CN109521829A - A kind of voltage reference source circuit high-order temperature compensated with full temperature section - Google Patents
A kind of voltage reference source circuit high-order temperature compensated with full temperature section Download PDFInfo
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention provides a kind of voltage reference source circuit high-order temperature compensated with full temperature section, it is characterized in that, including PTAT generation circuit module, non-linear Negative temperature coefficient current generation circuit module, ratio superposition output circuit module, biasing circuit module, high temperature section temperature-compensation circuit module and low-temperature zone temperature-compensation circuit module, reference voltage source provided by the invention compensates benchmark using the temperature-compensating mode of various ways, substantially increases the temperature characterisitic of benchmark.
Description
Technical field
The present invention relates to field of power supplies, in particular to a kind of voltage reference high-order temperature compensated with full temperature section
Source circuit.
Background technique
Consumer electronics market is persistently expanded in recent years, and ic power field is also rapidly expanding, along with product
Performance requirement is higher and higher, and the performance requirement of power supply class IC is also increasingly harsher.The precision of nucleus module reference voltage source and steady
The qualitative precision for directly determining whole system, in order to preferably adapt to the development of simulation and Digital Analog Hybrid Circuits, reference voltage
The invention performance in source needs further raising, provides stable varying with temperature for entire circuit and fluctuates small benchmark
Source, but in prior art, general benchmark has only carried out first compensation phase and has been difficult to reach lower temperature coefficient.
Summary of the invention
In order to solve the above-mentioned technical problem, the present invention proposes following technical scheme:
A kind of voltage reference source circuit high-order temperature compensated with full temperature section, including it is PTAT generation circuit module, non-thread
Property Negative temperature coefficient current generation circuit module, ratio superposition output circuit module, biasing circuit module, high temperature section temperature-compensating electricity
Road module and low-temperature zone temperature-compensation circuit module.
Further scheme,
PTAT generation circuit module includes the 1st resistance R1,1P type metal-oxide-semiconductor M1,2P type metal-oxide-semiconductor M2,1NPN type three
Pole pipe, 2NPN type triode, 3NPN type triode, 4NPN type triode, 6NPN type triode, three pole of 7NPN type
Pipe；
The wherein collector of 1NPN type triode, the emitter of 3NPN type triode and the base of 2NPN type triode
Pole connection, base stage and the collector of 2NPN type triode, the emitter of 4NPN type triode of 1NPN type triode connect
It connects, the emitter ground connection of 1NPN type triode, the emitter other end of one end connection 2NPN type triode of the 1st resistance R1
The collector pole of ground connection, the base stage of 3NPN type triode and 3NPN type triode, the base stage of 4NPN type triode, the
The emitter of 6NPN type triode connects, the collector of 4NPN type triode and the emitter of 7NPN type triode, the
Collector and the base stage of 6NPN type triode, the drain electrode of 1P type metal-oxide-semiconductor M1, the 7NPN type triode of 6NPN type triode
Base stage connection, the grid of 1P type metal-oxide-semiconductor M1 connects bias voltage VB1, the collector and 2P type MOS of 7NPN type triode
The drain electrode of pipe M2, the grid of 2P type metal-oxide-semiconductor M2 connect.
Further scheme,
Non-linear Negative temperature coefficient current generation circuit module includes 5NPN type triode, the 2nd resistance R2；
The base stage of 5NPN type triode is connect with the base stage of 4NPN type triode, the collector of 5NPN type triode
It is connect with the collector of 4NPN type triode, the emitter other end of one end connection 5NPN type triode of the 2nd resistance R2
Ground connection.
Further scheme,
Ratio is superimposed output circuit module by 3P type metal-oxide-semiconductor M3,8NPN type triode Q8, the 3rd resistance R3, the 4th electricity
R4, the 5th resistance R5 is hindered to constitute；
The grid of 3P type metal-oxide-semiconductor M3 connects the grid connection of 2P type metal-oxide-semiconductor M2, and the source level of 3P type metal-oxide-semiconductor M3 connects electricity
Source, the emitter ground connection of 8NPN type triode Q8, the base stage of 8NPN type triode Q8 and the collection of 8NPN type triode Q8
One end connection of electrode, the 5th resistance R5, the other end of the 5th resistance R5 are connect with one end of the 4th resistance R4, and the one of the 4th resistance R4
One end of the 3rd resistance R3 is held to connect, the other end of the 3rd resistance R3 is connect with the drain terminal of 3P type metal-oxide-semiconductor M3.
Further scheme,
Biasing circuit module is by 4P type metal-oxide-semiconductor M4,5P type metal-oxide-semiconductor M5,6P type metal-oxide-semiconductor M6,16P type metal-oxide-semiconductor
M16,9NPN type triode Q9,10NPN type triode Q10,11NPN type triode Q11, the 6th resistance R6, the 7th resistance
R7, the 8th resistance R8, the 9th resistance R9, the 10th resistance R10 and operational amplifier AMP are constituted；
The base stage of 9NPN type triode Q9 is connect with the base stage of 3NPN type triode Q3,9NPN type triode Q9's
Emitter is connect with the collector of 10NPN type triode Q10, the base stage of 10NPN type triode Q10 and three pole of 2NPN type
The base stage of pipe Q2 connects, and the emitter of 10NPN type triode Q10 is connect with one end of the 6th resistance R6, and the 6th resistance R6's is another
The emitter of one end and 11NPN type triode Q11 are grounded, the drain electrode of 4P type metal-oxide-semiconductor M4 and the grid of 4P type metal-oxide-semiconductor M4
The collector connection of pole, the grid of 6P type metal-oxide-semiconductor M6,9NPN type triode Q9, the source electrode and 5P of 4P type metal-oxide-semiconductor M4
The source electrode of type metal-oxide-semiconductor M5, the source electrode of 6P type metal-oxide-semiconductor M6 connect and are connected to power supply, and the drain electrode of 5P type metal-oxide-semiconductor M5 is put with operation
One end connection of the positive input terminal, the 7th resistance R7 of big device AMP, another termination 11NPN type triode Q11's of the 7th resistance R7
The base stage connection of collector, 11NPN type triode Q11, the drain electrode of 6P type metal-oxide-semiconductor M6 and the source of 16P type metal-oxide-semiconductor M16
Pole connection, the grid of 16P type metal-oxide-semiconductor M16 connect the output end of operational amplifier AMP, the drain electrode and fortune of 16P type metal-oxide-semiconductor M16
Calculate one end connection of the negative input end of amplifier AMP, the 8th resistance R8, the both ends of the 9th resistance R9 respectively with the 8th resistance R8, the 10th
Resistance R10 connection.
Further scheme,
High temperature section temperature-compensation circuit module include 7P type metal-oxide-semiconductor M7,8P type metal-oxide-semiconductor M8,9P type metal-oxide-semiconductor M9 with
And 13N type metal-oxide-semiconductor M13,14N type metal-oxide-semiconductor M13, low-temperature zone temperature-compensation circuit module include 10P type metal-oxide-semiconductor M10,
11P type metal-oxide-semiconductor M11,12P type metal-oxide-semiconductor M12；
The grid of 7P type metal-oxide-semiconductor M7 is connect with the grid of the grid of 6P type metal-oxide-semiconductor M6,10P type metal-oxide-semiconductor M10, the
The source level of 7P type metal-oxide-semiconductor M7 connects power supply, the drain electrode of 7P type metal-oxide-semiconductor M7 and source level, the 9P type metal-oxide-semiconductor of 8P type metal-oxide-semiconductor M8
The source electrode of M9 connects, drain electrode and the drain electrode of 12P type metal-oxide-semiconductor M12, the grid of 15N type metal-oxide-semiconductor M15 of 8P type metal-oxide-semiconductor M8
The drain electrode connection of pole, 15N type metal-oxide-semiconductor M15, the drain electrode of 9P type metal-oxide-semiconductor M9 and drain electrode, the 13N of 13N type metal-oxide-semiconductor M13
The grid connection of the grid, 14N type metal-oxide-semiconductor M14 of type metal-oxide-semiconductor M13, the source electrode and 14N type MOS of 13N type metal-oxide-semiconductor M13
The source electrode of pipe M14, the source electrode of 15N type metal-oxide-semiconductor M15 are connected to ground terminal, the drain electrode of 10P type metal-oxide-semiconductor M10 and 12P type MOS
The drain electrode connection of the source electrode, 11P type metal-oxide-semiconductor M11 of pipe M12.
Beneficial effect by adopting the above technical scheme is:
Reference voltage source provided by the invention compensates benchmark using the temperature-compensating mode of various ways, effectively
The temperature coefficient for reducing output voltage, improves the stability of reference voltage, provides accurately reference voltage for high-precision circuit
Source.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is full temperature section high-order compensation reference voltage source of the invention；
Fig. 2 is the reference voltage VREF1 temperature characteristics after first compensation phase；
Fig. 3 is the reference voltage VREF2 temperature characteristics after middle-temperature section high-order compensation；
Fig. 4 is the superposition compensated reference voltage VREF temperature characteristics of height temperature section；
Specific embodiment
As shown in Figure 1, full temperature range high-order compensation a reference source according to the present invention include traditional single order temperature-compensating,
Middle-temperature section is high-order temperature compensated, high temperature section temperature-compensating, several compensation ways of low-temperature zone temperature-compensating, substantially by 1 circuit of attached drawing
It is divided into single order temperature-compensation circuit, middle-temperature section temperature-compensation circuit, bias-voltage generating circuit, high/low temperature temperature-compensation circuit 4
A part carries out analysis description to by this 4 parts below respectively.
Wherein single order temperature-compensation circuit includes NPN type triode Q1, Q2, Q3, Q4, Q6, Q7, Q8, p-type metal-oxide-semiconductor M1,
M2, M3, resistance R1, R3, R4, R5.The grid of p-type metal-oxide-semiconductor M1 meets a bias voltage VB1, takes the area of NPN type triode Q2
The area of n times of NPN type triode Q4, the area of NPN type triode Q1 are equal to the area of triode Q3.
NPN type triode Q1, Q2, Q3, Q4 and resistance R1 generate IPTAT electric current I3, IPTAT electric current are as follows:P-type metal-oxide-semiconductor M3 and PMOS tube M2 is connected into 1:m times of current mirror form, M3 branch
Image current be m × I3.The collector voltage for taking NPN type triode Q8 is VBE8, R=R3+R4+R5, single order temperature-compensating
Gained voltage are as follows:Temperature characteristics such as attached drawing 2 after first compensation phase, is presented recessed
Trend, VBE are a complicated functions relevant to temperature, and the temperature coefficient of VBE is not linear, by multinomial characterization
Curve form.
Complete expression VBE=VG0+VTln (EG)-VT (γ-α) lnT of transistor base emitter voltage VBE, in formula
VG0 is the band gap voltage of silicon, and E, G are temperature independent parameters, and α is the coefficient that collector current varies with temperature, and γ is
The coefficient that mobility varies with temperature, can obtain from formula, and VBE is contained in VTln to the high order amount of nonlinearity of temperature.Single order
Temperature-compensating only offsets the single order item in expression formula, therefore, can not compensation band gap by traditional linear compensation
High-order term in reference voltage, the temperature stability that further increase reference voltage need to introduce amount of nonlinearity and carry out to benchmark
Nonlinear compensation.
Middle-temperature section high-order compensation part in the present invention is increased on first compensation phase circuit by triode Q5 and electricity
The branch where R2 is hindered, this branch is made to generate a nonlinear negative temperature parameter current I4.I4=INL=(VBE3+
VBE4-VBE5)/R2, INL indicates with temperature change to be in non-linear current in above formula.I4 is the production of nonlinear temperature coefficient current
Raw condition are as follows: the edge that reasonable operating point makes triode Q5 work in saturation region is set.The NPN known to the characteristic of triode
The amplification coefficient of pipe is not constant, its value depends on the operating condition of transistor.When triode NPN works in saturation region
When, its amplification coefficient varies with temperature presentation nonlinear change.Generated electric current I4 i.e. INL is superimposed upon IPTAT electricity
The branch road where being added to VREF on I3 by PMOS tube M2 and M3 mirror image is flowed, single order reference output voltage VFEF1 is carried out
High-order compensation.Introduce the reference output voltage VREF2 of non-linear current INL compensation are as follows: VREF2=VBE8+IPTAT×R+INL
×R.Reference output voltage VREF2 varies with temperature characteristic such as attached drawing 3, and the temperature characteristics of VREF2 is in similar sinusoidal trend.
Bias circuit portion in this circuit is used to generate the bias voltage unrelated with temperature.As shown in Figure 1, p-type metal-oxide-semiconductor
M5, M4, M6 are mirror image pipe, and the branch where p-type metal-oxide-semiconductor M4 generates an IPTAT electric current, folded by the mirror image of p-type metal-oxide-semiconductor M5
It is added on NPN type triode Q11 and resistance R7 and generates the temperature independent voltage of a single order as operational amplifier AMP's
Positive input voltage.The negative input voltage follow positive input voltage of operation operational amplifier AMP generates one one
The temperature independent voltage value of rank, by the partial pressure of resistance R8, R9, R10 generate the temperature independent bias voltage Va of single order and
Vb.Here biasing circuit provides bias voltage for height temperature section temperature-compensation circuit.
To benchmark carry out high temperature section temperature-compensating and low-temperature zone temperature compensation division point including p-type metal-oxide-semiconductor M7, M10, M8, M9,
M11, M12 and N-type metal-oxide-semiconductor M13, M14, M15.Wherein p-type metal-oxide-semiconductor M8 meets bias voltage Vb, M11 and connects bias voltage Va, p-type
Metal-oxide-semiconductor M9 and M12 meet the common bias voltage VB2 with negative temperature coefficient.N-type metal-oxide-semiconductor M13, M14 are that current mirror is used to mirror image
The electric current that p-type metal-oxide-semiconductor M9 is generated.Using this feature, reasonable bias voltage is set, makes p-type metal-oxide-semiconductor M9, M11 work in Asia
Threshold zone, the function of this partial circuit are to generate low-temperature zone temperature-compensated current I1 and high temperature section temperature-compensated current I2.
The mechanism with fiducial temperature characteristic high-order compensation is realized using the sub-threshold region of metal-oxide-semiconductor are as follows: work is in sub-threshold region
Metal-oxide-semiconductor sub-threshold region current expressionIt can obtain and be offset to subthreshold
Value area MOS drain current ID has exponent relation with the changing rule of VGS.In the present invention, branch where PMOS tube M7, M10
Electric current and temperature at positive linear relationships, metal-oxide-semiconductor M9, M12 connect with temperature at the bias voltage VB2, Va, Vb of negative linear relationship be with
The incoherent voltage of temperature.Vb < VB2 < Va makes p-type metal-oxide-semiconductor M12 work in saturation region, p-type metal-oxide-semiconductor M11 work in subthreshold value
The critical point in area and cut-off region is further decreased in high temperature section with the raising VB2 of temperature, the gate source voltage of p-type metal-oxide-semiconductor M11
VGS linearly increases, flow through p-type metal-oxide-semiconductor M11 electric current show as with temperature reduce exponentially type become larger.P-type metal-oxide-semiconductor M8 work
In saturation region, p-type metal-oxide-semiconductor M9 works in sub-threshold region and cut-off region critical point, becomes smaller in low-temperature zone with the raising VB2 of temperature, P
The gate source voltage VGS of type metal-oxide-semiconductor M9 linearly reduces, then the electric current for flowing through PMOS tube M9 shows as increasing exponentially type change with temperature
Greatly.
By analyzing above, in conjunction with attached drawing 3, electric current I1, which is realized, carries out temperature-compensating, electric current I2 to low-temperature zone reference voltage
It realizes and temperature-compensating is carried out to high temperature section reference voltage.Low-temperature zone compensates electric current I1 and is connected to benchmark output branch by port IIN1
Between resistance R3, R4, high temperature section compensates electric current I2 and is connected between benchmark output branch resistance R4, R5 by port IIN2.Two-way
Electric current I1 and I2 are superimposed upon on benchmark output circuit, output voltage VREF=VREF+I1 × (R4+R5)+I2 × R5.Through excessive
The final reference voltage temperature characteristics such as attached drawing 4 that kind compensation way obtains.It can obtain, the temperature of final reference output voltage VREF
Degree characteristic curve is all compensated very well in each temperature section.
Although hereinbefore having been made with reference to some embodiments, present invention is described, of the invention not departing from
In the case where range, it can be carried out various improvement and can with equivalent without replacement technical point therein, especially, as long as
There is no technical contradiction, the various features in the various embodiments of institute's careless mistake of the present invention can be combined by either type and be made
It is only in omitting length and economize on resources with, the description for not carrying out exhaustive row to the case where these combinations in the present invention
Consider.Therefore, the invention is not limited to specific embodiments disclosed herein, and including falling into claim.
Claims (6)
1. a kind of voltage reference source circuit high-order temperature compensated with full temperature section, which is characterized in that including PTAT generation circuit
Module, non-linear Negative temperature coefficient current generation circuit module, ratio are superimposed output circuit module, biasing circuit module, high temperature section
Temperature-compensation circuit module and low-temperature zone temperature-compensation circuit module.
2. a kind of voltage reference source circuit high-order temperature compensated with full temperature section according to claim 1, feature exist
In the PTAT generation circuit module includes the 1st resistance R1,1P type metal-oxide-semiconductor M1,2P type metal-oxide-semiconductor M2, three pole of 1NPN type
Pipe, 2NPN type triode, 3NPN type triode, 4NPN type triode, 6NPN type triode, three pole of 7NPN type
Pipe；
Wherein collector, the emitter of 3NPN type triode and the base of 2NPN type triode of the 1NPN type triode
Pole connection, the transmitting of the collector, 4NPN type triode of the base stage and 2NPN type triode of the 1NPN type triode
Pole connection, the emitter ground connection of the 1NPN type triode, one end connection 2NPN type triode of the 1st resistance R1
Emitter other end ground connection, the base stage of the 3NPN type triode and collector pole, the 4NPN type of 3NPN type triode
The emitter connection of the base stage, 6NPN type triode of triode, the collector and 7NPN type of the 4NPN type triode
The emitter of triode, the collector of the 6NPN type triode and base stage, the 1P type metal-oxide-semiconductor M1 of 6NPN type triode
Drain electrode, 7NPN type triode base stage connection, the grid of the 1P type metal-oxide-semiconductor M1 meets bias voltage VB1, described the
The collector of 7NPN type triode is connect with the grid of the drain electrode of 2P type metal-oxide-semiconductor M2,2P type metal-oxide-semiconductor M2.
3. a kind of voltage reference source circuit high-order temperature compensated with full temperature section according to claim 2, feature exist
In non-linear Negative temperature coefficient current generation circuit module includes 5NPN type triode, the 2nd resistance R2；
The base stage of the 5NPN type triode is connect with the base stage of 4NPN type triode, the collection of the 5NPN type triode
Electrode is connect with the collector of 4NPN type triode, the transmitting of one end connection 5NPN type triode of the 2nd resistance R2
Pole other end ground connection.
4. a kind of voltage reference source circuit high-order temperature compensated with full temperature section according to claim 2, feature exist
In, ratio be superimposed output circuit module by 3P type metal-oxide-semiconductor M3,8NPN type triode Q8, the 3rd resistance R3, the 4th resistance R4,
5th resistance R5 is constituted；
The grid of the 3P type metal-oxide-semiconductor M3 connects the grid connection of 2P type metal-oxide-semiconductor M2, the source level of the 3P type metal-oxide-semiconductor M3
Connect power supply, the emitter ground connection of the 8NPN type triode Q8, the base stage and 8NPN type of the 8NPN type triode Q8
One end connection of the collector of triode Q8, the 5th resistance R5, the other end of the 5th resistance R5 and one end of the 4th resistance R4 connect
It connects, one end connection of the 3rd resistance R3 of one end of the 4th resistance R4, the other end and 3P type metal-oxide-semiconductor of the 3rd resistance R3
The drain terminal of M3 connects.
5. a kind of voltage reference source circuit high-order temperature compensated with full temperature section according to claim 4, feature exist
In biasing circuit module is by 4P type metal-oxide-semiconductor M4,5P type metal-oxide-semiconductor M5,6P type metal-oxide-semiconductor M6,16P type metal-oxide-semiconductor M16,
9NPN type triode Q9,10NPN type triode Q10,11NPN type triode Q11, the 6th resistance R6, the 7th resistance R7, the 8th
Resistance R8, the 9th resistance R9, the 10th resistance R10 and operational amplifier AMP are constituted；
The base stage of the 9NPN type triode Q9 is connect with the base stage of 3NPN type triode Q3, the 9NPN type triode
The emitter of Q9 is connect with the collector of 10NPN type triode Q10, the base stage of the 10NPN type triode Q10 and the
The base stage of 2NPN type triode Q2 connects, and the emitter of 10NPN type triode Q10 is connect with one end of the 6th resistance R6, described
The emitter of the other end of 6th resistance R6 and 11NPN type triode Q11 are grounded, the drain electrode of the 4P type metal-oxide-semiconductor M4 and the
The collector connection of the grid of 4P type metal-oxide-semiconductor M4, the grid of 6P type metal-oxide-semiconductor M6,9NPN type triode Q9, the 4P type
The source electrode of metal-oxide-semiconductor M4 connect and is connected to power supply, the 5P with the source electrode of the source electrode of 5P type metal-oxide-semiconductor M5,6P type metal-oxide-semiconductor M6
The drain electrode of type metal-oxide-semiconductor M5 is connect with one end of the positive input terminal of operational amplifier AMP, the 7th resistance R7, the 7th resistance R7's
The base stage connection of the collector, 11NPN type triode Q11 of another termination 11NPN type triode Q11, the 6P type MOS
The drain electrode of pipe M6 is connect with the source electrode of 16P type metal-oxide-semiconductor M16, and the grid of 16P type metal-oxide-semiconductor M16 connects operational amplifier AMP's
The drain electrode of output end, 16P type metal-oxide-semiconductor M16 is connect with one end of the negative input end of operational amplifier AMP, the 8th resistance R8, and the 9th
The both ends of resistance R9 are connect with the 8th resistance R8, the 10th resistance R10 respectively.
6. a kind of voltage reference source circuit high-order temperature compensated with full temperature section according to claim 5, feature exist
In, high temperature section temperature-compensation circuit module include 7P type metal-oxide-semiconductor M7,8P type metal-oxide-semiconductor M8,9P type metal-oxide-semiconductor M9 and the
13N type metal-oxide-semiconductor M13,14N type metal-oxide-semiconductor M13, low-temperature zone temperature-compensation circuit module include 10P type metal-oxide-semiconductor M10,11P
Type metal-oxide-semiconductor M11,12P type metal-oxide-semiconductor M12；
The grid of the 7P type metal-oxide-semiconductor M7 is connect with the grid of the grid of 6P type metal-oxide-semiconductor M6,10P type metal-oxide-semiconductor M10, institute
The source level for stating 7P type metal-oxide-semiconductor M7 meets power supply, the drain electrode of the 7P type metal-oxide-semiconductor M7 and source level, the 9P of 8P type metal-oxide-semiconductor M8
The source electrode of type metal-oxide-semiconductor M9 connects, the drain electrode of the 8P type metal-oxide-semiconductor M8 and drain electrode, the 15N type MOS of 12P type metal-oxide-semiconductor M12
The drain electrode connection of the grid, 15N type metal-oxide-semiconductor M15 of pipe M15, the drain electrode of the 9P type metal-oxide-semiconductor M9 and 13N type metal-oxide-semiconductor
The drain electrode of M13, the grid connection of the grid of 13N type metal-oxide-semiconductor M13,14N type metal-oxide-semiconductor M14, the 13N type metal-oxide-semiconductor M13
Source electrode and the source electrode of the source electrode of 14N type metal-oxide-semiconductor M14,15N type metal-oxide-semiconductor M15 be connected to ground terminal, the 10P type MOS
The drain electrode of pipe M10 is connect with the drain electrode of the source electrode, 11P type metal-oxide-semiconductor M11 of 12P type metal-oxide-semiconductor M12.
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| CN110187166A (en) * | 2019-06-26 | 2019-08-30 | 成都芯进电子有限公司 | A kind of current sensor temperature-compensation circuit to float for low temperature |
| CN111427410A (en) * | 2020-04-22 | 2020-07-17 | 中国科学院微电子研究所 | Band gap reference circuit |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| CN115586809A (en) * | 2022-10-26 | 2023-01-10 | 南京博芯电子技术有限公司 | Exponential type temperature compensation band gap reference voltage source and compensation method thereof |
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| CN110187166A (en) * | 2019-06-26 | 2019-08-30 | 成都芯进电子有限公司 | A kind of current sensor temperature-compensation circuit to float for low temperature |
| CN111427410A (en) * | 2020-04-22 | 2020-07-17 | 中国科学院微电子研究所 | Band gap reference circuit |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| CN115586809A (en) * | 2022-10-26 | 2023-01-10 | 南京博芯电子技术有限公司 | Exponential type temperature compensation band gap reference voltage source and compensation method thereof |
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| CN109521829B (en) | 2023-10-31 |
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