CN109920893A - A kind of reverse polarity AlGaInP LED chip with good current spreading characteristics and preparation method - Google Patents
A kind of reverse polarity AlGaInP LED chip with good current spreading characteristics and preparation method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000003892 spreading Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000007788 roughening Methods 0.000 claims abstract description 19
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 128
- 238000001579 optical reflectometry Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910005544 NiAg Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 238000003486 chemical etching Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
本发明公开了一种具有良好电流扩展特性的反极性AlGaInP LED芯片及制备方法，该反极性AlGaInP LED芯片从下至上依次包括：基板、键合金属层、P面反射电极、P面电流扩展层、发光层、粗化层、N面欧姆接触层、N面扩展电极和焊盘。本发明的反极性AlGaInP LED芯片的制备方法采用等于或小于N面扩展电极线宽的掩膜版对N面欧姆接触层进行图案化蚀刻，完全去除N面扩展电极两侧具有吸光作用的N面欧姆接触层，先完成粗化腐蚀、腐蚀切割道等化学蚀刻工艺，最后制备N面扩展电极和焊盘，提高产品的光提取效率和良率；并在P面电流扩展层上制备P面反射电极，可以避免遮光的N面扩展电极和焊盘正下方区域不必要的出光，更大程度地提高反极性AlGaInP LED芯片的光提取效率。
The invention discloses a reverse polarity AlGaInP LED chip with good current spreading characteristics and a preparation method. The reverse polarity AlGaInP LED chip comprises, from bottom to top, a substrate, a bonding metal layer, a P surface reflective electrode, a P surface current Extension layer, light-emitting layer, roughening layer, N-face ohmic contact layer, N-face extension electrode and pad. The preparation method of the reverse polarity AlGaInP LED chip of the present invention uses a mask equal to or less than the line width of the N-face extended electrode to pattern-etch the N-face ohmic contact layer, and completely remove the N-face that has a light-absorbing effect on both sides of the N-face extended electrode. For the surface ohmic contact layer, first complete the chemical etching processes such as roughening corrosion and etching cutting lines, and finally prepare the N-surface extension electrodes and pads to improve the light extraction efficiency and yield of the product; and prepare the P-surface reflection on the P-surface current expansion layer. The electrode can avoid unnecessary light extraction in the area directly under the shielded N-surface extension electrode and the pad, and improve the light extraction efficiency of the reverse polarity AlGaInP LED chip to a greater extent.
Description
Technical field
The present invention relates to light emitting diode fields, more particularly, to a kind of reversed polarity with good current expansion characteristic
AlGaInP LED chip and preparation method.
Background technique
The light extraction efficiency of the AlGaInP quaternary system red LED chip of conventional structure is very low, and only 10% or so, it is main
The reason is that: (1) GaAs substrate to visible light have absorption, so that the light of active layer directive substrate and upper surface are reflected
Light absorbed completely by GaAs substrate；(2) chip light-emitting layer is high-index material, and there are losss at total reflection on light-emitting surface
And Fresnel loss.
In order to improve the extraction efficiency of light, by the light emitted downwards and the light inside semiconductor is reflected back from upper surface to the greatest extent may be used
Extracting more than energy, a kind of used method are the addition DBR(distributed Blatt reflectives between GaAs substrate and active area
Mirror) structure, to reduce the light absorption of GaAs substrate, but the reflectivity limited angle of DBR, only to the light close to normal incidence have compared with
High reflectivity, therefore effect is little.
Fig. 1 show the first conventional LED chips structure, from bottom to up successively includes: permanent Si substrate 201, bonding gold
Belong to layer 202, metallic reflector 203, P surface current extension layer 105, multiple quantum well active layer 104, n-AlGaInP roughened layer 103, N
Face ohmic contact layer 102, the face N expansion electrode 204, pad 205.LED chip structure shown in FIG. 1 is with metal substitute DBR work
For reflecting mirror, the incident angle of reflected light is expanded, therefore there is higher light extraction efficiency；Due to the face N ohmic contact layer 102
It is usually that mask plate carries out wet etching with the face N expansion electrode 204, overetched phenomenon is certainly existed, so that the face N be made to extend
The edge of electrode 204 is in vacant state, caused by the result is that: on the one hand, the face the N expansion electrode 204 of overhanging portion is rear
It is continuous to be such as roughened, corrode easy breakage during Cutting Road chemical etching process, cause the irregular of 204 edge of the face N expansion electrode
It is uneven, seriously affect the appearance of chip；On the other hand, the breakage at 204 edge of the face N expansion electrode also easily causes the face N ohm to connect
Falling off for the face N expansion electrode 204 right above contact layer 102, influences Ohmic contact and current expansion between the two, in turn
Cause the reduction of raising and the brightness of positive operating voltage.Above-mentioned these problems have seriously affected the quality of product, reduce production
The yield of product, and pole is unfavorable for the batch production of product.
Fig. 2 show second of conventional LED chips structure, the difference master with the first conventional LED chips structure shown in Fig. 1
Be: its production method is first to complete roughening process, and roughening region does not include the face N to be prepared expansion electrode 204 and pad 205
Then region prepares the face clad type N expansion electrode 204 on the face N ohmic contact layer 102, thick in smooth n-AlGaInP
Change and prepares pad on layer 103.Although expansion electrode 204 cracky in the face N in the first conventional LED chips structure can be improved, taken off
The problem of falling, but cause the bad and current expansion of later product encapsulation uneven still without thorough solution pad 205 is easy to fall off
Even problem, and complex process.
Summary of the invention
The first purpose of this invention is to provide a kind of light extraction efficiency for improving product and yield, is avoided that shading
The face N expansion electrode and the unnecessary light out of pad lower zone more improve the light extraction of reversed polarity AlGaInP LED chip
The reversed polarity AlGaInP LED chip with good current expansion characteristic of efficiency.
Second object of the present invention is to provide a kind of reversed polarity AlGaInP LED with good current expansion characteristic
The preparation method of chip.
The first purpose of this invention is achieved in that
A kind of reversed polarity AlGaInP LED chip with good current expansion characteristic, is characterized in: the reversed polarity AlGaInP
LED chip successively includes: substrate, bonding metal layer, the face P reflecting electrode, P surface current extension layer, luminescent layer, roughening from bottom to up
Layer, the face N ohmic contact layer, the face N expansion electrode and pad；
The face P reflecting electrode includes high light reflectivity metal layer and low refractive index dielectric layer；The high light reflectivity metal layer and institute
The contact of low refractive index dielectric layer is stated, the low refractive index dielectric layer is contacted with the P surface current extension layer, and the low-refraction is situated between
The conductive small structure for having the two compound between matter layer and high light reflectivity metal layer, the face N expansion electrode underface are corresponding low
Index medium layer region does not prepare conductive small structure.
The high light reflectivity metal layer is Ag or Au metal single layer, or appointing for NiAg, NiAu, AuBe or AuZn alloy
It anticipates one or more, with a thickness of 1nm-1000nm.
The low refractive index dielectric layer is SiO2、SiNxOr SiON any one or more, with a thickness of 1nm-1000nm.
The face N expansion electrode is prepared on the ohmic contact layer of the face N, and the area of the face N expansion electrode is greater than or equal to
The area of the face the N ohmic contact layer of contact.
The pad preparation is on the roughened layer after roughening corrosion.
The face N expansion electrode and pad are any one or more of Au, Ge, Ni, and thickness is 100nm-3000nm.
Second object of the present invention is achieved in that
A kind of preparation method of the reversed polarity AlGaInP LED chip with good current expansion characteristic, is characterized in: including following
Step:
(1) epitaxial growth etch stop layers, the face N ohmic contact layer, roughened layer, luminescent layer, the extension of P surface current on temporary substrates
Layer；
(2) face P reflecting electrode is prepared on P surface current extension layer, is prepared bonding metal layer, is bonded with permanent substrate, removing and face
When substrate, removal etch stop layers；
(3) it is less than or equal to the patterned face the N ohmic contact layer of mask plate wet etching of the face N expansion electrode using line width, it will
The removal of most of face N ohmic contact layer, only retains the face the N ohmic contact layer in the face N expansion electrode region to be prepared；
(4) the above-mentioned roughened layer being exposed is corroded using wet process roughening, roughening region does not include the face N expansion electrode to be prepared
Region；
(5) Cutting Road is prepared；
(6) face N expansion electrode and pad are finally prepared, the face N expansion electrode is prepared on area less than or equal to the face N expansion electrode
The face N ohmic contact layer on；Pad is prepared on the roughened layer after roughening corrosion.
Wherein, in step (2) face P reflecting electrode preparation method, comprising the following steps:
A. low refractive index dielectric layer is prepared on P surface current extension layer；
B. photolithography patterning method is utilized, photolithography method is directed at using the face the P reflecting electrode/face N expansion electrode, pad, in conjunction with wet
Method corrosion or dry etch process, by corresponding region immediately below the face N expansion electrode and pad with the low refractive index dielectric of exterior domain
Layer removal completes to avoid the small structure preparation of corresponding region arrangement immediately below the face N expansion electrode and pad；
C. high light reflectivity metal layer is prepared in such a way that electron-beam evaporation mode is deposited or sputters on the basis of step B.
Wherein, the preparation method of the Cutting Road in the step (5) is plasma dry etch or wet etching.
Wherein, the preparation method of the face the N expansion electrode in the step (6) and pad is metal-stripping or wet etching.
The present invention uses the mask plate equal to or less than the face N expansion electrode line width to pattern the face N ohmic contact layer
Etching, completely removes the face the N ohmic contact layer that the face N expansion electrode two sides have absorption effects, first completes roughening burn into corrosion and cuts
It the chemical etching processes such as cuts, finally prepares the face N expansion electrode and pad, so as to improve the light extraction efficiency of product and good
Rate；And low refractive index dielectric layer is introduced avoiding corresponding P surface current extension layer immediately below the face N expansion electrode and pad, it can be with
The face the N expansion electrode and the unnecessary light out of pad lower zone for avoiding shading, improve reversed polarity AlGaInP to a greater degree
The light extraction efficiency of LED chip.
Detailed description of the invention
Fig. 1 is the schematic diagram of the first routine AlGaInP LED chip structure；
Fig. 2 is the schematic diagram of second of routine AlGaInP LED chip structure；
Fig. 3 is the epitaxial structure schematic diagram of AlGaInP LED chip of the invention；
Fig. 4 is manufacturing process schematic cross-section before the roughening of the embodiment of the present invention；
Fig. 5 is manufacturing process schematic cross-section after the roughening of the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of the AlGaInP LED chip of the embodiment of the present invention.
Specific embodiment
Below with reference to embodiment and compares attached drawing invention is further described in detail.
A kind of reversed polarity AlGaInP LED chip with good current expansion characteristic, the reversed polarity AlGaInP LED
Chip successively includes: permanent Si substrate 201, bonding metal layer 202, the face P reflecting electrode, P surface current extension layer from bottom to up
105, luminescent layer, n-AlGaInP roughened layer 103, the face N ohmic contact layer 102, the face N expansion electrode 204 and pad 205.
The face P reflecting electrode includes high light reflectivity metal layer 203 and low refractive index dielectric layer 401, the high light reflectivity
Metal layer 203 is contacted with the low refractive index dielectric layer 401, the low refractive index dielectric layer 401 and the P surface current extension layer
105 contacts, the conductive aperture knot for having the two compound between the low refractive index dielectric layer 401 and high light reflectivity metal layer 203
Structure, corresponding 401 region of low refractive index dielectric layer in 204 underface of the face N expansion electrode do not prepare conductive small structure.
High light reflectivity metal layer 203 is Ag or Au metal single layer, or appointing for NiAg, NiAu, AuBe or AuZn alloy
It anticipates one or more, with a thickness of 1nm-1000nm；Low refractive index dielectric layer 401 is SiO2、SiNxSiON any one or it is more
Kind, with a thickness of 1nm-1000nm.
The face N expansion electrode 204 is prepared on the face N ohmic contact layer 102, and the face N expansion electrode area is greater than or equal to
The area of the face the N ohmic contact layer 102 of contact.
The preparation of pad 205 is on the n-AlGaInP roughened layer 103 after roughening corrosion.
The face N expansion electrode 204 and pad 205 are any one or more of Au, Ge, Ni, and thickness is 100nm-
3000nm。
A kind of preparation method of the reversed polarity AlGaInP LED chip with good current expansion characteristic, including following step
It is rapid:
(1) prepare AlGaInP LED epitaxial material first with conventional MOCVD growing method, as shown in figure 3, with
N-GaInP etch stop layers 101, the face N ohm are successively grown on the temporary substrate GaAs substrate 100 that AlGaInP lattice matches
Contact layer 102, n-AlGaInP roughened layer 103, multiple quantum well active layer 104 and P surface current extension layer 105；
(2) as shown in figure 4, preparing the face P reflecting electrode first on P surface current extension layer 105, the low folding of 1nm-1000nm is first grown
Penetrate rate dielectric layer 401:SiO2Layer, using the mask plate being aligned with the face N expansion electrode 204 and pad 205, in conjunction with wet etching or
Dry etch process only retains the index dielectric layer 401 on the face N expansion electrode 204 and 205 underface corresponding region of pad；
On this basis, the Ag metallic reflector 203 of 1nm-1000nm thickness is deposited, completes the preparation of the face P reflecting electrode；It then will be temporary
When substrate GaAs substrate 100 and permanent Si substrate 201 be bonded together by bonding metal layer 202, recycle wet etching will
Temporary substrate GaAs substrate 100 and n-GaInP etch stop layers 101 remove, using equal to or less than the face N expansion electrode line width
Mask plate, wet etching pattern the face N ohmic contact layer 102, guarantee that expansion electrode 204 two sides in the face N have the face N of absorption effects
Ohmic contact layer 102 is completely removed, and only retains the face the N ohmic contact layer 102 in 204 region of the face N to be prepared expansion electrode；
(3) using the n-AlGaInP roughened layer 103 of coarsening solution roughening corrosion exposure, structure as shown in Figure 5 is obtained；
(4) preparation of the face N expansion electrode 204 and pad 205 is finally prepared, as shown in Figure 6；It is made on the face N ohmic contact layer 102
The standby face N expansion electrode 204, prepares pad 205, pad 205 and n-AlGaInP roughened layer on n-AlGaInP roughened layer 103
103 contact surface is the roughened layer after roughening corrosion, ensure that the adherency of the face N expansion electrode 204 and pad 205 and epitaxial layer
Power, and greatly improve the current expansion uniformity of LED chip；The material of the face N expansion electrode 204 and pad 205 is
AuGeNi, with a thickness of 100nm-3000nm.
Claims (10)
1. a kind of reversed polarity AlGaInP LED chip with good current expansion characteristic, it is characterised in that: the reversed polarity
AlGaInP LED chip successively includes: substrate, bonding metal layer, the face P reflecting electrode, P surface current extension layer, hair from bottom to up
Photosphere, roughened layer, the face N ohmic contact layer, the face N expansion electrode and pad；
The face P reflecting electrode includes high light reflectivity metal layer and low refractive index dielectric layer；The high light reflectivity metal layer and institute
The contact of low refractive index dielectric layer is stated, the low refractive index dielectric layer is contacted with the P surface current extension layer, and the low-refraction is situated between
The conductive small structure for having the two compound between matter layer and high light reflectivity metal layer, the face N expansion electrode underface are corresponding low
Index medium layer region does not prepare conductive small structure；
The area of the face N expansion electrode is greater than or equal to the area of the face the N ohmic contact layer of contact.
2. the reversed polarity AlGaInP LED chip according to claim 1 with good current expansion characteristic, feature exist
In: the high light reflectivity metal layer is Ag or Au metal single layer, or is any one of NiAg, NiAu, AuBe or AuZn alloy
Kind is a variety of, with a thickness of 1nm-1000nm.
3. the reversed polarity AlGaInP LED chip according to claim 1 with good current expansion characteristic, feature exist
In: the low refractive index dielectric layer be SiO2, SiNx or SiON any one or more, with a thickness of 1nm-1000nm.
4. the reversed polarity AlGaInP LED chip according to claim 1 with good current expansion characteristic, feature exist
In: the face N expansion electrode is prepared on the ohmic contact layer of the face N, and the area of the face N expansion electrode is greater than or equal to contact
The area of the face N ohmic contact layer.
5. the reversed polarity AlGaInP LED chip according to claim 1 with good current expansion characteristic, feature exist
In: the pad preparation is on the roughened layer after roughening corrosion.
6. the reversed polarity AlGaInP LED chip according to claim 1 with good current expansion characteristic, feature exist
In any one or more that: the face N expansion electrode and pad are Au, Ge, Ni, thickness is 100nm-3000nm.
7. a kind of preparation method of the reversed polarity AlGaInP LED chip with good current expansion characteristic, it is characterised in that: packet
Include following steps:
(1) epitaxial growth etch stop layers, the face N ohmic contact layer, roughened layer, luminescent layer, the extension of P surface current on temporary substrates
Layer；
(2) face P reflecting electrode is prepared on P surface current extension layer, is prepared bonding metal layer, is bonded with permanent substrate, removing and face
When substrate, removal etch stop layers；
(3) it is less than or equal to the patterned face the N ohmic contact layer of mask plate wet etching of the face N expansion electrode using line width, it will
The removal of most of face N ohmic contact layer, only retains the face the N ohmic contact layer in the face N expansion electrode region to be prepared；
(4) the above-mentioned roughened layer being exposed is corroded using wet process roughening, roughening region does not include the face N expansion electrode to be prepared
Region；
(5) Cutting Road is prepared；
(6) face N expansion electrode and pad are finally prepared, the face N expansion electrode is prepared on area less than or equal to the face N expansion electrode
The face N ohmic contact layer on；Pad is prepared on the roughened layer after roughening corrosion.
8. the preparation side of the reversed polarity AlGaInP LED chip according to claim 7 with good current expansion characteristic
Method, it is characterised in that: the preparation method of the face P reflecting electrode in step (2), comprising the following steps:
A. low refractive index dielectric layer is prepared on P surface current extension layer；
B. photolithography patterning method is utilized, photolithography method is directed at using the face the P reflecting electrode/face N expansion electrode, pad, in conjunction with wet
Method corrosion or dry etch process, by corresponding region immediately below the face N expansion electrode and pad with the low refractive index dielectric of exterior domain
Layer removal completes to avoid the small structure preparation of corresponding region arrangement immediately below the face N expansion electrode and pad；
C. high light reflectivity metal layer is prepared in such a way that electron-beam evaporation mode is deposited or sputters on the basis of step B.
9. the preparation side of the reversed polarity AlGaInP LED chip according to claim 7 with good current expansion characteristic
Method, it is characterised in that: the preparation method of the Cutting Road in the step (5) is plasma dry etch or wet etching.
10. the preparation side of the reversed polarity AlGaInP LED chip according to claim 7 with good current expansion characteristic
Method, it is characterised in that: the preparation method of the face N expansion electrode and pad in the step (6) is metal-stripping or wet etching.
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| CN112786757A (en) * | 2021-02-22 | 2021-05-11 | 江苏大学 | AlGaInP light emitting diode chip structure |
| CN113921677A (en) * | 2021-09-30 | 2022-01-11 | 南昌大学 | Contact structure of AlGaInN light-emitting diode |
| CN114122218A (en) * | 2022-01-24 | 2022-03-01 | 南昌硅基半导体科技有限公司 | A GaN-based LED chip with omnidirectional reflective electrode and preparation method thereof |
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| CN111200045A (en) * | 2020-03-26 | 2020-05-26 | 南昌大学 | A kind of AlGaInP LED chip with independent reflector and P electrode and preparation method thereof |
| CN112786757A (en) * | 2021-02-22 | 2021-05-11 | 江苏大学 | AlGaInP light emitting diode chip structure |
| CN112786757B (en) * | 2021-02-22 | 2021-12-21 | 江苏大学 | A kind of AlGaInP light-emitting diode chip structure |
| CN113921677A (en) * | 2021-09-30 | 2022-01-11 | 南昌大学 | Contact structure of AlGaInN light-emitting diode |
| CN114122218A (en) * | 2022-01-24 | 2022-03-01 | 南昌硅基半导体科技有限公司 | A GaN-based LED chip with omnidirectional reflective electrode and preparation method thereof |
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