CN109809709B - Deplating liquid and method for removing NCVM (non-volatile memory) from 2D sapphire glass - Google Patents
Deplating liquid and method for removing NCVM (non-volatile memory) from 2D sapphire glass Download PDFInfo
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- CN109809709B CN109809709B CN201711173806.0A CN201711173806A CN109809709B CN 109809709 B CN109809709 B CN 109809709B CN 201711173806 A CN201711173806 A CN 201711173806A CN 109809709 B CN109809709 B CN 109809709B
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- deplating
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- 238000000034 method Methods 0.000 claims abstract description 30
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 18
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
- 239000010980 sapphire Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- LXAHHHIGZXPRKQ-UHFFFAOYSA-N 5-fluoro-2-methylpyridine Chemical compound CC1=CC=C(F)C=N1 LXAHHHIGZXPRKQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 abstract description 8
- 238000009713 electroplating Methods 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract description 5
- 238000007639 printing Methods 0.000 abstract description 5
- 230000002378 acidificating effect Effects 0.000 abstract description 4
- 150000003839 salts Chemical class 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 4
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- -1 1% by mass of JFC Chemical compound 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 238000009990 desizing Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000008233 hard water Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011536 re-plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- Detergent Compositions (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses a deplating solution which comprises ammonium fluoride, ammonium bifluoride, EDTA disodium and JFC, wherein the mass of the ammonium fluoride is 45-65% of that of the deplating solution, the mass of the ammonium bifluoride is 3-8% of that of the deplating solution, the mass of the EDTA disodium is 1-3% of that of the deplating solution, and the mass of the JFC is 0.5-5% of that of the deplating solution. In addition, the embodiment of the invention also discloses a method for removing NCVM from 2D sapphire glass, which comprises the following steps: step 1, deplating the product by adopting the deplating solution; and 2, cleaning the deplated product. The NCVM sample is subjected to stripping electroplating by adopting the stripping solution comprising ammonium fluoride, ammonium bifluoride, EDTA disodium and JFC, and the ammonium fluoride and the ammonium bifluoride which mainly play a stripping role in the stripping solution are strong acid and weak base salts and are acidic, so that the damage of the strong alkaline stripping solution to the printing ink of silk screen printing can be solved, and the quality of a stripping product is improved.
Description
Technical Field
The invention relates to the technical field of 3D (three-dimensional) bonding, in particular to a deplating solution and a method for removing NCVM (non-volatile memory) from 2D sapphire glass.
Background
As a functional finishing technology, the electroplating technology has the characteristics of excellent wear resistance, corrosion resistance, coating thickness uniformity, high density and the like, and is widely applied to electronic products. With the rapid development of the electronic industry, the demand for the electroplating technology is higher and higher, and new technologies, new products and new processes are in endless numbers.
With the progress of society, 2D sapphire glass has been applied to electronic products, and is a fashion, also is a symbol of identity, and 2D sapphire glass has advantages such as frivolous, transparent clean, acid and alkali-resistance, scratch resistance, weatherability. The product can cause such problems in the cleaning and electroplating processes, such as: for improving the productivity and reducing the production cost, it is necessary to remove the plating layer and re-plate the defective products. The existing deplating liquid is strong alkaline and can damage the printing ink after silk-screen printing in the deplating process.
NCVM is also called discontinuous coating technique or non-conductive plating technique, and is a high and new technique related to ordinary vacuum plating, which means that a metal material is organically converted by specific means such as chemistry and physics under a vacuum condition, so that the metal is converted into particles, deposited or adsorbed on the surface of a plastic material to form a film, and becomes a coating film. Vacuum Non-conductive plating, also known as NCVM, is an abbreviation for Non-conductive vacuum metallization in English. The processing technology is higher than that of the common vacuum plating, and the processing process is more complicated than the common process.
Disclosure of Invention
The invention aims to provide a deplating solution and a method for removing NCVM (non-volatile memory) from 2D sapphire glass, which have the advantages of simple structure and convenience in operation, and can effectively solve the problems of low laminating efficiency, high cost, poor practicability and the like of the conventional 3D glass film.
In order to solve the technical problems, the embodiment of the invention provides a deplating solution, which comprises 45-65% by mass of ammonium fluoride, 3-8% by mass of ammonium bifluoride, 1-3% by mass of disodium EDTA and 0.5-5% by mass of JFC.
In addition, the embodiment of the invention also provides a method for removing the NCVM from the 2D sapphire glass, which comprises the following steps:
step 1, deplating the product by adopting the deplating solution;
and 2, cleaning the deplated product.
Wherein the step 1 comprises:
the time for deplating the product by adopting the deplating liquid is 10-20 min.
Compared with the prior art, the deplating solution and the method for removing the NCVM from the 2D sapphire glass provided by the embodiment of the invention have the following advantages:
the embodiment of the invention provides a deplating solution and a method for removing NCVM (non-volatile memory) from 2D sapphire glass, wherein the deplating solution comprising ammonium fluoride, ammonium bifluoride, EDTA disodium and JFC is adopted to perform deplating electroplating on an NCVM sample, and the ammonium fluoride and the ammonium bifluoride which mainly play a deplating role in the deplating solution are strong acid and weak base salt and are acidic, so that the damage of the strong alkaline deplating solution to the printing ink of silk screen printing can be solved, and the quality of deplating products is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic flowchart illustrating steps of a method for removing NCVM from 2D sapphire glass according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic flowchart illustrating a specific implementation manner of a method for removing an NCVM from a 2D sapphire glass according to an embodiment of the present invention.
In one embodiment, the deplating solution comprises ammonium fluoride, ammonium bifluoride, disodium EDTA, and JFC.
In the deplating solution, ammonium fluoride plays a main deplating role as a main medicine, ammonium bifluoride is used for assisting in strengthening the deplating effect of the ammonium fluoride, EDTA disodium is used for complexing for displaying the deplating process, and JFC is used for removing oil and penetrating to remove dirt on the surface of an object. In the present invention, deionized water is left in addition to the above-mentioned materials.
Because ammonium fluoride is the main deplating component in deplating, the content of the ammonium fluoride is the highest, and the mass of the ammonium fluoride is generally 45-65% of that of the deplating solution.
The ammonium bifluoride has the function of further enhancing the detoxification function of the ammonium fluoride, namely the ammonium bifluoride is used as an auxiliary agent for enhancing the main deplating agent, and the mass of the ammonium bifluoride is generally 3-8% of that of the deplating solution.
The EDTA disodium is used for generating complexation and playing a role of an indicator, and the mass of the EDTA disodium is 1% -3% of that of the stripping solution.
JFC is acid-base resistant, hard water resistant, good in water solubility, high in permeation and wetting performance, and simultaneously has emulsification, dispersion and cleaning performance, is used as a penetrant in textile printing and dyeing industry, can be used for sizing, desizing, scouring and bleaching, wool carbonization, is suitable for a resin finishing auxiliary agent, is used as a penetrant and a degreasing agent in leather industry, is used as a wetting agent in a metal detergent to enable oil stains to be easily separated from the metal surface, and has a certain emulsification cleaning effect, the effects of degreasing and permeation are needed to be achieved in the invention, the quality of the JFC is generally 0.5-5% of that of the deplating solution, and a user can increase and decrease the dosage according to the actual damage condition of a product.
In one embodiment of the present invention, the deplating solution comprises 50% by mass of ammonium fluoride, 5% by mass of ammonium bifluoride, 1% by mass of disodium EDTA, 1% by mass of JFC, and deionized water.
In addition, the embodiment of the invention also provides a method for removing the NCVM from the 2D sapphire glass, which comprises the following steps:
step 1, deplating the product by adopting the deplating solution;
and 2, cleaning the deplated product.
The NCVM sample is subjected to stripping electroplating by adopting the stripping solution comprising ammonium fluoride, ammonium bifluoride, EDTA disodium and JFC, and the ammonium fluoride and the ammonium bifluoride which mainly play a stripping role in the stripping solution are strong acid and weak base salts and are acidic, so that the damage of the strong alkaline stripping solution to the printing ink of silk screen printing can be solved, and the quality of a stripping product is improved.
The deplating time of the deplating solution is not limited, and generally, the step 1 comprises the following steps:
the time for deplating the product by adopting the deplating liquid is 10-20 min.
It should be noted that the specific cleaning process of the present invention is not limited, the cleaning process may be performed by a method of deplating or spraying the product, the deplating process may be performed by placing the product in the deplating solution, or other methods may be performed.
In an embodiment of the present invention, the step 2 includes:
and cleaning the deplated product by adopting an alkaline cleaning agent.
The alkaline cleaning agent adopted by the invention can not damage the screen printing ink, the screen printing ink is alkali-resistant ink, and the performance of the screen printing ink is not influenced within 10min at the temperature of 60-70 ℃ by adopting low-concentration alkali.
Because the product is cleaned instead of deplating, the product is not damaged, and the specific alkaline cleaning agent is not limited by the invention.
The method for removing NCVM from 2D sapphire glass is mainly suitable for removing the coating films of niobium pentoxide, titanium oxide, silicon oxide and indium oxide.
After the deplating and cleaning are completed in the above manner, visual inspection is required, and if no damage is found, the next step of re-plating can be performed.
In summary, embodiments of the present invention provide a deplating solution and a method for deplating an NCVM from a 2D sapphire glass, in which a deplating solution including ammonium fluoride, ammonium bifluoride, disodium EDTA, and JFC is used to deplate and electroplate an NCVM sample, and because the ammonium fluoride and the ammonium bifluoride in the deplating solution, which mainly perform a deplating function, are strong acid and weak base salts and are acidic, damage of a strong alkaline deplating solution to a screen printing ink can be solved, and the quality of a deplating product can be improved.
The deplating solution and the method for removing the NCVM from the 2D sapphire glass provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (3)
1. The deplating solution is characterized by comprising ammonium fluoride, ammonium bifluoride, EDTA disodium and JFC, wherein the mass of the ammonium fluoride is 45-65% of that of the deplating solution, the mass of the ammonium bifluoride is 3-8% of that of the deplating solution, the mass of the EDTA disodium is 1-3% of that of the deplating solution, the mass of the JFC is 0.5-5% of that of the deplating solution, and the balance is deionized water.
2. A method of 2D sapphire glass removal of NCVM, comprising:
step 1, deplating a product by using the deplating solution according to claim 1;
and 2, cleaning the deplated product.
3. The method of 2D sapphire glass with NCVM removal according to claim 2, wherein step 1 comprises:
the time for deplating the product by adopting the deplating liquid is 10-20 min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711173806.0A CN109809709B (en) | 2017-11-22 | 2017-11-22 | Deplating liquid and method for removing NCVM (non-volatile memory) from 2D sapphire glass |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711173806.0A CN109809709B (en) | 2017-11-22 | 2017-11-22 | Deplating liquid and method for removing NCVM (non-volatile memory) from 2D sapphire glass |
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| Publication Number | Publication Date |
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| CN109809709A CN109809709A (en) | 2019-05-28 |
| CN109809709B true CN109809709B (en) | 2021-11-23 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2196858A1 (en) * | 2008-12-11 | 2010-06-16 | Shin-Etsu Chemical Co., Ltd. | Coated-type silicon-containing film stripping process |
| CN102234513A (en) * | 2010-04-20 | 2011-11-09 | 深圳富泰宏精密工业有限公司 | Stripping solution for titanium-containing film and using method for stripping solution |
| CN103625141A (en) * | 2013-11-20 | 2014-03-12 | 捷荣模具工业(东莞)有限公司 | Processing method for achieving metallic feeling of integrated cell phone outer shell |
| CN104529531A (en) * | 2015-01-21 | 2015-04-22 | 浙江星星瑞金科技股份有限公司 | Method for deplating sapphire plated layer by using waste polishing solution |
| CN105002564A (en) * | 2015-08-05 | 2015-10-28 | 深圳市海风润滑技术有限公司 | Environment-friendly sapphire film deplating solution and using method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4463054B2 (en) * | 2004-09-17 | 2010-05-12 | 東京応化工業株式会社 | Photoresist stripping solution and substrate processing method using the same |
-
2017
- 2017-11-22 CN CN201711173806.0A patent/CN109809709B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2196858A1 (en) * | 2008-12-11 | 2010-06-16 | Shin-Etsu Chemical Co., Ltd. | Coated-type silicon-containing film stripping process |
| CN102234513A (en) * | 2010-04-20 | 2011-11-09 | 深圳富泰宏精密工业有限公司 | Stripping solution for titanium-containing film and using method for stripping solution |
| CN103625141A (en) * | 2013-11-20 | 2014-03-12 | 捷荣模具工业(东莞)有限公司 | Processing method for achieving metallic feeling of integrated cell phone outer shell |
| CN104529531A (en) * | 2015-01-21 | 2015-04-22 | 浙江星星瑞金科技股份有限公司 | Method for deplating sapphire plated layer by using waste polishing solution |
| CN105002564A (en) * | 2015-08-05 | 2015-10-28 | 深圳市海风润滑技术有限公司 | Environment-friendly sapphire film deplating solution and using method thereof |
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| CN109809709A (en) | 2019-05-28 |
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