CN109913133A - A high-efficiency and high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals - Google Patents
A high-efficiency and high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals Download PDFInfo
- Publication number
- CN109913133A CN109913133A CN201910250862.2A CN201910250862A CN109913133A CN 109913133 A CN109913133 A CN 109913133A CN 201910250862 A CN201910250862 A CN 201910250862A CN 109913133 A CN109913133 A CN 109913133A
- Authority
- CN
- China
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing
- yag crystal
- polishing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 239000013078 crystal Substances 0.000 title claims abstract description 31
- 239000000126 substance Substances 0.000 title claims abstract description 24
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 title 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 title 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012530 fluid Substances 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 14
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 13
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 13
- 235000019795 sodium metasilicate Nutrition 0.000 claims abstract description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000003082 abrasive agent Substances 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000002223 garnet Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 241000219991 Lythraceae Species 0.000 description 1
- 235000014360 Punica granatum Nutrition 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000006854 communication Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- ORVGYTXFUWTWDM-UHFFFAOYSA-N silicic acid;sodium Chemical compound [Na].O[Si](O)(O)O ORVGYTXFUWTWDM-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of high-effect high-quality chemical mechanical polishing liquid of yag crystal, belongs to hard brittle material Ultra-precision Turning field.At room temperature, abrasive material zirconium oxide, sodium metasilicate, magnesia are separately added into deionized water, are shaken 10 minutes in ultrasonic device and obtains chemical mechanical polishing liquid.In the chemical mechanical polishing liquid, zirconium oxide concentration is 0.02~0.12g/ml, and partial size is 0.02~0.20 μm, and the sodium silicate silicate is 0.03~0.15g/ml, and the magnesium oxide concentration is 1~5g/L.Polishing is carried out to yag crystal using polishing fluid of the invention, yag crystal can obtain higher surface quality and polishing material removal rate.
Description
Technical field
The invention belongs to hard brittle material Ultra-precision Turning fields, are related to a kind of matching for the chemical mechanical polishing liquid of crystalline material
System, is related specifically to the preparation of the chemical mechanical polishing liquid of yag crystal.
Background technique
With the development of society, laser has been widely used for the every field such as manufacture, medical treatment, national defence.Yttrium-aluminium-garnet
Crystal becomes most widely used laser crystal since it is with preferable physical and chemical performance.In order to obtain preferable laser
Light beam and biggish laser threshold, the surface of laser chip and sub-surface quality are of crucial importance.Wafer surface
Defect and damage can make laser occur to scatter and lead to local energy accumulating in communication process, substantially reduce laser
Energy.
At present to the processing method of yag crystal mainly use ultra-fine alumina hard grind material carry out mechanical polishing and
Silica solution is chemically-mechanicapolish polished.103059738 A of patent CN uses nitric acid, and water and emulsification corundum mixed liquor are to YAG crystal
It is polished, but since aluminium oxide hardness is high, dislocation, fine scratch and biggish sub-surface damage is easy to produce after crystal pro cessing
Wound, while nitric acid severe corrosion equipment, environmental pollution is larger, and treatment cost of waste liquor is high.108838745 A of patent CN is used
Zirconium oxide chemically-mechanicapolish polishes YAG crystal with sodium hydroxide mixed aqueous solution, but its material removing rate is low, only
1.99nm/min, surface quality could be improved.Therefore, at present traditional polishing fluid there are the problem of include: (1) surface quality
Difference；(2) removal efficiency is low；(3) expensive.CMP process is able to achieve adding for leveling as uniquely a kind of
Work technology, studying novel high-effect high-quality chemical mechanical polishing liquid is the effective way for solving problem above.
Summary of the invention
The problems such as removal rate is low, and quality of finish is limited to is chemically-mechanicapolish polished to solve yag crystal, is invented herein
A kind of novel chemical mechanical polishing liquid, ingredient include deionized water, zirconia grain, sodium metasilicate, magnesia.With patent
108838745 A of CN realizes that material removal is different as corrosive agent using sodium hydroxide, and the present invention is made using sodium metasilicate and magnesia
So that YAG plane of crystal is generated uniform softening layer by the effect of sodium metasilicate and magnesia for chemical reaction reagent, reach
The balance of chemical action and mechanism, polishing performance are significantly larger than its polishing effect, while also much higher than traditional polishing fluid.
The technical solution adopted by the present invention are as follows:
A kind of high-effect high-quality chemical mechanical polishing liquid of yag crystal, at room temperature, by abrasive material zirconium oxide, silicic acid
Sodium, magnesia are separately added into deionized water, are shaken 10 minutes in ultrasonic device and are obtained chemical mechanical polishing liquid.The chemistry machine
In tool polishing fluid, zirconium oxide concentration is 0.02~0.12g/ml, and partial size is 0.02~0.20 μm, and the sodium silicate silicate is
0.03~0.15g/ml, the magnesium oxide concentration are 1~5g/L.
A kind of high-effect high-quality cmp method of yag crystal comprising the steps of:
The first step prepares chemical mechanical polishing liquid；
At room temperature, abrasive material sodium metasilicate, magnesia, zirconia are separately added into deionized water, are shaken in ultrasonic device
It swings 10 minutes and obtains chemical mechanical polishing liquid.
Second step modifies polishing pad using IC1000 polishing pad as polishing pad for chemomechanical polishing；
Third step chemically-mechanicapolish polishes yag crystal, can reach the material removing rate of 34nm/min,
It can get the YAG plane of crystal that surface roughness is 0.0755nm after processing.
Effect and benefit of the present invention is: use new chemical mechanical polishing liquid of the present invention polishing yag crystal, 1)
Compared to traditional polishing fluid, the defects of plane of crystal roughness sharp fall, dislocation, scratch and sub-surface damage, substantially subtracts
It is few；2) material removing rate can achieve 3 times of conventional chemical-mechanical polishing fluid under the conditions of same process；3) the novel polishing liquid at
This is cheap, prepares without special process, and all components not will cause environmental pollution.
Detailed description of the invention
Fig. 1 is that abrasive grain is distributed TEM figure in traditional polishing fluid silica solution；
Fig. 2 is that zirconia grain is distributed TEM figure in novel polishing liquid；
Fig. 3 is the atomic force microscope images on yag crystal surface after traditional silica solution polishing fluid polishing；
Fig. 4 is the atomic force microscope images on yag crystal surface after the polishing of new chemical mechanical polishing liquid；
Fig. 5 is conventional chemical-mechanical polishing fluid and new chemical mechanical polishing liquid polishes removal rate and quality of finish compares.
Specific embodiment
The present invention using improve polishing after yag crystal surface quality and chemically mechanical polishing material removing rate as mesh
, influence of the heterogeneity to polishing effect is probed into, it is final acquired then by the proportion of different component in optimization polishing fluid
The excellent chemical mechanical polishing liquid of energy.Specifically includes the following steps:
1) the determining zirconium oxide for selecting partial size 80nm is as polishing fluid abrasive material, such as Fig. 1 of dispersion particle diameter in the solution institute
Show.As chemical reaction reagent, concentration is respectively 0.05g/ml and 3g/L for sodium metasilicate and magnesia.
2) configuration as polishing fluid 1 and contains 8% zirconium oxide containing 8% oxidation aqueous zirconium, and the mixing of 5% sodium metasilicate is water-soluble
Liquid is as polishing fluid 2.It is polished to polishing fluid 1 and 2 is respectively adopted by the identical pretreated yttrium-aluminium-garnet chip of grinding
Process 2h.Yttrium-aluminium-garnet wafer topography is as shown in Figure 2 after polishing.As can be seen that the yttroalumite pomegranate after the polishing of polishing fluid 2
Stone plane of crystal is smooth, no pit, therefore sodium metasilicate has preferable facilitation to the polishing of yag crystal.
3) concentration for changing the additive magnesia in polishing fluid 2, measures the chemically mechanical polishing of yag crystal
Removal rate.Its measurement result is as shown in Figure 3.As can be seen that magnesia can promote to polish mentioning for removal rate in a certain range
It rises, when concentration is 3g/L, polishes removal rate highest.
4) traditional commerce silica solution polishing fluid, thickness of silica gel 10%, as polishing fluid 3 are prepared.It prepares and contains 0.05g/
The sodium metasilicate of ml, the 80nm zirconium oxide of 0.08g/ml and the magnesium oxide aqueous solution of 3g/L, sonic oscillation 10min, as polishing fluid
4。
2) it selects IC1000 as polishing pad for chemomechanical polishing, polishing pad finishing is carried out by diamond truer.
3) the chemically mechanical polishing test of YAG crystal, polish pressure 0.2Mpa, polishing disk are carried out using polishing fluid 3 and 4
Revolving speed 80r/min polishes flow quantity 7ml/min.
Fig. 4 is the atomic force microscope shape appearance figure after polishing fluid 3 polishes, and Fig. 5 is the atomic force microscopy after polishing fluid 4 polishes
Mirror shape appearance figure.Fig. 5 is the polishing performance data comparison of polishing fluid 3 and 4.
By the above method configure chemical mechanical polishing liquid 4, on IC1000 polishing pad, with defined technological parameter into
Row chemically mechanical polishing experiment, material removing rate 34nm/min can get the YAG that surface roughness is 0.0755nm after processing
Plane of crystal.The process material removing rate is 3 times of conventional chemical-mechanical polishing, while obtaining higher plane of crystal matter
Amount.
Claims (2)
1. a kind of high-effect high-quality chemical mechanical polishing liquid of yag crystal, which is characterized in that at room temperature, by abrasive material oxygen
Change zirconium, sodium metasilicate, magnesia to be separately added into deionized water, ultrasonic vibration obtains chemical mechanical polishing liquid；The chemical machinery
In polishing fluid, zirconium oxide concentration is 0.02~0.12g/ml, and partial size is 0.02~0.20 μm, and the sodium silicate silicate is 0.03
~0.15g/ml, the magnesium oxide concentration are 1~5g/L.
2. the high-effect high-quality chemical mechanical polishing liquid of yag crystal according to claim 1, which is characterized in that
Ultrasonic vibration 10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910250862.2A CN109913133B (en) | 2019-03-29 | 2019-03-29 | Efficient high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910250862.2A CN109913133B (en) | 2019-03-29 | 2019-03-29 | Efficient high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109913133A true CN109913133A (en) | 2019-06-21 |
| CN109913133B CN109913133B (en) | 2020-09-29 |
Family
ID=66967731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910250862.2A Active CN109913133B (en) | 2019-03-29 | 2019-03-29 | Efficient high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109913133B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110358454A (en) * | 2019-07-20 | 2019-10-22 | 大连理工大学 | A kind of general chemistry machine polishing liquor |
| CN113480942A (en) * | 2021-08-06 | 2021-10-08 | 大连理工大学 | Polycrystalline YAG ceramic chemical mechanical polishing solution |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040180612A1 (en) * | 2001-10-24 | 2004-09-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| CN102265339A (en) * | 2008-12-22 | 2011-11-30 | 花王株式会社 | Polishing liquid composition for magnetic-disk substrate |
| CN104400624A (en) * | 2014-10-20 | 2015-03-11 | 南京航空航天大学 | Machining method of solidification abrasive chemical mechanical polished copper |
| CN106479371A (en) * | 2016-08-15 | 2017-03-08 | 惠州市米特仑科技有限公司 | A kind of high precision composite polishing liquid and preparation method thereof |
| CN108559407A (en) * | 2018-06-25 | 2018-09-21 | 安徽全兆光学科技有限公司 | A kind of optics sapphire lapping liquid |
| CN108838745A (en) * | 2018-06-27 | 2018-11-20 | 大连理工大学 | A kind of efficient chemical mechanical polishing method of yag crystal |
-
2019
- 2019-03-29 CN CN201910250862.2A patent/CN109913133B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040180612A1 (en) * | 2001-10-24 | 2004-09-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| CN102265339A (en) * | 2008-12-22 | 2011-11-30 | 花王株式会社 | Polishing liquid composition for magnetic-disk substrate |
| CN104400624A (en) * | 2014-10-20 | 2015-03-11 | 南京航空航天大学 | Machining method of solidification abrasive chemical mechanical polished copper |
| CN106479371A (en) * | 2016-08-15 | 2017-03-08 | 惠州市米特仑科技有限公司 | A kind of high precision composite polishing liquid and preparation method thereof |
| CN108559407A (en) * | 2018-06-25 | 2018-09-21 | 安徽全兆光学科技有限公司 | A kind of optics sapphire lapping liquid |
| CN108838745A (en) * | 2018-06-27 | 2018-11-20 | 大连理工大学 | A kind of efficient chemical mechanical polishing method of yag crystal |
Non-Patent Citations (1)
| Title |
|---|
| DA YIN ET AL.: "《Preparation of MgO doped colloidal SiO2 abrasive and their chemical mechanical polishing performance on c-, r- and a-plane sapphire substrate》", 《CERAMICS INTERNATIONAL》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110358454A (en) * | 2019-07-20 | 2019-10-22 | 大连理工大学 | A kind of general chemistry machine polishing liquor |
| CN113480942A (en) * | 2021-08-06 | 2021-10-08 | 大连理工大学 | Polycrystalline YAG ceramic chemical mechanical polishing solution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109913133B (en) | 2020-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102343547A (en) | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution | |
| CN100579723C (en) | Laser glass mechanical chemical polishing method | |
| CN102516873B (en) | Silicon wafer polishing composition and preparation method thereof | |
| CN103571333B (en) | CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof | |
| JP6223786B2 (en) | Polishing liquid composition for hard and brittle materials | |
| CN1246505A (en) | Polishing composite | |
| CN114231182A (en) | A kind of chemical mechanical polishing process, polishing liquid and preparation method of easily cleavable gallium oxide wafer | |
| CN104835731A (en) | Quick polishing method for large-dimension 4H,6H-SiC wafer | |
| CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
| JP2017530210A (en) | Polishing liquid and method of using the same | |
| CN104181027A (en) | Method for preparing gold metallographic sample and displaying texture of sample | |
| JP2021503170A (en) | Single crystal silicon carbide substrate with high flatness and low damage and large diameter and its manufacturing method | |
| JP2015196704A (en) | Polishing composition and polishing method | |
| CN102372273A (en) | Silica sol with double grain diameters and preparation method thereof | |
| CN109676437A (en) | Silicon carbide wafer and its manufacturing method | |
| CN109913133A (en) | A high-efficiency and high-quality chemical mechanical polishing solution for yttrium aluminum garnet crystals | |
| CN108838745B (en) | A kind of efficient chemical mechanical polishing method of yag crystal | |
| CN115401530A (en) | Shape-controlled flexible polishing method for microarray mold | |
| JP2012248594A (en) | Abrasive | |
| CN108818157A (en) | A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method | |
| JP2000138192A (en) | Regenerating method of semiconductor wafer and abrasive fluid therefor | |
| CN115181498A (en) | Polishing solution for KDP crystal and efficient grinding and polishing process | |
| CN108367410A (en) | The regeneration method of grinding-material slurry | |
| CN108177029B (en) | Ultra-precise polishing method for curved surface workpiece | |
| Feng et al. | Study on the fabrication and grinding performance of the self-sharpening Cr2O3 Gel abrasive tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |