CN109935168A - Substrate substrate and preparation method thereof, array substrate and display device - Google Patents

Abstract

The present invention provides a kind of underlay substrate and preparation method thereof, array substrate and display devices, are related to field of display technology.Wherein, underlay substrate includes through-hole, and through-hole is interior along the direction that underlay substrate first surface is directed toward second surface, has been stacked the first insulating layer, conductive metal layer, second insulating layer；Conductive metal layer extends to underlay substrate first surface along through-hole side wall；Second insulating layer is provided with the via hole for extending to conductive metal layer；First surface is opposite with second surface.In the present invention, conductive metal layer on underlay substrate first surface, and the conductive metal layer that underlay substrate second surface side is exposed, it can be respectively used to connection pixel circuit and driving circuit, namely pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate, the two can extend to via hole and the conductive metal layer connection of conductive metal layer by second insulating layer, so, no setting is required, and frame region blocks driving circuit, improves the screen accounting of display device.

Description

Substrate substrate and preparation method thereof, array substrate and display device

technical field

The present invention relates to the field of display technology, in particular to a substrate substrate and a preparation method thereof, an array substrate and a display device.

Background technique

With the continuous advancement of science and technology, visual information plays an increasingly important role in people's lives. Therefore, display devices that carry visual information information, such as TVs, computers, mobile phones, wearable devices, etc., also occupy an important place in people's lives. an increasingly important position. With the continuous development of display technology, people also put forward higher quality requirements for display devices, such as a full screen with a high screen-to-body ratio.

In a conventional display device, the driving circuit and its connection lines are usually arranged in the non-display area around the display area. Therefore, a larger frame area is usually required for shielding, which limits the increase of the screen ratio of the display device.

SUMMARY OF THE INVENTION

The present invention provides a substrate substrate and a preparation method thereof, an array substrate and a display device, which can improve the screen ratio of the existing display device to a certain extent.

In order to solve the above problems, the present invention discloses a base substrate, the base substrate includes a through hole, and the through hole is directed in a direction along the first surface of the base substrate to the second surface of the base substrate , a first insulating layer, a conductive metal layer, and a second insulating layer are stacked; wherein,

the conductive metal layer extends to the first surface of the base substrate along the sidewall of the through hole;

the second insulating layer is provided with vias extending to the conductive metal layer;

The first surface of the base substrate is opposite the second surface of the base substrate.

Optionally, the cross section of the first insulating layer is an inverted trapezoid or a rectangle in the through hole; wherein, the cross section is parallel to the thickness direction of the base substrate.

Optionally, the target angle between the sidewall of the through hole in contact with the conductive metal layer and the thickness direction of the base substrate is less than or equal to 30 degrees.

Optionally, a first thickness ratio between the thickness of the second insulating layer and the thickness of the base substrate is greater than or equal to 5% and less than or equal to 20%.

Optionally, the second thickness ratio between the thickness of the conductive metal layer and the thickness of the base substrate is greater than or equal to 0.1% and less than or equal to 1%.

Optionally, the thickness of the conductive metal layer is greater than or equal to 1 micrometer and less than or equal to 10 micrometers.

Optionally, the thickness of the first insulating layer is less than or equal to the thickness from the first surface of the base substrate to the conductive metal layer;

and / or,

The thickness of the second insulating layer is less than or equal to the thickness from the second surface of the base substrate to the conductive metal layer.

Optionally, the material of the conductive metal layer is at least one of copper, aluminum, silver, and titanium.

Optionally, the material of the first insulating layer and/or the second insulating layer is polysiloxane.

Optionally, the material of the base substrate is silicon, glass or polyimide.

In order to solve the above problems, the present invention also discloses an array substrate, comprising the above-mentioned base substrate, and pixel circuits and driving circuits respectively disposed on the first surface and the second surface opposite to the base substrate; wherein, The pixel circuit and the driving circuit are connected through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer.

In order to solve the above problems, the present invention also discloses a display device, comprising the above array substrate.

In order to solve the above problems, the present invention also discloses a method for preparing a base substrate, comprising:

providing a base substrate;

forming a first blind hole on the first surface of the base substrate;

forming a conductive metal layer on the first surface of the base substrate, the conductive metal layer covering the bottom and at least part of the sidewall of the first blind hole;

forming a first insulating layer on the side of the conductive metal layer located in the first blind hole close to the first surface of the base substrate;

forming a second blind hole on the second surface of the base substrate opposite to the first surface, the first blind hole and the second blind hole form a through hole;

A second insulating layer is formed in the second blind hole, and the second insulating layer is provided with a via hole extending to the conductive metal layer.

Optionally, the forming a second insulating layer in the second blind hole includes:

Filling the second insulating layer in the second blind hole by a solution method;

The second insulating layer is patterned to form vias extending to the conductive metal layer.

Optionally, the forming a conductive metal layer on the first surface of the base substrate includes:

Through a sputtering process or an evaporation process, a conductive metal layer is formed on the first surface of the base substrate, the bottom of the first blind hole and at least part of the sidewall.

Compared with the prior art, the present invention includes the following advantages:

In the embodiment of the present invention, the base substrate includes a through hole, and a first insulating layer, a conductive metal layer, and a second insulating layer are stacked in the through hole along a direction from the first surface of the base substrate to the second surface of the base substrate. wherein, the conductive metal layer extends to the first surface of the base substrate along the sidewall of the through hole; the second insulating layer is provided with a via hole extending to the conductive metal layer; The second surface is opposite. In the embodiment of the present invention, a part of the conductive metal layer on the first surface of the base substrate can be used to connect one of the pixel circuit and the driving circuit, and a part of the conductive metal layer on the second surface of the base substrate passes through the second insulating layer on the side of the second surface of the base substrate. Part of the conductive metal layer exposed at the bottom of the hole can be used to connect the other one of the pixel circuit and the driving circuit, so that the pixel circuit can be prepared on one side of the base substrate, and the driving circuit can be arranged on the other side, and the pixel circuit and the driving circuit can be The connection is made through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer. In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased.

Description of drawings

FIG. 1 shows a schematic cross-sectional view of a base substrate according to an embodiment of the present invention;

FIG. 2 shows a top view of a first surface of a base substrate according to an embodiment of the present invention;

FIG. 3 shows a top view of a second surface of a base substrate according to an embodiment of the present invention;

FIG. 4 shows a flow chart of steps of a method for manufacturing a base substrate according to an embodiment of the present invention;

FIG. 5 shows a schematic diagram of a substrate substrate after forming a first blind hole according to an embodiment of the present invention;

6 shows a schematic diagram of a base substrate after forming a conductive metal layer according to an embodiment of the present invention;

FIG. 7 shows a schematic diagram of a base substrate after forming a first insulating layer according to an embodiment of the present invention;

FIG. 8 shows a schematic diagram of a base substrate after forming a second blind hole according to an embodiment of the present invention;

FIG. 9 shows a schematic diagram of a base substrate after forming a second insulating layer according to an embodiment of the present invention;

FIG. 10 shows a schematic diagram of a base substrate after forming a via hole of the second insulating layer according to an embodiment of the present invention.

Description of reference numbers:

10-substrate, 11-through hole, 12-first insulating layer, 13-conductive metal layer, 14-second insulating layer, 141-via hole, 01-first blind hole, 02-second blind hole.

Detailed ways

In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

Example 1

Referring to FIG. 1 , a schematic cross-sectional view of a base substrate according to Embodiment 1 of the present invention is shown. The base substrate 10 includes a through hole 11 , and the through hole 11 points to the second base substrate along the first surface S1 of the base substrate. In the direction of the surface S2, a first insulating layer 12, a conductive metal layer 13, and a second insulating layer 14 are stacked. The conductive metal layer 13 extends to the first surface S1 of the base substrate 10 along the sidewall of the through hole 10 , that is, the conductive metal layer 13 at least partially covers the first surface S1 of the base substrate 10 ; the second insulating layer 14 A via hole 141 extending to the conductive metal layer 13 is provided so that the conductive metal layer 13 may be exposed from the bottom portion of the via hole 141 ; the first surface S1 of the base substrate 10 faces the second surface S2 of the base substrate 10 . In a specific application, the base substrate 10 may include one or more through holes 11 , which are not specifically limited in this embodiment of the present invention.

In the embodiment of the present invention, a conductive metal layer 13 is formed on the first surface S1 of the base substrate 10 , and this part of the conductive metal layer 13 can be used to connect one of the pixel circuit and the driving circuit. In addition, the conductive metal layer 13 may be exposed from the bottom portion of the via hole 141 of the second insulating layer 14, that is, the conductive metal layer 13 may be exposed to the second surface S2 of the base substrate 10, and this part of the conductive metal layer 13 may be used for The other one of the pixel circuit and the driver circuit is connected, so that the pixel circuit can be prepared on one side of the base substrate 10, the driver circuit can be provided on the other side of the base substrate 10, and the pixel circuit and the driver circuit can be insulated by the second The vias 141 extending to the conductive metal layer 13 in the layer 14 are connected to the conductive metal layer 13 . In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate 10, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased. It should be noted that the driving circuit may specifically be a driving circuit used for display, and certainly may be a driving circuit with other functions, which is not specifically limited in the embodiment of the present invention.

Further, in a specific application, the cross section of the first insulating layer 12 is an inverted trapezoid or a rectangle in the through hole 11 , wherein the cross section is parallel to the thickness direction of the base substrate 10 . For any cross section of the first insulating layer 12 parallel to the thickness direction of the base substrate 10 , it is an inverted trapezoid or a rectangle in the through hole 11 . Correspondingly, the first insulating layer 12 is perpendicular to the base substrate 10 The cross section in the thickness direction is circular in the through hole 11 . When the cross-section of the first insulating layer 12 is an inverted trapezoid in the through hole 11 , that is, the sidewall of the through hole 11 in contact with the conductive metal layer 13 can be inclined, and then the conductive metal layer 13 can be deposited more uniformly subsequently. On the sidewalls of the through holes 11 , the difficulty of forming the conductive metal layer 13 is reduced. Of course, the cross section of the first insulating layer 12 may also be rectangular in the through hole 11 , that is, the side wall of the through hole 11 in contact with the conductive metal layer 13 may be a vertical plane, which is not specified in this embodiment of the present invention. limited.

Specifically, the target angle α between the sidewall of the through hole 11 in contact with the conductive metal layer 13 and the thickness direction of the base substrate 10 is less than or equal to 30 degrees. Referring to FIG. 1 , a target angle α may be formed between the side wall of the through hole 11 in contact with the conductive metal layer 13 and the thickness direction of the base substrate 10 . When the target angle α is greater than 0 degrees, the through hole 11 and the conductive metal layer 13 are in phase with each other. The sidewalls in contact are inclined planes, and the cross-section of the first insulating layer 12 parallel to the thickness direction of the base substrate is an inverted trapezoid in the through hole 11 . When the target angle α is equal to 0 degrees, the through hole 11 and the conductive metal layer 13 are formed. The side walls in contact are vertical planes, and the cross-section of the first insulating layer 12 parallel to the thickness direction of the base substrate is rectangular in the through hole 11 . In a preferred implementation manner, the target angle α between the side wall of the through hole 11 in contact with the conductive metal layer 13 and the thickness direction of the base substrate 10 may be greater than or equal to 10 degrees and less than or equal to 30 degrees, so that It is more favorable for the conductive metal layer 13 to be more uniformly deposited on the sidewall of the through hole.

In practical applications, the first thickness ratio between the thickness of the second insulating layer 14 and the thickness of the base substrate 10 may be greater than or equal to 5% and less than or equal to 20%. Correspondingly, the first insulating layer 12 and the conductive The thickness ratio between the total thickness of the metal layer 13 and the thickness of the base substrate 10 may be greater than or equal to 80% and less than or equal to 95%, that is, the through hole 11 accommodates the first insulating layer 12 and the conductive metal layer 13 . A portion of the depth is relatively deep, while a portion of the through hole 11 that accommodates the second insulating layer 14 is relatively shallow. When the material layers or connecting lines of other devices are arranged on the second surface S2 of the base substrate, it is necessary to make the material layers or connecting lines penetrate deep to the bottom of the via holes 141 of the second insulating layer 14 , and make the material layers or connecting lines of the second insulating layer 14 exposed The conductive metal layer 13 is connected to realize conduction between the devices. Therefore, if the depth of the part where the through hole 11 accommodates the second insulating layer 14 is deep, the material layer or the connecting line on the second surface S2 of the base substrate needs to be relatively deep. The thickness is large, so that it can be connected to the conductive metal layer 13 at the bottom of the via hole 141, and if the depth of the part of the via hole 11 that accommodates the second insulating layer 14 is shallow, it is formed on the second surface S2 of the base substrate. The material layer or the connecting wire can be conductive with the conductive metal layer 13 at the bottom of the via hole 141 , thereby reducing the difficulty of fabrication of subsequent devices.

Further, in practical applications, the inventor found that if the conductive metal layer 13 is completely filled in the through hole 11 of the base substrate 10, the conductive metal layer 13 in the through hole 11 will be used in some subsequent high-temperature processes for preparing pixel circuits. Expansion occurs in the pixel structure and bulges, such as CVD (Chemical Vapor Deposition, chemical vapor deposition) process, annealing process, etc., which will squeeze the film layer in the pixel structure, which will easily cause the film layer in the pixel structure to rupture. , so that the yield of the display device is low.

Based on the above findings, in specific applications, the second thickness ratio between the thickness of the conductive metal layer 13 and the thickness of the base substrate 10 may be greater than or equal to 0.1% and less than or equal to 1%. Since the thickness of the conductive metal layer 13 is only 0.1% to 1% of the thickness of the base substrate, the thickness of the conductive metal layer 13 is much smaller than the thickness of the base substrate 10, that is, the conductive metal layer 13 is in the shape of a sheet, so that the substrate When the substrate 10 undergoes a subsequent high-temperature process, the expansion of the conductive metal layer 13 is small, so that the pixel structure film on the base substrate 10 will not be squeezed. In this way, the pixel structure film is not easily broken, thereby improving the display. device yield. In practical applications, the thickness of the conductive metal layer 13 may be greater than or equal to 1 micrometer and less than or equal to 10 micrometers.

In addition, the thickness of the first insulating layer 12 may be less than or equal to the thickness of the first surface S1 to the conductive metal layer 13 of the base substrate, and/or the thickness of the second insulating layer 14 may be less than or equal to the thickness of the first surface S2 of the base substrate to the thickness of the conductive metal layer 13 . In practical applications, the surface of the first insulating layer 12 may be slightly lower than the first surface S1 of the base substrate 10 , and the surface of the second insulating layer 14 may be slightly lower than the second surface S2 of the base substrate 10 , so that even if conductive The metal layer 13 expands slightly under the high temperature process, and there is also a certain height space between the first insulating layer 12 and the first surface S1 of the base substrate, and between the second insulating layer 14 and the second surface S2 of the base substrate. By performing buffering, the pixel structure film layer disposed on the base substrate 10 can be further prevented from being squeezed.

As shown in FIG. 1 , in an implementation manner, the outer diameter of the side wall of the through hole 11 in contact with the second insulating layer 14 may be smaller than the outer diameter of the side wall of the through hole 11 in contact with the conductive metal layer 13 . In this way, the first The second insulating layer 14 can achieve a larger area of contact with the conductive metal layer 13 while having a thinner thickness, so that the material used for the second insulating layer 14 can be saved. In addition, in a specific application, the center of the first insulating layer 12 , the center of the second insulating layer 14 , and the center of the conductive metal layer portion between the first insulating layer 12 and the second insulating layer 14 may be at the center of the base substrate 10 . overlap in the thickness direction.

FIG. 2 shows a top view of a first surface of a base substrate according to Embodiment 1 of the present invention, and FIG. 3 shows a top view of a second surface of a base substrate according to Embodiment 1 of the present invention, as shown in FIGS. 2 and 3 . As shown, the cross section of the through hole 11 perpendicular to the thickness direction of the base substrate may be circular. Of course, in practical applications, it may also be other shapes such as oval, which are not specifically limited in the embodiment of the present invention.

Further, in a specific application, the material of the conductive metal layer 13 can be at least one of copper, aluminum, silver, and titanium, that is, the material of the conductive metal layer 13 can be a single metal or an alloy. The embodiment does not specifically limit this.

In addition, in practical applications, the material of the first insulating layer 12 and/or the second insulating layer 14 may be polysiloxane, and of course, may also be other organic insulating materials capable of withstanding high temperature processes. There is no specific limitation. It should be noted that the high temperature process mentioned in the embodiments of the present invention may refer to a process with a processing temperature greater than or equal to 200 degrees Celsius. In addition, in a specific application, the material of the first insulating layer 12 and the material of the second insulating layer 14 may be the same or different, which is also not specifically limited in this embodiment of the present invention.

In addition, in the embodiment of the present invention, the material of the base substrate 10 may be silicon, glass or polyimide, which is not specifically limited in the embodiment of the present invention.

It should be noted that the thickness described in each embodiment of the present invention refers to the thickness of each structure along the thickness direction of the base substrate, and the embodiment of the present invention does not specifically limit the thickness of each structure along other directions.

In the embodiment of the present invention, the base substrate includes a through hole, and a first insulating layer, a conductive metal layer, and a second insulating layer are stacked in the through hole along a direction from the first surface of the base substrate to the second surface of the base substrate. wherein, the conductive metal layer extends to the first surface of the base substrate along the sidewall of the through hole; the second insulating layer is provided with a via hole extending to the conductive metal layer; The second surface is opposite. In the embodiment of the present invention, a part of the conductive metal layer on the first surface of the base substrate can be used to connect one of the pixel circuit and the driving circuit, and a part of the conductive metal layer on the second surface of the base substrate passes through the second insulating layer on the side of the second surface of the base substrate. The part of the conductive metal layer exposed at the bottom of the hole can be used to connect the other one of the pixel circuit and the driving circuit, so that the pixel circuit can be prepared on one side of the base substrate, and the driving circuit can be arranged on the other side, and the pixel circuit can pass through the second side. The via hole in the insulating layer extending to the conductive metal layer and the conductive metal layer are connected with the driving circuit. In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased.

Embodiment 2

Referring to FIG. 4 , a flowchart of steps of a method for preparing a base substrate according to Embodiment 2 of the present invention is shown, and the method may include the following steps:

Step 401: Provide a base substrate.

In the embodiment of the present invention, a base substrate 10 may be provided first, and the base substrate 10 may be a silicon wafer substrate substrate, a glass substrate substrate, or a flexible polyimide (PI) substrate substrate. This example is not specifically limited.

Step 402: Form a first blind hole on the first surface of the base substrate.

In the embodiment of the present invention, referring to FIG. 5 , the first blind hole 01 may be formed on the first surface S1 of the base substrate 10 by a drilling method such as laser drilling. The first blind hole 01 may penetrate 80% to 95% of the thickness of the base substrate, and the target angle α between the sidewall of the first blind hole 01 and the thickness direction of the base substrate 10 may be less than or equal to 30 degrees.

Step 403: A conductive metal layer is formed on the first surface of the base substrate, and the conductive metal layer covers the bottom and at least part of the sidewall of the first blind hole.

In this step, a conductive metal layer 13 may be formed on the first surface S1 of the base substrate 10 , the bottom of the first blind hole 01 and at least part of the sidewalls by a sputtering process or an evaporation process, as shown in FIG. 6 . Show. The conductive metal layer 13 may extend from part or all of the sidewalls of the first blind hole 01 to the first surface S1 of the base substrate 10 . Subsequent devices disposed on the first surface S1 of the base substrate may be partially conductive with the conductive metal layer located on the first surface S1. In practical applications, the thickness ratio between the thickness of the conductive metal layer 13 and the thickness of the base substrate 10 may be greater than or equal to 0.1% and less than or equal to 1%. The thickness of the conductive metal layer 13 may be greater than or equal to 1 micrometer and less than or equal to 10 micrometers. The material of the conductive metal layer 13 may be at least one of copper, aluminum, silver, and titanium.

Step 404 : forming a first insulating layer on the side of the conductive metal layer located in the first blind hole close to the first surface of the base substrate.

In this step, referring to FIG. 7 , the first insulating layer 12 may be coated on the conductive metal layer 13 located in the first blind hole 01 by a solution method. The thickness of the first insulating layer 12 may be less than or equal to the thickness difference between the thickness of the first blind hole 01 and the thickness of the conductive metal layer 13 , that is, the surface of the first insulating layer 12 may be lower than the base substrate The first surface S1 of 10, or is flush with the first surface S1.

In addition, in practical applications, the material of the first insulating layer 12 may be an organic insulating material such as polysiloxane that can withstand a high temperature process, which is not specifically limited in the embodiment of the present invention.

Step 405 : forming a second blind hole on the second surface of the base substrate opposite to the first surface, and the first blind hole and the second blind hole form a through hole.

In the embodiment of the present invention, as shown in FIG. 8 , the second blind hole 02 may be formed on the second surface S2 of the base substrate opposite to the first surface S1 of the base substrate by drilling holes such as laser drilling. Wherein, the second blind hole 02 may penetrate 5% to 20% of the thickness of the base substrate. Wherein, the second blind hole 02 can extend to the first blind hole 01, thereby forming a through hole with the first blind hole 01. Correspondingly, the bottom of the second blind hole 02 is the conductive metal layer 13, so the conductive metal layer 13 can exposed from the second blind hole 02 .

Step 406 : forming a second insulating layer in the second blind hole, and the second insulating layer is provided with a via hole extending to the conductive metal layer.

In this step, referring to FIG. 9 , the second insulating layer 14 may be filled in the second blind hole 02 by a solution method, so that the second insulating layer 14 covers the bottom and at least part of the sidewall of the second blind hole 02 , and then As shown in FIG. 10 , the second insulating layer 14 can be patterned to form via holes 141 extending to the conductive metal layer 13 , that is, part of the conductive metal layer 13 at the bottom of the second blind hole 02 can be exposed. The bottom of 141 is the conductive metal layer 13 . Subsequent devices disposed on the second surface S2 of the base substrate can be electrically connected to the conductive metal layer part exposing the via holes 141 of the second insulating layer, so that the devices disposed on the first surface S1 of the base substrate can pass through the second insulating layer. The vias 141 extending to the conductive metal layer 13 in 14 and the conductive metal layer 13 are connected to the devices provided on the second surface S2 of the base substrate.

In practical applications, the thickness of the second insulating layer 14 may be less than or equal to the depth of the second blind hole 02 , that is, the surface of the second insulating layer 14 may be lower than the second surface S2 of the base substrate 10 , or the same as the lining The second surface S2 of the base substrate 10 is flush. In addition, in practical applications, the material of the second insulating layer 14 may also be an organic insulating material such as polysiloxane that can withstand a high temperature process, which is not specifically limited in the embodiment of the present invention.

In practical applications, as shown in FIG. 3 , the cross-section of the via hole 141 of the second insulating layer 14 in the direction perpendicular to the thickness of the base substrate may be circular, or of course other shapes, and the center of the via hole 141 The center of the second blind hole 02 may overlap in the thickness direction of the base substrate, and of course may not overlap, which is not specifically limited in this embodiment of the present invention.

Further, the pixel circuits can be prepared on the first surface S1 of the base substrate 10 , and the driving circuits can be prepared on the second surface S2 of the base substrate 10 . Of course, the first surface S2 of the base substrate 10 can also be prepared Pixel circuits are prepared on the two surfaces S2 , and driving circuits are prepared on the first surface S1 of the base substrate 10 , which are not specifically limited in the embodiment of the present invention.

In the embodiment of the present invention, a base substrate may be provided first, then a first blind hole is formed on the first surface of the base substrate, a conductive metal layer is formed on the first surface of the base substrate, and the conductive metal layer covers the first surface of the base substrate. The bottom and sidewall of a blind hole, then a first insulating layer can be formed on the side of the conductive metal layer located in the first blind hole close to the first surface of the base substrate, and then a first insulating layer can be formed on the side of the base substrate opposite to the first surface A second blind hole is formed on the second surface of the back, the first blind hole and the second blind hole form a through hole, and then a second insulating layer can be formed in the second blind hole, and the second insulating layer is provided with extending to the conductive metal layer. vias. In the embodiment of the present invention, a part of the conductive metal layer on the first surface of the base substrate can be used to connect one of the pixel circuit and the driving circuit, and a part of the conductive metal layer on the second surface of the base substrate passes through the second insulating layer on the side of the second surface of the base substrate. Part of the conductive metal layer exposed at the bottom of the hole can be used to connect the other one of the pixel circuit and the driving circuit, so that the pixel circuit can be prepared on one side of the base substrate, and the driving circuit can be arranged on the other side, and the pixel circuit and the driving circuit can be The connection is made through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer. In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased.

Embodiment 3

An embodiment of the present invention further discloses an array substrate, comprising the above-mentioned base substrate, and a pixel circuit and a driving circuit respectively disposed on a first surface and a second surface opposite to the base substrate; wherein the pixel circuit and the driving circuit are The connection is made through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer.

In the embodiment of the present invention, the array substrate includes a base substrate, the base substrate includes a through hole, and the through hole is provided with a first insulating layer, A conductive metal layer and a second insulating layer; wherein, the conductive metal layer extends to the first surface of the base substrate along the sidewall of the through hole; the second insulating layer is provided with a via hole extending to the conductive metal layer; A surface is opposite the second surface of the base substrate. In the embodiment of the present invention, a part of the conductive metal layer on the first surface of the base substrate can be used to connect one of the pixel circuit and the driving circuit, and a part of the conductive metal layer on the second surface of the base substrate passes through the second insulating layer on the side of the second surface of the base substrate. Part of the conductive metal layer exposed at the bottom of the hole can be used to connect the other one of the pixel circuit and the driving circuit, so that the pixel circuit can be prepared on one side of the base substrate, and the driving circuit can be arranged on the other side, and the pixel circuit and the driving circuit can be The connection is made through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer. In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased.

Embodiment 4

An embodiment of the present invention further discloses a display device, comprising the above-mentioned array substrate.

In the embodiment of the present invention, the display device may be: liquid crystal display panel, electronic paper, OLED (Organic Light-Emitting Diode, organic light emitting diode) panel, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator Any product or component with display function.

In the embodiment of the present invention, the array substrate of the display device includes a base substrate, the base substrate includes a through hole, and the through hole is arranged in a direction along the first surface of the base substrate toward the second surface of the base substrate, and a first an insulating layer, a conductive metal layer, and a second insulating layer; wherein, the conductive metal layer extends to the first surface of the base substrate along the sidewall of the through hole; the second insulating layer is provided with a via hole extending to the conductive metal layer; the substrate The first surface of the substrate is opposite the second surface of the base substrate. In the embodiment of the present invention, a part of the conductive metal layer on the first surface of the base substrate can be used to connect one of the pixel circuit and the driving circuit, and a part of the conductive metal layer on the second surface of the base substrate passes through the second insulating layer on the side of the second surface of the base substrate. Part of the conductive metal layer exposed at the bottom of the hole can be used to connect the other one of the pixel circuit and the driving circuit, so that the pixel circuit can be prepared on one side of the base substrate, and the driving circuit can be arranged on the other side, and the pixel circuit and the driving circuit can be The connection is made through a via hole extending to the conductive metal layer in the second insulating layer and the conductive metal layer. In this way, the pixel circuit and the driving circuit can be respectively disposed on two opposite surfaces of the base substrate, so there is no need to provide a frame area for shielding, so that the frame area of the display device can be reduced, and the screen ratio of the display device can be increased.

For the foregoing method embodiments, for the sake of simple description, they are all expressed as a series of action combinations, but those skilled in the art should know that the present invention is not limited by the described action sequence, because according to the present invention, Certain steps may be performed in other orders or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the various embodiments may be referred to each other.

Finally, it should also be noted that in this document, relational terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply these entities or that there is any such actual relationship or sequence between operations. Furthermore, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article of manufacture or device comprising a list of elements includes not only those elements, but also includes not explicitly listed or other elements inherent to such a process, method, commodity or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in the process, method, article of manufacture, or device that includes the element.

A substrate substrate and a preparation method thereof, an array substrate and a display device provided by the present invention have been described above in detail. In this paper, specific examples are used to illustrate the principles and implementations of the present invention. It is only used to help understand the method of the present invention and its core idea; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific embodiments and application scope. In summary, The contents of this specification should not be construed as limiting the present invention.

Claims (15)

1. The substrate base plate is characterized by comprising a through hole, wherein a first insulating layer, a conductive metal layer and a second insulating layer are stacked in the through hole along the direction from a first surface of the substrate base plate to a second surface of the substrate base plate; wherein,

the conductive metal layer extends to the first surface of the substrate base plate along the side wall of the through hole;

the second insulating layer is provided with a via hole extending to the conductive metal layer;

the first surface of the substrate base plate is opposite to the second surface of the substrate base plate.

2. The substrate base plate of claim 1, wherein a cross section of the first insulating layer is an inverted trapezoid or a rectangle within the through hole; wherein the cross-section is parallel to a thickness direction of the substrate base.

3. The substrate base of claim 2, wherein a target angle between a sidewall of the via in contact with the conductive metal layer and a thickness direction of the substrate base is less than or equal to 30 degrees.

4. The substrate base plate according to claim 1, wherein a first thickness ratio between a thickness of the second insulating layer and a thickness of the substrate base plate is greater than or equal to 5% and less than or equal to 20%.

5. The substrate base plate according to claim 1, wherein a second thickness ratio between the thickness of the conductive metal layer and the thickness of the substrate base plate is greater than or equal to 0.1% and less than or equal to 1%.

6. The substrate of claim 1, wherein the conductive metal layer has a thickness greater than or equal to 1 micron and less than or equal to 10 microns.

7. The substrate base plate of claim 1, wherein a thickness of the first insulating layer is less than or equal to a thickness of the substrate base plate first surface to the conductive metal layer;

and/or the presence of a gas in the gas,

the thickness of the second insulating layer is smaller than or equal to the thickness from the second surface of the substrate base plate to the conductive metal layer.

8. The substrate base plate of claim 1, wherein the material of the conductive metal layer is at least one of copper, aluminum, silver and titanium.

9. The substrate base plate according to claim 1, wherein a material of the first insulating layer and/or the second insulating layer is polysiloxane.

10. The substrate base plate of claim 1, wherein the material of the substrate base plate is silicon, glass, or polyimide.

11. An array substrate, comprising the substrate of any one of claims 1 to 10, and pixel circuits and driving circuits respectively disposed on a first surface and a second surface of the substrate opposite to each other;

the pixel circuit and the driving circuit are connected through the conductive metal layer and a via hole extending from the second insulating layer to the conductive metal layer.

12. A display device comprising the array substrate according to claim 11.

13. A method for preparing a substrate base plate, which is characterized by comprising the following steps:

providing a substrate base plate;

forming a first blind hole on a first surface of the substrate base plate;

forming a conductive metal layer on the first surface of the substrate base plate, wherein the conductive metal layer covers the bottom and at least part of the side wall of the first blind hole;

forming a first insulating layer on one side, close to the first surface of the substrate base plate, of the conductive metal layer in the first blind hole;

forming a second blind hole on a second surface of the substrate base plate opposite to the first surface, wherein the first blind hole and the second blind hole form a through hole;

and forming a second insulating layer in the second blind hole, wherein the second insulating layer is provided with a through hole extending to the conductive metal layer.

14. The method of claim 13, wherein forming a second insulating layer within the second blind via comprises:

filling a second insulating layer in the second blind hole by a solution method;

and patterning the second insulating layer to form a via hole extending to the conductive metal layer.

15. The method of claim 13, wherein forming a conductive metal layer on the first surface of the substrate base plate comprises:

and forming a conductive metal layer on the first surface of the substrate base plate, the bottom of the first blind hole and at least part of the side wall through a sputtering process or an evaporation process.