CN109149359A - A kind of tapered semiconductor laser - Google Patents
A kind of tapered semiconductor laser Download PDFInfo
- Publication number
- CN109149359A CN109149359A CN201811276335.0A CN201811276335A CN109149359A CN 109149359 A CN109149359 A CN 109149359A CN 201811276335 A CN201811276335 A CN 201811276335A CN 109149359 A CN109149359 A CN 109149359A
- Authority
- CN
- China
- Prior art keywords
- tapered
- cavity surface
- rib region
- semiconductor laser
- tapered zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 239000013307 optical fiber Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of tapered semiconductor laser, the program includes rib region and tapered zone；Rib region generates the seed laser of nearly diffraction limit, and seed laser enters tapered zone amplification output；The front cavity surface of tapered zone, i.e., for the Cavity surface of the one end connecting with rib region without feedback laser, seed laser is unidirectionally amplified in tapered zone.The program can realize the unidirectional amplification of laser, front cavity surface makes beam quality be not easy to deteriorate in amplification process without feedback arrangement, can greatly increase the length of tapered zone, and higher power can both be exported by reaching, the beam quality of nearly diffraction limit can be kept again, it can be achieved that the laser of super brightness exports.
Description
Technical field
The present invention relates to semiconductor laser knot design field, especially a kind of tapered semiconductor laser.
Background technique
In recent years, high-power semiconductor laser chip (LD) is quickly grown, as pump light source be widely used in it is civilian and
Military field, especially as pump source of optical fiber laser, growth momentum is swift and violent in recent years.As optical fiber laser is to semiconductor
Laser pumping source exports the continuous promotion of brightness demand, and the quantity of traditional tail optical fiber pumping source coupling semiconductor laser chip connects
Nearly physics limit, the brightness of chip can only be promoted by continuing raising output brightness.On the other hand, aperture is total to by high-quality and efficient rate to close
Beam, realization high-brightness semiconductor laser directly exports and the miniaturization of Recent study a new generation, lightweight high power laser light light
One of the important channel in source.
Nearly diffraction limit laser is optimal pump source of optical fiber laser, but due to many reasons semiconductor laser chip
It is poor in slow-axis direction beam quality.The high power stripe laser one single chip of current 100 μm wide of 9xx nm wave band is continuous
Output power has reached 15 W-30 W, and electrical-optical transfer efficiency has reached 65% or more, however slow axis beam quality can only achieve
10-20 times of diffraction limit (M2=10-20), corresponding slow axis brightness can only achieve the level of 10 MW/cm2sr.In addition to light beam
The promotion of quality, the promotion of brightness further include the output power for improving single-chip.By the shadow of Cavity surface damage, nonlinear effect etc.
It rings, current 100 μm of wide chip maximum power output is limited in the level of 30 W or so, continues raising output power and compels
Innovative research will be carried out in chip design by being essential.If single-chip slow axis beam quality reaches nearly diffraction limit, while defeated
Power is increased to hectowatt grade out, then the brightness of semiconductor laser single-chip can promote two magnitudes.
Summary of the invention
The purpose of the present invention aiming at deficiency of the prior art, and provides a kind of tapered semiconductor laser
Technical solution, the program can realize the unidirectional amplification of laser, and front cavity surface makes beam quality in amplification process without feedback arrangement
In be not easy to deteriorate, the length of tapered zone can be greatly increased, higher power can not only be exported by reaching, but also can keep nearly diffraction pole
The beam quality of limit is, it can be achieved that the laser of super brightness exports.
This programme is achieved by the following technical measures:
A kind of tapered semiconductor laser includes rib region and tapered zone；Rib region generates the seed laser of nearly diffraction limit,
Seed laser enters tapered zone amplification output；The Cavity surface of the front cavity surface of tapered zone, i.e., the one end connecting with rib region swashs without feedback
Seed laser is unidirectionally amplified in light, tapered zone.
As the preferred of this programme: the front cavity surface of tapered zone is provided with inclination Cavity surface structure；Anti-reflective is coated in inclination Cavity surface
Penetrate film.
As the preferred of this programme: the side that the connecting pin of tapered zone and rib region is located at rib region is provided on piece DBR
Optical grating construction.
As the preferred of this programme: high reflection deielectric-coating is deposited in laser rear facet, and antireflection deielectric-coating is deposited in front cavity surface.
As the preferred of this programme: rib region is ridged waveguide structure.
As the preferred of this programme: tapered zone is tapered gain waveguiding structure.
As the preferred of this programme: the length ratio of tapered zone and rib region is greater than 2.
The beneficial effect of this programme can according to the description of the above program, due to using rib region to send out in this scenario
The seed laser of nearly diffraction limit, the front cavity surface of tapered zone are penetrated, i.e., the Cavity surface of the one end connecting with rib region makes without feedback laser
Seed laser is unidirectionally amplified in tapered zone, can guarantee that beam quality is not easy to deteriorate in amplification process, can greatly increase tapered zone
Length, higher power can not only be exported by reaching, but also the beam quality of nearly diffraction limit can be kept, it can be achieved that super brightness
Laser output.
It can be seen that compared with prior art, the present invention having substantive features and progress, the beneficial effect implemented
It is obvious.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
In figure, 101 be laser rear facet, and 102 be ridge waveguide, and 103 be DBR, and 104 be tapered transmission line, and 105 be laser
Device front cavity surface, 106 be tapered zone front cavity surface.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.That is, unless specifically stated, each feature is only
It is an example in a series of equivalent or similar characteristics.
As shown, this programme includes rib region and tapered zone；Rib region generates the seed laser of nearly diffraction limit, kind
Sub- laser enters tapered zone amplification output；The front cavity surface of tapered zone, i.e., the Cavity surface of the one end being connect with rib region without feedback laser,
Unidirectionally amplify seed laser in tapered zone.The front cavity surface of tapered zone is provided with inclination Cavity surface structure；Antireflection is coated in inclination Cavity surface
Film.The side that the connecting pin of tapered zone and rib region is located at rib region is provided on piece DBR optical grating construction.Laser rear facet steams
High reflection deielectric-coating is plated, antireflection deielectric-coating is deposited in front cavity surface.Rib region is ridged waveguide structure.Tapered zone is tapered gain wave
Guide structure.
Embodiment:
It applies in 980 nm laser of GaAs base:
Epitaxial structure:
350 μm of substrate layer, 700 nm of lower limit layer, 2400 nm of ducting layer, 700 nm of upper limiting layer, 200 nm of contact layer.
Chip structure:
1) ridged section length: 1 mm；
2) ridged sector width: 5 μm；
3) ridged etching depth: 1.0 m;
4) Bragg mirror: 1.3 m of etching depth, 300 nm of period, logarithm 1000 are right；
5) tapered zone angle: 4 degree；
6) taper section length: 4 mm；
7) tapered zone etching depth: 200 nm；
8) front cavity surface corrodes: ethylene glycol: 30% phosphoric acid: hydrogen peroxide=20:5:1, and 3.5 μm of corrosion depth；
9) cavity surface film coating: it is 98% that rear facet, which plates highly reflecting films reflectivity, and front cavity surface coating anti reflection film reflectivity is 0.1%.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (7)
1. a kind of tapered semiconductor laser, it is characterized in that: including rib region and tapered zone；The rib region generates nearly diffraction
The seed laser of the limit, seed laser enter tapered zone amplification output；The front cavity surface of the tapered zone is connect with rib region
The Cavity surface of one end unidirectionally amplifies seed laser without feedback laser, tapered zone.
2. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: the front cavity surface of the tapered zone is arranged
There is inclination Cavity surface structure；Anti-reflective film is coated in the inclination Cavity surface.
3. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: the company of the tapered zone and rib region
It connects end and the side of rib region is provided on piece DBR optical grating construction.
4. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: laser rear facet vapor deposition is high
Antireflection deielectric-coating is deposited in reflecting medium film, front cavity surface.
5. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: the rib region is ridge waveguide knot
Structure.
6. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: the tapered zone is tapered gain wave
Guide structure.
7. a kind of tapered semiconductor laser according to claim 1, it is characterized in that: the length of the tapered zone and rib region
The ratio between degree is greater than 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811276335.0A CN109149359A (en) | 2018-10-30 | 2018-10-30 | A kind of tapered semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811276335.0A CN109149359A (en) | 2018-10-30 | 2018-10-30 | A kind of tapered semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109149359A true CN109149359A (en) | 2019-01-04 |
Family
ID=64806841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811276335.0A Pending CN109149359A (en) | 2018-10-30 | 2018-10-30 | A kind of tapered semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109149359A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873295A (en) * | 2019-04-17 | 2019-06-11 | 中国工程物理研究院应用电子学研究所 | A kind of integrated Cascaded amplification semiconductor laser of on piece |
| CN112688169A (en) * | 2020-12-25 | 2021-04-20 | 华中科技大学 | Semiconductor laser bar and semiconductor external cavity |
| CN113594851A (en) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | High-brightness conical semiconductor laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381762A (en) * | 2001-04-17 | 2002-11-27 | 松下电器产业株式会社 | Optical waveguide path device and light source and optical device using the device |
| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid Integrated Tunable Semiconductor Lasers |
| CN101471534A (en) * | 2007-12-28 | 2009-07-01 | 中国科学院半导体研究所 | Method for making high brightness semiconductor conical laser/amplifier |
| CN101809833A (en) * | 2007-09-28 | 2010-08-18 | 三洋电机株式会社 | Nitride-group semiconductor light-emitting element, nitride-group semiconductor laser element, nitride-group semiconductor light emitting diode, their manufacturing method, and nitride-group semiconductor layer forming method |
| CN107681461A (en) * | 2012-05-17 | 2018-02-09 | 菲尼萨公司 | For EPON（PON）The direct modulation laser of application |
-
2018
- 2018-10-30 CN CN201811276335.0A patent/CN109149359A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381762A (en) * | 2001-04-17 | 2002-11-27 | 松下电器产业株式会社 | Optical waveguide path device and light source and optical device using the device |
| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid Integrated Tunable Semiconductor Lasers |
| CN101809833A (en) * | 2007-09-28 | 2010-08-18 | 三洋电机株式会社 | Nitride-group semiconductor light-emitting element, nitride-group semiconductor laser element, nitride-group semiconductor light emitting diode, their manufacturing method, and nitride-group semiconductor layer forming method |
| CN101471534A (en) * | 2007-12-28 | 2009-07-01 | 中国科学院半导体研究所 | Method for making high brightness semiconductor conical laser/amplifier |
| CN107681461A (en) * | 2012-05-17 | 2018-02-09 | 菲尼萨公司 | For EPON（PON）The direct modulation laser of application |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873295A (en) * | 2019-04-17 | 2019-06-11 | 中国工程物理研究院应用电子学研究所 | A kind of integrated Cascaded amplification semiconductor laser of on piece |
| CN112688169A (en) * | 2020-12-25 | 2021-04-20 | 华中科技大学 | Semiconductor laser bar and semiconductor external cavity |
| CN113594851A (en) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | High-brightness conical semiconductor laser |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190104 |
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| RJ01 | Rejection of invention patent application after publication |