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CN109810703A - A room temperature preparation method of CsPbBr3 quantum dots - Google Patents

A room temperature preparation method of CsPbBr3 quantum dots Download PDF

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CN109810703A
CN109810703A CN201910162249.5A CN201910162249A CN109810703A CN 109810703 A CN109810703 A CN 109810703A CN 201910162249 A CN201910162249 A CN 201910162249A CN 109810703 A CN109810703 A CN 109810703A
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room temperature
cspbbr
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邹军
曹培源
石明明
杨波波
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Shanghai Institute of Technology
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Abstract

The invention discloses a kind of CsPbBr3The room temperature preparation method of quantum dot, it is related to semiconductive luminescent materials preparation method technical field, this method includes caesium source solution, lead source solution and the polar solvent for being dispersed with cationic surfactant, three kinds of solution is mixed, ethyl acetate is added in the crude liquid of obtained quantum dot to be dispersed, then separating-purifying is carried out, is obtained comprising CsPbBr3The solution of quantum dot.CsPbBr proposed by the invention3The room temperature preparation method of quantum dot; high temperature, inert gas or the protection vacuumized are not needed not only; and it can be obtained more stable perovskite quantum dot solution easy to maintain in extremely simple preparation process and by adding surfactant; the perovskite quantum dot thermodynamic stability with higher that this method is prepared simultaneously; retention cycle is longer; it can be coated in host substrate and be made into LED light emitting device, therefore on commercially producing with good application prospect.

Description

一种CsPbBr3量子点的室温制备方法A room temperature preparation method of CsPbBr3 quantum dots

技术领域technical field

本发明涉及半导体发光材料制备方法技术领域,尤其是一种CsPbBr3量子点的室温制备方法。The invention relates to the technical field of preparation methods of semiconductor light-emitting materials, in particular to a room temperature preparation method of CsPbBr3 quantum dots.

背景技术Background technique

钙钛矿量子点因为具有较高的电子空穴迁移率、高的发光效率,并且具有吸收光谱宽,发射光谱窄等特点,可以仅通过改变量子点的尺寸,就实现对色彩的调控,使得发光光谱可调,因而在太阳能电池、固态照明以及显示领域有着较高的应用潜力和独特的优势。目前制备钙钛矿量子点的方法应用较多的便是热注入法,能制备出发光效率高的量子点溶液,但同时,也正是因为需要高温加热的条件,同时还需要隔绝空气,使得这一方法难以规模化批量生产,不利于商业化应用。Because perovskite quantum dots have high electron-hole mobility, high luminous efficiency, and have the characteristics of wide absorption spectrum and narrow emission spectrum, the color regulation can be realized only by changing the size of the quantum dots, making the The luminous spectrum is adjustable, so it has high application potential and unique advantages in the fields of solar cells, solid-state lighting and displays. At present, the most widely used method for preparing perovskite quantum dots is the thermal injection method, which can prepare quantum dot solutions with high luminous efficiency. This method is difficult to mass produce on a large scale, which is not conducive to commercial application.

发明内容SUMMARY OF THE INVENTION

本发明的目的是提供一种CsPbBr3量子点的室温制备方法,以解决背景技术中提到的现有技术中量子点的制备需要高温加热的条件,同时还需要隔绝空气的技术问题。The object of the present invention is to provide a room temperature preparation method of CsPbBr3 quantum dots, so as to solve the technical problem that the preparation of quantum dots in the prior art mentioned in the background requires high temperature heating, and also needs to be isolated from air.

为了实现上述目的,本发明提供的一种CsPbBr3量子点的室温制备方法,其制备方法的关键为在溶胶-凝胶法制备量子点的过程中加入阳离子表面活性剂。具体制备方法包括:将碳酸铯和正辛酸按照1∶10的摩尔质量体积比(mmol∶ m1)进行混合,搅拌5-10min,得到铯源溶液。将溴化铅和四辛基溴化铵按照1∶ 2的摩尔质量比溶解在甲苯溶剂中,搅拌5-10min,得到溴化铅溶液。然后取铯源溶液加入到溴化铅溶液中,以溴化铅溶液为基准,体积比为1∶10,搅拌 5-10min。将微量的阳离子表面活性剂如EHDAB(十六烷基二甲基乙基溴化铵) 加入到上述混合溶液中,搅拌2-5min。将上述得到的溶液中加入1-2倍体积的乙酸乙酯,然后对粗液进行洗涤分离提纯,将最终离心得到的沉淀分散在正己烷溶液中保存,获得稳定的CsPbBr3量子点溶液。In order to achieve the above purpose, the present invention provides a method for preparing CsPbBr3 quantum dots at room temperature, the key of which is to add a cationic surfactant in the process of preparing quantum dots by a sol-gel method. The specific preparation method includes: mixing cesium carbonate and n-octanoic acid according to a molar mass volume ratio (mmol: m1) of 1:10, and stirring for 5-10 minutes to obtain a cesium source solution. Dissolve lead bromide and tetraoctyl ammonium bromide in a toluene solvent according to a molar mass ratio of 1: 2, and stir for 5-10 min to obtain a lead bromide solution. Then take the cesium source solution and add it into the lead bromide solution, take the lead bromide solution as the benchmark, the volume ratio is 1:10, and stir for 5-10min. A small amount of cationic surfactant such as EHDAB (hexadecyldimethylethylammonium bromide) is added to the above mixed solution and stirred for 2-5min. Add 1-2 times the volume of ethyl acetate to the solution obtained above, then wash, separate and purify the crude solution, and disperse the precipitate obtained by final centrifugation in n-hexane solution for storage to obtain a stable CsPbBr 3 quantum dot solution.

本发明具有如下有益效果:The present invention has the following beneficial effects:

本发明所提出的CsPbBr3量子点的室温制备方法,不仅不需要高温、惰性气体或者抽真空的保护,而且在极其简单的制备过程中并通过添加表面活性剂即可获得更为稳定易保存的钙钛矿量子点溶液,同时该方法制备出的钙钛矿量子点具有较高的热力学稳定性,保存周期较长,可涂覆在基质衬底上做成LED发光器件,因此在商业化生产上具有较好的应用前景。The room temperature preparation method of CsPbBr3 quantum dots proposed in the present invention not only does not require the protection of high temperature, inert gas or vacuum, but also can obtain calcium that is more stable and easy to store in an extremely simple preparation process and by adding surfactants At the same time, the perovskite quantum dots prepared by this method have high thermodynamic stability and long storage period, and can be coated on the matrix substrate to make LED light-emitting devices, so they are suitable for commercial production. Has good application prospects.

附图说明Description of drawings

图1为实施例1制得的CsPbBr3量子点的荧光发射光谱图;Fig. 1 is the fluorescence emission spectrum of CsPbBr quantum dots obtained in Example 1;

图2为实施例2制得的CsPbBr3量子点的荧光发射光谱图;Fig. 2 is the fluorescence emission spectrum of CsPbBr quantum dots obtained in Example 2;

图3为实施例3制得的CsPbBr3量子点的荧光发射光谱图。FIG. 3 is the fluorescence emission spectrum of the CsPbBr 3 quantum dots prepared in Example 3. FIG.

具体实施方式Detailed ways

下面结合具体实施例对本发明做进一步说明,以助于理解本发明的内容。The present invention will be further described below with reference to specific embodiments to help understand the content of the present invention.

实施例1Example 1

本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:

碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和EHDAB(十六烷基二甲基乙基溴化铵, 98%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and EHDAB (hexadecyldimethylethylammonium bromide, 98%).

按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:

步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.

步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.

步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.

步骤4):将步骤3)制得的溶液中加入0.0377g(0.1mmol)EHDAB。Step 4): 0.0377 g (0.1 mmol) of EHDAB was added to the solution prepared in step 3).

步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.

步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.

以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.

实施例2Example 2

本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:

碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和CTAB(十六烷基三甲基溴化铵,99%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and CTAB (hexadecyltrimethylammonium bromide, 99%).

按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:

步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.

步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.

步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.

步骤4):将步骤3)制得的溶液中加入0.0364g(0.1mmol)CTAB(十六烷基三甲基溴化铵)。Step 4): Add 0.0364 g (0.1 mmol) CTAB (hexadecyltrimethylammonium bromide) to the solution obtained in step 3).

步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.

步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.

以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.

实施例3Example 3

本发明以下实例所用的原料纯度如下:The raw material purity used in following example of the present invention is as follows:

碳酸铯(99%)、溴化铅(99%)、油酸(90%)、十八烯(90%)、正己烷(97%)、四辛基溴化铵(98%)、正辛酸(99%)和十烷基三甲基溴化铵(99%)。Cesium carbonate (99%), lead bromide (99%), oleic acid (90%), octadecene (90%), n-hexane (97%), tetraoctylammonium bromide (98%), n-octanoic acid (99%) and dodecyltrimethylammonium bromide (99%).

按如下方法室温制备CsPbBr3量子点:CsPbBr3 quantum dots were prepared at room temperature as follows:

步骤1):将0.326g(1mmol)碳酸铯和10ml正辛酸混合加入到玻璃烧杯中,在室温下搅拌10min,得到铯的前驱体溶液。Step 1): Mix 0.326 g (1 mmol) of cesium carbonate and 10 ml of n-octanoic acid into a glass beaker, and stir at room temperature for 10 min to obtain a precursor solution of cesium.

步骤2):将0.367g(1mmol)溴化铅与1.093g(2mmol)四辛基溴化铵溶解在5ml甲苯中,搅拌5min,得到铅源溶液。Step 2): Dissolve 0.367 g (1 mmol) of lead bromide and 1.093 g (2 mmol) of tetraoctyl ammonium bromide in 5 ml of toluene, and stir for 5 min to obtain a lead source solution.

步骤3):取步骤1)制备好的铯源溶液0.5ml,加入到步骤2)制备的铅源溶液中,搅拌5min。Step 3): take 0.5 ml of the cesium source solution prepared in step 1), add it to the lead source solution prepared in step 2), and stir for 5 min.

步骤4):将步骤3)制得的溶液中加入0.0236g(0.1mm01)十烷基三甲基溴化铵。Step 4): Add 0.0236 g (0.1 mm01) of dodecyltrimethylammonium bromide to the solution obtained in step 3).

步骤5):将步骤4)制备的粗液中加入等体积的乙酸乙酯加以分散。Step 5): add equal volume of ethyl acetate to the crude solution prepared in step 4) for dispersion.

步骤6):将步骤5)的溶液以5000rpm的速率离心5min,然后收集离心分离出的沉淀,分散在正己烷溶液中,再次在5000rpm转速下离心5min,收集沉淀,分散在正己烷中,得到量子点溶液。Step 6): centrifuge the solution of step 5) at 5000rpm for 5min, then collect the precipitate separated by centrifugation, disperse in n-hexane solution, centrifuge again at 5000rpm for 5min, collect the precipitate, disperse in n-hexane to obtain Quantum dot solution.

以上制备过程的所有步骤均在室温下进行,且不需要惰性气体或抽真空保护。All steps of the above preparation process are carried out at room temperature and do not require inert gas or vacuum protection.

本文中应用了具体个例对发明构思进行了详细阐述,以上实施例的说明只是用于帮助理解本发明的核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离该发明构思的前提下,所做的任何显而易见的修改、等同替换或其他改进,均应包含在本发明的保护范围之内。Specific examples are used herein to describe the inventive concept in detail, and the descriptions of the above embodiments are only used to help understand the core idea of the present invention. It should be pointed out that for those skilled in the art, any obvious modifications, equivalent replacements or other improvements made without departing from the inventive concept should be included within the protection scope of the present invention.

Claims (9)

1.一种CsPbBr3量子点的室温制备方法,其特征在于:提供铯源溶液、铅源溶液和分散有阳离子表面活性剂的极性溶剂,将所述三种溶液进行混合,将得到的量子点的粗液加入乙酸乙酯加以分散,然后进行分离提纯,得到包含CsPbBr3量子点的溶液。1. a CsPbBr Quantum dot preparation method at room temperature, is characterized in that: provide cesium source solution, lead source solution and the polar solvent dispersed with cationic surfactant, described three kinds of solutions are mixed, the quantum The crude solution of the dots was added to ethyl acetate for dispersion, and then separated and purified to obtain a solution containing CsPbBr 3 quantum dots. 2.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:所述铯源溶液为:将碳酸铯和正辛酸混合,不用隔绝空气,在室温下搅拌至少5min,使得碳酸铯完全溶解,得到铯源溶液。2. CsPbBr according to claim 1 The room temperature preparation method of quantum dot is characterized in that: described cesium source solution is: cesium carbonate and n-octanoic acid are mixed, do not need to isolate air, stir at least 5min at room temperature, make cesium carbonate Completely dissolved to obtain a cesium source solution. 3.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:所述铅源溶液为:将溴化铅和四辛基溴化铵同时溶解在甲苯溶液中,不用隔绝空气,在室温下搅拌至少5min,使得溴化铅完全溶解,得到铅源溶液。3. the room temperature preparation method of CsPbBr quantum dots according to claim 1, is characterized in that: described lead source solution is: lead bromide and tetraoctyl ammonium bromide are dissolved in toluene solution simultaneously, do not need to isolate air , stirring at room temperature for at least 5min, so that the lead bromide is completely dissolved, and the lead source solution is obtained. 4.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:所述阳离子表面活性剂为十六烷基二甲基乙基溴化铵、十烷基三甲基溴化铵或十六烷基三甲基溴化铵。4. the room temperature preparation method of CsPbBr quantum dots according to claim 1, is characterized in that: described cationic surfactant is cetyl dimethyl ethyl ammonium bromide, dodecyl trimethyl bromide ammonium or cetyltrimethylammonium bromide. 5.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:所述极性溶剂为甲苯。5. The room temperature preparation method of CsPbBr quantum dots according to claim 1, wherein the polar solvent is toluene. 6.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:将所述三种溶液进行混合包含的操作为:先将铯源溶液注入到铅源溶液中,在室温下搅拌5-10min,然后加入分散有阳离子表面活性剂的极性溶剂,得到包含量子点的粗液。6. the room temperature preparation method of CsPbBr quantum dots according to claim 1, is characterized in that: the operation that described three kinds of solutions are mixed comprises: firstly inject cesium source solution into lead source solution, at room temperature Stir for 5-10 min, and then add a polar solvent dispersed with a cationic surfactant to obtain a crude solution containing quantum dots. 7.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:加入乙酸乙酯加以分散的步骤包含如下操作:在得到的量子点的粗液中加入1-2倍体积的乙酸乙酯,对粗液加以分散。7. the room temperature preparation method of CsPbBr quantum dots according to claim 1 is characterized in that: the step of adding ethyl acetate and dispersing comprises the following operations: in the crude solution of obtained quantum dots, add 1-2 times the volume of Ethyl acetate to disperse the crude solution. 8.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:分离提纯步骤包含:将上述分散后的溶液以最少5000rpm的速率离心最少5min,收集离心分离出的沉淀,分散到正己烷溶液中,以同样的速率进行离心提纯,将离心所得沉淀再次分散于正己烷中进行离心提纯。8. the room temperature preparation method of CsPbBr quantum dots according to claim 1, is characterized in that: the separation and purification step comprises: the solution after the above-mentioned dispersion is at least 5min at least at the speed of 5000rpm centrifugation, collects the precipitation of centrifugal separation, disperses In the n-hexane solution, centrifugal purification is carried out at the same speed, and the precipitate obtained by centrifugation is again dispersed in n-hexane for centrifugal purification. 9.根据权利要求1所述的CsPbBr3量子点的室温制备方法,其特征在于:得到的包含CsPbBr3量子点的溶液包含的成分为:离心提纯后得到的最终沉淀,分散保存在正己烷溶液中,得到包含CsPbBr3量子点的溶液。9. the room temperature preparation method of CsPbBr quantum dots according to claim 1, is characterized in that: the composition that the solution that obtains comprises CsPbBr quantum dots comprises is: the final precipitation obtained after centrifugal purification, dispersed and preserved in n-hexane solution , a solution containing CsPbBr quantum dots was obtained.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718645A (en) * 2019-09-24 2020-01-21 华中科技大学 Preparation method and product of perovskite quantum dot light-emitting diode
CN111117598A (en) * 2019-12-19 2020-05-08 华中科技大学 ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles
CN111477746A (en) * 2020-04-24 2020-07-31 武汉大学 A kind of perovskite film with low temperature doping, high photoluminescence quantum yield and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105331362A (en) * 2015-12-07 2016-02-17 南京理工大学 High-yield preparing method for inorganic halogen perovskite fluorescent quantum dots at room temperature
CN108793234A (en) * 2018-06-11 2018-11-13 南京理工大学 A kind of CsPbX3Quantum dot room temperature synthetic method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105331362A (en) * 2015-12-07 2016-02-17 南京理工大学 High-yield preparing method for inorganic halogen perovskite fluorescent quantum dots at room temperature
CN108793234A (en) * 2018-06-11 2018-11-13 南京理工大学 A kind of CsPbX3Quantum dot room temperature synthetic method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718645A (en) * 2019-09-24 2020-01-21 华中科技大学 Preparation method and product of perovskite quantum dot light-emitting diode
CN111117598A (en) * 2019-12-19 2020-05-08 华中科技大学 ABX based on room temperature methodnY3-nLigand regulation method and application of perovskite nano particles
CN111477746A (en) * 2020-04-24 2020-07-31 武汉大学 A kind of perovskite film with low temperature doping, high photoluminescence quantum yield and preparation method thereof
CN111477746B (en) * 2020-04-24 2022-03-04 武汉大学 Low-temperature doped high photoluminescence quantum yield perovskite thin film and preparation method thereof

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