CN109244030A - A kind of multiple-function chip substrate pedestal for epitaxial growth device - Google Patents
A kind of multiple-function chip substrate pedestal for epitaxial growth device Download PDFInfo
- Publication number
- CN109244030A CN109244030A CN201810741832.7A CN201810741832A CN109244030A CN 109244030 A CN109244030 A CN 109244030A CN 201810741832 A CN201810741832 A CN 201810741832A CN 109244030 A CN109244030 A CN 109244030A
- Authority
- CN
- China
- Prior art keywords
- base body
- pedestal
- outskirt
- limited block
- inner region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to semiconductor manufacturing facility technical fields, it is desirable to provide a kind of multiple-function chip substrate pedestal for epitaxial growth device.The pedestal, including Base body, Base body are disk；Base body upper surface is divided into an inner region and at least three outskirts, and inner region is rounded to be located at Base body center, and outskirt is rounded, and two adjacent outskirts are tangent to each other and tangent with Base body outer rim；On inner region circumference and each outskirt circumference other than inner region and outskirt overlapping region, it is respectively symmetrically equipped with several internal limited blocks and external limited block；Base body lower surface is equipped with several grooves and supporting element, and supporting element includes the support leg equal with number of recesses, and support leg protrudes into groove, to realize fixation of the supporting element in Base body.The quality of the advantages of remaining the good thickness of one chip epitaxial growth device grown epitaxial layer and resistivity evenness using the processing method that this product carries out, the epitaxial layer grown is better than multiple-piece epitaxial growth device.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical fields, and in particular to a kind of for the multi-functional of epitaxial growth device
Wafer substrates pedestal.
Background technique
Currently, in general having a process cavity as the epitaxial growth device for growing epitaxial film on substrate
The rotatable pedestal for support substrate of room and setting in the process chamber, in this device, reaction gas is parallel
In being introduced into substrate on the direction of substrate, so as to will be on outer layer growth substrate on the base.One chip growing epitaxial silicon
Device has become silicon epitaxial wafer production in the world due to the epitaxial growth effect of its major diameter extension working ability and high quality
Developing mainstream.The epitaxial growth of domestic epitaxial device energy compatible diameter 150mm and 200mm at present, but need replacing difference
Pedestal, and epitaxial device replacement pedestal it is very troublesome, take time and effort and be easy graphite base is caused to damage.
With the progress of semiconductor technology, industry is higher and higher using the requirement to epitaxial wafer, increases epitaxial wafer size
As inevitable development trend, Chinese epitaxial wafer market will be transitioned into 300mm by 200mm.In view of later 200mm epitaxial wafer by
Step is eliminated, and required 200mm pedestal may also be phased out, and since the price of pedestal is more expensive, in order to reduce 200mm base
Seat amount of purchase, need with the pedestal of 300mm come instead of using.
And domestic market is in a short time to 200mm epitaxial wafer there are also larger demand, in the cavity of growth 300mm epitaxial wafer
In, although being also able to achieve the processing to 200mm epitaxial wafer using 300mm pedestal, since the grower every time can only be to list
Piece is processed, and certainly will will cause production capacity waste.
Summary of the invention
The technical problem to be solved by the present invention is to overcome deficiency in the prior art, provide a kind of for epitaxial growth dress
The multiple-function chip substrate pedestal set.
In order to solve the technical problem, solution of the invention is:
A kind of multiple-function chip substrate pedestal for epitaxial growth device is provided, including Base body, Base body are
For placing the disk of Circular wafer substrate；Base body upper surface is divided into an inner region and at least three outskirts, inner region are in
Circle is located at Base body center, and outskirt is rounded, and two adjacent outskirts are tangent to each other and tangent with Base body outer rim；
On inner region circumference and each outskirt circumference other than inner region and outskirt overlapping region, be respectively symmetrically equipped with several internal limited blocks with
External limited block；Base body lower surface be equipped with it is several about Base body central symmetry, along circumference in equal parts array arrangement it is recessed
Slot and supporting element, supporting element include the support leg equal with number of recesses, and support leg protrudes into groove, to realize supporting element
Fixation in Base body.
As an improvement Base body diameter is greater than 435mm；Inner region diameter is 300mm, and outskirt diameter is 200mm.
As an improvement internal limited block is at least 3.
As an improvement the external limited block on each outskirt is at least 2, and external limited block spacing is less than
200mm。
As an improvement external limited block and internal limited block height are no more than the thickness of wafer substrates.
As an improvement internal limited block and external limited block are cylindrical, triangle or rectangle.
As an improvement number of recesses is more than or equal to 3；Depth of groove is less than Base body thickness.
As an improvement supporting element is quartz supports part.
Compared with prior art, the beneficial effects of the present invention are:
1, the present invention is also able to achieve while can support monolithic 300mm diameter substrate to 3 200mm diameter substrates
Support, and when switching substrate dimension, without replacement pedestal.
2, it due to using 300mm one chip epitaxial growth device that can process simultaneously to 3 200mm epitaxial wafers, uses
The present invention is equivalent to production capacity and is promoted to original 3 times, and this processing method remains outside the growth of one chip epitaxial growth device
The quality of the advantages of prolonging the good thickness of layer and resistivity evenness, the epitaxial layer grown is better than multiple-piece epitaxial growth device.
Detailed description of the invention
Fig. 1 is top view when being placed with three pieces diameter 200mm substrate in the embodiment of the present invention 1 in Base body；
Fig. 2 is the A-A sectional view of Fig. 1；
Fig. 3 is bottom view when pedestal in the embodiment of the present invention 1 removes supporting element；
Fig. 4 is the top view when pedestal in the embodiment of the present invention 1 places a piece of diameter 300mm substrate.
Wherein: 11- Base body；Limited block outside 12-；13- groove；Limited block inside 14-；20- supporting element；21- branch
Support foot；3- substrate.
Specific embodiment
Embodiment below can make the technical staff of this professional skill field more fully understand the present invention, but not to appoint
Where formula limitation is of the invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are elaborated in following description given in order to fully understand this hair
It is bright, but the present invention can also be implemented using other than the one described here other way, therefore the present invention is not by following
The limitation of disclosed specific embodiment.
The present invention includes Base body 11, and Base body 11 is to be greater than 435mm for placing the diameter of Circular wafer substrate
Disk.11 upper surface of Base body is divided into an inner region and at least three outskirts, and the rounded diameter of inner region is that 300mm is located at base
11 center of seat main body.Outskirt is rounded, diameter 200mm, and two adjacent outskirts are tangent to each other and and outside Base body 11
Edge is tangent.On inner region circumference and each outskirt circumference other than inner region and outskirt overlapping region, it is respectively symmetrically equipped with several inside
Limited block 14 and external limited block 12, the external limited block spacing on each outskirt is less than 200mm.External limited block 12 and inside
14 height of limited block is no more than the thickness of wafer substrates.11 lower surface of Base body is equipped with several about Base body center pair
Claim, along the groove 13 and supporting element 20 of circumference in equal parts array arrangement, 13 quantity of groove is more than or equal to 3.13 depth of groove is small
In 11 thickness of Base body.Supporting element 20 is quartz material, and supporting element 20 includes the support leg equal with 13 quantity of groove, branch
Support foot protrudes into groove 13, to realize fixation of the supporting element 30 in Base body 11.Supporting element 20 is driven by other component to be revolved
Turn, Base body 11 is rotated with supporting element 20.
Embodiment 1 as shown in Figure 1, external limited block 12 are cylindrical protrusions, the external limited block 12 of 2 of each outskirt
It is tangent with substrate 1a, 1b and 1c of 200mm diameter respectively.When Base body 11 rotates, external limited block 12 is to substrate 3
Apply the power towards 11 center of Base body, to offset because of the centrifugation that substrate 1a (1b and 1c) is generated with the rotation of Base body 11
Power, guarantee substrate 3 is without departing from its original position, in order to avoid uneven heating even substrate 1a (1b and 1c) is caused to be detached from Base body
11。
In the present embodiment, 11 lower surface of Base body be provided with 3 grooves, 13,3 grooves 13 bottom be plane and
In the same plane, i.e., groove depth is identical.The upper surface of support leg 21 is also plane, and the upper surface of three support legs 21 is same
In plane.Groove 13 and support leg 21 need accurate fitting, guarantee 11 uniform force of Base body, balance, i.e. guarantee 3 moment of substrate
It keeps horizontal, substrate 1a (1b and 1c) thermally equivalent and is contacted with reaction gas, realize uniform epitaxial growth.
In the present embodiment, when carrying out pick-and-place piece to the substrate 1a of diameter 200mm (1b and 1c) before and after epitaxial growth,
With substrate 1a citing: first being adjusted the direction substrate 1a to reaction chamber by rotating basis main body 11 and imported and exported, machinery can be passed through
Hand carries it.After the carrying for completing substrate 1a, Base body is rotated clockwise 120 °, just can be carried out removing for substrate 1b
Fortune.After the carrying for completing substrate 1b, Base body is rotated clockwise 120 °, just can be carried out the carrying of substrate 1c.It completes all
The carrying of substrate.(first carrying substrate 1c can also be rotated counterclockwise, then carry substrate 1b)
In the present embodiment, referring to fig. 4, when carrying out the epitaxial growth of 300mm diameter substrate 3, it is only necessary to put substrate 3
The center for setting Base body 11, when Base body 11 rotates, substrate 3 will not have the centrifugal force of skewed popularity, i.e., not
The opposite sliding with Base body 11 can occur.For the sake of assurance, three raised inside limits can be set in Base body 11
Position block 14, is fixed on substrate 3 in Base body.Internal limited block 14 does not influence the placement of diameter 200mm substrate.
Although the present invention has been disclosed in the preferred embodiments as above, present invention is not limited to this.Any art technology
Personnel can make various changes or modifications, therefore protection scope of the present invention is answered without departing from the spirit and scope of the present invention
When being defined by the scope defined by the claims..
Claims (8)
1. a kind of multiple-function chip substrate pedestal for epitaxial growth device, including Base body, the Base body is to use
In the disk for placing Circular wafer substrate；It is characterized in that, the Base body upper surface is divided into an inner region and at least three
A outskirt, the inner region it is rounded be located at Base body center, the outskirt is rounded, two adjacent outskirts it is tangent to each other and
It is tangent with Base body outer rim；It is right respectively on inner region circumference and each outskirt circumference other than inner region and outskirt overlapping region
Claim to be equipped with several internal limited blocks and external limited block；The Base body lower surface is equipped with several about Base body center pair
Claiming, along the groove and supporting element of circumference in equal parts array arrangement, the supporting element includes the support leg equal with number of recesses,
The support leg protrudes into the groove, to realize fixation of the supporting element in Base body.
2. pedestal as described in claim 1, which is characterized in that the Base body diameter is greater than 435mm；The inner region diameter
For 300mm, the outskirt diameter is 200mm.
3. pedestal as described in claim 1, which is characterized in that the internal limited block is at least 3.
4. pedestal as described in claim 1, which is characterized in that the external limited block on each outskirt is at least 2.
5. pedestal as described in claim 1, which is characterized in that the external limited block and internal limited block height are no more than crystalline substance
The thickness of piece substrate.
6. pedestal as described in claim 1, which is characterized in that the internal limited block and external limited block are cylinder, three
Angular or rectangle.
7. pedestal as described in claim 1, which is characterized in that the number of recesses is more than or equal to 3；The depth of groove is small
In Base body thickness.
8. pedestal as described in claim 1, which is characterized in that the supporting element is quartz supports part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810741832.7A CN109244030B (en) | 2018-07-09 | 2018-07-09 | Multifunctional wafer substrate base for epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810741832.7A CN109244030B (en) | 2018-07-09 | 2018-07-09 | Multifunctional wafer substrate base for epitaxial growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109244030A true CN109244030A (en) | 2019-01-18 |
| CN109244030B CN109244030B (en) | 2024-08-20 |
Family
ID=65071757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810741832.7A Active CN109244030B (en) | 2018-07-09 | 2018-07-09 | Multifunctional wafer substrate base for epitaxial growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109244030B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471976A (en) * | 2020-05-21 | 2020-07-31 | 中国科学院半导体研究所 | Substrate holder |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| KR20150098432A (en) * | 2014-02-20 | 2015-08-28 | 서울바이오시스 주식회사 | Wafer carrier |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| CN105009273A (en) * | 2013-03-27 | 2015-10-28 | 应用材料公司 | Susceptor support portion and epitaxial growth apparatus including susceptor support portion |
| CN206441712U (en) * | 2017-01-13 | 2017-08-25 | 北京世纪金光半导体有限公司 | A kind of novel graphite boat of SiC wafers metal electrode annealing furnace |
| US20170345704A1 (en) * | 2016-05-24 | 2017-11-30 | Mitsubishi Electric Corporation | Wafer tray |
| CN208507647U (en) * | 2018-07-09 | 2019-02-15 | 浙江求是半导体设备有限公司 | Multiple-function chip substrate pedestal for epitaxial growth device |
-
2018
- 2018-07-09 CN CN201810741832.7A patent/CN109244030B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105009273A (en) * | 2013-03-27 | 2015-10-28 | 应用材料公司 | Susceptor support portion and epitaxial growth apparatus including susceptor support portion |
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| KR20150098432A (en) * | 2014-02-20 | 2015-08-28 | 서울바이오시스 주식회사 | Wafer carrier |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| US20170345704A1 (en) * | 2016-05-24 | 2017-11-30 | Mitsubishi Electric Corporation | Wafer tray |
| CN206441712U (en) * | 2017-01-13 | 2017-08-25 | 北京世纪金光半导体有限公司 | A kind of novel graphite boat of SiC wafers metal electrode annealing furnace |
| CN208507647U (en) * | 2018-07-09 | 2019-02-15 | 浙江求是半导体设备有限公司 | Multiple-function chip substrate pedestal for epitaxial growth device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471976A (en) * | 2020-05-21 | 2020-07-31 | 中国科学院半导体研究所 | Substrate holder |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109244030B (en) | 2024-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5158093B2 (en) | Vapor growth susceptor and vapor growth apparatus | |
| TWI584405B (en) | Wafer tray | |
| US9022392B2 (en) | Chuck and semiconductor process using the same | |
| JP5436043B2 (en) | Vapor growth equipment | |
| CN105810625B (en) | Wafer tray | |
| JP4300523B2 (en) | Epitaxial growth equipment | |
| JP2004327761A (en) | Susceptor for epitaxial growth | |
| CN109244030A (en) | A kind of multiple-function chip substrate pedestal for epitaxial growth device | |
| CN208507647U (en) | Multiple-function chip substrate pedestal for epitaxial growth device | |
| US8987109B2 (en) | Method for manufacturing bonded wafer and bonded SOI wafer | |
| JP2024133383A (en) | Susceptor | |
| JP2018107289A (en) | Susceptor, vapor phase growth apparatus, and vapor phase growth method | |
| CN211848135U (en) | Tray | |
| JP2001010894A (en) | Susceptor for crystal growth and crystal growth device, and epitaxial wafer and its production | |
| JP5626163B2 (en) | Epitaxial growth equipment | |
| KR102727620B1 (en) | Substrate Support Member | |
| CN116497344A (en) | Susceptor support structure and epitaxial growth apparatus | |
| CN104576484A (en) | Tray structure in semiconductor equipment | |
| KR101339580B1 (en) | Manufacturing method for epitaxial soi wafer manufacturing apparatus | |
| TW201725620A (en) | Heat treatment vessel for single-crystal silicon carbide substrate and etching method | |
| JP6732483B2 (en) | Substrate holding member and vapor phase growth apparatus | |
| TWI735361B (en) | A wafer alignment method and a semiconductor manufacturing apparatus | |
| CN205508773U (en) | Wafer metal plating layer structure and corresponding photoetching board and wafer anchor clamps thereof | |
| CN119530959A (en) | Susceptor and apparatus for epitaxial growth of wafers | |
| JP2013105924A (en) | Manufacturing method of silicon epitaxial wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190110 Address after: 311100 Zhejiang Province Hangzhou Yuhang District East Lake Street Qianjiang Economic Development Zone, No. 96 Longchuanwu Road, Building 2, 3 Floors Applicant after: ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT Co.,Ltd. Applicant after: ZHEJIANG JINGSHENG M&E Co.,Ltd. Address before: 312300 No. 218 Tongjiang West Road, Shangyu District, Shaoxing, Zhejiang. Applicant before: ZHEJIANG JINGSHENG M&E Co.,Ltd. |
|
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231109 Address after: Room 103, Building 1, No. 500 Shunda Road, Yuhang Economic and Technological Development Zone, Linping District, Hangzhou City, Zhejiang Province, 311103 Applicant after: Zhejiang Qiushi Chuangxin Semiconductor Equipment Co.,Ltd. Applicant after: ZHEJIANG JINGSHENG M&E Co.,Ltd. Address before: 311100 Zhejiang Province Hangzhou Yuhang District East Lake Street Qianjiang Economic Development Zone, No. 96 Longchuanwu Road, Building 2, 3 Floors Applicant before: ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT Co.,Ltd. Applicant before: ZHEJIANG JINGSHENG M&E Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |