CN110028330A - A kind of ceramic matric composite and preparation method thereof - Google Patents
A kind of ceramic matric composite and preparation method thereof Download PDFInfo
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- CN110028330A CN110028330A CN201810026239.4A CN201810026239A CN110028330A CN 110028330 A CN110028330 A CN 110028330A CN 201810026239 A CN201810026239 A CN 201810026239A CN 110028330 A CN110028330 A CN 110028330A
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- 239000002131 composite material Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000000919 ceramic Substances 0.000 title claims abstract description 15
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 title claims abstract 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 50
- JNVMRMZYZCJCJC-UHFFFAOYSA-N [Si].[Ta].[Hf] Chemical compound [Si].[Ta].[Hf] JNVMRMZYZCJCJC-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000012700 ceramic precursor Substances 0.000 claims abstract description 22
- 238000005336 cracking Methods 0.000 claims abstract description 20
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 19
- 239000004917 carbon fiber Substances 0.000 claims abstract description 19
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000001764 infiltration Methods 0.000 claims abstract description 10
- 230000008595 infiltration Effects 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000011148 porous material Substances 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 238000000197 pyrolysis Methods 0.000 claims abstract description 4
- 238000007711 solidification Methods 0.000 claims abstract description 3
- 230000008023 solidification Effects 0.000 claims abstract description 3
- QKQUUVZIDLJZIJ-UHFFFAOYSA-N hafnium tantalum Chemical compound [Hf].[Ta] QKQUUVZIDLJZIJ-UHFFFAOYSA-N 0.000 claims description 63
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 52
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 29
- 239000007787 solid Substances 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 18
- 229920006026 co-polymeric resin Polymers 0.000 claims description 15
- 229920003257 polycarbosilane Polymers 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 7
- 238000004132 cross linking Methods 0.000 claims description 6
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 6
- 239000003446 ligand Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- 238000005470 impregnation Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000007334 copolymerization reaction Methods 0.000 claims 5
- 229920005989 resin Polymers 0.000 claims 5
- 239000011347 resin Substances 0.000 claims 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 2
- 229910052573 porcelain Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 18
- 238000002679 ablation Methods 0.000 abstract description 16
- 239000011159 matrix material Substances 0.000 abstract description 14
- 230000003078 antioxidant effect Effects 0.000 abstract description 3
- 238000000280 densification Methods 0.000 abstract description 3
- 239000003963 antioxidant agent Substances 0.000 abstract 1
- 235000006708 antioxidants Nutrition 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 238000007168 polymer infiltration and pyrolysis Methods 0.000 abstract 1
- 239000011153 ceramic matrix composite Substances 0.000 description 18
- 239000006104 solid solution Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 18
- 239000011206 ternary composite Substances 0.000 description 18
- 230000002787 reinforcement Effects 0.000 description 13
- 238000007654 immersion Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 229910052735 hafnium Inorganic materials 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000011216 ultra-high temperature ceramic matrix composite Substances 0.000 description 6
- 229910026551 ZrC Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 3
- -1 allyl phenolic aldehyde Chemical class 0.000 description 3
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical group OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 3
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical group [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 238000002464 physical blending Methods 0.000 description 2
- 239000002296 pyrolytic carbon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000011215 ultra-high-temperature ceramic Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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Abstract
Description
技术领域technical field
本发明涉及一种陶瓷基复合材料及其制备方法,具体涉及一种碳/铪钽固溶体-碳化硅陶瓷基复合材料及其制备方法,属于复合材料技术领域。The invention relates to a ceramic matrix composite material and a preparation method thereof, in particular to a carbon/hafnium tantalum solid solution-silicon carbide ceramic matrix composite material and a preparation method thereof, belonging to the technical field of composite materials.
背景技术Background technique
碳纤维增韧碳化硅陶瓷基复合材料(Cf/SiC复合材料)是一种高性能的热结构材料。它克服了单相陶瓷材料脆性的致命弱点,具有低密度、耐高温、高强度、抗氧化和耐烧蚀等优异特性,可作为航空航天结构材料、刹车材料,并已经在高超声速飞行器的翼舵上得到了应用。但是,长期以来的研究表明,传统Cf/SiC复合材料的长时抗氧化使用温度不超过1650℃。当高超声速飞行器的马赫数超过6时,其高温结构件如端头、前缘、发动机燃烧室、发动机尾喷管等需承受很高的温度、温度冲击、强氧化和气流冲刷环境,温度超过2000℃。为了提高Cf/SiC复合材料的高温抗氧化性能和耐烧蚀性能,在其基体中引入超高温陶瓷相,制备出含有多组元基体的超高温陶瓷基复合材料是一种有效的方法。Carbon fiber toughened silicon carbide ceramic matrix composites (C f /SiC composites) are high-performance thermal structural materials. It overcomes the Achilles heel of the brittleness of single-phase ceramic materials, and has excellent properties such as low density, high temperature resistance, high strength, oxidation resistance and ablation resistance. It can be used as aerospace structural materials, brake materials, and has been used in hypersonic aircraft wings. applied to the rudder. However, long-term research has shown that the long-term anti-oxidation temperature of traditional C f /SiC composites does not exceed 1650 °C. When the Mach number of a hypersonic vehicle exceeds 6, its high-temperature structural parts such as ends, leading edges, engine combustion chambers, engine nozzles, etc. need to withstand high temperature, temperature shock, strong oxidation and airflow scouring environment, and the temperature exceeds 2000℃. In order to improve the high temperature oxidation resistance and ablation resistance of C f /SiC composites, it is an effective method to introduce ultra-high temperature ceramic phase into its matrix to prepare ultra-high temperature ceramic matrix composites containing multi-component matrix.
碳化锆是一种高熔点的碳化物,将碳化锆引入到Cf/SiC复合材料的基体中,制备出Cf/SiC-ZrC复合材料,具有良好的抗氧化性能,耐温等级得到大幅提升。例如专利申请CN201410431045.4、CN201410348051.3、CN201310178206.9等分别利用热压烧结法、前驱体浸渍裂解法、反应熔渗法制备了耐高温抗氧化的Cf/SiC-ZrC复合材料,但是ZrC在高温氧化气氛下氧化生成ZrO2,ZrO2与基体的结合强度低,导致复合材料的力学性能下降。因此,在2500℃以上氧化服役环境下,Cf/SiC-ZrC复合材料的综合性能较差,限制了Cf/SiC-ZrC复合材料的应用。Zirconium carbide is a kind of high melting point carbide. Zirconium carbide is introduced into the matrix of C f /SiC composite material to prepare C f /SiC-ZrC composite material, which has good oxidation resistance and greatly improved temperature resistance. . For example, patent applications CN201410431045.4, CN201410348051.3, CN201310178206.9, etc. have respectively prepared high temperature and oxidation resistant C f /SiC-ZrC composite materials by hot pressing sintering method, precursor impregnation cracking method and reactive infiltration method, but ZrC ZrO 2 is formed by oxidation in a high temperature oxidizing atmosphere, and the bond strength between ZrO 2 and the matrix is low, which leads to the decrease of the mechanical properties of the composite material. Therefore, in the oxidative service environment above 2500 °C, the comprehensive properties of C f /SiC-ZrC composites are poor, which limits the application of C f /SiC-ZrC composites.
铪钽固溶体具有超高熔点,如Ta4HfC5(一种铪钽固溶体)的熔点超过4000℃,且抗氧化性好。但是,目前还未见关于铪钽固溶体改性碳/碳化硅等复合材料的报道,究其原因可能是,基于铪钽固溶体的特性,还没有合适的工艺将铪钽固溶体均匀分散于碳化硅中。因此,基于上述背景,亟需一种耐高温且同时兼具优异力学性能的陶瓷基复合材料。The hafnium-tantalum solid solution has an ultra-high melting point, such as the melting point of Ta 4 HfC 5 (a hafnium-tantalum solid solution) exceeding 4000°C, and has good oxidation resistance. However, there has been no report on the hafnium-tantalum solid solution modified carbon/silicon carbide and other composite materials. The reason may be that, based on the characteristics of the hafnium-tantalum solid solution, there is no suitable process to uniformly disperse the hafnium-tantalum solid solution in silicon carbide. . Therefore, based on the above background, there is an urgent need for a ceramic matrix composite material with high temperature resistance and excellent mechanical properties at the same time.
发明内容SUMMARY OF THE INVENTION
在下文中给出关于本发明的简要概述,以便提供关于本发明的某些方面的基本理解。应当理解,这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分,也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念,以此作为稍后论述的更详细描述的前序。The following presents a brief summary of the present invention in order to provide a basic understanding of certain aspects of the invention. It should be understood that this summary is not an exhaustive overview of the invention. It is not intended to identify key or essential parts of the invention nor to limit the scope of the invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
本发明的目的在于克服现有技术中的不足,提供一种陶瓷基复合材料及其制备方法。The purpose of the present invention is to overcome the deficiencies in the prior art, and to provide a ceramic matrix composite material and a preparation method thereof.
本发明的技术解决方案为:The technical solution of the present invention is:
一方面,本发明提供一种陶瓷基复合材料,所述复合材料以碳纤维预制体为骨架,且将所述碳纤维预制体浸渍于铪钽硅三元复相陶瓷前驱体溶液中并经过固化、裂解制得。In one aspect, the present invention provides a ceramic matrix composite material. The composite material uses a carbon fiber preform as a skeleton, and the carbon fiber preform is immersed in a hafnium-tantalum-silicon ternary composite ceramic precursor solution and undergoes solidification and cracking. be made of.
进一步的,所述的铪钽硅三元复相陶瓷前驱体溶液包含铪钽配位共聚物树脂、聚碳硅烷和碳源前驱体。Further, the hafnium-tantalum-silicon ternary composite ceramic precursor solution comprises a hafnium-tantalum coordination copolymer resin, polycarbosilane and a carbon source precursor.
进一步的,所述的铪钽硅三元复相陶瓷前驱体溶液中,碳源前驱体的含量高于铪钽配位共聚物树脂含量。Further, in the hafnium-tantalum-silicon ternary composite ceramic precursor solution, the content of the carbon source precursor is higher than that of the hafnium-tantalum coordination copolymer resin.
进一步的,所述的铪钽配位共聚物树脂以四氯化铪、五氯化钽为原料,并加入一定量的配体经聚合反应获得。Further, the hafnium-tantalum coordination copolymer resin is obtained by using hafnium tetrachloride and tantalum pentachloride as raw materials, and adding a certain amount of ligands through a polymerization reaction.
进一步的,所述的裂解温度为1600~1800℃。Further, the pyrolysis temperature is 1600-1800°C.
另一方面,本发明还提供一种陶瓷基复合材料的制备方法,包括以下步骤:On the other hand, the present invention also provides a preparation method of a ceramic matrix composite material, comprising the following steps:
步骤1、复合材料预制体制备,Step 1. Preparation of composite material preform,
对碳纤维织物进行致密化,得到密度为1.10~1.25g/cm3的复合材料预制体;Densifying the carbon fiber fabric to obtain a composite material preform with a density of 1.10-1.25 g/cm 3 ;
本步骤为本领域公知技术,可采用化学气相沉积工艺或其他致密化方法,只要能保证所得复合材料增强体的密度在上述范围即可;原因在于:若密度太大,则气孔太小,后续PIP工艺的效率低,若密度太小,则热解碳界面层太薄,碳纤维易受损伤;This step is known in the art, and chemical vapor deposition process or other densification methods can be used, as long as the density of the obtained composite material reinforcement can be guaranteed to be within the above range; the reason is: if the density is too large, the pores are too small, and the subsequent The efficiency of the PIP process is low. If the density is too small, the pyrolytic carbon interface layer is too thin, and the carbon fiber is easily damaged;
本发明采用气相沉积工艺制备复合材料预制体(可根据实际需要选择其他工艺):将碳纤维织物置于气相沉积炉中,利用化学气相沉积工艺在预制体表面沉积热解碳界面层,沉积时间优选为300~500小时;The present invention adopts a vapor deposition process to prepare a composite material preform (other processes can be selected according to actual needs): the carbon fiber fabric is placed in a vapor deposition furnace, and a chemical vapor deposition process is used to deposit a pyrolytic carbon interface layer on the surface of the preform. The deposition time is preferably 300 to 500 hours;
本发明采用的碳纤维织物没有特殊要求,例如可以是针刺结构、细编穿刺结构或缝合结构,其目的在于作为碳/铪钽固溶体-碳化硅复合材料的骨架,起到增强增韧的作用;The carbon fiber fabric used in the present invention has no special requirements, for example, it can be a needle-punched structure, a fine-knitted puncture structure or a sutured structure, and its purpose is to serve as the skeleton of the carbon/hafnium-tantalum solid solution-silicon carbide composite material, and play the role of strengthening and toughening;
步骤2、复合材料预制体的交联固化,Step 2, cross-linking and curing of composite material preform,
将步骤1所述复合材料预制体采用真空压力浸渍于铪钽硅三元复相陶瓷前驱体溶液中,并进行加压交联固化;The composite material preform described in step 1 is immersed in the precursor solution of the hafnium-tantalum-silicon ternary composite ceramic precursor using vacuum pressure, and is subjected to pressure cross-linking and curing;
本步骤中,真空压力浸渍、固化的工艺条件优选为:首先在真空度为5~200KPa的环境下浸渍1~2小时,然后在压强为2~6MPa的压力罐中浸渍2~4小时,使前驱体完全浸渍于预制体中,最后在压强为8~20MPa的压力罐中交联固化8~15小时,该工艺条件下得到的材料固化效果更好、且固化和裂解后密度更高;In this step, the process conditions for vacuum pressure impregnation and curing are preferably as follows: first, immersion in an environment with a vacuum degree of 5-200KPa for 1-2 hours, and then immersion in a pressure tank with a pressure of 2-6MPa for 2-4 hours, so that The precursor is completely immersed in the preform, and finally cross-linked and cured in a pressure tank with a pressure of 8 to 20 MPa for 8 to 15 hours. The material obtained under this process has better curing effect and higher density after curing and cracking;
本步骤中,所述的铪钽硅三元复相陶瓷前驱体溶液包含铪钽配位共聚物树脂、聚碳硅烷和碳源前驱体;In this step, the hafnium-tantalum-silicon ternary composite ceramic precursor solution comprises hafnium-tantalum coordination copolymer resin, polycarbosilane and carbon source precursor;
进一步的,所述的铪钽配位共聚物树脂以四氯化铪、五氯化钽为原料,并加入一定量的配体经聚合反应获得;Further, the hafnium-tantalum coordination copolymer resin is obtained by using hafnium tetrachloride and tantalum pentachloride as raw materials, and adding a certain amount of ligands through a polymerization reaction;
优选的,所述的铪钽配位共聚物树脂制备方法为:Preferably, the preparation method of the hafnium-tantalum coordination copolymer resin is:
以重量份数计,将1份四氯化铪、1~4份五氯化钽和5份正丙醇混合,置于0℃的冰水浴中,滴加3~5滴催化剂,反应2~4小时。然后加入5份配体,在70~90℃下聚合反应3~5小时。常压蒸馏5小时,除去多余的溶剂,得到铪钽配位共聚物树脂。In parts by weight, 1 part of hafnium tetrachloride, 1 to 4 parts of tantalum pentachloride and 5 parts of n-propanol are mixed, placed in an ice-water bath at 0°C, and 3 to 5 drops of catalyst are added dropwise to react for 2 to 4 hours. Then, 5 parts of ligands are added, and the polymerization reaction is carried out at 70-90° C. for 3-5 hours. Atmospheric distillation was carried out for 5 hours to remove excess solvent to obtain a hafnium-tantalum coordination copolymer resin.
其中,所述的催化剂为胺类,优选为二乙胺,其优点是加快四氯化铪、五氯化钽与正丙醇的反应速度;Wherein, the catalyst is an amine, preferably diethylamine, which has the advantage of accelerating the reaction speed of hafnium tetrachloride, tantalum pentachloride and n-propanol;
所述的配体为有机小分子,优选为乙酰丙酮,其优点是容易与金属铪、钽形成配位聚合物,使得铪、钽可以连接到同一个聚合物分子链中。The ligand is an organic small molecule, preferably acetylacetone, which has the advantage of easily forming a coordination polymer with metal hafnium and tantalum, so that hafnium and tantalum can be connected to the same polymer molecular chain.
进一步的,所述的铪钽硅三元复相陶瓷前驱体溶液中,碳源前驱体的含量高于铪钽配位共聚物树脂含量,且优选碳源前驱体比铪钽配位共聚物树脂多1~2份,此种配置的优点是裂解时容易形成铪钽固溶体,反应比较完全,如果碳源前驱体过少,则会形成碳化铪、碳化钽等超高温陶瓷,如果碳源前驱体过多,则游离碳较多,会降低复合材料的高温耐烧蚀性能;Further, in the hafnium-tantalum-silicon ternary composite ceramic precursor solution, the content of the carbon source precursor is higher than the content of the hafnium-tantalum coordination copolymer resin, and preferably the carbon source precursor is higher than the hafnium-tantalum coordination copolymer resin. The advantage of this configuration is that it is easy to form a hafnium-tantalum solid solution during cracking, and the reaction is relatively complete. If the carbon source precursor is too small, ultra-high temperature ceramics such as hafnium carbide and tantalum carbide will be formed. If it is too much, there will be more free carbon, which will reduce the high temperature ablation resistance of the composite material;
进一步的,所述的碳源前驱体的种类没有特殊限制,可采用本领域中制备陶瓷材料时常用的能够提供碳源的材料即可,本发明中优选为酚醛树脂,更优选为烯丙基酚醛树脂;Further, the types of the carbon source precursors are not particularly limited, and materials that can provide carbon sources commonly used in the preparation of ceramic materials in the art can be used. In the present invention, it is preferably a phenolic resin, more preferably an allyl group. Phenolic Resin;
进一步的,优选的,所述的铪钽硅三元复相陶瓷前驱体溶液的制备方法为:Further, preferably, the preparation method of the hafnium tantalum silicon ternary composite ceramic precursor solution is:
以重量份数计,将1~5份铪钽配位共聚物树脂、1份聚碳硅烷和2~6份碳源前驱体加入到4~5份溶剂中,机械搅拌5~8小时,静置5~10小时,得到均匀的铪钽硅三元复相陶瓷前驱体溶液;其中,所述的溶剂为醇类和二甲苯,其优点是可以同时溶解铪钽配位共聚物树脂和聚碳硅烷,优选为乙二醇二乙醚和二甲苯;In parts by weight, 1 to 5 parts of hafnium-tantalum coordination copolymer resin, 1 part of polycarbosilane and 2 to 6 parts of carbon source precursor are added to 4 to 5 parts of solvent, mechanically stirred for 5 to 8 hours, Leave for 5 to 10 hours to obtain a uniform hafnium-tantalum-silicon ternary composite ceramic precursor solution; wherein, the solvents are alcohols and xylene, which have the advantage of simultaneously dissolving hafnium-tantalum coordination copolymer resin and polycarbon Silane, preferably ethylene glycol diethyl ether and xylene;
进一步的,所述的铪钽硅三元复相陶瓷前驱体溶液的粘度优选为100~250mPa.s,溶液固含量为50%~70%;在此范围内的铪钽硅三元复相陶瓷前驱体容易浸渍到碳纤维预制体中,减少浸渍时间;Further, the viscosity of the hafnium-tantalum-silicon ternary composite ceramic precursor solution is preferably 100-250 mPa.s, and the solid content of the solution is 50%-70%; within this range, the hafnium-tantalum-silicon ternary composite ceramics The precursor is easily impregnated into the carbon fiber preform, reducing the impregnation time;
进一步的,所述的交联固化温度为150~350℃,固化时间为8~15小时,其目的在于铪钽硅三元复相陶瓷前驱体可在较短的时间内充分固化;Further, the cross-linking curing temperature is 150-350°C, and the curing time is 8-15 hours, the purpose is that the hafnium-tantalum-silicon ternary composite ceramic precursor can be fully cured in a relatively short period of time;
步骤3、将步骤2得到的交联固化后的预制体置于裂解炉中进行裂解;Step 3, placing the cross-linked and solidified preform obtained in step 2 in a cracking furnace for cracking;
所述的裂解在氮气或氩气等惰性气氛中进行,其裂解温度为1600~1800℃,在此温度内裂解可以获得纯度较高的铪钽固溶体;所述的裂解时间优选为3~5小时;The cracking is carried out in an inert atmosphere such as nitrogen or argon, and the cracking temperature is 1600-1800° C. At this temperature, a high-purity hafnium-tantalum solid solution can be obtained by cracking; the cracking time is preferably 3-5 hours ;
本发明的高温裂解过程为:在1000℃以下,会生成碳化硅、铪和钽的氧化物,在1600℃以上,哈和钽的氧化物与碳发生反应,形成铪钽固溶体,基体中碳化硅和铪钽固溶体形成连续的结构,在高温氧化环境下,碳化硅会生成二氧化硅膜,阻止氧气向基体内部的扩散,铪钽固溶体作为具有超高温熔点的物质,起到维持基体的强度作用,在此种裂解条件下,可以得到分布均匀的碳化硅和铪钽固溶体,充分发挥两者的协同抗氧化作用;The high-temperature pyrolysis process of the present invention is as follows: below 1000° C., oxides of silicon carbide, hafnium and tantalum will be formed, and above 1,600° C., the oxides of hafnium and tantalum react with carbon to form a hafnium-tantalum solid solution, and silicon carbide in the matrix It forms a continuous structure with the hafnium-tantalum solid solution. In the high-temperature oxidation environment, silicon carbide will form a silicon dioxide film to prevent the diffusion of oxygen into the matrix. As a substance with an ultra-high temperature melting point, the hafnium-tantalum solid solution plays a role in maintaining the strength of the matrix , Under such cracking conditions, uniformly distributed silicon carbide and hafnium-tantalum solid solutions can be obtained, giving full play to the synergistic antioxidant effect of the two;
步骤4、采用化学气相渗透法对步骤3得到的复合材料进行封孔处理,在复合材料表层沉积0.1~0.3mm厚的碳化硅涂层。Step 4, using chemical vapor infiltration method to seal the pores of the composite material obtained in step 3, and deposit a silicon carbide coating with a thickness of 0.1-0.3 mm on the surface layer of the composite material.
本发明采用气相渗透工艺制备碳化硅涂层:将致密的碳/铪钽固溶体-碳化硅基体置于气相沉积炉中,利用化学气相渗透工艺在基体表面沉积碳化硅涂层,沉积时间优选为30~50小时,其目的是为了进一步减少基体表面的孔隙率,提高复合材料的抗氧化性能。The present invention adopts the vapor phase infiltration process to prepare the silicon carbide coating: the dense carbon/hafnium tantalum solid solution-silicon carbide substrate is placed in a vapor deposition furnace, and the chemical vapor infiltration process is used to deposit the silicon carbide coating on the surface of the substrate, and the deposition time is preferably 30 ~50 hours, the purpose is to further reduce the porosity of the matrix surface and improve the oxidation resistance of the composite material.
进一步的,所述的制备方法中,在步骤4之前还包括:Further, in the described preparation method, before step 4, also comprises:
重复步骤2、3,直至裂解得到的复合材料的密度超过2.05g/cm3,其目的在于提高碳/铪钽固溶体-碳化硅复合材料的致密化程度,减少复合材料的孔隙率。Steps 2 and 3 are repeated until the density of the composite material obtained by cracking exceeds 2.05 g/cm 3 , which aims to improve the densification degree of the carbon/hafnium tantalum solid solution-silicon carbide composite material and reduce the porosity of the composite material.
本发明的设计原理为:The design principle of the present invention is:
基于现有技术,目前还未见碳/铪钽固溶体-碳化硅超高温陶瓷基复合材料,经分析原因在于:采用现有技术的原料、方法均难以使铪钽固溶体与碳化硅均匀分布,例如若采用现有的物理共混方法,碳化硅与其中一个分散均匀,与另一个分散不均匀,导致复合材料基体中碳化硅分散不均匀,无法制备出性能优异的碳/铪钽固溶体-碳化硅复合材料。Based on the prior art, there is no carbon/hafnium-tantalum solid solution-silicon carbide ultra-high temperature ceramic matrix composite material yet. The reason is that it is difficult to make the hafnium-tantalum solid solution and silicon carbide evenly distributed by using the raw materials and methods of the prior art, such as If the existing physical blending method is used, the silicon carbide is uniformly dispersed with one of them, but not uniformly dispersed with the other, resulting in uneven dispersion of silicon carbide in the matrix of the composite material, and it is impossible to prepare a carbon/hafnium tantalum solid solution-silicon carbide with excellent performance. composite material.
而铪钽固溶体的熔点超过4000℃,且其抗氧化性能优异,将其引入到碳/碳化硅的基体中,则将可能得到性能更加优异的超高温陶瓷基复合材料。基于这一思路,本发明首先制备了均匀的铪钽硅比例可控的铪钽硅三元复相陶瓷前驱体溶液,该前驱体中铪和钽在同一条共聚物的分子链上,且比例可调控,区别于现有的物理共混,在此基础上,本发明选择了适合的制备方法,在远低于铪钽固溶体熔点温度下(1600~1800℃)就可以制备出铪钽固溶体和碳化硅均匀分散且比列可控的碳/铪钽固溶体-碳化硅复合材料。The melting point of hafnium-tantalum solid solution exceeds 4000 ℃, and its anti-oxidation performance is excellent. If it is introduced into the carbon/silicon carbide matrix, it is possible to obtain ultra-high temperature ceramic matrix composites with better performance. Based on this idea, the present invention firstly prepares a uniform hafnium-tantalum-silicon ternary composite ceramic precursor solution with a controllable ratio of hafnium-tantalum-silicon. It can be adjusted and controlled, and is different from the existing physical blending. On this basis, the present invention selects a suitable preparation method, and can prepare the hafnium-tantalum solid solution and A carbon/hafnium-tantalum solid solution-silicon carbide composite material with uniform dispersion of silicon carbide and controllable ratio.
本发明相对于现有技术的有益效果:The beneficial effects of the present invention relative to the prior art:
本发明首先选择了能够同时提供铪源和钽源的铪钽配位共聚物,该共聚物中,铪和钽在同一分子链上,使得前驱体中铪和钽的比例可调控;并在此基础上,本发明选择了适合的制备方法,在远低于铪钽固溶体熔点温度下(1600~1800℃)就可以制备出铪钽固溶体、碳化硅均匀分散且比列可控的碳/铪钽固溶体-碳化硅复合材料,本发明提供的复合材料中碳化铪和碳化钽具有强的化学键作用,可形成高熔点的固溶体,充分发挥碳化铪和碳化钽的协同抗氧化作用。The present invention first selects a hafnium-tantalum coordination copolymer that can provide both a hafnium source and a tantalum source. In the copolymer, hafnium and tantalum are on the same molecular chain, so that the ratio of hafnium and tantalum in the precursor can be regulated; and here On the basis, the present invention selects a suitable preparation method, and at a temperature far below the melting point of the hafnium-tantalum solid solution (1600-1800° C.), the hafnium-tantalum solid solution, the silicon carbide is uniformly dispersed and the ratio of carbon/hafnium-tantalum is controllable can be prepared. In the solid solution-silicon carbide composite material, the hafnium carbide and tantalum carbide in the composite material provided by the present invention have strong chemical bonds, can form a solid solution with a high melting point, and give full play to the synergistic antioxidant effect of hafnium carbide and tantalum carbide.
本发明提供的复合材料中基体各组元分布均匀,铪钽固溶体和碳化硅能够发挥协同抗氧化作用,使得复合材料的基体致密,高温力学性能突出,具有耐烧蚀、抗氧化、韧性好等优点,特别是具有优异的耐烧蚀性能,通过了3000℃的氧化烧蚀考核试验。此外,本发明的制备方法具有工艺简单,不需要任何添加剂,制备温度低,周期短,易于工业化实施。且可以制备出形状复杂的近尺寸的复合材料构件,可广泛应用于高超声速飞行器的发动机燃烧室、尾喷管等构件的制备,具有广阔的应用前景。In the composite material provided by the invention, each component of the matrix is evenly distributed, and the hafnium-tantalum solid solution and silicon carbide can play a synergistic anti-oxidation effect, so that the matrix of the composite material is dense, the high-temperature mechanical properties are outstanding, and the ablation resistance, oxidation resistance, good toughness, etc. Advantages, especially excellent ablation resistance, passed the 3000 ℃ oxidative ablation assessment test. In addition, the preparation method of the present invention has the advantages of simple process, no need for any additives, low preparation temperature, short period and easy industrial implementation. And the composite material component with complex shape and near size can be prepared, which can be widely used in the preparation of components such as engine combustion chamber and tail nozzle of hypersonic aircraft, and has broad application prospects.
具体实施方式Detailed ways
下面对本发明的具体实施例进行详细说明。在下面的描述中,出于解释而非限制性的目的,阐述了具体细节,以帮助全面地理解本发明。然而,对本领域技术人员来说显而易见的是,也可以在脱离了这些具体细节的其它实施例中实践本发明。Specific embodiments of the present invention will be described in detail below. In the following description, for purposes of explanation and not limitation, specific details are set forth in order to assist in a comprehensive understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details.
在此需要说明的是,本发明的内容不仅仅只局限于下面的实施例。It should be noted here that the content of the present invention is not limited to the following embodiments.
实施例1Example 1
一种碳/铪钽固溶体-碳化硅超高温陶瓷基复合材料的制备方法,其具体步骤是:A preparation method of carbon/hafnium tantalum solid solution-silicon carbide ultra-high temperature ceramic matrix composite material, the specific steps are:
1)将针刺碳纤维增强体在1700℃的高温下处理2小时,然后在气相沉积炉中分别沉积150小时、120小时、100小时,使得纤维增强体的密度达到1.10g/cm3;1) The needle-punched carbon fiber reinforcement is treated at a high temperature of 1700° C. for 2 hours, and then deposited in a vapor deposition furnace for 150 hours, 120 hours, and 100 hours, respectively, so that the density of the fiber reinforcement reaches 1.10 g/cm 3 ;
2)将5公斤铪钽共聚物树脂、1公斤聚碳硅烷和6公斤烯丙基酚醛机械搅拌5小时,静置10小时后,配制成铪钽硅三元复相陶瓷前驱体溶液;2) mechanically stirring 5 kilograms of hafnium-tantalum copolymer resin, 1 kilogram of polycarbosilane and 6 kilograms of allyl phenolic aldehyde for 5 hours, after standing for 10 hours, be mixed with a hafnium-tantalum-silicon ternary composite ceramic precursor solution;
3)将1)获得的纤维增强体浸渍在2)的前驱体溶液中,浸渍条件是:在100KPa的真空度下浸渍2小时,然后在3MPa压强下浸渍2小时。最后,进一步加压至10MPa,升温至150℃下保温2小时,200℃下保温2小时,350℃下保温4小时,使铪钽硅三元复相陶瓷前驱体充分交联固化;3) The fiber reinforcement obtained in 1) was immersed in the precursor solution of 2), and the immersion conditions were as follows: immersion under a vacuum degree of 100KPa for 2 hours, and then immersion under a pressure of 3MPa for 2 hours. Finally, further pressurize to 10MPa, heat up to 150°C for 2 hours, keep at 200°C for 2 hours, and keep at 350°C for 4 hours, so that the hafnium-tantalum-silicon ternary composite ceramic precursor is fully cross-linked and cured;
4)将固化后的碳纤维增强体置于裂解炉中,氩气气氛下,在1600℃下裂解4小时;4) Put the solidified carbon fiber reinforcement in a cracking furnace, under an argon atmosphere, crack at 1600 ° C for 4 hours;
5)重复步骤2)和3)10次,复合材料的密度超过2.2g/cm3,重量增加率小于1%;5) Repeat steps 2) and 3) 10 times, the density of the composite material exceeds 2.2g/cm3, and the weight increase rate is less than 1%;
6)采用化学气相渗透法对步骤(4)得到的复合材料进行封孔处理,在复合材料表层沉积0.1~0.3mm厚的碳化硅涂层。6) Sealing the composite material obtained in step (4) by chemical vapor infiltration method, and depositing a silicon carbide coating with a thickness of 0.1-0.3 mm on the surface layer of the composite material.
对上述制备的碳/铪钽固溶体-碳化硅复合材料用排水法进行密度测试,测定的密度为2.36g/cm3,复合材料的致密程度较高;The density test of the carbon/hafnium tantalum solid solution-silicon carbide composite material prepared above was carried out by the drainage method, and the measured density was 2.36g/cm 3 , and the density of the composite material was relatively high;
对上述制备的碳/铪钽固溶体-碳化硅复合材料进行高温力学性能测试,在1600℃下的弯曲强度达到322MPa;The high-temperature mechanical properties of the carbon/hafnium-tantalum solid solution-silicon carbide composites prepared above were tested, and the bending strength at 1600°C reached 322MPa;
对上述制备的碳/铪钽固溶体-碳化硅复合材料用氧乙炔焰进行耐烧蚀性能测试,在3000℃的高温下烧蚀20s,其线烧蚀率为4.28×10-3mm/s;The carbon/hafnium tantalum solid solution-silicon carbide composite material prepared above was tested for ablation resistance with an oxyacetylene flame, and the ablation rate was 4.28×10-3mm/s at a high temperature of 3000°C for 20s;
测试结果见表1。The test results are shown in Table 1.
实施例2Example 2
一种碳/铪钽固溶体-碳化硅超高温陶瓷基复合材料的制备方法,其具体步骤是:A preparation method of carbon/hafnium tantalum solid solution-silicon carbide ultra-high temperature ceramic matrix composite material, the specific steps are:
1)将缝合碳纤维增强体在1700℃的高温下处理2小时,然后在气相沉积炉中分别沉积150小时、100小时、100小时,使得纤维增强体的密度达到1.20g/cm3;1) The stitched carbon fiber reinforcement was treated at a high temperature of 1700° C. for 2 hours, and then deposited in a vapor deposition furnace for 150 hours, 100 hours, and 100 hours, respectively, so that the density of the fiber reinforcement reached 1.20 g/cm 3 ;
2)将5公斤铪钽共聚物树脂、1公斤聚碳硅烷和6公斤烯丙基酚醛机械搅拌5小时,静置10小时后,配制成铪钽硅三元复相陶瓷前驱体溶液;2) mechanically stirring 5 kilograms of hafnium-tantalum copolymer resin, 1 kilogram of polycarbosilane and 6 kilograms of allyl phenolic aldehyde for 5 hours, after standing for 10 hours, be mixed with a hafnium-tantalum-silicon ternary composite ceramic precursor solution;
3)将1)获得的纤维增强体浸渍在2)的前驱体溶液中,浸渍条件是:在100KPa的真空度下浸渍2小时,然后在3MPa压强下浸渍2小时。最后,进一步加压至10MPa,升温至150℃下保温2小时,200℃下保温2小时,350℃下保温4小时,使铪钽硅三元复相陶瓷前驱体充分交联固化;3) The fiber reinforcement obtained in 1) was immersed in the precursor solution of 2), and the immersion conditions were as follows: immersion under a vacuum degree of 100KPa for 2 hours, and then immersion under a pressure of 3MPa for 2 hours. Finally, further pressurize to 10MPa, heat up to 150°C for 2 hours, keep at 200°C for 2 hours, and keep at 350°C for 4 hours, so that the hafnium-tantalum-silicon ternary composite ceramic precursor is fully cross-linked and cured;
4)将固化后的碳纤维增强体置于裂解炉中,氩气气氛下,在1600℃下裂解4小时;4) Put the solidified carbon fiber reinforcement in a cracking furnace, under an argon atmosphere, crack at 1600 ° C for 4 hours;
5)重复步骤2)和3)9次,复合材料的密度超过2.2g/cm3,重量增加率小于1%;5) Repeat steps 2) and 3) 9 times, the density of the composite material exceeds 2.2 g/cm 3 , and the weight increase rate is less than 1%;
6)采用化学气相渗透法对步骤(4)得到的复合材料进行封孔处理,在复合材料表层沉积0.1~0.3mm厚的碳化硅涂层;6) sealing pores on the composite material obtained in step (4) by chemical vapor infiltration, and depositing a 0.1-0.3 mm thick silicon carbide coating on the surface of the composite material;
对上述制备的碳/铪钽固溶体-碳化硅复合材料用排水法进行密度测试,测定的密度为2.39g/cm3,复合材料的致密程度较高;The density test of the carbon/hafnium tantalum solid solution-silicon carbide composite material prepared above was carried out by the drainage method, and the measured density was 2.39 g/cm 3 , and the density of the composite material was relatively high;
对上述制备的碳/铪钽固溶体-碳化硅复合材料进行高温力学性能测试,在1600℃下的弯曲强度达到345MPa;The high-temperature mechanical properties of the carbon/hafnium-tantalum solid solution-silicon carbide composites prepared above were tested, and the bending strength at 1600 °C reached 345MPa;
对上述制备的碳/铪钽固溶体-碳化硅复合材料用氧乙炔焰进行耐烧蚀性能测试,在3000℃的高温下烧蚀20s,其线烧蚀率为3.34×10-3mm/s;The carbon/hafnium-tantalum solid solution-silicon carbide composite material prepared above was tested for ablation resistance with an oxyacetylene flame, and the ablation rate was 3.34×10-3mm/s at a high temperature of 3000°C for 20s;
测试结果见表1。The test results are shown in Table 1.
实施例3Example 3
一种碳/铪钽固溶体-碳化硅超高温陶瓷基复合材料的制备方法,其具体步骤是:A preparation method of carbon/hafnium tantalum solid solution-silicon carbide ultra-high temperature ceramic matrix composite material, the specific steps are:
1)将细编穿刺碳纤维增强体在1700℃的高温下处理2小时,然后在气相沉积炉中分别沉积150小时、100小时、100小时,使得纤维增强体的密度达到1.23g/cm3;1) The finely braided punctured carbon fiber reinforcement is treated at a high temperature of 1700 ° C for 2 hours, and then deposited in a vapor deposition furnace for 150 hours, 100 hours and 100 hours respectively, so that the density of the fiber reinforcement reaches 1.23g/cm 3 ;
2)将5公斤铪钽共聚物树脂、1公斤聚碳硅烷和6公斤烯丙基酚醛机械搅拌5小时,静置10小时后,配制成铪钽硅三元复相陶瓷前驱体溶液;2) mechanically stirring 5 kilograms of hafnium-tantalum copolymer resin, 1 kilogram of polycarbosilane and 6 kilograms of allyl phenolic aldehyde for 5 hours, after standing for 10 hours, be mixed with a hafnium-tantalum-silicon ternary composite ceramic precursor solution;
3)将1)获得的纤维增强体浸渍在2)的前驱体溶液中,浸渍条件是:在100KPa的真空度下浸渍2小时,然后在3MPa压强下浸渍2小时。最后,进一步加压至10MPa,并升温至150℃下保温2小时,200℃下保温2小时,350℃下保温4小时,使铪钽硅三元复相陶瓷前驱体充分交联固化;3) The fiber reinforcement obtained in 1) was immersed in the precursor solution of 2), and the immersion conditions were as follows: immersion under a vacuum degree of 100KPa for 2 hours, and then immersion under a pressure of 3MPa for 2 hours. Finally, the pressure was further increased to 10MPa, and the temperature was raised to 150°C for 2 hours, 200°C for 2 hours, and 350°C for 4 hours, so that the hafnium-tantalum-silicon ternary composite ceramic precursor was fully cross-linked and cured;
4)将固化后的碳纤维增强体置于裂解炉中,氩气气氛下,在1600℃下裂解4小时;4) Put the solidified carbon fiber reinforcement in a cracking furnace, under an argon atmosphere, crack at 1600 ° C for 4 hours;
5)重复步骤2)和3)9次,复合材料的密度超过2.2g/cm3,重量增加率小于1%;5) Repeat steps 2) and 3) 9 times, the density of the composite material exceeds 2.2 g/cm 3 , and the weight increase rate is less than 1%;
6)采用化学气相渗透法对步骤(4)得到的复合材料进行封孔处理,在复合材料表层沉积0.1~0.3mm厚的碳化硅涂层;6) sealing pores on the composite material obtained in step (4) by chemical vapor infiltration, and depositing a 0.1-0.3 mm thick silicon carbide coating on the surface of the composite material;
对上述制备的碳/铪钽固溶体-碳化硅复合材料用排水法进行密度测试,测定的密度为2.41g/cm3,复合材料的致密程度较高;The density test of the carbon/hafnium tantalum solid solution-silicon carbide composite material prepared above was carried out by the drainage method, and the measured density was 2.41 g/cm 3 , and the density of the composite material was relatively high;
对上述制备的碳/铪钽固溶体-碳化硅复合材料进行高温力学性能测试,在1600℃下的弯曲强度达到367MPa;The high-temperature mechanical properties of the carbon/hafnium-tantalum solid solution-silicon carbide composites prepared above were tested, and the bending strength at 1600°C reached 367MPa;
对上述制备的碳/铪钽固溶体-碳化硅复合材料用氧乙炔焰进行耐烧蚀性能测试,在3000℃的高温下烧蚀20s,其线烧蚀率为2.60×10-3mm/s;The carbon/hafnium-tantalum solid solution-silicon carbide composite material prepared above was tested for ablation resistance with an oxyacetylene flame, and the ablation rate was 2.60×10-3mm/s at a high temperature of 3000°C for 20s;
测试结果见表1。The test results are shown in Table 1.
此外,传统碳/碳化硅陶瓷基复合材料、碳/碳化锆-碳化硅陶瓷基复合材料在上述测试条件下的结果见表1。In addition, the results of traditional carbon/silicon carbide ceramic matrix composites and carbon/zirconium carbide-silicon carbide ceramic matrix composites under the above test conditions are shown in Table 1.
表1陶瓷基复合材料的性能对比Table 1 Performance comparison of ceramic matrix composites
表1出示了实施例1~3中所制备的碳/铪钽固溶体-碳化硅陶瓷基复合材料与传统的碳/碳化硅及碳/碳化锆-碳化硅陶瓷基复合材料的性能对比,从表中可以看出三种材料在1600℃下的弯曲强度基本相当。但是,传统的碳/碳化硅陶瓷基复合材料的线烧蚀率是碳/铪钽固溶体-碳化硅陶瓷基复合材料的35倍以上,碳/碳化锆-碳化硅陶瓷基复合材料的线烧蚀率是碳/铪钽固溶体-碳化硅陶瓷基复合材料的4.5倍以上,说明碳/铪钽固溶体-碳化硅陶瓷基复合材料比传统的碳/碳化硅及碳/碳化锆-碳化硅陶瓷基复合材料的高温抗氧化耐烧蚀性能有较大的提升。Table 1 shows the performance comparison of the carbon/hafnium tantalum solid solution-silicon carbide ceramic matrix composites prepared in Examples 1 to 3 with traditional carbon/silicon carbide and carbon/zirconium carbide-silicon carbide ceramic matrix composites. It can be seen that the flexural strength of the three materials at 1600 °C is basically the same. However, the line ablation rate of traditional carbon/silicon carbide ceramic matrix composites is more than 35 times that of carbon/hafnium tantalum solid solution-silicon carbide ceramic matrix composites, and the line ablation rate of carbon/zirconium carbide-silicon carbide ceramic matrix composites The rate is more than 4.5 times that of carbon/hafnium tantalum solid solution-silicon carbide ceramic matrix composites, indicating that carbon/hafnium tantalum solid solution-silicon carbide ceramic matrix composites are more efficient than traditional carbon/silicon carbide and carbon/zirconium carbide-silicon carbide ceramic matrix composites. The high temperature oxidation resistance and ablation resistance of the material has been greatly improved.
上述是结合实施例对本发明作详细说明,但是本发明的实施方式并不受上述实施例的限制,其它任何在本发明专利核心指导思想下所作的改变、替换、组合简化等都包含在本发明专利的保护范围之内。The above is a detailed description of the present invention in conjunction with the embodiments, but the embodiments of the present invention are not limited by the above-mentioned embodiments, and any other changes, substitutions, combination simplifications, etc. made under the core guiding ideology of the patent of the present invention are included in the present invention. within the scope of patent protection.
本发明未详细说明部分为本领域技术人员公知的技术。The parts of the present invention that are not described in detail are techniques known to those skilled in the art.
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