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CN109167575A - A kind of power amplifier of wide band high-gain flatness - Google Patents

A kind of power amplifier of wide band high-gain flatness Download PDF

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Publication number
CN109167575A
CN109167575A CN201811090326.2A CN201811090326A CN109167575A CN 109167575 A CN109167575 A CN 109167575A CN 201811090326 A CN201811090326 A CN 201811090326A CN 109167575 A CN109167575 A CN 109167575A
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China
Prior art keywords
power amplifier
amplifier
matching network
gain
coupling factor
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Pending
Application number
CN201811090326.2A
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Chinese (zh)
Inventor
李巍
龚杰
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Fudan University
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Fudan University
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Priority to CN201811090326.2A priority Critical patent/CN109167575A/en
Publication of CN109167575A publication Critical patent/CN109167575A/en
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45264—Complementary cross coupled types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Microwave Amplifiers (AREA)

Abstract

本发明属于射频微波集成电路设计领域，具体为一种宽带高增益平坦度的功率放大器。该功率放大器主要包括：一个由高耦合因子变压器和电容电阻组成的输入匹配网络；一个带中和电容的差分共源驱动放大器；一个高耦合因子变压器组成的级间匹配网络；一个用于功率放大的带中和电容的差分共源功率放大器；一个由高耦合因子变压器和负载电容组成的输出匹配网络。该功率放大器在三级匹配网络中均采用高耦合因子变压器，通过三级匹配增益波动相互补偿的方式来减小宽带的带内增益波动，有效解决了传统宽带功率放大器由于级间匹配带内波动较大导致的增益平坦度较差的问题，同时也提高了增益。相比已有的技术，本发明可以在实现高增益的同时显著提高宽带功率放大器的增益平坦度。

The invention belongs to the field of radio frequency microwave integrated circuit design, and in particular relates to a power amplifier with broadband and high gain flatness. The power amplifier mainly includes: an input matching network composed of high coupling factor transformers and capacitors and resistors; a differential common source driver amplifier with neutralizing capacitors; an interstage matching network composed of high coupling factor transformers; a power amplifier A differential common-source power amplifier with neutralizing capacitors; an output matching network consisting of a high coupling factor transformer and load capacitors. The power amplifier adopts a high coupling factor transformer in the three-stage matching network, and the in-band gain fluctuation of the broadband is reduced by the mutual compensation of the three-stage matching gain fluctuation, which effectively solves the in-band fluctuation of the traditional broadband power amplifier due to the inter-stage matching. Larger results in poorer gain flatness, while also increasing the gain. Compared with the prior art, the present invention can significantly improve the gain flatness of the broadband power amplifier while achieving high gain.

Description

A kind of power amplifier of wide band high-gain flatness
Technical field
The invention belongs to frequency microwave technical field of integrated circuits, and in particular to it is multi-functional that one kind is applied to radio frequency phased array The wide band high-gain flatness power amplifier of transmitting-receiving subassembly, can be used in the phased array systems such as wireless telecommunications, radar detection.
Background technique
In recent years, being constantly progressive with CMOS technology uses CMOS technology to realize power amplifier with its low cost, height The advantages that integrated level, attracts the attention of more and more researchers.High-speed data communication, phased-array radar and software radio etc. In system, bandwidth to power amplifier and very high requirement is proposed with interior gain flatness.But due to CMOS technology power supply Voltage is low, input and output impedance is very big with the variation of frequency, therefore realizes that high gain flatness is filled under super large bandwidth Challenge.In order to solve the above problem, how domestic and foreign scholars improves gain flatness and expands if being directed in wideband power amplifer Research.
Wideband power amplifer mainly includes distributed power amplifier, using high-order inductance capacitance net mate now Power amplifier and be based on the matched power amplifier of transformer.Wherein distributed power amplifier is carried out using transmission line Input and output matching, consumes a large amount of areas and power consumption while realizing super large bandwidth；The power of inductance capacitance high-order net mate Amplifier then consumes a large amount of areas, and single ended input output is also difficult to realize high-power output；And use transformer matched Wideband power amplifer with its lesser area, may be implemented it is single-ended with differential conversion and without grade spacing value capacitor the advantages that It is widely adopted.But it uses be only confined in each matching network progress list when design of transformer wideband power amplifer at present Solely design, therefore the superposition of multiple matching network gain passband fluctuations often brings poor gain flatness, how to realize The preferable gain flatness of wideband power amplifer is also the hot spot of current research.
Summary of the invention
The purpose of the present invention is to provide the wideband power amplifers under a kind of super large bandwidth with High Gain Flatness PA.
Wideband power amplifer proposed by the present invention, it is between input, grade and defeated using the matching network based on transformer All led to while every level-one realizes matched well using transformer, the matching network of capacitor and resistance in matching network out It crosses between output removes compensated stage with input matching network and matches the larger passband fluctuation of bring, so that entire broadband power amplification Device has good gain flatness.
Wide band high-gain flatness power amplifier proposed by the present invention, circuit structure as shown in Figure 1, comprising:
(1) input matching network being made of high coupling factor transformer and capacitance resistance；
The input matching network, by the way of transformer coupled, including the transformer TF with high coupling factor1To expand band Width, with capacitor C1Carry out resonance matching point, and is used to reduce RC simultaneously in the appropriate valued resistor of common-source amplifier input terminal parallel connection The quality factor of networking network, to realize good input matching；
(2) difference common source driving amplifiers with neutralizing capacitance；
The driving amplifier, by driving common source amplifier tube CD1、CD2With neutralizing capacitance CN1It forms, wherein neutralizing capacitance CN1It is used to The gain for increasing driving amplifier is isolated with direction, improves the stability of power amplifier；
The inter-stage matching network of (3) high coupling factor transformers composition；
The intervalve matching circuit, the high coupling factor transformer TF for being 2:1 by transformation ratio2With capacitor C2Composition；Match circuit The high-quality-factor network on the right, so that bringing biggish passband fluctuation while interstage matched biggish bandwidth；
(4) one are used for the difference common-source power amplifier with neutralizing capacitance of power amplification；
The difference common-source power amplifier is by common source amplifier tube MP1、MP2With neutralizing capacitance CN2Composition, principle and drive amplification Device is identical, and 2 times having a size of driving amplifier of amplifier tube, neutralizing capacitance value is also twice of driving amplifier, thus providing The stability of power amplifier is improved while higher-wattage exports；
(5) output matching networks being made of high coupling factor transformer and load capacitance；
By the transformer TF of high coupling factor3With capacitor C2The matching network of composition, so that output via net loss is minimum, and in Between frequency band loss be less than both sides, so as to compensate the biggish passband fluctuation of interstage matched, and provide in entire frequency band larger The output of power.
In the present invention, the difference common source amplifying circuit with neutralizing capacitance determines the gain and output work of power amplifier Rate, while also assuring the stability of the power amplifier.Between input, grade based on transformer, output matching network exists While every level-one realizes preferably matching, the design of multistage matching network is organically combined into an entirety, matching network is passed through Design allow the biggish passband fluctuation of interstage matched be entered matching and output matching compensated so that whole A wideband power amplifer realizes good gain flatness under super large bandwidth.
Technical characterstic of the invention and the utility model has the advantages that
(1) difference channel make full use of transformer can single double conversion the characteristics of, improve the output power of power amplifier；
(2) use of cross-neutralization capacitor increases substantially the reverse isolation of power amplifier, improves the steady of power amplifier It is qualitative；
(3) matching network based on transformer reduces the area of matching network, while multistage matching network gain is mutual The it is proposed of compensation substantially increases the gain flatness of power amplifier；
(4) compared to traditional method for separately designing multistage matching network, the power amplifier is between 7.5-18.5GHz The gain of 22dB and the gain fluctuation of 1dB are realized, which is much better than traditional three dB bandwidth.
Detailed description of the invention
The structural schematic diagram of broadband high flat degree power amplifier Fig. 1 of the invention.
The equivalent output matching network of Fig. 2.
The equivalent inter-stage matching network of Fig. 3.
Fig. 4 input, between grade, output matching network loss.
The S parameter curve of Fig. 5 power amplifier.
The output power and efficiency of Fig. 6 power amplifier.
Specific embodiment
It is as shown in Figure 1 wide band high-gain flatness power amplifier of the invention.
The single-ended signal of ingoing power amplifier is converted into difference double-end signal, two-way letter into input matching network excessively first Number amplitude it is equal, phase phase difference 180 degree, while inputting matching high-order network design and being that two pole angulars are overlapped so that Intermediate loss ratio two sides are small, to compensate the biggish passband fluctuation of interstage matched, Fig. 4 (a) is to input matching loss.
Then this two paths of differential signals is sent in driving amplifier by common source amplifier tube MD1And MD2Amplification, so that Rear end power amplifier can be pushed after the loss that its output power passes through inter-stage matching network, while promoting the main broadband function The gain of rate amplifier.
Power amplifier, pole are transferred to by inter-stage matching network by the two paths of differential signals that driving amplifier amplifies later Between matching network equivalent-circuit model it is as shown in Figure 2.Ro,dWith Co,dParallel network be driving amplifier output impedance, Rs,p With CpSeries network be power amplifier input impedance, TF2For transformer used in interstage matched, which can be waited Effect is by transformer coupled RC parallel network, and the Q value of second level RC parallel network is higher, therefore the high-order pair net Two pole angulars of network are as follows:
(1)
Wherein, k is the coupling factor of transformer,For the resonance angular frequency of unilateral LC resonance network.As seen from formula (1), it adopts Biggish bandwidth may be implemented with the transformer of high coupling factor, while introducing biggish passband fluctuation, if Fig. 4 (b) is between grade The loss of matching network.
Following two paths of differential signals is sent in power amplifier by large scale common source amplifier tube MP1And MP2Amplification, from And make the output power of power amplifier by exporting the requirement that can satisfy system to output power after network.
Finally, two paths of differential signals is converted into single-ended signal by double-end signal by output matching network, thus after passing through 50 ohm antennas are held to export.Fig. 3 show the equivalent circuit diagram of output matching network, wherein RoptWith CoptParallel network be logical The best power matching impedance that overload migrates, RLTo export 50 ohm antenna impedances, CLThat specially adds is used to optimize The capacitor of distribution network, TF3For for exporting matched transformer.Since the Q value of the right and left RC parallel network is all lower, Two pole angulars for designing the seasonal high-order matching network are overlapped, so that realizing good output matching in whole bandwidth While, output matching network can be used to compensate the loss of interpolar matching network, and Fig. 4 (c) is output matching loss.
S parameter curve post-layout simulation results exhibit such as Fig. 5 institute of wide band high-gain flatness power amplifier in above embodiments Show.From the point of view of Fig. 5 result, compared to traditional wideband power amplifer, the present invention is in the good input and output matching of guarantee and instead In the case where isolation, the gain flatness of wideband power amplifer is optimized to the passband fluctuation for only there was only 1dB.Power The output power and efficiency post-layout simulation results exhibit of amplifier are as shown in Figure 6.From the point of view of Fig. 6 result, wide band high-gain of the invention is flat Smooth degree power amplifier also only only has 1.5dB.Above embodiments demonstrate correctness and actual effect of the invention.

Claims (1)

1.一种宽带高增益平坦度的功率放大器，其特征在于，包括：1. a kind of power amplifier of broadband high gain flatness, is characterized in that, comprises: （1）一个由高耦合因子变压器和电容电阻组成的输入匹配网络；(1) An input matching network consisting of a high coupling factor transformer and capacitor resistors; 所述输入匹配网络，采用变压器耦合的方式，包括用高耦合因子的变压器TF1来拓展带宽，用电容C1来调谐匹配点，以及在共源放大器输入端并联的适当阻值电阻用来降低RC并联网络的品质因子，从而实现好的输入匹配；The input matching network adopts a transformer coupling method, including using a high coupling factor transformer TF 1 to expand the bandwidth, using a capacitor C 1 to tune the matching point, and connecting an appropriate resistance value resistor in parallel at the input end of the common source amplifier to reduce the bandwidth. The quality factor of the RC parallel network to achieve good input matching; （2）一个带中和电容的差分共源驱动放大器；(2) A differential common-source driver amplifier with neutralizing capacitors; 所述驱动放大器，由驱动共源放大管CD1、CD2和中和电容CN1组成，其中中和电容CN1用来增加驱动放大器的增益与方向隔离，提高功率放大器的稳定性；The driving amplifier is composed of driving common-source amplifier tubes C D1 , C D2 and neutralizing capacitor C N1 , wherein the neutralizing capacitor C N1 is used to increase the gain and direction isolation of the driving amplifier and improve the stability of the power amplifier; （3）一个高耦合因子变压器组成的级间匹配网络；(3) An inter-stage matching network composed of a high coupling factor transformer; 所述级间匹配电路，由变压比为2：1的高耦合因子变压器TF2和电容C2组成；匹配电路右边的高品质因子网络，使得级间匹配较大的带宽的同时带来较大的带内波动；The inter-stage matching circuit is composed of a high-coupling factor transformer TF 2 with a transformation ratio of 2:1 and a capacitor C 2 ; the high-quality factor network on the right side of the matching circuit enables the inter-stage matching to have a larger bandwidth and at the same time bring more benefits. large in-band fluctuations; （4）一个用于功率放大的带中和电容的差分共源功率放大器；(4) A differential common-source power amplifier with neutralizing capacitor for power amplification; 所述差分共源功率放大器由共源放大管MP1、MP2和中和电容CN2组成，其原理与驱动放大器相同，放大管尺寸为驱动放大器的2倍，中和电容值也是驱动放大器的两倍，从而在提供较高功率输出的同时提高功率放大器的稳定性；The differential common-source power amplifier is composed of common-source amplifier tubes M P1 , M P2 and neutralizing capacitor C N2 . twice as much, thereby increasing the stability of the power amplifier while providing higher power output; （5）一个由高耦合因子变压器和负载电容组成的输出匹配网络；(5) An output matching network composed of a high coupling factor transformer and a load capacitor; 由高耦合因子的变压器TF3和电容C2组成的匹配网络，使得输出网络损耗最小，并且中间频带损耗小于两边，从而补偿级间匹配较大的带内波动，并且在整个频带提供较大功率的输出。The matching network composed of the high coupling factor transformer TF 3 and capacitor C 2 makes the output network loss minimal, and the mid-band loss is smaller than both sides, thereby compensating for the large in-band fluctuation of the inter-stage matching and providing large power in the entire frequency band Output.
CN201811090326.2A 2018-09-18 2018-09-18 A kind of power amplifier of wide band high-gain flatness Pending CN109167575A (en)

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CN109871580A (en) * 2019-01-10 2019-06-11 杭州电子科技大学 A Design Method of Amplifier Matching Network Based on Simplified Real-Frequency Method
CN110798152A (en) * 2019-10-22 2020-02-14 北京信芯科技有限公司 Low-noise amplifier
CN111565040A (en) * 2020-07-14 2020-08-21 南京汇君半导体科技有限公司 Voltage-controlled oscillator based on dual common mode resonance
CN111740706A (en) * 2020-08-17 2020-10-02 成都嘉纳海威科技有限责任公司 Broadband high-linearity driving amplifier of 5G system
CN111934632A (en) * 2020-09-27 2020-11-13 成都嘉纳海威科技有限责任公司 Ultra-wideband high-power amplifier
CN112448675A (en) * 2019-08-27 2021-03-05 天津大学青岛海洋技术研究院 Terahertz frequency band high-gain high-output power broadband power amplifier
CN113114131A (en) * 2021-04-22 2021-07-13 浙江大学 Current multiplexing radio frequency amplifier circuit
CN113114116A (en) * 2021-02-25 2021-07-13 温州大学 Radio frequency low noise amplifier
CN113783536A (en) * 2021-08-06 2021-12-10 天津大学 Broadband high-linearity driving amplifier with flat gain
CN114785365A (en) * 2022-03-11 2022-07-22 复旦大学 A capacitor-assisted three-coil transformer circuit
WO2023040238A1 (en) * 2021-09-16 2023-03-23 深圳飞骧科技股份有限公司 Differential power amplifier
CN116015227A (en) * 2023-02-20 2023-04-25 优镓科技(北京)有限公司 Parallel differential power amplifier

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Cited By (20)

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Publication number Priority date Publication date Assignee Title
CN109871580B (en) * 2019-01-10 2023-04-07 杭州电子科技大学 Amplifier matching network design method based on simplified real-frequency method
CN109871580A (en) * 2019-01-10 2019-06-11 杭州电子科技大学 A Design Method of Amplifier Matching Network Based on Simplified Real-Frequency Method
CN112448675A (en) * 2019-08-27 2021-03-05 天津大学青岛海洋技术研究院 Terahertz frequency band high-gain high-output power broadband power amplifier
CN110798152A (en) * 2019-10-22 2020-02-14 北京信芯科技有限公司 Low-noise amplifier
CN110798152B (en) * 2019-10-22 2022-04-26 北京信芯科技有限公司 Low-noise amplifier
CN111565040A (en) * 2020-07-14 2020-08-21 南京汇君半导体科技有限公司 Voltage-controlled oscillator based on dual common mode resonance
CN111740706B (en) * 2020-08-17 2020-12-04 成都嘉纳海威科技有限责任公司 Broadband high-linearity driving amplifier of 5G system
CN111740706A (en) * 2020-08-17 2020-10-02 成都嘉纳海威科技有限责任公司 Broadband high-linearity driving amplifier of 5G system
CN111934632A (en) * 2020-09-27 2020-11-13 成都嘉纳海威科技有限责任公司 Ultra-wideband high-power amplifier
CN113114116B (en) * 2021-02-25 2022-09-06 温州大学 A radio frequency low noise amplifier
CN113114116A (en) * 2021-02-25 2021-07-13 温州大学 Radio frequency low noise amplifier
CN113114131A (en) * 2021-04-22 2021-07-13 浙江大学 Current multiplexing radio frequency amplifier circuit
CN113783536B (en) * 2021-08-06 2023-05-02 天津大学 Broadband high-linearity driving amplifier with flat gain
CN113783536A (en) * 2021-08-06 2021-12-10 天津大学 Broadband high-linearity driving amplifier with flat gain
WO2023040238A1 (en) * 2021-09-16 2023-03-23 深圳飞骧科技股份有限公司 Differential power amplifier
US11848650B2 (en) 2021-09-16 2023-12-19 Lansus Technologies Inc. Differential power amplifier
CN114785365A (en) * 2022-03-11 2022-07-22 复旦大学 A capacitor-assisted three-coil transformer circuit
CN114785365B (en) * 2022-03-11 2024-03-08 复旦大学 Capacitor-assisted three-coil transformer circuit
CN116015227A (en) * 2023-02-20 2023-04-25 优镓科技(北京)有限公司 Parallel differential power amplifier
CN116015227B (en) * 2023-02-20 2024-01-23 优镓科技(北京)有限公司 Parallel differential power amplifier

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