CN109687855A - A kind of asynchronous triggering high voltage pulse modulator based on IGBT - Google Patents
A kind of asynchronous triggering high voltage pulse modulator based on IGBT Download PDFInfo
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- CN109687855A CN109687855A CN201811441954.0A CN201811441954A CN109687855A CN 109687855 A CN109687855 A CN 109687855A CN 201811441954 A CN201811441954 A CN 201811441954A CN 109687855 A CN109687855 A CN 109687855A
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- 238000007781 pre-processing Methods 0.000 claims 3
- 230000000630 rising effect Effects 0.000 abstract description 5
- 230000001960 triggered effect Effects 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 description 13
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
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- 208000033748 Device issues Diseases 0.000 description 1
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/12—Shaping pulses by steepening leading or trailing edges
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Abstract
本发明公开了一种基于IGBT的非同步触发高压脉冲调制器，属于高压脉冲调制电路领域。该调制器包括脉冲产生装置，光纤传输装置，延时模块，信号处理模块，截尾脉冲产生模块，驱动门电路模块，十六级IGBT脉冲形成装置，以及电源。本发明采用加法叠加结构的脉冲形成装置及栅极截尾脉冲泄放电路，其采用非同步信号触发，既能使输出脉冲过冲大大减小，又能使脉冲上升沿、下降沿变陡，从而实现更窄脉冲宽度的高压脉冲信号输出。
The invention discloses an IGBT-based asynchronous trigger high-voltage pulse modulator, which belongs to the field of high-voltage pulse modulation circuits. The modulator includes a pulse generating device, an optical fiber transmission device, a delay module, a signal processing module, a truncated pulse generating module, a driving gate circuit module, a sixteen-level IGBT pulse forming device, and a power supply. The invention adopts the pulse forming device of the addition and superposition structure and the gate truncated pulse discharge circuit, which is triggered by an asynchronous signal, which can not only greatly reduce the overshoot of the output pulse, but also make the rising and falling edges of the pulse steeper. Thereby, a high-voltage pulse signal output with a narrower pulse width is realized.
Description
Technical field
The invention belongs to high-voltage pulse modulation circuits, and in particular to one kind is based on IGBT (Insulated Gate
Bipolar Transistor) nonsynchronous signal triggering, the effective high-voltage pulse modulation power source of the vacuum short, small in size that is delayed.
Background technique
High power pulsed modulator is that the transmitting of radio tube cathode electronics generates indispensable part, and performance is direct
Determine the transmitting of vacuum tube cathode electronics.High power pulsed modulator is widely used, and is not only applicable to vacuum electron device, radar
Transmitter field, and have very important status in fields such as civilian medical treatment, high-pressure dust-cleanings.
For a long time, high power pulsed modulator mostly uses greatly the scheme of " linear modulator ", i.e., using high voltage and constant current electricity
The components such as source, hydrogen thyratron, pulse forming network and pulse transformer.But the program there are many shortcomings place: modulator
It is triggered using synchronization signal, in addition the presence of transmission line leakage inductance, the pulse front edge overshoot of multi-stage superimposed formation is serious, greatly reduces
Device service life；Since the presence of device parasitic capacitor causes the pulse up and down time to slow down, efficiency is lower.To understand
The certainly above problem has carried out some research both at home and abroad.To overcome pulse front edge overshoot phenomenon, on unipolar pulse output circuit
Impulse output amplitude is limited using pressure limiting circuit, this method can effectively reduce overshoot voltage, but due to many overshoot pulse voltages
Amplitude is more than that output pulse amplitude 50% is even higher, therefore proposes requirements at the higher level to the component pressure resistance of pressure limiting circuit, works as pressure limiting
In circuit after component breakdown, can still very big damage be generated to switching device；For due to parasitic capacitance generate rising edge of a pulse,
The too slow problem of failing edge, usually can in such a way that source electrode is released, but the resistance to pressure request released for bleeder pipe due to source electrode with
Switching tube is identical, needs the high pressure resistant device of high current using same rule, and price is not cost-effective.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of, and the asynchronous triggering high-tension pulse based on IGBT reconstitutes
Device processed uses nonsynchronous signal to touch using the pulse shaping device and grid truncation pulse leadage circuit of addition overlaying structure
Hair can make output pulse overshoot greatly reduce and make rising edge of a pulse, failing edge steepening, to realize that more burst pulse is wide
The high-voltage pulse signal of degree exports.
The technical solution adopted by the present invention are as follows: a kind of asynchronous triggering high voltage pulse modulator based on IGBT, including arteries and veins
Rush generation device, fiber transmission device, time delay module, signal processing module, truncation pulse generation module, driving gate circuit mould
Block, 16 grades of IGBT pulse shaping devices and power supply.
The pulse generating device exports low voltage pulse signal all the way.
Low voltage pulse signal is amplified and is divided into five road preprocessed signals by the fiber transmission device.
The first signal processing module is inputted after the inverted processing of first via preprocessed signal, then exports four tunnels and pretreatment
The high level of signal first group of positive negative pulse stuffing high-frequency signal of same size.
Second, third, the 4th road preprocessed signal respectively through the first, second, third time delay module delay after, input respectively
Second, third, fourth signal processing module, then export respectively the high level of four tunnels and preprocessed signal it is of same size
Two, third, the 4th group of positive negative pulse stuffing high-frequency signal；The first time delay module delay time is n nanosecond, the second delay mould
Block delay time is 2n nanosecond, and the third time delay module delay time is 3n nanosecond (n is positive integer).
5th road preprocessed signal inputs truncation pulse generation module, in the same of the first to the 4th road preprocessed signal shutdown
When export high level narrow pulse signal；The high level narrow pulse signal inputs driving gate circuit module, by driving gate circuit mould
16 tunnel truncation pulse leadage circuits in block release IGBT switch tube grid excess charge.
Described first~four group totally ten six road positive negative pulse stuffing high-frequency signals input driving gate circuit module be converted to 16
Road driving signal, and the driving signal is inputted 16 grades of IGBT pulse shaping devices.
Described every grade of connection power supply of 16 grades of IGBT pulse shapings device, the driving signal exported by driving gate circuit module
Switch IGBT is in control required pulse.
Further, the signal processing module includes that low frequency turns high-frequency circuit, photoelectric coupled circuit, half-bridge circuit, driving arteries and veins
Rush amorphous isolating transformer a, b, c, d.Wherein, low frequency turns high-frequency circuit for low-frequency pulse signal to be processed into high frequency letter
Number；Photoelectric coupled circuit is used for isolation signals；Half-bridge circuit is used to positive pulse become positive negative pulse stuffing；Transformation is isolated in driving pulse amorphous
Device is for being isolated high pressure and low-voltage circuit.
The truncation pulse generation module includes truncation pulse shaping circuit, truncation pulse amorphous isolating transformer.Wherein
The truncation pulse shaping circuit is used to form truncation pulse；Truncation pulse amorphous isolating transformer is for being isolated truncation pulse form
At circuit and the truncation pulse leadage circuit for being in high potential.
The driving gate circuit module includes 16 tunnel truncation pulse leadage circuits, ten No. six driving circuits.Wherein drive
Circuit is converted into driving signal for handling positive negative pulse stuffing high-frequency signal；Truncation pulse leadage circuit switchs tube grid for releasing
Excess charge.
The fiber transmission device is used for transmission, pre-processes the low voltage pulse signal generated.
The Postponement module, for postponing the opening time of input pulse signal.
16 grades of IGBT pulse shaping device, is used to form high-voltage great-current pulse.
High voltage pulse modulator of the invention has the following characteristics that
1, this high voltage modulator driving switch pipe by the way of asynchronous driving signal, makes list caused by parasitic inductance
The big voltage of pole leading-edge overshoot superposition greatly reduces, and will not increase excessive peripheral circuit.
2, this modulator truncation pulse be added in switch tube grid at, circuit pivot device be it is silicon-controlled, not only can be effective
Quick release swap switch tube grid charge, rapidly switch off switching tube, reduce between being delayed after pulse, and it is medium-sized to save one
The high pressure resistant switching tube cost of electric current.
3, pulse shaping device uses addition overlaying structure, increases integrated circuit fault-tolerant ability, when a switching tube is bad
When falling, circuit can still be worked normally.And loading radio tube is directly to connect into circuit, is not the electricity consumption on resistance
Cable extraction voltage, can be used for high-current circuit.
4, driving pulse is transformed into high-frequency impulse by circuit compatibility broad pulse and burst pulse, can effectively reduce isolation
Volume of transformer improves transmittability.
5, isolating transformer material uses non-crystalline material, with high magnetic permeability, high magnetic saturation, low-loss, high resistance
Rate, compared to the no-load losses that silicon steel material can cut down 75%.
Detailed description of the invention
Fig. 1 is the structural block diagram of high voltage pulse modulator of the invention.
Fig. 2 is the pulse sequence figure of high voltage pulse modulator of the invention.
Fig. 3 is the signal processing module of high voltage pulse modulator of the invention.
Fig. 4 is the time delay module of high voltage pulse modulator of the invention.
Fig. 5 is the truncation pulse generation module of high voltage pulse modulator of the invention.
Fig. 6 is the driving gate circuit module of high voltage pulse modulator of the invention.
Fig. 7 is 16 grades of IGBT pulse shaping devices of high voltage pulse modulator of the invention.
Specific embodiment
Such as Fig. 1, high voltage pulse modulator of the invention includes:
Pulse generating device, for generating a low voltage pulse signal A1；
Fiber transmission device is used for transmission, handles low voltage pulse signal A1, obtains preprocessed signal A2；
Postponement module, for postponing the opening time of input pulse signal；
Signal processing module gives driving gate circuit for preprocessed signal A2 to be converted into positive negative pulse stuffing high frequency signal transmission
Module, including low frequency turn high-frequency circuit, photoelectric coupled circuit, half-bridge circuit, driving pulse amorphous isolating transformer a, b, c, d, wherein
Low frequency turns high-frequency circuit, for low-frequency pulse signal to be processed into high-frequency signal；Photoelectric coupled circuit is used for isolation signals；Half
Bridge circuit, for positive pulse to be become positive negative pulse stuffing；Driving pulse amorphous isolating transformer a, b, c, d, for be isolated high pressure with
Low-voltage circuit；
Truncation pulse generation module is used to form for generating and transmitting truncation pulse, including truncation pulse shaping circuit
Truncation pulse；Truncation pulse amorphous isolating transformer, the truncation arteries and veins for truncation pulse shaping circuit being isolated with being in high potential
Rush leadage circuit；
Driving gate circuit module, for handling positive negative pulse stuffing high-frequency signal and truncation pulse signal, including driving circuit,
For handling positive negative pulse stuffing high-frequency signal；Truncation pulse leadage circuit switchs tube grid excess charge for releasing.
16 grades of IGBT pulse shaping devices, are used to form required high-voltage great-current pulse.
As shown in Figure 1, pulse generating device issues one section of low voltage pulse signal A1, this pulse signal is by fiber transmission device
Receive and exports preprocessed signal A2.A1 and A2 are in-phase signal, as shown in A1, A2 signal phase in Fig. 2, only A2 voltage amplitude
Value is higher, facilitates subsequent conditioning circuit application.
A2 signal is divided into five tunnels, as shown in Figure 1, first via signal, exports A3 signal after reverse phase, A3 signal and A2 believe
Number reverse phase, as shown in Figure 2；A2 signal is output to low frequency and turns high-frequency circuit TL494 circuit, and such as Fig. 3 is put using two errors of shielding
The connection type of big device, two error amplifiers anode 16 foot, 1 foot ground connection.Two error amplifier cathode, 2 foot, 15 foot passes through electricity respectively
Resistance R8, R7 connect 14 feet and connect VREF high level.4 feet are dead zone function, divide control duty ratio close to 50% by R6, R9.5 feet
C4,6 foot R10, RP1 determine frequency of oscillation, and formula is that (R is 6 foot grounding resistances to f=1.1/ (R*C), and C is 5 foot ground capacities
Value).C5, C6 are electric source filter circuit.13 feet determine working method, this is recommends application, so connecing 14 foot high level.3 feet connect
A3 signal.When A3 is low level, the complementary concussion pulse B of 9 feet, the output of 10 feet, when A3 is high level, the output of 9,10 feet is low
Level.
The complementary concussion pulse B of 9 foot, 10 foot output is respectively connected to photoelectric coupled circuit IC1 to be isolated with 2 feet of IC2, is prevented
Subsequent conditioning circuit has an impact signal processing module.The pulse signal that optocoupler goes out is separately connected R13, R15 and enters half-bridge circuit.
Switch transistor T 2, the half-bridge circuit that T3 is IGBT pipe, advantage are that can pass through high current.D2, D3, D4, D5 are pressure stabilizing two
Pole pipe, R13, R14, R15, R16 are current-limiting resistor voltage divider, and gate protection circuit of 8 devices as switching tube prevents grid from believing
Number input is excessive.R21, C13, R22, C14 are that buffer circuit prevents reverse current from burning out switch when main circuit current is reversed
Pipe.R17, R18, R19, R20 are current-limiting resistance, since delivery outlet connects the primary of driving pulse amorphous isolating transformer a, thus it is electric
Stream can be very big, and current-limiting resistance is added to can protect switching tube.C15, C17 are big storage capacitor.C16, C18 are filtering small capacitances.R23
As voltage subtraction resistance, delivery outlet CZ10 is connected to both ends.By half-bridge circuit, the middle positive pressure that pulse signal becomes ± 300V is negative
Pulsed high-frequency signal.
The second road signal that A2 signal separates, as shown in Figure 1, connection time delay module, such as Fig. 4.Use CD4098 monostable
Trigger constitutes time delay module, and 5 foot, 3 foot connects high level, closes failing edge triggering, and 4 feet connect A2 signal, opens rising edge triggering,
1,2 feet connect capacitance resistance setting delay time, and when A2 rising edge, 7 output low levels are delayed n nanosecond (t2-t1) after the time,
High level is exported, with A2 signal commonly through CD4011 NAND gate, when two signals are high level, the signal of NAND gate output
C is low level, is otherwise high level.Such as Fig. 2, shown in signal C.Signal C turns high-frequency circuit output signal D, passes through again by low frequency
Cross photoelectric coupled circuit, half-bridge circuit arrives at the primary of amorphous isolating transformer b.
As shown in Figure 1, the third road that separates A2, the 4th road signal also pass through delay mould identical with the second line structure
Block distinguishes output signal E, signal G, and difference is that delay time is incremented by, then passes through low frequency and turn high-frequency circuit output signal F, H,
Using photoelectric coupled circuit, half-bridge circuit, signal is as shown in Figure 2.Finally reach the primary of amorphous isolating transformer c and d.
The 5th road signal of A2 connects truncation pulse generation module as the trigger pulse of truncation pulse, as shown in figure 5,
A2 is still input to a CD4098 chip, and difference is, 11 feet of access, failing edge triggering.I.e. driving signal terminates, and occurs
The pulse falling edge moment exports as 10 foot high level outputs, and high level width connects capacitance resistance control truncation arteries and veins by 15 foot, 14 foot
Width is rushed, signal is exported as shown in Fig. 2 I signal, and small signal passes through IC3 optocoupler, then is transferred to voltage amplification composed by IGBT
Circuit, R28, R29, D6, D7 are that T4 tube grid protects circuit, and R30, R31 are current-limiting resistance, prevent electric current excessive, and delivery outlet connects
Truncation pulse amorphous isolating transformer is connect, wherein one end is grounded.
Drive pulse signal passes through driving pulse amorphous isolating transformer a, b, c, d, each isolating transformer time cascade
Connect 4 coils, i.e. each isolating transformer, the secondary output identical positive negative pulse stuffing high-frequency signal of four amplitude phases.
Four isolating transformers have 16 signals altogether, and four are one group, have not only been able to achieve asynchronous control and have reduced overshoot voltage, but also will not mistake
It is increase driving circuit volume more, it is demonstrated experimentally that four can inhibit overshoot voltage for one group very well.The driving electricity of 16 groups of signals
Road is identical, as shown in fig. 6, positive and negative middle pressure high-frequency signal by full bridge rectifier D8 and filter circuit C24, C25, become with
The identical large driven current density signal of initial low pressure pulse signal pulsewidth, by the diode D9 of one-way conduction, and by partial pressure electricity
Road R32, R33 connect IGBT switching tube with D10, D11 gate protection circuit formed.Since electric current is larger, therefore IGBT pipe is opened
Quickly.
It is secondary to connect 16 identical driving gate circuit moulds altogether by the truncation pulse of truncation pulse amorphous isolating transformer
The truncation impulse circuit of block, as shown in fig. 6, being the circuit that a silicon-controlled D12 is main component, silicon-controlled anode and IGBT are managed
Grid is connected, and R34, R35 are that control terminal divides voltage protection circuit, and when driving signal shutdown failing edge goes out current moment, truncation pulse is defeated
Out, controlled silicon conducting, IGBT tube grid charge are quickly released, IGBT shutdown.
16 IGBT pipes connect into the IGBT pulse shaping device of addition overlaying structure, as shown in fig. 7, every grade of circuit power
E volt DC voltage, load radio tube is connected into circuit, when driving signal is come, 16 times of radio tube two-stage generation-
E volts of negative high voltage.Wherein M, N point and Q1 pipe in M, P point and Q1 corresponding diagram 6.Capacitor is storage capacitor, diode action
It is, when this grade of switching tube damage disconnects, electric current passes through from diode, and circuit is still up, and keeps integrated circuit fault-tolerant
Ability increases.
Claims (4)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113824433A (en) * | 2021-08-26 | 2021-12-21 | 电子科技大学 | Pulse modulator based on Schottky diode cascade connection |
| CN113945894A (en) * | 2021-09-30 | 2022-01-18 | 中国船舶重工集团公司第七二四研究所 | Vacuum transmitter monitoring and management method |
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| CN113824433A (en) * | 2021-08-26 | 2021-12-21 | 电子科技大学 | Pulse modulator based on Schottky diode cascade connection |
| CN113824433B (en) * | 2021-08-26 | 2023-08-25 | 电子科技大学 | A Pulse Modulator Based on Cascaded Schottky Diodes |
| CN113945894A (en) * | 2021-09-30 | 2022-01-18 | 中国船舶重工集团公司第七二四研究所 | Vacuum transmitter monitoring and management method |
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| Publication number | Publication date |
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| CN109687855B (en) | 2021-06-01 |
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