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CN102842646A - Preparation method of interdigitated back-contact battery based on N-type substrate - Google Patents

Preparation method of interdigitated back-contact battery based on N-type substrate Download PDF

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CN102842646A
CN102842646A CN2012101710070A CN201210171007A CN102842646A CN 102842646 A CN102842646 A CN 102842646A CN 2012101710070 A CN2012101710070 A CN 2012101710070A CN 201210171007 A CN201210171007 A CN 201210171007A CN 102842646 A CN102842646 A CN 102842646A
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silicon wafer
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柯航
汤安民
梅晓东
王学林
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Zhejiang Jinko Solar Co Ltd
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Abstract

本发明涉及一种基于N型衬底的IBC电池的制备方法,使用激光掺杂的方法来制备发射极,具体包括以下步骤:硅片表面织构化处理、硅片表面镀介质膜、用激光对背表面局部重掺杂N+区和P+区、用激光对正表面全部轻掺杂N+区、去除表面介质膜、硅片表面制备钝化膜、硅片表面制备减反射膜并完成正负电极制备,本发明通过对表面旋涂有相应杂质源的硅片进行激光扫描,利用激光的高能量使硅片表面加热到熔融状态,从而使杂质能很好的扩散到体内,能很好的控制掺杂的区域,未掺杂的地方不会产生晶格缺陷,工艺简单合理安全可靠。

Figure 201210171007

The invention relates to a preparation method of an IBC battery based on an N-type substrate, which uses a laser doping method to prepare an emitter, and specifically includes the following steps: texturing the surface of a silicon wafer, coating a dielectric film on the surface of a silicon wafer, and using a laser Locally heavily doped N + region and P + region on the back surface, lightly doped all N + regions on the front surface with laser, removed surface dielectric film, prepared passivation film on silicon wafer surface, prepared anti-reflection film on silicon wafer surface and completed The preparation of positive and negative electrodes, the present invention scans the silicon wafer with the corresponding impurity source spin-coated on the surface, and uses the high energy of the laser to heat the surface of the silicon wafer to a molten state, so that the impurities can be well diffused into the body, and can be easily The doped area is well controlled, and the undoped area will not produce lattice defects, and the process is simple, reasonable, safe and reliable.

Figure 201210171007

Description

一种基于N型衬底的IBC电池的制备方法A kind of preparation method of IBC battery based on N-type substrate

技术领域 technical field

本发明属于太阳电池技术领域,具体涉及一种基于N型衬底的IBC电池的制备方法。 The invention belongs to the technical field of solar cells, and in particular relates to a preparation method of an IBC cell based on an N-type substrate.

背景技术 Background technique

当电力、煤炭、石油等不可再生能源频频告急,能源问题日益成为制约国际社会经济发展的瓶颈时,发展可再生能源已经成为全球性的重大课题。这其中,太阳能拥有取之不尽、用之不竭的巨大优势,因此太阳能是可再生能源的一个主要方向。太阳能电池由于其广泛的应用,尤其是能应用于边远地区、高山、沙漠,制造大型电站而备受人们的青睐。 When electricity, coal, oil and other non-renewable energy resources are frequently running out, and energy issues have increasingly become a bottleneck restricting the development of the international society and economy, the development of renewable energy has become a major global issue. Among them, solar energy has the huge advantage of being inexhaustible and inexhaustible, so solar energy is a main direction of renewable energy. Solar cells are favored by people because of their wide range of applications, especially in remote areas, mountains, and deserts to manufacture large-scale power stations.

太阳能电池的结构简单来说就是一个P-N结,当太阳光照射在半导体P-N结上时,形成新的电子-空穴对。这些电子和空穴在P-N结电场的作用下向两区流动,即电子由P区流向N区而空穴则由N区流向P区,接通电路后就形成电流。 The structure of a solar cell is simply a P-N junction. When sunlight shines on a semiconductor P-N junction, new electron-hole pairs are formed. These electrons and holes flow to the two regions under the action of the electric field of the P-N junction, that is, the electrons flow from the P region to the N region, and the holes flow from the N region to the P region. After the circuit is turned on, a current is formed.

目前大规模生产的太阳能电池材料主要是用基体为p型的晶体硅材料,然后通过高温的磷扩散来形成P-N结。其量产的生产工艺稳定性好,但是转换效率已经几乎达到瓶颈。所以,人们开始研发低成本、高效率的太阳能电池。 The current mass-produced solar cell materials mainly use p-type crystalline silicon as the substrate, and then form a P-N junction through high-temperature phosphorus diffusion. The production process of mass production is stable, but the conversion efficiency has almost reached the bottleneck. Therefore, people began to develop low-cost, high-efficiency solar cells.

由于常规的太阳能电池受光面约有8%左右的面积被金属栅线所遮挡,为了减少正面的遮光面积,增加电池的光生电流,人们考虑把正电极和负电极都放在电池的背面,成为背接触电池。IBC电池也是背接触电池的一种。 Since about 8% of the light-receiving surface of conventional solar cells is blocked by metal grid lines, in order to reduce the shading area on the front and increase the photo-generated current of the battery, people consider placing both the positive electrode and the negative electrode on the back of the battery to become Back contacts the battery. IBC battery is also a type of back contact battery.

IBC电池早在1977年就有研究者开始研究,直到现在任然是太阳电池行业研究的热点。相对于常规的硅电池,IBC电池的优势很明显,主要可以表现在以下几个方面:(1)IBC电池的基体材料为n型晶体硅,少子寿命高,适用于制备高效电池,特别是对于IBC电池这种p-n结在背表面的电池结构,因为产生于前表面的光生载流子必须要迁移到电池背表面的p-n结才能被利用,较高的少子寿命是减少光生载流子在太阳电池表面和体内复合的保证;(2)n型基体的硼含量极低,因此由硼氧对造成的光致衰减没有p型基体材料明显,对封装后组件的效率提升更为明显;(3)IBC电池的正面没有电极,减少了遮光面积,增加了光生电流,电池的正负电极呈交指状的分布在电池的背面;(4)IBC电池易于封装,和常规电池相比,无需把前一片的负极交叉接到后一片的正极,易于操作。同时美观均一,满足消费者审美要求。 IBC batteries have been studied by researchers as early as 1977, and until now it is still a hot spot in the solar cell industry. Compared with conventional silicon batteries, the advantages of IBC batteries are obvious, mainly in the following aspects: (1) The base material of IBC batteries is n-type crystalline silicon, which has a high minority carrier life and is suitable for the preparation of high-efficiency batteries, especially for The p-n junction of the IBC battery is on the back surface of the battery structure, because the photo-generated carriers generated on the front surface must migrate to the p-n junction on the back surface of the battery to be used, and the higher minority lifetime is to reduce the photo-generated carriers in the sun. Guarantee of battery surface and internal recombination; (2) The boron content of the n-type matrix is extremely low, so the light-induced attenuation caused by the boron-oxygen pair is not as obvious as that of the p-type matrix material, and the efficiency of the packaged components is improved more significantly; (3) ) There is no electrode on the front of the IBC battery, which reduces the shading area and increases the photogenerated current. The positive and negative electrodes of the battery are distributed on the back of the battery in a finger shape; The negative pole of the previous piece is crossed to the positive pole of the latter piece, which is easy to operate. At the same time, the appearance is uniform and meets the aesthetic requirements of consumers.

常规的制备p型发射极的方法是使用高温扩散硼源,具体就是通过采用高纯N2携带BBr3的方法。和POCl3类似,BBr3会反应生成B2O3,在高温的情况下扩散进入硅片内部形成p型发射极。但是,这种方法存在几个问题:(1)和气态的P2O5不同,B2O3的沸点较高,在高温下还是液态,难以均匀地覆盖在硅片表面,因此扩散的均匀性难以控制。(2)由于硼扩散的温度比磷扩散还要高,不仅浪费资源,而且对硅片影响很大,导致硅片少子寿命下降严重。 The conventional method of preparing a p-type emitter is to use a high-temperature diffused boron source, specifically by using high-purity N 2 to carry BBr 3 . Similar to POCl 3 , BBr 3 will react to form B 2 O 3 , which diffuses into the silicon wafer to form a p-type emitter at high temperature. However, there are several problems with this method: (1) Unlike gaseous P 2 O 5 , B 2 O 3 has a higher boiling point and is still liquid at high temperatures, so it is difficult to evenly cover the surface of the silicon wafer, so the uniformity of diffusion Sex is hard to control. (2) Since the temperature of boron diffusion is higher than that of phosphorus, it not only wastes resources, but also has a great impact on silicon wafers, resulting in a serious decrease in the minority carrier lifetime of silicon wafers.

把激光技术应用于太阳电池的研发早已不是新闻,其选择性、非接触式的加工工艺也已经超越了其他工艺。使用激光技术能很好的简化IBC电池的生产流程。 The application of laser technology to the research and development of solar cells is no longer news, and its selective and non-contact processing technology has surpassed other processes. The use of laser technology can greatly simplify the production process of IBC batteries.

发明内容 Contents of the invention

本发明的目的在于提供一种基于N型衬底的由激光掺杂制备发射极的IBC电池制备方法,该方法安全可靠、成本低,可以适用于产线大规模生产。 The purpose of the present invention is to provide an IBC battery preparation method based on an N-type substrate by laser doping to prepare an emitter. The method is safe, reliable, and low in cost, and can be applied to large-scale production in production lines.

为达到上述目的,本发明采取的技术方案是:一种基于N型衬底的IBC太阳电池的制备方法,其特征在于,使用激光掺杂的方法来制备发射极,具体包括以下步骤: In order to achieve the above object, the technical solution adopted by the present invention is: a method for preparing an IBC solar cell based on an N-type substrate, which is characterized in that the emitter is prepared by using a laser doping method, which specifically includes the following steps:

⑴对晶体硅片进行表面织构化处理并进行化学清洗,然后在正背两面制备介质膜,使硅片表面具有亲水性; (1) Texturize the surface of the crystalline silicon wafer and perform chemical cleaning, and then prepare a dielectric film on the front and back sides to make the surface of the silicon wafer hydrophilic;

⑵在涂有磷源的晶体硅背表面利用激光扫描的方法制备局部N+重掺杂结构,并清洗干燥处理; (2) On the back surface of crystalline silicon coated with phosphorus source, a local N + heavily doped structure is prepared by laser scanning method, and cleaned and dried;

⑶在涂有硼源的晶体硅背表面利用激光扫描的方法制备局部P+重掺杂结构,并清洗干燥处理; (3) Prepare a local P + heavily doped structure on the back surface of the crystalline silicon coated with a boron source by laser scanning, and clean and dry it;

⑷在涂有磷源的晶体硅正表面利用全激光扫描的方法制备N+轻掺杂结构; (4) Prepare N + lightly doped structure on the front surface of crystalline silicon coated with phosphorus source by full laser scanning method;

⑸去除硅片正背两面的介质膜,并清洗干燥处理; ⑸Remove the dielectric film on the front and back of the silicon wafer, and clean and dry it;

⑹在硅片正背两面制备钝化膜; ⑹Preparation of passivation film on both sides of the silicon wafer;

⑺在硅片正背两面制备减反射膜; (7) Prepare anti-reflection coatings on both sides of the silicon wafer;

⑻在硅片背面制作电池正、负电极;并烧结。 ⑻ Fabricate the positive and negative electrodes of the battery on the back of the silicon wafer; and sinter them.

在上述制备方法过程中,对所述步骤⑵、⑶和⑷的次序可以进行任意调整。 During the above preparation method, the order of the steps (2), (3) and (4) can be adjusted arbitrarily.

作为一种优选,所述步骤⑵和步骤⑷所述的磷源为磷酸与水和酒精的混合溶液或者磷硅玻璃。 As a preference, the phosphorus source in step (2) and step (4) is a mixed solution of phosphoric acid, water and alcohol or phosphosilicate glass.

作为一种优选,所述步骤⑶所述的硼源为硼酸溶液或者硼硅玻璃。 As a preference, the boron source in step (3) is boric acid solution or borosilicate glass.

作为一种优选,所述步骤⑴所述的介质膜为湿化学氧化或干法氧化生成的SiO2或者SiNx膜。 As a preference, the dielectric film in step (1) is SiO2 or SiNx film produced by wet chemical oxidation or dry oxidation.

作为一种优选,所述步骤⑵、⑶和⑷所述的激光扫描的激光参数为:功率1W-10W、波长200nm-600nm的脉冲。 As a preference, the laser parameters of the laser scanning described in the steps (2), (3) and (4) are: pulses with a power of 1W-10W and a wavelength of 200nm-600nm.

作为一种优选,所述步骤⑹所述的钝化膜包括SiO2、Al2O3或α-Si膜。 As a preference, the passivation film in step (6) includes SiO 2 , Al 2 O 3 or α-Si film.

作为一种优选,所述步骤⑺所述的减反射膜包括SiNx、TiO2或MgF2膜。 As a preference, the anti-reflection film in step (7) includes SiNx, TiO 2 or MgF 2 film.

作为一种优选,所述步骤⑻所述的制备电池正、负电极的方法包括丝网印刷、电镀或化学镀。 As a preference, the method for preparing the positive and negative electrodes of the battery described in step (8) includes screen printing, electroplating or electroless plating.

本发明采用基体材料为N型晶体硅片,其少子寿命高并且光致衰减小,对制备电池和封装组件都有优势。表面织构化的目的是增加硅片对光的吸收,起到“陷光”的作用;化学清洗的目的是去除硅片表面的杂质;介质膜的作用是增加硅片表面的亲水性,使后面旋涂的磷源及硼源能均匀的分布在硅片表面。硅片表面旋涂的磷源和硼源安全可靠、污染小,为激光掺杂提供足够的掺杂剂,不用经过高温过程且分布均匀,对掺杂后的均匀性有所保证;同时采用激光掺杂制备发射极,和传统的炉管扩散相比方便快捷,并能很好的控制激光掺杂的区域,控制方阻,便于大规模的生产。 The invention adopts N-type crystalline silicon chip as the base material, which has high minority carrier life and small light-induced attenuation, which has advantages for preparing batteries and packaging components. The purpose of surface texturing is to increase the light absorption of the silicon wafer and play the role of "light trapping"; the purpose of chemical cleaning is to remove impurities on the surface of the silicon wafer; the function of the dielectric film is to increase the hydrophilicity of the silicon wafer surface, The phosphorus source and the boron source that will be spin-coated later can be evenly distributed on the surface of the silicon wafer. The phosphorus source and boron source spin-coated on the surface of the silicon wafer are safe and reliable, with little pollution, providing enough dopant for laser doping, without going through high temperature process and uniform distribution, which guarantees the uniformity of doping; at the same time, laser Doping to prepare the emitter is more convenient and faster than the traditional furnace tube diffusion, and can well control the laser doped area, control the square resistance, and facilitate large-scale production.

本发明采用钝化膜钝化电池的前后表面能有效的降低表面少数载流子的复合速率,提高表面少子寿命,同时背表面的双层膜结构能提高对透过硅片的长波段的光的反射率。而在正反两面制备减反射膜的目的则是为了减少光子的反射,增加对光子的吸收,增加光生电流进而增加电池最终的转换效率。电池的正、负电极均制作于的背面,减少了遮光面积,增加了光生电流,能更好的收集硅片产生的电流,同时在金属与硅片之间形成良好的欧姆接触。 The present invention adopts the passivation film to passivate the front and rear surfaces of the battery, which can effectively reduce the recombination rate of minority carriers on the surface and improve the lifetime of minority carriers on the surface. reflectivity. The purpose of preparing anti-reflection coatings on both sides is to reduce the reflection of photons, increase the absorption of photons, increase the photogenerated current and increase the final conversion efficiency of the battery. Both the positive and negative electrodes of the battery are made on the back of the battery, which reduces the shading area, increases the photogenerated current, and can better collect the current generated by the silicon wafer, while forming a good ohmic contact between the metal and the silicon wafer.

本发明采用激光掺杂制备发射极。利用激光对表面旋涂有相应杂质源的硅片进行扫描,原理就是利用激光的高能量使硅片表面加热到熔融状态,从而使杂质能很好的扩散到体内。这种方法工艺简单、设备安全,并且对没有掺杂的地方不会产生晶格缺陷。采用激光掺杂的方法来制备IBC电池背表面的p+层及n+层的最大的优势就是能很好的控制掺杂的区域,仅在激光扫描过的区域掺杂即可。 The invention adopts laser doping to prepare emitter. Using a laser to scan the silicon wafer with the corresponding impurity source spin-coated on the surface, the principle is to use the high energy of the laser to heat the surface of the silicon wafer to a molten state, so that the impurities can be well diffused into the body. This method is simple in process, safe in equipment, and does not produce lattice defects in places without doping. The biggest advantage of using the laser doping method to prepare the p+ layer and n+ layer on the back surface of the IBC battery is that the doped area can be well controlled, and only the area scanned by the laser can be doped.

附图说明 Description of drawings

图1为本发明一种实施方式基于N型衬底的IBC太阳电池的制备流程示意图。 FIG. 1 is a schematic diagram of the preparation process of an IBC solar cell based on an N-type substrate according to an embodiment of the present invention.

图2为本发明一种实施方式的一种基于N型衬底的IBC太阳电池的示意图。其中,1为电池的正极,2为电池的负极。 Fig. 2 is a schematic diagram of an IBC solar cell based on an N-type substrate according to an embodiment of the present invention. Among them, 1 is the positive pole of the battery, and 2 is the negative pole of the battery.

具体实施方式 Detailed ways

以下列举具体实施例对本发明进行说明。需要指出的是,实施例只适用于对本发明作进一步说明,不代表本发明的保护范围,其他人根据本发明的提示做出的非本质的修改和调整,仍属于本发明的保护范围。 The following specific examples are given to illustrate the present invention. It should be pointed out that the examples are only applicable to further explain the present invention, and do not represent the protection scope of the present invention. Non-essential modifications and adjustments made by others according to the hints of the present invention still belong to the protection scope of the present invention.

实施例1: Example 1:

本发明提出的一种基于激光掺杂制备背表面PN结的N型IBC高效太阳电池的制备方法,下面以N型单晶硅太阳电池为例,说明其制备步骤如下: The present invention proposes a method for preparing an N-type IBC high-efficiency solar cell based on laser doping to prepare a PN junction on the back surface. Taking an N-type monocrystalline silicon solar cell as an example, the preparation steps are as follows:

⑴对N型硅片采用氢氧化钠、IPA以及制绒添加剂的混合水溶液(其中:氢氧化钠质量分数为1.3%,IPA体积分数为0.3%,制绒添加剂体积分数为0.03%)进行表面处理,制作大小均一的金字塔形状的绒面结构;再采用PECVD法(等离子体增强化学气相沉积)在正背两表面制备的SiNx介质膜。 (1) Surface treatment of N-type silicon wafers with a mixed aqueous solution of sodium hydroxide, IPA and texturing additives (among them: sodium hydroxide mass fraction is 1.3%, IPA volume fraction is 0.3%, and texturing additive volume fraction is 0.03%) , to make a pyramid-shaped suede structure of uniform size; and then use PECVD (plasma enhanced chemical vapor deposition) to prepare SiNx dielectric films on the front and back surfaces.

⑵在硅片背表面旋涂磷酸-乙醇混合水溶液(磷酸∶乙醇∶水=24∶9∶10);然后用激光对硅片背表面进行局部N+重掺杂,采用波长为355nm的Paladin UV紫外光源,扫描速度为3m/s,功率为4W,把激光聚焦到直径为30um的激光源对硅片表面进行扫描形成局部N+重掺杂制成发射极,并使之与金属电极形成很好的欧姆接触;再清洗并吹干。要求方块电阻不大于60Ω/□。 (2) Spin-coat a phosphoric acid-ethanol mixed aqueous solution (phosphoric acid: ethanol: water = 24:9:10) on the back surface of the silicon wafer; then use a laser to perform local N + heavy doping on the back surface of the silicon wafer, using Paladin UV with a wavelength of 355nm Ultraviolet light source, with a scanning speed of 3m/s and a power of 4W, focuses the laser to a laser source with a diameter of 30um to scan the surface of the silicon wafer to form a local N + heavily doped emitter, and make it form a close contact with the metal electrode Good ohmic contact; wash and blow dry again. It is required that the sheet resistance is not greater than 60Ω/□.

⑶在硅片背表面旋涂浓度为5%的硼酸水溶液;然后用激光对硅片背表面进行局部P+重掺杂,采用波长为355nm的Paladin UV紫外光源,扫描速度为2m/s,功率为4W,把激光聚焦到直径为30um的激光源对硅片表面进行扫描形成局部P+重掺杂制成发射极;再清洗并吹干。要求方块电阻不大于40Ω/□。 (3) Spin-coat a boric acid aqueous solution with a concentration of 5% on the back surface of the silicon wafer; then carry out local P + heavy doping on the back surface of the silicon wafer with a laser, using a Paladin UV ultraviolet light source with a wavelength of 355nm, a scanning speed of 2m/s, and a power For 4W, focus the laser to a laser source with a diameter of 30um to scan the surface of the silicon wafer to form a local P + heavily doped emitter; then clean and dry. It is required that the sheet resistance is not greater than 40Ω/□.

⑷在硅片正表面旋涂磷酸-乙醇混合水溶液;然后用激光对硅片正表面进行局部重掺杂,采用波长为355nm的Paladin UV紫外光源,扫描速度为5m/s,功率为3W,把激光聚焦到直径为30um的激光源对硅片表面进行扫描形成N+轻掺杂制成发射极;再用体积分数为10%的HF溶液把硅片背表面和正表面的SiNx介质膜清洗掉,清洗吹干。要求方块电阻不低于100Ω/□。 (4) Spin-coat a phosphoric acid-ethanol mixed aqueous solution on the front surface of the silicon wafer; then use a laser to locally heavily dope the front surface of the silicon wafer, using a Paladin UV ultraviolet light source with a wavelength of 355nm, a scanning speed of 5m/s, and a power of 3W. The laser is focused to a laser source with a diameter of 30um to scan the surface of the silicon wafer to form N + lightly doped to make the emitter; then use HF solution with a volume fraction of 10% to clean the SiNx dielectric film on the back surface and front surface of the silicon wafer, Rinse and blow dry. The sheet resistance is required to be no less than 100Ω/□.

⑸采用炉管干氧化法在硅片正背两面沉积SiO2膜,膜层的厚度约为10nm,具有很好的钝化效果。 (5) Deposit SiO 2 film on the front and back sides of the silicon wafer by furnace tube dry oxidation method, the thickness of the film layer is about 10nm, which has a good passivation effect.

⑹采用PECVD法在硅片正背两面制备SiNx减反射膜。 (6) SiNx anti-reflection coatings were prepared on both sides of the silicon wafer by PECVD method.

⑺采用丝网印刷在硅片背面制作电池正、负电极并烧结,完成整个电池的制备过程。 ⑺The positive and negative electrodes of the battery are fabricated on the back of the silicon wafer by screen printing and sintered to complete the entire battery preparation process.

实施例2: Example 2:

⑴对晶体硅片进行表面织构化处理,并在正背两表面制备SiNx膜; (1) Texturize the surface of the crystalline silicon wafer, and prepare SiNx films on the front and back surfaces;

⑵在涂有磷酸的晶体硅背表面采用波长为532nm的AVIA绿光扫描的方法制备局部N+重掺杂结构,并清洗吹干; (2) On the back surface of crystalline silicon coated with phosphoric acid, a local N + heavily doped structure was prepared by scanning with AVIA green light with a wavelength of 532nm, and cleaned and dried;

⑶在涂有硼酸的晶体硅背表面采用波长为532nm的AVIA绿光扫描的方法制备局部P+重掺杂结构,并清洗吹干; (3) On the back surface of crystalline silicon coated with boric acid, a local P + heavily doped structure was prepared by scanning with AVIA green light with a wavelength of 532nm, and cleaned and dried;

⑷在涂有磷酸的晶体硅正表面采用波长为532nm的AVIA绿光扫描的方法制备N+轻掺杂结构,并用体积分数为10%的HF溶液清洗去除正背两面的SiNx膜,清洗吹干; (4) On the front surface of phosphoric acid-coated crystalline silicon, the N + lightly doped structure is prepared by scanning AVIA green light with a wavelength of 532nm, and the SiNx film on both sides of the front and back is removed by cleaning with HF solution with a volume fraction of 10%, and then cleaned and dried ;

⑸采用炉管干氧化法在硅片正背两面沉积SiO2膜; (5) Deposit SiO 2 films on the front and back sides of silicon wafers by furnace tube dry oxidation method;

⑹在硅片正背两面制备SiNx减反射膜; ⑹ Prepare SiNx anti-reflection coatings on both sides of the silicon wafer;

⑺采用丝网印刷在硅片背面制作电池正、负电极并烧结,完成整个电池的制备过程。 ⑺The positive and negative electrodes of the battery are fabricated on the back of the silicon wafer by screen printing and sintered to complete the entire battery preparation process.

本实施例除上述第⑵、⑶和⑷步中所使用的激光与实施例1不同以外,其他各步均与实施例1一致。 In this embodiment, except that the laser used in the above-mentioned (2), (3) and (4) steps is different from that of embodiment 1, other steps are consistent with embodiment 1.

实施例3: Example 3:

⑴对晶体硅片进行表面织构化处理,并在正背两表面制备SiNx膜; (1) Texturize the surface of the crystalline silicon wafer, and prepare SiNx films on the front and back surfaces;

⑵在涂有磷酸的晶体硅背表面利用波长为355nm的Paladin UV紫外扫描的方法制备局部N+重掺杂结构,并清洗吹干; (2) On the back surface of crystalline silicon coated with phosphoric acid, a local N + heavily doped structure was prepared by using Paladin UV ultraviolet scanning method with a wavelength of 355nm, and cleaned and dried;

⑶在涂有硼酸的晶体硅背表面利用波长为355nm的Paladin UV紫外扫描的方法制备局部P+重掺杂结构,并清洗吹干; (3) On the back surface of crystalline silicon coated with boric acid, a partial P + heavily doped structure was prepared by using a Paladin UV ultraviolet scanning method with a wavelength of 355 nm, and cleaned and dried;

⑷在涂有磷酸的晶体硅正表面利用波长为355nm的Paladin UV紫外扫描的方法制备N+轻掺杂结构,并用浓度为10%的HF水溶液清洗去除表背面的SiNx膜,清洗吹干; (4) On the front surface of crystalline silicon coated with phosphoric acid, N + lightly doped structure was prepared by using Paladin UV ultraviolet scanning method with a wavelength of 355nm, and the SiNx film on the front and back was removed by cleaning with HF aqueous solution with a concentration of 10%, and then cleaned and dried;

⑸采用炉管干氧化法在硅片正背两面沉积SiO2膜; (5) Deposit SiO 2 films on the front and back sides of silicon wafers by furnace tube dry oxidation method;

⑹在硅片正背两面制备SiNx减反射膜; ⑹ Prepare SiNx anti-reflection coatings on both sides of the silicon wafer;

⑺利用电镀的方法在硅片背面制作电池正、负电极,并采用快速热退火工艺,完成整个电池的制备过程。 ⑺The positive and negative electrodes of the battery are made on the back of the silicon wafer by electroplating, and the rapid thermal annealing process is used to complete the entire battery preparation process.

本实施例除上述第⑺步电池正、负电极制备方法与实施例1不同以外,其他各步均与实施例1一致。 In this embodiment, except that the preparation method of the positive and negative electrodes of the battery in the above step (7) is different from that of Embodiment 1, the other steps are consistent with Embodiment 1.

实施例4: Example 4:

采用化学镀的方法在硅片背面制作电池正、负电极,并采用快速热退火工艺,完成整个电池的制备过程;其他各步均与实施例3一致。 The positive and negative electrodes of the battery were fabricated on the back of the silicon wafer by electroless plating, and a rapid thermal annealing process was used to complete the entire battery preparation process; other steps were consistent with Example 3.

实施例5: Example 5:

采用原子层沉积的方法在硅片两面沉积Al2O3钝化膜;其他的各步均与实施例1一致。 The Al 2 O 3 passivation film was deposited on both sides of the silicon wafer by atomic layer deposition; other steps were consistent with that of Example 1.

实施例6: Embodiment 6:

采用原子层沉积的方法在硅片两面沉积Al2O3钝化膜;其他的各步均与实施例2一致。 The Al 2 O 3 passivation film was deposited on both sides of the silicon wafer by the method of atomic layer deposition; other steps were consistent with the embodiment 2.

实施例7: Embodiment 7:

采用原子层沉积的方法在硅片两面沉积Al2O3钝化膜;其他的各步均与实施例3一致。 The Al 2 O 3 passivation film was deposited on both sides of the silicon wafer by atomic layer deposition; other steps were consistent with those in Example 3.

实施例8: Embodiment 8:

采用原子层沉积的方法在硅片两面沉积Al2O3钝化膜;其他的各步均与实施例4一致。 The Al 2 O 3 passivation film was deposited on both sides of the silicon wafer by atomic layer deposition; other steps were consistent with that of Example 4.

本发明并不局限于上述实施方式,如果对本发明的各种改动或变形不脱离本发明的精神和范围,倘若这些改动和变型属于本发明的权利要求和等同技术范围之内,则本发明也包含这些改动和类型。 The present invention is not limited to the above-mentioned embodiments, if the various changes or modifications of the present invention do not depart from the spirit and scope of the present invention, if these changes and modifications belong to the claims and equivalent technical scope of the present invention, then the present invention is also These changes and types are included.

Claims (9)

1.一种基于N型衬底的IBC太阳电池的制备方法,其特征在于,使用激光掺杂的方法来制备发射极,具体包括以下步骤: 1. A method for preparing an IBC solar cell based on an N-type substrate, characterized in that, using a laser doping method to prepare an emitter, specifically comprising the following steps: ⑴对晶体硅片进行表面织构化处理并进行化学清洗,然后在正背两面制备介质膜,使硅片表面具有亲水性; (1) Texturize the surface of the crystalline silicon wafer and perform chemical cleaning, and then prepare a dielectric film on the front and back sides to make the surface of the silicon wafer hydrophilic; ⑵在涂有磷源的晶体硅背表面利用激光扫描的方法制备局部N+重掺杂结构,并清洗干燥处理; (2) On the back surface of crystalline silicon coated with phosphorus source, a local N + heavily doped structure is prepared by laser scanning method, and cleaned and dried; ⑶在涂有硼源的晶体硅背表面利用激光扫描的方法制备局部P+重掺杂结构,并清洗干燥处理; (3) Prepare a local P + heavily doped structure on the back surface of the crystalline silicon coated with a boron source by laser scanning, and clean and dry it; ⑷在涂有磷源的晶体硅正表面利用全激光扫描的方法制备N+轻掺杂结构; (4) Prepare N + lightly doped structure on the front surface of crystalline silicon coated with phosphorus source by full laser scanning method; ⑸去除硅片正背两面的介质膜,并清洗干燥处理; ⑸Remove the dielectric film on the front and back of the silicon wafer, and clean and dry it; ⑹在硅片两面制备钝化膜; ⑹ Preparation of passivation film on both sides of the silicon wafer; ⑺在硅片两面制备减反射膜; (7) Prepare anti-reflection coatings on both sides of the silicon wafer; ⑻在硅片背面制作电池正、负电极;并烧结。 ⑻ Fabricate the positive and negative electrodes of the battery on the back of the silicon wafer; and sinter them. 2.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,对所述步骤⑵、⑶和⑷的次序进行任意调整。 2. The method for preparing an IBC solar cell based on an N-type substrate according to claim 1, wherein the order of steps (2), (3) and (4) is adjusted arbitrarily. 3.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑵和步骤⑷所述的磷源为磷酸与水和酒精的混合溶液或者磷硅玻璃。 3. the preparation method of the IBC solar cell based on N-type substrate according to claim 1, is characterized in that, the phosphorus source described in step (2) and step (4) is the mixed solution of phosphoric acid and water and alcohol or phosphorus silicon Glass. 4.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑶所述的硼源为硼酸溶液或者硼硅玻璃。 4. the preparation method of the IBC solar cell based on N-type substrate according to claim 1, is characterized in that, the boron source described in said step (3) is boric acid solution or borosilicate glass. 5.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑴所述的介质膜为湿化学氧化或干法氧化生成的SiO2或者SiNx膜。 5. the preparation method of the IBC solar cell based on N-type substrate according to claim 1, is characterized in that, the described dielectric film of described step (1) is the SiO that wet chemical oxidation or dry method oxidation generate 2 or SiNx film . 6.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑵、⑶和⑷所述的激光扫描的激光参数为:功率1W-10W、波长200nm-600nm的脉冲。 6. the preparation method of the IBC solar cell based on N-type substrate according to claim 1, is characterized in that, the laser parameter of the described laser scanning of described step (2), (3) and (4) is: power 1W-10W, wavelength 200nm-600nm pulse. 7.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑹所述的钝化膜包括SiO2、Al2O3或α-Si膜。 7 . The method for preparing an IBC solar cell based on an N-type substrate according to claim 1 , wherein the passivation film in step (6) comprises SiO 2 , Al 2 O 3 or α-Si film. 8.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑺所述的减反射膜包括SiNx、TiO2或MgF2膜。 8. The method for preparing an IBC solar cell based on an N-type substrate according to claim 1, wherein the anti-reflection film in step (7) comprises SiNx, TiO 2 or MgF 2 film. 9.根据权利要求1所述的基于N型衬底的IBC太阳电池的制备方法,其特征在于,所述步骤⑻所述的制备电池正、负电极的方法包括丝网印刷、电镀或化学镀。 9. the preparation method of the IBC solar cell based on N-type substrate according to claim 1 is characterized in that, the method for preparing battery positive and negative electrodes described in said step (8) comprises screen printing, electroplating or electroless plating .
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CN113363354A (en) * 2021-06-04 2021-09-07 浙江爱旭太阳能科技有限公司 Preparation method of P-type back contact crystalline silicon solar cell
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