CN109319788B - Method for preparing polycrystalline silicon by refining and directional solidification of silicon-aluminum-calcium alloy - Google Patents
Method for preparing polycrystalline silicon by refining and directional solidification of silicon-aluminum-calcium alloy Download PDFInfo
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Abstract
本发明属于多晶硅提纯领域,公开了一种采用硅铝钙合金精炼及定向凝固制备多晶硅的方法,包括:1)将待提纯硅粉放入20~35℃的氢氟酸和过氧化氢的混合液中浸泡1~2h,过滤、水洗、过滤、烘干;2)将步骤1)得到的粗提硅粉与金属铝和金属钙放入感应熔炼炉中,往炉体中通入惰性气体并使炉内温度升至1703~1783℃后保温1~10h,冷却至室温,得到硅铝钙合金;3)将步骤2)得到的硅铝钙合金研磨成粉之后依次采用混合酸Ⅰ和混合酸Ⅱ进行酸洗;4)将酸洗产物进行定向凝固,退火,得到二次精炼后的硅铝钙合金铸锭;5)将二次精炼后的硅铝钙合金铸锭切去头部的20~40%。本发明对于多晶硅中的杂质,特别是磷杂质,具有很好的去除效果,从而得到高纯度多晶硅。
The invention belongs to the field of polycrystalline silicon purification, and discloses a method for preparing polycrystalline silicon by refining and directional solidification of silicon-aluminum-calcium alloy. Soak in the liquid for 1 to 2 hours, filter, wash, filter, and dry; 2) put the crude silicon powder obtained in step 1) together with metal aluminum and metal calcium into an induction melting furnace, and pass an inert gas into the furnace body and The temperature in the furnace is raised to 1703-1783° C., the temperature is kept for 1-10 hours, and then cooled to room temperature to obtain a silicon-aluminum-calcium alloy; 3) the silicon-aluminum-calcium alloy obtained in step 2) is ground into powder, and mixed acid I and mixed acid are used in sequence II. Pickling; 4) directional solidification of the pickling product, annealing, to obtain a silicon-aluminum-calcium alloy ingot after secondary refining; 5) cutting off 20 of the head of the silicon-aluminum-calcium alloy ingot after secondary refining; ~40%. The present invention has good removal effect for impurities in polysilicon, especially phosphorus impurities, thereby obtaining high-purity polysilicon.
Description
技术领域technical field
本发明涉及一种多晶硅的提纯方法,尤其涉及一种采用硅铝钙合金精炼及定向凝固制备多晶硅的方法。The invention relates to a method for purifying polycrystalline silicon, in particular to a method for preparing polycrystalline silicon by refining and directional solidification of a silicon-aluminum-calcium alloy.
背景技术Background technique
随着社会发展,不可再生能源被不断消耗,同时还使环境污染日益严重。太阳能作为新型的可再生能源,因为有着取之不尽用之不竭的优点而受到人们的广泛关注。With the development of society, non-renewable energy is continuously consumed, and at the same time, environmental pollution is becoming more and more serious. As a new type of renewable energy, solar energy has attracted widespread attention because of its inexhaustible advantages.
太阳能电池的原料主要是多晶硅材料,而多晶硅材料又以转换效率高、价格低廉等优势逐渐占据了太阳能电池市场。多晶硅的制备工艺主要包括化学法和冶金法。其中,化学法是将工业硅转换成中间化合物,再通过精馏等工艺提纯,最后得到高纯硅。冶金法主要是通过一系物理工艺去除硅中杂质,而硅本身不参与反应。虽然化学法制得的硅纯度高且质量好,但化学法工艺复杂、成本较高。相比而言,冶金法因成本低、环境友好等优点而越来越受到人们的重视。The raw materials of solar cells are mainly polycrystalline silicon materials, and polycrystalline silicon materials have gradually occupied the solar cell market with the advantages of high conversion efficiency and low price. The preparation process of polysilicon mainly includes chemical method and metallurgical method. Among them, the chemical method is to convert industrial silicon into intermediate compounds, and then purify through rectification and other processes, and finally obtain high-purity silicon. Metallurgy mainly removes impurities in silicon through a series of physical processes, and silicon itself does not participate in the reaction. Although the silicon produced by chemical method has high purity and good quality, the chemical method is complicated and expensive. In contrast, metallurgical methods have attracted more and more attention due to their low cost and environmental friendliness.
冶金法的工艺主要有定向凝固、真空精炼、吹气造渣、湿法冶炼、等离子体精炼等。然而,对于硅中存在的多种杂质,单一的工艺只能去除一种杂质或几种杂质,无法达到太阳能级硅的质量要求。若要有效地去除杂质,则需要根据杂质物理化学性质的不同,结合多种不同工艺去除。CN100372762C公开了一种制备太阳能级多晶硅的方法,采用酸洗方法提纯多晶硅,但仅仅通过酸洗工艺无法达到太阳能级硅的标准,且酸洗过程中硅表面会生成氧化膜阻止反应的进行。The metallurgical processes mainly include directional solidification, vacuum refining, blowing slag, hydrometallurgy, plasma refining, etc. However, for multiple impurities in silicon, a single process can only remove one or several impurities, which cannot meet the quality requirements of solar-grade silicon. To effectively remove impurities, it is necessary to combine a variety of different processes to remove impurities according to the different physical and chemical properties of impurities. CN100372762C discloses a method for preparing solar-grade polysilicon, which adopts pickling method to purify polysilicon, but the standard of solar-grade silicon cannot be reached only by the pickling process, and an oxide film will be formed on the silicon surface during the pickling process to prevent the reaction from proceeding.
发明内容SUMMARY OF THE INVENTION
本发明旨在提供一种新的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法。The present invention aims to provide a new method for preparing polycrystalline silicon by refining and directional solidification of silicon-aluminum-calcium alloy.
具体地,本发明提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法包括:Specifically, the method for preparing polysilicon by refining and directional solidification of a silicon-aluminum-calcium alloy provided by the present invention includes:
1)将待提纯硅粉放入20~35℃的氢氟酸和过氧化氢的混合液中浸泡1~2h,过滤、水洗、过滤、烘干,得到粗提硅粉;1) Put the silicon powder to be purified into the mixed solution of hydrofluoric acid and hydrogen peroxide at 20~35℃, soak for 1~2h, filter, wash with water, filter and dry to obtain the crude silicon powder;
2)将步骤1)得到的粗提硅粉与金属铝和金属钙放入感应熔炼炉中,往炉体中通入惰性气体并使炉内温度升至1703~1783℃后保温1~10h,冷却至室温,得到一次精炼的硅铝钙合金;2) Put the crudely extracted silicon powder obtained in step 1) together with metal aluminum and metal calcium into an induction melting furnace, pass an inert gas into the furnace body and make the temperature in the furnace rise to 1703-1783 ℃ and then keep the temperature for 1-10h, Cool to room temperature to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的硅铝钙合金研磨成粉之后依次采用盐酸和乙酸的混合酸Ⅰ以及盐酸和氢氟酸的混合酸Ⅱ进行酸洗;3) after the silicon-alumina-calcium alloy obtained in step 2) is ground into powder, the mixed acid I of hydrochloric acid and acetic acid and the mixed acid II of hydrochloric acid and hydrofluoric acid are successively used for pickling;
4)将步骤3)得到的酸洗产物进行定向凝固,之后再进行退火处理,得到二次精炼后的硅铝钙合金铸锭;4) directional solidification of the pickling product obtained in step 3), followed by annealing treatment to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的二次精炼后的硅铝钙合金铸锭切去头部的20~40%,得到的剩余部分即为多晶硅。5) Cut off 20-40% of the head of the silicon-aluminum-calcium alloy ingot after secondary refining obtained in step 4), and the remaining part obtained is polysilicon.
所述惰性气体可以为现有的各种不与待提纯硅粉反应的气体,例如,可以为氮气、零族元素气体等。其中,所述零族元素气体例如可以为氦气、氩气等。The inert gas can be various existing gases that do not react with the silicon powder to be purified, for example, nitrogen gas, zero-group element gas, and the like. Wherein, the zero-group element gas may be, for example, helium, argon, or the like.
在本发明中,术语“头部”是指先凝固的顶端。In the present invention, the term "head" refers to the first solidified tip.
优选地,步骤1)中,所述混合液中氢氟酸的浓度为1~3mol/L,过氧化氢的浓度为1.5~2.5mol/L。Preferably, in step 1), the concentration of hydrofluoric acid in the mixed solution is 1-3 mol/L, and the concentration of hydrogen peroxide is 1.5-2.5 mol/L.
优选地,所述金属铝和金属钙分别以铝块和钙块的形式使用。Preferably, the metal aluminum and metal calcium are used in the form of aluminum blocks and calcium blocks, respectively.
优选地,所述铝块和钙块的加入量的原子百分比为(1.5-2.5):1。Preferably, the atomic percentage of the added amount of the aluminum block and the calcium block is (1.5-2.5):1.
优选地,相对于100重量份的待提纯硅粉,所述铝块和钙块的总用量为80~120重量份。Preferably, relative to 100 parts by weight of the silicon powder to be purified, the total amount of the aluminum block and the calcium block is 80-120 parts by weight.
优选地,所述铝块和钙块的纯度各自独立地为2~3N。Preferably, the purities of the aluminum block and the calcium block are each independently 2-3N.
优选地,所述待提纯硅粉的纯度为1~3N。此外,所述待提纯硅粉可以为工业硅粉。Preferably, the purity of the silicon powder to be purified is 1-3N. In addition, the silicon powder to be purified can be industrial silicon powder.
优选地,步骤2)中,所述保温的温度为1720~1780℃,时间为5~6h。Preferably, in step 2), the temperature of the heat preservation is 1720-1780° C., and the time is 5-6 h.
优选地,步骤2)中,所述冷却的速度为5~10℃/min。Preferably, in step 2), the cooling rate is 5-10°C/min.
优选地,所述混合酸Ⅰ中盐酸的浓度为1~3mol/L,乙酸的浓度为1~4mol/L。Preferably, the concentration of hydrochloric acid in the mixed acid I is 1-3 mol/L, and the concentration of acetic acid is 1-4 mol/L.
优选地,所述混合酸Ⅱ中盐酸的浓度为1~3mol/L,氢氟酸的浓度为1~6mol/L。Preferably, the concentration of hydrochloric acid in the mixed acid II is 1-3 mol/L, and the concentration of hydrofluoric acid is 1-6 mol/L.
优选地,采用所述混合酸Ⅰ和混合酸Ⅱ进行酸洗的条件各自独立地包括温度为20~60℃,时间为2~3h,且各自独立地在300~600rad/min的磁性搅拌下进行。Preferably, the conditions for using the mixed acid I and the mixed acid II for pickling independently include a temperature of 20-60° C., a time of 2-3 hours, and a magnetic stirring of 300-600 rad/min each independently. .
优选地,本发明提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法还包括步骤3)中,将两次酸洗后的产物依次进行过滤、水洗、烘干的步骤;和/或,步骤5)中,将从硅铝钙合金铸锭头部切去的20~40%多晶硅回收再利用。Preferably, the method for preparing polycrystalline silicon by refining and directional solidification of a silicon-aluminum-calcium alloy provided by the present invention further comprises the steps of filtration, washing and drying of the product after two picklings in step 3) in sequence; and/or, In step 5), 20-40% polysilicon cut from the head of the silicon-aluminum-calcium alloy ingot is recovered and reused.
优选地,所述定向凝固的方向为竖直方向,采用的方法是固定热源,坩埚从上往下运动,随后进行退火。Preferably, the direction of the directional solidification is a vertical direction, and the method used is to fix the heat source, move the crucible from top to bottom, and then perform annealing.
优选地,设定定向凝固竖直方向上温度梯度为10~30℃/cm,所述坩埚从上往下运动的速度为15~25mm/h;所述退火的处理时间为7~8h。Preferably, the temperature gradient in the vertical direction of directional solidification is set to be 10-30°C/cm, the speed of the crucible moving from top to bottom is 15-25mm/h, and the annealing treatment time is 7-8h.
根据一种具体实施方式,如图1所示,本发明提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法包括:According to a specific embodiment, as shown in FIG. 1 , the method for preparing polysilicon by refining and directional solidification of a silicon-aluminum-calcium alloy provided by the present invention includes:
1)将待提纯硅粉放入20~35℃的氢氟酸和过氧化氢的混合液中浸泡1~2h,过滤,用去离子水冲洗至中性,过滤,烘干,得到粗提硅粉;1) Soak the silicon powder to be purified in a mixture of hydrofluoric acid and hydrogen peroxide at 20-35°C for 1-2 hours, filter, rinse with deionized water until neutral, filter, and dry to obtain crude silicon pink;
2)将步骤1)得到的粗提硅粉与铝块和钙块放入感应熔炼炉中,往炉体中通入氩气并使炉内温度升至1703~1783℃后保温1~10h,冷却至室温,得到一次精炼的硅铝钙合金;2) Put the crudely extracted silicon powder, aluminum block and calcium block obtained in step 1) into an induction melting furnace, pass argon gas into the furnace body and make the temperature in the furnace rise to 1703-1783 ℃ and then keep for 1-10h, Cool to room temperature to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的硅铝钙合金研磨成粉之后采用两步法酸洗:第一步将硅铝钙合金粉末采用盐酸和乙酸的混合酸Ⅰ进行酸洗处理,酸洗温度为20~60℃,酸洗时间为2~3h,酸洗处理后过滤,去离子水洗净,烘干;第二步再将烘干后的粉末采用盐酸和氢氟酸的混合酸Ⅱ进行酸洗处理,酸洗温度为20~60℃,酸洗时间为2~3h,酸洗处理后过滤,去离子水清洗,烘干;3) After grinding the silicon-aluminum-calcium alloy obtained in step 2) into powder, adopt a two-step pickling method: in the first step, the silicon-alumina-calcium alloy powder is subjected to pickling treatment with a mixed acid I of hydrochloric acid and acetic acid, and the pickling temperature is 20 ℃. ~60℃, pickling time is 2~3h, after pickling treatment, filter, wash with deionized water, and dry; in the second step, the dried powder is pickled with mixed acid II of hydrochloric acid and hydrofluoric acid Treatment, pickling temperature is 20~60℃, pickling time is 2~3h, after pickling treatment, filter, wash with deionized water, and dry;
4)将步骤3)得到的二次酸洗粉末再进行定向凝固,设置定向凝固的方向为竖直方向且竖直方向上的温度梯度为10~30℃/cm,采用的方法是固定热源,坩埚从上往下运动,随后进行退火处理得到二次精炼后的硅铝钙合金铸锭;4) The secondary pickling powder obtained in step 3) is subjected to directional solidification, the direction of directional solidification is set as the vertical direction and the temperature gradient in the vertical direction is 10-30 °C/cm, and the adopted method is to fix the heat source, The crucible is moved from top to bottom, and then annealed to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的二次精炼后的硅铝钙合金铸锭切去头部的20~40%,得到的剩余部分即为多晶硅;将从硅铝钙合金铸锭头部切去的20~40%多晶硅回收再利用。5) Cut off 20-40% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) after the secondary refining, and the remaining part obtained is polysilicon; 20-40% polysilicon is recycled and reused.
本发明采用硅铝钙合金精炼及定向凝固的方法提纯多晶硅,在合金精炼前对待提纯硅粉进行酸洗处理,可以将一些表面杂质去除,之后在合金精炼过程中形成了CaAl2Si2合金相,该CaAl2Si2合金相对杂质特别是磷杂质有较高亲和力,此外,合金精炼之后采用特定的二次酸洗配以定向凝固,能够进一步提高硅的纯度,定向凝固之后的退火处理可以有效地去除硅在凝固过程中产生的缺陷和气孔。综上,本发明通过溶剂精炼、湿法冶金、定向凝固等多种工艺的配合使用,对于多晶硅中的杂质,特别是磷杂质,具有很好的去除效果,从而得到高纯度多晶硅。此外,本发明提供的制备多晶硅的方法中设备能耗低、成本低、环境污染小,因此具有广阔的应用前景。The invention adopts the method of silicon-aluminum-calcium alloy refining and directional solidification to purify polycrystalline silicon. Before alloy refining, the silicon powder to be purified is subjected to pickling treatment, so that some surface impurities can be removed, and then a CaAl 2 Si 2 alloy phase is formed during the alloy refining process. , the CaAl 2 Si 2 alloy has a high affinity for impurities, especially phosphorus impurities. In addition, after the alloy is refined, a specific secondary pickling is used for directional solidification, which can further improve the purity of silicon. The annealing treatment after directional solidification can effectively Defects and pores generated during the solidification process of silicon are removed. In summary, the present invention has a good removal effect on impurities in polysilicon, especially phosphorus impurities, through the use of solvent refining, hydrometallurgy, directional solidification and other processes, thereby obtaining high-purity polysilicon. In addition, the method for preparing polysilicon provided by the present invention has low equipment energy consumption, low cost and little environmental pollution, so it has broad application prospects.
附图说明Description of drawings
通过结合附图对本发明示例性实施方式进行更详细的描述,本发明的上述以及其它目的、特征和优势将变得更加明显。The above and other objects, features and advantages of the present invention will become more apparent from the more detailed description of the exemplary embodiments of the present invention in conjunction with the accompanying drawings.
图1是本发明提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图。FIG. 1 is a flow chart of a method for preparing polycrystalline silicon by refining and directional solidification of a silicon-aluminum-calcium alloy provided by the present invention.
具体实施方式Detailed ways
下面详细描述本发明的实施例,所述实施例的示例旨在用于解释本发明,而不能理解为对本发明的限制。实施例中未注明具体技术或条件者,按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。所用试剂或仪器未注明生产厂商者,均为可以通过市购获得的常规产品。The embodiments of the present invention will be described in detail below, and the examples of the embodiments are intended to be used to explain the present invention, but should not be construed as a limitation of the present invention. If no specific technology or condition is indicated in the examples, the technology or condition described in the literature in the field or the product specification is used. The reagents or instruments used without the manufacturer's indication are conventional products that can be obtained from the market.
实施例1Example 1
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入25℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡1h,其中,氢氟酸浓度为1mol/L,过氧化氢浓度为1.5mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 25°C for 1 hour. , wherein the concentration of hydrofluoric acid is 1 mol/L, and the concentration of hydrogen peroxide is 1.5 mol/L, then rinsed with deionized water until neutral, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1723℃后保温5h,随后以5℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1723 °C, and then kept for 5 h, and then cooled to room temperature at a speed of 5 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用1.5mol/L的盐酸和1.5mol/L的乙酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用1.5mol/L的盐酸和1.5mol/L的氢氟酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First pickle with a mixed acid consisting of 1.5mol/L hydrochloric acid and 1.5mol/L acetic acid, pickle at 30°C for 2h, and the pickling treatment is carried out under magnetic stirring at 350rad/min, and then the acid The washed powder is filtered, washed with deionized water, and dried to obtain primary silicon powder; then the primary silicon powder is acid washed with a mixed acid composed of 1.5 mol/L hydrochloric acid and 1.5 mol/L hydrofluoric acid, at 30 ° C. Pickling was carried out for 2 hours, and the pickling treatment was carried out under magnetic stirring at 350 rad/min, followed by filtration, washing with deionized water, and drying to obtain secondary silica fume;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为20℃/cm,启动定向凝固升降装置使得坩埚以15mm/h的速度从上往下运动,之后退火7h,得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 20° C./cm, and start the directional solidification lifting device so that the crucible reaches 15 mm. The speed of /h moves from top to bottom, and then annealed for 7 hours to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的20%,剩余部分即为多晶硅(高纯硅),经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99934%,其中磷含量为0.24ppmw。切除的20%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 20% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon (high-purity silicon). The purity of the polysilicon is 99.99934% as measured by glow discharge mass spectrometer (GDMS). , in which the phosphorus content is 0.24ppmw. The cut-off 20% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
实施例2Example 2
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入23℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡2h,其中,氢氟酸浓度为1.3mol/L,过氧化氢浓度为1.8mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 23°C for 2 hours. , wherein the concentration of hydrofluoric acid is 1.3 mol/L, and the concentration of hydrogen peroxide is 1.8 mol/L, then rinsed with deionized water until neutral, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1757℃后保温5.4h,随后以7℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1757 °C, and then kept for 5.4 hours, and then cooled to room temperature at a speed of 7 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用2mol/L的盐酸和3mol/L的乙酸组成的混合酸酸洗,在40℃下酸洗2.5h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用1.5mol/L的盐酸和4mol/L的氢氟酸组成的混合酸酸洗,在40℃下酸洗2.5h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First pickle with a mixed acid consisting of 2mol/L hydrochloric acid and 3mol/L acetic acid, pickle at 40°C for 2.5h, and the pickling treatment is carried out under magnetic stirring at 350rad/min, and then pickle The powder was filtered, washed with deionized water, and dried to obtain primary silicon powder; then the primary silicon powder was pickled with a mixed acid composed of 1.5 mol/L hydrochloric acid and 4 mol/L hydrofluoric acid, and pickled at 40 °C 2.5h, and the pickling treatment was carried out under magnetic stirring at 350 rad/min, and then filtered, washed with deionized water, and dried to obtain secondary silica fume;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为10℃/cm,启动定向凝固升降装置使得坩埚以20mm/h的速度从上往下运动,之后退火7.5h得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 10°C/cm, and start the directional solidification lifting device so that the crucible is 20 mm The speed of /h moves from top to bottom, and then annealed for 7.5h to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的20%,剩余部分即为多晶硅,经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99924%,其中磷含量为0.34ppmw。切除的20%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 20% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon. The polysilicon has a purity of 99.99924% as measured by a glow discharge mass spectrometer (GDMS), and the phosphorus content is 99.99924%. 0.34ppmw. The cut-off 20% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
实施例3Example 3
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入25℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡1h,其中,氢氟酸浓度为1mol/L,过氧化氢浓度为1.5mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 25°C for 1 hour. , wherein the concentration of hydrofluoric acid is 1 mol/L, and the concentration of hydrogen peroxide is 1.5 mol/L, then rinsed with deionized water until neutral, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1758℃后保温5h,随后以5℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1758 °C, and then kept for 5 hours, and then cooled to room temperature at a speed of 5 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用3mol/L的盐酸和2mol/L的乙酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用3mol/L的盐酸和4mol/L的氢氟酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First, use a mixed acid consisting of 3 mol/L hydrochloric acid and 2 mol/L acetic acid for pickling, pickling at 30 °C for 2 h, and the pickling treatment is carried out under magnetic stirring at 350 rad/min, and then the pickled The powder was filtered, washed with deionized water, and dried to obtain primary silicon powder; then, the primary silicon powder was pickled with a mixed acid consisting of 3 mol/L hydrochloric acid and 4 mol/L hydrofluoric acid, and pickled at 30°C for 2 hours, And the pickling treatment is carried out under magnetic stirring at 350 rad/min, and then the secondary silicon powder is obtained after filtering, washing with deionized water, and drying;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为30℃/cm,启动定向凝固升降装置使得坩埚以24mm/h的速度从上往下运动,之后退火7.4h,得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 30°C/cm, and start the directional solidification lifting device so that the crucible is 24 mm The speed of /h moves from top to bottom, and then annealed for 7.4 hours to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的30%,剩余部分即为多晶硅,经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99968%,其中磷含量为0.57ppmw。切除的30%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 30% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon. The polysilicon has a purity of 99.99968% as measured by a glow discharge mass spectrometer (GDMS), and the phosphorus content is 99.99968%. 0.57ppmw. The cut-off 30% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
实施例4Example 4
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入25℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡1h,其中,氢氟酸浓度为1mol/L,过氧化氢浓度为1.5mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 25°C for 1 hour. , wherein the concentration of hydrofluoric acid is 1 mol/L, and the concentration of hydrogen peroxide is 1.5 mol/L, then rinsed with deionized water until neutral, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1778℃后保温5h,随后以5℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1778 °C, and then kept for 5 h, and then cooled to room temperature at a speed of 5 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用1.5mol/L的盐酸和1.5mol/L的乙酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用2mol/L的盐酸和6mol/L的氢氟酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First pickle with a mixed acid consisting of 1.5mol/L hydrochloric acid and 1.5mol/L acetic acid, pickle at 30°C for 2h, and the pickling treatment is carried out under magnetic stirring at 350rad/min, and then the acid The washed powder is filtered, washed with deionized water, and dried to obtain primary silicon powder; then the primary silicon powder is pickled with a mixed acid consisting of 2 mol/L hydrochloric acid and 6 mol/L hydrofluoric acid, and pickled at 30°C 2h, and the pickling treatment was carried out under magnetic stirring at 350 rad/min, and then the secondary silicon powder was obtained after filtering, washing with deionized water, and drying;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为20℃/cm,启动定向凝固升降装置使得坩埚以15mm/h的速度从上往下运动,之后退火7h,得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 20° C./cm, and start the directional solidification lifting device so that the crucible reaches 15 mm. The speed of /h moves from top to bottom, and then annealed for 7 hours to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的20%,剩余部分即为多晶硅,经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99955%,其中磷含量为0.45ppmw。切除的20%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 20% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon. The polysilicon has a purity of 99.99955% as measured by a glow discharge mass spectrometer (GDMS), and the phosphorus content is 99.99955%. 0.45ppmw. The cut-off 20% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
实施例5Example 5
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入25℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡1h,其中,氢氟酸浓度为1mol/L,过氧化氢浓度为1.5mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 25°C for 1 hour. , wherein the concentration of hydrofluoric acid is 1 mol/L, and the concentration of hydrogen peroxide is 1.5 mol/L, then rinsed with deionized water until neutral, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1723℃后保温5h,随后以5℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1723 °C, and then kept for 5 h, and then cooled to room temperature at a speed of 5 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用3mol/L的盐酸和4mol/L的乙酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用2mol/L的盐酸和5mol/L的氢氟酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First, use a mixed acid consisting of 3 mol/L hydrochloric acid and 4 mol/L acetic acid for pickling, pickling at 30 °C for 2 h, and the pickling treatment is carried out under magnetic stirring at 350 rad/min, and then the pickled The powder was filtered, washed with deionized water, and dried to obtain primary silicon powder; then, the primary silicon powder was pickled with a mixed acid consisting of 2 mol/L hydrochloric acid and 5 mol/L hydrofluoric acid, and pickled at 30°C for 2 hours. And the pickling treatment is carried out under magnetic stirring at 350 rad/min, and then the secondary silicon powder is obtained after filtering, washing with deionized water, and drying;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为20℃/cm,启动定向凝固升降装置使得坩埚以15mm/h的速度从上往下运动,之后退火7h,得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 20° C./cm, and start the directional solidification lifting device so that the crucible reaches 15 mm. The speed of /h moves from top to bottom, and then annealed for 7 hours to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的20%,剩余部分即为多晶硅,经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99924%,其中磷含量为0.14ppmw。切除的20%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 20% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon. The polysilicon has a purity of 99.99924% as measured by a glow discharge mass spectrometer (GDMS), and the phosphorus content is 99.99924%. 0.14ppmw. The cut-off 20% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
实施例6Example 6
该实施例提供的采用硅铝钙合金精炼及定向凝固制备多晶硅的方法的流程图如图1所示,具体地:The flow chart of the method for preparing polysilicon by refining and directional solidification of silicon-aluminum-calcium alloy provided by this embodiment is shown in Figure 1, specifically:
1)将15g纯度为2N、粒径为75μm的工业硅粉(磷含量约为30ppmw)放入35℃的氢氟酸(HF)和过氧化氢(H2O2)的混合液中浸泡2h,其中氢氟酸浓度为2mol/L,过氧化氢浓度为2mol/L,然后用去离子水冲洗至中性,过滤烘干,得到粗提硅粉;1) Put 15g of industrial silicon powder with a purity of 2N and a particle size of 75μm (phosphorus content is about 30ppmw) into a mixture of hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) at 35°C for 2 hours. , wherein the concentration of hydrofluoric acid is 2mol/L, and the concentration of hydrogen peroxide is 2mol/L, then rinsed with deionized water to neutrality, filtered and dried to obtain coarsely extracted silicon powder;
2)将步骤1)得到的粗提硅粉与13g铝块(Al)和10g钙块(Ca)混合放入感应熔炼炉中,所采用的铝块和钙块纯度均为2N;往炉体中通入氩气,打开感应加热电源,使炉体内温度升至1723℃后保温5h,随后以5℃/min的速度冷却至室温,得到一次精炼的硅铝钙合金;2) The coarsely extracted silicon powder obtained in step 1) is mixed with 13g aluminum block (Al) and 10g calcium block (Ca) and put into the induction melting furnace, and the aluminum block and calcium block purity adopted are both 2N; Argon gas was introduced into the furnace, the induction heating power was turned on, the temperature in the furnace body was raised to 1723 °C, and then kept for 5 h, and then cooled to room temperature at a speed of 5 °C/min to obtain a refined silicon-aluminum-calcium alloy;
3)将步骤2)得到的一次精炼的硅铝钙合金研磨成粉,之后进行两步法酸洗。首先用1.5mol/L的盐酸和1.5mol/L的乙酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,然后将酸洗的粉末经过过滤、去离子水洗净、干燥得到一次硅粉;接着将一次硅粉用1.5mol/L的盐酸和4mol/L的氢氟酸组成的混合酸酸洗,在30℃下酸洗2h,且所述酸洗处理是在350rad/min的磁性搅拌下进行,之后经过过滤、去离子水洗净、干燥后得到二次硅粉;3) Grind the once-refined silicon-aluminum-calcium alloy obtained in step 2) into powder, and then carry out two-step pickling. First pickle with a mixed acid consisting of 1.5mol/L hydrochloric acid and 1.5mol/L acetic acid, pickle at 30°C for 2h, and the pickling treatment is carried out under magnetic stirring at 350rad/min, and then the acid The washed powder is filtered, washed with deionized water, and dried to obtain primary silicon powder; then the primary silicon powder is acid-washed with a mixed acid composed of 1.5 mol/L hydrochloric acid and 4 mol/L hydrofluoric acid, and acidified at 30°C. Washing for 2 hours, and the pickling treatment is carried out under magnetic stirring at 350 rad/min, and then filtered, washed with deionized water, and dried to obtain secondary silica fume;
4)将步骤3)得到的二次硅粉用于定向凝固以去除B、P、Ti等杂质,设置定向凝固竖直方向上温度梯度为20℃/cm,启动定向凝固升降装置使得坩埚以15mm/h的速度从上往下运动,之后退火7h,得到二次精炼后的硅铝钙合金铸锭;4) Use the secondary silicon powder obtained in step 3) for directional solidification to remove impurities such as B, P, and Ti, set the temperature gradient in the vertical direction of directional solidification to 20° C./cm, and start the directional solidification lifting device so that the crucible reaches 15 mm. The speed of /h moves from top to bottom, and then annealed for 7 hours to obtain a silicon-aluminum-calcium alloy ingot after secondary refining;
5)将步骤4)得到的硅铝钙合金铸锭去除头部的20%,剩余部分即为多晶硅,经过辉光放电质谱仪(GDMS)测定,该多晶硅的纯度为99.99937%,其中磷含量为0.29ppmw。切除的20%多晶硅可以回收利用,但是加入量不能超过硅原料的30%。5) 20% of the head of the silicon-aluminum-calcium alloy ingot obtained in step 4) is removed, and the remaining part is polysilicon. The polysilicon has a purity of 99.99937% as measured by a glow discharge mass spectrometer (GDMS), and the phosphorus content is 99.99937%. 0.29ppmw. The cut-off 20% polysilicon can be recycled, but the added amount cannot exceed 30% of the silicon raw material.
以上详细描述了本发明的优选实施方式,但是,本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种简单变型,这些简单变型均属于本发明的保护范围。The preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the specific details of the above-mentioned embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solutions of the present invention. These simple modifications All belong to the protection scope of the present invention.
另外需要说明的是,在上述具体实施方式中所描述的各个具体技术特征,在不矛盾的情况下,可以通过任何合适的方式进行组合。为了避免不必要的重复,本发明对各种可能的组合方式不再另行说明。In addition, it should be noted that each specific technical feature described in the above-mentioned specific implementation manner may be combined in any suitable manner under the circumstance that there is no contradiction. In order to avoid unnecessary repetition, the present invention will not describe various possible combinations.
此外,本发明的各种不同的实施方式之间也可以进行任意组合,只要其不违背本发明的思想,其同样应当视为本发明所公开的内容。In addition, the various embodiments of the present invention can also be combined arbitrarily, as long as they do not violate the spirit of the present invention, they should also be regarded as the contents disclosed in the present invention.
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Enhanced separation of phosphorus from metallurgical grade silicon by CaAl2Si2 phase reconstruction;Lai, HX等;《SEPARATION AND PURIFICATION TECHNOLOGY》;20180131;第191卷;第257-265页 * |
铝硅合金精炼提纯多晶硅的研究进展;李亚琼等;《材料导报》;20120531;第26卷(第5期);第6-10,20页 * |
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