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CN109270726B - 一种阵列基板、显示面板及显示装置 - Google Patents

一种阵列基板、显示面板及显示装置 Download PDF

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CN109270726B
CN109270726B CN201811396701.6A CN201811396701A CN109270726B CN 109270726 B CN109270726 B CN 109270726B CN 201811396701 A CN201811396701 A CN 201811396701A CN 109270726 B CN109270726 B CN 109270726B
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electrode
pixel
array substrate
transistor
substrate
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CN109270726A (zh
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白璐
薛艳娜
包智颖
张勇
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Priority to US16/631,448 priority patent/US11086178B1/en
Priority to PCT/CN2019/082686 priority patent/WO2020103387A1/en
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Abstract

本发明公开了一种阵列基板、显示面板及显示装置，包括：衬底基板、依次位于衬底基板上的反射电极、第一绝缘层、像素电极、第二绝缘层和公共电极；其中，公共电极与反射电极之间电连接；公共电极与像素电极相互交叠构成第一电容；像素电极与反射电极相互交叠构成第二电容。通过将公共电极与反射电极之间电连接，并设置公共电极与像素电极相互交叠构成第一电容，以及像素电极与反射电极相互交叠构成第二电容，使得第一电容与第二电容并联，从而增大了像素内的电容，进而提高了在低频驱动和高分辨率的条件下的像素电压保持能力。

Description

一种阵列基板、显示面板及显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板、显示面板及显示装置。
背景技术
目前，全反射、半透半反等反射式显示面板在电子价签、智能穿戴和户外便携等领域应用广泛，此类显示面板的最大优势是在不影响其显示特性的前提下尽量降低显示功耗，显示功耗大约为几十微瓦。具体地，低功耗显示主要依靠低频驱动来实现。然而在低频驱动下，1帧时间较长，通常在1s以上，像素漏电时间较长，不利于像素电压保持。尤其对于高分辨率(PPI)要求的产品，像素尺寸较小，像素内存储电容空间不足，导致低频状态下，高PPI产品无法满足像素电压保持要求。
发明内容
有鉴于此，本发明实施例提供一种阵列基板、显示面板及显示装置，用以解决在低频驱动和高分辨率的条件下，提高像素电压保持能力。
因此，本发明实施例提供的一种阵列基板，包括：衬底基板、依次位于所述衬底基板上的反射电极、第一绝缘层、像素电极、第二绝缘层和公共电极；其中，
所述公共电极与所述反射电极之间电连接；
所述公共电极与所述像素电极相互交叠构成第一电容；
所述像素电极与所述反射电极相互交叠构成第二电容。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，还包括：依次位于所述反射电极所在层面向所述衬底基板一侧的树脂层和晶体管；
所述晶体管的漏极与所述像素电极电连接；
所述反射电极与所述晶体管的漏极相互交叠构成第三电容。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，还包括：与所述晶体管的栅极同层设置且与所述公共电极电连接的公共电极线，以及位于所述晶体管的漏极所在层与所述晶体管的栅极所在层之间的栅绝缘层；
所述公共电极线与所述晶体管的漏极相互交叠构成第四电容。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，所述晶体管的栅极为双栅极。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，还包括：与所述晶体管的栅极电连接的栅线，以及与所述晶体管的源极电连接的数据线；
所述公共电极在所述衬底基板上的正投影，覆盖所述栅线、所述数据线、以及由所述栅线和所述数据线限定的像素区域在所述衬底基板上的正投影。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，所述反射电极在所述衬底基板上的正投影覆盖所述像素区域在所述衬底基板上的正投影。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，所述公共电极与所述反射电极通过贯穿所述第一绝缘层和所述第二绝缘层的通孔电连接；
每一所述像素区域内的所述像素电极设置有过孔，且所述过孔在所述衬底基板上的正投影覆盖所述通孔在所述衬底基板上的正投影。
在一种可能的实现方式中，在本发明实施例提供的上述阵列基板中，所述公共电极，包括：多个公共子电极，所述多个公共子电极之间相互绝缘；
所述阵列基板还包括多条触控电极线，与所述反射电极同层设置；
所述多条触控电极线与所述多个公共子电极一一对应电连接。
基于同一发明构思，本发明实施例还提供了一种显示面板，包括上述阵列基板。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括上述显示面板。
本发明有益效果如下：
本发明实施例提供的一种阵列基板、显示面板及显示装置，包括：衬底基板、依次位于衬底基板上的反射电极、第一绝缘层、像素电极、第二绝缘层和公共电极；其中，公共电极与反射电极之间电连接；公共电极与像素电极相互交叠构成第一电容；像素电极与反射电极相互交叠构成第二电容。通过将公共电极与反射电极之间电连接，并设置公共电极与像素电极相互交叠构成第一电容，以及像素电极与反射电极相互交叠构成第二电容，使得第一电容与第二电容并联，从而增大了像素内的电容，进而提高了在低频驱动和高分辨率的条件下的像素电压保持能力。
附图说明
图1为本发明实施例提供的阵列基板的结构示意图之一；
图2为图1所示阵列基板的剖面结构示意图；
图3为本发明实施例提供的阵列基板中电容并联的示意图；
图4为本发明实施例提供的阵列基板的结构示意图之二。
具体实施方式
下面结合附图，对本发明实施例提供的阵列基板、显示面板及显示装置的具体实施方式进行详细的说明。需要说明的是本说明书所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例；并且在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合；此外，基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
附图中各膜层的形状和大小不反映其在阵列基板中的真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种阵列基板，如图1至图3所示，包括：衬底基板101、依次位于衬底基板101上的反射电极102、第一绝缘层103、像素电极104、第二绝缘层105和公共电极106；其中，
公共电极106与反射电极102之间电连接；
公共电极106与像素电极104相互交叠构成第一电容Cst1；
像素电极104与反射电极102相互交叠构成第二电容Cst2。
在本发明实施例提供的上述阵列基板中，通过将公共电极106与反射电极102之间电连接，并设置公共电极106与像素电极104相互交叠构成第一电容Cst1，以及像素电极104与反射电极102相互交叠构成第二电容Cst2，使得第一电容Cst1与第二电容Cst2并联，从而增大了像素内的电容，进而提高了在低频驱动和高分辨率的条件下的像素电压保持能力。
可以理解的是，在本发明实施例提供的上述阵列基板中，公共电极106与反射电极102之间电连接，具体可以通过贯穿第一绝缘层103和第二绝缘层105的通孔A来实现，如图1和图2所示，进而使得公共(Vcom)信号经反射电极102传递至公共电极106。且为了避免公共电极106与像素电极104上所加载的信号相互干扰，一个像素区域内的像素电极104上的过孔H在衬底基板101上的正投影应覆盖通孔A在衬底基板101上的正投影，即一个像素区域内的像素电极104上的过孔H尺寸应大于通孔A的尺寸。
在具体实施时，为进一步提高像素电压保持能力，在本发明实施例提供的上述阵列基板中，如图1至图3所示，还可以包括：依次位于反射电极102所在层面向衬底基板101一侧的树脂层107和晶体管100；
晶体管100的漏极108与像素电极104电连接；
反射电极102与晶体管100的漏极108相互交叠构成第三电容Cst3。
在本发明实施例提供的上述阵列基板中，通过设置晶体管100的漏极108与像素电极104电连接；反射电极102与晶体管100的漏极108相互交叠构成第三电容Cst3，使得第一电容Cst1、第二电容Cst2、第三电容Cst3三者并联，从而进一步增大了像素内的电容，有效提高了在低频驱动和高分辨率的条件下的像素电压保持能力。
可以理解的是，在本发明实施例提供的上述阵列基板中，晶体管100的漏极108与像素电极104电连接，具体可以通过贯穿第一绝缘层103和树脂层107的通孔B来实现，进而使得像素(Pixel)信号经晶体管100的漏极108传递至像素电极104，如图1和图2所示。且为了避免像素电极104与反射电极102上所加载的信号相互干扰，相邻反射电极102之间的间隙尺寸应大于通孔B的尺寸，即反射电极102之间的间隙在衬底基板101上的正投影应覆盖通孔B在衬底基板101上的正投影。
在具体实施时，为进一步提高像素电压保持能力，在本发明实施例提供的上述阵列基板中，如图1至图3所示，还可以包括：与晶体管100的栅极109同层设置且与公共电极106电连接的公共电极线(图中未示出)，以及位于晶体管100的漏极所在层108”与晶体管100的栅极所在层109’之间的栅绝缘层110；
公共电极线(图中未示出)与晶体管100的漏极108相互交叠构成第四电容Cst4。
在本发明实施例提供的上述阵列基板中，通过设置与晶体管100的栅极109同层设置且与公共电极106电连接的公共电极线(图中未示出)，且设置公共电极线(图中未示出)与晶体管100的漏极108相互交叠构成第四电容Cst4，使得第一电容Cst1、第二电容Cst2、第三电容Cst3、第四电容Cst4四者并联，从而更进一步增大了像素内的电容，有效提高了在低频驱动和高分辨率的条件下的像素电压保持能力。
在具体实施时，在本发明实施例提供的上述阵列基板中，为了改善晶体管100漏电，如图1所示，晶体管100的栅极109为双栅极。
在具体实施时，在本发明实施例提供的上述阵列基板中，如图1和图2所示，还可以包括：与晶体管100的栅极109电连接的栅线111，以及与晶体管100的源极108’电连接的数据线112；
公共电极106在衬底基板101上的正投影，覆盖栅线111、数据线112、以及由栅线111和数据线112限定的像素区域在衬底基板101上的正投影。
在本发明实施例提供的上述阵列基板中，通过设置公共电极106在衬底基板101上的正投影，覆盖栅线111、数据线112、以及由栅线111和数据线112限定的像素区域在衬底基板101上的正投影，既可以实现开口率的最大化，又可以避免栅线111上的扫描(Gate)信号和数据线112上的数据(Data)信号对像素电极104上的像素(Pixel)信号的干扰，有利于减小帧与帧之间的亮度差异，降低闪烁不良发生率。
在具体实施时，在本发明实施例提供的上述阵列基板中，反射电极102在衬底基板101上的正投影覆盖像素区域在衬底基板101上的正投影。如此可使得反射电极102将足够的光线反射至像素区域，保证显示亮度。
在具体实施时，在本发明实施例提供的上述阵列基板中，如图4所示，公共电极106可以包括：多个公共子电极106’，该多个公共子电极106’之间相互绝缘；
阵列基板还可以包括：与反射电极102同层设置的多条触控电极线114；
该多条触控电极线114与该多个公共子电极106’一一对应电连接。
即将公共电极106分割为多个公共子电极106’，并将每一公共子电极106’复用为一触控电极113，每一触控电极113与一触控电极线114对应连接，如此无需在显示面板中单独设置触控电极，则可通过复用使得显示面板同时具备显示功能和触控功能，有利于显示面板的轻薄化设计、降低了生产成本。并且，在一些实施例中，公共子电极106’可以包括多个可彼此相连的条状电极，并设置该公共子电极106’通过在其中一个条状电极上打孔的方式实现与一触控电极线114的对应电连接，从而在实现触控功能的基础上，保证了像素的反射开口率最大化。
一般地，在本发明实施例提供的上述阵列基板中，还可以包括触控芯片，用于通过触控电极线114向触控电极113提供触控信号，并根据所接收触控电极113经触控电极线114反馈的信号来识别触控位置。
此外，在本发明实施例提供的上述阵列基板中，因与反射电极102电连接的公共电极106复用为与触控电极线114电连接的触控电极113，故反射电极102与触控电极线114可以是两个独立的部件，或者反射电极102可以复用为触控电极线114，具体可根据实际情况进行选择，在此不做具体限定。
此外，因公共电极106复用为触控电极113，故在一帧时间内，触控功能和显示功能需分阶段进行，基于此，在触控阶段，可通过触控电极线114向公共电极106提供触控信号；在显示阶段，可通过触控电极线114和公共电极线共同向公共电极106提供公共信号。当然，在具体实施时，还可以在触控阶段，通过触控电极线114向公共电极106提供触控信号；在显示阶段，通过公共电极线向公共电极106提供公共信号，在此不做限定。
基于同一发明构思，本发明实施例还提供了一种显示面板，包括本发明实施例提供的上述阵列基板，该显示面板可以为全反射式显示面板或半透半反式显示面板。对于显示面板的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该显示面板的实施可以参见上述阵列基板的实施例，重复之处不再赘述。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述显示面板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相机、导航仪、智能手表、健身腕带、个人数字助理、自助存/取款机等任何具有显示功能的产品或部件。对于显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该显示装置的实施可以参见上述显示面板的实施例，重复之处不再赘述。
本发明实施例提供的一种阵列基板、显示面板及显示装置，包括：衬底基板、依次位于衬底基板上的反射电极、第一绝缘层、像素电极、第二绝缘层和公共电极；其中，公共电极与反射电极之间电连接；公共电极与像素电极相互交叠构成第一电容；像素电极与反射电极相互交叠构成第二电容。通过将公共电极与反射电极之间电连接，并设置公共电极与像素电极相互交叠构成第一电容，以及像素电极与反射电极相互交叠构成第二电容，使得第一电容与第二电容并联，从而增大了像素内的电容，进而提高了在低频驱动和高分辨率的条件下的像素电压保持能力。并且，通过将公共电极复用为触控电极，使得本发明实施例提供的显示面板在成本、轻薄化、触控信噪比和工艺复杂度上具有巨大的优势。
需要说明的是，在本文中，诸如第一和第二之类的关系术语仅仅用来将一个实体或操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (9)

1.一种阵列基板，其特征在于，包括：衬底基板、依次位于所述衬底基板上的反射电极、第一绝缘层、像素电极、第二绝缘层和公共电极，以及依次位于所述反射电极所在层面向所述衬底基板一侧的树脂层和晶体管；其中，
所述公共电极通过贯穿所述第一绝缘层和所述第二绝缘层的通孔与所述反射电极电连接；
所述公共电极与所述像素电极相互交叠构成第一电容；
所述像素电极与所述反射电极相互交叠构成第二电容；
所述晶体管的漏极与所述像素电极电连接；
所述反射电极与所述晶体管的漏极相互交叠构成第三电容。
2.如权利要求1所述的阵列基板，其特征在于，还包括：与所述晶体管的栅极同层设置且与所述公共电极电连接的公共电极线，以及位于所述晶体管的漏极所在层与所述晶体管的栅极所在层之间的栅绝缘层；
所述公共电极线与所述晶体管的漏极相互交叠构成第四电容。
3.如权利要求1所述的阵列基板，其特征在于，所述晶体管的栅极为双栅极。
4.如权利要求1所述的阵列基板，其特征在于，还包括：与所述晶体管的栅极电连接的栅线，以及与所述晶体管的源极电连接的数据线；
所述公共电极在所述衬底基板上的正投影，覆盖所述栅线、所述数据线、以及由所述栅线和所述数据线限定的像素区域在所述衬底基板上的正投影。
5.如权利要求4所述的阵列基板，其特征在于，所述反射电极在所述衬底基板上的正投影覆盖所述像素区域在所述衬底基板上的正投影。
6.如权利要求4所述的阵列基板，其特征在于，所述公共电极与所述反射电极通过贯穿所述第一绝缘层和所述第二绝缘层的通孔电连接；
每一所述像素区域内的所述像素电极设置有过孔，且所述过孔在所述衬底基板上的正投影覆盖所述通孔在所述衬底基板上的正投影。
7.如权利要求1所述的阵列基板，其特征在于，
所述公共电极，包括：多个公共子电极，所述多个公共子电极之间相互绝缘；
所述阵列基板还包括多条触控电极线，与所述反射电极同层设置；
所述多条触控电极线与所述多个公共子电极一一对应电连接。
8.一种显示面板，其特征在于，包括如权利要求1-7任一项所述的阵列基板。
9.一种显示装置，其特征在于，包括如权利要求8所述的显示面板。
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CN110070801B (zh) * 2019-04-30 2023-04-18 武汉天马微电子有限公司 一种显示面板及显示装置
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