CN110034216A - III-V nitride deep-UV light-emitting diode structure and preparation method thereof - Google Patents

Abstract

The invention discloses a kind of group III-nitride deep-UV light-emitting diode structures and preparation method thereof.Wherein, the production method includes: the step of growth forms the epitaxial structure of deep-UV light-emitting diode on substrate, the epitaxial structure includes successively n-contact layer formed on a substrate, active area, electronic barrier layer and P type contact layer, and the step of making the n-type electrode being electrically connected respectively with n-contact layer, P type contact layer, p-type electrode；And further include the steps that the micro-nano structure for taking light to enhance described in processing formation on the light-emitting surface for being located at the side the light emitting diode construction n, the light-emitting surface isNitrogen face.III-V nitride deep-UV light-emitting diode structure provided by the invention has many advantages, such as that efficiency of light extraction is high, thermal resistance is low, junction temperature is low and stability is good; device performance and the service life of deep-UV light-emitting diode can substantially be enhanced; and its manufacture craft is simple and fast, is easy to scale implementation.

Description

III-V nitride deep ultraviolet light emitting diode structure and fabrication method thereof

technical field

The invention relates to a light emitting diode, in particular to a structure of a III-V group nitride deep ultraviolet light emitting diode and a manufacturing method thereof, belonging to the technical field of semiconductor optoelectronics.

Background technique

III-V nitride semiconductors are called third-generation semiconductor materials, and have the advantages of large band gap, good chemical stability, and strong radiation resistance; their band gaps cover from deep ultraviolet, the entire visible light, to near-infrared It can be used to make semiconductor light-emitting devices, such as light-emitting diodes, lasers and superluminescent light-emitting diodes. The deep ultraviolet light emitting diode based on III-V nitride semiconductor has the advantages of energy saving and environmental protection, simple fabrication, small size, light weight, long life, etc. Broad market application prospects. However, the current output power of deep ultraviolet light-emitting diodes is very low, only in the order of mW, which is two orders of magnitude smaller than that of blue light-emitting diodes. The external quantum efficiency of the current deep ultraviolet light emitting diode is very low, generally less than 10%. The main bottleneck is that the light extraction efficiency of the deep ultraviolet light emitting diode is very low, only about 10%, which is much smaller than the external quantum efficiency of the blue light emitting diode. Efficiency (>80%). The main reasons for the low light extraction efficiency of deep ultraviolet light-emitting diodes are as follows:

On the one hand, since the sapphire substrate basically does not absorb deep ultraviolet light, and the sapphire substrate is very cheap, the existing deep ultraviolet light-emitting diodes are similar to most blue light-emitting diodes, mainly grown on the sapphire substrate, such as CN103137822B, As shown in CN103943737B and CN105977353A. However, unlike blue light-emitting diodes that use a GaN buffer layer, deep ultraviolet light-emitting diodes usually use AlN as a buffer layer. Since the forbidden band width of AlN (6.2eV) is much larger than that of GaN (3.4eV), it is currently used for sapphire linings. The laser output (4.5eV) of the bottom GaN-based blue light-emitting diode stripping laser can only be absorbed by the GaN buffer layer, but cannot be efficiently absorbed by the AlN buffer layer, so it cannot be used for the stripping of AlN-based deep ultraviolet light-emitting diodes on sapphire substrates. Moreover, the AlN epitaxial material is relatively brittle and is easily broken when subjected to impact, so it is difficult to prepare a thin-film light-emitting diode structure similar to that of a GaN-based blue light-emitting diode on a sapphire substrate. In addition, due to the weak mobility of Al atoms, it is difficult to grow high-quality AlN materials with a flat surface on a patterned sapphire substrate (PSS). Light-emitting diode structure, the grown epitaxial layer is also a planar structure, when the light is emitted from the sapphire substrate or the nitride epitaxial layer, the total reflection angle is very small, and total reflection is prone to occur, resulting in most of the light being reflected during multiple internal reflections. The internal material absorbs, so the light extraction efficiency of the deep ultraviolet light emitting diode is very low, and the output power is very small.

On the other hand, for group III-V nitride semiconductors, the light emitted by InN, GaN materials and their alloy InGaN materials is in the TE polarization mode, and the light can be emitted from the surface of the light emitting diode. For AlN and AlGaN materials with high Al composition, due to the change of the valence band structure, the light emitted is mainly in the TM polarization mode, and most of the light cannot be emitted from the surface of the LED, but only from the side of the LED. For deep ultraviolet light-emitting diodes, the active region is usually made of AlGaN or AlInGaN materials. As the wavelength of the light-emitting diode moves to the short-wave direction, the Al composition in the active region increases, the proportion of TM-polarized light in the light-emitting diode increases, and the TE-polarized light increases. The proportion of light that can be emitted from the epitaxial wafer surface is reduced, resulting in a decrease in the proportion of light that can be emitted from the surface of the epitaxial wafer. For traditional deep ultraviolet light emitting diodes, the surface area is large (300μm × 300μm order), and the sidewall area is small (300μm × 2μm order). Therefore, the light extraction efficiency of the deep ultraviolet light emitting diode is very low, and the output power is very small.

In addition, for III-V nitride semiconductors, dicocene (CP ₂ Mg) is usually used as the p-type dopant, due to the higher ionization energy of Mg acceptors in nitrides (GaN: 170meV, AlN: 470meV) , typically less than 10% of the Mg acceptors are ionized, so the hole concentration is low in p-type nitride semiconductors. At the same time, due to the high Mg acceptor doping concentration in the p-type layer and the large effective mass of holes, the mobility of holes in the p-type layer is low, resulting in a large resistance of the p-type layer, which is much larger than that of the n-type layer. Therefore, the heat source of the deep ultraviolet light emitting diode is mainly the p-type layer. The traditional nitride deep ultraviolet light emitting diodes are all packaged in a positive way. As shown in CN 105047775A and CN106025007A, the heat generated in the p-type layer needs to pass through the multiple quantum well active region, the n-type layer and the substrate with a thickness of about 100 μm. In the heat sink, the heat flow path of the light emitting diode is very long, and the thermal resistance of the deep ultraviolet light emitting diode is large due to the low thermal conductivity of the sapphire substrate. The thermal power of the deep ultraviolet light emitting diode is relatively large, so the junction temperature of the active region of the device is relatively high, which seriously affects the performance and life of the device. At present, although some chip packages also adopt the flip-chip structure, the chips still use the traditional same-side electrode structure. This packaging method requires pre-depositing patterned solder on the heat sink, and it is necessary to ensure that the N-side electrode solder and the P-side electrode during the soldering process. Solder isolation, and it is necessary to ensure the electrical connection between the N-side electrode and the P-side electrode, etc. This packaging method is very prone to leakage, which will cause device failure, etc., and the heat dissipation of the LED needs to pass through a small area of solder. It is still better to use The flip-chip structure chip is in contact with the whole surface, so the thermal resistance of the deep ultraviolet light emitting diode is relatively large. In addition, since the light exits from the sapphire surface, the exit interface is very far from the active region, resulting in low light extraction efficiency and low output power of the deep ultraviolet light emitting diode.

In addition, compared with GaAs or InP-based materials, (0001) gallium-face III-V nitride semiconductor materials have good chemical stability, acid and alkali resistance, and are not easy to corrode. The n-type mesa of the UV light emitting diode is shown in CN105047775A and CN106025007A. Dry etching usually introduces surface states, damage and defects, which will not only become non-radiative recombination centers and affect the efficiency of deep ultraviolet light-emitting diodes, but also become leakage channels, affecting the reliability and stability of the device. sex.

SUMMARY OF THE INVENTION

The main purpose of the present invention is to provide a III-V nitride deep ultraviolet light emitting diode structure and a fabrication method thereof to overcome the deficiencies of the prior art.

In order to realize the foregoing invention purpose, the technical scheme adopted in the present invention includes:

The embodiment of the present invention provides a III-V nitride deep ultraviolet light emitting diode structure, including an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer arranged in sequence, the n-type contact layer, p-type contact layer The type contact layer is electrically connected to the n-type electrode and the p-type electrode respectively.

connected, wherein the light-emitting surface on the n-side of the light-emitting diode structure is nitrogen side, and the A micro-nano structure with enhanced light extraction is formed on the nitrogen surface.

Further, the side surface of the n-type contact layer opposite to the active region is the Nitrogen side.

Further, the light extraction-enhanced micro-nano structure includes any one of a zigzag-shaped micro-structure, a triangular micro-structure, a nano-pillar micro-structure, a trapezoidal micro-structure, an inverted trapezoidal micro-structure, a yurt-shaped micro-structure, and a micro-nano porous microstructure. One or a combination of two or more, etc., but not limited to this.

Further, the n-type contact layer and the p-type contact layer respectively form ohmic contact with the n-type electrode and the p-type electrode.

Further, the p-type electrode includes a p-type contact electrode or a transparent conductive film, and the p-type electrode forms an ohmic contact with the p-type contact layer.

Furthermore, the entire surface of the p-type contact electrode is deposited on the p-type contact layer.

Furthermore, the transparent conductive film is also covered with a high-reflection film.

Further, the p-side of the light-emitting diode structure is bonded to the support sheet.

Further, a through-hole structure is formed in the light-emitting diode structure, the through-hole structure extends from the p-side of the light-emitting diode structure to the n-type contact layer, and the n-type electrode is disposed in the through-hole structure and is connected to the n-type contact layer. The type contact layer forms an ohmic contact.

Embodiments of the present invention also provide a method for fabricating a III-V nitride deep ultraviolet light-emitting diode structure, including:

a step of growing on a substrate an epitaxial structure for forming a light emitting diode, the epitaxial structure including an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer sequentially formed on the substrate, and

the steps of making the n-type electrode and the p-type electrode electrically connected to the n-type contact layer and the p-type contact layer, respectively;

It is characterized in that it also includes:

The step of forming the light-extraction-enhanced micro-nano structure on the light-exiting surface on the n-side of the light-emitting diode structure, the light-exiting surface is: Nitrogen side.

Further, the substrate is selected from Si substrate or SiC substrate.

Further, the p-type electrode includes a p-type contact electrode or a transparent conductive film, and the p-type electrode forms an ohmic contact with the p-type contact layer.

Furthermore, the entire surface of the p-type contact electrode is deposited on the p-type contact layer, and the p-type contact electrode adopts a metal electrode with high reflectivity.

Furthermore, the transparent conductive film is also covered with a high-reflection film.

Further, the light-enhancing micro-nano structure includes any one of zigzag microstructure, triangular microstructure, nano-pillar microstructure, trapezoidal microstructure, inverted trapezoidal microstructure, yurt-shaped microstructure, and micro-nano porous microstructure. or a combination of two or more.

Further, the manufacturing method also includes:

at least forming a through-hole structure in the epitaxial structure, the through-hole structure extending from the p-side of the light-emitting diode structure to the n-type contact layer,

And, an n-type electrode is formed in the through-hole structure, and the n-type electrode and the n-type contact layer form an ohmic contact.

Further, the manufacturing method further includes: bonding the p-side of the light emitting diode structure to the support sheet.

Compared with the prior art, the III-V nitride deep ultraviolet light emitting diode structure provided by the present invention has the advantages of high light extraction efficiency, low thermal resistance, low junction temperature and good stability, and can greatly enhance the device of the deep ultraviolet light emitting diode. performance and life, and its production process is simple and fast, and it is easy to implement on a large scale.

Description of drawings

FIG. 1 is a schematic structural diagram of a nitride semiconductor deep ultraviolet light emitting diode in Embodiment 1 of the present invention.

FIG. 2 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after the p-type ohmic contact is formed in the first embodiment of the present invention.

FIG. 3 is a schematic diagram showing the structure of a deep ultraviolet light emitting diode after an n-type ohmic contact hole is etched on the p-type ohmic contact side according to the first embodiment of the present invention.

FIG. 4 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after exposing the n-type contact layer inside the hole according to the first embodiment of the present invention.

FIG. 5 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after the n-type ohmic contact is fabricated according to the first embodiment of the present invention.

FIG. 6 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after removing the Si substrate or the SiC substrate and the buffer layer according to the first embodiment of the present invention.

Figures 7a-7h show the first embodiment of the present invention in Schematic diagram of the structure of the deep ultraviolet light emitting diode after preparing various light extraction-enhanced micro-nano structures on the nitrogen-faced n-type ohmic contact layer.

FIG. 8 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after etching or etching to the p-type ohmic contact electrode in the first embodiment of the present invention.

FIG. 9 is a schematic diagram showing the structure of a deep ultraviolet light emitting diode after depositing a metal electrode on the back of the support sheet according to the first embodiment of the present invention.

FIG. 10 is a schematic structural diagram of a nitride semiconductor deep ultraviolet light emitting diode in Embodiment 2 of the present invention.

FIG. 11 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after the p-type ohmic contact is formed in the second embodiment of the present invention.

FIG. 12 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after removing the Si substrate or the SiC substrate and the buffer layer according to the second embodiment of the present invention.

Figures 13a-13f respectively show the second embodiment of the present invention in Schematic diagram of the structure of the deep ultraviolet light emitting diode after preparing various light extraction-enhanced micro-nano structures on the nitrogen-faced n-type ohmic contact layer.

FIG. 14 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after the n-type ohmic contact is fabricated according to the second embodiment of the present invention.

FIG. 15 is a schematic diagram showing the structure of the deep ultraviolet light emitting diode after etching or etching to the p-type ohmic contact electrode in the second embodiment of the present invention.

FIG. 16 is a schematic diagram showing the structure of a deep ultraviolet light emitting diode after depositing a metal electrode on the back of the support sheet according to the second embodiment of the present invention.

Reference numeral description: 101 is the substrate, 102 is the n-type contact layer, 103 is the active region, 104 is the electron blocking layer, 105 is the p-type contact layer, 106 is the p-type ohmic contact electrode or transparent conductive film and high reflection The combination of films, 107 is an insulating dielectric film, 108 is an n-type ohmic contact electrode, 109 is a solder, 110 is a support sheet, 111 is a support sheet contact electrode, 201 is a substrate, 202 is an n-type contact layer, and 203 is an active area, 204 is an electron blocking layer, 205 is a p-type contact layer, 206 is a p-type ohmic contact electrode or a combination of a transparent conductive film and a high-reflection film, 207 is a solder, 208 is a support sheet, and 209 is an n-type ohmic contact electrode, 210 is the contact electrode of the support sheet.

Detailed ways

In view of the deficiencies in the prior art, the inventor of the present application was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows. However, it should be understood that within the scope of the present invention, the above-mentioned technical features of the present invention and the technical features specifically described in the following (eg, the embodiments) can be combined with each other to form new or preferred technical solutions. Due to space limitations, it is not repeated here.

An aspect of an embodiment of the present invention provides a III-V nitride deep ultraviolet light emitting diode structure including an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer arranged in sequence, and the n-type contact layer , p-type contact layer and n-type electrode, p-type electrode

The poles are electrically connected, wherein the light-emitting surface on the n-side of the light-emitting diode structure is nitrogen side, and the A micro-nano structure with enhanced light extraction is formed on the nitrogen surface.

Further, the side surface of the n-type contact layer opposite to the active region is the Nitrogen side.

Further, the micro-nano structure enhanced by light extraction includes any of zigzag-shaped micro-structure, triangular micro-structure, nano-pillar micro-structure, trapezoidal micro-structure, inverted trapezoidal micro-structure, yurt-shaped micro-structure, micro-nano porous micro-structure, etc. One or a combination of two or more, but not limited thereto.

Further, the n-type contact layer and the p-type contact layer respectively form ohmic contact with the n-type electrode and the p-type electrode.

Further, the p-type electrode includes a p-type contact electrode or a transparent conductive film, and the p-type electrode forms an ohmic contact with the p-type contact layer.

Furthermore, the entire surface of the p-type contact electrode is deposited on the p-type contact layer, and the p-type contact electrode adopts a metal electrode with high reflectivity.

The material of the metal electrode includes any one or a combination of two or more of Ni, Al, Ag, Pd, Pt, Au, TiN, Rh and other materials, and is not limited thereto.

Furthermore, the transparent conductive film is also covered with a high-reflection film.

Furthermore, the entire surface of the transparent conductive film is covered on the p-type contact layer.

Further, the material of the transparent conductive film includes any one or a combination of two or more materials such as AZO, IGZO, ITO, ZnO, and MgO, and is not limited thereto.

Further, the material of the high-reflection film includes Ag, Al, ZnO, MgO, SiO ₂ , SiN _x , TiO ₂ , ZrO ₂ , AlN, Al ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , HfSiO ₄ , Any one or a combination of two or more of materials such as AlON, etc., are not limited thereto.

Further, the p-side of the light-emitting diode structure is bonded to the support sheet.

Further, the support sheet includes any one or a combination of two or more of silicon substrate, copper support sheet, molybdenum copper support sheet, molybdenum support sheet, ceramic substrate, aluminum nitride, diamond, etc., and is not limited to this.

Still further, it includes metallic bonding or non-metallic bonding. Wherein, the material used for the metal bonding includes any one or a combination of two or more of AuSn, NiSn, AuAu, and NiGe, and is not limited thereto.

Wherein, the non-metallic bonding includes organic bonding and/or oxide bonding, and is not limited thereto.

Further, a through-hole structure is formed in the light-emitting diode structure, the through-hole structure extends from the p-side of the light-emitting diode structure to the n-type contact layer, and the n-type electrode is disposed in the through-hole structure and is connected to the n-type contact layer. The type contact layer forms an ohmic contact.

Furthermore, an insulating medium is distributed between the n-type electrode and the active region, the electron blocking layer, the p-type contact layer and the p-type electrode.

Further, the insulating medium includes any one or a combination of two or more materials such as SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , AlON, SiAlON, TiO ₂ , Ta ₂ O ₅ and ZrO ₂ , and not limited to this.

The III-V nitride deep ultraviolet light emitting diode structure proposed in the foregoing embodiments of the present invention has the characteristics of high light extraction efficiency, which can greatly improve the output power of the deep ultraviolet light emitting diode. Specifically, the present invention flip-chip bonds the epitaxial thin film material of deep ultraviolet light emitting diode based on SiC substrate or large-scale, low-cost Si substrate epitaxial growth on the support sheet, and then the Si substrate or SiC substrate and the buffer layer are bonded together by flip chip. removed, finally in the nitride material The nitrogen surface is used to fabricate a micro-nano structure with enhanced light extraction, thereby improving the extraction efficiency of deep ultraviolet light. The present invention also proposes to fabricate n-type ohmic contact electrodes through a perforated structure (Via structure), avoiding the need for The light absorption and light scattering caused by the formation of the n-type electrode on the nitrogen-faced n-type contact layer can further improve the light extraction efficiency of the deep ultraviolet light emitting diode. In addition, by using Si substrate or SiC substrate to grow deep ultraviolet light emitting diode structure, the stress in deep ultraviolet light emitting diode can be controlled by adjusting the AlN/AlGaN stress control layer; the stress can also be controlled by fabricating a micro-nano structure with enhanced light extraction. By regulating the stress in the deep ultraviolet light emitting diode, the quantum well energy band can be changed, thereby enhancing the proportion of TE mode light in the deep ultraviolet light emitting diode, greatly improving the light extraction efficiency of the device, and improving the output power of the deep ultraviolet light emitting diode.

The structure of the III-V nitride deep ultraviolet light emitting diode proposed in the foregoing embodiments of the present invention has low thermal resistance, which can greatly reduce the junction temperature during operation of the device and improve the performance and reliability of the deep ultraviolet light emitting diode. Further, in the present invention, a deep ultraviolet light emitting diode structure is prepared by using a Si substrate or a SiC substrate, and then the deep ultraviolet light emitting diode is flip-chip bonded to the heat sink through the bonding technology, and the p-type layer with higher resistance is integrated. The surface is directly connected to the heat sink, and the heat generated in the active area and the p-type layer will be directly conducted into the heat sink, without passing through the n-type contact layer and the substrate with low thermal conductivity of about 100 μm thick, so the deep ultraviolet light emission proposed by the present invention Diode thermal resistance is small.

The III-V nitride deep ultraviolet light emitting diode structure proposed in the foregoing embodiments of the present invention has the advantages of less etching damage and good stability, and can greatly improve the reliability of the deep ultraviolet light emitting diode. For example, the present invention will use wet etching to prepare a micro-nano structure with enhanced light extraction and an epitaxial layer for isolating the deep ultraviolet light emitting diode, so as to avoid the influence of dry etching on the device, thereby improving the stability and reliability of the deep ultraviolet light emitting diode. sex.

In conclusion, the III-V nitride deep ultraviolet light emitting diode structure proposed in the present invention has the advantages of high light extraction efficiency, low thermal resistance, low junction temperature and good stability, and can greatly enhance the output power and life of the deep ultraviolet light emitting diode.

Another aspect of the embodiments of the present invention provides a method for fabricating a III-V nitride deep ultraviolet light emitting diode structure, which includes: growing on a substrate to form an epitaxial structure of a light emitting diode, the epitaxial structure comprising sequentially forming an epitaxial structure on the substrate. an n-type contact layer, an active region, an electron blocking layer, and a p-type contact layer formed on the bottom, and

the steps of making the n-type electrode and the p-type electrode electrically connected to the n-type contact layer and the p-type contact layer, respectively;

It is characterized in that it also includes:

The step of forming the light-extraction-enhanced micro-nano structure on the light-exiting surface on the n-side of the light-emitting diode structure, the light-exiting surface is: Nitrogen side.

Further, the substrate is selected from Si substrate or SiC substrate. Different from sapphire substrate, Si substrate and SiC substrate will absorb deep ultraviolet light, if the substrate is not peeled off, it will seriously affect the output power of deep ultraviolet light emitting diode, and the price of SiC substrate is very expensive, so in the existing Such substrates are generally not considered in the fabrication process of the deep ultraviolet light emitting diode structure. However, after long-term research and a large number of experiments, the inventor of the present case unexpectedly found that if a Si substrate or a SiC substrate is used in the manufacturing process of the present invention, on the one hand, a high-quality epitaxial layer can be formed on such a substrate, and the deep ultraviolet The light extraction efficiency and output power of the light-emitting diode, on the other hand, this kind of substrate is also easy to peel off the epitaxial layer, which can be removed by wet etching, so that the thin-film deep-ultraviolet light-emitting diode structure can be realized. Also, as mentioned above, using this type of substrate to grow the deep ultraviolet light emitting diode structure can control the stress in the deep ultraviolet light emitting diode by regulating the AlN/AlGaN stress control layer, and then change the quantum well energy band, thereby enhancing the deep ultraviolet light emitting diode. The proportion of TE mode light in the UV light emitting diode greatly improves the light extraction efficiency of the device and improves the output power of the deep ultraviolet light emitting diode.

Further, the p-type electrode includes a p-type contact electrode or a transparent conductive film, and the p-type electrode forms an ohmic contact with the p-type contact layer.

Further, the entire surface of the p-type contact electrode is deposited on the p-type contact layer. Furthermore, the p-type contact electrode is connected with the heat sink over the entire surface by solder. For the existing sapphire substrate deep ultraviolet light emitting diodes, due to the difficulty of peeling off the sapphire substrate, most chips use flip-chip packaging, but the chips still use the traditional same-side electrode structure. During the welding process, the N-side electrode solder and The P-side electrode solder needs to be isolated, and the electrical connection between the N-side electrode and the P-side electrode needs to be ensured, etc. Therefore, both the P-side electrode and the N-side electrode are only in contact with the solder in a small area. This packaging method is very prone to leakage, causing the device Failure, and more importantly, due to the small contact area, the sapphire DUV LED has a small heat dissipation area and a large thermal resistance. Different from the existing sapphire substrate deep ultraviolet light emitting diode, the deep ultraviolet light emitting diode structure proposed by the present invention adopts the electrode to contact the whole surface of the heat sink, the heat dissipation area is very large, the thermal resistance of the device is very low, the performance of the device can be greatly improved, and the depth of the device can be greatly improved. output power of UV LEDs.

Furthermore, the p-type contact electrode adopts a metal electrode with high reflectivity.

Further, the material of the metal electrode includes any one or a combination of two or more of materials such as Ni, Al, Ag, Pd, Pt, Au, TiN, Rh, etc., and is not limited thereto.

Further, a high-reflection film is also covered on the transparent conductive film.

Further, the entire surface of the transparent conductive film is covered on the p-type contact layer.

Further, the material of the transparent conductive film includes any one or a combination of two or more of AZO, IGZO, ITO, ZnO and MgO, and is not limited thereto.

Further, the material of the high-reflection film includes Ag, Al, ZnO, MgO, SiO ₂ , SiN _x , TiO ₂ , ZrO ₂ , AlN, Al ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , HfSiO ₄ , Any one or a combination of two or more of AlONs, but not limited thereto.

Further, the manufacturing method further comprises: at least adopting any one of dry etching, wet etching, electrochemical etching, or light-assisted electrochemical etching in the The nitrogen surface is processed to form the light-extraction-enhanced micro-nano structure, and the The nitrogen side is the side surface of the n-type contact layer opposite to the active region. In contrast, the existing deep ultraviolet light emitting diodes on sapphire substrates are all flip-chip packaged because the substrate is difficult to peel off. The light is emitted from a sapphire substrate with a thickness of about 100 μm. The sapphire substrate is very hard and difficult to process. Even if dry etching is used Due to the thick sapphire substrate, the roughened pattern is very far from the light-emitting active area, the light scattering effect is poor, and the light extraction efficiency of the deep ultraviolet light emitting diode cannot be effectively improved. Different from the existing sapphire substrate deep ultraviolet light emitting diode, the deep ultraviolet light emitting diode structure substrate proposed by the present invention is very easy to peel off, and after the substrate is removed, it is the nitride material. nitrogen side, The nitrogen surface material is very easy to process, and the light-extraction-enhanced micro-nano structure can be fabricated by the above method. The light-extraction-enhanced micro-nano structure is very close to the quantum well active area, only 1-2 μm. Therefore, this light-extraction-enhanced micro-nano structure The structure can greatly improve the light extraction efficiency of the device and increase the output power of the deep ultraviolet light emitting diode.

Further, the micro-nano structure enhanced by light extraction includes any of zigzag-shaped micro-structure, triangular micro-structure, nano-pillar micro-structure, trapezoidal micro-structure, inverted trapezoidal micro-structure, yurt-shaped micro-structure, micro-nano porous micro-structure, etc. One or a combination of two or more, but not limited thereto.

Further, the manufacturing method may further include: at least implementing the isolation of the epitaxial structure of the diode structure by means of wet etching. Usually, the surface grown epitaxially is the (0001) gallium surface. The gallium surface has strong chemical stability, and the diode epitaxial structure cannot be isolated by wet etching. It can only be isolated by dry etching. Dry etching usually Surface states, damage and defects will be introduced, which will not only become non-radiative recombination centers and affect the efficiency of deep ultraviolet light-emitting diodes, but also become leakage channels, affecting the reliability and stability of the device. In contrast, deep UV light-emitting diodes on sapphire substrates cannot undergo substrate lift-off, so they cannot be removed from the The nitrogen surface is wet-etched to isolate epitaxial layers or to prepare light-extraction-enhanced micro-nano structures. Different from the existing sapphire substrate deep ultraviolet light emitting diode, the deep ultraviolet light emitting diode structure substrate proposed by the present invention is very easy to peel off, and after the substrate is removed, it is the nitride material. nitrogen side, The nitrogen surface material has good chemical stability and is very easy to process, and can be used for epitaxial layer isolation or fabrication of light extraction-enhanced micro-nano structures by the above methods.

Further, the etching reagent used in the wet etching includes an alkaline or acidic solution.

The alkaline solution includes, but is not limited to, any one or a combination of two or more of KOH, NaOH, TMAH, (NH ₄ ) ₂ S, and the like.

Wherein, the acidic solution includes, but is not limited to, any one or a combination of two or more of H ₃ PO ₄ , HF or HNO ₃ .

Further, the manufacturing method can also include:

at least forming a through-hole structure in the epitaxial structure, the through-hole structure extending from the p-side of the light-emitting diode structure to the n-type contact layer,

And, an n-type electrode is formed in the through-hole structure, and the n-type electrode and the n-type contact layer form an ohmic contact.

Furthermore, an insulating medium is distributed between the n-type electrode and the active region, the electron blocking layer, the p-type contact layer and the p-type electrode.

Further, the manufacturing method further includes: bonding the p-side of the light emitting diode structure to the support sheet.

Further, the support sheet includes any one or a combination of two or more of materials such as silicon substrate, copper support sheet, molybdenum copper support sheet, molybdenum support sheet, ceramic substrate, aluminum nitride, diamond, etc. limited to this.

Further, the bonding includes metal bonding or non-metal bonding.

Further, the materials used for the metal bonding include any one or a combination of two or more materials such as AuSn, NiSn, AuAu, and NiGe, and are not limited thereto.

Further, the non-metallic bonding includes organic bonding and/or oxide bonding, and is not limited thereto.

Further, the manufacturing method may further include: removing the substrate or the substrate and the substrate formed on the substrate by at least any one of thinning, grinding, dry etching or wet etching. The buffer layer.

Further, the manufacturing method may further include the step of thinning the support sheet.

Furthermore, the manufacturing method may further include the step of depositing a metal electrode on the surface of the support sheet on the side opposite to the epitaxial structure.

In a specific implementation of the embodiment of the present invention, a method for fabricating a III-V nitride deep ultraviolet light emitting diode structure includes the following steps:

A nitride deep ultraviolet light emitting diode structure is grown on a Si substrate or a SiC substrate, which specifically includes an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer, as shown in FIG. 1 .

Clean the epitaxial wafer, deposit p-type ohmic contact metal on the entire surface of the p-type contact layer, or a combination of a transparent conductive film and a high-reflection film, and perform ohmic contact annealing to form a better ohmic contact, as shown in Figure 2.

Photolithography is performed on the metal on the p-type ohmic contact, and a through-hole structure (Via structure) is formed by an etching process, and the depth of the hole reaches the n-type contact layer for forming the n-type ohmic contact, as shown in FIG. 3 .

An insulating dielectric film is deposited on the surface of the epitaxial wafer, and then the n-type ohmic contact layer at the bottom of the hole is exposed through photolithography and etching processes, as shown in FIG. 4 .

An n-type ohmic contact metal is deposited on the surface of the epitaxial wafer to form an n-type ohmic contact, as shown in FIG. 5 .

The epitaxial wafer is flip-chip bonded to the support wafer, and the p-side of the deep ultraviolet light emitting diode is bonded to the support wafer.

The Si substrate or the SiC substrate and the buffer layer are removed by methods such as thinning, grinding, dry etching or wet etching, as shown in FIG. 6 .

exist On the nitrogen-faced n-type ohmic contact layer, any one or a combination of two or more of dry etching, wet etching, electrochemical etching, or light-assisted electrochemical etching techniques are used to prepare light-enhancing micro-nano structures , the light-enhancing micro-nano structure can be zigzag, triangular, nano-pillar structure, trapezoid, inverted trapezoid, yurt structure, micro-nano porous structure, etc., as shown in Figure 7a, Figure 7b, Figure 7c, Figure 7d, Figure 7e, Figure 7f, Figure 7g, Figure 7h. Specifically, the micro-nano structure enhanced by light extraction in Fig. 7a is a nano-column, the micro-nano structure enhanced by light extraction in Fig. 7b is a zigzag shape, the micro-nano structure enhanced by light extraction in Fig. 7c is a positive trapezoid, and in Fig. 7d The light-enhanced micro-nano structure is an inverted trapezoid, and the light-enhanced micro-nano structure in Figure 7e is a positive trapezoid. The figure size of the positive trapezoid is larger, and part of the n-type contact layer has a thin residual thickness or has been etched, Figure 7f The light-enhanced micro-nano structure is an inverted trapezoid, in which the remaining thickness of the n-type contact layer is thin or has been etched. The light-enhanced micro-nano structure in Figure 7g is a yurt structure, and the light-enhanced micro-nano structure in Figure 7h. It is a micro-nano porous structure.

Photolithography is performed on the n-type contact layer to form a pattern of a single chip, and then wet etching or dry etching is used to etch or etch to the p-type ohmic contact electrode, as shown in Figure 8.

The support sheet is thinned, and metal electrodes are deposited on the back of the support sheet, as shown in FIG. 9 .

Die dicing is performed to form individual deep ultraviolet light emitting diode dies.

In a specific implementation of the embodiment of the present invention, another method for fabricating a III-V group nitride deep ultraviolet light emitting diode structure may include the following steps:

A nitride deep ultraviolet light emitting diode structure is grown on a Si substrate or a SiC substrate, which specifically includes an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer, as shown in FIG. 10 .

Clean the epitaxial wafer, deposit p-type ohmic contact metal on the entire surface of the p-type contact layer, or a combination of a transparent conductive film and a high-reflection film, and perform ohmic contact annealing to form a better ohmic contact, as shown in Figure 11.

The epitaxial wafer is flip-chip bonded to the support wafer, and the p-side of the deep ultraviolet light emitting diode is bonded to the support wafer.

The Si substrate or the SiC substrate and the buffer layer are removed by methods such as thinning, grinding, dry etching or wet etching, as shown in FIG. 12 .

exist On the nitrogen-faced n-type ohmic contact layer, any one or a combination of two or more of dry etching, wet etching, electrochemical etching, or light-assisted electrochemical etching techniques are used to prepare light-enhancing micro-nano structures , the light-enhancing micro-nano structure can be zigzag, triangular, nano-pillar structure, trapezoid, inverted trapezoid, yurt structure, micro-nano porous structure, etc., as shown in Figure 13a, Figure 13b, Figure 13c, Figure 13d, Figure 13e, shown in Figure 13f. Specifically, the micro-nano structure enhanced by light extraction in Fig. 13a is a nano-column, the micro-nano structure enhanced by light extraction in Fig. 13b is a zigzag shape, the micro-nano structure enhanced by light extraction in Fig. 13c is a positive trapezoid, and in Fig. 13d The light-extraction-enhanced micro-nano structure is an inverted trapezoid, the light-extraction-enhanced micro-nano structure in Figure 13e is a yurt structure, and the light-extraction-enhanced micro-nano structure in Figure 13f is a micro-nano porous structure.

An n-type ohmic contact metal is deposited on a part of the surface of the epitaxial wafer to form an n-type ohmic contact, as shown in FIG. 14 .

Photolithography on the n-type contact layer to form a single chip pattern, then wet or dry etching is used to etch or etch to the p-type ohmic contact electrode, and then the support sheet is thinned, as shown in Figure 14; or The support sheet is thinned, and metal electrodes are deposited on the back of the support sheet, as shown in Figure 15.

Die dicing is performed to form individual deep ultraviolet light emitting diode dies.

In the manufacturing process described in the above-mentioned embodiments of the present invention, the deep ultraviolet light emitting diode structure is prepared by epitaxial growth using a SiC substrate or a large-sized, low-cost Si substrate, and then the deep ultraviolet light emitting diode is inverted by bonding technology. It is bonded to a heat sink with high thermal conductivity, and then the Si substrate or SiC substrate is removed by processes such as thinning, grinding, dry etching or wet etching. The nitrogen surface is made of a special light extraction enhanced micro-nano structure to improve the light extraction efficiency of deep ultraviolet light emitting diodes.

In the manufacturing process described in the above-mentioned embodiments of the present invention, by using Si substrate or SiC substrate to grow the deep ultraviolet light emitting diode structure, it is also possible to adjust the AlN/AlGaN stress control layer to establish compressive stress and change the valence of the quantum well. The band structure, on the premise of ensuring the same emission wavelength, enhances the proportion of TE mode light in the deep ultraviolet light emitting diode, thereby improving the light extraction efficiency of the device. In the manufacturing process described in the above-mentioned embodiments of the present invention, the nitride material is The special light-extraction-enhancing micro-nano structure fabricated on the nitrogen surface can also control the stress in the deep ultraviolet light-emitting diode, thereby increasing the proportion of TE mode light in the deep-ultraviolet light-emitting diode and improving the light extraction efficiency of the device.

In the manufacturing process described in the above-mentioned embodiment of the present invention, the p-type ohmic contact in the deep ultraviolet light-emitting diode is a full-surface contact, and the ohmic contact metal is connected to the entire surface of the heat sink through solder, which can connect the p-type layer with higher resistance to the whole surface. The generated heat is directly conducted to the heat sink with high thermal conductivity, thereby greatly reducing the thermal resistance of the deep ultraviolet light emitting diode, reducing the junction temperature of the device, and improving the reliability of the device.

In the manufacturing process described in the above-mentioned embodiments of the present invention, the present invention will use technologies such as wet etching to prepare the micro-nano structure with enhanced light extraction and the epitaxial layer for isolating the deep ultraviolet light emitting diode, so as to reduce the etching damage of the device, Improve device reliability and stability.

Below in conjunction with several embodiments, the technical scheme of the present invention is described in more detail:

Embodiment 1 This embodiment relates to a manufacturing process of a 320nm (light-emitting wavelength) ultraviolet light emitting diode on a Si substrate, which includes the following steps:

S1: A nitride deep ultraviolet light-emitting diode structure is grown on a Si substrate, specifically including a 1000 nm n-Al _0.3 Ga _0.7 N contact layer, 6 pairs of Al _0.15 Ga _0.85 N/Al _0.25 Ga _0.75 N multiple quantum wells, wherein each layer of Al _0.15 Ga _0.85 N quantum well 2nm, each Al _0.25 Ga _0.75 N quantum barrier 10 nm, 20 nm p-Al _0.4 Ga _0.6 N electron blocking layer, 100 nm p-Al _0.3 Ga _0.7 N contact layer. At this time, the structure of the device can be referred to as shown in FIG. 1 .

S2: Use acetone, alcohol, hydrochloric acid and deionized water to clean the epitaxial wafer, deposit 200nm AZO and 8 pairs of SiO ₂ /TiO ₂ with an optical thickness of 1/4 wavelength on the p-AlGaN contact layer in turn, and use the fast The annealing furnace was annealed at 500°C for 3 minutes in a compressed air atmosphere to form a better ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 2 .

S3: photolithography is performed on the SiO ₂ /TiO ₂ high-reflection film, and a perforated structure (Via structure) is formed by an etching process, and the depth of the hole reaches the n-type AlGaN contact layer to form an n-type ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 3 .

S4: depositing a 200nm _SiO2 insulating dielectric film on the surface of the epitaxial wafer, and then exposing the n-type AlGaN ohmic contact layer at the bottom of the hole through photolithography and etching processes. At this time, the structure of the device can be referred to as shown in FIG. 4 .

S5: Deposit 50nm Cr/300nm Au on the surface of the epitaxial wafer to form an n-type ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 5 .

S6: The p-side of the deep ultraviolet light-emitting diode is turned down, and it is flip-chip bonded to the Si support chip.

S7: The Si substrate and the buffer layer are removed by methods such as thinning, grinding, dry etching or wet etching, and the n-type contact layer is left. At this time, the structure of the device can be referred to as shown in FIG. 6 .

S8: in On the nitrogen-faced n-type AlGaN contact layer, the light-extraction-enhanced micro-nano structure is prepared by using hot phosphoric acid H ₃ PO ₄ solution. The light-extraction-enhanced micro-nano structure can be zigzag, triangular, nano-pillar structure, trapezoid, inverted trapezoid, yurt structure, etc., as shown in Figures 7a, 7b, 7c, 7d, 7e, 7f, and 7g; oxalic acid solution can also be used for electrochemical corrosion to prepare light-enhancing micro-nano porous structures, as shown in Figure 7h.

S9: Photolithography on the n-type AlGaN contact layer to form the pattern of a single chip, then wet etching with hot phosphoric acid, etching to the p-type ohmic contact electrode, and then thinning the support sheet, as shown in Figure 8; or thinning Support sheet, deposit metal electrode 30nmGe/100nmAu on the back of the support sheet, as shown in FIG. 9 .

S10: Die cutting is performed to form a single deep ultraviolet light emitting diode die.

Embodiment 2 This embodiment relates to a method for fabricating a 280nm (light-emitting wavelength) ultraviolet light-emitting diode on a SiC substrate, including the following steps:

S1: A nitride deep ultraviolet light emitting diode structure is grown on a SiC substrate, specifically including a 2000nm n-Al _0.65 Ga _0.35 N contact layer, 8 pairs of Al _0.45 Ga _0.55 N/Al _0.65 Ga _0.35 N multiple quantum wells, wherein each layer of Al _0.45 Ga _0.55 N quantum well 2.5nm, each Al _0.65 Ga _0.35 N quantum barrier 8 nm, 20 nm p-Al _0.9 Ga _0.1 N electron blocking layer, 70 nm p-Al _0.45 Ga _0.55 N contact layer. At this time, the structure of the device can be referred to as shown in FIG. 1 .

S2: Use acetone, alcohol, hydrochloric acid and deionized water to clean the epitaxial wafer, deposit 3nm Ni and 200nm Rh on the p-AlGaN contact layer in turn, and use a rapid annealing furnace to anneal at 550 °C for 10 minutes in a compressed air atmosphere, to form a better ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 2 .

S3: photolithography is performed on the p-type ohmic contact, and a perforated structure (Via structure) is formed through an etching process, and the depth of the hole is 600 nm to reach an n-type AlGaN contact layer for forming an n-type ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 3 .

S4: depositing a 150nm SiN _x insulating dielectric film on the surface of the epitaxial wafer, and then exposing the n-type AlGaN ohmic contact layer at the bottom of the hole through photolithography and etching processes. At this time, the structure of the device can be referred to as shown in FIG. 4 .

S5: deposit 50nmTi/60nmPt/100nmAu on the surface of the epitaxial wafer to form an n-type ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 5 .

S6: Flip-chip bond the p-side of the deep ultraviolet light-emitting diode with the molybdenum-copper support sheet.

S7: The SiC substrate and the buffer layer are removed by methods such as thinning, grinding, dry etching or wet etching, leaving an n-type contact layer. At this time, the structure of the device can be referred to as shown in FIG. 6 .

S8: in On the nitrogen-faced n-type AlGaN contact layer, a (NH ₄ ) ₂ S solution at 70°C is used to prepare a light-extraction-enhanced micro-nano structure. Trapezoid, yurt structure, etc., as shown in Figures 7a, 7b, 7c, 7d, 7e, 7f, 7g; oxalic acid solution can also be used for electrochemical corrosion to prepare light-enhancing micro-nano porous structures, as shown in Figure 7h Show.

S9: photolithography on the n-type AlGaN contact layer to form the pattern of a single chip, and then wet etching with a KOH solution at 85°C to etch the p-type ohmic contact electrode, and then thin the support sheet, as shown in Figure 8; Or thin the support sheet, and deposit a metal electrode of 50nm Ti/100nmAu on the back of the support sheet. At this time, the structure of the device can be referred to as shown in FIG. 9 .

S10: Die cutting is performed to form a single deep ultraviolet light emitting diode die.

Embodiment 3 This embodiment relates to a method for manufacturing a 222nm (light-emitting wavelength) ultraviolet light-emitting diode on a SiC substrate, including the following steps:

S1: A nitride deep ultraviolet light emitting diode structure is grown on a SiC substrate, specifically including a 1200 nm n-Al _0.9 Ga _0.1 N contact layer, 8 pairs of Al _0.83 Ga _0.17 N/Al _0.9 Ga _0.1 N multiple quantum wells, wherein each layer of Al _0.83 Ga _0.17 N quantum well 1.5nm, each Al _0.9 Ga _0.1 N quantum barrier 7 nm, 20 nm p-Al _0.98 Ga _0.02 N electron blocking layer, 50 nmp-Al _0.89 Ga _0.11 N contact layer. At this time, the structure of the device can be referred to as shown in FIG. 10 .

S2: Use acetone, alcohol, hydrochloric acid and deionized water to clean the epitaxial wafer, deposit 100nm Al on the p-AlGaN contact layer in turn, and use a rapid annealing furnace to anneal at 600 °C for 6 minutes in a nitrogen atmosphere to form a better Ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 11 .

S3: Flip-chip bonding the deep ultraviolet light-emitting diode with the p-side down of the copper support sheet.

S4: The SiC substrate and the buffer layer are removed by methods such as thinning, grinding, dry etching or wet etching, leaving an n-type contact layer. At this time, the structure of the device can be referred to as shown in FIG. 12 .

S5: in On the nitrogen-faced n-type AlGaN ohmic contact layer, ICP etching technology and TMAH wet etching technology are used to prepare light-enhancing micro-nano structures. , inverted trapezoid, yurt structure, etc., as shown in Figures 13a, 13b, 13c, 13d, and 13e; oxalic acid solution can also be used for electrochemical corrosion to prepare light-enhancing micro-nano porous structures, as shown in Figure 13f.

S6: deposit 20nmTi/40nmPt/300nmAu on the surface of the epitaxial wafer to form an n-type ohmic contact. At this time, the structure of the device can be referred to as shown in FIG. 14 .

S7: Photolithography is performed on the n-type AlGaN contact layer to form a single chip pattern, and then wet etching is performed with a TMAH solution at 85°C to etch the p-type ohmic contact electrode, and then the support sheet is thinned. At this time, the structure of the device can be referred to as shown in FIG. 15; or the support sheet is thinned, and metal electrodes are deposited on the back of the support sheet. At this time, the structure of the device can be referred to as shown in FIG. 16 .

S8: Die cutting is performed to form a single deep ultraviolet light emitting diode die.

In addition, the inventor of the present application also used other materials and process conditions mentioned in this specification to replace the corresponding materials and process conditions in the foregoing Examples 1-3 to prepare deep ultraviolet light-emitting diodes, and tested their performance. It is found that the deep ultraviolet light emitting diodes obtained in the embodiments of the present invention all have the advantages of high light extraction efficiency, low thermal resistance, low junction temperature, good stability, etc., and the device performance and life are also significantly improved.

It should be understood that the above-mentioned embodiments are only intended to illustrate the technical concept and characteristics of the present invention, and the purpose thereof is to enable those who are familiar with the art to understand the content of the present invention and implement it accordingly, and cannot limit the protection scope of the present invention. All equivalent changes or modifications made according to the spirit of the present invention should be included within the protection scope of the present invention.

Claims (10)

1. a III-V family nitride deep ultraviolet light-emitting diode structure, comprising an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer that are arranged in turn, and the n-type contact layer and the p-type contact layer are respectively It is electrically connected to the n-type electrode and the p-type electrode, and is characterized in that: the light-emitting surface on the n-side of the light-emitting diode structure is nitrogen side, and the A micro-nano structure with enhanced light extraction is formed on the nitrogen surface. 2 . The III-V nitride deep ultraviolet light emitting diode structure according to claim 1 , wherein the surface of the n-type contact layer opposite to the active region is the surface of the n-type contact layer. 3 . Nitrogen surface; and/or, the light extraction-enhanced micro-nano structure includes a zigzag microstructure, a triangular microstructure, a nano-pillar microstructure, a trapezoidal microstructure, an inverted trapezoidal microstructure, a yurt-shaped microstructure, and a micro-nano porous microstructure Any one or a combination of two or more. 3. The III-V nitride deep ultraviolet light emitting diode structure according to claim 1, wherein the n-type contact layer and the p-type contact layer respectively form ohmic contact with the n-type electrode and the p-type electrode; preferably The p-type electrode includes a p-type contact electrode or a transparent conductive film, and the p-type electrode forms an ohmic contact with the p-type contact layer; more preferably, the p-type contact electrode is entirely deposited on the p-type contact layer. , and the p-type contact electrode adopts a metal electrode with high reflectivity; or, the transparent conductive film is also covered with a high-reflection film; more preferably, the entire surface of the transparent conductive film is covered on the p-type contact layer. more preferably, the material of the metal electrode includes any one or a combination of two or more of Ni, Al, Ag, Pd, Pt, Au, TiN, Rh; more preferably, the transparent conductive film is The material includes any one or a combination of two or more of AZO, IGZO, ITO, ZnO and MgO; more preferably, the material of the high-reflection film includes Ag, Al, ZnO, MgO, SiO ₂ , SiN _x , TiO _2. Any one or a combination of two or more of ZrO ₂ , AlN, Al ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , HfSiO ₄ , and AlON. 4 . The III-V nitride deep ultraviolet light emitting diode structure according to claim 1 , wherein the p-side of the light emitting diode structure is bonded to a support sheet; preferably, the support sheet comprises a silicon substrate. 5 . , copper support sheet, molybdenum copper support sheet, molybdenum support sheet, ceramic substrate, aluminum nitride, diamond, any one or a combination of two or more; preferably, the bonding includes metal bonding or non-metallic bonding The materials used for the metal bonding include any one or a combination of two or more of AuSn, NiSn, AuAu, and NiGe, and the non-metallic bonding includes organic bonding and/or oxide bonding. 5 . The III-V nitride deep ultraviolet light emitting diode structure according to claim 1 , wherein a through hole structure is further formed in the light emitting diode structure, and the through hole structure extends from the p side of the light emitting diode structure. 6 . extending to the n-type contact layer, the n-type electrode is arranged in the perforated structure and forms ohmic contact with the n-type contact layer; preferably, the n-type electrode is connected to the active region, the electron blocking layer, and the p-type contact layer And an insulating medium is also distributed between the p-type electrodes; more preferably, the insulating medium includes SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , AlON, SiAlON, TiO ₂ , Ta ₂ O ₅ and ZrO ₂ and other materials Any one or a combination of two or more. 6. A method for fabricating a III-V group nitride deep ultraviolet light emitting diode structure, comprising: a step of growing on a substrate an epitaxial structure for forming a light emitting diode, the epitaxial structure including an n-type contact layer, an active region, an electron blocking layer and a p-type contact layer sequentially formed on the substrate, and the steps of making n-type electrodes and p-type electrodes electrically connected to the n-type contact layer and the p-type contact layer, respectively; It is characterized in that it also includes: The step of forming the light-extraction-enhanced micro-nano structure on the light-exiting surface on the n-side of the light-emitting diode structure, the light-exiting surface is: Nitrogen side. 7. The manufacturing method according to claim 6, wherein the micro-nano structure enhanced by light extraction comprises a zigzag microstructure, a triangular microstructure, a nano-pillar microstructure, a trapezoidal microstructure, an inverted trapezoidal microstructure, and a yurt. Any one or a combination of two or more of microstructures, micro-nano-porous microstructures; and/or, the substrate is selected from a Si substrate or a SiC substrate; and/or, the p-type electrode includes p-type electrodes type contact electrode or transparent conductive film, the p-type electrode forms ohmic contact with the p-type contact layer; A metal electrode with reflectivity; or, the transparent conductive film is also covered with a high-reflection film; more preferably, the material of the metal electrode includes Ni, Al, Ag, Pd, Pt, Au, TiN, Rh Any one or a combination of two or more; more preferably, the material of the transparent conductive film includes any one or a combination of two or more of AZO, IGZO, ITO, ZnO and MgO; more preferably, the high The material of the reverse film includes any one of Ag, Al, ZnO, MgO, SiO ₂ , SiN _x , TiO ₂ , ZrO ₂ , AlN, Al ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , HfSiO ₄ , AlON or combination of two or more. 8. The manufacturing method according to claim 6, further comprising: at least adopting any one of dry etching, wet etching, electrochemical etching, or light-assisted electrochemical etching in the described The nitrogen surface is processed to form the light-extraction-enhanced micro-nano structure, and the The nitrogen surface is the surface of the side of the n-type contact layer opposite to the active region; and/or at least the isolation of the epitaxial structure of the diode structure is realized by wet etching; preferably, the wet etching The corrosion reagents used include alkaline or acidic solutions, wherein the alkaline solution includes any one or a combination of two or more of KOH, NaOH, TMAH or (NH ₄ ) ₂ S, and the acidic solution includes H ₃ PO _4. Any one or a combination of two or more of HF or HNO ₃ . 9 . The manufacturing method according to claim 6 , further comprising: forming a perforated structure at least in the epitaxial structure, the perforated structure extending from the p-side of the light-emitting diode structure to the n-type contact layer, 10 . and, forming an n-type electrode in the perforated structure, and forming an ohmic contact between the n-type electrode and the n-type contact layer; Preferably, an insulating medium is also distributed between the n-type electrode and the active region, the electron blocking layer, the p-type contact layer and the p-type electrode; more preferably, the insulating medium includes SiO ₂ , SiN _x , SiON, Any one or a combination of two or more materials such as Al ₂ O ₃ , AlON, SiAlON, TiO ₂ , Ta ₂ O ₅ and ZrO ₂ . 10 . The manufacturing method according to claim 6 , further comprising: bonding the p-side of the light-emitting diode structure to a support sheet; preferably, the support sheet comprises a silicon substrate, a copper support sheet, a molybdenum Any one or a combination of two or more of copper support sheets, molybdenum support sheets, ceramic substrates, aluminum nitride, and diamond; preferably, the bonding includes metal bonding or non-metal bonding, and the metal bond The materials used in combination include any one or a combination of two or more of AuSn, NiSn, AuAu, and NiGe, and the non-metallic bonding includes organic bonding and/or oxide bonding; more preferably, the manufacturing The method further includes: removing the substrate or the substrate and the buffer layer formed on the substrate by any one or a combination of thinning, grinding, dry etching or wet etching; more preferably Preferably, the fabrication method further includes the step of thinning the support sheet; more preferably, the fabrication method further includes the step of depositing a metal electrode on the surface of the support sheet opposite to the epitaxial structure.