CN109802645A - A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device - Google Patents
A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device Download PDFInfo
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- CN109802645A CN109802645A CN201811605254.0A CN201811605254A CN109802645A CN 109802645 A CN109802645 A CN 109802645A CN 201811605254 A CN201811605254 A CN 201811605254A CN 109802645 A CN109802645 A CN 109802645A
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Abstract
The present invention provides a kind of air-gap type piezoelectric sound wave device heterogeneous integrated approach characterized by comprising is lifted bulk acoustic wave device film from donor substrate using soft seal；Bulk acoustic wave device is put into the middle layer above cmos circuit using soft seal, and bulk acoustic wave device is made to be located at the designated position of middle layer simultaneously, there is cavity or designated position to have support construction and sacrificial layer for designated position.Transferable bulk acoustic wave device is transferred on goal systems platform by this method with material trans-printing technology, ultimately forms 3D stack integrated morphology.The advantage of this method is that: lower cost, higher integrated level, lower operation temperature requires and the shorter operating time.
Description
Technical field
The present invention relates to technical field of semiconductors, and particularly a kind of air-gap type piezoelectric sound wave device is heterogeneous integrated
Method and the device.
Background technique
Heterogeneous integrated (Heterogeneous Integration, HI), which refers to, only can be achieved in a system platform
Integrated technology, it manufactures by a series of processes and is assembled into complete electronic sub-system, such as MEMS (Micro-Electro-
Mechanical System) device, SOI/CMOS mixed-signal ASIC (ASIC), minute yardstick passive block and micro-
Power system etc..Heterogeneous integrate is considered as realizing system on chip (System-on-Chip, SoC) and system in package
The Key Strategy of (System-on-a-Package, SoP).At the same time, it is with iii-v element compound, carbon nanotube etc.
The high-performance novel application of representative is more and more extensive.If by based on these high performance materials electronic building brick and traditional silicon substrate it is mutual
Benefit formula metal-oxide semiconductor (MOS) (CMOS) circuit integration then can further obtain together integrated level is higher, performance more preferably
Electronic system, this is of great significance in terms of continuing Moore's Law to integrated circuit.In fact, high-performance mentioned above
Material is not how mutually compatible with traditional cmos process in certain processes, and corresponding electronic building brick generally requires independence in this case
Their groups, are then built on same system platform by heterogeneous integrated means by manufacture.
Existing heterogeneous integrated means are broadly divided into two classes: hybrid integrated and single-chip integration.Hybrid integrated be by technique not
Compatible electronic building brick manufactures respectively, then carries out system-level or wafer scale and is electrically connected.Needing during this will be one of
Component is overturn together with its substrate, and connection protruding point is directed at laggard line unit and is closed.Bonding process to build between even contact
It stands being bonded for molecular level and is integrally formed, finally remove unnecessary substrate, but the process is generally required in hot conditions
It could complete, high temperature may damage certain electronic building bricks.Single-chip integration suitable for process variations it is less big it is heterogeneous it is integrated, when
After a part of component manufacture, on its surface, foundation is electrically connected end and forms connection and specific protective layer, then directly
The processing of second part component is carried out on this basis.
On the other hand, the bulk acoustic wave resonator based on piezoelectric material is attracting the research attention of people.By bulk acoustic wave
Radio frequency front-end filter/duplexer that resonator is constituted has superior filtering characteristic, such as low insertion loss, precipitous transition
Band, biggish power capacity and stronger anti-electrostatic discharging (ESD) ability.High frequency bulk acoustic wave with ultra low frequency temperature drift
Oscillator, phase noise is low, low in energy consumption and bandwidth modulation range is big.In addition to this, these miniature bulk acoustic wave resonators can be by
MEMS technology is largely prepared on a silicon substrate, to reduce unit cost.With thin film bulk acoustic wave resonator (Film Bulk
Acoustic Resonator, FBAR) for, structural representation is as shown in Figure 1, resonator has typical " sandwich " knot
Structure is followed successively by top electrode 110, piezoelectric layer 120 and hearth electrode 130 from top to bottom.When being applied radio-frequency voltage between two electrodes, pressure
Electric layer is inspired bulk acoustic wave and in a thickness direction with miniature deformation, and acoustic wave energy is lost or passes in resonator structure body
It broadcasts, is then transmitted to another transfer when reaching boundary face or is reflected back, ultimately form standing wave, that is, enter resonant state.Into
When row bulk acoustic wave resonator designs, in order to reduce acoustic energy loss to the full extent, in addition to selecting the measures such as low acoustic loss material
Outside, should more focus on constructing a loud reflectivity interface.Air-gap type structure is often used as high acoustic reflectivity sound reflecting face, this is
Because the acoustic impedance of air and resonant body material has larger difference on the order of magnitude, high so as to cause acoustic reflectivity.
Air-gap type structure can be by constructing 140 structure of cavity in substrate material 150 on the effective resonance range thickness direction of resonant body
It realizes, as shown in Figure 1, bulk acoustic wave is common in top electrode upper surface, hearth electrode lower surface and effective resonance range when resonance occurs
It is propagated in the region surrounded.Exist note that effective resonance range here is defined as top electrode, piezoelectric layer and hearth electrode trilaminate material
The region being overlapped on thickness direction.
According to above-mentioned existing heterogeneous integrated approach, it is difficult to realize the heterogeneous integrated of piezoelectric sound wave device film.Piezoelectrics
Acoustic wave device film refers to the piezoelectric sound wave resonator for not adding peripheral structure safeguard measure, i.e., only includes top electrode, piezoelectric layer, bottom
Electrode and necessary metal conducting layer.Compared with the piezoelectric sound wave resonator of other forms, due to not being subject to the protection such as plastic packaging,
Piezoelectric sound wave device film integrally remains membrane structure, and occupied volume very little easily obtains higher integrated level.Firstly,
Bonding technology in hybrid integrated is not suitable for resonator material and high temperature may cause performance compromise to resonator.Secondly,
Even if being carried out in the case where matcoveredn, directlys adopt single chip integrated mode and also easily cause that cmos circuit is impaired and technique
It is complicated.Currently, there is no the efficient heterogeneous integrated side for piezoelectric sound wave device film under the premise of being related to largely preparing
Method.
Summary of the invention
In view of this, the present invention is intended to provide a kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device, has letter
The advantages of single easy, high efficient and reliable.
The heterogeneous integrated approach of air-gap type piezoelectric sound wave device film of the invention, comprising: use soft seal by body
Acoustic wave device film lifts from donor substrate；The bulk acoustic wave device is put into above cmos circuit using the soft seal
In middle layer, and the bulk acoustic wave device is made to be located at the designated position of the middle layer simultaneously, the designated position has cavity,
Or the designated position has support construction and sacrificial layer.
Optionally, the middle layer is the UV glue of semisolid.
Optionally, the designated position has cavity, and is put into the bulk acoustic wave device using the soft seal
Before the step in middle layer above cmos circuit, further includes: form adhesion layer on the intermediate layer.
Optionally, the designated position has support construction and sacrificial layer, and uses the soft seal by the body sound
Wave device is put into before the step in the middle layer above cmos circuit, further includes: forms adhesion layer on the support structure.
Optionally, in the step being put into the bulk acoustic wave device using the soft seal in the middle layer above cmos circuit
After rapid, further includes: the sacrificial layer is removed, to form cavity.
Optionally, the material of the middle layer and the support construction includes but is not limited to: silica, silicon nitride have
Machine polymer.
Optionally, the material of the sacrificial layer includes but is not limited to silica.
Optionally, the mode that is electrically connected between the bulk acoustic wave device and cmos circuit includes but is not limited to deposited metal
Film or wire bonding.
Optionally, in device substrate of the cmos circuit based on following material: GaAs, gallium nitride, silicon carbide, Buddha's warrior attendant
Stone, lithium niobate, lithium tantalate or quartz.
Optionally, the material of the adhesion layer includes but is not limited to that ethyl cellulose, benzocyclobutene or organic solution are mixed
Close object.
The heterogeneous integrated approach of air-gap type piezoelectric sound wave device of the invention, can turn with material trans-printing technology
It moves bulk acoustic wave device to be transferred on goal systems platform, ultimately forms 3D stack integrated morphology.The advantage of this method is at least wrapped
Include the following aspects: (1) lower cost.This method directly operates bulk acoustic wave device film, and process more simplifies.
(2) higher integrated level.Film-form bulk acoustic wave device film itself has the characteristics that small in size, light weight, thickness are more integrated than conventional
Small one to two orders of magnitude of respective devices in method, and space occupancy rate is less compared with the integrated layout of traditional 2D and 3D.(3)
Lower operation temperature requirement.The piezoelectric sound wave device with transferable structure is integrated using trans-printing technology,
Operation can be completed in lower temperature, avoid tradition and be bonded contour temperature requirement.(4) the shorter operating time.It is bonded with tradition
Equal operations are compared, and the operation such as transfer process and its alignment is time-consuming shorter.
The present invention also proposes a kind of heterogeneous integrated air-gap type piezoelectric sound wave device, it is by means of the present invention
Prepared.
Heterogeneous integrated air-gap type piezoelectric sound wave device of the invention may include: substrate, be located in the substrate
The cmos circuit of side, the middle layer with cavity above the cmos circuit, the bulk acoustic wave device above cavity
Film and electrode plate, electrode plate window and conductive metal film.
Heterogeneous integrated air-gap type piezoelectric sound wave device of the invention may include: substrate, be located in the substrate
Cmos circuit, the UV glue-line with cavity above the cmos circuit of side, the bulk acoustic wave device above cavity
Film and electrode plate, electrode plate window and conductive metal film.
Heterogeneous integrated air-gap type piezoelectric sound wave device of the invention may include: substrate, be located in the substrate
The cmos circuit of side, the support construction above the cmos circuit, the bulk acoustic wave device above the support construction
Film and electrode plate.
In heterogeneous integrated air-gap type piezoelectric sound wave device of the invention, on the middle layer have adhesion layer or
There is adhesion layer on support construction described in person.
Detailed description of the invention
Attached drawing for a better understanding of the present invention, does not constitute an undue limitation on the present invention.Wherein:
Fig. 1 is the structural schematic diagram with typical " sandwich " structural membrane bulk acoustic wave resonator.
Fig. 2 is the flow diagram of the heterogeneous integrated approach of air-gap type piezoelectric sound wave device of the embodiment of the present invention；
Fig. 3 is the sectional view of the pierce circuit main structure in the heterogeneous integrated device of the embodiment of the present invention；
Fig. 4 is the sectional view of the heterogeneous integrated device of air-gap type piezoelectric sound wave device of first embodiment of the invention；
Fig. 5 is the sectional view of the heterogeneous integrated device of air-gap type piezoelectric sound wave device of second embodiment of the invention；
Fig. 6 (a) and Fig. 6 (b) is the heterogeneous integrator of third embodiment of the invention air-gap type piezoelectric sound wave device respectively
The processing intermediate state of part and the sectional view of final state；
Fig. 7 is that the adhesion layer of the heterogeneous integrated device of air-gap type piezoelectric sound wave device of fourth embodiment of the invention is integrated
Partial structurtes sectional view.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, two members can also be can be indirectly connected through an intermediary
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Fig. 2 is the flow diagram of the heterogeneous integrated approach of air-gap type piezoelectric sound wave device of the embodiment of the present invention.Such as
Shown in Fig. 2, this method comprises: A. is lifted bulk acoustic wave device film using soft seal from donor substrate；B. using described soft
The bulk acoustic wave device is put into the middle layer above cmos circuit by seal, and it is described to be simultaneously located at the bulk acoustic wave device
There is cavity or the designated position to have support construction and sacrificial layer for the designated position of middle layer, the designated position.This
In bulk acoustic wave device film refer to that thickness is only several microns of complete unencapsulated bulk acoustic wave device, thickness is much smaller than encapsulating
Similar device.
The heterogeneous integrated approach of air-gap type piezoelectric sound wave device of the invention, can turn with material trans-printing technology
It moves bulk acoustic wave device to be transferred on goal systems platform, ultimately forms 3D stack integrated morphology.The advantage of this method is at least wrapped
Include the following aspects: (1) lower cost.This method directly operates bulk acoustic wave device film, and process more simplifies.
(2) higher integrated level.Film-form bulk acoustic wave device film itself has the characteristics that small in size, light weight, thickness are more integrated than conventional
Small one to two orders of magnitude of respective devices in method, and space occupancy rate is less compared with the integrated layout of traditional 2D and 3D.(3)
Lower operation temperature requirement.The piezoelectric sound wave device with transferable structure is integrated using trans-printing technology,
Operation can be completed in lower temperature, avoid tradition and be bonded contour temperature requirement.(4) the shorter operating time.It is bonded with tradition
Equal operations are compared, and the operation such as transfer process and its alignment is time-consuming shorter.
All embodiments of the present invention by between FBAR and oscillator CMOS integrated circuit it is heterogeneous it is integrated for be unfolded
Narration.It should be noted that piezoelectric sound wave device is not limited to FBAR, further includes but be not limited to other types of bulk acoustic wave device
Part, as piezoelectricity micromachined ultrasonic transducer (Piezoelectric Micromachined Ultrasonic Transducers,
PMUT), lamb wave resonator (Lamb Wave Resonator, LWR), MEMS microphone etc..CMOS integrated circuit includes but not
It is limited to pierce circuit, can also be filter circuit, duplexer circuit etc..The system of diverting the aim is not limited to the integrated electricity of CMOS
Road further includes but is not limited to based on GaAs (GaAs), gallium nitride (GaN), silicon carbide (SiC), diamond (diamond), niobium
The electronics member device of the substrates such as sour lithium (lithium niobate), lithium tantalate (lithium tantalate), quartzy (quartz)
Part.
As shown in figure 3, (CMOS integrated circuit) main structure 200 of pierce circuit involved in following embodiment is wrapped
It includes: electrode plate 210, cmos circuit 220 and silicon base 230.Wherein, electrode plate 210 be used for the external world foundation be electrically connected (including
Connection between FBAR).In addition FBAR is processed by MEMS technology and is obtained, nuclear structure is by two lateral electrodes and to be located at electrode
Between piezoelectric layer constitute sandwich structure.The FBAR electrode be it is following any one: osmium, magnesium, gold, tungsten, molybdenum, platinum, ruthenium,
Iridium, germanium, copper, titanium, titanium tungsten, aluminium, chromium, arsenic doping gold.Optionally, the material of the FBAR piezoelectric layer be it is following any one: nitrogen
Change aluminium, zinc oxide, lead zirconate titanate, lithium niobate, quartz, potassium niobate, lithium tantalate.Optionally, the material of the piezoelectric layer is doping
The aluminium nitride of rare earth element.Above-mentioned material is piezoelectric membrane, and thickness is less than 10 microns.Aluminium nitride film is heteromorphs or list
Crystalline form state, growth pattern are thin film sputtering (sputtering) or Metalorganic chemical vapor deposition method (MOCVD).
FBAR main body is connected on wafer by anchor point and has transferable characteristic.Soft seal for transfer is generally by having
There is the material of viscoelasticity to make to obtain, such as dimethyl silicone polymer (Polydimethylsiloxane, PDMS) etc..
When transfer, first FBAR device film is lifted from donor substrate (such as Silicon Wafer) with soft seal, this process
In anchor point structure for fettering FBAR be broken, FBAR is adhered to each other with soft seal.Secondly, the soft of FBAR will be carried
Seal is aligned with the cavity structure on pierce circuit, and moving down soft seal contacts the bottom surface FBAR with cavity.Finally, slow
Slowly lift soft seal, FBAR is separated with soft seal and is attached on pierce circuit.The transfer operation can array high-volume
It carries out.
To more fully understand those skilled in the art, it is illustrated combined with specific embodiments below.
Embodiment 1
In the present embodiment, the middle layer with cavity structure is formed above cmos circuit, then carries out device transfer.
Firstly, intermediate layer material is added to above cmos circuit by conventional methods such as spin coating or depositions；Secondly, directly
Add etching technics formation cavity structure and electrode plate window, electrode plate window that electrode plate is revealed by photoetching process or photoetching
Out；Finally, FBAR is transferred to above cavity using transfer printing machine and is electrically connected with cmos circuit foundation.Obtained knot
Structure 300 is as shown in Figure 4, comprising: conductive metal film 310, FBAR device 320, middle layer 330, the cavity structure in middle layer
340, electrode plate window 350, electrode plate 360, cmos circuit 370 and silicon base 380.
In the present embodiment, intermediate layer material includes but is not limited to silica (SiO2), silicon nitride (Si3N4), organic polymer
Object (Polymer) such as poly- acetimide (Polyimide, PI) etc..Between FBAR and cmos circuit be electrically connected mode in addition to
Conductive metal film can also be realized by modes such as wire bondings (Wire bonding).
Embodiment 2
In the present embodiment, reliably integrated using the realization of UV glue and hot padding.The material of cavity layer is the UV glue of semisolid,
Its characteristic be can be easily pasted on specified face, shape-plastic and irreversible solid by that can be generated when ultraviolet light
Change.The structure finally obtained is as shown in figure 5, structural unit 400 is followed successively by conductive metal film 410, FBAR device from top to bottom
420, UV glue-line 430, the cavity structure 440 on UV glue-line, electrode plate window 450, electrode plate 460, cmos circuit 470 and silicon substrate
Bottom 480.
After UV glue is secured at cmos circuit surface, cavity structure is imprinted out with thermal marking method, specific practice is: in UV
The light transmission hard material with bulge-structure is covered above glue, such as glass is continuously applied certain pressure and temperature, uses ultraviolet light later
It irradiates in short-term, so that the generation of UV glue is not fully cured, hard material separates but maintains certain stickiness for irradiation in short-term.Remove hard
Transfer operation is carried out after material, then uses ultraviolet light again, UV glue is fully cured.Finally, cmos circuit and FBAR it
Between establish and be electrically connected.
In the present embodiment, mode is electrically connected in addition to deposited metal film, can also be realized by modes such as wire bondings.
Embodiment 3
In the present embodiment, make FBAR structure hanging by establishing support construction, to construct sound reflecting interface in bottom.
Support construction and sacrificial layer are established first, then FBAR are transferred to above support construction, the structure of formation such as Fig. 6 (a) institute
Show.In Fig. 6 (a), structural unit 5000 include: FBAR device 5010, support construction 5020, sacrificial layer 5030, electrode plate 5040,
Cmos circuit 5050 and silicon base 5060.Finally sacrificial layer material is discharged, keep the effective resonance range of FBAR hanging and is established
Being electrically connected between FBAR and cmos circuit, shown in finally formed structure such as Fig. 6 (b).In Fig. 6 (b), structure 5100 is wrapped
It includes: conductive metal film 5110, FBAR device 5120, support construction 5130, electrode plate 5140, cmos circuit 5150 and silicon base
5160。
In the present embodiment, backing material includes but is not limited to silica (SiO2), silicon nitride (Si3N4), organic polymer
(Polymer) such as poly- acetimide (Polyimide, PI) etc., sacrificial layer material includes but is not limited to silica (SiO2) etc..
It should be noted that sacrificial layer release process support construction should not be caused etching etc. influence.The mode of being electrically connected includes but is not limited to
Deposited metal film, wire bonding etc..
Embodiment 4
In the present embodiment, adhesion layer is introduced between cavity structure and FBAR, it is intended to so that between cavity structure and FBAR
Connection it is relatively reliable.It is followed successively by FBAR from top to bottom containing partial structurtes signal such as Fig. 7, structural unit 600 that adhesion layer integrates
Device 610, adhesion layer 620 and the middle layer 640 with cavity structure 630.Adhesion layer can be separately applied in embodiment 3, at this time
Adhesion layer is located in the support construction in embodiment 3.
In the present embodiment, adhesion layer has thermosetting property.Adhesion layer is heat cured for after FBAR transfer, to form stabilization
Reliable connection relationship.The generation type of adhesion layer is not unique, is the adhesion layer of liquid for original state, can will be by sticking
It is coated on thin layer by the modes such as liquid spin coating or 3D printing, again evaporates solvent after the completion of transfer.In order to accelerate solvent evaporation
Process can integrally heat platform under the premise of not damaging circuit structure.
In the present embodiment, stick layer material include but is not limited to ethyl cellulose (EC), it is benzocyclobutene (BCB), organic
Solution mixture (such as PI and N-Methyl pyrrolidone).
The invention also provides heterogeneous integrated air-gap type piezoelectric sound wave device, it is institute by means of the present invention
Preparation.
The heterogeneous integrated air-gap type piezoelectric sound wave device of the embodiment of the present invention can be as shown in Figure 4, comprising: base
Bottom, the cmos circuit above substrate, the middle layer with cavity above cmos circuit, the body above cavity
Acoustic wave device film and electrode plate, electrode plate window and conductive metal film.
The heterogeneous integrated air-gap type piezoelectric sound wave device of the embodiment of the present invention can be as shown in Figure 5, comprising: base
Bottom, the cmos circuit above substrate, the UV glue-line with cavity above cmos circuit, the body above cavity
Acoustic wave device film and electrode plate, electrode plate window and conductive metal film.
The heterogeneous integrated air-gap type piezoelectric sound wave device of the embodiment of the present invention can be as shown in Fig. 6 (b), comprising:
Substrate, the cmos circuit above substrate, the support construction above cmos circuit, the body sound above support construction
Wave device film and electrode plate.
In the heterogeneous integrated air-gap type piezoelectric sound wave device of the embodiment of the present invention, there is adhesion layer on middle layer
There is adhesion layer on (as shown in Figure 7) or support construction.
Above-mentioned specific embodiment, does not constitute a limitation on the scope of protection of the present invention.Those skilled in the art should be bright
It is white, design requirement and other factors are depended on, various modifications, combination, sub-portfolio and substitution can occur.It is any
Made modifications, equivalent substitutions and improvements etc. within the spirit and principles in the present invention, should be included in the scope of the present invention
Within.
Claims (10)
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| CN112968123A (en) * | 2021-02-04 | 2021-06-15 | 电子科技大学 | Flexible film type piezoelectric acoustic emission sensor and manufacturing method thereof |
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| CN109802645B (en) | 2025-03-14 |
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