CN109346566A - A kind of gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof - Google Patents
A kind of gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
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- CN109346566A CN109346566A CN201811014548.6A CN201811014548A CN109346566A CN 109346566 A CN109346566 A CN 109346566A CN 201811014548 A CN201811014548 A CN 201811014548A CN 109346566 A CN109346566 A CN 109346566A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 15
- 150000002500 ions Chemical class 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000007924 injection Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
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- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
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- 230000008901 benefit Effects 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
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- -1 indium aluminum nitrogen Chemical compound 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes that substrate, electronics offer layer, active layer and hole provide layer, the electronics provides layer, the active layer and hole offer layer and stacks gradually over the substrate, the electronics provides layer including the first sublayer and is inserted in the second sublayer of at least one of first sublayer, the material of first sublayer uses the gallium nitride of doped silicon, the material of second sublayer uses the gallium nitride of doped carbon, and the thickness of first sublayer is greater than 1/2 that the electronics provides the thickness of layer.The present invention realizes that the plane of electronics is sprawled, reduces electronics and provide the series resistance of layer, enhance the antistatic effect of bottom by being inserted into the gallium nitride layer of at least one doped carbon in the gallium nitride layer of doped silicon.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its preparation
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
Gallium nitride (GaN) base LED is set to receive more and more attention and study.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of substrate generally selects sapphire, and the material of n type semiconductor layer etc. generally selects gallium nitride, sapphire and nitrogen
Change gallium is dissimilar materials, and differences between lattice constant is larger, there is biggish lattice mismatch between the two.The stress that lattice mismatch generates
It more can be introduced into gallium nitride with defect, and constantly be accumulated in epitaxial process, cause to accumulate in n type semiconductor layer more
Stress and defect.
Epitaxial wafer carries out in the positive cartridge chip or flip-chip of chip technology formation simultaneously, the electricity in n type semiconductor layer
Son is migrated along the direction vertical with the stacking direction of epitaxial wafer.In order to avoid the forward direction of positive cartridge chip or flip-chip
Overtension, n type semiconductor layer would generally be thicker, are easy to draw when the N type dopants such as heavily-doped Si in this way in n type semiconductor layer
Enter more defect and impurity.
More defect influences whether the extension of electronics in n type semiconductor layer, leads to point of the electronics in n type semiconductor layer
Cloth is uneven, influences the antistatic effect of LED.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
The problem of extension for thering is defect more in technology n type semiconductor layer to influence whether electronics.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, electronics provides layer, active layer and hole provide layer, and the electronics provides layer, described active
Layer and the hole provide layer and stack gradually over the substrate, and the electronics provides layer including the first sublayer and is inserted in institute
State the second sublayer of at least one of first sublayer, the material of first sublayer uses the gallium nitride of doped silicon, and described second
The material of sublayer uses the gallium nitride of doped carbon, and the thickness of first sublayer is greater than 1/2 that the electronics provides the thickness of layer.
Optionally, second sublayer with a thickness of 2nm~50nm.
Preferably, the quantity of second sublayer is 3~50.
Optionally, the doping concentration of carbon is dense greater than the doping of element silicon in first sublayer in second sublayer
Degree.
Preferably, the doping concentration of carbon is 10 in second sublayer18cm-3~1020cm-3。
On the other hand, the embodiment of the invention provides a kind of preparation method of gallium nitride based LED epitaxial slice, institutes
Stating preparation method includes:
One substrate is provided；
Electronics is sequentially formed over the substrate, and layer, active layer and hole offer layer are provided；
Wherein, the electronics provides layer and includes the first sublayer and at least one of be inserted in first sublayer second
Sublayer, the material of first sublayer use the gallium nitride of doped silicon, and the material of second sublayer uses the nitridation of doped carbon
Gallium, the thickness of first sublayer are greater than 1/2 that the electronics provides the thickness of layer.
Optionally, the forming process of second sublayer includes:
Grow undoped gallium nitride layer；
Using ion implantation technique in the gallium nitride layer doped carbon, formed the second sublayer.
Preferably, the dosage of ion implanting is 1018/cm2~1020/cm2, the energy of ion implanting be 50keV~
150keV。
Further, the preparation method further include:
Second sublayer is made annealing treatment.
Preferably, the temperature of annealing is 800 DEG C~950 DEG C.
Technical solution provided in an embodiment of the present invention has the benefit that
By being inserted into the gallium nitride layer of at least one doped carbon, the gallium nitride layer of doped silicon in the gallium nitride layer of doped silicon
Thickness be greater than electronics provide layer thickness 1/2, therefore electronics provide layer the electronics of recombination luminescence can be provided for active layer.
The electric conductivity of the gallium nitride layer of doped carbon is weaker simultaneously, promotes the electronics in the gallium nitride layer of doped silicon extending transversely, thus real
The plane of existing electronics is sprawled, and is reduced electronics and is provided the series resistance of layer, enhances the antistatic effect of bottom.And the nitrogen of doped carbon
The antistatic effect for changing gallium layer is stronger, therefore the antistatic effect of electronics offer layer entirety is increased dramatically, the forward direction of chip
Voltage is reduced.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is that electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 3 is a kind of process of the preparation method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
Layer 20, active layer 30 and hole being provided including substrate 10, electronics, layer 40 being provided, electronics provides layer 20, active layer 30 and hole and mentions
It is sequentially laminated on substrate 10 for layer 40.
Fig. 2 provides the structural schematic diagram of layer for electronics provided in an embodiment of the present invention.Referring to fig. 2, in the present embodiment, electric
It includes the first sublayer 21 and second sublayer 22 that at least one of is inserted in the first sublayer 21 that son, which provides layer 20,.First sublayer 21
Material use the gallium nitride of doped silicon, the material of the second sublayer 22 uses the gallium nitride of doped carbon.The thickness of first sublayer 21
Greater than the 1/2 of the thickness that electronics provides layer 20.
The embodiment of the present invention in the gallium nitride layer of doped silicon by being inserted into the gallium nitride layer of at least one doped carbon, doping
The thickness of the gallium nitride layer of silicon is greater than 1/2 that electronics provides the thickness of layer, therefore electronics provides layer and can provide for active layer again
Close luminous electronics.The electric conductivity of the gallium nitride layer of doped carbon is weaker simultaneously, promotes the electronics in the gallium nitride layer of doped silicon horizontal
To extension, to realize that the plane of electronics is sprawled, reduces electronics and the series resistance of layer is provided, enhance the antistatic effect of bottom.
And the antistatic effect of the gallium nitride layer of doped carbon is stronger, therefore the antistatic effect of electronics offer layer entirety is substantially mentioned
It rises, the forward voltage of chip is reduced.In addition, lattice is more between the gallium nitride layer of doped carbon and the gallium nitride layer of doped silicon
Matching, will not cause adverse effect to the crystal quality of epitaxial wafer entirety.
Optionally, the thickness of the second sublayer 22 can be 2nm~50nm, preferably 26nm.
If the thickness of the second sublayer is less than 2nm, may can not promote in the first sublayer since the second sublayer is relatively thin
Electronics it is extending transversely, cause electronics provide layer antistatic effect can not effectively be promoted；If the thickness of the second sublayer is greater than
50nm may then be influenced in electron injection active layer since the second sublayer is thicker, the final luminous efficiency for reducing LED.
Preferably, the quantity of the second sublayer 22 can be 3~50, preferably 27.
If the quantity of the second sublayer less than 3, can not may effectively be promoted since the quantity of the second sublayer is very little
The antistatic effect of electronics offer layer；If the quantity of the second sublayer be greater than 50, may due to the second sublayer quantity too
It causes technique excessively complicated more, increases production cost.
Further, it can be 1 μm~5 μm, preferably 3 μm that electronics, which provides the thickness of layer 20,.
If electronics provides the thickness of layer less than 1 μm, the forward direction electricity of LED may be led to since electronics offer layer is relatively thin
It presses higher；If the thickness that electronics provides layer is greater than 5 μm, the waste of material may be caused since electronics offer layer is thicker.
Optionally, the doping concentration of carbon can be dense greater than the doping of element silicon in the first sublayer 21 in the second sublayer 22
Degree.The doping concentration of carbon is higher in second sublayer, can to avoid the second sublayer electric conductivity it is too weak and influence electronics note
Enter in active layer.
Preferably, the doping concentration of carbon can be 10 in the second sublayer 2218cm-3~1020cm-3, preferably 1019cm-3。
If the doping concentration of carbon is less than 10 in the second sublayer18cm-3, then may be due to carbon in the second sublayer
Doping concentration it is lower and the electronics in the first sublayer can not be promoted extending transversely, cause electronics provide the antistatic effect of layer without
Method is effectively promoted；If the doping concentration of carbon is greater than 10 in the second sublayer20cm-3, then may be due to carbon member in the second sublayer
The doping concentration of element is higher and influences the Lattice Matching between the first sublayer and the second sublayer, reduces the crystal matter of epitaxial wafer entirety
Amount.
Further, the doping concentration of element silicon can be 10 in the first sublayer 2118cm-3~1019cm-3, preferably 5*
1018cm-3。
If the doping concentration of element silicon is less than 10 in the first sublayer18cm-3, then may be due to element silicon in the first sublayer
Doping concentration it is lower and to cause electronics to provide the electron amount that layer provides less, and then influence electronics and provide layer to active layer
Middle injection electronics；If the doping concentration of element silicon is greater than 10 in the first sublayer19cm-3, then may be due to silicon member in the first sublayer
The doping concentration of element is higher and influences the crystal quality of epitaxial wafer entirety, the final luminous efficiency for reducing LED.
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is
[0001] sapphire.Active layer 30 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built
Alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, what quantum was built
Material can use gallium nitride.The material that hole provides layer 40 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of Quantum Well can be 2.5nm~3.5nm, preferably 3nm；Quantum build thickness can be
9nm~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~15
It is a, preferably 10.The thickness that hole provides layer 40 can be 100nm~800nm, preferably 450nm；Hole is provided in layer 40
The doping concentration of P-type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 51, buffer layer
51 settings provide between layer 20 in substrate 10 and electronics, to alleviate the stress that lattice mismatch generates between substrate material and gallium nitride
And defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 51 can use gallium nitride.
Further, the thickness of buffer layer 51 can be 15nm~35nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
52, the setting of undoped gallium nitride layer 52 provides between layer 20 in buffer layer 51 and electronics, further to alleviate substrate material and nitrogen
Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of undoped gallium nitride layer 52 can be 1 μm~5 μm, preferably 3 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 60, answers
The setting of power releasing layer 60 provides between layer 20 and active layer 30 in electronics, to generate to lattice mismatch between sapphire and gallium nitride
Stress discharged, improve the crystal quality of active layer, be conducive to electrons and holes active layer carry out radiation recombination shine,
The internal quantum efficiency of LED is improved, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 60 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire
The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 60 in stress release layer 60
The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 60 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 71, electricity
The setting of sub- barrier layer 71 provides between layer 40 in active layer 30 and hole, to avoid electron transition to hole provide in layer with hole
Non-radiative recombination is carried out, the luminous efficiency of LED is reduced.
Specifically, the material of electronic barrier layer 71 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 71 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 72, low temperature
P-type layer 72 is arranged between active layer 30 and electronic barrier layer 71, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 72 can be identical for the material that provides layer 40 with hole.In the present embodiment,
The material of low temperature P-type layer 72 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 72 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 72
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include p-type contact layer 80, p-type
The setting of contact layer 80 provides on layer 40 in hole, between the electrode or transparent conductive film that are formed in chip fabrication technique
Form Ohmic contact.
Specifically, the material of p-type contact layer 80 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 80 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 80
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate 10
On.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer 21
In 3 the second sublayers 22, the material of the first sublayer 21 uses the gallium nitride of doped silicon, and with a thickness of 3 μm, the doping of element silicon is dense
Degree is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 50nm, the doping concentration of carbon
It is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer 40
Material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3
Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 2%~
4%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer
Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate
On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer
25 the second sublayers 22 in 21, the material of the first sublayer 21 use the gallium nitride of doped silicon, and with a thickness of 3 μm, element silicon is mixed
Miscellaneous concentration is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 25nm, the doping of carbon
Concentration is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses nitrogen
Change indium gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
40 material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3
Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 4%~
6%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer
Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate
On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer
50 the second sublayers 22 in 21, the material of the first sublayer 21 use the gallium nitride of doped silicon, and with a thickness of 3 μm, element silicon is mixed
Miscellaneous concentration is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 10nm, the doping of carbon
Concentration is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses nitrogen
Change indium gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
40 material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3
Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 6%~
8%.
The embodiment of the invention provides a kind of preparation methods of gallium nitride based LED epitaxial slice, are suitable for preparation figure
LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
The flow chart of preparation method.Referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Specifically, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: sequentially forming electronics on substrate and layer, active layer and hole offer layer are provided.
In the present embodiment, electronics provides layer and includes the first sublayer and at least one of be inserted in the first sublayer second
Sublayer.The material of first sublayer uses the gallium nitride of doped silicon, and the material of the second sublayer uses the gallium nitride of doped carbon, the first son
The thickness of layer is greater than 1/2 that electronics provides the thickness of layer.
Optionally, the forming process of the second sublayer may include:
Grow undoped gallium nitride layer；
Using ion implantation technique in gallium nitride layer doped carbon, formed the second sublayer.
The injection of carbon is realized using ion implanting, forms the second sublayer.
Wherein, ion implanting is the ion for becoming electrically charged the atom of certain element through ionization, and ion adds in strong electrical field
Speed after obtaining higher kinetic energy, injects material surface, to change material surface physically or chemically.
In specific implementation, ion implant systems include ion source (English: Ion Source), magnetic analyzer (English:
Magnetic analyzer), accelerating tube (English: Accelerator), focus and scanning system (English: Focus and
Scan system) and target chamber (English: Target Assembly).
Wherein, the free electron that ion source issues filament obtains shock point after enough energy under electromagnetic field effect
Son or atom, make them be ionized into ion, then be sucked out through extraction electrode, are polymerized to ion beam, directive magnetic analyzer by prefocus system.
Magnetic analyzer, by ion isolation, is selected required using the difference of the ion of different nucleocytoplasmic ratios motion profile under magnetic field
Foreign ion.Selected ion beam is by variable gap, into accelerating tube.
Ion is accelerated to required energy by accelerating tube under electrostatic field.
It focuses and scanning system is after ion beam leaves accelerating tube, into control zone, first gather it by electrostatic focusing lens
Coke, then carry out the scanning of x and y both direction；Subsequently into deflection system, deflected ion beam is injected on target.
In simple terms, the ion drawn from ion source selects the ion of needs, the ion after analysis by magnetic analyzer
Accelerate to be injected into material surface with making even ion beam using bidimensional deflection scanner to improve the energy of ion.Use charge
Integrator can accurately measure the quantity of injection ion, and the energy for adjusting injection ion can accurately control the injection depth of ion
Degree.
Specifically, the dosage of ion implanting can be 1018/cm2~1020/cm2, the energy of ion implanting can be 50keV
~150keV.
Dosage by limiting ion implanting controls the implantation concentration of ion, and the energy by limiting ion implanting can essence
Really control the injection depth of ion.The energy coordination of the dosage and ion implanting that inject ions into, thus in the second sublayer
It is uniformly injected into the carbon of required concentration.
Preferably, which can also include:
Second sublayer is made annealing treatment.
With target atom a series of collisions can occur for energetic ion after injecting target, target atom may be made to be subjected to displacement, are displaced by
Atom is also possible to an energy and is successively given to other atoms, as a result generates a series of vacancy-interstitial atom pair and other types are brilliant
The unordered distribution of lattice generates lattice damage.By annealing, the damage as caused by ion implanting can be removed, makes crystal extensive
Its multiple original structure.
Specifically, the temperature of annealing can be 800 DEG C~950 DEG C, to reach preferable injury recovery effect.
Optionally, the growth temperature of the first sublayer can be 1000 DEG C~1200 DEG C, preferably 1100 DEG C；First sublayer
Growth pressure can be 100torr~500torr, preferably 300torr, to obtain the first less sublayer of crystal quality.
Specifically, which may include:
The first step grows electronics on substrate and provides layer；
Second step provides in electronics and grows active layer on layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~829 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 850 DEG C~
959 DEG C (preferably 900 DEG C), pressure is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), hole is grown on active layer, and layer is provided.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, electronics provides layer growth on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, electronics provides layer and is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before second step, which can also include:
Growth stress releasing layer on layer is provided in electronics.
Correspondingly, active layer is grown on stress release layer.
Specifically, growth stress releasing layer on layer is provided in electronics, may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), growth stress releasing layer on layer is provided in electronics.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, hole provides layer and is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
Growing P-type contact layer on layer is provided in hole.
Specifically, growing P-type contact layer on layer is provided in hole, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), growing P-type contact layer on layer is provided in hole.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
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| KR100738399B1 (en) * | 2006-04-18 | 2007-07-12 | 삼성전기주식회사 | Nitride Semiconductor Light Emitting Device |
| CN103748698A (en) * | 2011-08-08 | 2014-04-23 | 日进Led有限公司 | Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same |
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| CN1925180A (en) * | 2005-08-30 | 2007-03-07 | 日立电线株式会社 | Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device |
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