CN109690767A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN109690767A CN109690767A CN201680088933.8A CN201680088933A CN109690767A CN 109690767 A CN109690767 A CN 109690767A CN 201680088933 A CN201680088933 A CN 201680088933A CN 109690767 A CN109690767 A CN 109690767A
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Abstract
Have: top electrode is set to the top of lower electrode；Semiconductor chip is set between the lower electrode and the top electrode；Pressure pad is overlappingly arranged between the lower electrode and the top electrode with the semiconductor chip；And spiral conductor, it is overlappingly arranged between the lower electrode and the top electrode with the semiconductor chip and the pressure pad, the spiral conductor has upside spiral conductor and downside spiral conductor, the lower end in contact of the downside spiral conductor and the upside spiral conductor, it is opposite with the upside spiral conductor, by spiral conductor on the upside of this and on the downside of this, spiral conductor forms slot, so that the sense of current that spiral conductor flows on the upside of this when overlook view is consistent with the sense of current that spiral conductor flows on the downside of this.
Description
Technical field
The present invention relates to semiconductor devices used in on-off in such as high current etc..
Background technique
Pressing type power semiconductor modular is disclosed in patent document 1.It discloses in Fig. 1 of patent document 1 and has in inside
The pressing type power semiconductor modular of standby multiple semiconductor devices.In 1 semiconductor device, there are 1 semiconductor chips.Partly lead
Body chip is, for example, IGBT.By making the upper and lower surfaces crimping of each element of the semiconductor device, partly led to realize
The electrical connection of body chip.In order to need conductive path in each semiconductor chip to the uniformly applied pressure of multiple semiconductor chips
The clearance and spring of diameter construct.
Pressure pad is for assigning the clearance and guaranteeing electrical connection.Pressure pad is directed to the powered-on capacity of usual electric current sometimes for increasing
And it is arranged multiple.Spring is set between pressure pad sometimes, but the spring rises in the case where having powered as inductance
Effect becomes high impedance especially for high frequency.Therefore, electric current is not flowed through in spring.
Patent document 1: Japanese Unexamined Patent Application Publication 2004-528724 bulletin
Summary of the invention
If semiconductor chip becomes short-circuit condition, the top electrode in the busbar as upside and the remittance as downside
The lower electrode of stream item flows through contrary electric current.Because the electromagnetic force that the electric current generates makes top electrode and lower electrode generate repulsion.
If making the distance between top electrode and lower electrode become larger due to the repulsion, sometimes between the upper and lower electrodes
Component is peeling-off, disconnects circuit.In particular, worrying the removing at the weak semiconductor chip surface of attachment force.
Furthermore, it is possible to expect, distribute raw electric arc in the disconnection portion of circuit, device is heated due to the electric arc, thus
Environmental gas expansion or solids gasification and cause to explode.Therefore, it is necessary to be equipped with firm Antiexplosive structure to module, this becomes small
The obstruction of type and low price will be because.Additionally, it is sometimes desirable to using galvanic areas to limit, or need separately to set
Set short-circuit protection.
The present invention is exactly to propose to solve the above-mentioned problems, and its purpose is to provide a kind of semiconductor devices, should be partly
Conductor device can reduce the repulsion for being applied to top electrode and lower electrode, prevent component between the upper and lower electrodes from generating
Removing.
Semiconductor device according to the present invention is characterized in that having: lower electrode；Top electrode is set to the lower electricity
The top of pole；Semiconductor chip is set between the lower electrode and the top electrode；Pressure pad is powered in the lower electrode with this
Overlappingly it is arranged between pole with the semiconductor chip；And spiral conductor, and it should be partly between the lower electrode and the top electrode
Conductor chip and the pressure pad are overlappingly arranged, which has upside spiral conductor and downside spiral conductor, the downside
The lower end in contact of spiral conductor and the upside spiral conductor, it is opposite with the upside spiral conductor, pass through spiral conductor on the upside of this
With the downside spiral conductor formed slot so that when overlook view on the upside of this spiral conductor flow sense of current and
The sense of current of downside spiral conductor flowing is consistent.
Other feature of the invention will become clear below.
The effect of invention
According to the present invention, the repulsion for being applied to lower electrode and top electrode is reduced using the gravitation generated in spiral conductor,
Therefore, it can prevent component between the upper and lower electrodes from generating removing.
Detailed description of the invention
Fig. 1 is the cross-sectional view of semiconductor device involved in embodiment 1.
Fig. 2 is the figure for indicating downside spiral conductor and upside spiral conductor.
Fig. 3 is the cross-sectional view of spiral conductor.
Fig. 4 is the partial sectional view of downside spiral conductor and upside spiral conductor.
Fig. 5 is the figure for schematically showing the flow direction of the electric current in spiral conductor.
Fig. 6 is the figure for indicating the assembling example of semiconductor device involved in embodiment 1.
Fig. 7 is the cross-sectional view of the spiral conductor of semiconductor device involved in embodiment 2.
Fig. 8 is the figure for indicating the downside spiral conductor and upside spiral conductor of semiconductor device involved in embodiment 3.
Fig. 9 is the cross-sectional view of semiconductor device involved in embodiment 4.
Specific embodiment
Semiconductor device involved in embodiments of the present invention is illustrated referring to attached drawing.For identical or corresponding
Structural element marks identical label, omits repeated explanation sometimes.
Embodiment 1.
Fig. 1 is the cross-sectional view of semiconductor device involved in embodiment 1.The semiconductor device 1 has lower electrode 10.?
Semiconductor chip 12 is provided on lower electrode 10.Semiconductor chip 12 is such as IGBT or diode.In semiconductor chip
Spiral conductor 20 is provided on 12.Spiral conductor 20 has downside spiral conductor 22, upside spiral conductor 24.
The plate 30,32 formed by metal is overlapped on spiral conductor 20.Be provided on plate 32 pressure pad 34,
36.The spring electrode of pressing type power semiconductor arrangement is constituted at semiconductor device 1 and having pressure pad 34,36.It is pressing
It is provided with plate 38 on pad 34,36, top electrode 40 is provided on plate 38.
Plate 38 is fixed in the upper end of pressure pad 34,36, and plate 32 is fixed in lower end.Pressure pad 34,36 can stretch in the y-direction, i.e.,
It can be flexible along the direction vertical with the upper surface of the lower surface of lower electrode 10 and top electrode 40.Therefore, 10 He of electrode no matter is descended
How is the distance between top electrode 40, and lower electrode 10 and top electrode 40 are all electrically connected via semiconductor chip 12 by pressure pad 34,36.
Spring 37 is provided between pressure pad 34,36.For the spring 37, if lower electrode 10 and top electrode 40
Distance increases, then applies the power for making the distance of lower electrode 10 and top electrode 40 become smaller, if lower electrode 10 and top electrode 40 away from
From becoming smaller, then apply the power for making the distance of lower electrode 10 and top electrode 40 become larger.
Each element between lower electrode 10 and top electrode 40 is preferably crimped.Thereby, it is possible to via semiconductor chip 12
And pressure pad 34,36 etc. and ensure the electrical connection of top electrode 40 and lower electrode 10.
Fig. 2 is the figure for indicating downside spiral conductor 22 and upside spiral conductor 24.The figure of upper left is downside spiral conductor 22
Top view, the cross-sectional view along the dotted line of the figure is the figure of lower-left.The figure of upper right is the top view of upside spiral conductor 24, and edge should
The cross-sectional view of the dotted line of figure is the figure of bottom right.Downside spiral conductor 22 and upside spiral conductor 24 have identical shape.That is, making
Downside spiral conductor 22 becomes shape identical with upside spiral conductor by inside and outside overturning.
Arrow in Fig. 2 indicates the flow direction of electric current.The spiral conductor 22 in downside, substantially electric current are from downside spiral conductor
It is flowed towards inside in 22 outside.Moreover, being formed with the slot 22a of curve in downside spiral conductor 22.Multiple slot 22a generally ring
Shape.By the flow direction of slot 22a rated current.As a result, for downside spiral conductor 22, electric current is to the inverse time when overlook view
The flowing of needle direction.
On the other hand, in upside spiral conductor 24, substantially electric current is from the inside of upside spiral conductor 24 towards outside
Flowing.Moreover, being formed with the slot 24a of curve in upside spiral conductor 24.Multiple slot 24a are generally cyclic annular.It is provided by slot 24a
The flow direction of electric current.As a result, for upside spiral conductor 24, electric current flows counterclockwise when overlook view.
In this way, being seen by forming slot 22a, 24a in downside spiral conductor 22 and upside spiral conductor 24 so that overlooking
It is consistent with the sense of current flowed in downside spiral conductor 22 in the sense of current of the flowing of upside spiral conductor 24 when examining.
2 figures of lower part according to fig. 2 are it is found that both downside spiral conductor 22 and upside spiral conductor 24 have center
The coniform shape of portion's protrusion.Downside spiral conductor 22 is protruded to downside, and upside spiral conductor 24 is protruded to upside.Under being located at
The opening 22b at the center of side spiral conductor 22 is arranged to make downside spiral conductor 22 and semiconductor chip 2 be easy contact
's.Opening 24b positioned at the center of upside spiral conductor 24 is set to make upside spiral conductor 24 and plate 30 be easy contact
It sets.
Fig. 3 is the cross-sectional view of spiral conductor 20.Upside spiral conductor 24 and downside spiral conductor 22 are oppositely disposed.Pass through
The lower end of upside spiral conductor 24 and the upper end of downside spiral conductor 22 are in contact and constitute spiral conductor 20.As can be seen from FIG. 3,
The width the best part of upside spiral conductor 24 and the width the best part of downside spiral conductor 22 are in contact.Moreover,
In the case where overlook view, electric current is flowed from the central 24A of upside spiral conductor 24 towards outside 24B, and electric current is from downside spiral
The outside 22B of conductor 22 is flowed towards center 22A, and electric current flows through semiconductor chip 12.
Fig. 4 is the partial sectional view of downside spiral conductor 22 and upside spiral conductor 24.As previously mentioned, making in downside spiral
The sense of current that conductor 22 flows is consistent with the sense of current flowed in upside spiral conductor 24, therefore leads in downside spiral
Body 22 and upside spiral conductor 24 generate gravitation.Fig. 5 schematically shows downside spiral conductor 22 and upside spiral conductor 24
The figure of the flow direction of electric current.By generating anticlockwise electric current in downside spiral conductor 22 and upside spiral conductor 24, thus
Gravitation is generated between them.
Fig. 6 is the figure for indicating the assembling example of semiconductor device 1 involved in embodiment 1.It is total to by 3 semiconductor devices 1
Enjoy 1 lower electrode 10.6 semiconductor devices 1 are arranged on base plate 39.It is shown in Fig. 6 to be, 2 have been overlapped by 6
Semiconductor device 1 is equipped on the construction after base plate 39.The pressing type power half for having 12 semiconductor devices 1 is constituted as a result,
Conductor module.From the upward and downward of the module module applied force, each element in semiconductor device is crimped, is achieved in
The electrical connection of semiconductor chip.
In order to need conductive path in each semiconductor device 1 to the uniformly applied pressure of multiple semiconductor chips 12
Clearance and spring construction.Pressure pad 34,36 is for assigning the clearance and guaranteeing electrical connection.In the embodiment 1, in 1 semiconductor
Device is provided with 2 pressure pads 34,36 and is directed to 1 half but it is also possible to be in order to increase the powered-on capacity relative to usual electric current
The setting of conductor device is greater than or equal to 3 pressure pads.Even if in addition, the spring 37 between pressure pad 34,36 is having the case where powered
Under also work as inductance, therefore become high impedance especially for high frequency, electric current do not flow through spring 37.
In addition, the solid arrow of Fig. 1 indicates the direction of short circuit current.The short circuit current of opposite direction is flowed through as upside
The lower electrode 10 of the top electrode 40 of busbar and the busbar as downside.Due to the short circuit current in top electrode 40 and lower electricity
Repulsion is generated between pole 10.Dotted arrow indicates repulsion.Moreover, being filled for semiconductor involved in embodiments of the present invention 1
For setting 1, gravitation is generated between downside spiral conductor 22 and upside spiral conductor 24 Ru above-mentioned, therefore, is made by the gravitation
The repulsion generated between top electrode 40 and lower electrode 10 is offseted or is reduced.
In this way, being applied to the repulsion of top electrode 40 and lower electrode 10, by reducing so as to prevent in 40 He of top electrode
Component between lower electrode 10 generates removing.Such as it can prevent semiconductor chip 12 from removing from lower electrode 10.If can prevent
It only removes, then will not cause the thermal expansion of the environmental gas generated by electric arc, therefore semiconductor device and the module comprising it
It will not explode.Thus, it is possible to omit the explosion precaution being arranged in the past, module can be made small and inexpensive.
Semiconductor is arranged between lower electrode 10 and top electrode 40 in semiconductor device involved in embodiments of the present invention 1
Chip 12, the pressure pad 34,36 being overlappingly arranged with semiconductor chip 12 and with semiconductor chip 12 and pressure pad 34,36 weights
The spiral conductor 20 being arranged foldedly generates gravitation in spiral conductor 20.Semiconductor device involved in embodiments of the present invention 1
1 is able to carry out various modifications in the range for not losing its feature.
For example, it is also possible to change the upper and lower relation of semiconductor chip 12, pressure pad 34,36 and spiral conductor 20.It is thus possible to
It is enough that semiconductor chip 12 is set on pressure pad 34,36.In addition, the quantity for being set to the pressure pad of 1 semiconductor device 1 is not special
It does not limit.As semiconductor chip 12, it is able to use the chip that the longitudinal type of electric current is flowed through between surface and the back side, it is such
Chip is not limited to IGBT or diode.
Semiconductor chip 12 can be formed by silicon, can also be formed by the big wide band gap semiconducter of the band gap compared with silicon.Make
For wide band gap semiconducter, such as there are silicon carbide, gallium nitride type material or diamonds.By using wide band gap semiconducter, from
And the operational temperature of device is got higher.It, can also be with even as the MOSFET of unipolar device also, for silicon carbide
The device of high voltage pressure resistance, can be realized high frequency and efficiently.
Above-mentioned deformation can also apply to semiconductor device involved in the following embodiments and the accompanying drawings.In addition, implementation below
Semiconductor device involved in mode and the similitude of embodiment 1 are more, therefore carry out centered on the difference of embodiment 1
Explanation.
Embodiment 2.
Fig. 7 is the cross-sectional view of the spiral conductor of semiconductor device involved in embodiment 2.The width of upside spiral conductor 24
The smallest part of width for spending the smallest part and downside spiral conductor 22 is in contact.That is, downside spiral conductor 22 center and
The center of upside spiral conductor 24 is in contact.In this case, electric current flows into the outer of upside spiral conductor 24 from the outside of plate 30
Side reaches the center of upside spiral conductor 24, flows from the center of downside spiral conductor 22 towards outside, into semiconductor chip
12。
In plan view, clockwise electric current is generated in upside spiral conductor 24 and downside spiral conductor 22.That is,
In plan view, in the sense of current of the flowing of upside spiral conductor 24 and the side of the electric current flowed in downside spiral conductor 22
To consistent, therefore, gravitation is generated between upside spiral conductor 24 and downside spiral conductor 22.Gravitation reduction, which is applied to, to be powered on
The repulsion of pole 40 and lower electrode 10, therefore can prevent the component between top electrode 40 and lower electrode 10 from generating removing.
Embodiment 3.
Fig. 8 is the downside spiral conductor 41 and upside spiral conductor 42 for indicating semiconductor device involved in embodiment 3
Figure.The figure of upper left is the top view of downside spiral conductor 41, and the cross-sectional view along the dotted line of the figure is the figure of lower-left.The figure of upper right
It is the top view of upside spiral conductor 42, the cross-sectional view along the dotted line of the figure is the figure of bottom right.Downside spiral conductor 41 and upside
Spiral conductor 42 has identical shape.That is, becoming downside spiral conductor 41 and upside spiral conductor by positive and negative overturning
42 identical shapes.The upper end of downside spiral conductor 41 is connected with the lower end of upside spiral conductor 42 and constitutes spiral conductor.
The slot 41a of the downside spiral conductor 41 and slot 42a of upside spiral conductor 42 is linearly to be formed.In the situation
Under, slot only is cut out in disk and disk is made to be deformed into convex, it will be able to simply form downside spiral conductor 41 and upside spiral
Conductor 42.
Current path is limited by slot 40a, thus electric current flows counterclockwise at downside spiral conductor 41.It is logical
Slot 42a is crossed to limit current path, thus electric current flows counterclockwise at upside spiral conductor 42.Thus, in upside
Gravitation is generated between spiral conductor 42 and downside spiral conductor 41.The gravitation reduces the reprimand for being applied to top electrode 40 and lower electrode 10
Power, therefore can prevent the component between top electrode 40 and lower electrode 10 from generating removing.
Embodiment 4.
Fig. 9 is the cross-sectional view of semiconductor device involved in embodiment 4.Between semiconductor chip 12 and lower electrode 10
It is provided with spiral conductor 50.Spiral conductor 50 has: downside spiral conductor 52, is set on lower electrode 10；And upside
Spiral conductor 54 is set on the spiral conductor 52 of downside.The construction of spiral conductor 50 is identical as the construction of spiral conductor 20.
The semiconductor device of embodiment 4 is configured to, and multiple spiral shells are overlappingly arranged between lower electrode 10 and top electrode 40
Revolve conductor.Spiral conductor 20 and spiral conductor 50 can be directly overlapped, and can also be overlapped across semiconductor chip 12 or plate.
By the way that multiple spiral conductors are arranged, therefore application can reduce so as to generate gravitation at multiple positions of semiconductor device
To the repulsion of lower electrode 10 and top electrode 40.
It is provided with 2 spiral conductors 20,50 in embodiments of the present invention 4, can also be arranged in 1 semiconductor device
More than or equal to 3 spiral conductors.The type of multiple spiral conductors is not necessarily all same type.Such as it can also be by Fig. 7
Spiral conductor be overlapped in the spiral conductor 20 of Fig. 1.
In above-mentioned Embodiments 1 to 4, in downside, spiral conductor and upside spiral conductor form slot and electric current have been determined
Flow direction.For the number and shape of slot, as long as in plan view clockwise or counterclockwise by electric current
Direction guidance, then be not particularly limited.In addition, the technical characteristic illustrated in above-mentioned each embodiment can suitably carry out group
It closes.
The explanation of label
10 lower electrodes, 12 semiconductor chips, 20 spiral conductors, 22 downside spiral conductors, 24 upside spiral conductors, 34,36
Pressure pad, 40 top electrodes.
Claims (8)
1. a kind of semiconductor device, which is characterized in that have:
Lower electrode；
Top electrode is set to the top of the lower electrode；
Semiconductor chip is set between the lower electrode and the top electrode；
Pressure pad is overlappingly arranged between the lower electrode and the top electrode with the semiconductor chip；And
Spiral conductor, between the lower electrode and the top electrode overlappingly with the semiconductor chip and the pressure pad
Setting,
The spiral conductor has upside spiral conductor and downside spiral conductor, the downside spiral conductor are led with the upside spiral
The lower end in contact of body, it is opposite with the upside spiral conductor, by the upside spiral conductor and the downside spiral conductor
Slot is formed, so that leading when overlook view in the sense of current of upside spiral conductor flowing and in the downside spiral
The sense of current of body flowing is consistent.
2. semiconductor device according to claim 1, which is characterized in that
Make the width the best part contact of the width the best part and the downside spiral conductor of the upside spiral conductor.
3. semiconductor device according to claim 1 or 2, which is characterized in that
The slot is formed with curve-like.
4. semiconductor device according to claim 1, which is characterized in that
The smallest part contact of the width of the smallest part of width and the downside spiral conductor that make the upside spiral conductor.
5. according to claim 1, semiconductor device described in any one of 2,4, which is characterized in that
The slot is linearly to form.
6. semiconductor device according to any one of claim 1 to 5, which is characterized in that
Multiple spiral conductors are overlappingly provided between the lower electrode and top electrode.
7. semiconductor device according to any one of claim 1 to 6, which is characterized in that
The semiconductor chip is formed by wide band gap semiconducter.
8. semiconductor device according to claim 7, which is characterized in that
The wide band gap semiconducter is silicon carbide, gallium nitride type material or diamond.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2016/076331 WO2018047257A1 (en) | 2016-09-07 | 2016-09-07 | Semiconductor device |
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| Publication Number | Publication Date |
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| CN109690767A true CN109690767A (en) | 2019-04-26 |
| CN109690767B CN109690767B (en) | 2022-08-26 |
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| CN201680088933.8A Active CN109690767B (en) | 2016-09-07 | 2016-09-07 | Semiconductor device with a plurality of semiconductor chips |
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|---|---|
| US (1) | US10770420B2 (en) |
| JP (1) | JP6696576B2 (en) |
| CN (1) | CN109690767B (en) |
| DE (1) | DE112016007203T5 (en) |
| WO (1) | WO2018047257A1 (en) |
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| CN1269519A (en) * | 1999-03-29 | 2000-10-11 | 精工爱普生株式会社 | Liquid crystal displaying apparatus, flat type displaying apparatus and electronic device fitted with said flat-type displaying device |
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| JP2000260287A (en) * | 1999-03-11 | 2000-09-22 | Mitsubishi Electric Corp | Contact opening-closing device |
| EP1263045A1 (en) | 2001-06-01 | 2002-12-04 | ABB Schweiz AG | High power semiconductor module |
| EP1403923A1 (en) | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
| EP2929562B1 (en) | 2012-12-07 | 2021-04-28 | ABB Power Grids Switzerland AG | Semiconductor assembly |
| WO2014103133A1 (en) * | 2012-12-28 | 2014-07-03 | 富士電機株式会社 | Semiconductor device |
| JP6101507B2 (en) | 2013-02-15 | 2017-03-22 | 富士電機株式会社 | Manufacturing method of semiconductor device |
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2016
- 2016-09-07 JP JP2018537921A patent/JP6696576B2/en active Active
- 2016-09-07 DE DE112016007203.1T patent/DE112016007203T5/en active Pending
- 2016-09-07 WO PCT/JP2016/076331 patent/WO2018047257A1/en active Application Filing
- 2016-09-07 US US16/095,387 patent/US10770420B2/en active Active
- 2016-09-07 CN CN201680088933.8A patent/CN109690767B/en active Active
Patent Citations (6)
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| CN1269519A (en) * | 1999-03-29 | 2000-10-11 | 精工爱普生株式会社 | Liquid crystal displaying apparatus, flat type displaying apparatus and electronic device fitted with said flat-type displaying device |
| JP2003338592A (en) * | 2002-05-21 | 2003-11-28 | Mitsubishi Electric Corp | Semiconductor module |
| JP2006287101A (en) * | 2005-04-04 | 2006-10-19 | Toyota Motor Corp | Power module and manufacturing method thereof |
| JP2008193131A (en) * | 2008-05-13 | 2008-08-21 | Toshiba Corp | Multi-chip pressure welding type semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE112016007203T5 (en) | 2019-06-06 |
| JP6696576B2 (en) | 2020-05-20 |
| CN109690767B (en) | 2022-08-26 |
| WO2018047257A1 (en) | 2018-03-15 |
| US20200035640A1 (en) | 2020-01-30 |
| US10770420B2 (en) | 2020-09-08 |
| JPWO2018047257A1 (en) | 2019-02-28 |
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