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CN109496351B - 微发光二极管阵列转移方法、制造方法以及显示装置 - Google Patents

微发光二极管阵列转移方法、制造方法以及显示装置 Download PDF

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CN109496351B
CN109496351B CN201780002375.3A CN201780002375A CN109496351B CN 109496351 B CN109496351 B CN 109496351B CN 201780002375 A CN201780002375 A CN 201780002375A CN 109496351 B CN109496351 B CN 109496351B
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CN109496351A (zh
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邹泉波
陈培炫
冯向旭
甘桃
张笑阳
王喆
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Goertek Inc
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Abstract

公开了微发光二极管转移方法、制造方法以及显示装置。所述微发光二极管转移方法包括：通过微型隆起将第一基底上的微发光二极管阵列接合到接收基底上，其中，第一基底是激光透明的；将底部填充物施加到第一基底和接收基底之间的间隙中；从第一基底侧将激光照射到微发光二极管阵列上，以从第一基底剥离微发光二极管阵列；且移除底部填充物。根据一实施例，可以提高在微发光二极管阵列的转移期间的接合强度。

Description

微发光二极管阵列转移方法、制造方法以及显示装置
技术领域
本发明涉及转移微发光二极管阵列的方法、制造显示装置的方法以及显示装置。
背景技术
微发光二极管技术指以高密度集成在基底上的小尺寸的LED阵列。当前，微发光二极管技术开始发展，且在工业中期望的是高质量的微发光二极管产品进入市场。高质量的微发光二极管将对传统显示产品影响深远，诸如已经进入市场的LCD/OLED。
在制造微发光二极管的过程中，微发光二极管阵列首先形成在生长基底上。然后，微发光二极管阵列转移到接收基底，或经由载体基底转移到接收基底。接收基底例如是显示屏。
在现有技术中，微发光二极管阵列能够通过激光剥离(LLO)从一个基底转移到另一基底。
图1示出微发光二极管阵列从第一基底101(载体基底或生长基底)转移到接收基底102的现有技术示例。如图1所示，微发光二极管阵列104形成在第一基底101上。微发光二极管阵列104接合到接收基底102上。例如，微发光二极管阵列104通过焊料接合部105接合到在形成于接收基底102中的TFT(薄膜晶体管)电路103的顶部上的阳极106上。第一基底101是激光透明的。激光107从第一基底101侧照射到微发光二极管阵列104上以剥离所述微发光二极管阵列。
由于微发光二极管阵列中的微发光二极管的尺寸非常小，微发光二极管和接收基底之间的接合强度非常低。特别的，当显示装置的分辨率提高且微发光二极管越来越小时，转移期间的成品率损失增加。
当接合温度升高时，接合强度能够提高。然而，由于微发光二极管和接收基底的热失配，升高的接合温度将显著降低接合质量。在这方面来说，特别对于大面积的微发光二极管转移来说，优选的是降低的接合温度，其中接合强度是关键问题。
因此，本领域需要的是，提出转移微发光二极管阵列的新的解决方案，以处理中在现有技术中的问题中的至少其一。
发明内容
本发明的一个目的是提供转移微发光二极管阵列的新的技术解决方案。
根据本发明的第一方面，提供转移微发光二极管阵列的方法，包括：通过微型隆起将第一基底上的微发光二极管阵列接合到接收基底上，其中，第一基底是激光透明的；将底部填充物施加到第一基底和接收基底之间的间隙中；从第一基底侧将激光照射到微发光二极管阵列上，以从第一基底剥离微发光二极管阵列；且移除底部填充物。
替换地或可选地，所述方法还包括：将第一基底与接收基底分离。
替换地或可选地，第一基底是蓝宝石基底。
替换地或可选地，微型隆起具有低温接合材料。
替换地或可选地，底部填充物是低粘度液体、溶剂、抗蚀剂、胶、聚合物、硅树脂和油脂中的至少其一。
替换地或可选地，在微发光二极管阵列剥离期间，底部填充物是固化的或底部填充物的粘性是增加的。
替换地或可选地，在低气压环境下或真空中施加底部填充物。
替换地或可选地，底部填充物通过化学品、溶剂、底切或相变移除。
根据本发明的第二方面，提供制造显示装置的方法，所述方法包括通过利用根据一实施例的转移微发光二极管阵列的方法而将微发光二极管阵列从第一基底转移到显示装置的接收基底。
根据本发明的第三方面，提供通过利用根据一实施例的制造显示装置的方法而制造的显示装置。
根据一实施例，可以提高在微发光二极管阵列的转移期间的接合强度。
通过以下参考附图对根据本发明的示例性实施例的详细描述，本发明的其他特征及其优点将变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1示出通过激光剥离转移微发光二极管阵列的现有技术示例的示意图。
图2-5示出根据一实施例的将微发光二极管阵列从第一基底转移到接收基底的过程的示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其他例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
在一实施例中，提出在微发光二极管阵列的LLO转移期间施加底部填充物，以提高微发光二极管阵列之间的接合强度。在转移之后能够移除底部填充物。
图2-5示出根据一实施例将微发光二极管阵列从第一基底转移到接收基底的过程的示意图。
如图2所示，在第一基底201上的微发光二极管阵列204通过微型隆起206接合到接收基底202上。第一基底201是激光透明的。例如，第一基底是蓝宝石基底。
微型隆起206可以是电路203的顶部上的阳极，所述电路诸如是接收基底202中的TFT电路。例如，微发光二极管204通过焊料205接合在微型隆起206上。
例如，微型隆起206是低温接合材料的，诸如In、Sn或其他低温金属/合金。微型隆起也可以是导电粘合剂或抗蚀剂。
如图3所示，底部填充物208施加到第一基底201和接收基底202之间的间隙中。例如，底部填充物通过毛细管施加。底部填充物能够在激光剥离期间用作用于微发光二极管204和接收基底202的防护层。
例如，底部填充物208可以是低粘度液体、溶剂、抗蚀剂、胶、聚合物、硅树脂和油脂中的至少其一。
在一示例中，在低气压环境下或真空中施加底部填充物208。以这种方式，能够免除底部填充物中的泡状物或空气。
如图4所示，激光207从第一基底侧照射到微发光二极管阵列上，以从第一基底剥离微发光二极管阵列。
在图4中，激光207照射到选定的微发光二极管204上。选定的微发光二极管构成将转移到接收基底202的微发光二极管阵列204。
在一示例中，在升高的温度下施加底部填充物。升高的温度不如引起显著热失配的温度高。然后，在微发光二极管阵列剥离期间，底部填充物是固化的或底部填充物的粘性是增加的。
替换地，底部填充物将不固化或其粘性将不增加。这将简化处理。
在此，临时底部填充物208被添加到第一基底201和接收基底202之间的间隙中。底部填充物将机械增强两个基底之间的接合。因此，LLO成品率将显著提高。
此外，底部填充物也能够在激光剥离期间用作用于接收基底的防护层。例如，底部填充物防止激光照射到接收基底202上，这可能损坏接收基底202中的电路203。
在此，底部填充物将在没有高温/高强度接合的情况下加固微发光二极管和接收基底之间的接合强度。这将减小由微发光二极管和接收基底之间的热失配引起的负面影响。
底部填充物可以是低粘性抗蚀剂、聚合物、硅树脂、胶或油脂，或底部填充物甚至可以是液体，诸如水、溶剂。底部填充物能够由于表面张力通过毛细管力施加到间隙中。
如图5所示，底部填充物208被移除。例如，底部填充物通过化学品、溶剂、底切或相变移除。然后，底部填充物被冲洗且干燥。
接下来，第一基底201与接收基底202分离。
在另一实施例中，实施例包括制造显示装置的方法。所述制造方法包括通过利用根据如上实施例的转移微发光二极管阵列的方法而将微发光二极管阵列从第一基底转移到显示装置的接收基底。显示装置可以是显示面板、显示屏等。
在另一实施例中，另一实施例包括通过利用根据如上实施例的制造显示装置的方法而制造的显示装置。
与现有技术相比较，由于底部填充物能够提高在激光剥离期间的接合强度和/或能够是用于接收基底的防护层，显示装置将比现有技术中的一个显示装置在相似情况下表现出更好的性能。
在另一实施例中，另一实施例还能够包括电子设备。所述电子设备包含如上的显示装置。例如，电子设备可以是手机、平板电脑等。
虽然已经通过示例详细阐述本发明的一些特定实施例，但是本领域技术人员将理解到上述示例仅旨在是示意性的而非限制本发明的范围。

Claims (10)

1.一种用于转移微发光二极管阵列的方法，包括：
通过微型隆起将第一基底上的微发光二极管阵列接合到接收基底上，其中，第一基底是激光透明的；
将底部填充物施加到第一基底和接收基底之间的间隙中；
从第一基底侧将激光照射到微发光二极管阵列上，以从第一基底剥离微发光二极管阵列；并且
移除底部填充物。
2.根据权利要求1所述的方法，还包括：
将第一基底与接收基底分离。
3.根据权利要求1或2所述的方法，其中，第一基底是蓝宝石基底。
4.根据权利要求1或2所述的方法，其中，微型隆起具有低温接合材料。
5.根据权利要求1或2所述的方法，其中，底部填充物是低粘度液体、溶剂、抗蚀剂、胶、聚合物、硅树脂以及油脂中的至少其一。
6.根据权利要求1或2所述的方法，其中，在微发光二极管阵列被剥离期间，底部填充物是固化的或底部填充物的粘性是增加的。
7.根据权利要求1或2所述的方法，其中，在低气压环境下或真空中施加底部填充物。
8.根据权利要求1或2所述的方法，其中，底部填充物通过化学品、溶剂、底切或相变而被移除。
9.一种制造显示装置的方法，包括通过利用根据权利要求1所述的转移微发光二极管阵列的方法而将微发光二极管阵列从第一基底转移到显示装置的接收基底。
10.一种显示装置，其通过利用根据权利要求9所述的制造显示装置的方法来制造。
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