CN109467159A - Self-powered semiconductor photocatalytic device with WSA position-sensitive structure - Google Patents
Self-powered semiconductor photocatalytic device with WSA position-sensitive structure Download PDFInfo
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- CN109467159A CN109467159A CN201811446640.XA CN201811446640A CN109467159A CN 109467159 A CN109467159 A CN 109467159A CN 201811446640 A CN201811446640 A CN 201811446640A CN 109467159 A CN109467159 A CN 109467159A
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- shaped anode
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 230000001699 photocatalysis Effects 0.000 title claims abstract description 13
- 239000002070 nanowire Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 230000003197 catalytic effect Effects 0.000 abstract description 14
- 238000006555 catalytic reaction Methods 0.000 abstract description 8
- 238000000746 purification Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000007146 photocatalysis Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000008239 natural water Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2201/00—Apparatus for treatment of water, waste water or sewage
- C02F2201/002—Construction details of the apparatus
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
- C02F2305/10—Photocatalysts
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Catalysts (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
具有WSA位敏结构的自供电半导体光电催化器件属于光电催化技术领域。现有半导体光电催化器件不能在日照时间的推移过程中，保持其催化净化效果始终处在最佳状态。本发明其特征在于，在P‑N+硅片的N+区表面交叉分布一组楔形阳极W和一组条形阳极S，楔形阳极W与条形阳极S之间的部分为第三阳极A，楔形阳极W、条形阳极S、第三阳极A由楔形阳极沟道、条形阳极沟道分隔；楔形阳极沟道、条形阳极沟道的沟道宽度a为100～120μm，沟道底部位于P‑区，沟道位于P‑区部分的深度b为50～120μm，在沟道底部分布半导体纳米线光电催化层，半导体纳米线光电催化层的厚度为1～2μm；P‑区至N+区掺杂浓度由稀变浓。本发明能够利用WSA位敏结构使得半导体光电催化器件跟踪日光，确保光能接收量。
A self-powered semiconductor photocatalytic device with a WSA position-sensitive structure belongs to the technical field of photoelectric catalysis. Existing semiconductor photocatalytic devices cannot keep their catalytic purification effect in the best state during the passage of sunshine time. The present invention is characterized in that a group of wedge-shaped anodes W and a group of strip-shaped anodes S are cross-distributed on the surface of the N + region of the P - N + silicon wafer, and the part between the wedge-shaped anode W and the strip-shaped anode S is the third anode A , the wedge-shaped anode W, the strip-shaped anode S, and the third anode A are separated by the wedge-shaped anode channel and the strip-shaped anode channel; the channel width a of the wedge-shaped anode channel and the strip-shaped anode channel is 100-120 μm, and the bottom of the channel It is located in the P - region, the depth b of the channel located in the P - region is 50-120 μm, the semiconductor nanowire photocatalytic layer is distributed at the bottom of the channel, and the thickness of the semiconductor nanowire photo-catalytic layer is 1-2 μm; P - region to N The doping concentration of the + region changes from thin to rich. The invention can utilize the WSA position-sensitive structure to make the semiconductor photoelectric catalytic device track sunlight and ensure the light energy receiving amount.
Description
Technical field
The present invention relates to a kind of self-powered semiconductor photoelectrocatalysielectrode device with WSA sensing structures, can be used to be catalyzed
Purifying water body realizes self-powered using illumination, improves catalytic efficiency, meanwhile, WSA sensing structure (wedge strip therein
Anode, wedge strip anode) enable the semiconductor photoelectrocatalysielectrode device to track daylight, it is ensured that and luminous energy reception amount belongs to photoelectricity
Catalysis technical field.
Background technique
Semiconductor photoelectrocatalysielectrode technology starts from the TiO to come out in 19722The purification of (titanium dioxide) catalysis sewage.The technology
By TiO2Photocatalytic water reaction occurs under conditions of illumination, plays catalytic action with this as electrode for film.Later, semiconductor
Band theory is used to interpret TiO2Photocatalysis mechanism, when incident photon energy is greater than TiO2When semiconductor forbidden bandwidth, it is located at
The electrons of valence band transit to conduction band, and electronics becomes the high activity electronics with reproducibility, while generating in valence band positively charged
The hole with oxidisability.But, during electrons and holes can be to surface migration, a part of electrons and holes can be sent out
It is compound in raw body, also, Carrier recombination rate is higher, leads to TiO2Photocatalysis efficiency reduces.It is found that ZnO, WO3、CdS、
ZnS etc. also all can serve as conductor photocatalysis material use, and still, Carrier recombination rate is equally higher, and often higher than
TiO2.The prior art passes through TiO2It is modified to reduce Carrier recombination rate, improves quantum efficiency.Modified measures include reducing crystal grain
Granularity, depositing noble metal, combines semiconductors coupling, electrochemistry with photocatalysis at the suitable crystal form of selection.Experimental result table
Bright, electrochemistry is combined with photocatalysis, that is, photoelectrocatalysis can be obviously improved the quantum efficiency in reaction, and then improve and urge
Change efficiency.
With TiO2For, realize that photoelectrocatalysis will first make TiO2Photo cathode, such as suspended state photo cathode, fixed film
Photo cathode and transparent fixed film photo cathode etc., by external circuit plus bias voltage, so that electronics is more easier to leave
TiO2Surface, to improve catalytic efficiency.Such as make TiO2Fixed film photo cathode, lead connect external power supply, add 10~
The biasing bias of 1000mV, is used for degradation of phenol, and catalytic efficiency can be improved 20% or more.However, production film photoelectric anode,
External power supply provides bias voltage, this makes photoelectrocatalysis device architecture become complicated, it is also necessary to extra consumption energy, then have just
It is the catalysis limited area of the catalysis material of filminess, and is easy inactivation.
There is also a technical problems for the prior art, when semiconductor photoelectrocatalysielectrode device is used for natural water catalytic purification
When, realize that the light source of photoelectrocatalysis is daylight, and as the time from morning to night elapses, the exposure intensity and angle of daylight are all changing
Become, the catalyticing purifying effect of semiconductor photoelectrocatalysielectrode device is not at one's best always.
Summary of the invention
In order to simplify the structure of semiconductor photoelectrocatalysielectrode device, green energy conservation, into one under the premise of improving catalytic efficiency
Step increases catalysis area, extends the service life of photoelectrocatalysimaterial material, meanwhile, keep semiconductor photoelectrocatalysielectrode device in use always
It is in best catalytic purification state, we have invented a kind of self-powered semiconductor photoelectrocatalysielectrode devices with WSA sensing structures.
The self-powered semiconductor photoelectrocatalysielectrode device with WSA sensing structures of the present invention is it is characterized in that, such as Fig. 1~figure
Shown in 3, in P-N+The N of silicon wafer 1+Area's surface crosswise is distributed one group of wedge shape anode W and one group of bar shaped anode S, wedge-shaped anode W and item
Part between shape anode S is third anode A, and wedge-shaped anode W, bar shaped anode S, third anode A are by wedge-shaped anode channels 2, item
Shape anode channels 3 separate；Wedge-shaped anode channels 2, bar shaped anode channels 3 channel width a be 100~120 μm, trench bottom position
In P-Area, channel are located at P-The depth b of area part is 50~120 μm, is distributed semiconductor nanowires photoelectrocatalysis layer in trench bottom
4, semiconductor nanowires photoelectrocatalysis layer 4 with a thickness of 1~2 μm；P-Area is to N+Area's doping concentration is thickened by dilute.
The present invention its have technical effect that, the semiconductor photoelectrocatalysielectrode device 5 of the present invention of actual fabrication it is rounded or
Rectangle, breadth wise dimension are usually 50mm, receive illumination side in semiconductor photoelectrocatalysielectrode device 5 and arrange lens 6, as shown in figure 4,
The two arranged in co-axial alignment and positional relationship is fixed, 6 diameter of lens are 500~1000mm, and material is optical plastic, are converged by lens 6
It is 20~30mm that poly- daylight, which falls in semiconductor photoelectrocatalysielectrode device 5 and receives 7 diameter of hot spot of illumination side, as shown in Figure 5.Though
Right hot spot 7 does not cover semiconductor photoelectrocatalysielectrode device 5 all, still, is sufficient for by the highlighted hot spot 7 that optically focused obtains
Photoelectrocatalysis purification and the requirement of PN junction self-powered, meanwhile, the hot spot 7 of the scale can also be covered simultaneously in WSA sensing structures
At least two in three anodes, meet the quick requirement in position.
Semiconductor photoelectrocatalysielectrode device 5 is placed in which in catalytic purification water body, as shown in Fig. 3~Fig. 5, hot spot 7 is irradiated to
The semiconductor nanowires photoelectrocatalysis layer 4 contacted with water body generates photoelectrocatalysis effect, is achieved in water body purification.Semiconductor
Nanowire photodiode Catalytic Layer 4 is covered with the bottom of wedge-shaped anode channels 2, bar shaped anode channels 3, and photoelectrocatalysimaterial material is in nano wire
Form, therefore, semiconductor nanowires photoelectrocatalysis layer 4 are sufficiently large with the contact area of water body, much larger than existing filminess
Catalysis material, and the service life is long.Meanwhile light is also irradiated to P-N+Knot, it is upper it is dense under dilute gradient doping P-N+Silicon wafer facilitates fastly
Speed generates electromotive force, then is formed into a loop by water body, powers for semiconductor nanowires photoelectrocatalysis layer 4, reduces in ultraviolet lighting
The recombination rate of the light induced electron and hole that generate in lower semiconductor nanowire photodiode Catalytic Layer 4 is penetrated, catalytic efficiency is improved.As it can be seen that
For the semiconductor photoelectrocatalysielectrode device of the present invention without separately connecing power supply, structure is simple.During the catalytic purification to natural water,
As the time from morning to night elapses, the exposure intensity and angle of daylight are all changing, and hot spot 7 is also in movement, wedge-shaped anode W, item
Shape anode S, third anode A pass through contact conductor output light electric current I respectivelyW、IS、IA, it is transferred to operational amplifier amplification, operation,
Position of the hot spot 7 in WSA sensing structures is obtained, such as judges that hot spot 7 will remove WSA sensing structures, operational amplifier output
Signal is controlled to posture servo mechanism, the posture of synchronous correction semiconductor photoelectrocatalysielectrode device 5 and lens 6, so that semiconductor light
The catalyticing purifying effect of electro-catalysis device 5 is at one's best always.
Detailed description of the invention
Fig. 1 is the P for making the semiconductor photoelectrocatalysielectrode device of the present invention-N+Silicon wafer structure of the main view.Fig. 2 is
The semiconductor photoelectrocatalysielectrode device architecture schematic top plan view of the present invention.Fig. 3 is the semiconductor photoelectrocatalysielectrode device architecture of the present invention
Partial enlargement main view schematic cross-sectional view, the figure are used as Figure of abstract simultaneously；The figure also illustrates the semiconductor photoelectrocatalysielectrode of the present invention
The working condition of device.Fig. 4 is that the semiconductor photoelectrocatalysielectrode device of the present invention and lens cooperate working state schematic representation.Fig. 5 is
Semiconductor photoelectrocatalysielectrode device and the lens cooperation of the present invention obtains the quick effect diagram in position using hot spot.
Specific embodiment
The self-powered semiconductor photoelectrocatalysielectrode device with WSA sensing structures of the present invention is as shown in FIG. 1 to 3, in P-N+
The N of silicon wafer 1+Area's surface crosswise is distributed one group of wedge shape anode W and one group of bar shaped anode S, P-N+Silicon wafer 1 is 600 μm thick, N+Area 20 μ of thickness
M, the part between wedge-shaped anode W and bar shaped anode S is third anode A, and wedge-shaped anode W, bar shaped anode S, third anode A are by wedge
Shape anode channels 2, bar shaped anode channels 3 separate；Wedge-shaped anode channels 2, bar shaped anode channels 3 channel width a be 100~
120 μm, such as 100 μm, trench bottom is located at P-Area, channel are located at P-The depth b of area part is 50~120 μm, such as 120 μm, in ditch
Road bottom be distributed semiconductor nanowires photoelectrocatalysis layer 4, semiconductor nanowires photoelectrocatalysis layer 4 with a thickness of 1~2 μm, such as 2 μ
M, the semiconductor nanowires are TiO2、ZnO、WO3, CdS ZnS nano wire；P-Area is to N+Area's doping concentration is thickened by dilute.
Claims (2)
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| CN201811446640.XA CN109467159B (en) | 2018-11-29 | 2018-11-29 | Self-powered semiconductor photocatalytic device with WSA position-sensitive structure |
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| CN201811446640.XA CN109467159B (en) | 2018-11-29 | 2018-11-29 | Self-powered semiconductor photocatalytic device with WSA position-sensitive structure |
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| CN109467159A true CN109467159A (en) | 2019-03-15 |
| CN109467159B CN109467159B (en) | 2021-10-01 |
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Citations (6)
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|---|---|---|---|---|
| CN101575713A (en) * | 2009-06-19 | 2009-11-11 | 新奥科技发展有限公司 | Optical anode used for hydrogen production by photoelectrochemistry decomposition water and preparation method thereof |
| CN101960611A (en) * | 2008-02-29 | 2011-01-26 | 国际商业机器公司 | Photovoltaic devices with high aspect ratio nanostructures |
| CN101993129A (en) * | 2010-11-02 | 2011-03-30 | 上海交通大学 | Method for treating photoelectrocatalysis of organic wastewater through sharply-structured light anode and photoelectricity rotary disc |
| CN102280588A (en) * | 2011-08-02 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof |
| CN104090290A (en) * | 2014-07-25 | 2014-10-08 | 中国科学技术大学 | Polar coordinate reading type two-dimensional position sensitive detector with double wedge-strip anodes |
| US20150267308A1 (en) * | 2010-04-30 | 2015-09-24 | Adele Tamboli | Conformally coated wire array photoelectrodes for photoelectrochemical fuel generation |
-
2018
- 2018-11-29 CN CN201811446640.XA patent/CN109467159B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960611A (en) * | 2008-02-29 | 2011-01-26 | 国际商业机器公司 | Photovoltaic devices with high aspect ratio nanostructures |
| CN101575713A (en) * | 2009-06-19 | 2009-11-11 | 新奥科技发展有限公司 | Optical anode used for hydrogen production by photoelectrochemistry decomposition water and preparation method thereof |
| US20150267308A1 (en) * | 2010-04-30 | 2015-09-24 | Adele Tamboli | Conformally coated wire array photoelectrodes for photoelectrochemical fuel generation |
| CN101993129A (en) * | 2010-11-02 | 2011-03-30 | 上海交通大学 | Method for treating photoelectrocatalysis of organic wastewater through sharply-structured light anode and photoelectricity rotary disc |
| CN102280588A (en) * | 2011-08-02 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof |
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Non-Patent Citations (1)
| Title |
|---|
| 李景镇: "《光学手册》", 31 July 2010, 陕西科学技术出版社 * |
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