe is limited to the communication hole formed by the upper sealing plate, the probe guiding plate and the lower sealing plate, the compression spring is limited to the through hole opened by the probe guiding plate, and the upper end of the probe is fixedly connected to the circuit board, When the circuit board is pressed down, a self-sealing structure is formed between the lower sealing plate and the in-situ chip and between the probe and the electrode by means of a compression spring.

Further, the communication hole includes a main body part in the middle and constricted parts at both ends.

Further, the circuit board and the probe guide plate of the upper seal plate are positioned and connected, and the lower seal plate is hung under the probe guide plate and has a degree of freedom of up and down movement when the compression spring is compressed and extended.

Further, the air circuit system includes an air inlet and an air outlet opened in the chip accommodating cavity on the chip mounting table assembly, and the air inlet and the air outlet are respectively communicated with the air source and the vacuum pump, thereby forming an air intake. channel, outlet channel.

Further, the gas circuit system also includes a pressure gauge, a flow meter and a valve respectively arranged on the inlet channel and the outlet channel; the gas source is carbon monoxide, acetylene, methane, oxygen, carbon dioxide, hydrogen, nitrogen or air. .

Further, the in-situ chip is provided with a sample carrier film, electrodes and matching heating components and an electrical test circuit sample carrier film; the sample carrier film is a carbon film or a SiN film; the heating component is a metal wire or SiC film; the electrical test circuit is a four-electrode IV test circuit; the width of the electrodes is not less than 0.4mm.

Further, the circuit board of the integrated circuit test bench is provided with an electrical interface matched with the electrical workstation and an observation window corresponding to the in-situ chip sample carrier film sample carrier film, and the observation window is made of quartz glass or acrylic material.

In the above technical solution, the thermoelectric two-field in-situ atmosphere test system under the optical microscope includes an optical microscope, an electrical workstation, a sample stage and a matching gas circuit system. The sample stage is suitable for in-situ atmosphere testing under an optical microscope. It is used to carry the sample, and the gas circuit system further provides an atmosphere ring mirror for the chamber of the sample stage, and the electrical workstation can provide stable power supply, current/voltage for testing. The key of the present invention is that the sample stage structure includes an integrated circuit test bench and A chip mounting table assembly with an in-situ chip installed, the integrated circuit test table is installed above the chip mounting table assembly, and the integrated circuit test table includes a base, a probe sealing assembly, and a probe, a circuit board, and a probe sealing assembly in the limit. and the circuit board are installed on the base, the probe of the probe has an elastic expansion and contraction degree of freedom, the probe is limited to the probe sealing assembly, and the lower end probe extends out of the lower end surface of the probe sealing assembly to contact the electrodes of the in-situ chip, and the circuit board When pressing down, the probe head of the probe contacts the electrode of the in-situ chip first, and continues to press down, the probe shrinks, the lower plane of the probe sealing assembly and the base will be firmly attached to the surface of the in-situ chip electrode, and the probe The probe is also closely attached to the electrode of the chip. This structure enables the self-sealing of the probe and the in-situ chip electrode during the assembly process of the device, which ensures the sealed connection between the probe and the chip electrode, and does not connect with the in-situ chip chamber. The gas contact avoids the easy ionization of gas in the atmosphere environment, thus ensuring the accuracy of the test, and compared with the technology of using two in-situ chips to seal the chip atmosphere cavity in the prior art, it saves one chip and greatly reduces the experiment cost. , and the assembly process is self-sealing and easy to operate. The sealing performance is affected by the size of the spring and the compression length, and the contact force between the probe and the electrode is affected by the retraction length of the probe, which can be selected and adjusted according to the specific requirements of the experiment.

The beneficial effects of the present invention: (1) The thermoelectric two-field in-situ atmosphere test system provided by the present invention can complete various types of experiments such as in-situ gas heating, vacuum heating and electrical experiments under the optical microscope, which is an in-situ transmission experiment. Provide evidence, easy to operate, operators can get started without strict training; low experimental risk, will not damage the optical microscope and other accessories, greatly improve the test efficiency and popularity; (2) use in-line probe and original The in-situ chip electrodes form an adaptive seal, which greatly reduces the experimental cost compared with the two-chip seal in the prior art; (3) The requirements for the in-situ chip process performance are reduced, which greatly reduces the chip fabrication cost and is easy to process.

Description of drawings

Fig. 1 is the overall structure schematic diagram of the sample stage in the thermoelectric two-field in-situ atmosphere test system under the optical microscope of the present invention;

Fig. 2 is the structural schematic diagram of the chip mounting stage assembly in the sample stage;

3 is a schematic diagram of the exploded structure of the integrated circuit test bench in the sample stage;

FIG. 4 is a schematic cross-sectional structure diagram of the probe sealing seat in the process of pressing down;

FIG. 5 is a schematic cross-sectional structure diagram of the probe sealing seat after pressing down;

FIG. 6 is a schematic structural diagram of an assembled product of an integrated circuit test bench;

FIG. 7 is a schematic diagram of an in-situ chip structure;

Among them, 1-chip mounting table assembly, 1-1, chip accommodating cavity, 1-2, air source interface, 1-3, air outlet pipeline interface, 1-4, air inlet, 1-5, air outlet, 2 , in-situ chip, 2-1, electrodes, 3, integrated circuit test bench, 4, circuit board, 4-1, observation window, 4-2, electrical interface, 5, probe seal assembly, 6, base, 7, Gasket, 8, Lower sealing plate, 9, Probe, 9-1, Syringe, 9-2, Probe, 9-3, Probe spring, 10, Compression spring, 11, Probe guide plate, 11- 1. Through hole, 12. Upper sealing plate, 13. Positioning pin for probe sealing seat.

Detailed ways

The structure and working principle of a thermoelectric two-field in-situ atmosphere test system under an optical microscope provided by the present invention are described in detail below with specific examples, but the protection scope of the present invention is not limited in any form. All improvements, modifications or similar substitutions made shall be included within the protection scope of the present invention.

Example 1

A thermoelectric two-field in-situ atmosphere testing system under an optical microscope, comprising an optical microscope, an electrical workstation, a sample stage connected to the electrical workstation, and a gas circuit system providing an atmosphere ring mirror for a chamber of the sample stage. The sample stage is used to carry the sample and install it under the optical microscope for in-situ atmosphere testing; the gas circuit system provides an atmosphere ring mirror for the chamber of the sample stage; the electrical workstation can provide power, voltage and charge and discharge operations for the test, etc. The electrical workstation The front end is connected to the computer through a network cable, and the rear end is connected to the sample stage through a corresponding electrical interface. As a key technology, the sample stage includes an integrated circuit test stage 3 and a chip mounting stage assembly 1 arranged below it and mounted with an in-situ chip 2. The structure is shown in FIG. 1, and the chip mounting stage assembly 1 is used for in-situ installation. The chip 2 is connected to the gas circuit system to provide a gas environment for the in-situ experiment. The structure is shown in Figure 2; the integrated circuit test table 3 is provided with probes 9 for contacting and connecting with the electrodes of the in-situ chip 2. The number of probes is the same as The number and positions of electrodes of the in-situ chip 2 are matched, and the in-situ chip 2 can be customized or commercially available, preferably a silicon-based chip. The structure of the integrated circuit test bench 3 is shown in FIG. 3 , including the base 6 , the probe sealing assembly 5 , the circuit board 4 and the probes 9 limited in the probe sealing assembly 5 , and the probe sealing assembly 5 and the circuit board 4 are installed On the base 6 , the probe 9 is confined in the probe sealing assembly 5 and the lower end probe 9 - 2 protrudes from the lower end surface of the probe sealing assembly 5 so as to contact the electrode 2 - 1 of the in-situ chip 2 . The probe of the probe 9 9-2 has a degree of freedom of elastic expansion. When the circuit board 4 is pressed down, the probe 9-2 of the probe 9 first contacts the electrode 2-1 of the in-situ chip 2, and continues to press down, the head of the probe 9-2 shrinks, and the probe The lower plane of the needle sealing assembly 5 and the base 6 will be firmly attached to the upper surface of the electrode 2-1 of the in-situ chip 2, and the probe 9-2 of the probe 9 will also be closely attached to the electrode 2-1 of the in-situ chip 2. , this structure enables the automatic sealing of the probe 9 and the electrode 2-1 of the in-situ chip 2 during the assembly process of the device.

Preferably, the structure of the probe 9 is shown in FIG. 5, including a syringe 9-1 and a probe 9-2 elastically connected in the syringe 9-1. In this embodiment, the upper end of the probe 9-2 is installed with a The probe spring 9-3, the upper and lower ends of the probe spring 9-3 are respectively fixedly connected with the needle cylinder 9-1 and the probe 9-2, such as by welding. The needle cylinder 9-1 is used for positioning and installing the probe 9, the probe 9-2 is limited in the hole of the needle cylinder 9-1, and the lower end of the probe 9-2 protrudes from the lower end surface of the probe sealing assembly 5. When pressed upward, the probe spring 9-3 contracts and has tension, so that the probe 9-2 is in pressing contact with the electrode 2-1 of the in-situ chip 2.

The probe seal assembly 5 is used to limit the probe 9. In this embodiment, the structure of the probe seal assembly 5 is shown in FIGS. 3 to 5 , and includes an upper seal plate 12 and a probe guide plate in order from top to bottom. 11 and the lower sealing plate 8, a compression spring 10 is positioned between the probe guide plate 11 and the lower sealing plate 8. When the circuit board 4 is pressed down and after the pressing state, due to the existence of the compression spring 10, the lower sealing plate 8 An automatic sealing structure is also formed between the in-situ chip 2, which has the effect of self-adaptive tight sealing.

In this embodiment, in order to facilitate the installation of springs, compression springs, etc., the upper sealing plate 12 , the probe guide plate 11 and the lower sealing plate 8 have communication holes. As shown in FIG. 4 , the probes 9 pass through the communication holes and the upper and lower ends Both of them extend out of the communication holes, so that the upper end is connected to the circuit board 4 and the lower end is in contact with the in-situ chip 2 .

In order to prevent the probe 9 from slipping and to limit the probe 9 more accurately, the communication hole is preferably a special-shaped hole or a stepped hole, etc., including the main body part in the middle and the constricted parts at both ends, and the probe 9-2 passes through the constriction at the lower end of the communication hole. The neck is thus in contact with the electrode 2 - 1 of the in-situ chip 2 . A spring can also be added between the shoulder of the needle cylinder 9-1 of the probe 9 (the connection between the thinner connection part at the upper end and the middle part) and the upper port of the communication hole (preferably the connection between the constricted part at the upper end and the main body part) , the probe 9 can be further pressed down elastically to ensure a longer self-adaptive close contact. In order to ensure the sealing structure, the diameter of the probe 9-2 of the probe 9 should be smaller than the diameter of the constricted portion at the lower end of the communication hole, and the diameter of the constricted portion at the lower end of the communication hole should be smaller than the width of the electrode 2-1 of the in-situ chip 2, so as to ensure that the probe 9-2 When in contact with the electrode 2-1, the lower plane of the lower sealing plate 8 is firmly attached to the electrode surface (ie the upper surface) of the in-situ chip 2, leaving no gap, so as to achieve a good sealing effect. In actual use, the most preferred solution is that the width of the electrode 2-1 of the in-situ chip 2 is usually 0.5mm, the diameter of the contact of the probe 9-1 is 0.17mm, the material is BeCu, the surface is Au, and the maximum test current is not less than 1.7A , its own resistance is less than 50mΩ, and the compressible distance of the contact probe 9-2 is not less than 1mm.

In order to accurately limit the compression spring 10, the probe guide plate 11 has a through hole 11-1, and the compression spring 10 is limited in the through hole 11-1. As in the above structure, in order to facilitate assembly, the said The circuit board 4 , the upper sealing plate 12 and the probe guide plate 11 are positioned and connected, the lower sealing plate 8 is hoisted under the probe guide plate 11 , and the compression spring 10 is limitedly installed in the through hole 11 - 1 of the probe guide plate 11 . When the compression spring 10 is compressed or extended, the lower sealing plate 8 moves up and down. It is equipped with conventional installation screws, positioning pins and other accessories to ensure accurate installation and positioning. When the circuit board 4 is pressed down, as shown in FIG. 4 , the probe 9-2 of the probe 9 first contacts the electrode 2-1 of the in-situ chip 2, and continues to press down, the probe 9-2 shrinks, and then the sealing plate 8 is lowered. The lower plane of the lower sealing plate 8 is in contact with the upper surface of the in-situ chip 2, and continues to be pressed downward, and the upper plane of the lower sealing plate 8 is in contact with the lower plane of the probe guide plate 11. Under the action of the pressing force of the compression spring 10, the lower plane of the sealing plate 8 will be firmly attached to the surface of the in-situ chip 2, and the probe 9-2 of the probe 9 is also closely connected with the electrode 2-1 of the in-situ chip 2. fit, as shown in Figure 5. This structure makes it possible to form a self-sealing structure between the lower sealing plate 8 and the in-situ chip 2 and between the probe 9 and the electrode 2-1 with the help of the tension of the compression spring 10 during the assembly process of the equipment, ensuring that the probe 9 and the chip electrode are The sealed connection of 2-1 is not in contact with the gas in the chip accommodating cavity 1-1, which avoids easy ionization of gas in the atmosphere environment and avoids tip discharge, thus ensuring the accuracy of the test. The sealing performance is affected by the specification and pressing length of the compression spring 10, and the contact force between the probe 9 and the electrode 2-1 is affected by the probe spring 9-3, which can be selected and adjusted according to the specific requirements of the experiment.

The chip mounting table assembly 1 is provided with a chip accommodating cavity 1-1, the chip accommodating cavity 1-1 is provided with an air inlet 1-4 and an air outlet 1-5, and the chip mounting table assembly 1 is also provided with an air source interface 1- 2. Air outlet pipeline interface 1-3. The air source interface 1-2 is connected with the air source by means of pipes, flange connections, etc. The air inlet 1-4 is communicated with the air source interface 1-2 to form an air intake channel; the air outlet 1-5 is connected with the air outlet pipeline interface 1- 3 are connected, and the air outlet pipeline interfaces 1-3 are connected with the vacuum pump by means of pipes, flange connections, etc., to form an air outlet channel, that is, a vacuum pumping channel. Conventionally, a pressure sensor connected to the computer is provided at the air inlet 1-4 in or near the air inlet 1-4 in the chip accommodating chamber 1-1 to detect the pressure in the chip accommodating chamber 1-1. . The air system formed by the air inlet channel and the air outlet channel provides a gas environment for the in-situ experiment. In order to ensure the airtightness of the environment, a sealing ring is usually provided on the chip mounting table assembly 1 . Pressure gauges, flow meters and valves are conventionally installed on the intake passage and the exhaust passage. The gas source is carbon monoxide, acetylene, methane, oxygen, carbon dioxide, hydrogen, nitrogen or air.

The in-situ chip 2 can be designed with an existing eight-electrode thermoelectric chip in the market, and the structure is shown in FIG. 6 , on which a sample carrying film, electrodes 2-1 and matching heating components and electrical test circuits are arranged; The film is used to carry the sample, the thickness is generally between 100-200nm, preferably 120nm thick, and the material is preferably carbon film or SiN film, which can make electrons easily penetrate and image, without the need for high process requirements. chip cost. There are 8 electrodes 2-1, 4 of which are metal heating wire electrodes, and the other 4 are electrical test electrodes. The integrated circuit test bench 3 designed according to the chip is equipped with 8 probes 9, which are respectively connected with the electrode 2-1. Contact, the width of the electrode 2-1 is not less than 0.4mm. The heating component is a metal wire or a SiC film; the electrical test circuit is a four-electrode IV test circuit, which can meet all electrical tests with higher precision. The in-situ chip 2 can also be customized for domestic chips according to the experimental needs. This test system has lower process requirements for the in-situ chip 2, and the cost of the in-situ chip of the electron microscope used at present is greatly reduced. The sample is positioned on the sample carrier film, and the sample carrier film corresponds to the position of the observation window 4-1 of the circuit board 4, which is convenient for observing the sample.

The circuit board 4 of the integrated circuit test stand 3 is provided with an electrical interface 4-2 connected to the electrical workstation and an observation window 4-1 corresponding to the sample carrier film of the in-situ chip 2. Both Figures 1 and 3 show that the electrical workstation provides power, voltage, etc. for the electrode 2-1 through the electrical interface 4-2. By adjusting the electrical workstation, the temperature control of the in-situ chip 2 and the measurement of electrical parameters, etc. can be realized. In the example, the electrical workstation adopts an American Keithley watch, the electrical interface 4-2 is correspondingly matched with the Keithley watch, and the electrical interface 4-2 can be directly connected with the Keithley watch; the observation window 4-1 is made of quartz glass or acrylic material.

When the test system is used, powder samples can be directly dispersed in solution, and rod-shaped strip samples can be processed by focused ion beam processing, and positioned on the sample carrier film of the in-situ chip 2, and then the in-situ chip 2 can be installed on the Chip mount assembly 1. Then assemble the integrated circuit test bench 3. The assembly method can be as follows: first assemble the probe seal assembly 5, install the compression spring 10 into the through hole 11-1 of the probe guide plate 11, and install the positioning pin with the screw and the probe seal seat. 13 Connect the probe guide plate 11 and the probe upper sealing plate 12. Then install the probe 9 and the lower sealing plate 8, and then put the assembled probe sealing assembly 5 into the installation groove of the base 6, fix it with the matching screws, then put the sealing rubber ring 7, and then install the circuit board 4 , Install and fix with corresponding positioning pins and screws to complete the assembly of the integrated circuit test bench 3 . Then, the integrated circuit test table 3 and the chip mounting table assembly 1 on which the in-situ chip 2 is installed are assembled and placed under an optical microscope.

Connect the air source interface 1-2 and the air outlet pipeline interface 1-3 on the installation platform assembly 1 to the air source and vacuum pump respectively, and cooperate with the pressure gauge, flow meter and valve to form an air circuit system. The electrical interface 4-2 on the circuit board 4 is connected with the electrical workstation, and the electrical workstation is connected with the computer. During the test, the vacuum pump is usually used first to evacuate the gas in the chip containing chamber 1-1 (that is, the experimental chamber). The pressure and vacuum degree of the chip containing chamber 1-1 are detected by the corresponding pressure sensors. Connect and transmit the pressure information in the chip accommodating chamber 1-1 to the computer. The pressure sensor is usually installed at the air inlet 1-4 in the chip accommodating chamber 1-1 or near the air inlet 1-4; The gas source is filled with the experimental gas, and the control of the gas circuit system is formed by adjusting the flow meter on the intake pipe and cooperating with the pressure gauge. When testing the thermal or electrical properties of the material, the manufacturer provides a comparison table of the temperature and current of the in-situ chip 2 corresponding to the in-situ chip 2 used to carry the sample. By adjusting the input current of the electrical workstation, the temperature of the in-situ chip 2 can be controlled. Perform in-situ electric field test and thermal field test.

This system builds an in-situ atmosphere heating and electrical testing material performance system based on an optical microscope. The entire test device has a simple structure and is easy to use. On the other hand, the number of in-situ chips 2 used is reduced, and the sealing performance is good. The probes 9 and the electrodes 2-1 of the in-situ chips 2 are sealed and connected, and the lower sealing plate 8 and the electrodes 2-1 are further connected. The sealing of the surface ensures that the probe 9 does not come into contact with the gas in the chip accommodating cavity 1-1, avoids easy ionization of the gas in the atmospheric environment, and ensures the accuracy of the test; more generally, under the optical microscope The thermoelectric two-field in-situ atmosphere test system is easy to operate, and operators can get started without strict training; the experiment risk is low, and the optical microscope and other accessories will not be damaged. Using this system, the electrical properties of semiconductor thin film devices, nanorods, nanotubes and other materials can be measured in an in-situ environment, and the qualitative and quantitative analysis of various types of experiments such as in-situ gas heating, vacuum heating and electrical experiments are completed. The in-situ transmission electrical test or in-situ scanning electrical test can provide the basis for the design of the experimental scheme. Characterize the morphological characteristics of the material under the condition of in situ gas heating or in situ vacuum heating under the optical microscope, and determine its heating parameters and gas parameters according to the changes of its morphological characteristics, so as to provide the basis for the subsequent formulation of a reasonable in situ transmission electron microscope experimental plan. Based on the gas and heating parameters of the bit experiment. Under the optical microscope, the test sample is not affected by the electron beam and can also be used as a design scheme in the control experiment of the in situ TEM experiment (the in situ TEM experiment itself will be affected by the electron beam). Therefore, this system is of great significance for predicting experimental results, setting reasonable in-situ parameters, formulating mature experimental plans, shortening in-situ transmission experiment cycles, reducing experimental economic costs, and avoiding experimental risks.

Claims (10)

1. thermoelectricity two atmosphere test macros in situ under a kind of optical microscopy, including optical microscopy, electricity work station and electricity It learns the sample stage of work station connection and provides the air-channel system of atmosphere ring mirror for sample stage chamber, which is characterized in that the sample Include in platform integrated circuit testing platform (3) and be arranged thereunder, the chip erecting bed component (1) of chip in situ (2) is installed, Include in integrated circuit testing platform (3) pedestal (6), the probe seal assembly (5) that is mounted on pedestal (6) and circuit board (4) and The probe (9) in probe seal assembly (5), with spring probe (9-2) is limited, when circuit board (4) pushes, is popped one's head in (9-2) Self sealing structure is formed between the electrode (2-1) of chip in situ (2).

2. original position atmosphere test macro according to claim 1, which is characterized in that include needle in probe (9) structure The probe (9-2) of cylinder (9-1) and elastic connection on syringe (9-1), probe (9-2) stretch out probe seal assembly (5) lower end surface It is contacted with the electrode (2-1) of chip in situ (2).

3. original position atmosphere test macro according to claim 1 or 2, which is characterized in that probe seal assembly (5) knot It from top to bottom successively include upper sealing panel (12), probe guide plate (11) and lower sealing plate (8), the probe guide plate in structure (11) limiting between lower sealing plate (8) has pressure spring (10), when circuit board (4) pushes, forms lower sealing plate by pressure spring (10) (8) self sealing structure between chip (2) in situ, between probe (9) and electrode (2-1).

4. original position atmosphere test macro according to claim 3, which is characterized in that the probe (9) is limited in upper sealing panel (12), in the intercommunicating pore that probe guide plate (11) and lower sealing plate (8) are formed, pressure spring (10) is limited in probe guide plate (11) and opens If through-hole (11-1) in, probe (9) upper end is fixedly connected with circuit board (4), circuit board (4) push when by pressure spring (10) shape At the self sealing structure between lower sealing plate (8) and chip (2) in situ, between probe (9) and electrode (2-1).

5. original position atmosphere test macro according to claim 4, which is characterized in that the intercommunicating pore includes the main body at middle part The necking part in portion and both ends.

6. original position atmosphere test macro according to claim 3, which is characterized in that the circuit board (4), upper sealing panel (12) it is located by connecting with probe guide plate (11), the lower sealing plate (8) is lifted below probe guide plate (11) and in pressure spring (10) have when compressing and stretch out and move up and down freedom degree.

7. original position atmosphere test macro according to claim 1, which is characterized in that include being opened in the air-channel system The air inlet (1-4) and gas outlet (1-5) in chip accommodating chamber (1-1) on chip erecting bed component (1), the air inlet (1-4), gas outlet (1-5) are connected to gas source, vacuum pump respectively, to form inlet channel, outlet passageway.

8. original position atmosphere test macro according to claim 7, which is characterized in that further include difference in the air-channel system Inlet channel, the pressure gauge on outlet passageway, flowmeter and valve are set；The gas source be carbon monoxide, acetylene, methane, Oxygen, carbon dioxide, hydrogen, nitrogen or air.

9. original position atmosphere test macro according to claim 1 or 2, which is characterized in that the original position chip (2) is equipped with Sample carrier film, electrode (2-1) and matched heating component and electrical testing circuit sample carrier film；The sample carrier film is Carbon film or SiN film；The heating component is wire or SiC film；The electrical testing circuit is that four electrode IV test circuit； The width of the electrode is not less than 0.4mm.

10. original position atmosphere test macro according to claim 1, which is characterized in that the integrated circuit testing platform (3) Circuit board (4) is equipped with the matched electric interfaces of electricity work station (4-2) and holds with chip in situ (2) sample carrying membrane sample The corresponding observation window of film carrier (4-1), the observation window (4-1) are quartz glass or acrylic material.