CN109256443A

CN109256443A - A kind of semiconductor light-emitting-diode and preparation method of the epitaxial growth using sputtering GaN substrate

Info

Publication number: CN109256443A
Application number: CN201811022396.4A
Authority: CN
Inventors: 孙国峰
Original assignee: Huaian Aucksun Optoelectronics Technology Co Ltd
Current assignee: Huaian Aucksun Optoelectronics Technology Co Ltd
Priority date: 2018-09-03
Filing date: 2018-09-03
Publication date: 2019-01-22
Anticipated expiration: 2038-09-03
Also published as: CN109256443B

Abstract

The invention belongs to technical field of semiconductor device preparation, are related to the semiconductor light-emitting-diode and preparation method of a kind of epitaxial growth using sputtering GaN substrate.A kind of semiconductor light-emitting-diode of the epitaxial growth using sputtering GaN substrate, including Sapphire Substrate, AlN thin film coating, GaN coating, n-GaN grown layer, stress release layer, mqw light emitting layer, electronic barrier layer, p-GaN grown layer and contact layer.The present invention devises a kind of method that the epitaxial growth method using sputtering GaN substrate prepares semiconductor light-emitting-diode, the problem of this method is simple and effective solution above-mentioned substrate lattice mismatch, the semiconductor light-emitting-diode to work well is prepared, and it is time-consuming less, it can effectively promote production capacity.

Description

A kind of semiconductor light-emitting-diode and system of the epitaxial growth using sputtering GaN substrate Preparation Method

Technical field

The invention belongs to technical field of semiconductor device preparation, are related to a kind of epitaxial growth of utilization sputtering GaN substrate Semiconductor light-emitting-diode and preparation method.

Background technique

Gallium nitride (GaN) base semiconductor LED (LED) has become global green with its excellent photoelectric properties and shines Bright main product.The technical industries such as its relevant technologies industry such as substrate, extension, chip and packaging lamp are also rapidly sent out Exhibition.Wherein, sapphire (Al₂O₃) substrate is because of its mature technical level and cheap price, in current GaN base LED industry Occupy very important status.But due to Al₂O₃There are biggish lattice mismatch and thermal mismatching between GaN, result in The GaN film of Sapphire Substrate epitaxial growth has very high penetration dislocation density (about 10⁹cm^-2).Higher dislocation density is led The problems such as having caused the increase of non-radiative recombination probability and carrier leakage to deteriorate.It is main in current commercialization LED large-scale production Graphical sapphire substrate (PSS) is used, and sputter AlN film on its surface to reduce this dislocation density.Nevertheless, AlN film after sputtering and this biggish lattice mismatch is still had between GaN, therefore also need to continue to give birth on AlN film Very thick extension bottom is grown to cover this defect.But in current commercialization metal organic chemical compound vapor deposition (MOCVD) Growth pattern in, quickly growth can not cover lattice mismatch bring defect completely, and entire production process is time-consuming Too long, it is unfavorable to bring to industrial production.

Summary of the invention

It is an object of the present invention to prepare the technical problem faced in LED production process for above-mentioned, a kind of benefit is proposed With the epitaxial growth method of sputtering GaN substrate.It, can obtained by growth pattern of the GaN crystalline quality that this method obtains better than MOCVD Good GaN crystallization is obtained, and carries out saving program growth time when MOCVD growth again.

A kind of epitaxial growth method using sputtering GaN substrate sputters GaN base needed for first obtaining using magnetron sputtering board Then substrate uses MVCVD method, with high-purity N H₃Make nitrogen source, trimethyl gallium (TMGa) or diethyl gallium (TEGa) make gallium source, and three Methyl indium is made indium source (TMIn), and trimethyl aluminium (TMAl) makees silicon source, silane (SiH₄) make n-type dopant, two luxuriant magnesium (Cp₂Mg) make p Type dopant prepares LED component.

Technical solution of the present invention:

A kind of semiconductor light-emitting-diode of the epitaxial growth using sputtering GaN substrate, including Sapphire Substrate, AlN are thin It film coating, GaN coating, n-GaN grown layer, stress release layer, mqw light emitting layer, electronic barrier layer, p-GaN grown layer and connects Contact layer；

The AlN thin film coating with a thickness of 20~50nm；

The GaN coating with a thickness of 300~500nm；

The n-GaN grown layer with a thickness of 1600~1800nm；

The stress release layer with a thickness of 60~90nm；

The mqw light emitting layer with a thickness of 90~200nm；

The electronic barrier layer with a thickness of 15~35nm；

The p-GaN grown layer with a thickness of 20~40nm；

The contact layer with a thickness of 15~35nm.

Utilize the optimum condition of the semiconductor light-emitting-diode of the epitaxial growth of sputtering GaN substrate:

The AlN thin film coating with a thickness of 30~35nm；

The GaN coating with a thickness of 400~450nm；

The n-GaN grown layer with a thickness of 1700-1750nm；

The stress release layer with a thickness of 65~75nm；

The mqw light emitting layer with a thickness of 150~180nm；

The electronic barrier layer with a thickness of 25~35nm；

The p-GaN grown layer with a thickness of 30~35nm；

The contact layer with a thickness of 25~30nm.

A kind of preparation method of the semiconductor light-emitting-diode of the epitaxial growth using sputtering GaN substrate, steps are as follows:

Step 1: it is intracavitary in magnetron sputtering, with N₂As protective gas, Sapphire Substrate is heat-treated；It is heat-treated function Rate is 65~90w, 40~100s of heat treatment time；

Step 2: one layer of AlN thin film coating is plated in Sapphire Substrate after heat treatment；

Step 3: the substrate of step 2 gained AlN thin film coating being put into GaN sputtering storehouse, one layer of GaN coating is plated；

Step 4: the substrate for the GaN coating that step 3 obtains is put into MOCVD；

Step 5: under the premise of step 4, MOCVD temperature being risen to 1040-1060 DEG C, with H₂For carrier gas, SiH₄As doping Agent grows n-GaN grown layer；Wherein, SiH₄Doping be 10¹⁹The order of magnitude；

Step 6: under the premise of step 5, with N₂For carrier gas, TEGa is the growth source Ga, and the source TMIn is dopant, 800~ Growth stress releasing layer under the conditions of 850 DEG C of temperature；Grown quantum trap luminescent layer under the conditions of 700~750 DEG C of temperature；

Step 7: under the premise of step 6, MOCVD temperature is adjusted, with Cp₂The source Mg, TMIn is that dopant grows electronic blocking Layer, P-GaN grown layer, contact layer；Growth temperature rises to 830~850 DEG C first, grows electronic barrier layer；Then, it is warming up to 950~1000 DEG C, grow p-GaN grown layer；Finally, being down to 700~720 DEG C, contact layer is grown.

Beneficial effects of the present invention: present invention innovation is to devise a kind of epitaxial growth side using sputtering GaN substrate The problem of method that method prepares semiconductor light-emitting-diode, this method is simple and effective solution above-mentioned substrate lattice mismatch, The semiconductor light-emitting-diode to work well is prepared, and time-consuming less, can effectively promote production capacity.

Specific embodiment

Below in conjunction with technical solution, a specific embodiment of the invention is further illustrated.

Embodiment 1

A kind of epitaxial growth method using sputtering GaN substrate, comprises the following steps that:

Step 1: PSS substrate being heat-treated with 80w power using magnetron sputtering board, time 90s；

Step 2: being plated using the AlN film for plating a layer thickness 35nm on magnetron sputtering board PSS substrate after heat treatment Layer；

Step 3: one layer of GaN coating is plated on AlN thin film coating surface using magnetron sputtering board, with a thickness of 450nm；

Step 4: above-mentioned GaN coating substrate being put into MOCVD growth chamber, temperature rises to 1060 DEG C, H₂As load Gas, pressure are set as 200Pa, and TMGa is that the growth source Ga is grown 30min, obtained n-GaN with 3.7 micro- ms/h of growth rate Grown layer, thickness are about 1780nm；

After the completion of the growth of step 5:n-GaN grown layer, temperature is down to 800 DEG C and 750 DEG C respectively, and carrier gas is cut to N₂, TEGa To grow the source Ga, growth stress releasing layer and mqw light emitting layer, it is 10 that mqw light emitting layer, which recycles number,；Wherein stress is released Putting layer growth thickness is 70nm, and mqw light emitting layer is with a thickness of 150nm；

Step 6: after the growth based on step 5, temperature rises to 835 DEG C, and TMGa is the growth source Ga, Cp₂Mg and TMAl is that dopant grows electronic barrier layer；Gained electronic barrier layer is with a thickness of 30nm；

Step 7: after the growth based on step 6, temperature rises to 1000 DEG C, is the growth source Ga, Cp with TMGa₂Mg is Dopant grows p-GaN grown layer, with a thickness of 28nm；

Step 8: after the growth based on step 7, temperature is down to 720 DEG C, and TEGa is the growth source Ga, Cp₂Mg and TMIn Contact layer is grown for dopant, the time is about 90s, and contact layer thickness is about 30nm.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution The range of scheme.

Claims

1. a semiconductor light-emitting diode utilizing the epitaxial growth of sputtering GaN substrate, is characterized in that, the described semiconductor light-emitting diode utilizing the epitaxial growth of sputtering GaN substrate comprises sapphire substrate, AlN thin film coating, GaN coating, n-GaN growth layer, stress release layer, quantum well light-emitting layer, electron blocking layer, p-GaN growth layer and contact layer;

The thickness of the AlN thin film coating is 20-50 nm;

The thickness of the GaN coating is 300-500 nm;

The thickness of the n-GaN growth layer is 1600-1800 nm;

The thickness of the stress release layer is 60-90 nm;

The thickness of the quantum well light-emitting layer is 90-200 nm;

The thickness of the electron blocking layer is 15-35 nm;

The thickness of the p-GaN growth layer is 20-40 nm;

The thickness of the contact layer is 15-35 nm.

2. The epitaxially grown semiconductor light-emitting diode using sputtered GaN substrate according to claim 1, characterized in that,

The thickness of the AlN thin film coating is 30-35 nm;

The thickness of the GaN coating is 400-450 nm;

The thickness of the n-GaN growth layer is 1700-1750nm;

The thickness of the stress release layer is 65-75 nm;

The thickness of the quantum well light-emitting layer is 150-180 nm;

The thickness of the electron blocking layer is 25-35 nm;

The thickness of the p-GaN growth layer is 30-35 nm;

The thickness of the contact layer is 25-30 nm.

3. a preparation method of the semiconductor light-emitting diode utilizing the epitaxial growth of sputtering GaN substrate, is characterized in that, step is as follows:

Step 1: in the magnetron sputtering chamber, use N ₂ as the protective gas to heat the sapphire substrate; the heat treatment power is 65-90w, and the heat-treatment time is 40-100s;

Step 2: Coating a layer of AlN thin film coating on the heat-treated sapphire substrate;

Step 3: put the AlN thin film coating substrate obtained in Step 2 into the GaN sputtering chamber, and coat a layer of GaN coating;

Step 4: put the substrate of the GaN coating obtained in step 3 into MOCVD;

Step 5: On the premise of Step 4, increase the MOCVD temperature to 1040-1060°C, use H ₂ as a carrier gas, and SiH ₄ as a dopant to grow an n-GaN growth layer; wherein, the doping amount of SiH ₄ is 10 ¹⁹ orders of magnitude;

Step 6: On the premise of Step 5, using N ₂ as the carrier gas, TEGa as the growth Ga source, and the TMIn source as the dopant, the stress release layer is grown at a temperature of 800-850 °C; at a temperature of 700-750 °C grow quantum well light-emitting layer;

Step 7: Under the premise of Step 6, adjust the MOCVD temperature, and use Cp ₂ Mg and TMIn sources as dopants to grow the electron blocking layer, the P-GaN growth layer, and the contact layer; the growth temperature condition is first raised to 830-850 ° C, and the growth electron blocking layer; then, the temperature is raised to 950-1000° C. to grow the p-GaN growth layer; finally, the temperature is lowered to 700-720° C. to grow the contact layer.