CN109660224A - Filter composite piezoelectric substrate and preparation method thereof - Google Patents
Filter composite piezoelectric substrate and preparation method thereof Download PDFInfo
- Publication number
- CN109660224A CN109660224A CN201811548827.0A CN201811548827A CN109660224A CN 109660224 A CN109660224 A CN 109660224A CN 201811548827 A CN201811548827 A CN 201811548827A CN 109660224 A CN109660224 A CN 109660224A
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- CN
- China
- Prior art keywords
- piezoelectric substrate
- layer
- film
- beryllium
- composite piezoelectric
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- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 239000002131 composite material Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title description 5
- 230000007704 transition Effects 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 20
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 17
- 239000011777 magnesium Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052916 barium silicate Inorganic materials 0.000 description 1
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14564—Shifted fingers transducers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention proposes a kind of filter composite piezoelectric substrate, including piezoelectric substrate layer, transition zone, the conductive layer set gradually, the transition zone is beryllium film, the conductive layer is aluminium film, it is that the beryllium of hexagonal crystal system or magnesium are grown on piezoelectric substrate surface as transition film that the present invention, which uses equally, be well combined between the beryllium or magnesium and piezoelectric substrate of lattice structure of the same race, solve the problems, such as between aluminium film and piezoelectric substrate due to lattice structure it is different caused by combine it is bad；Also, beryllium or magnesium film and aluminium film are metal film, and the two is combined by metallic bond, and bonding state is good.
Description
Technical field
The present invention relates to filter substrate preparation technical field more particularly to a kind of filter composite piezoelectric substrate and
Preparation method.
Background technique
In SAW device, aluminium film is the most suitable material for producing surface acoustic wave due to there is relatively low acoustic resistance.
But aluminium film is during the growth process, and due to mismatching with matrix piezoelectric material lattice, the aluminium film lattice of growth is strictly distorted, and aluminium film is answered
Power is larger, in surface acoustic wave application, due under high frequency, the effect of high-power acoustic-electric, it is easy to generate because of aluminium film and matrix material
The phenomenon that material separates and leads to electrode delamination.
And in the application of the cellular radio of SAW filter, it is desirable that device can be born greatly to the transmitting of 1W or receiving
Power.However under high current effect, due to the migration effect of aluminium atom, it is easy to open circuit at electrode or short circuit, high power are given
Substrate surface bring high temperature keeps device very vulnerable.
Summary of the invention
It is necessary to propose a kind of filter composite piezoelectric substrate.
It there is a need to propose a kind of preparation method of composite piezoelectric substrate.
A kind of filter composite piezoelectric substrate, it is described including piezoelectric base unit layer, transition zone, the conductive layer set gradually
Transition zone is beryllium film, and the conductive layer is aluminium film.
A method of preparing the composite piezoelectric substrate, comprising the following steps:
Piezoelectric base unit is placed in mixed acid solution and impregnates by step 1, so that substrate surface is in hydrophobic state, is conducive to metal
Atom is in attachment above；
Step 2 deposits one layer of transition layer film on the surface of piezoelectric base unit layer using magnetron sputtering；
Step 3 deposits one layer of conductive layer on the surface of transition zone using magnetron sputtering.
The present invention select the metal to match with the 200 substrate lattice structure of interdigital transducer of SAW filter as
Membrane material is sputtered, to promote the service life and temperature stability of interdigital transducer.
Detailed description of the invention
Fig. 1 is that the interdigital transducer is set to the structural schematic diagram on composite piezoelectric substrate.
Fig. 2 is the sectional view of part composite piezoelectric substrate.
In figure: composite piezoelectric substrate 100, piezoelectric base unit layer 10, transition zone 20, conductive layer 30, interdigital transducer 200.
Specific embodiment
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Referring to Fig. 1, Fig. 2, the embodiment of the invention provides a kind of filter composite piezoelectric substrates 100, including successively set
Piezoelectric base unit layer 10, transition zone 20, the conductive layer 30 set, the transition zone 20 are beryllium film, and the conductive layer 30 is aluminium film.
Further, the transition zone 20 is magnesium film.
For the present invention using metallic beryllium or magnesium as transition membrane material, beryllium and magnesium are hexagonal system structure, crystal structure
It is as shown in the table with lattice parameter:
Since aluminium is cubic system, the piezoelectric substrate materials such as lithium niobate, lithium tantalate are hexagonal crystal systems, and aluminium film is in lithium niobate, tantalic acid
When directly growing on lithium, since the two lattice structure mismatches, and since aluminium film is metal film, piezoelectric base unit layer 10 is nonmetallic
Material layer causes the aluminium film lattice of growth strictly to distort, and aluminium film stress is larger.
So it is that the beryllium of hexagonal crystal system or magnesium are grown on piezoelectric substrate surface as transition film that the present invention, which uses equally,
It is well combined, is solved between aluminium film and piezoelectric substrate due to lattice knot between the beryllium or magnesium and piezoelectric substrate of lattice structure of the same race
Bad problem is combined caused by structure is different；Also, beryllium or magnesium film and aluminium film are metal film, and the two is bonded by metal
It closes, bonding state is good, not easily to fall off.
As it can be seen that this programme all solves two problems existing when combining between above-mentioned aluminium film and piezoelectric base unit layer 10.
Further, it is controlled when the thickness of the transition zone 20 can be according to design or sputtering.
Further, the transition zone 20 is multilayered structure, and the multilayered structure of the transition zone 20 is successively spaced
Beryllium film, magnesium film.For example, transition zone 20 can be the beryllium film set gradually, magnesium film double-layer structure, it can be the beryllium set gradually
Film, magnesium film, beryllium film three-decker can be the beryllium film set gradually, the four-layer structure of magnesium film, beryllium film, magnesium film.
Further, the material of the piezoelectric base unit layer 10 is one of lithium niobate, lithium tantalate, quartz, barium silicate.
The present invention also proposes a kind of to prepare the method such as above-mentioned composite piezoelectric substrate, comprising the following steps:
Piezoelectric base unit layer 10 is placed in mixed acid solution and impregnates by step 1, so that substrate surface is in hydrophobic state, is conducive to gold
Belong to atom in attachment above；
Step 2 deposits one layer of 20 film of transition zone on the surface of piezoelectric base unit layer 10 using magnetron sputtering；
Step 3 deposits one layer of conductive layer 30 on the surface of transition zone 20 using magnetron sputtering.
Further, in step 1, the mixed acid solution is the mixed solution or hydrofluoric acid and nitre of hydrofluoric acid and sulfuric acid
The mixed solution of acid.
Further, in step 1, piezoelectric base unit layer 10 is placed in mixed acid solution and is impregnated, while to mixed acid solution
In blast nitrogen, to enhance to the cleaning ability on 10 surface of piezoelectric base unit layer.
It extracts composite piezoelectric substrate of the invention and carries out power durability test and life tests test, obtain following number
According to:
Substrate in the table is by taking lithium tantalate wafer as an example, as can be seen from the above data, label a substrate is in background technique
The double-layer structure of only the lithium tantanate substrate layer and aluminium conductive layer；Marking b, c substrate is provided with beryllium or magnesium transition zone
Three-decker, it is seen then that the service life of the three-decker is multiplied, and durability is significantly improved；Mark d, e, f substrate difference
Two layers, three layers, the structure of four-level membrane are set by transition zone, it is seen then that the service life of the substrate of the multilayer transition layer is set at double
Increase, durability is significantly improved.
Module or unit in the device of that embodiment of the invention can be combined, divided and deleted according to actual needs.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and wants according to right of the present invention
Made equivalent variations is sought, is still belonged to the scope covered by the invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811548827.0A CN109660224B (en) | 2018-12-18 | 2018-12-18 | Composite piezoelectric substrate for filter and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811548827.0A CN109660224B (en) | 2018-12-18 | 2018-12-18 | Composite piezoelectric substrate for filter and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109660224A true CN109660224A (en) | 2019-04-19 |
| CN109660224B CN109660224B (en) | 2023-03-24 |
Family
ID=66114571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811548827.0A Active CN109660224B (en) | 2018-12-18 | 2018-12-18 | Composite piezoelectric substrate for filter and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109660224B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3955160A (en) * | 1975-04-30 | 1976-05-04 | Rca Corporation | Surface acoustic wave device |
| JPH09199976A (en) * | 1996-01-18 | 1997-07-31 | Hitachi Ltd | Surface acoustic wave device electrode |
| CN1430330A (en) * | 2001-12-27 | 2003-07-16 | 株式会社村田制作所 | Surface acoustic wave element and its manufacturing method |
| CN1543065A (en) * | 2003-04-28 | 2004-11-03 | 富士通媒体部品株式会社 | Duplexers Using Surface Acoustic Wave Filters |
| CN1578131A (en) * | 2003-07-17 | 2005-02-09 | Tdk株式会社 | Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
| CN1659718A (en) * | 2002-06-10 | 2005-08-24 | 日本碍子株式会社 | Piezoelectric/electrostrictive device and method for manufacturing the same |
| CN1852026A (en) * | 2005-04-21 | 2006-10-25 | 富士通媒体部品株式会社 | Filter and duplexer |
| CN102377402A (en) * | 2010-08-16 | 2012-03-14 | 精工爱普生株式会社 | Piezoelectric vibration device, method of manufacturing the same, and method of adjusting resonant frequency |
| CN102763492A (en) * | 2009-12-02 | 2012-10-31 | 埃普科斯股份有限公司 | Metallization having high power compatibility and high electrical conductivity |
| CN103022013A (en) * | 2011-09-23 | 2013-04-03 | 英飞凌科技股份有限公司 | Power semiconductor module with wireless SAW temperature sensor |
| WO2018132742A1 (en) * | 2017-01-12 | 2018-07-19 | Akoustis, Inc. | Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices |
-
2018
- 2018-12-18 CN CN201811548827.0A patent/CN109660224B/en active Active
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|---|---|---|---|---|
| US3955160A (en) * | 1975-04-30 | 1976-05-04 | Rca Corporation | Surface acoustic wave device |
| JPH09199976A (en) * | 1996-01-18 | 1997-07-31 | Hitachi Ltd | Surface acoustic wave device electrode |
| CN1430330A (en) * | 2001-12-27 | 2003-07-16 | 株式会社村田制作所 | Surface acoustic wave element and its manufacturing method |
| CN1659718A (en) * | 2002-06-10 | 2005-08-24 | 日本碍子株式会社 | Piezoelectric/electrostrictive device and method for manufacturing the same |
| CN1543065A (en) * | 2003-04-28 | 2004-11-03 | 富士通媒体部品株式会社 | Duplexers Using Surface Acoustic Wave Filters |
| CN1578131A (en) * | 2003-07-17 | 2005-02-09 | Tdk株式会社 | Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
| CN1852026A (en) * | 2005-04-21 | 2006-10-25 | 富士通媒体部品株式会社 | Filter and duplexer |
| CN102763492A (en) * | 2009-12-02 | 2012-10-31 | 埃普科斯股份有限公司 | Metallization having high power compatibility and high electrical conductivity |
| CN102377402A (en) * | 2010-08-16 | 2012-03-14 | 精工爱普生株式会社 | Piezoelectric vibration device, method of manufacturing the same, and method of adjusting resonant frequency |
| CN103022013A (en) * | 2011-09-23 | 2013-04-03 | 英飞凌科技股份有限公司 | Power semiconductor module with wireless SAW temperature sensor |
| WO2018132742A1 (en) * | 2017-01-12 | 2018-07-19 | Akoustis, Inc. | Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices |
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| 袁娣等: "Be、Mg掺杂AlN电子结构的第一性原理计算", 《原子与分子物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109660224B (en) | 2023-03-24 |
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