CN109300928A - Image sensor chip and image sensor device - Google Patents
Image sensor chip and image sensor device Download PDFInfo
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- CN109300928A CN109300928A CN201811191864.0A CN201811191864A CN109300928A CN 109300928 A CN109300928 A CN 109300928A CN 201811191864 A CN201811191864 A CN 201811191864A CN 109300928 A CN109300928 A CN 109300928A
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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- H10F39/80—Constructional details of image sensors
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Abstract
本申请提供了一种图像传感器芯片和图像传感器装置。该图像传感器芯片包括多个光敏单元，多个光敏单元沿第一方向依次排列，且各光敏单元包括多个沿着第二方向依次排列的光敏器件，第一方向与第二方向垂直，第二方向为图像传感器芯片的主扫描方向，各光敏器件具有光敏接收区，任意两个光敏接收区的面积均相同且具有宽度相同的间隔，任意两个光敏单元中的任意两个光敏器件的光敏接收区的中心的连线与第一方向之间具有夹角θ，且0°<θ<180°。该图像传感器使得第二方向上检测点增加，从而提高了图像传感器芯片的分辨率，且该图像传感器芯片中的各光敏器件的光敏接收区的面积没有减小，进一步保证了感度的不下降。
The present application provides an image sensor chip and an image sensor device. The image sensor chip includes a plurality of photosensitive units, the plurality of photosensitive units are arranged in sequence along a first direction, and each photosensitive unit includes a plurality of photosensitive devices arranged in sequence along a second direction, the first direction is perpendicular to the second direction, and the second direction is perpendicular to the second direction. The direction is the main scanning direction of the image sensor chip. Each photosensitive device has a photosensitive receiving area. Any two photosensitive receiving areas have the same area and have an interval with the same width. The photosensitive receiving area of any two photosensitive devices in any two photosensitive units There is an included angle θ between the line connecting the center of the region and the first direction, and 0°<θ<180°. The image sensor increases the detection points in the second direction, thereby improving the resolution of the image sensor chip, and the area of the photosensitive receiving area of each photosensitive device in the image sensor chip does not decrease, further ensuring that the sensitivity does not decrease.
Description
Technical field
This application involves detection fields, in particular to a kind of image sensor chip and image sensor apparatus.
Background technique
As contact-type image sensor device used in image read-out generally there are multiple linear images to sense
Device chip, the linear image sensor chip include that a line is multiple along the photosensitive of main scanning direction (chip length direction) arrangement
Diode, photodiode carries out photoelectric conversion for receiving ambient light, and converts optical signals to electric signal.Each photosensitive two pole
Pipe has photosensitive reception area, photosensitive reception area can be arranged to corresponding size according to the requirement of resolution sizes.
Photodiode number when resolution ratio improves, on the identical linear image sensor chip main scanning direction of length
Amount needs to increase, and inevitably to reduce the size of the photosensitive reception area of photodiode, in external light intensity and light application time one
Under conditions of fixed, the reduction of photosensitive reception area means that receiving light quantity reduces, and the charge of generation is reduced, i.e. output voltage (sensitivity)
Also reduce therewith, it is difficult to accurately identify image.
Currently, one is will store electricity there are two types of the method for solving sensitivity reduction caused by improving because of resolution ratio is usual
Hold capacity reduce, but storage capacitance capacity reduce after, identical switch noise be added on the small capacitor of capacity can generate it is larger
Voltage change, cause the anti-noise ability of chip to weaken；Another kind is to increase subsequent amplification circuitry multiple, but increase subsequent put
After big circuit multiple, signal and noise are amplified simultaneously, and dark output bias when not receiving light especially will increase, so that chip
Dark output characteristics is deteriorated.
Disclosed information above is used only to reinforce the background technique to technology described herein in the background section
Understanding may include therefore certain information in background technique, these information are to those skilled in the art and not formed
The home known prior art.
Summary of the invention
The main purpose of the application is to provide a kind of image sensor chip and image sensor apparatus, existing to solve
The problem of caused sensitivity declines when the resolution ratio of image sensor chip in technology improves.
To achieve the goals above, according to the one aspect of the application, a kind of image sensor chip is provided, the image
Sensor chip includes multiple photosensitive units, and multiple above-mentioned photosensitive units are arranged successively along first direction, and each above-mentioned photosensitive list
Member includes multiple light-sensitive devices being arranged successively along second direction, and above-mentioned first direction is vertical with above-mentioned second direction, above-mentioned
Second direction be above-mentioned image sensor chip main scanning direction, each above-mentioned light-sensitive device have photosensitive reception area, any two
The area of a above-mentioned photosensitive reception area is all the same and has interval of same size, any in the above-mentioned photosensitive unit of any two
There is angle theta between the line and first direction at the center of the above-mentioned photosensitive reception area of two above-mentioned light-sensitive devices, and 0 ° < θ <
180°。
Further, the projection of shape of the above-mentioned photosensitive reception area of any two on the first plane is all the same, and above-mentioned first
Plane is parallel with above-mentioned first direction and above-mentioned second direction difference.
Further, projection of shape of the above-mentioned photosensitive reception area in above-mentioned first plane is selected from round, square, rectangular
Shape, any one oval with triangle.
Further, the maximum length of each above-mentioned photosensitive reception area in a second direction is L, two above-mentioned light of arbitrary neighborhood
Above-mentioned light-sensitive device in quick unit is one-to-one, and the above-mentioned photosensitive reception of one-to-one two above-mentioned light-sensitive devices
The width of spacing in the above second direction between the center in area is 1/3L~2/3L, preferably 1/2L.
Further, in each above-mentioned photosensitive unit, the interval between arbitrary neighborhood two above-mentioned photosensitive reception areas is identical.
Further, there are two above-mentioned photosensitive units.
Further, above-mentioned image sensor chip further include: control unit, for receiving external timing signal and starting
Signal, and the work for controlling above-mentioned image sensor chip；Storage unit, including multiple memories, each above-mentioned memory
It is electrically connected with above-mentioned control unit, and above-mentioned memory and above-mentioned light-sensitive device correspond electrical connection, above-mentioned memory is used for
Store the voltage signal that corresponding above-mentioned light-sensitive device obtains；Shift unit, with each above-mentioned memory and above-mentioned control unit point
It is not electrically connected, above-mentioned shift unit is for the above-mentioned voltage signal of above-mentioned memory storage to be sequentially output；Amplifying unit, and it is upper
It states shift unit and above-mentioned control unit is electrically connected, what above-mentioned amplifying unit was used to for above-mentioned shift unit being sequentially output
Voltage signal is stated to amplify.
Further, each above-mentioned photosensitive unit further include: multiple first reset switches are corresponded with above-mentioned light-sensitive device
Electrical connection, resetted for the output voltage to corresponding above-mentioned light-sensitive device；First amplifier, with above-mentioned light-sensitive device
One-to-one electrical connection, and the output end of above-mentioned light-sensitive device amplifies with above-mentioned first reset switch and above-mentioned first respectively
Device electrical connection, above-mentioned first amplifier is for amplifying the output voltage of corresponding above-mentioned light-sensitive device.
Further, said memory cells further include multiple sample-hold switch, and above-mentioned sample-hold switch corresponds
Be connected electrically between above-mentioned first amplifier and above-mentioned memory, and above-mentioned memory by above-mentioned sample-hold switch with it is above-mentioned
Control unit electrical connection.
Further, above-mentioned shift unit includes: that multiple signals connect switch, and above-mentioned signal connects switch and above-mentioned storage
Device is electrically connected correspondingly；Shift register is connected switch with above-mentioned control unit and each above-mentioned signal and is electrically connected,
Above-mentioned shift register is successively closed for controlling multiple above-mentioned signals connection switches；Common signal portion connects with each above-mentioned signal
It opens up pass to be electrically connected, the above-mentioned voltage signal that above-mentioned shift register is used to store above-mentioned memory is sequentially inputted to
It states in common signal portion.
Further, above-mentioned amplifying unit includes the second amplifier, above-mentioned second amplifier and above-mentioned common signal portion electricity
Connection, the above-mentioned voltage signal that above-mentioned second amplifier is used to successively transmit common signal portion successively amplify.
Further, above-mentioned common signal portion is made of a common signal line or multiple common signal lines, when above-mentioned
When common signal portion is made of multiple above-mentioned common signal lines, above-mentioned amplifying unit includes multiple above-mentioned second amplifiers, and on
It states the second amplifier to be electrically connected with above-mentioned common signal line one-to-one correspondence, the quantity of above-mentioned common signal line and above-mentioned photosensitive unit
Quantity it is identical, and to connect switch difference electric for corresponding multiple signals connect with an above-mentioned photosensitive unit of above-mentioned common signal line
Connection.
Further, above-mentioned image sensor chip further includes the second reset switch, above-mentioned second reset switch with it is above-mentioned
Common signal portion, above-mentioned second amplifier and control unit are electrically connected, and above-mentioned second reset switch is used for above-mentioned public affairs
Signal section and above-mentioned second amplifier are resetted respectively altogether.
Further, above-mentioned light-sensitive device is photodiode, and above-mentioned photodiode includes N-type region, p type island region, input
Electrode and output electrode, aforementioned p-type area contacts setting with input electrode, and above-mentioned input electrode is grounded, above-mentioned N-type region and output
Electrode contact setting, and above-mentioned output electrode is electrically connected with said memory cells.
Further, above-mentioned image sensor chip further includes substrate, and at least the above photosensitive unit is located at aforesaid substrate
On surface.
According to the another aspect of the application, a kind of image sensor apparatus, including image sensor chip, above-mentioned figure are provided
It is any above-mentioned image sensor chip as sensing chip includes image sensor chip.
Using the technical solution of the application, which relative to existing technologies, increases in a first direction
Add photosensitive unit, and the above-mentioned photosensitive reception area of the above-mentioned light-sensitive device of any two in the above-mentioned photosensitive unit of any two
The line at center and first direction are not parallel, so that test point increases in second direction, to improve image sensor chip
Resolution ratio, and the area of the photosensitive reception area of each light-sensitive device in the image sensor chip does not reduce, and further protects
Not declining for sensitivity is demonstrate,proved.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the structural schematic diagram of the embodiment of the image sensor apparatus according to the application；
Fig. 2 shows the structural schematic diagrams of the image sensor apparatus in embodiments herein 1；
Fig. 3 shows the electrical block diagram of the image sensor apparatus in Fig. 2；
Fig. 4 shows the partial structural diagram of the image sensor apparatus in Fig. 3；
Fig. 5 shows the structural schematic diagram of the image sensor apparatus in embodiments herein 2；
Fig. 6 shows the electrical block diagram of the image sensor apparatus in Fig. 5；
Fig. 7 shows the testing result schematic diagram of the image sensor apparatus in embodiment 1；
Fig. 8 shows the testing result schematic diagram of the image sensor apparatus of embodiment 2.
Wherein, the above drawings include the following reference numerals:
01, substrate；10, photosensitive unit；100, photosensitive reception area；20, control unit；30, storage unit；40, displacement is single
Member；50, the second reset switch；60, amplifying unit；70, working cell；11, the first reset switch；12, light-sensitive device；13,
One amplifier；31, sample-hold switch；32, memory；41, signal connects switch；42, shift register；43, common signal
Portion；430, common signal line；431, the first common signal line；432, the second common signal line；600, the second amplifier.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
It should be understood that when element (such as layer, film, region or substrate) is described as at another element "upper", this yuan
Part can be directly on another element, or intermediary element also may be present.Moreover, in specification and claims, when
When description has element " connected " to another element, which " can be directly connected to " to another element, or pass through third element
" connected " to another element.
As background technique is introduced, when the requirement of the resolution ratio of image sensor chip in the prior art improves,
The quantity of the light-sensitive device needed becomes more, causes the area of the photosensitive reception area of each light-sensitive device to become smaller, so that photosensor
The sensitivity of part declines, and in order to solve technical problem as above, present applicant proposes a kind of image sensor chip and image sensings
Device device.
In a kind of typical embodiment of the application, a kind of image sensor chip is provided, as shown in Figure 1, the figure
As sensor chip includes multiple photosensitive units 10, multiple above-mentioned photosensitive units 10 are arranged successively along first direction, i.e., all
Photosensitive unit is arranged successively along first direction, and each above-mentioned photosensitive unit 10 includes multiple light being arranged successively along second direction
Sensing device 12, above-mentioned first direction is vertical with above-mentioned second direction, and above-mentioned second direction is the master of above-mentioned image sensor chip
Scanning direction, first direction are exactly the moving direction of determinand, and second direction is also the length direction of image sensor chip, respectively
Above-mentioned light-sensitive device 12 has photosensitive reception area 100, and for receiving ambient light, the light-sensitive device for receiving ambient light carries out photoelectricity
Conversion, converts optical signals to voltage signal.Also, the area of the above-mentioned photosensitive reception area 100 of any two is all the same and has
The area at interval of same size, i.e., all photosensitive reception areas in image sensor chip is all the same, is spaced in second party
Upward width is all the same, ensures that the light quantity that all photosensitive reception areas receive is identical, further guarantor in this way
The available accurate detection image of subsequent image sensor device is demonstrate,proved.Any two in the above-mentioned photosensitive unit 10 of any two
There is angle theta, and 0 ° < θ between the line and first direction at the center of the above-mentioned photosensitive reception area 100 of a above-mentioned light-sensitive device 12
< 180 °, i.e., line is not parallel with first direction, increasing for test point in second direction is allowed in this way, to improve resolution
Rate.
Above-mentioned image sensor chip relative to existing technologies, increases photosensitive unit, and appoint in a first direction
The line at the center of the above-mentioned photosensitive reception area 100 of the above-mentioned light-sensitive device 12 of any two in two above-mentioned photosensitive units 10 of meaning
It is not parallel with first direction, so that test point increases in second direction, so that the resolution ratio of image sensor chip is improved, and
The area of the photosensitive reception area of each light-sensitive device in the image sensor chip does not reduce, and further ensures sensitivity not
Decline.
It should be noted that the application does not define the interval of multiple photosensitive units in a first direction, the two
Between interval it is smaller, detection accuracy is higher, but due to the limitation of photoetching process, interval between the two can not also now
Accomplish very little.
The shape of the photosensitive reception area of any two of the application may be the same or different that (difference here includes portion
It is point different with it is all different), as long as area is identical, those skilled in the art can according to the actual situation will be arbitrarily photosensitive
Reception area is set as same or different shape.
In order to simplify the structure and technique of image sensor chip, in a kind of embodiment of the application, as shown in Figure 1, appointing
The projection of shape of two above-mentioned photosensitive reception areas 100 on the first plane of anticipating is all the same, above-mentioned first plane and above-mentioned first party
To parallel with above-mentioned second direction difference.
The shape of the projection of the photosensitive reception area of the application on the first plane can choose any shape in the prior art
Shape, including any regularly or irregularly shape, those skilled in the art simultaneously can be according to the actual situation by photosensitive reception areas
It is set as suitable shape.
In a kind of specific embodiment of the application, projection shape of the above-mentioned photosensitive reception area 100 in above-mentioned first plane
Shape is selected from circle, square, rectangle, any one oval with triangle.In image sensor chip as shown in Figure 1,
Projection of shape of the above-mentioned photosensitive reception area 100 in above-mentioned first plane is square.
In a kind of embodiment of the application, the maximum length of each above-mentioned photosensitive reception area 100 in a second direction is L, is appointed
The above-mentioned light-sensitive device 12 in two neighboring above-mentioned photosensitive unit 10 of anticipating is one-to-one, and one-to-one two above-mentioned light
The width of spacing in a second direction between the center of the above-mentioned photosensitive reception area 100 of sensing device 12 be 1/3L~2/3L it
Between, i.e., corresponding two photosensitive reception areas in two adjacent photosensitive units shift to install, and the 1/3L~2/3L that misplaces.In this way
It may further ensure that the raising of detection accuracy.
In a kind of specific embodiment of the application, as shown in Fig. 2, one-to-one two above-mentioned light-sensitive devices 12 is upper
Stating the width of spacing in a second direction between the center of photosensitive reception area 100 is 1/2L.It can be further improved inspection in this way
Survey precision.
To further simplify the structure, simplify technique, in a kind of embodiment of the application, as shown in Fig. 2, each above-mentioned photosensitive
In unit 10, the interval between arbitrary neighborhood two above-mentioned photosensitive reception areas 100 is identical.
Certainly, the interval between the photosensitive reception area of above-mentioned any two of the application can not be identical, those skilled in the art
Member can according to the actual situation by between the photosensitive reception area of any two be set to all it is not identical, part it is not identical or
Person is all identical.
In a kind of specific embodiment, as shown in Fig. 2, above-mentioned photosensitive unit 10 only there are two.Such imaging sensor
The structure of chip is simpler, and can guarantee that the resolution ratio of the image sensor chip is the image of only one photosensitive unit
Twice of sensor chip.Resolution ratio for example, by using the image sensor chip of only one photosensitive unit is 1200DPI, and
The tool is 2400DPI there are two the resolution ratio of the image sensor chip of photosensitive unit.
Also, by setting corresponding light-sensitive device in two photosensitive units in suitable misalignment position, moreover it is possible into
High-precision detection is more accurately realized in the guarantee of one step.
In another specific embodiment of the application, as the above-mentioned image sensor chip of Fig. 1 further include control unit 20,
Storage unit 30, shift unit 40 and amplifying unit 60.Wherein, control unit 20, for receiving external timing signal and starting
Signal, and the work for controlling above-mentioned image sensor chip；Storage unit 30 includes multiple memories 32, each above-mentioned storage
Device 32 is electrically connected with above-mentioned control unit 20, and control unit controls the storing process of memory, and above-mentioned memory 32 is for storing
The voltage signal that corresponding above-mentioned light-sensitive device 12 obtains；Shift unit 40 and each above-mentioned memory 32 and above-mentioned control unit 20
It is electrically connected, above-mentioned shift unit 40 is for the above-mentioned voltage signal that above-mentioned memory 32 stores to be sequentially output；Amplification is single
Member 60 is electrically connected with above-mentioned shift unit 40 and above-mentioned control unit 20, and above-mentioned amplifying unit 60 is used for above-mentioned displacement list
The above-mentioned voltage signal that member 40 is sequentially output amplifies.In the embodiment, by the way that control unit, storage unit, displacement is arranged
Unit and amplifying unit are successively handled come the electric signal generated to light-sensitive device, and electric signal obtains such that treated
Accurate detection image.
In order to enable photosensitive unit obtains accurate voltage signal, and simultaneously in order to enable the voltage letter of photosensitive unit output
Number be not it is too small, as shown in Fig. 3, Fig. 4 and Fig. 6, in a kind of embodiment of the application, each above-mentioned photosensitive unit 10 further includes multiple
First reset switch 11 and the first amplifier 13, the first reset switch 11 are electrically connected correspondingly with above-mentioned light-sensitive device 12,
Before light-sensitive device test, first reset switch closure is controlled, first reset switch is to corresponding above-mentioned light-sensitive device 12
Output voltage resetted, initialize the output voltage of light-sensitive device, so that the output voltage of each light-sensitive device is consistent, keep away
Influence of other extraneous factors to test result is exempted from, so that the test result of light-sensitive device is more accurate；First amplifier
13 are electrically connected correspondingly with above-mentioned light-sensitive device 12, and the output end of above-mentioned light-sensitive device 12 is resetted with above-mentioned first respectively
Switch 11 and the electrical connection of above-mentioned first amplifier, above-mentioned first amplifier is for the output to corresponding above-mentioned light-sensitive device 12
Voltage amplifies.
In the another embodiment of the application, as shown in Fig. 3, Fig. 4 and Fig. 6, said memory cells 30 further include multiple adopt
Sample keeps switch 31, and the above-mentioned one-to-one correspondence of sample-hold switch 31 is connected electrically in above-mentioned first amplifier 13 and above-mentioned memory 32
Between, and above-mentioned memory 32 is electrically connected by above-mentioned sample-hold switch 31 with above-mentioned control unit 20.Specifically, with Fig. 3,
For Fig. 4 and image sensor chip shown in fig. 6, to illustrate the course of work of sample-hold switch, controlled in control unit
After each first reset switch 11 initializes the output voltage of light-sensitive device 12, control unit controls each first reset switch
11 disconnect, and control each sample-hold switch 31 simultaneously and be closed, at this point, light-sensitive device reception ambient light, accumulated charge, generation
Voltage signal, after the amplification of the first amplifier 13, in memory 32, then control unit controls sample-hold switch for storage
31 disconnect, and the in store sample-hold switch 31 of memory all in this way disconnect the storage voltage of moment.
As shown in Fig. 3, Fig. 4 and Fig. 6, in a kind of specific embodiment of the application, above-mentioned memory is storage capacitance.When
So, the memory of the application is not limited to above-mentioned storage capacitance, can also be that other can store the memory of voltage signal.
It is sequentially output in order to enable shift unit can preferably control the above-mentioned voltage signal that above-mentioned memory 32 stores,
In a kind of embodiment of the application, as shown in Fig. 3, Fig. 4 and Fig. 6, above-mentioned shift unit 40 include multiple signals connect switch 41,
Shift register 42 and common signal portion 43.Wherein, above-mentioned signal connects switch 41 and above-mentioned memory 32 is electric correspondingly
Connection；Shift register 42 is connected switch 41 with above-mentioned control unit 20 and each above-mentioned signal and is electrically connected, above-mentioned displacement
Register 42 is successively closed for controlling multiple above-mentioned signals connection switches 41；Common signal portion 43 is turned on each above-mentioned signal
It closes 41 to be electrically connected, above-mentioned shift register 42 is for the above-mentioned voltage signal that above-mentioned memory 32 stores to be sequentially inputted to
In above-mentioned common signal portion 43.
In another embodiment of the application, as shown in Fig. 3, Fig. 4 and Fig. 6, above-mentioned amplifying unit 60 includes the second amplification
Device 600, above-mentioned second amplifier 600 are electrically connected with above-mentioned common signal portion 43, and above-mentioned second amplifier 600 is used for public letter
The above-mentioned voltage signal that number portion 43 successively transmits successively amplifies.
It should be noted that the first amplifier and the second amplifier of the application can be independently selected from the prior art
Any amplifier.In a kind of specific embodiment of the application, above-mentioned first amplifier and the second amplifier are difference
Amplifier, there are two input terminal, respectively positive input terminal and negative input end, positive input terminal inputs to need to amplify for difference amplifier tool
Voltage signal, negative input end input reference voltage.
The above-mentioned common signal portion 43 of the application can be made of a common signal line 430, i.e., only public with one
Signal wire, in embodiment as shown in Figure 3, the voltage signal of memory storages all so is successively transferred to the common signal
On line.Certainly, above-mentioned common signal portion 43 can be made of multiple common signal lines 430, as shown in fig. 6, above-mentioned amplifying unit
60 include multiple above-mentioned second amplifiers 600, and above-mentioned second amplifier 600 and above-mentioned common signal line 430 correspond electricity
Connection, the quantity of above-mentioned common signal line 430 is identical as the quantity of above-mentioned photosensitive unit 10, and above-mentioned common signal line 430 is right
Multiple signals that the above-mentioned photosensitive units 10 of Ying Yuyi connect are connected switch 41 and are electrically connected, i.e., each common signal line only with
Multiple signals of one photosensitive unit connection are connected switch 41 and are electrically connected, the voltage signal on such a common signal line
For the corresponding multiple voltage signals of the photosensitive unit, each second amplifier is corresponding to amplify the corresponding voltage letter of the photosensitive unit
Number.
Certainly, when above-mentioned common signal portion 43 can be made of multiple common signal lines 430, specific common signal line with
The corresponding relationship of photosensitive unit is not limited to the description above, can also be multiple photosensitive units being divided into several groups, one group of correspondence
One common signal line, i.e. voltage signal on some or each common signal line are the corresponding multiple electricity of multiple photosensitive units
Signal is pressed, multiple voltage signals of the same photosensitive unit cannot be corresponded to certainly, on different common signal lines.Those skilled in the art
The common signal line of quantity can be arranged in member according to the actual situation, and corresponding multiple voltages by appropriate number of photosensitive unit are believed
It number is sequentially inputted on the common signal line.
In order to further ensure the accuracy of testing result, in a kind of embodiment of the application, such as Fig. 3, Fig. 4 and Fig. 6 institute
Show, above-mentioned image sensor chip further includes the second reset switch 50, above-mentioned second reset switch 50 and above-mentioned common signal portion
43, above-mentioned second amplifier 600 and control unit 20 are electrically connected, and above-mentioned second reset switch 50 is used for above-mentioned public
Signal section 43 and above-mentioned second amplifier 600 are resetted respectively.Specifically, control unit is disconnected in control sample-hold switch
Afterwards, just the second reset switch of control is closed, and is resetted to the second amplifier and common signal line, is controlled the second reset later and is opened
Shutdown is opened.
The light-sensitive device of the application can be any light-sensitive device in the prior art, such as photodiode and photosensitive three
Pole pipe, those skilled in the art can select suitable light-sensitive device according to the actual situation.
In a kind of embodiment of the application, as shown in figure 4, above-mentioned light-sensitive device 12 be photodiode, above-mentioned photosensitive two
Pole pipe includes N-type region, p type island region, input electrode and output electrode, and aforementioned p-type area contacts setting, and above-mentioned input with input electrode
Electrode ground connection, above-mentioned N-type region contacts setting with output electrode, and above-mentioned output electrode is electrically connected with said memory cells.It is photosensitive
Diode structure is simple, and cost is relatively low.
In a kind of specific embodiment, as shown in Figure 1, Figure 2 and shown in Fig. 5, above-mentioned image sensor chip further includes substrate 01,
At least the above photosensitive unit 10 is located on the surface of aforesaid substrate 01.
Certainly, when image sensor chip includes control unit, storage unit, shift unit and amplifying unit, these
Unit is also disposed on substrate, as shown in Figure 1, Figure 2 and shown in Fig. 5.
In the typical embodiment of the another kind of the application, a kind of image sensor apparatus is provided, the imaging sensor
Device includes above-mentioned any image sensor chip.
Above-mentioned image sensor apparatus is due to including above-mentioned image sensor chip, so that its resolution ratio is higher,
And image is more accurate.
It should be noted that in order to facilitate diagram in the application, by first reset switch 11, light-sensitive device 12, one
It is whole as one that 13, one, a first amplifier memory 32 of sample-hold switch 31, one connects switch 41 with a signal
Body is shown in Fig. 3 and Fig. 6, and referred to as working cell 70, and the particular circuit configurations schematic diagram of the working cell is Fig. 4.
In order to enable those skilled in the art can clearly understand the technical solution of the application, below with reference to tool
The embodiment of body illustrates the technical solution of the application.
Embodiment 1
As shown in Fig. 2, the embodiment is realized with the photosensitive reception area size of photodiode used in common 600DPI and interval
The function of main scanning direction 1200DPI.
As shown in Fig. 2, the image sensor chip includes 01, two photosensitive unit 10 of substrate, control unit 20, storage list
Member 30, shift unit 40, the second reset switch 50 and amplifying unit 60.Two photosensitive units 10, control unit 20, storage unit
30, shift unit 40, the second reset switch 50 and amplifying unit 60 are arranged on substrate 01, and two photosensitive units 10 along
First direction arrangement.
Each photosensitive unit includes multiple light-sensitive devices 12 being arranged successively along second direction, multiple first reset switches 11
And multiple first amplifiers 13.One end of first reset switch 11 is electrically connected correspondingly with above-mentioned light-sensitive device 12, separately
One end is connected with reference voltage Vreset, and Vreset is the internal reference voltage generated.First amplifier 13 and above-mentioned photosensor
Part 12 is electrically connected correspondingly, and light-sensitive device is photodiode, and p type island region contacts setting with input electrode, and above-mentioned
Input electrode ground connection, N-type region contact setting with output electrode, and above-mentioned output electrode respectively with the first reset switch and first
Amplifier electrical connection.
Each photodiode includes photosensitive region, and the projection of each photosensitive region on the first plane is square, and
Size is equal, and the number of the photosensitive reception area 100 of first photosensitive unit and second photosensitive unit is 432, each
A length of 40 microns of photosensitive reception area 100, width are 40 microns, and neighboring photosensitive receives district center on main scanning direction (second direction)
42.3 microns of interval, the photosensitive reception area of the center line of the photosensitive reception area of first photosensitive unit and second photosensitive unit
42.3 microns of 100 centerline, and the center of first photosensitive reception area of second photosensitive unit and first it is photosensitive
The center of first photosensitive reception area of unit misplaces 21.15 microns in a second direction, the image sensor chip long 18.3
Millimeter, it is 500 microns wide.
Control unit 20 is signal processing circuit, is mainly provided with input pin SI and CLK, for receiving external clock letter
Number and initial signal, be responsible for whole image sensor chip working sequence.
Storage unit 30 includes multiple memories 32 and multiple sample-hold switch 31, and above-mentioned sample-hold switch 31 is one by one
Correspondence be connected electrically between above-mentioned light-sensitive device 12 and above-mentioned memory 32, above-mentioned sample-hold switch 31 also with above-mentioned control list
Member 20 is electrically connected, and above-mentioned memory 32 is for storing the voltage signal that corresponding above-mentioned light-sensitive device 12 obtains.
Above-mentioned shift unit 40 includes that multiple signals connect switch 41, shift register 42 and common signal portion 43.Wherein,
Above-mentioned signal is connected switch 41 and is electrically connected correspondingly with above-mentioned memory 32；Shift register 42 and above-mentioned control unit 20
And each above-mentioned signal is connected switch 41 and is electrically connected, above-mentioned shift register 42 is turned on for controlling multiple above-mentioned signals
41 are closed successively to be closed；Common signal portion 43 includes a common signal line 430, which connects with each above-mentioned signal
It opens up pass 41 to be electrically connected, the above-mentioned voltage signal that above-mentioned shift register 42 is used to store above-mentioned memory 32 is successively defeated
Enter onto above-mentioned common signal portion 43.
Above-mentioned amplifying unit 60 includes the second amplifier 600, above-mentioned second amplifier 600 and above-mentioned 43 electricity of common signal portion
Connection, the above-mentioned voltage signal that above-mentioned second amplifier 600 is used to successively transmit common signal portion 43 successively amplify.The
Two amplifiers 600 are differential amplifier circuit, and there are two input terminal and output end, two input terminals are respectively positive input terminal and bear tool
Input terminal, positive input terminal are electrically connected with common signal line, and negative input end is electrically connected with reference voltage VREF, are used for common signal
The difference of voltage signal and reference voltage VREF amplifies on line.
Above-mentioned second reset switch 50 and above-mentioned common signal line 430, above-mentioned second amplifier 600 and control unit 20
Be electrically connected, above-mentioned second reset switch 50 be used for above-mentioned common signal portion 43 and above-mentioned second amplifier 600 respectively into
Row resets, and is reset to reference voltage VREF, and VREF is the external reference voltage provided.
Image sensor chip works by following timing, and signal processing circuit detects initial pulse signal SI arrival
Afterwards, all first reset switches 11 are closed, the output voltage for initializing photodiode is Vreset.Then, control is all
First reset switch 11 disconnects, while controlling all sample-hold switch 31 and being closed, and photodiode receives ambient light at this time, stores
Accumulated charge, the voltage of generation are stored in the storage electricity as memory 32 by after the first amplifier 13 amplification of each pixel unit
Rong Zhong.
Then, signal processing circuit controls all sample-hold switch 31 and disconnects, and sample-hold switch 31 all in this way are disconnected
Open the voltage of the first amplifier of moment.Later, signal processing circuit is controlled after the second reset switch 50 is connected and is disconnected, to public
Signal wire 430 and the second amplifier 600 are resetted；Shift register 42 successively controls each signal connection switch 41 and successively closes
It closes, the voltage of memory 32 is fed sequentially on common signal line 430 and is amplified.
Output timing is as shown in fig. 7, first light-sensitive device correspondence that the port SIG is sequentially output first photosensitive unit is put
Voltage signal after big, first light-sensitive device of second photosensitive unit correspond to amplified voltage signal, and first photosensitive
Second light-sensitive device of unit corresponds to amplified voltage signal, and second light-sensitive device correspondence of second photosensitive unit is put
Voltage signal after big, until the 864th voltage signal output finishes.Photosensitive reception area size when thus with 600DPI,
864 pixel voltages of output on 18.3 mm lengths are realized, using the voltage of 864 pixels as data line, i.e.,
It can reach the resolution ratio of 1200DPI.Due to each photodiode photosensitive reception area size be 600DPI when size, so
While 1200DPI on realizing main scanning direction, corresponding sensitivity is remained unchanged.
Embodiment 2
The structure of image sensor chip in the embodiment is essentially identical with embodiment 1, as shown in fig. 6, the implementation
Example difference from example 1 is that:
As shown in fig. 6, common signal portion is made of two common signal lines 430,431 He of respectively the first common signal line
Second common signal line 432, the corresponding photosensitive unit of each common signal line 430, shift register 42 control two light simultaneously
The amplified electric signal of quick unit successively with the connection of corresponding common signal line 430.Amplifying unit is amplified by two second
Device 600 forms, and amplifies the voltage on two common signal lines 430 respectively, is concurrently drawn from output by the control of shift register 42
Foot SIG1 and SIG2 output.Its circuit block diagram is as shown in fig. 6, each signal of first photosensitive unit amplifies by the first amplifier
432 voltage signals afterwards are sequentially inputted on the first common signal line 431, and the first common signal line 431 and one second
The positive input terminal of amplifier 600 is connected；Each signal of second photosensitive unit passes through amplified 432 voltage of the first amplifier
Signal is sequentially inputted on the second common signal line 432, and the second common signal line 432 and second amplifier 600 are just
Input terminal is connected.The negative input end of two the second amplifiers 600 is connected with reference voltage VREF, the second reset switch 50
One end is connected with the first common signal line 431 and the second common signal line 432 respectively, one end and two the second amplifiers 600
Negative input end be respectively connected with.
The workflow of the image sensor chip is as follows: image sensor chip works by following timing, signal
After processing circuit detects initial pulse signal SI arrival, all first reset switches 11 are closed, initialize photodiode
Output voltage be Vreset.Then, all first reset switches 11 are controlled to disconnect, while controls all sample-hold switch 31
Closure, photodiode receives ambient light at this time, and the voltage of accumulated charge, generation is put by the first amplifier 13 of each pixel unit
After big, it is stored in the storage capacitance as memory 32.
Then, signal processing circuit controls all sample-hold switch 31 and disconnects, and sample-hold switch 31 all in this way are disconnected
Open the voltage of the first amplifier of moment.Later, signal processing circuit is controlled after the second reset switch 50 is connected and is disconnected, to two
Common signal line 430 and two the second amplifiers 600 are resetted respectively；Shift register 42 controls two photosensitive units simultaneously
Signal connect switch 41 be successively closed, it is public that corresponding 432 voltage signals of first photosensitive unit are successively sent to first
On signal wire 431, by the amplification output of second amplifier 600, by corresponding 432 voltage signals of second photosensitive unit according to
It is secondary to be sent on the second common signal line 432, by another second amplifier 600 amplify export, output timing as shown in figure 8,
The port SIG1 is sequentially output 432 voltage signals of first photosensitive unit, and the port SIG2 is sequentially output second photosensitive unit
432 voltage signals.Photosensitive reception area size when thus with resolution ratio 600DPI is realized on main scanning direction
The effect of 1200DPI resolution ratio, corresponding sensitivity is constant, and due to being two rows of parallel while exporting, identical driving clock
Under frequency condition, sweep time also reduces, and can be applied to the occasion quickly read.
When the resolution ratio of above-mentioned two embodiment of the application on main scanning direction doubles, low resolution is still used
The size of Shi Guangmin reception area while not reducing sensitivity, and can guarantee that signal-to-noise ratio and dark output are consistent with low resolution.It adopts
The scheme exported simultaneously with two rows of pixel units, also can be improved scanning speed, the occasion suitable for high-velocity scanning.
It can be seen from the above description that the application the above embodiments realize following technical effect:
1), the image sensor chip of the application relative to existing technologies, increases photosensitive unit in a first direction,
And the line at the center of the above-mentioned photosensitive reception area of the above-mentioned light-sensitive device of any two in the above-mentioned photosensitive unit of any two with
First direction is not parallel, so that test point increases, to improve the resolution ratio of image sensor chip, and the imaging sensor
The area of the photosensitive reception area of each light-sensitive device in chip does not reduce, and further ensures not declining for sensitivity.
2), the image sensor apparatus of the application is due to including above-mentioned image sensor chip, so that its resolution ratio
It is higher, and image is more accurate.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (16)
1. a kind of image sensor chip, which is characterized in that described image sensor chip includes multiple photosensitive units (10), more
A photosensitive unit (10) is arranged successively along first direction, and each photosensitive unit (10) includes multiple along second direction
The light-sensitive device (12) being arranged successively, the first direction is vertical with the second direction, and the second direction is described image
The main scanning direction of sensor chip, each light-sensitive device (12) have photosensitive reception area (100), photosensitive described in any two
The area of reception area (100) is all the same and has interval of same size, any in photosensitive unit (10) described in any two
There is angle theta between the line and first direction at the center of the photosensitive reception area (100) of two light-sensitive devices (12),
And 0 ° < θ < 180 °.
2. image sensor chip according to claim 1, which is characterized in that photosensitive reception area described in any two
(100) on the first plane projection of shape is all the same, and first plane and the first direction and the second direction are divided
It is not parallel.
3. image sensor chip according to claim 2, which is characterized in that the photosensitive reception area (100) is described
Projection of shape in first plane is selected from circle, square, rectangle, any one oval with triangle.
4. image sensor chip according to claim 2, which is characterized in that each photosensitive reception area (100) is
Maximum length on two directions is L, and the light-sensitive device (12) in arbitrary neighborhood two photosensitive units (10) is one by one
It is corresponding, and the spacing between the center of the photosensitive reception area (100) of one-to-one two light-sensitive devices (12)
Width in this second direction is 1/3L~2/3L, preferably 1/2L.
5. image sensor chip according to claim 1, which is characterized in that in each photosensitive unit (10), arbitrarily
Interval between the two neighboring photosensitive reception area (100) is identical.
6. image sensor chip according to claim 1, which is characterized in that there are two the photosensitive units (10).
7. image sensor chip according to any one of claim 1 to 6, which is characterized in that described image sensor
Chip further include:
Control unit (20), for receiving external timing signal and initial signal, and for controlling described image sensor chip
Work；
Storage unit (30), including multiple memories (32), each memory (32) are electrically connected with described control unit (20),
And the memory (32) and the light-sensitive device (12) correspond electrical connection, the memory (32) is corresponding for storing
The voltage signal that the light-sensitive device (12) obtains；
Shift unit (40) is electrically connected, the shift unit with each memory (32) and described control unit (20)
(40) for the voltage signal that the memory (32) store to be sequentially output；
Amplifying unit (60) is electrically connected, the amplifying unit with the shift unit (40) and described control unit (20)
(60) for amplifying the voltage signal that the shift unit (40) is sequentially output.
8. image sensor chip according to claim 7, which is characterized in that each photosensitive unit (10) further include:
Multiple first reset switches (11), are electrically connected correspondingly with the light-sensitive device (12), for corresponding described
The output voltage of light-sensitive device (12) is resetted；
First amplifier (13) is electrically connected correspondingly with the light-sensitive device (12), and the light-sensitive device (12) is defeated
Outlet is electrically connected with first reset switch (11) and first amplifier respectively, and first amplifier is used for right
The output voltage for the light-sensitive device (12) answered amplifies.
9. image sensor chip according to claim 8, which is characterized in that the storage unit (30) further includes multiple
Sample-hold switch (31), the sample-hold switch (31), which corresponds, is connected electrically in first amplifier (13) and described
Between memory (32), and the memory (32) is electrically connected by the sample-hold switch (31) and described control unit (20)
It connects.
10. image sensor chip according to claim 7, which is characterized in that the shift unit (40) includes:
Multiple signals connect switch (41), and the signal connects switch (41) and is electrically connected correspondingly with the memory (32)
It connects；
Shift register (42) is connected switch (41) with described control unit (20) and each signal and is electrically connected, institute
It states shift register (42) and is successively closed for controlling multiple signals connection switches (41)；
Common signal portion (43) connects switch (41) with each signal and is electrically connected, and the shift register (42) is used for
The voltage signal that the memory (32) store is sequentially inputted on the common signal portion (43).
11. image sensor chip according to claim 10, which is characterized in that the amplifying unit (60) includes second
Amplifier (600), second amplifier (600) are electrically connected with the common signal portion (43), second amplifier (600)
The voltage signal for successively transmitting common signal portion (43) successively amplifies.
12. image sensor chip according to claim 11, which is characterized in that the common signal portion (43) is by one
Common signal line (430) or multiple common signal lines (430) composition, when the common signal portion (43) is by multiple described public
When signal wire (430) forms, the amplifying unit (60) includes multiple second amplifiers (600), and described second amplifies
Device (600) is corresponded with the common signal line (430) and is electrically connected, the quantity of the common signal line (430) and the light
The quantity of quick unit (10) is identical, and the common signal line (430) it is corresponding connect with a photosensitive unit (10) it is more
A signal is connected switch (41) and is electrically connected.
13. image sensor chip according to claim 11, which is characterized in that described image sensor chip further includes
Second reset switch (50), second reset switch (50) and the common signal portion (43), second amplifier (600)
And control unit (20) is electrically connected, second reset switch (50) is used for the common signal portion (43) and described
Second amplifier (600) is resetted respectively.
14. image sensor chip according to claim 7, which is characterized in that the light-sensitive device (12) is photosensitive two
Pole pipe, the photodiode include N-type region, p type island region, input electrode and output electrode, and the p type island region is contacted with input electrode
Setting, and the input electrode is grounded, the N-type region contacts setting, and the output electrode and the storage with output electrode
Unit electrical connection.
15. image sensor chip according to claim 1, which is characterized in that described image sensor chip further includes
Substrate (01), at least described photosensitive unit (10) are located on the surface of the substrate (01).
16. a kind of image sensor apparatus, including image sensor chip, which is characterized in that described image sensing chip includes figure
As the described image sensing chip that sensing chip is any one of claims 1 to 15.
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| JPH09205518A (en) * | 1996-01-26 | 1997-08-05 | Rohm Co Ltd | Image sensor and image sensor chip |
| US6803957B1 (en) * | 1998-02-02 | 2004-10-12 | Seiko Instruments Inc. | Image sensor |
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| JP2009253930A (en) * | 2008-04-11 | 2009-10-29 | Rohm Co Ltd | Photoelectric converter, image sensor, and image processor |
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