CN110040681A - A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost - Google Patents
A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost Download PDFInfo
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- CN110040681A CN110040681A CN201910162351.5A CN201910162351A CN110040681A CN 110040681 A CN110040681 A CN 110040681A CN 201910162351 A CN201910162351 A CN 201910162351A CN 110040681 A CN110040681 A CN 110040681A
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- mems
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- silicon chip
- photoetching
- lower electrode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 230000009977 dual effect Effects 0.000 claims abstract description 5
- 238000001459 lithography Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The present invention relates to ultrasonic transducer technical fields, and in particular to a kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost, comprising the following steps: 1) prepares suitable ordinary silicon chip；2) lower electrode is deposited；3) piezoelectric material film is grown；4) top electrode is deposited；5) photoetching and the lower electrode pattern of etching；6) PECVD deposit passivation layer；7) photoetching and Etch Passivation expose contact conductor PAD；8) dual surface lithography Silicon Wafer；9) wet etching ordinary silicon chip discharges cavity structure, forms MEMS piezoelectric ultrasonic transducer structure, and production cost is greatly lowered, and improves the consistency of wafer processing.
Description
Technical field
The present invention relates to ultrasonic transducer technical fields, and in particular to a kind of high consistency MEMS PZT (piezoelectric transducer) of low cost
Production method.
Background technique
Ultrasonic wave has good directionality, and penetration capacity is strong, is easily obtained the sound energy relatively concentrated, and propagation distance is remote etc. in water
Feature.It can be used for ranging, test the speed, clean, welding, rubble etc..In medicine, military affairs, industry, agriculturally there are many applications.?
In ultrasonic system, realize that the device of acoustic-electric conversion is energy converter (Ultrasonic Transducer, UT), performance quality
It is related to system performance, is the critical device in system.
The micromation of ultrasonic transducer is in ultrasonic medical imaging and ultrasound detection, it is desirable that ultrasonic system can be with smaller
Device obtains higher frequency.Under the influence of this demand, ultrasonic system starts to micromation, integrated, high frequency hair
Exhibition.Miniature ultrasonic device is prepared using MEMS technology to be gradually concerned by people.It is changed compared to traditional Piezoelectric
Energy device, MEMS silicon micro-ultrasonic transducer (Micromachined Ultrasonic Transducer, MUT) mainly has following excellent
Gesture: 1. can get frequency more higher than traditional devices, and in ultrasonic image-forming system, frequency is closely related with resolution ratio, and high frequency can
To generate the image of higher resolution, thus PMUT is easier to be imaged than traditional ceramic transducer, and 2. compared to traditional
Processing method, MEMS technology precision is high, and for traditional PZT (piezoelectric transducer) by the way of cutting, precision is lower, utilizes MEMS skill
The size of art, device can be controlled in micron dimension, is conducive to the consistency of retainer member, 3. MUT prepared using MEMS technology
Be easier to array, unit consistency is preferable thus with the obvious advantage in ultrasonic phase array and ultrasonic imaging, 4.MUT with it is subsequent
IC technique has better compatibility.
The production method of usual MEMS piezoelectric ultrasonic transducer is as shown in Figure 1, need to carry out following processing step: 1. prepare
Suitable SOI wafer；2. depositing lower electrode；3. photoetching simultaneously etches lower electrode pattern；4. growing piezoelectric material film；5. photoetching is simultaneously
Etch piezoelectric membrane figure；6. depositing top electrode；7. photoetching simultaneously etches top electrode figure；8. one layer of very thin passivation layer is deposited,
Protect piezoelectric device surface；9. photoetching and Etch Passivation expose contact conductor PAD；10. dual surface lithography Silicon Wafer；11. the back side
Deep etching silicon materials discharge cavity structure, form MEMS piezoelectric ultrasonic transducer structure.This MEMS piezoelectric ultrasonic transducer system
Make technique, need to use SOI wafer, passivation layer deposition and deep silicon etching, the cost of these processing technologys is very high.For example, one
The price of piece SOI wafer is 10~20 times of ordinary silicon chip price；Valuableness of the passivation layer deposition because of its equipment, processing cost
It can be higher；For deep silicon etching due to being prolonged monolithic etching technics, processing cost can account for the 1/3~1/4 of positive wafer.
In this way, would generally become very expensive by the MEMS piezoelectric ultrasonic transducer that these high cost process fabricate, it is difficult to quilt
Market is received.
Summary of the invention
The technical problem to be solved by the present invention is in view of the foregoing drawbacks, provide a kind of high consistency MEMS piezoelectricity of low cost
Production cost is greatly lowered in the production method of energy converter, improves the consistency of wafer processing.
The technical solution adopted by the present invention to solve the technical problems is as follows:
A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost, comprising the following steps:
1) prepare suitable ordinary silicon chip；
2) electrode under the deposition of the upper surface of ordinary silicon chip；
3) piezoelectric material film is grown in lower electrode surface；
4) top electrode is deposited on piezoelectric material film surface；
5) photoetching and the lower electrode pattern of etching；
6) PECVD deposit passivation layer is used, protection piezoelectric device surface is used as elastic layer modulation device frequency simultaneously；
7) photoetching and Etch Passivation expose contact conductor PAD；
8) dual surface lithography Silicon Wafer；
9) wet etching ordinary silicon chip discharges cavity structure, forms MEMS piezoelectric ultrasonic transducer structure.
The beneficial effects of the present invention are: using the above scheme, using ordinary silicon chip, greatly reducing production cost, adopting
It uses traditional PECVD passivation layer as surface protection and elasticity modulation, both played a protective role, but also as elastic layer modulator
Part frequency discharges MEMS ultrasonic transducer structures, maximum limit using wet etch techniques can produce in batches, least cost
Degree reduces processing cost, moreover, wet etching can guarantee that the rate of full wafer wafer silicon corrosion is identical, greatly improves wafer
The consistency of processing.
Detailed description of the invention
Through the following detailed description taken in conjunction with the accompanying drawings, present invention objects, features and advantages above-mentioned and other will become
Obviously.
Fig. 1 is present invention hair process flow chart.
Wherein: 1 is ordinary silicon chip, and 2 be lower electrode deposition layer, and 3 be conductive film sedimentary, and 4 be top electrode sedimentary, and 5 are
Passivation layer.
Specific embodiment
The present invention will be further described with reference to the accompanying drawing.
Referring to Fig.1, the production method of the high consistency MEMS PZT (piezoelectric transducer) of a kind of low cost, comprising the following steps:
1) prepare suitable ordinary silicon chip 1；
2) electrode under the deposition of the upper surface of ordinary silicon chip 1, forms lower electrode deposition layer 2 in ordinary silicon surface；
3) piezoelectric material film is grown on the surface of lower electrode deposition layer 2, forms piezoelectric film deposition layer 3；
4) top electrode is deposited on the surface of piezoelectric film deposition layer 3, forms top electrode sedimentary 4；
5) lower electrode etch is carried out using photoetching process, etches lower electrode pattern；
6) PECVD deposit passivation layer 5 at upper electrode surface, the lower electrode pattern etched is used, as piezoelectricity device
Part sealer, while as elastic layer modulation device frequency, using traditional PECVD passivation layer as surface protection and bullet
Property modulation, reduce production difficulty,
7) photoetching process is used, passivation layer is performed etching, exposes contact conductor PAD；
8) dual surface lithography Silicon Wafer；
9) wet corrosion technique is used, ordinary silicon chip is corroded, the cavity structure of ordinary silicon chip out is corroded, is formed
MEMS piezoelectric ultrasonic transducer structure.
This processing method does not greatly reduce production cost using ordinary silicon chip using expensive SOI wafer, adopts
It uses traditional PECVD passivation layer as surface protection and elasticity modulation, both played a protective role, but also as elastic layer modulator
Part frequency, also, MEMS ultrasonic transducer structures are discharged using wet etch techniques can produce in batches, least cost,
Processing cost is reduced to greatest extent, in addition, the method by wet etching makes MEMS structure, leads to full wafer in deep silicon etching
Wafer each position silicon etch rate is unevenly compared, and wet etching can guarantee that the rate of full wafer wafer silicon corrosion is identical, in crystalline substance
It is also improved in the consistency of circle processing.
The above is only presently preferred embodiments of the present invention, not does limitation in any form to the present invention, it is all according to
According to any simple modification to the above embodiments in technical spirit of the invention, equivalent variations, guarantor of the invention is each fallen within
Within the scope of shield.
Claims (1)
1. a kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost, which comprises the following steps:
1) prepare suitable ordinary silicon chip；
2) electrode under the deposition of the upper surface of ordinary silicon chip；
3) piezoelectric material film is grown in lower electrode surface；
4) top electrode is deposited on piezoelectric material film surface；
5) photoetching and the lower electrode pattern of etching；
6) PECVD deposit passivation layer is used, protection piezoelectric device surface is used as elastic layer modulation device frequency simultaneously；
7) photoetching and Etch Passivation expose contact conductor PAD；
8) dual surface lithography Silicon Wafer；
9) wet etching ordinary silicon chip discharges cavity structure, forms MEMS piezoelectric ultrasonic transducer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910162351.5A CN110040681A (en) | 2019-03-05 | 2019-03-05 | A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910162351.5A CN110040681A (en) | 2019-03-05 | 2019-03-05 | A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost |
Publications (1)
| Publication Number | Publication Date |
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| CN110040681A true CN110040681A (en) | 2019-07-23 |
Family
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| CN201910162351.5A Pending CN110040681A (en) | 2019-03-05 | 2019-03-05 | A kind of production method of the high consistency MEMS PZT (piezoelectric transducer) of low cost |
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| CN (1) | CN110040681A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110337056A (en) * | 2019-08-06 | 2019-10-15 | 常州元晶电子科技有限公司 | A kind of production method of high density directive property piezo-electric electro-acoustic transducer array |
| CN112137589A (en) * | 2020-09-29 | 2020-12-29 | 北京理工大学 | Micro photoacoustic imaging probe and preparation method thereof |
| WO2021134692A1 (en) * | 2019-12-31 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Transducer and manufacturing method therefor |
| CN114209275A (en) * | 2021-12-10 | 2022-03-22 | 北京理工大学 | An OCT Compatible Photoacoustic Sensor |
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| CN101754077A (en) * | 2008-12-19 | 2010-06-23 | 三星电子株式会社 | Piezoelectric acoustic transducer and method for fabricating the same |
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2019
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Cited By (5)
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|---|---|---|---|---|
| CN110337056A (en) * | 2019-08-06 | 2019-10-15 | 常州元晶电子科技有限公司 | A kind of production method of high density directive property piezo-electric electro-acoustic transducer array |
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| CN114209275A (en) * | 2021-12-10 | 2022-03-22 | 北京理工大学 | An OCT Compatible Photoacoustic Sensor |
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