CN109148691A - A kind of low-voltage multiplication type colour organic photodetector and preparation method thereof - Google Patents
A kind of low-voltage multiplication type colour organic photodetector and preparation method thereof Download PDFInfo
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- CN109148691A CN109148691A CN201811037852.2A CN201811037852A CN109148691A CN 109148691 A CN109148691 A CN 109148691A CN 201811037852 A CN201811037852 A CN 201811037852A CN 109148691 A CN109148691 A CN 109148691A
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- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
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- 238000005530 etching Methods 0.000 claims description 14
- 238000007738 vacuum evaporation Methods 0.000 claims description 12
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 11
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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Abstract
本发明公开了一种低电压倍增型彩色有机光电探测器，包括ITO玻璃基片，ITO玻璃基片的一个表面上依次涂覆有阳极缓冲层、活性层及Al电极层。本发明还公开了一种低电压倍增型彩色有机光电探测器的制备方法，按照在玻璃基片上镀ITO电极层、在吹干后的ITO电极层上涂覆阳极缓冲层、在阳极缓冲层上涂覆活性层和在活性层上真空蒸镀Al电极层，退火，温度降至室温得到步骤。本发明的探测器工作电压低，外量子效率高，比探测率高，本发明的探测器的制备方法，工艺简单，对于设备的要求低。
The invention discloses a low-voltage multiplication type color organic photoelectric detector, which comprises an ITO glass substrate. One surface of the ITO glass substrate is sequentially coated with an anode buffer layer, an active layer and an Al electrode layer. The invention also discloses a preparation method of a low-voltage multiplication type color organic photodetector. The steps of coating an active layer and vacuum-evaporating an Al electrode layer on the active layer, annealing, and lowering the temperature to room temperature. The detector of the present invention has low working voltage, high external quantum efficiency and high specific detection rate. The preparation method of the detector of the present invention has simple process and low requirements for equipment.
Description
Technical field
The invention belongs to organic semiconductor technologies fields, are related to a kind of low-voltage multiplication type colour organic photodetector,
The invention further relates to a kind of preparation methods of low-voltage multiplication type colour organic photodetector.
Background technique
Organic photoelectrical material is with light-weight, preparation process is simple, is easily processed into large area, at low cost and response light
The advantages that spectral limit is wide, the absorption coefficient of light is big, can be widely applied to photodetector.Research and develop new device architecture and its manufacturer
Method is to improve photodetector optical responsivity, quantum efficiency, specific detecivity key technology.
Though conventional structure organic photodetector has lower operating voltage, however, since external quantum efficiency is low (general
Less than 100%), specific detecivity is not high, limits application of the detector under low light condition therefore, improves organic detectors detection
Ability is most important.People utilized electron trap booster action and flip-chip device structure in recent years, introduced external circuit charge note
Enter to improve the detectivity of organic detectors.It is rung although several detectors reported at present obtain high light under some monochromatic light
It answers and specific detecivity, but remains that operating voltage is excessively high, three primary colours are not complete, complex structure and other problems.On solving
Problem is stated, this patent provides a kind of with low-work voltage, high light sensitivity (R), high external quantum efficiency (EQE), high specific detecivity
And the multiplication type colour organic photodetector of simple process (D*),.
Summary of the invention
It is an object of the present invention to provide a kind of low-voltage multiplication type colour organic photodetectors, and operating voltage is low,
External quantum efficiency is high, and specific detecivity is high.
It is a further object to provide the preparation method of low-voltage multiplication type colour organic photodetector, preparations
Method is simple, low for equipment requirements.
The first technical solution that the present invention uses is a kind of low-voltage multiplication type colour organic photodetector, including
Ito glass substrate is sequentially coated with anode buffer layer, active layer and Al electrode layer on one surface of ito glass substrate.
The characteristics of the first technical solution of the invention, is:
Anode buffer layer be PEDOT:PSS layers, and anode buffer layer with a thickness of 32nm~38nm.
Active layer is by P3HT, PBDTTT-F, PC61BM and C60The composite layer of composition, the active layer with a thickness of
190nm~210nm.
The mass ratio of P3HT and PBDTTT-F is 11.8-12.2:7.8-8.2, P3HT and PC61The mass ratio of BM is 11.8-
12.2:2.8-3.2 P3HT and C60Mass ratio be 11.8-12.2:0-0.5.
Al electrode layer with a thickness of 90nm-110nm.
The another technical solution that the present invention uses is a kind of preparation of low-voltage multiplication type colour organic photodetector
Method specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, is cleaned, drying；
Step 2, coated anode buffer layer in the ITO electrode layer after drying；
Step 3, active layer is coated on anode buffer layer；
Step 4, the vacuum evaporation Al electrode layer on active layer, annealing, temperature are down to room temperature, and it is color to obtain low-voltage multiplication type
Color organic photodetector.
The characteristics of another technical solution of the present invention, also resides in:
In step 1 after plating ITO electrode layer on a glass substrate, exposure mask, pattern etching are carried out to ITO electrode layer, then
It is rinsed, dries up again.
Step 2 is specific to be carried out by the following method:
By PEDOT:PSS with the speed of 3300rpm-3700rpm be spin-coated on drying after ITO electrode layer on, spin coating when
Between be 50s-70s, then on 95 DEG C -105 DEG C of numerical-control heating plate anneal 10min~15min.
Step 3 is specific to be carried out by the following method:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F be
11.8-12.2:7.8-8.2 P3HT and PC61The mass ratio of BM is 11.8-12.2:2.8-3.2, P3HT and C60Mass ratio be
11.8-12.2:0-0.5；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, the active layer solution is spun on anode buffer layer with the speed of 570rpm-630rpm, spin coating
Time is 50s-70s；
Step 3.4, anneal 20min on 90 DEG C~100 DEG C of numerical-control heating plate.
Vacuum evaporation in step 4 is monitored by oscillating quartz minitors, controls the rate of vacuum evaporation
For 0.3nms-1, while control vapor deposition Al electrode layer with a thickness of 90nm-110nm；In step 4 in a vacuum 105
DEG C~115 DEG C at a temperature of anneal 15min~20min.
The beneficial effects of the invention are as follows
A kind of low-voltage multiplication type colour organic photodetector of the present invention, operating voltage is low, and external quantum efficiency is high, than visiting
Survey rate is high；
A kind of low-voltage multiplication type colour organic photodetector of the present invention, property layer are used in P3HT:PBDT-TT-F:
PC61BM three-phase bulk heterojunction has widened active layer absorption spectrum using spectrum complementation, has realized three primary colours hypersorption；
A kind of low-voltage multiplication type colour organic photodetector of the present invention, in the C of active layer incorporation small scale60As
Electron energy level trap is acted on using the electron assistant of trap capture, hole is caused to be injected, generated photomultiplier transit, improve detection
Optical responsivity, the specific detecivity of device；
A kind of low-voltage multiplication type colour organic photodetector of the present invention exists in active layer and meets light-generated excitons dissociation
P3HT:PC61BM and PBDTTT-F:PC61Two kinds of bulk heterojunctions of BM, it is ensured that detector works under low bias；
A kind of low-voltage multiplication type colour organic photodetector of the present invention, simple process, the requirement for equipment is low, fits
For industrial mass manufacture.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of low-voltage multiplication type colour organic photodetector of the present invention；
Fig. 2 is a kind of abosrption spectrogram of low-voltage multiplication type colour organic photodetector of the present invention；
Fig. 3 is a kind of energy diagram of low-voltage multiplication type colour organic photodetector of the present invention；
Fig. 4 is a kind of photomultiplier transit schematic diagram of low-voltage multiplication type colour organic photodetector of the present invention；
Fig. 5 is a kind of C of low-voltage multiplication type colour organic photodetector of the present invention60Signal after trap level capture
Figure；
Fig. 6 is a kind of J-V curve of the low-voltage multiplication type colour organic photodetector of the present invention under different light
Figure；
Fig. 7 is that a kind of transient state of low-voltage multiplication type colour organic photodetector feux rouges under -4V bias of the present invention is rung
Answer curve；
Fig. 8 is that a kind of transient state of low-voltage multiplication type colour organic photodetector green light under -4V bias of the present invention is rung
Answer curve；
Fig. 9 is that a kind of transient state of low-voltage multiplication type colour organic photodetector blue light under -4V bias of the present invention is rung
Answer curve.
In figure, 1.ITO glass substrate, 2. anode buffer layers, 3. active layers, 4.Al electrode layer.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
A kind of low-voltage multiplication type colour organic photodetector, as shown in Figure 1, including ito glass substrate 1, ito glass
The PEDOT:PSS layer of 32nm~38nm, 3 and of active layer of 190nm~210nm are sequentially coated on one surface of substrate 1
The Al electrode layer 4 of 90nm-110nm.
Wherein, active layer 3 is by P3HT, PBDTTT-F, PC61BM and C60The composite layer of composition, and P3HT in active layer 3
Mass ratio with PBDTTT-F is 11.8-12.2:7.8-8.2, P3HT and PC61The mass ratio of BM is 11.8-12.2:2.8-
3.2, P3HT and C60Mass ratio be 11.8-12.2:0-0.5.
In a kind of low-voltage multiplication type colour organic photodetector of the present invention, anode buffer layer 2 to main body active layer into
Row modification, can effectively collect hole, improve photogenerated current, while reducing dark current；
As shown in Figures 2 and 3, active layer 3 is P3HT, PBDTTT-F, PC61BM and C60Mixed film, active layer 3 can be inhaled
The visible light for receiving visible spectrum all wavelengths can carry out effectively dissociation for light-generated excitons and provide P3HT:PC61BM and
PBDTTT-F:PC61Two kinds of bulk heterojunctions of BM, so that it is guaranteed that detector has low operating voltage；Pass through the C of small scale60Electronics
Energy level trap booster action, causes hole to be injected, and generates photomultiplier transit, improves the detectivity of detector.
As shown in figure 3, when low-voltage multiplication type colour organic photodetector applies forward voltage, the electricity of cathode injection
The smallest potential barrier 0.4eV (PC in three potential barriers that son overcomes organic material and Al electrode layer cathode to be formed under electric field action61BM
△ E 0.4eV, PBDT-TT-F △ E 0.76eV, P3HT △ E 1.1eV) enter PC61The LOMO energy level of BM, and it is transported to anode
Or electric current is compounded to form with anode injected holes.Similarly, anode injected holes is without overcoming potential barrier -0.1eV (P3HT △ E-
0.1eV, PBDTTT-F △ E-0.05eV, PC61BM △ E0.9eV) a large amount of hole is injected into the HUMO energy level of P3HT, and with
Cathode injected electrons is compound or forms very high current by cathode collector, and as the increase electric current of voltage increases rapidly therewith,
Similar to positively biased pn-junction characteristic.When applying backward voltage, anode current will overcome larger potential barrier 1.3eV to enter PC61BM's
LOMO energy level, the HUMO energy level that hole will overcome potential barrier 0.8eV to enter P3HT, since electrons and holes are intended to overcome high potential barrier shape
At electric current, therefore electric current is very small, is similar to reverse biased pn-junction characteristic.
As shown in Figure 4 and Figure 5, when carrying out illumination under applying backward voltage, PC61BM and P3HT and PBDTTT-F absorbs
The photon of respective respective wavelength generates exciton, and separates to form free carrier electrons and holes in heterojunction boundary.In electric field
Under the action of, hole and electronics pass through PBDT-TT-F or P3HT, PC respectively61The interpenetrating networks transfer passages that BM is formed, it is each
Self-electrode is collected to form photogenerated current.At the same time, part light induced electron is by the C of Fig. 560After trap level capture, in electronics product
It can cause the accumulation in Al electrode side hole while tired, then will form space charge in active layer 3/Al electrode bed boundary
Area leads to P3HT band curvature, and Al work function increases with it, and barrier width will be thinned therewith, this will cause external circuit hole
By being collected in the HOMO energy level of tunneling injection to P3HT by anode, photoelectric current is photogenerated current and external circuit hole at this time
The sum of Injection Current, device generate photomultiplier transit, so that visiting the photoelectricity of low-voltage multiplication type colour organic photodetector
Characteristic is greatly improved.
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with 3300rpm-
The speed of 3700rpm is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 50s-70s, then at 95 DEG C -105 DEG C
Numerical-control heating plate on anneal 10min~15min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F be
11.8-12.2:7.8-8.2 P3HT and PC61The mass ratio of BM is 11.8-12.2:2.8-3.2, P3HT and C60Mass ratio be
11.8-12.2:0-0.5；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 570rpm-630rpm, when spin coating
Between be 50s-70s；
Step 3.4, anneal 18min-22min on 90 DEG C~100 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 90nm-110nm after, under vacuum carry out 105 DEG C~115 DEG C move back
Fiery 15min~20min, reduces the temperature to room temperature later, obtains low-voltage multiplication type colour organic photodetector.
Embodiment 1
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with the speed of 3300rpm
Degree is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 50s, is then annealed on 95 DEG C of numerical-control heating plate
10min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F and PC are weighed61BM, wherein the mass ratio of P3HT and PBDTTT-F is 11.8:
7.8, P3HT and PC61The mass ratio of BM is 11.8:2.8；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 570rpm, spin-coating time 50s；
Step 3.4, anneal 18min-22min on 90 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 90nm after, under vacuum carry out 105 DEG C of DEG C of annealing 15min, later
Room temperature is reduced the temperature to, low-voltage multiplication type colour organic photodetector is obtained.
Embodiment 2
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with the speed of 3700rpm
Degree is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 70s, is then annealed on 105 DEG C of numerical-control heating plate
15min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F be
12.2:8.2 P3HT and PC61The mass ratio of BM is 12.2:3.2, P3HT and C60Mass ratio be 12.2:0.5；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 630rpm, spin-coating time 70s；
Step 3.4, anneal 22min on 100 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 110nm after, under vacuum carry out 115 DEG C of annealing 20min, later
Room temperature is reduced the temperature to, low-voltage multiplication type colour organic photodetector is obtained.
Embodiment 3
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with the speed of 3500rpm
Degree is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 60s, is then annealed on 100 DEG C of numerical-control heating plate
12min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F is 12:
8, P3HT and PC61The mass ratio of BM is 12:3, P3HT and C60Mass ratio be 12:0.2；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 600rpm, spin-coating time 60s；
Step 3.4, anneal 20min on 95 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 100nm after, under vacuum carry out 110 DEG C of annealing 15min~
20min reduces the temperature to room temperature later, obtains low-voltage multiplication type colour organic photodetector.
Embodiment 4
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with the speed of 3400rpm
Degree is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 55s, is then annealed on 98 DEG C of numerical-control heating plate
12min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F be
11.8:8.2 P3HT and PC61The mass ratio of BM is 11.8:3.2, P3HT and C60Mass ratio be 11.8:0.5；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 580rpm, spin-coating time 55s；
Step 3.4, anneal 19min on 93 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 92nm after, under vacuum carry out 108 DEG C of annealing 16min, later general
Temperature drops to room temperature, obtains low-voltage multiplication type colour organic photodetector.
Embodiment 5
A kind of preparation method of low-voltage multiplication type colour organic photodetector specifically carries out as steps described below:
Step 1, ITO electrode layer is plated on a glass substrate, obtains ito glass substrate 1, and exposure mask, figure are carried out to ITO electrode layer
Then shape etching will clean, drying then using the ITO electrode layer after a large amount of pure water cleaning exposure mask, pattern etching；
Then ultrasonic cleaning 15min is carried out to ito glass substrate 1 with deionized water again, then using acetone to ito glass
Substrate 1 carries out ultrasonic cleaning 15min, continues to be cleaned by ultrasonic 15min using dehydrated alcohol, finally dries up ito glass with pure nitrogen gas
Substrate 1；
Step 2, coated anode buffer layer 2 in the ITO electrode layer after drying: by PEDOT:PSS with the speed of 3600rpm
Degree is spin-coated in the ITO electrode layer after drying, and the time of spin coating is 55s, is then annealed on 102 DEG C of numerical-control heating plate
14min；
Step 3, the specific progress by the following method of active layer 3 is coated on anode buffer layer 2:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F be
12.2:7.8 P3HT and PC61The mass ratio of BM is 12.2:2.8, P3HT and C60Mass ratio be 12.2:0.1；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, is then used at room temperature
15h is sufficiently stirred in constant temperature blender with magnetic force, obtains active layer solution；
Step 3.3, active layer solution is spun on anode buffer layer 2 with the speed of 620rpm, spin-coating time 65s；
Step 3.4, anneal 21min on 98 DEG C of numerical-control heating plate；
Step 4, on active layer 3 oscillating quartz minitors monitoring under with 0.3nms-1Speed
Vacuum evaporation Al electrode layer 4, until Al electrode layer 4 with a thickness of 115nm after, under vacuum carry out 112 DEG C of annealing 19min, later
Room temperature is reduced the temperature to, low-voltage multiplication type colour organic photodetector is obtained.
A kind of low-voltage that the preparation method of low-voltage multiplication type colour organic photodetector obtains of the present invention is doubled
Type colour organic photodetector is tested, the light source of test are as follows: red LED lamp, wavelength 630nm, optical power are
0.27mW/cm2；Green light LED lamp, wavelength 530nm, optical power 0.19mW/cm2；Blue LED lamp, wavelength 460nm, light function
Rate is 0.21mW/cm2, current density as shown in FIG. 6 and voltage J-V characteristic curve are obtained, the present invention can be obtained from Fig. 6
Low-voltage multiplication type colour organic photodetector have good Effect on Detecting to different light sources.
Under -4V bias, the transient state photoresponse rise time and fall time of detector three primary colours are tested.Such as figure
Shown in 7, when testing feux rouges, from the 10%-90% of Vrp, the time of rising is 120 μ s, from the 90%-10% of Vrp
The time of decline is 817 μ s；
As shown in figure 8, from the 10%-90% of Vrp, the time of rising is 138 μ s, from Vrp when testing green light
90%-10% decline time be 833 μ s；
As shown in figure 9, from the 10%-90% of Vrp, the time of rising is 175 μ s, from Vrp when testing blue light
90%-10% decline time be 175 μ s；
Therefore, a kind of low-voltage that the preparation method of low-voltage multiplication type colour organic photodetector obtains times of the present invention
Increasing type colour organic photodetector has faster speed of detection when detecting to different light sources.
When bias voltage is -4V, low-voltage multiplication type colour organic photoelectric that 1- of embodiment of the present invention embodiment 5 is obtained
The responsiveness R of detector three primary colours, external quantum efficiency (EQE), specific detecivity (D*) as shown in table 1, embodiment 1- embodiment 5
Low-voltage multiplication type colour organic photodetector dark current be 10-5A/cm2, the feux rouges, the wave that are 630nm to wavelength
The blue light and wavelength of a length of 460nm is the green light of 530nm, and specific detecivity reaches 7 × 1011Jones or more, and 7 ×
1011-1012Between Jones, low-voltage multiplication type colour organic photodetector that this method obtains has good stability.
Responsiveness, the external quantum efficiency, specific detecivity of 1 detector three primary colours of table
Claims (10)
1. a kind of low-voltage multiplication type colour organic photodetector, which is characterized in that described including ito glass substrate (1)
Anode buffer layer (2), active layer (3) and Al electrode layer (4) are sequentially coated on one surface of ito glass substrate (1).
2. a kind of low-voltage multiplication type colour organic photodetector according to claim 1, which is characterized in that the sun
Pole buffer layer (2) be PEDOT:PSS layers, and anode buffer layer (2) with a thickness of 32nm~38nm.
3. a kind of low-voltage multiplication type colour organic photodetector according to claim 1, which is characterized in that the work
Property layer (3) be by P3HT, PBDTTT-F, PC61BM and C60The composite layer of composition, the active layer (3) with a thickness of 190nm~
210nm。
4. a kind of low-voltage multiplication type colour organic photodetector according to claim 3, which is characterized in that described
The mass ratio of P3HT and PBDTTT-F is 11.8-12.2:7.8-8.2, P3HT and PC61The mass ratio of BM is 11.8-12.2:2.8-
3.2, P3HT and C60Mass ratio be 11.8-12.2:0-0.5.
5. a kind of low-voltage multiplication type colour organic photodetector according to claim 1, which is characterized in that the Al
Electrode layer (4) with a thickness of 90nm-110nm.
6. a kind of preparation method of low-voltage multiplication type colour organic photodetector, which is characterized in that specifically according to following steps
It is rapid to carry out:
Step 1, ITO electrode layer is plated on a glass substrate, is cleaned, drying；
Step 2, coated anode buffer layer (2) in the ITO electrode layer after drying；
Step 3, active layer (3) are coated on anode buffer layer (2)；
Step 4, the vacuum evaporation Al electrode layer (4) on active layer (3), annealing, temperature are down to room temperature, obtain low-voltage multiplication type
Colored organic photodetector.
7. a kind of preparation method of low-voltage multiplication type colour organic photodetector according to claim 6, feature
It is, in the step 1 after plating ITO electrode layer on a glass substrate, exposure mask, pattern etching is carried out to ITO electrode layer, then
It is rinsed, dries up again.
8. a kind of preparation method of low-voltage multiplication type colour organic photodetector according to claim 6, feature
It is, the step 2 is specific to be carried out by the following method:
PEDOT:PSS is spin-coated in the ITO electrode layer after drying with the speed of 3300rpm-3700rpm, the time of spin coating is
50s-70s, then anneal on 95 DEG C -105 DEG C of numerical-control heating plate 10min~15min.
9. a kind of preparation method of low-voltage multiplication type colour organic photodetector according to claim 6, feature
It is, the step 3 is specific to be carried out by the following method:
Step 3.1, P3HT, PBDTTT-F, PC are weighed61BM and C60, wherein the mass ratio of P3HT and PBDTTT-F is 11.8-
12.2:7.8-8.2 P3HT and PC61The mass ratio of BM is 11.8-12.2:2.8-3.2, P3HT and C60Mass ratio be 11.8-
12.2:0-0.5；
Step 3.2, by weighed P3HT, PBDTTT-F, PC61BM and C60It is dissolved in 1ml chlorobenzene, then uses constant temperature magnetic at room temperature
15h is sufficiently stirred in power blender, obtains active layer solution；
Step 3.3, the active layer solution is spun on anode buffer layer (2) with the speed of 570rpm-630rpm, when spin coating
Between be 50s-70s；
Step 3.4, anneal 20min on 90 DEG C~100 DEG C of numerical-control heating plate.
10. a kind of preparation method of low-voltage multiplication type colour organic photodetector according to claim 6, feature
It is, the vacuum evaporation in the step 4 is monitored by oscillating quartz minitors, controls the speed of vacuum evaporation
Rate is 0.3nms-1, while control vapor deposition Al electrode layer (4) with a thickness of 90nm-110nm；Existing in step 4 in a vacuum
Anneal 15min~20min at a temperature of 105 DEG C~115 DEG C.
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