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CN109346513B - 可提高晶体质量和耐压性能的氮化物外延层及其制备方法 - Google Patents

可提高晶体质量和耐压性能的氮化物外延层及其制备方法 Download PDF

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CN109346513B
CN109346513B CN201811145381.7A CN201811145381A CN109346513B CN 109346513 B CN109346513 B CN 109346513B CN 201811145381 A CN201811145381 A CN 201811145381A CN 109346513 B CN109346513 B CN 109346513B
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程万希
梁辉南
姜仁波
李强
王荣华
高珺
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Runxin Microelectronics Dalian Co ltd
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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Abstract

本发明公开一种可提高晶体质量和耐压性能的氮化物外延层，有衬底、AlN缓冲层、AlxGa1‑xN缓冲层及GaN层，AlN缓冲层上表面有孔洞，所述孔洞内插接有MgxN纳米柱。制备方法依次按照如下步骤进行：在衬底上生长AlN缓冲层；控制反应室的压力为50~150mbar，以150~500 sccm的流量向反应室内通入金属镁元素5~30 s；依次生长AlxGa1‑xN缓冲层及GaN层。

Description

可提高晶体质量和耐压性能的氮化物外延层及其制备方法
技术领域
本发明涉及一种氮化物外延层及其制备方法，尤其是一种可提高晶体质量和耐压性能的氮化物外延层及其制备方法。
背景技术
作为继第一代半导体硅（Si）和第二代半导体砷化镓（GaAs）之后的第三代半导体材料代表—氮化镓（GaN）具有独特的材料特性，如宽禁带、耐高温、高电子浓度、高电子迁移率及高导热性等。因此，GaN基高电子迁移率晶体管（HEMT）在微波通讯和电力电子转换领域拥有卓越的性能。
制备GaN基高电子迁移率晶体管（HEMT）等需要制备外延层，即在衬底（硅或者蓝宝石）上依次生长AlN缓冲层、AlxGa1-xN缓冲层及GaN层（掺C的GaN层和本征GaN层）。由于硅衬底和AlN层之间的材料特性，当AlN层厚度超过400nm后，材料内部应力会使衬底产生划移线等，从而使材料的器件特性变差，故400nm是硅衬底上AlN层的极限厚度，通常厚度为300nm。即使是300nm厚度的AlN层长成后也会出现韧性位错，通过原子力显微镜发现其表面有很多V型孔洞（如图1所示），这些孔洞会导致后续的外延层晶体质量变差，同时所产生的孔洞也会成为漏电通道使外延层耐压性能降低。
发明内容
本发明是为了解决现有技术所存在的上述技术问题，提供一种可提高晶体质量和耐压性能的氮化物外延层及其制备方法。
本发明的技术解决方案是：一种可提高晶体质量和耐压性能的氮化物外延层，有衬底、AlN缓冲层、AlxGa1-xN缓冲层及GaN层，AlN缓冲层上表面有孔洞，所述孔洞内插接有MgxN纳米柱。
如上所述可提高晶体质量和耐压性能的氮化物外延层的制备方法，依次按照如下步骤进行：
a. 在衬底上生长AlN缓冲层；
b. 控制反应室的压力为50~150mbar，以150~500 sccm的流速向反应室内通入金属镁元素5~30 s；
c. 依次生长AlxGa1-xN缓冲层及GaN层。
本发明是在AlN缓冲层长成后，控制反应室压力并以一定的流量向反应室通入金属镁元素，金属镁元素则在AlN层表面迁移并进入AlN层中的V形孔洞中形成MgxN纳米柱，从而减少孔洞的密度，提高后续外延层的晶体质量；同时由于金属镁元素在GaN和AlN材料中是一种P型掺杂剂，使得所在界面层形成耗尽电场，从而进一步提高外延层的整体耐压性能。
附图说明
图1是现有技术AlN层表面原子力显微镜下图。
图2是本发明实施例的结构示意图。
具体实施方式
实施例1：
本发明的可提高晶体质量和耐压性能的氮化物外延层的制备方法，依次按照如下步骤进行：
a. 按照现有技术的方法，在衬底1上生长300nm厚的AlN缓冲层2；
b. 反应室其它条件不变，只是控制反应室的压力为50mbar，以150sccm的流量向反应室内通入金属二茂镁（Cp2Mg）10s；
c. 再按照现有技术的方法，依次生长AlxGa1-xN缓冲层3及GaN层。
所制备的外延层结构如图2所示：有衬底1、AlN缓冲层2、AlxGa1-xN缓冲层3及GaN层4，AlN缓冲层2上表面有孔洞5，孔洞5内插接有MgxN纳米柱6，总厚度为5.2μm。
实施例2：
本发明的可提高晶体质量和耐压性能的氮化物外延层的制备方法，依次按照如下步骤进行：
a. 按照现有技术的方法，在衬底1上生长300nm厚的AlN缓冲层2；
b. 反应室其它条件不变，只是控制反应室的压力为50mbar，以150sccm的流量向反应室内通入金属二茂镁（Cp2Mg）30s；
c. 再按照现有技术的方法，依次生长AlxGa1-xN缓冲层3及GaN层4。
所制备的外延层结构同实施例1，总厚度为5.2μm。
实施例3：
本发明的可提高晶体质量和耐压性能的氮化物外延层的制备方法，依次按照如下步骤进行：
a. 按照现有技术的方法，在衬底1上生长300nm厚的AlN缓冲层2；
b. 反应室其它条件不变，只是控制反应室的压力为150mbar，以500sccm的流量向反应室内通入金属二茂镁（Cp2Mg）30s；
c. 再按照现有技术的方法，依次生长AlxGa1-xN缓冲层3及GaN层4。
所制备的外延层结构同实施例1，总厚度为5.2μm。
对比例：按照现有技术的方法制备外延层，具有有衬底、300nm厚AlN缓冲层、AlxGa1-xN缓冲层及GaN层，总厚度为5.2μm。
将本发明实施例1、2、3与对比例同时进行XRD 002/102及垂直耐击穿电压试验，结果如下表：
试验项目 对比例 实施例1 实施例2 实施例3
XRD 002/102 （arcsec） 500/1200 400/900 450/1080 470/1120
击穿电压（V） 700 840 790 750
结果表明：本发明实施例1、2、3的晶体质量和耐压性能相对现有技术均有所提高。

Claims (2)

1.一种可提高晶体质量和耐压性能的氮化物外延层的制备方法，依次按照如下步骤进行：
a. 在衬底（1）上生长300nm厚的AlN缓冲层（2），所述AlN缓冲层（2）中形成有V形孔洞；
b. 控制反应室的压力为50~150mbar，以150~500 sccm的流量向反应室内通入金属镁元素5~30s，所述金属镁元素为金属二茂镁；所述金属镁元素在所述AlN缓冲层（2）表面迁移并进入所述AlN缓冲层（2）的V形孔洞中形成MgxN纳米柱，从而减少所述V形孔洞的密度，提高后续外延层的晶体质量；同时所述金属镁元素在GaN和AlN材料中是一种P型掺杂剂，使得所在界面层形成耗尽电场，从而进一步提高外延层的整体耐压性能；
c. 依次生长AlxGa1-xN缓冲层（3）及GaN层（4）；所述衬底（1）、AlN缓冲层（2）、AlxGa1-xN缓冲层（3）及GaN层（4）总厚度为5.2μm。
2.一种如权利要求1所述可提高晶体质量和耐压性能的氮化物外延层的制备方法制备的外延层，有衬底（1）、AlN缓冲层（2）、AlxGa1-xN缓冲层（3）及GaN层（4），AlN缓冲层（2）上表面有孔洞（5），其特征在于：所述孔洞（5）内插接有MgxN纳米柱（6）。
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