CN109810703A - A room temperature preparation method of CsPbBr3 quantum dots - Google Patents
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 13
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003093 cationic surfactant Substances 0.000 claims abstract description 6
- 239000002798 polar solvent Substances 0.000 claims abstract 4
- 239000000243 solution Substances 0.000 claims description 50
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 26
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 15
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 12
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 9
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 9
- 239000012045 crude solution Substances 0.000 claims description 8
- 239000002244 precipitate Substances 0.000 claims description 8
- QBVXKDJEZKEASM-UHFFFAOYSA-M tetraoctylammonium bromide Chemical compound [Br-].CCCCCCCC[N+](CCCCCCCC)(CCCCCCCC)CCCCCCCC QBVXKDJEZKEASM-UHFFFAOYSA-M 0.000 claims description 8
- 238000005119 centrifugation Methods 0.000 claims description 6
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- VUFOSBDICLTFMS-UHFFFAOYSA-M ethyl-hexadecyl-dimethylazanium;bromide Chemical group [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)CC VUFOSBDICLTFMS-UHFFFAOYSA-M 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims 4
- 238000001556 precipitation Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims 1
- 229940115457 cetyldimethylethylammonium bromide Drugs 0.000 claims 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000003944 tolyl group Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000011261 inert gas Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 3
- 239000005642 Oleic acid Substances 0.000 description 3
- 238000002189 fluorescence spectrum Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XJWSAJYUBXQQDR-UHFFFAOYSA-M dodecyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C)(C)C XJWSAJYUBXQQDR-UHFFFAOYSA-M 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 238000003980 solgel method Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及半导体发光材料制备方法技术领域,尤其是一种CsPbBr3量子点的室温制备方法。The invention relates to the technical field of preparation methods of semiconductor light-emitting materials, in particular to a room temperature preparation method of CsPbBr3 quantum dots.
背景技术Background technique
钙钛矿量子点因为具有较高的电子空穴迁移率、高的发光效率,并且具有吸收光谱宽,发射光谱窄等特点,可以仅通过改变量子点的尺寸,就实现对色彩的调控,使得发光光谱可调,因而在太阳能电池、固态照明以及显示领域有着较高的应用潜力和独特的优势。目前制备钙钛矿量子点的方法应用较多的便是热注入法,能制备出发光效率高的量子点溶液,但同时,也正是因为需要高温加热的条件,同时还需要隔绝空气,使得这一方法难以规模化批量生产,不利于商业化应用。Because perovskite quantum dots have high electron-hole mobility, high luminous efficiency, and have the characteristics of wide absorption spectrum and narrow emission spectrum, the color regulation can be realized only by changing the size of the quantum dots, making the The luminous spectrum is adjustable, so it has high application potential and unique advantages in the fields of solar cells, solid-state lighting and displays. At present, the most widely used method for preparing perovskite quantum dots is the thermal injection method, which can prepare quantum dot solutions with high luminous efficiency. This method is difficult to mass produce on a large scale, which is not conducive to commercial application.
发明内容SUMMARY OF THE INVENTION
本发明的目的是提供一种CsPbBr3量子点的室温制备方法,以解决背景技术中提到的现有技术中量子点的制备需要高温加热的条件,同时还需要隔绝空气的技术问题。The object of the present invention is to provide a room temperature preparation method of CsPbBr3 quantum dots, so as to solve the technical problem that the preparation of quantum dots in the prior art mentioned in the background requires high temperature heating, and also needs to be isolated from air.
为了实现上述目的,本发明提供的一种CsPbBr3量子点的室温制备方法,其制备方法的关键为在溶胶-凝胶法制备量子点的过程中加入阳离子表面活性剂。具体制备方法包括:将碳酸铯和正辛酸按照1∶10的摩尔质量体积比(mmol∶ m1)进行混合,搅拌5-10min,得到铯源溶液。将溴化铅和四辛基溴化铵按照1∶ 2的摩尔质量比溶解在甲苯溶剂中,搅拌5-10min,得到溴化铅溶液。然后取铯源溶液加入到溴化铅溶液中,以溴化铅溶液为基准,体积比为1∶10,搅拌 5-10min。将微量的阳离子表面活性剂如EHDAB(十六烷基二甲基乙基溴化铵) 加入到上述混合溶液中,搅拌2-5min。将上述得到的溶液中加入1-2倍体积的乙酸乙酯,然后对粗液进行洗涤分离提纯,将最终离心得到的沉淀分散在正己烷溶液中保存,获得稳定的CsPbBr3量子点溶液。In order to achieve the above purpose, the present invention provides a method for preparing CsPbBr3 quantum dots at room temperature, the key of which is to add a cationic surfactant in the process of preparing quantum dots by a sol-gel method. The specific preparation method includes: mixing cesium carbonate and n-octanoic acid according to a molar mass volume ratio (mmol: m1) of 1:10, and stirring for 5-10 minutes to obtain a cesium source solution. Dissolve lead bromide and tetraoctyl ammonium bromide in a toluene solvent according to a molar mass ratio of 1: 2, and stir for 5-10 min to obtain a lead bromide solution. Then take the cesium source solution and add it into the lead bromide solution, take the lead bromide solution as the benchmark, the volume ratio is 1:10, and stir for 5-10min. A small amount of cationic surfactant such as EHDAB (hexadecyldimethylethylammonium bromide) is added to the above mixed solution and stirred for 2-5min. Add 1-2 times the volume of ethyl acetate to the solution obtained above, then wash, separate and purify the crude solution, and disperse the precipitate obtained by final centrifugation in n-hexane solution for storage to obtain a stable CsPbBr 3 quantum dot solution.
本发明具有如下有益效果:The present invention has the following beneficial effects:
本发明所提出的CsPbBr3量子点的室温制备方法,不仅不需要高温、惰性气体或者抽真空的保护,而且在极其简单的制备过程中并通过添加表面活性剂即可获得更为稳定易保存的钙钛矿量子点溶液,同时该方法制备出的钙钛矿量子点具有较高的热力学稳定性,保存周期较长,可涂覆在基质衬底上做成LED发光器件,因此在商业化生产上具有较好的应用前景。The room temperature preparation method of CsPbBr3 quantum dots proposed in the present invention not only does not require the protection of high temperature, inert gas or vacuum, but also can obtain calcium that is more stable and easy to store in an extremely simple preparation process and by adding surfactants At the same time, the perovskite quantum dots prepared by this method have high thermodynamic stability and long storage period, and can be coated on the matrix substrate to make LED light-emitting devices, so they are suitable for commercial production. Has good application prospects.
附图说明Description of drawings
图1为实施例1制得的CsPbBr3量子点的荧光发射光谱图;Fig. 1 is the fluorescence emission spectrum of CsPbBr quantum dots obtained in Example 1;
图2为实施例2制得的CsPbBr3量子点的荧光发射光谱图;Fig. 2 is the fluorescence emission spectrum of CsPbBr quantum dots obtained in Example 2;
图3为实施例3制得的CsPbBr3量子点的荧光发射光谱图。FIG. 3 is the fluorescence emission spectrum of the CsPbBr 3 quantum dots prepared in Example 3. FIG.
具体实施方式Detailed ways
下面结合具体实施例对本发明做进一步说明,以助于理解本发明的内容。The present invention will be further described below with reference to specific embodiments to help understand the content of the present invention.
实施例1Example 1
本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:
碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和EHDAB(十六烷基二甲基乙基溴化铵, 98%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and EHDAB (hexadecyldimethylethylammonium bromide, 98%).
按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:
步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.
步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.
步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.
步骤4):将步骤3)制得的溶液中加入0.0377g(0.1mmol)EHDAB。Step 4): 0.0377 g (0.1 mmol) of EHDAB was added to the solution prepared in step 3).
步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.
步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.
以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.
实施例2Example 2
本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:
碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和CTAB(十六烷基三甲基溴化铵,99%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and CTAB (hexadecyltrimethylammonium bromide, 99%).
按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:
步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.
步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.
步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.
步骤4):将步骤3)制得的溶液中加入0.0364g(0.1mmol)CTAB(十六烷基三甲基溴化铵)。Step 4): Add 0.0364 g (0.1 mmol) CTAB (hexadecyltrimethylammonium bromide) to the solution obtained in step 3).
步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.
步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.
以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.
实施例3Example 3
本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:
碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和十烷基三甲基溴化铵(99%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and dodecyltrimethylammonium bromide (99%).
按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:
步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.
步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.
步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.
步骤4):将步骤3)制得的溶液中加入0.0236g(0.1mm01)十烷基三甲基溴化铵。Step 4): Add 0.0236 g (0.1 mm01) of dodecyltrimethylammonium bromide to the solution obtained in step 3).
步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.
步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.
以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.
本文中应用了具体个例对发明构思进行了详细阐述,以上实施例的说明只是用于帮助理解本发明的核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离该发明构思的前提下,所做的任何显而易见的修改、等同替换或其他改进,均应包含在本发明的保护范围之内。Specific examples are used herein to describe the inventive concept in detail, and the descriptions of the above embodiments are only used to help understand the core idea of the present invention. It should be pointed out that for those skilled in the art, any obvious modifications, equivalent replacements or other improvements made without departing from the inventive concept should be included within the protection scope of the present invention.
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Cited By (3)
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CN110718645A (en) * | 2019-09-24 | 2020-01-21 | 华中科技大学 | Preparation method and product of perovskite quantum dot light-emitting diode |
CN111117598A (en) * | 2019-12-19 | 2020-05-08 | 华中科技大学 | ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles |
CN111477746A (en) * | 2020-04-24 | 2020-07-31 | 武汉大学 | A kind of perovskite film with low temperature doping, high photoluminescence quantum yield and preparation method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN110718645A (en) * | 2019-09-24 | 2020-01-21 | 华中科技大学 | Preparation method and product of perovskite quantum dot light-emitting diode |
CN111117598A (en) * | 2019-12-19 | 2020-05-08 | 华中科技大学 | ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles |
CN111477746A (en) * | 2020-04-24 | 2020-07-31 | 武汉大学 | A kind of perovskite film with low temperature doping, high photoluminescence quantum yield and preparation method thereof |
CN111477746B (en) * | 2020-04-24 | 2022-03-04 | 武汉大学 | Low-temperature doped high photoluminescence quantum yield perovskite thin film and preparation method thereof |
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