CN109613518B - Light beam imaging device - Google Patents
Light beam imaging device Download PDFInfo
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- CN109613518B CN109613518B CN201811587884.XA CN201811587884A CN109613518B CN 109613518 B CN109613518 B CN 109613518B CN 201811587884 A CN201811587884 A CN 201811587884A CN 109613518 B CN109613518 B CN 109613518B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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Abstract
The invention discloses a light beam imaging device, comprising: a substrate layer; the first type conducting layer is arranged above the substrate layer and is in contact with the substrate layer; the first electrode layer is arranged above the first type conducting layer and is in contact with the first type conducting layer; at least one graphic layer disposed over the first type conductive layer, in contact with the first type conductive layer; a second type conducting layer and a second electrode layer are sequentially and correspondingly laminated above the graphic layer; the pattern layer is used for combining the current carriers of the first type conducting layer and the second type conducting layer to generate light waves and transmit the light waves. According to the light beam imaging device provided by the embodiment of the invention, when different electrode layers are connected with a power supply, multiple functions of light wave generation, light wave transmission, light wave modulation and the like can be realized, and the technical problem that the conventional light beam imaging device can only be used for transmitting light waves input by external equipment and is single in function is solved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light beam imaging device.
Background
The light beam imaging device is a core part of the laser radar, and has excellent application advantages in the aspects of automobile unmanned driving and security environment monitoring. The traditional light beam imaging device generally adopts a prism, which is not beneficial to integration. The existing light beam imaging device adopts a semiconductor integrated circuit to replace a prism device, and has the advantages of small volume, low price and convenient integration.
However, in the process of transmitting light beams, the existing light beam imaging device has high transmission loss of light waves due to the limitation of materials and other factors, and the existing light beam imaging device can only be used for transmitting light waves input by external equipment and has a single function.
Disclosure of Invention
In view of this, embodiments of the present invention provide a light beam imaging apparatus to solve the technical problems in the prior art that the transmission loss of light waves is high due to the limitation of factors such as materials, and the conventional light beam imaging apparatus can only be used for transmitting light waves input by an external device and has a single function.
The technical scheme provided by the invention is as follows:
an embodiment of the present invention provides a light beam imaging apparatus, including: a substrate layer; a first type conductive layer disposed over and in contact with the substrate layer; a first electrode layer disposed over the first type conductive layer, in contact with the first type conductive layer; at least one graphic layer disposed over the first type conductive layer in contact with the first type conductive layer; a second type conducting layer and a second electrode layer are sequentially and correspondingly laminated above the graphic layer; the pattern layer is used for compounding the current carrier of the first type conducting layer and the current carrier of the second type conducting layer, generating light waves and transmitting the light waves.
Further, the forbidden bandwidth of the graphic layer is smaller than that of the first type conducting layer, and the forbidden bandwidth of the graphic layer is smaller than that of the second type conducting layer.
Further, the forbidden bandwidth of the first type conducting layer and/or the second type conducting layer is not less than 2.3 eV.
Further, the refractive index of the pattern layer is larger than that of the first type conductive layer, and the refractive index of the pattern layer is larger than that of the second type conductive layer.
Further, the pattern layer has a refractive index higher than 2.3.
Further, the first type conducting layer is an n-type layer, and the second type conducting layer is a p-type layer; or the first type conducting layer is a p-type layer, and the second type conducting layer is an n-type layer.
Further, the number of the graphics layers is two, including: the device comprises a first graphic layer and a second graphic layer, wherein the distance between the first graphic layer and the second graphic layer is 0-5000 nm.
Furthermore, the distance between the first electrode layer and the first graphic layer is 5-50000 nm.
Further, the graphic layer comprises a plurality of graphic units, the distance between every two graphic units is 0-10 mu m, and the graphic units are in any shape of a cuboid, a cylinder, a cone or a ring.
Furthermore, the thickness of the first type conducting layer is 0.1-10 mu m, and the thickness of the second type conducting layer is 0.1-10 mu m.
The technical scheme provided by the invention has the following advantages:
in the light beam imaging device provided by the embodiment of the invention, the conductive layers are respectively arranged on two sides of the graphic layer, when the first electrode layer and the second electrode layer are connected with the power supply, current carriers in the conductive layers can directionally move into the graphic layer to be compounded to generate light waves, and meanwhile, the two conductive layers can limit the transmission of the generated light waves in the graphic layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view showing a configuration of a beam imaging apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram showing a beam imaging apparatus according to another embodiment of the present invention;
fig. 3 shows a schematic configuration diagram of a beam imaging apparatus according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a light beam imaging apparatus, as shown in fig. 1, the apparatus including: a substrate layer 10; a first type conductive layer 20 disposed above the substrate layer 10, in contact with the substrate layer 10; a first electrode layer 51 disposed over the first-type conductive layer 20, in contact with the first-type conductive layer 20; at least one pattern layer 30 disposed over the first-type conductive layer 20, in contact with the first-type conductive layer 20; a second-type conducting layer 40 and a second electrode layer 52 are correspondingly laminated above the pattern layer 30 in sequence; the pattern layer 30 serves to combine carriers of the first-type conductive layer 20 and carriers of the second-type conductive layer 40, generate a light wave, and transmit the light wave. Specifically, two electrodes may be provided in each of the first electrode layer 51 and the second electrode layer 52.
In the light beam imaging device provided by the embodiment of the invention, the conductive layers are respectively arranged on two sides of the graphic layer, when the first electrode layer and the second electrode layer are connected with the power supply, current carriers in the conductive layers can directionally move into the graphic layer to be compounded to generate light waves, and meanwhile, the two conductive layers can limit the transmission of the generated light waves in the graphic layer.
Specifically, the material of the substrate layer 10 may be Si, GaN, SiO2And Al2O3The thickness of the substrate layer 10 can be 0.1-10 mm, and the substrate layer 10 can be used for bearing and is convenient for integrate. The material of the pattern layer 30 may be ZnS, AlP, GaP, SiC, GaN, AlN, TiO2ZnO, ITO, etc., the thickness of the pattern layer 30 may be 5 to 5000 nm. The material of the first-type conductive layer 20 and the second-type conductive layer 40 may be ZnS, AlP, GaP, SiC, GaN, AlN, TiO2ZnO, ITO, etc., the thickness of the first type conductive layer 20 and the second type conductive layer 40 is 0.1 to 10 mu m, and the resistivity of the first electrode layer 51 and the second electrode layer 52 can be not more than 5 × 10－7Omega · m metal, alloy or metal/oxide composite material with low resistivity, preferably, the material of the first electrode layer 51 and the second electrode layer 52 can be Ag, Cu, Au, Al, Pt, Ni, Cr, Ti and ITO material, and the thickness of the first electrode layer 51 and the second electrode layer 52 can be 10-1000 nm. The above materials and thicknesses are merely illustrative of the various layers of the beam imaging apparatus and the application is not limited thereto.
According to the light beam imaging device provided by the embodiment of the invention, the substrate layer, the conductive layer and the pattern layer are made of the materials with low prices, so that the production cost can be reduced, the pattern layer is made of the material transparent to light waves, the absorption to light waves is small, the transmission loss of light can be reduced, the conductive performance and the heat conductivity of the electrode layer can be improved and the contact potential barrier can be reduced due to the electrode layer made of the material with low resistivity, the conduction of current and the heat dissipation of a device are facilitated, and the stability and the uniformity of the light beam imaging device can be improved due to the light beam imaging device with.
As an optional implementation manner of this embodiment, a forbidden bandwidth of the graphics layer 30 is smaller than a forbidden bandwidth of the first-type conductive layer 20, and a forbidden bandwidth of the graphics layer 30 is smaller than a forbidden bandwidth of the second-type conductive layer 40. Specifically, the energy gap of the first-type conductive layer 20 and/or the second-type conductive layer 40 may be not less than 2.3eV, which is not limited in this application. The first type conduction layer 20 may be an n-type layer, and the second type conduction layer 40 may be a p-type layer; or the first type conductive layer 20 may be a p-type layer, and the second type conductive layer 40 may be an n-type layer, where the n-type layer and the p-type layer may be formed by doping impurities, or by other methods, which is not limited in this application.
In the light beam imaging device provided by the embodiment of the invention, the forbidden bandwidth of the graphic layer is smaller than the forbidden bandwidth of the conductive layers on two sides, so that the conductive layers on two opposite sides of the graphic layer are undoped or lightly doped, a large potential barrier is formed on the contact surfaces of the graphic layer and the conductive layers on two sides, electrons and holes in the conductive layers on two sides cannot cross the potential barrier to enter the conductive layer on the other side, so that the electrons and holes in the conductive layers on two sides are limited to be compounded in the graphic layer to generate light waves, the light beam imaging device generates light waves with high efficiency, the loss is reduced, in addition, the forbidden bandwidth of the graphic layer is smaller than the forbidden bandwidth of the conductive layers on two sides, the bandgap width of the graphic layer is smaller than the bandgap width of the conductive layers on two sides, the energy of photons in the light waves generated by the recombination of the electrons and the holes is also smaller than the forbidden bandwidths of the conductive layers, the absorption loss is reduced.
As an alternative implementation manner of this embodiment, the refractive index of the pattern layer 30 is greater than the refractive index of the first type conductive layer 20, and the refractive index of the pattern layer 30 is greater than the refractive index of the second type conductive layer 40. Specifically, the refractive index of the pattern layer 30 may be higher than 2.3, or may be other values, which is not limited in the present application.
According to the light beam imaging device provided by the embodiment of the invention, the refractive index of the graph layer is greater than that of the conducting layers on the two sides, so that the transmitted light waves are totally reflected at the contact interface of the graph layer and the conducting layers on the two sides, the transmission of the light waves in the graph layer is limited, and the transmission loss of the light is reduced.
As an alternative embodiment of this embodiment, as shown in the right side view of the optical beam imaging apparatus in fig. 2, at least one side surface of the second type conductive layer 40 has an extension, and the extension is in contact with the first type conductive layer 10. Specifically, second type conductive layer 40 may wrap patterned layer 30 to prevent patterned layer 30 from contacting the outside, since patterned layer 30 is susceptible to chemical corrosion or mechanical scratching if it is in contact with the outside for a long time, and the extension of second type conductive layer 40 may isolate patterned layer 30 from the outside to prevent patterned layer 30 from being damaged.
As an optional implementation manner of this embodiment, as shown in fig. 3, the number of the graphics layers 30 is two, and the two graphics layers include: the first graphic layer 31 and the second graphic layer 32 are arranged, the distance between the first graphic layer 31 and the second graphic layer 32 is 0-5000 nm, and the distance between the first electrode layer 51 and the first graphic layer 31 is 5-50000 nm.
As an optional implementation manner of this embodiment, the graphics layer includes a plurality of graphics units, a pitch of each graphics unit is 5 to 5000nm, a shape of the graphics unit is any one of a cuboid, a cylinder, a cone, or a ring, and the graphics unit may be in other shapes, which is not limited in this application. Specifically, when the graphic element is a rectangular parallelepiped, the width of the rectangular parallelepiped may be 5 to 5000nm, the thickness of the rectangular parallelepiped may be 5 to 5000nm, and in addition, the thickness of the first type conductive layer may be 0.1 to 10 μm, and the thickness of the second type conductive layer may be 0.1 to 10 μm, which are only examples, and the application is not limited thereto.
In a preferred embodiment of the beam imaging apparatus, as shown in FIG. 3, the substrate layer 10 may be made of Al2O3The thickness of the substrate layer may be 0.5 mm.
The first type conductive layer 20 may be an n-type layer, the material of the n-type layer may be selected from an n-type ZnO material, the room temperature forbidden band width of the ZnO material is 3.4eV, the refractive index is 2.0, the main function of the n-type layer is to provide negative free carriers and confine light to be transmitted in the pattern layer, and the thickness of the n-type layer may be 1 μm.
GaP-based material may be selected for pattern layer 30. The GaP material has a GaP width of 2.3eV at room temperature and a refractive index of 3.5, the pattern layer 30 may include a first pattern layer 31 and a second pattern layer 32, and a distance between the first pattern layer 31 and the second pattern layer 32 may be 100 nm. The graphic layer may include a plurality of graphic units, each of the graphic units may be a rectangular parallelepiped, the rectangular parallelepiped may have a thickness of 100nm and a width of 1 μm, and a pitch of each of the graphic units in the graphic layer may be 5 μm. The main function of the graphics layer is to generate and transmit light waves.
The second-type conductive layer 40 may be a p-type layer, the p-type layer may be made of p-type ZnO material, the room-temperature forbidden band width of the ZnO material is 3.4eV, the refractive index of the ZnO material is 2.0, and the thickness of the p-type layer may be 2 μm. The p-type layer may include a first p-type layer 41 and a second p-type layer 42, the first p-type layer 41 may be stacked and disposed over the first pattern layer 31, the second p-type layer 42 may be stacked and disposed over the second pattern layer 32, and a pitch between the first p-type layer 41 and the second p-type layer 42 may be 100 nm. The main function of this p-type layer is to provide positive free carriers and to confine light to transport in the patterned layer. When the first type conductive layer 20 is made of n-type ZnO material, the second type conductive layer is made of p-type ZnO material, and the pattern layer is made of GaP material, the light wave transmitted in the pattern layer can be totally reflected at the interface between the GaP material and the ZnO material, so that the light is transmitted in the GaP material, and the effect of reducing the transmission loss of the light can be achieved. In addition, the second type conducting layer can wrap the graphic layer, so that the graphic layer is prevented from contacting with the outside, and the graphic layer is prevented from being chemically corroded or mechanically scratched.
The second type conductive layer 40 may include a second electrode layer 52 and a third electrode layer 53 thereon, the second electrode layer 52 is disposed on the second p-type layer 42, the third electrode layer 53 is disposed on the first p-type layer 41, the first electrode layer 51, the second electrode layer 52, and the third electrode layer 53 may be made of Al/Au material, the thickness of Al may be 20nm, the thickness of Au may be 200nm, and the resistivity of the Al material may be 2.7 × 10－8Omega m, the resistivity of the Au material is 2.4 × 10－8Omega.m. The distance between the first electrode layer 51 and the first pattern layer 31 may be 100 nm. Specifically, the first electrode layer 51, the first pattern layer 31 and the second pattern layer 32 are arranged above the first type conducting layer 20 in parallel, when all three electrode layers are connected with a power supply, a voltage is generated between the first type conducting layer and the second type conducting layer, and carriers in the first type conducting layer and the second type conducting layer directionally move into the pattern layers and are recombined to generate light waves. When only one electrode layer is connected with a power supply, light waves transmitted in the graph layer can be modulated.
The light beam imaging device provided by the embodiment of the invention has the advantages that the substrate layer, the first type conducting layer and the second type conducting layer are made of materials with low price, the production cost is reduced, the forbidden band width of the graphic layer is smaller than that of the first type conducting layer, the forbidden band width of the graphic layer is smaller than that of the second type conducting layer, the refractive index of the pattern layer is larger than that of the first type conducting layer and the second type conducting layer, so that the transmission loss of the light wave in the pattern layer is reduced, the electrode layer is made of a material with low resistivity, the current conduction and the heat dissipation of the device are facilitated, the light beam imaging device has multiple functions of generating light waves, transmitting light waves, modulating light waves and the like, and solves the technical problem that the conventional light beam imaging device can only be used for transmitting light waves input by external equipment and has a single function.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (10)
1. A beam imaging apparatus, comprising:
a substrate layer;
a first type conductive layer disposed over and in contact with the substrate layer;
a first electrode layer disposed over the first type conductive layer, in contact with the first type conductive layer;
at least one graphic layer disposed over the first type conductive layer in contact with the first type conductive layer; a second type conducting layer and a second electrode layer are sequentially and correspondingly laminated above the graphic layer; the pattern layer is used for compounding the current carrier of the first type conducting layer and the current carrier of the second type conducting layer, generating light waves and transmitting the light waves;
when the first electrode layer and the second electrode layer are connected with a power supply, carriers in the first type conducting layer and the second type conducting layer move into the graph layer to be combined to generate light waves, and the first type conducting layer and the second type conducting layer limit the generated light waves to be transmitted in the graph layer;
when the first electrode layer or the second electrode layer is connected with a power supply, the first electrode layer or the second electrode layer is used for modulating light waves transmitted in the graphic layer;
when the first electrode layer and the second electrode layer are not connected with a power supply, the pattern layer is used for transmitting light waves.
2. A beam imaging apparatus according to claim 1, wherein a forbidden bandwidth of the pattern layer is smaller than that of the first type conductive layer, and a forbidden bandwidth of the pattern layer is smaller than that of the second type conductive layer.
3. A beam imaging apparatus according to claim 2, wherein the first-type conductive layer and/or the second-type conductive layer has a forbidden bandwidth of not less than 2.3 eV.
4. A beam imaging apparatus according to any one of claims 1-3, wherein the patterned layer has a refractive index greater than the refractive index of the first type of conductive layer and the patterned layer has a refractive index greater than the refractive index of the second type of conductive layer.
5. A beam imaging apparatus according to claim 4, wherein the patterned layer has a refractive index higher than 2.3.
6. A beam imaging device according to claim 1, wherein said first type conductive layer is an n-type layer, and said second type conductive layer is a p-type layer; or the first type conducting layer is a p-type layer, and the second type conducting layer is an n-type layer.
7. A beam imaging apparatus according to claim 1, wherein the number of said pattern layers is two, including: the device comprises a first graphic layer and a second graphic layer, wherein the distance between the first graphic layer and the second graphic layer is 0-5000 nm.
8. A beam imaging apparatus according to claim 7, wherein a distance between said first electrode layer and said first pattern layer is 5 to 50000 nm.
9. A beam imaging apparatus according to claim 1, wherein the pattern layer includes a plurality of pattern elements, a pitch of each of the pattern elements is 0 to 10 μm, and the pattern elements have a shape of any one of a rectangular parallelepiped, a cylinder, a cone, or a ring.
10. A beam imaging apparatus according to claim 1, wherein the first type conductive layer has a thickness of 0.1 to 10 μm, and the second type conductive layer has a thickness of 0.1 to 10 μm.
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| TW322591B (en) * | 1996-02-09 | 1997-12-11 | Handotai Energy Kenkyusho Kk | |
| TWI382783B (en) * | 2006-03-07 | 2013-01-11 | Lg Chemical Ltd | Organic light emitting diode and method of manufacturing same |
| TWI437738B (en) * | 2010-10-06 | 2014-05-11 | Huga Optotech Inc | Semiconductor light-emitting element |
| TW201325307A (en) * | 2011-12-07 | 2013-06-16 | Au Optronics Corp | Illumination device |
| CN103164056A (en) * | 2011-12-08 | 2013-06-19 | 群康科技(深圳)有限公司 | Touch control panel, formation method thereof and display system |
| CN102723416A (en) * | 2012-07-05 | 2012-10-10 | 杭州士兰明芯科技有限公司 | LED epitaxial wafer and manufacturing method thereof |
| CN103022891A (en) * | 2012-12-04 | 2013-04-03 | 北京工业大学 | High-power semiconductor laser chip integrated with protection diode |
| CN103050600B (en) * | 2012-12-21 | 2015-12-09 | 华灿光电股份有限公司 | A kind of preparation method of chip of light-emitting diode |
| CN103454866B (en) * | 2013-09-24 | 2015-12-02 | 中国科学院光电技术研究所 | Photoetching imaging equipment and photoetching imaging method based on surface plasma wave illumination |
| CN104298414A (en) * | 2014-11-14 | 2015-01-21 | 张家港康得新光电材料有限公司 | Capacitive touch screen |
| CN105720004B (en) * | 2014-12-04 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN107346743B (en) * | 2016-05-06 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and its manufacturing method |
| KR20170127296A (en) * | 2016-05-11 | 2017-11-21 | 삼성전자주식회사 | An input device and an electronic appartus having the same |
| CN107578990A (en) * | 2017-09-06 | 2018-01-12 | 德淮半导体有限公司 | The forming method of imaging sensor |
| CN207529933U (en) * | 2017-11-23 | 2018-06-22 | 中科天芯科技（北京）有限公司 | Light beam imaging device |
| CN108807437B (en) * | 2018-05-24 | 2020-12-18 | 德淮半导体有限公司 | Image sensor and method of forming the same |
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