CN109742172A - Method for fabricating N-type selective emitter bifacial cells by spin coating boron source laser doping - Google Patents
Method for fabricating N-type selective emitter bifacial cells by spin coating boron source laser doping Download PDFInfo
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- 229910052796 boron Inorganic materials 0.000 title claims abstract description 91
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 238000004528 spin coating Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000009792 diffusion process Methods 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 39
- 239000011574 phosphorus Substances 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 20
- 210000002268 wool Anatomy 0.000 claims description 18
- 235000008216 herbs Nutrition 0.000 claims description 17
- 238000007650 screen-printing Methods 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 229910019213 POCl3 Inorganic materials 0.000 claims description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000003475 lamination Methods 0.000 description 12
- 239000002253 acid Substances 0.000 description 10
- 238000005245 sintering Methods 0.000 description 10
- 239000002002 slurry Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910020286 SiOxNy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000005001 laminate film Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DAJLHNABGVYSOO-UHFFFAOYSA-N boric acid;2,3-dimethylbutane-2,3-diol Chemical compound OB(O)O.CC(C)(O)C(C)(C)O DAJLHNABGVYSOO-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明涉及旋涂硼源激光掺杂制作N型选择性发射极双面电池的方法，该方法采用的步骤为：N型硅片制绒、正面采用旋涂法旋涂有机硼源后烘干、扩散炉中扩散形成正面轻掺杂发射极、正面BSG激光掺杂形成重掺杂发射极、背面清洗去PSG、背面磷扩散形成磷背场、正反面沉积减反射钝化膜、印刷正背面电极完成电池制作。与现有技术相比，本发明采用旋涂法将硼源涂覆在硅片正面，利用扩散后正面形成的BSG选择性激光掺杂，使得电极下方区域重掺杂硼，有效降低接触电阻，非电极区采用轻掺杂硼减少了正表面的复合，有效提高了电池的电性能。
The invention relates to a method for fabricating an N-type selective emitter double-sided battery by laser doping of spin-coating boron source. The method adopts the steps of: N-type silicon wafer texturing, spin-coating an organic boron source on the front side, drying and diffusion Diffusion in furnace to form front lightly doped emitter, front BSG laser doping to form heavily doped emitter, backside cleaning to remove PSG, backside phosphorus diffusion to form phosphorus backfield, front and back deposition anti-reflection passivation film, printing front and back electrodes completed battery production. Compared with the prior art, the present invention uses the spin coating method to coat the boron source on the front side of the silicon wafer, and utilizes the BSG selective laser doping formed on the front side after diffusion, so that the area under the electrode is heavily doped with boron, and the contact resistance is effectively reduced. The use of lightly doped boron in the non-electrode region reduces the recombination of the positive surface and effectively improves the electrical performance of the battery.
Description
Technical field
The present invention relates to N-type double-sided solar battery fields, make N-type more particularly, to a kind of spin coating boron source laser doping
The method of selective emitter double-side cell.
Background technique
The research and development and industrial practice of solar-photovoltaic technology in the late three decades, establish the silicon based on crystalline silicon substrate
The dominant position of brilliant photovoltaic technology.It is distinguished according to the conduction type of crystalline silicon substrate, silicon wafer can be divided into p-type and two kinds of N-type.N-type is brilliant
Silion cell has bigger improved efficiency space and stability due to its high minority carrier life time and without inherent advantages such as photo attenuations,
The hot spot paid close attention to and studied as industry.
When front side emitter area doping concentration is excessively high, the recombination rate of the few son of emitter region be will increase, when doping concentration is too low
When, and will increase the contact resistance of metal electrode and silicon, reduce battery electrical property.
Currently, most of battery producing line uses BBr3Gas phase reaction boron diffusion process, Publication No. CN103633190A's
A kind of device and method of crystal silicon solar energy battery boron diffusion are disclosed in application for a patent for invention file.The device by boiler tube,
Boron source bottle and tail gas bottle composition.Liquid boron source in boron source bottle is first after carrier gas (nitrogen) is gasified by furnace wall
Air inlet is sent into diffusion furnace, and deposit and spread is and then carried out under the atmosphere of nitrogen and oxygen.The shortcomings that patent is gas circuit
System complex, process are heavy, and BBr3There are stronger corrosivity and toxicity.Document [J.Mater.Sci.Technol.,
2013,29 (7): 652-654] one kind is reported by the molecular boron slurry of borosilicate nanoparticle, and by way of silk-screen printing
Boron slurry is printed on silicon chip surface and carries out boron diffusion process.The shortcomings that this method, is that needing to add special silk-screen printing sets
Standby, boron slurry preparation is also complex.[2013,4 (21): J.Phys.Chem.Lett. 3741-3746] reports one to document
Kind organo-boron polymer (polyvinyl boric acid pinacol ester-PVBAPE), and PVBAPE is spin-coated on silicon wafer table using sol evenning machine
Face carries out boron diffusion process.The characteristics of this spin coating boron diffusion technique be it is easy to operate, equipment cost is low, diffusing qualities are good, raw
Produce it is high-efficient, but PVBAPE synthesis it is complicated, expensive, boron content is low, do not meet the requirement of industrialized production.Publication No.
The invention discloses a kind of two-sided electricity of N-type selective emitter for publicity in the patent application patent document of CN106784053A
Pond, including N-type matrix, N-type matrix, side are disposed with heavy doping emitter region, emitter region are lightly doped, is positive blunt
Change antireflective film, front electrode, the other side is disposed with phosphorus doping back surface field area, passivating back antireflective film and rear electrode；Its
In: front electrode passes through front passivated reflection reducing membrane and Highly doped emitter domain forms Ohmic contact；It is blunt that rear electrode passes through the back side
Change antireflective film and phosphorus doping back surface field area forms Ohmic contact.The heavy doping emitter of the front electrode of the patent N-type matrix is adopted
Stop slurry etching technics with silk-screen printing, infused by the laser doping of BSG, silk-screen printing boracic slurry high annealing, ion
Enter one of formation in technique.The mode of the formation selective emitter is more complex or higher cost, should not industrialize
Middle application.Chinese patent CN105390374A discloses a kind of improvement N-type crystal silicon double-side solar cell boron spin coating method, including silicon
Piece prerinse；Silicon wafer wool making；Silicon chip；Cleaning drying；Six steps such as liquid boron diffusion source spin coating drying.This method is improved
The yield rate that silicon chip surface is completely covered in liquid boron diffusion source is improved, and then increases the uniformity of silicon wafer PN junction, but this method
The BSG formed after the diffusion of spin coating boron source is not efficiently used, later process directly washes off the BSG on surface, thus front side emitter pole
Sheet resistance is low, and boron doping concentration is high, causes battery emitter compound more, battery conversion efficiency is low.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of spin coating boron source laser
The method of doping production N-type selective emitter double-side cell, solves the problems, such as more of the existing technology in industrialization.?
In the production of N-type double-side cell, restricting one of principal element of battery efficiency is contact electricity of the electrode metallization with silicon body
Few sub- recombination rate that resistance is big and surface boron doping concentration high band is next increases.The present invention is coated in front, warp using spin coating boron source
It is diffuseed to form in diffusion furnace and emitter is lightly doped, heavy doping emitter is formed using the BSG laser doping formed after diffusion.The party
The boron source preparation method that method uses is simple, and the more other Boron diffusion methods of cost are low, and selective emitter is using shape after boron source diffusion
At BSG laser doping, it is easy to operate compared with other formation selective emitters, can be widely applied to industrialized production and work as
In.
The purpose of the present invention can be achieved through the following technical solutions:
The step of method that spin coating boron source laser doping makes N-type selective emitter double-side cell, use are as follows: N-type silicon
Emitter, front is lightly doped using diffuseing to form front in drying after the organic boron source of spin-coating method spin coating, diffusion furnace in piece making herbs into wool, front
BSG laser doping forms heavy doping emitter, Wafer Backside Cleaning removes PSG, back side phosphorus diffusion forms phosphorus back surface field, front and back sides deposition anti-reflection
Penetrate passivating film, the positive rear electrode of printing completes battery production.
Further, one layer of prewetting liquid of silicon chip surface elder generation spin coating after drying making herbs into wool when positive spin coating, every prewetting liquid
Amount be 0.3~1ml, then spin coating boron source again, the amount of boron source are 0.5~2ml, and rotation speed is 1000~4000r/min, rotation
Turning the time is 2~10s, and silicon wafer is finally dried to 5~30s under the conditions of 150~300 DEG C.
Further, the silicon wafer of the good boron source of positive spin coating is put into tubular diffusion furnace and carries out High temperature diffusion, diffusion temperature
Control forms the shallow doping emitter in front and the BSG with a thickness of 40~100nm, spreads the control of rear surface sheet resistance at 930~1000 DEG C
System is in 80~200ohm/sq.
Further, positive heavy doping emitter is completed using BSG laser doping method, the side of heavy doping emitter region
Resistance control is in 10~70ohm/sq.
Further, use wavelength for the laser of 355nm or 532nm when laser doping, hot spot uses square focus spot, laser
Power is between 20W-50W, fundamental frequency 100kHz-360kHz.
Further, the antireflective passive film of front and back sides deposition is SiNX、SiO2、SiOXNy、Al2O3Or TiO2In film
One or more, with a thickness of 50~100nm.
Further, back side phosphorus doping back surface field region uses high temperature POCl3Diffusion, PECVD deposition PSG annealing, from
One of formation in son injection high annealing or silk-screen printing phosphorus source high-temperature annealing process.
Further, front electrode and rear electrode are formed using screen printing mode, and front electrode passes through positive anti-reflection
It penetrates passivating film and heavy doping emitter forms Ohmic contact, rear electrode passes through passivating back antireflective coating and phosphorus back surface field shape
At Ohmic contact.
Compared with prior art, the present invention is coated in front using spin coating boron source, is lightly doped through diffuseing to form in diffusion furnace
Emitter makes the BSG formed after diffusion form part heavy doping emitter, laser doping BSG using laser doping process
Technique effectively reduces the contact resistance of electrode and silicon, and emitter region low doping concentration is lightly doped and effectively reduces the few son of front surface
Recombination rate effectively improves the electrical property of battery.It only need to increase a laser implantation machine in existing producing line, solve production
The low technical problem of battery conversion efficiency in line technology.
Detailed description of the invention
Fig. 1 is prepared N-type selective emitter double-side cell organigram.
In figure, emitter, 4- heavy doping emitter, 5-N is lightly doped in 1- front metal electrode, 2- antireflective passivation layer, 3-
Type silicon substrate, 6- phosphorus-diffused layer, 7- antireflective passive film, 8- back metal electrode.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
A kind of method of spin coating boron source laser doping production N-type selective emitter double-side cell, solves in industrialization
Some problems of the existing technology.In the production of N-type double-side cell, restricting one of principal element of battery efficiency is electricity
Few sub- recombination rate that the contact resistance of pole metallization and silicon body is big and surface boron doping concentration high band is next increases.The present invention adopts
It is coated in front with spin coating boron source, emitter is lightly doped through diffuseing to form in diffusion furnace, is mixed using the BSG laser formed after diffusion
Miscellaneous formation heavy doping emitter.The boron source preparation method that this method uses is simple, and the more other Boron diffusion methods of cost are low, selectivity
The BSG laser doping that emitter is formed after being spread using boron source, it is easy to operate compared with other formation selective emitters, it can be wide
It is general to be applied in industrialized production, the step of use are as follows:
1, N-type silicon chip making herbs into wool；
2, using drying after the organic boron source of spin-coating method spin coating, the silicon chip surface after drying making herbs into wool in spin coating first revolves in front
One layer of prewetting liquid is applied, the amount of every prewetting liquid is 0.3~1ml, and then spin coating boron source, the amount of boron source are 0.5~2ml, rotation again
Speed is 1000~4000r/min, and rotational time is 2~10s, silicon wafer finally dried to 5 under the conditions of 150~300 DEG C~
30s；
3, front is diffuseed to form in diffusion furnace and emitter is lightly doped, control the temperature of tubular diffusion furnace, diffusion temperature control
At 930~1000 DEG C, form the shallow doping emitter in front and there is certain thickness BSG, BSG thickness generally in 40~100nm,
The control of rear surface sheet resistance is spread in 80~200ohm/sq
4, positive heavy doping emitter is completed using BSG laser doping method, when laser doping use wavelength for 355nm or
The laser of 532nm, hot spot use square focus spot, and laser power is between 20W-50W, fundamental frequency 100kHz-360kHz, heavy doping
The sheet resistance of emitter region is controlled in 10~70ohm/sq；
5, Wafer Backside Cleaning removes PSG；
6, using high temperature POCl3Diffusion, PECVD deposition PSG annealing, ion implantation high temperature annealing or silk-screen printing phosphorus source are high
One of warm annealing process carries out back side phosphorus diffusion and forms phosphorus back surface field；
7, front and back sides deposit antireflective passive film, and the antireflective passive film of deposition can be SiNX、SiO2、SiOXNy、Al2O3
Or TiO2One or more of film, with a thickness of 50~100nm；
8, front electrode and rear electrode are formed using screen printing mode, front electrode passes through front antireflective passive film
Ohmic contact is formed with heavy doping emitter, rear electrode forms ohm with phosphorus back surface field across passivating back antireflective coating and connects
Battery production is completed in touching.The structure of prepared N-type selective emitter double-side cell is as shown in Figure 1, in N-type silicon substrate 5
Positive and negative surface on respectively doping emitter 3, heavy doping emitter 4 and phosphorus-diffused layer 6 is lightly doped, emitter 3 is being lightly doped
There are also antireflective passivation layers 2 for upper surface, and are printed with front metal electrode 1, and it is blunt that there are also antireflectives the upper surface of phosphorus-diffused layer 6
Change film 7, and is printed with back metal electrode 8.
More detailed case study on implementation below, by following case study on implementation further illustrate technical solution of the present invention with
And the technical effect that can be obtained.
Embodiment 1
It uses resistivity for 1~8 N-type silicon chip, will be dried after its making herbs into wool, silicon chip surface spin coating 1ml prewetting liquid first, then
Spin coating 0.5ml boron source, spin speed are set in 2500r/min, rotational time 5s, finally by having in boron source at 200 DEG C
Machine is mutually dried.The silicon wafer of spin coating boron source is put into tubular diffusion furnace and diffuses to form front side emitter pole, positive sheet resistance control is in 60-
Between 70.
After completing aforesaid operations, removal silicon chip back side oxide, the phosphorus doping back at the back side are cleaned using 5%~10%HF acid
Field uses PClO3High temperature diffusion process is formed, and diffused sheet resistance is controlled in 60~100ohm/sq.
Further, the oxide that removal front and the back side are cleaned using 5%~10%HF acid, using SiNX/SiO2Lamination
Passivation mode forms front and the passivated reflection reducing at the back side penetrates film, and plastics thickness control is between 50~100nm.
In the above-described embodiments, front electrode and rear electrode use screen printing mode, and sintering furnace sintering keeps electrode golden
Categoryization, front electrode pass through lamination antireflective passive film contacted with emitter, rear electrode pass through lamination antireflective passive film and
The contact of phosphorus back surface field.
Embodiment 2
It uses resistivity for 1~8 N-type silicon chip, will be dried after its making herbs into wool, silicon chip surface spin coating 1ml prewetting liquid first, then
Spin coating 0.5ml boron source, spin speed are set in 2500r/min, rotational time 5s, finally by having in boron source at 200 DEG C
Machine is mutually dried.The silicon wafer of spin coating boron source is put into tubular diffusion furnace to diffuse to form, emitter is lightly doped, silicon chip surface after diffusion
Thick BSG is formed, heavy doping emitter is formed using laser doping.
In the above-described embodiments, the sheet resistance that emitter region is lightly doped is 80~200ohm/sq, heavy doping emitter region
Sheet resistance be 10~70ohm/sq.
After completing aforesaid operations, removal silicon chip back side oxide, the phosphorus doping back at the back side are cleaned using 5%~10%HF acid
Field uses PClO3High temperature diffusion process is formed, and diffused sheet resistance is controlled in 60~100ohm/sq.
Further, the oxide that removal front and the back side are cleaned using 5%~10%HF acid, using SiNX/SiO2Lamination
Passivation mode forms front and the passivated reflection reducing at the back side penetrates film, and plastics thickness control is between 50~100nm.
In the above-described embodiments, front electrode and rear electrode use screen printing mode, and sintering furnace sintering keeps electrode golden
Categoryization, front electrode pass through lamination antireflective passive film contacted with emitter, rear electrode pass through lamination antireflective passive film and
The contact of phosphorus back surface field.
Embodiment 1 and 2 gained N-type double-side solar cell electrical property of embodiment are as follows:
Available from above-mentioned actual measurement embodiment data, embodiment 1 is traditional spin coating boron source method, is washed away just after boron diffusion
The BSG in face, and embodiment 2 is one of the implementation particular content of this patent, forms heavy doping emitter using laser doping BSG,
It is small to obtain cell series resistance (Rs), battery performance more preferably experimental result, so as to prove laser doping in this patent
BSG significantly improves battery electrical property after the diffusion of spin coating boron source.
Embodiment 3
It uses resistivity for 1~8 N-type silicon chip, will be dried after its making herbs into wool, silicon chip surface spin coating 1ml prewetting liquid first, then
Spin coating 0.5ml boron source, spin speed are set in 2500r/min, rotational time 5s, finally by having in boron source at 200 DEG C
Machine is mutually dried.The silicon wafer of spin coating boron source is put into tubular diffusion furnace to diffuse to form, emitter is lightly doped, silicon chip surface after diffusion
Thick BSG is formed, heavy doping emitter is formed using laser doping.
In the above-described embodiments, the sheet resistance that emitter region is lightly doped is 80~200ohm/sq, heavy doping emitter region
Sheet resistance be 10~70ohm/sq.
After completing aforesaid operations, removal silicon chip back side oxide, the phosphorus doping back at the back side are cleaned using 5%~10%HF acid
Field anneals to be formed using ion implanting, and diffused sheet resistance is controlled in 60~100ohm/sq.
Further, the oxide that removal front and the back side are cleaned using 5%~10%HF acid, using SiOxNyFilm is made
For the antireflective passive film in front and the back side, plastics thickness control is between 50~100nm.
In the above-described embodiments, front electrode and rear electrode use screen printing mode, and sintering furnace sintering keeps electrode golden
Categoryization, front electrode pass through lamination antireflective passive film contacted with emitter, rear electrode pass through lamination antireflective passive film and
The contact of phosphorus back surface field.
Embodiment 4
It uses resistivity for 1~8 N-type silicon chip, will be dried after its making herbs into wool, silicon chip surface spin coating 1ml prewetting liquid first, then
Spin coating 0.5ml boron source, spin speed are set in 2500r/min, rotational time 5s, finally by having in boron source at 200 DEG C
Machine is mutually dried.The silicon wafer of spin coating boron source is put into tubular diffusion furnace to diffuse to form, emitter is lightly doped, silicon chip surface after diffusion
Thick BSG is formed, heavy doping emitter is formed using laser doping.
In the above-described embodiments, the sheet resistance that emitter region is lightly doped is 80~200ohm/sq, heavy doping emitter region
Sheet resistance be 10~70ohm/sq.
After completing aforesaid operations, removal silicon chip back side oxide, the phosphorus doping back at the back side are cleaned using 5%~10%HF acid
Field uses PClO3High temperature diffusion process is formed, and diffused sheet resistance is controlled in 60~100ohm/sq.
Further, the oxide at removal front and the back side is cleaned using 5%~10%HF acid, front uses SiNx/
Al2O3Laminate film, the back side use SiOxNyThe plastics thickness control at film, front and the back side is between 50~100nm.
In the above-described embodiments, front electrode and rear electrode use screen printing mode, and sintering furnace sintering keeps electrode golden
Categoryization, front electrode pass through lamination antireflective passive film contacted with emitter, rear electrode pass through lamination antireflective passive film and
The contact of phosphorus back surface field.
Embodiment 5
It uses resistivity for 1~8 N-type silicon chip, will be dried after its making herbs into wool, silicon chip surface spin coating 1ml prewetting liquid first, then
Spin coating 0.5ml boron source, spin speed are set in 2500r/min, rotational time 5s, finally by having in boron source at 200 DEG C
Machine is mutually dried.The silicon wafer of spin coating boron source is put into tubular diffusion furnace to diffuse to form, emitter is lightly doped, silicon chip surface after diffusion
Thick BSG is formed, heavy doping emitter is formed using laser doping.
In the above-described embodiments, the sheet resistance that emitter region is lightly doped is 80~200ohm/sq, heavy doping emitter region
Sheet resistance be 10~70ohm/sq.
After completing aforesaid operations, removal silicon chip back side oxide, the phosphorus doping back at the back side are cleaned using 5%~10%HF acid
Field is formed using silk-screen printing phosphorus slurry high temperature diffusion process, and diffused sheet resistance is controlled in 60~100ohm/sq.
Further, the oxide at removal front and the back side is cleaned using 5%~10%HF acid, front uses SiNx/
Al2O3Laminate film, the back side use SiOxNyThe plastics thickness control at film, front and the back side is between 50~100nm.
In the above-described embodiments, front electrode and rear electrode use screen printing mode, and sintering furnace sintering keeps electrode golden
Categoryization, front electrode pass through lamination antireflective passive film contacted with emitter, rear electrode pass through lamination antireflective passive film and
The contact of phosphorus back surface field.
Embodiment 6
The method of spin coating boron source laser doping production N-type selective emitter double-side cell:
N-type silicon chip making herbs into wool；
One layer of prewetting liquid of silicon chip surface elder generation spin coating after drying making herbs into wool when positive spin coating, the amount of every prewetting liquid are
0.3ml, then spin coating boron source, the amount of boron source are 0.5ml, rotation speed 1000r/min, rotational time 2s again, finally will
Silicon wafer dries 30s under the conditions of 150 DEG C；
The silicon wafer of the good boron source of positive spin coating is put into tubular diffusion furnace and carries out High temperature diffusion, diffusion temperature is controlled 930
DEG C, the BSG of the shallow doping emitter and 40nm thickness in front is formed, diffusion rear surface sheet resistance control is in 80~200ohm/sq；
Front is diffuseed to form in diffusion furnace, and emitter is lightly doped；
Positive BSG laser doping forms heavy doping emitter, is completed using BSG laser doping method, heavy doping emitter region
The sheet resistance control in domain uses wavelength for the laser of 355nm in 10ohm/sq, laser doping, and hot spot uses square focus spot, laser
Power is in 20W, fundamental frequency 100kHz；
Wafer Backside Cleaning removes PSG；
Using high temperature POCl3Overleaf phosphorus diffusion forms phosphorus back surface field to diffusion technique；
Front and back sides deposition thickness is the SiN of 50nmXAntireflective passive film；
Positive rear electrode is printed, front electrode forms ohm with heavy doping emitter across front antireflective passive film and connects
Touching, rear electrode passes through passivating back antireflective coating and phosphorus back surface field forms Ohmic contact, to complete battery production.
Embodiment 7
The method of spin coating boron source laser doping production N-type selective emitter double-side cell:
N-type silicon chip making herbs into wool；
One layer of prewetting liquid of silicon chip surface elder generation spin coating after drying making herbs into wool when positive spin coating, the amount of every prewetting liquid are
0.5ml, then spin coating boron source again, the amount of boron source is 1ml, rotation speed 3000r/min, rotational time 5s, finally by silicon
Piece dries 20s under the conditions of 200 DEG C；
The silicon wafer of the good boron source of positive spin coating is put into tubular diffusion furnace and carries out High temperature diffusion, diffusion temperature is controlled 950
DEG C, the BSG of the shallow doping emitter and 60nm thickness in front is formed, diffusion rear surface sheet resistance control is in 80~200ohm/sq；
Front is diffuseed to form in diffusion furnace, and emitter is lightly doped；
Positive BSG laser doping forms heavy doping emitter, is completed using BSG laser doping method, heavy doping emitter region
The sheet resistance control in domain uses wavelength for the laser of 5532nm in 50ohm/sq, laser doping, and hot spot uses square focus spot, laser
Power is in 30W, fundamental frequency 200kHz；
Wafer Backside Cleaning removes PSG；
Using ion implantation high temperature annealing process, overleaf phosphorus diffusion forms phosphorus back surface field；
Front and back sides deposition thickness is the SiO of 80nmXNyAntireflective passive film；
Positive rear electrode is printed, front electrode forms ohm with heavy doping emitter across front antireflective passive film and connects
Touching, rear electrode passes through passivating back antireflective coating and phosphorus back surface field forms Ohmic contact, to complete battery production.
Embodiment 8
The method of spin coating boron source laser doping production N-type selective emitter double-side cell:
N-type silicon chip making herbs into wool；
One layer of prewetting liquid of silicon chip surface elder generation spin coating after drying making herbs into wool when positive spin coating, the amount of every prewetting liquid are 1ml,
Then spin coating boron source, the amount of boron source are 2ml again, and rotation speed is~4000r/min, and rotational time 10s finally exists silicon wafer
5s is dried under the conditions of 300 DEG C；
The silicon wafer of the good boron source of positive spin coating is put into tubular diffusion furnace and carries out High temperature diffusion, diffusion temperature is controlled 1000
DEG C, the BSG of the shallow doping emitter and 100nm thickness in front is formed, diffusion rear surface sheet resistance control is in 80~200ohm/sq；
Front is diffuseed to form in diffusion furnace, and emitter is lightly doped；
Positive BSG laser doping forms heavy doping emitter, is completed using BSG laser doping method, heavy doping emitter region
The sheet resistance control in domain uses wavelength for the laser of 532nm in 70ohm/sq, laser doping, and hot spot uses square focus spot, laser
Power is in 50W, fundamental frequency 360kHz；
Wafer Backside Cleaning removes PSG；
Using silk-screen printing phosphorus source high-temperature annealing process, overleaf phosphorus diffusion forms phosphorus back surface field；
Front and back sides deposition thickness is the TiO of 100nm2Antireflective passive film；
Positive rear electrode is printed, front electrode forms ohm with heavy doping emitter across front antireflective passive film and connects
Touching, rear electrode passes through passivating back antireflective coating and phosphorus back surface field forms Ohmic contact, to complete battery production.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (10)
1. the method for spin coating boron source laser doping production N-type selective emitter double-side cell, which is characterized in that this method uses
The step of are as follows: N-type silicon chip making herbs into wool, front are positive light using drying after the organic boron source of spin-coating method spin coating, diffuseing to form in diffusion furnace
Doping emitter, front BSG laser doping form heavy doping emitter, Wafer Backside Cleaning removes PSG, back side phosphorus diffusion forms phosphorus back
Field, front and back sides deposition antireflective passive film, the positive rear electrode of printing complete battery production.
2. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
Be characterized in that, when positive spin coating making herbs into wool is dried after one layer of prewetting liquid of silicon chip surface elder generation spin coating, the amount of every prewetting liquid is 0.3
~1ml, then spin coating boron source, the amount of boron source are 0.5~2ml again, and rotation speed is 1000~4000r/min, rotational time 2
Silicon wafer is finally dried 5~30s by~10s under the conditions of 150~300 DEG C.
3. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
It is characterized in that, the silicon wafer of the good boron source of positive spin coating is put into tubular diffusion furnace and carries out High temperature diffusion, diffusion temperature is controlled 930
~1000 DEG C, form the BSG of the shallow doping emitter and 40~100nm thickness in front, the control of diffusion rear surface sheet resistance 80~
200ohm/sq。
4. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
It is characterized in that, positive heavy doping emitter is completed using BSG laser doping method, and the sheet resistance control of heavy doping emitter region exists
10~70ohm/sq.
5. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 4,
It is characterized in that, when laser doping uses wavelength for the laser of 355nm or 532nm, and hot spot uses square focus spot, and laser power exists
Between 20W-50W, fundamental frequency 100kHz-360kHz.
6. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
It is characterized in that, the antireflective passive film of front and back sides deposition is SiNX、SiO2、SiOXNy、Al2O3Or TiO2One of film or
It is a variety of, with a thickness of 50~100nm.
7. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
It is characterized in that, back side phosphorus doping back surface field region uses high temperature POCl3Diffusion, PECVD deposition PSG annealing, ion implanting are high
One of formation in temperature annealing or silk-screen printing phosphorus source high-temperature annealing process.
8. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 1,
It is characterized in that, front electrode and rear electrode are formed using screen printing mode.
9. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 8,
It is characterized in that, the front electrode passes through front antireflective passive film and heavy doping emitter forms Ohmic contact.
10. the method for spin coating boron source laser doping production N-type selective emitter double-side cell according to claim 8,
It is characterized in that, the rear electrode passes through passivating back antireflective coating and phosphorus back surface field forms Ohmic contact.
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