CN109461665A - The method for improving the semiconductor device reliability of composition epoxy resin encapsulation - Google Patents
The method for improving the semiconductor device reliability of composition epoxy resin encapsulation Download PDFInfo
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- CN109461665A CN109461665A CN201811288883.5A CN201811288883A CN109461665A CN 109461665 A CN109461665 A CN 109461665A CN 201811288883 A CN201811288883 A CN 201811288883A CN 109461665 A CN109461665 A CN 109461665A
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- Prior art keywords
- epoxy resin
- composition epoxy
- method described
- phenol
- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 66
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 65
- 239000000203 mixture Substances 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005538 encapsulation Methods 0.000 title claims abstract description 8
- 239000011265 semifinished product Substances 0.000 claims abstract description 28
- 239000012530 fluid Substances 0.000 claims abstract description 17
- 239000011368 organic material Substances 0.000 claims abstract description 17
- 238000005507 spraying Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 20
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 13
- 229920001568 phenolic resin Polymers 0.000 claims description 13
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 12
- 239000005011 phenolic resin Substances 0.000 claims description 12
- -1 phosphine compound Chemical class 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000003595 mist Substances 0.000 claims description 10
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 6
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 5
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 claims description 4
- 239000001993 wax Substances 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- 239000004203 carnauba wax Substances 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 150000004693 imidazolium salts Chemical class 0.000 claims description 3
- 239000011256 inorganic filler Substances 0.000 claims description 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 3
- SBGKCOJQKBHFTO-UHFFFAOYSA-N (2-nonylphenyl)phosphane Chemical class CCCCCCCCCC1=CC=CC=C1P SBGKCOJQKBHFTO-UHFFFAOYSA-N 0.000 claims description 2
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 claims description 2
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229930185605 Bisphenol Natural products 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004844 aliphatic epoxy resin Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000007859 condensation product Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 239000003063 flame retardant Substances 0.000 claims description 2
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 150000004780 naphthols Chemical class 0.000 claims description 2
- SCWKRWCUMCMVPW-UHFFFAOYSA-N phenyl n-methylcarbamate Chemical compound CNC(=O)OC1=CC=CC=C1 SCWKRWCUMCMVPW-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 150000003512 tertiary amines Chemical class 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 2
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 claims description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N 1H-imidazole Chemical group C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims 1
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 claims 1
- 125000002723 alicyclic group Chemical group 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000012856 packing Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 description 11
- 238000000465 moulding Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- XDKUKGIJDNUFGK-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CN=C[N]1 XDKUKGIJDNUFGK-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 101001014562 Homo sapiens Male-specific lethal 3 homolog Proteins 0.000 description 1
- 102100032515 Male-specific lethal 3 homolog Human genes 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006384 oligomerization reaction Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention provides a kind of methods of the semiconductor device reliability of raising composition epoxy resin encapsulation, it is characterized by: key step is as follows: the good semiconductor frame semi-finished product of die bond and routing are sprayed using a kind of fluid organic material in chip, microscope carrier, conducting wire and routing area；Semi-finished product after spraying stand 10-60min at normal temperature, solidify 1-3h at 150-180 DEG C, then normally encapsulate through composition epoxy resin.Method for packaging semiconductor provided by the present invention, use common or poor reliability composition epoxy resin, by a kind of processing of fluid organic material, the cementability between interface can be improved, can get the semiconductor packing device of the higher reliability of good reflux-resisting welded, resistance to moisture.
Description
Technical field
The present invention relates to a kind of methods of the semiconductor device reliability of raising composition epoxy resin encapsulation.
Background technique
In recent years, semicon industry develops rapidly, and is all using electronic product everywhere in life, but civilian semiconductor product
Product poor reliability, service life are shorter.People are higher and higher to electronic product requirement, this just proposes the reliability of civilian semiconductor
Increasingly higher demands.Civilian semiconductor is packaged using composition epoxy resin substantially, composition epoxy resin because price,
The factors such as materials'use, formula, reliability itself can be lower than metal and ceramic package.
Traditional method for packaging semiconductor, can only be by the reliability for improving composition epoxy resin, Lai Tigao semiconductor
The reliability of device, but by price, it is unable to satisfy requirement of the market to semiconductor reliability.Packaged type method is ground
Study carefully the important research project for becoming encapsulation market at present.
Summary of the invention
The purpose of the present invention is by new molded package method, the composition epoxy resin of use reliability rank difference,
After solving current semiconductor packages, global reliability is poor: a kind of semiconductor packages side of resistance to moisture, reflux-resisting welded layering difference
Method.
Technical scheme is as follows:
The method for improving the semiconductor device reliability of composition epoxy resin encapsulation, key step is as follows: by die bond and
The good semiconductor frame semi-finished product of routing are sprayed fluid organic material in chip, microscope carrier, conducting wire and routing area using spray gun
It applies；Semi-finished product after spraying stand 10-60min at normal temperature, solidify 1-3h at 150-180 DEG C, then through epoxy composite
Object normally encapsulates.
The component and content of the composition epoxy resin of the semiconductor-sealing-purpose are as follows:
The epoxy resin is the monomer, oligomer or polymer for having 2 or more epoxy groups in 1 epoxy molecule,
Its molecular weight and molecular structure are not particularly limited.The epoxy resin can be selected from o-cresol formaldehyde epoxy resin, bisphenol-A type ring
Oxygen resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin,
One or more of open chain aliphatic epoxy resin, cycloaliphatic epoxy resin, heterocyclic-type epoxy resin etc..
The curing agent phenolic resin is the monomer, oligomer or polymerization that 1 phenolic aldehyde intramolecular has 2 or more hydroxyls
Object, molecular weight and molecular structure are not particularly limited.The phenolic resin can be selected from phenol linear phenolic resin and its spread out
Biology, phenyl methylcarbamate linear phenolic resin and its derivative, monohydroxy or dihydroxy naphthlene phenolic resin and its derivative, paraxylene
One or more of with the copolymer of the condensation product of phenol or naphthols, dicyclopentadiene and phenol etc..
The inorganic filler is not particularly limited.The inorganic filler can be micro- selected from fine silica powder, aluminium oxide
One or more of powder, titanium oxide fine powder, silicon nitride powder, aluminium nitride micro mist etc..Fine silica powder can be crystal type
Fine silica powder or fusion fine silica powder；The fusion fine silica powder can be angular micro mist or ball-type
Micro mist.Wherein, it is preferable to use the fusion fine silica powder of ball-type.Above-mentioned crystalline sillica micro mist and fusion dioxy
SiClx micro mist may be used alone or in combination.In addition, the surface of the fine silica powder can be used it is silane coupled
Agent is surface-treated (high-speed stirred mixing).
The curing accelerator is not particularly limited as long as can promote the curing reaction of epoxy group and phenolic hydroxyl group.Institute
The content of the curing accelerator stated generally in the composition is 0.16~0.8wt%；Imidazolium compounds, tertiary amine chemical combination can be selected from
One or more of object and organic phosphine compound etc..
The imidazolium compounds is selected from 2-methylimidazole, 2,4- methylimidazole, 2-ethyl-4-methylimidazole, 2- benzene
One or more of base imidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles etc..
The tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (dimethylamino first
One of base) phenol, (dimethylamino methyl) phenol of 2,4,6- tri- and 1,8- diazabicyclo (5,4,0) endecatylene -7 etc.
Or it is several.
The organic phosphine compound is selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (to methylbenzene
One or more of base) phosphine and three (nonyl phenyl) phosphines etc..
The content of the release agent generally in the composition is 0.3~0.5wt%；Preferred content is 0.4wt%.It can be with
Selected from one or more of Brazil wax, synthetic wax and mineral matter wax.
The general content in the composition of described low stress modified dose is 0.7~0.9wt%；Preferred content is
0.8wt%.Such as liquid silicone oil, silicone rubber powder or their mixture.
The content of the colorant generally in the composition is 0.4~0.6wt%；Preferred content is 0.5wt%.Such as charcoal
It is black.
The content of the fire retardant generally in the composition is 0.5~3wt%, including brominated epoxy resin and three oxidations
The mixture of two antimony, wherein the mass ratio of brominated epoxy resin and antimony oxide is 5:1.
The content of the silane coupling agent generally in the composition is 0.4~0.6wt%；Preferred content is 0.5wt%.
γ-glycidyl propyl ether trimethoxy silane, γ aminopropyltriethoxy silane, γ-mercaptopropyi front three can be selected from
One or more of oxysilane and γ-aminopropyltrimethoxysilane.
Various raw materials, production involved in the composition epoxy resin and encapsulation process of semiconductor-sealing-purpose of the invention
Product commercially obtain.
Technical contribution of the invention is: the semiconductor device encapsulated using a kind of fluid organic material to composition epoxy resin
The semi-finished product of part are sprayed, to improve the reliability of semiconductor devices.
The fluid organic material main component is a kind of organic matter containing silicon and nitrogen, in device or object after heated solidification
Surface forms a kind of film, which has certain moisture-barrier and dissociated ion effect, and improves chip and epoxy
Adhesive strength between resin combination, to improve the reliability of semiconductor devices.
Method for packaging semiconductor provided by the present invention can be mentioned using common or poor reliability composition epoxy resin
Cementability between high interface can get the semiconductor packing device of the higher reliability of good reflux-resisting welded, resistance to moisture.
Specific embodiment
The present invention is further illustrated with reference to embodiments, but they and do not constitute a limitation of the invention, it is right
In those skilled in the art, some nonessential variations and adjustment done according to the present invention are accordingly to be regarded as falling in of the invention
In protection scope.
Composition epoxy resin ingredient is as follows in embodiment:
Fluid organic material is that (Beijing Kehua New Material Science and Technology Co., Ltd.'s manufacture, those skilled in the art can business by KH-S9660
Purchase)
O-cresol formaldehyde epoxy resin A1 (Japanese DIC Corporation system " N-665 ")
Phenol linear phenolic resin B1 (Japanese DIC Corporation system " TD-2131 ")
2-methylimidazole C1
1,8- diazabicyclo (5,4,0) endecatylene -7C2
Fine silica powder D (d50 is 25 μm)
Brazil wax E
γ-glycidyl propyl ether trimethoxy silane F
Carbon black G
Liquid silicone oil H1
Silicone rubber powder H2
Mixture (mass ratio 5:1) I of brominated epoxy resin and antimony oxide
Biphenyl type epoxy resin A2 (Japan Epoxy Resins Co., Ltd. system " YX-4000H ")
Dicyclopentadiene type epoxy Resin A 3 (Japanese DIC Corporation system " HP-7200 ")
Phenol alkyl phenolic resin (phenol linear phenolic resin derivative) B2 (Mitsui Chemicals, Inc. system
“XLC-4L”)
Triphenylphosphine C3
Embodiment 1
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 10min at normal temperature, solidify 1h at 150 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 2
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 30min at normal temperature, solidify 1h at 150 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 3
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 60min at normal temperature, solidify 1h at 150 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 4
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 50min at normal temperature, solidify 2h at 160 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 5
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 60min at normal temperature, solidify 1h at 160 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 6
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 10min at normal temperature, solidify 1h at 180 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 7
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 20min at normal temperature, solidify 3h at 150 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 8
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 30min at normal temperature, solidify 2h at 170 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 9
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 30min at normal temperature, solidify 3h at 150 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Embodiment 10
By the good semiconductor frame SOP-8 semi-finished product of die bond and routing, using spray gun by a kind of fluid organic material chip,
Microscope carrier, conducting wire and routing area are sprayed；Semi-finished product after spraying stand 40min at normal temperature, solidify 3h at 160 DEG C, then
It is normally encapsulated through composition epoxy resin.
Composition epoxy resin formula composition is shown in Table 1, and gained semiconductor packages SOP-8 device after molding carries out performance and comments
Valence the results are shown in Table 1.
Comparative example 1~10
The good semiconductor frame SOP-8 semi-finished product of normal die bond, routing, are directly sealed using composition epoxy resin
Dress.
The same Examples 1 to 10 of composition epoxy resin formula composition, the same above-described embodiment of method of evaluating performance, performance evaluation
It the results are shown in Table 2.
Table 1: Examples 1 to 10 semiconductor devices SOP-8 Evaluation results and composition epoxy resin formula composition (with
Weight percent meter)
Table 2: the Evaluation results of comparative example
It can be seen that by the Evaluation results of above-described embodiment and comparative example, half obtained using packaging method of the invention
Conductor device can be mentioned obviously compared with the semiconductor devices for using conventional packaging method to prepare using method of the invention
Bonding force between high interface makes the semiconductor device reliability being obtained by the present invention more sorrow --- i.e. after MSL3 grades of examination
Stratified proportional is less.
Claims (10)
1. the method for improving the semiconductor device reliability of composition epoxy resin encapsulation, it is characterised in that: key step is as follows:
By the good semiconductor frame semi-finished product of die bond and routing, sprayed using fluid organic material in chip, microscope carrier, conducting wire and routing area
It applies；Semi-finished product after spraying stand 10-60min at normal temperature, solidify 1-3h at 150-180 DEG C, then through epoxy composite
Object normally encapsulates.
2. method according to claim 1, it is characterised in that: the main component of the composition epoxy resin and contain
Amount are as follows:
The epoxy resin is selected from o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear phenol
Formaldehyde epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, alicyclic epoxy
One or more of resin, heterocyclic-type epoxy resin.
3. according to the method described in claim 2, it is characterized by: the phenolic resin be selected from phenol linear phenolic resin and
Its derivative, phenyl methylcarbamate linear phenolic resin and its derivative, monohydroxy or dihydroxy naphthlene phenolic resin and its derivative, to two
Toluene and one or more of phenol or condensation product, dicyclopentadiene and the copolymer of phenol of naphthols.
4. according to the method described in claim 2, it is characterized by: the inorganic filler is selected from fine silica powder, oxidation
One or more of aluminium micro mist, titanium oxide fine powder, silicon nitride powder, aluminium nitride micro mist.
5. according to the method described in claim 4, it is characterized by: the fine silica powder is selected from crystalline sillica
Micro mist, fusion fine silica powder or their mixture；The fusion fine silica powder is angular micro mist or ball
Type micro mist.
6. according to the method described in claim 2, it is characterized by: the curing accelerator is selected from imidazolium compounds, tertiary amine
One or more of compound and organic phosphine compound.
7. according to the method described in claim 6, it is characterized by: the imidazolium compounds is selected from 2-methylimidazole, 2,4-
In methylimidazole, 2-ethyl-4-methylimidazole, 2- phenylimidazole, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles
One or more；
The tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (dimethylamino methyl) benzene
One or more of phenol, (dimethylamino methyl) phenol of 2,4,6- tri- and 1,8- diazabicyclo (5,4,0) endecatylene -7；
The organic phosphine compound is selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (p-methylphenyls)
One or more of phosphine and three (nonyl phenyl) phosphines.
8. according to the method described in claim 2, it is characterized by: the release agent be selected from Brazil wax, synthetic wax and
One or more of mineral matter wax, the content of the release agent are 0.4wt%.
9. according to the method described in claim 2, it is characterized by: described low stress modified dose is liquid silicone oil, silicon rubber
Powder or their mixture, low stress modified dose of the content are 0.8wt%.
10. according to the method described in claim 2, it is characterized by:
The colorant is carbon black；The content of the colorant is 0.5wt%；
The fire retardant is the oxidation of the mixture of brominated epoxy resin and antimony oxide, wherein brominated epoxy resin and three two
The mass ratio of antimony is 5:1；
The silane coupling agent is selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino propyl-triethoxysilicane
One or more of alkane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane；The silane is even
The content for joining agent is 0.5wt%.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110396386A (en) * | 2019-07-26 | 2019-11-01 | 上海本诺电子材料有限公司 | A kind of chip sealing insulative glue and preparation method thereof with high thermal conductivity coefficient |
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