CN110031095B - Reverse bias generation method for avalanche photodiode - Google Patents
Reverse bias generation method for avalanche photodiode Download PDFInfo
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- CN110031095B CN110031095B CN201910353410.7A CN201910353410A CN110031095B CN 110031095 B CN110031095 B CN 110031095B CN 201910353410 A CN201910353410 A CN 201910353410A CN 110031095 B CN110031095 B CN 110031095B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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Abstract
The invention discloses a reverse bias generation method of an avalanche photodiode, which comprises the following steps: the microcontroller controls the digital-to-analog conversion chip to generate a high-precision low-voltage signal, the low-voltage signal generates stable voltage through a voltage follower consisting of an operational amplifier and is directly sent to the DC/DC conversion chip, and finally APD bias voltage is output; and a semiconductor refrigerator is utilized to maintain stable temperature around the DC/DC conversion chip, and meanwhile, the temperature of the contact surface of the semiconductor refrigerator and the module is monitored in real time through a thermistor and fed back to the microcontroller. The reverse bias generation method of the avalanche photodiode has the advantages that the circuit is simpler, the circuit stability is better, and the method is simple and practical; meanwhile, the stability of the output bias voltage is improved, and the temperature stability of the reverse bias voltage is also improved.
Description
Technical Field
The invention relates to the field of weak light detection, in particular to a reverse bias generation method of an avalanche photodiode.
Background
Avalanche photodiodes are widely used in systems for weak light detection. But reverse bias generation of the avalanche photodiode is critical at the time of system design. The stability and accuracy of the reverse bias voltage of the avalanche photodiode determines the stability of the signal-to-noise ratio of the generated avalanche signal. Because the avalanche photodiode for detecting weak optical signals needs a high reverse bias voltage (typically between 60V and 90V) when it is avalanche. Meanwhile, the reverse bias voltage requires characteristics of high precision and good temperature stability. Therefore, in the weak light detection, the reverse bias generation method of the snow photodiode plays a key role, and the detection performance of the system is determined, and the performance of the used equipment is indirectly determined.
In the prior art, an operational amplifier is used for directly amplifying a required voltage signal, and a bias voltage required by an avalanche photodiode is finally generated through the operational amplifier and peripheral discrete components (a resistor, a capacitor and a high-voltage-resistant transistor).
However, since all discrete devices, especially semiconductor devices (such as transistors), have a temperature drift problem, high-precision bias voltage is unstable along with the change of ambient temperature, so that reverse bias voltage is unstable, and the stability of the whole avalanche signal is affected, further affecting the performance of the weak light detection system.
Therefore, it is urgently needed to provide a method to solve the problems of poor temperature stability and low precision of the reverse bias voltage of the avalanche photodiode in the prior art.
Disclosure of Invention
The invention aims to provide a reverse bias generation method of an avalanche photodiode, which has simpler circuit, better circuit stability, simplicity and practicability; meanwhile, the stability of the output bias voltage is improved, and the temperature stability of the reverse bias voltage is also improved.
In order to achieve the above object, the present invention provides a reverse bias generation method for an avalanche photodiode, comprising:
the microcontroller controls the digital-to-analog conversion chip to generate a high-precision low-voltage signal, the low-voltage signal generates stable voltage through a voltage follower consisting of an operational amplifier and is directly sent to the DC/DC conversion chip, and finally APD bias voltage is output;
and a semiconductor refrigerator is utilized to maintain stable temperature around the DC/DC conversion chip, and meanwhile, the temperature of the contact surface of the semiconductor refrigerator and the module is monitored in real time through a thermistor and fed back to the microcontroller.
Preferably, the microcontroller is connected to a 12-bit digital-to-analog conversion chip through a 12C interface.
Preferably, the operational amplifier acts as a voltage follower for improving the stability of the output bias voltage.
Preferably, the method further comprises finally maintaining a stable temperature around the module by adjusting the semiconductor cooler power.
Preferably, the method further comprises the step of receiving the temperature compensation curve value fed back by the thermistor and stored in the microcontroller so as to automatically compensate the voltage temperature drift coefficient of the DC/DC conversion chip at the temperature.
According to the technical scheme, the design of discrete components is abandoned, and the operational amplifier is used as the follower, so that the stability of output bias voltage is improved. Meanwhile, an integrated DC/DC power conversion chip is used, and a semiconductor refrigerator is used as temperature control around the integrated power supply, so that the local temperature of the bias generation module is kept stable, and the temperature stability of the reverse bias voltage is improved. In addition, the method adopts a 12-bit digital-to-analog conversion chip, and improves the precision of the bias voltage of the avalanche diode. The requirements of the avalanche photodiode for weak light detection on high precision and good temperature stability of the applied reverse bias voltage are met. Moreover, the method abandons the design of discrete components, so that the circuit is simpler, the circuit stability is better, and the method is simple and practical.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic diagram of a reverse bias generation method of an avalanche photodiode according to the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The invention provides a reverse bias generation method of an avalanche photodiode, which comprises the following steps:
the microcontroller controls the digital-to-analog conversion chip to generate a high-precision low-voltage signal, the low-voltage signal generates stable voltage through a voltage follower consisting of an operational amplifier and is directly sent to the DC/DC conversion chip, and finally APD bias voltage is output;
and a semiconductor refrigerator is utilized to maintain stable temperature around the DC/DC conversion chip, and meanwhile, the temperature of the contact surface of the semiconductor refrigerator and the module is monitored in real time through a thermistor and fed back to the microcontroller.
In one embodiment of the invention, the microcontroller is connected to a 12-bit digital-to-analog conversion chip via a 12C interface.
And, an operational amplifier is used as a voltage follower for improving the stability of the output bias voltage. Therefore, the anti-interference capability and the driving capability of the signal are greatly improved.
In order to make the temperature around the DC/DC conversion chip proper and avoid the temperature from causing great influence on the output effect, the method also comprises the step of finally maintaining a stable temperature around the module by adjusting the power of the semiconductor refrigerator.
Further, the method also comprises the step of receiving a temperature compensation curve value fed back by the thermistor and stored in the microcontroller to automatically compensate the voltage temperature drift coefficient of the DC/DC conversion chip at the temperature.
Thus, after the semiconductor refrigerator operates for a long time (for example, three years or more), there is a high possibility that the operating performance of the semiconductor refrigerator is deteriorated (the temperature difference of the semiconductor refrigerator becomes small). When the environmental temperature is severe, the ambient temperature of the module cannot maintain the initially set temperature value (for example, set to 25 ℃, but finally only to 23 ℃), and then the microcontroller automatically compensates the voltage temperature drift coefficient of the chip at the temperature through the temperature compensation curve value existing in the microcontroller at the early stage, so that the output bias voltage is maintained at a higher precision and stability.
By the technical scheme, the design of discrete components is abandoned, and the operational amplifier is used as the follower, so that the stability of output bias voltage is improved. Meanwhile, an integrated DC/DC power conversion chip is used, and a semiconductor refrigerator is used as temperature control around the integrated power supply, so that the local temperature of the bias generation module is kept stable, and the temperature stability of the reverse bias voltage is improved. In addition, the method adopts a 12-bit digital-to-analog conversion chip, and improves the precision of the bias voltage of the avalanche diode. The requirements of the avalanche photodiode for weak light detection on high precision and good temperature stability of the applied reverse bias voltage are met. Moreover, the method abandons the design of discrete components, so that the circuit is simpler, the circuit stability is better, and the method is simple and practical.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (1)
1. A method for generating a reverse bias voltage of an avalanche photodiode includes:
the microcontroller controls the digital-to-analog conversion chip to generate a high-precision low-voltage signal, the low-voltage signal generates stable voltage through a voltage follower consisting of an operational amplifier and is directly sent to the DC/DC conversion chip, and finally APD bias voltage is output;
a semiconductor refrigerator is utilized to maintain stable temperature around the DC/DC conversion chip, and meanwhile, the temperature of the contact surface of the semiconductor refrigerator and the module is monitored in real time through a thermistor and fed back to the microcontroller;
the microcontroller is connected with a 12-bit digital-to-analog conversion chip through a 12C interface;
the operational amplifier is used as a voltage follower and is used for improving the stability of the output bias voltage;
the method further includes ultimately maintaining a stable temperature around the module by adjusting the semiconductor cooler power;
the method also comprises the step of receiving the temperature compensation curve value fed back by the thermistor and stored in the microcontroller to automatically compensate the voltage temperature drift coefficient of the DC/DC conversion chip at the temperature.
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| CN201910353410.7A CN110031095B (en) | 2019-04-29 | 2019-04-29 | Reverse bias generation method for avalanche photodiode |
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| CN117526877B (en) * | 2023-12-06 | 2024-07-19 | 惠然科技有限公司 | Signal amplification system, product and detection signal amplification method of electron microscope |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170362A (en) * | 2007-11-08 | 2008-04-30 | 华东师范大学 | A circuit module for APD single photon detection |
| CN101692428A (en) * | 2009-09-09 | 2010-04-07 | 贵州振华风光半导体有限公司 | Integrating method of hybrid integrated circuit with controllable working temperature |
| CN103728030A (en) * | 2013-12-20 | 2014-04-16 | 中国科学院合肥物质科学研究院 | Self-adaptive near-infrared single-photon detector for APD temperature |
| CN109347064A (en) * | 2018-09-30 | 2019-02-15 | 合肥巨动力系统有限公司 | A kind of sampling of three-phase current and overcurrent protection circuit |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170362A (en) * | 2007-11-08 | 2008-04-30 | 华东师范大学 | A circuit module for APD single photon detection |
| CN101692428A (en) * | 2009-09-09 | 2010-04-07 | 贵州振华风光半导体有限公司 | Integrating method of hybrid integrated circuit with controllable working temperature |
| CN103728030A (en) * | 2013-12-20 | 2014-04-16 | 中国科学院合肥物质科学研究院 | Self-adaptive near-infrared single-photon detector for APD temperature |
| CN109347064A (en) * | 2018-09-30 | 2019-02-15 | 合肥巨动力系统有限公司 | A kind of sampling of three-phase current and overcurrent protection circuit |
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