CN109148369B - Heating laser stripping equipment - Google Patents
Heating laser stripping equipment Download PDFInfo
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- CN109148369B CN109148369B CN201811196018.8A CN201811196018A CN109148369B CN 109148369 B CN109148369 B CN 109148369B CN 201811196018 A CN201811196018 A CN 201811196018A CN 109148369 B CN109148369 B CN 109148369B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 56
- 238000005485 electric heating Methods 0.000 claims abstract description 34
- 238000004321 preservation Methods 0.000 claims abstract description 22
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims description 14
- 239000000498 cooling water Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 21
- 239000010980 sapphire Substances 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 abstract description 19
- 238000005336 cracking Methods 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 229910002601 GaN Inorganic materials 0.000 description 32
- 239000000463 material Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 101100167280 Caenorhabditis elegans cin-4 gene Proteins 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses heating laser stripping equipment, which comprises a laser stripping equipment body, wherein the laser stripping equipment body comprises a moving platform arranged at the lower end, the moving platform is provided with a heating base, a sample table is arranged on the heating base, the heating base comprises an electric heating device which is arranged below the sample table and is used for heating the sample table, the lower end of the sample table is also provided with a temperature sensor for detecting the temperature of the sample table, a heat preservation cover is covered above the sample table, and a heat insulation transparent window which is convenient for laser to pass is arranged at the position corresponding to the top end of the heat preservation cover and the sample table. The heating laser stripping equipment provided by the invention provides a proper temperature environment for stripping the GaN epitaxial wafer, solves the problem of residual stress of the GaN epitaxial wafer grown on the sapphire substrate, and avoids the occurrence of cracking during stripping.
Description
Technical Field
The present invention relates to a heating laser peeling apparatus.
Background
III/V nitrides based on GaN, inGaN and AlGaN are semiconductor materials which are paid attention to in recent years, are core components of light-emitting diodes in semiconductor illumination, and have the characteristics of continuously variable direct band gap of 1.9-6.2 eV, excellent physical and chemical stability, high saturated electron mobility and the like, so that the III/V nitrides become the most preferable materials of optoelectronic devices such as lasers, light-emitting diodes and the like.
However, due to limitations of GaN (gallium nitride) itself growth technology, today's large-area GaN materials are mostly grown on sapphire substrates. Although the quality of GaN grown on a sapphire substrate is high, the application is the most widespread, but the development of GaN (third generation semiconductor material) based semiconductor devices is greatly limited due to the non-conductive and poor heat conductive properties of sapphire. To avoid this disadvantage, a method of removing sapphire after growing a GaN-based device and replacing a substrate of Si, cu, etc. with high thermal and electrical conductivity has been invented. In the process of sapphire removal, the method mainly used is the laser lift-off technique. Although the GaN grown on the sapphire substrate has very high quality and wide application, however, since the sapphire substrate and the GaN crystal are heterogeneous materials, the lattice constants and the thermal expansion coefficients of the two materials are very different, the lattice constant mismatch degree between the GaN and the sapphire substrate exceeds 14%, the thermal mismatch degree is doubled, and thus the large lattice mismatch degree and the thermal expansion difference inevitably cause the problem of residual stress of the GaN epitaxial wafer grown on the sapphire substrate, and the GaN epitaxial wafer is easy to crack during peeling.
In laser lift-off, the problem of chipping during lift-off is not serious when the GaN thickness is 4-5 microns, whereas it is very difficult to completely lift off the GaN film using a conventional lift-off method when the thickness exceeds 50 microns, and chipping occurs.
The invention patent No. 200910136458.9 discloses a solid laser lift-off and dicing integrated apparatus which is a device for lift-off GaN epitaxial wafers by laser, but which has been found to be susceptible to cracking during lift-off due to the lack of a heating device to provide a suitable temperature for the lift-off environment, which can cause residual stress problems in growing GaN epitaxial wafers on sapphire substrates.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide heating laser stripping equipment so as to solve the problem of residual stress of a GaN epitaxial wafer grown on a sapphire substrate and avoid the occurrence of cracking when the stripping thickness exceeds 50 microns.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a heating laser equipment of peeling off, includes the laser equipment body that peels off, the laser equipment body is including setting up in the moving platform of lower extreme, moving platform is provided with the heating base, be provided with the sample platform on the heating base, the heating base including set up in sample platform below and be used for the electric heater unit of sample platform heating, the sample platform lower extreme still is provided with the temperature sensor who is used for detecting the sample platform temperature, the sample platform top is covered with the heat preservation cover, the top of heat preservation cover with be provided with the thermal-insulated transparent window that makes things convenient for laser to pass on the position that the sample platform corresponds.
Further, the laser stripping equipment body comprises a solid laser, a beam shaping mirror, a beam expanding mirror, a vibrating mirror motor, a vibrating mirror lens, a field lens and a machine vision system, and further comprises an industrial control computer and control software, wherein the beam shaping mirror is positioned below the solid laser, the beam expanding mirror, the vibrating mirror lens, the vibrating mirror motor, the field lens and the beam shaping mirror are positioned behind the solid laser, the laser beam emitted by the solid laser is shaped, the vibrating mirror motor is positioned in front of the field lens, and the action of the vibrating mirror lens is controlled according to instructions emitted by the control software, so that different scanning paths and cutting paths are realized, the mobile platform is positioned below the solid laser, and the control software is operated on the industrial control computer.
Further, the lower end of the heat preservation cover is clamped and fixed in the groove at the upper end of the heating base.
Further, a cavity is formed in the inner wall of the periphery side of the heat preservation cover, a cooling water circulating pipe is wound in the cavity, and a water inlet and a water outlet of the cooling water circulating pipe are respectively positioned on the outer wall of the heat preservation cover.
Further, the temperature sensor is a thermocouple.
Further, the electric heating device is an electric heating wire or an electric heating sheet or an electric heating lamp.
Further, the temperature sensor and the electric heating device are respectively connected with the engineering computer.
Further, the electrical heating device is used for heating the sample stage to 800-1200 ℃, such as 900 ℃ or 1000 ℃ within 3-5 min.
Further, the height of the heating cavity formed between the heat preservation cover and the heating base is 300-500mm, preferably 300-400mm.
Further, the transparent window is a heat-insulating lens or heat-insulating glass which does not absorb laser.
Wherein the beam shaping mirror shapes the laser spot into small spots of different geometries. In the solid laser lift-off and cutting integrated device of the present invention, the geometric shapes include square, rectangle, circle, ellipse, pentagon, and hexagon. The small spot has a perimeter of 3-1000 microns square spot. The small light spot is a circular light spot with the diameter of 3-300 microns. The energy of the center of the small light spot is strongest, and the energy gradually weakens towards the periphery. The machine vision system comprises an imaging lens, a CCD, a video acquisition card and a movable workbench. And simultaneously has the functions of stripping and cutting. The beam expander and the beam shaper work simultaneously. In the solid laser peeling and cutting integrated device, the beam expander and the beam shaper work in a time-sharing manner. The laser is used for stripping and cutting at the same time. The laser used was a DPSS solid state laser with a wavelength less than 400 nm.
Compared with the prior art, the invention has the beneficial technical effects that:
because the sapphire substrate and the GaN crystal are heterogeneous materials, the lattice constants and the thermal expansion coefficients of the sapphire substrate and the GaN substrate are greatly different, the lattice constant mismatch degree between the GaN substrate and the sapphire substrate exceeds 14%, the thermal mismatch degree is doubled, the large lattice mismatch degree and the thermal expansion difference inevitably cause the problem of residual stress of a GaN epitaxial wafer growing on the sapphire substrate, the GaN epitaxial wafer is easy to crack during peeling, a heating device provides a proper temperature environment for a sample stage when the GaN epitaxial wafer is peeled by adopting laser (heating to 800-1000 ℃ in 3-5min, the peeling effect can be furthest ensured at the temperature while the influence on a heat-insulating transparent window is avoided, the problem that the lattice constant thermal mismatch degree between the GaN substrate and the sapphire substrate is too high due to the fact that the lattice constants and the thermal expansion coefficients of the GaN substrate are greatly different is solved, meanwhile, the sample stage is covered by a heat-insulating cover, the peeling effect is ensured, the risk of easy to crack during peeling is further reduced, the cavity height is 300-500mm (preferably 300-400 mm), the high dust pollution window is avoided, and the problem that the crack is caused by the low-radiation rate of the lens is even the light transmittance is prevented from being changed due to the fact that the thermal denaturation is too low; the heat-insulating transparent window can facilitate laser to pass through and not absorb laser, laser energy is free from loss, and the heat-insulating property is good, so that the laser head can be effectively protected from being damaged under the condition of overhigh heat.
Drawings
The invention is further described with reference to the following description of the drawings.
FIG. 1 is a schematic view of a heating device on a moving platform of a heating laser peeling apparatus according to the present invention;
FIG. 2 is a schematic view of a cooling water circulation pipe;
reference numerals illustrate: 1-heating a base; 2-an electric heating device; 3-sample stage; 4-thermocouple; 5-protecting cover; 6-an insulating lens; 7-a water inlet; 8-a water outlet; 9-a cooling water circulation pipe; 10-mobile platform.
Detailed Description
The utility model provides a heating laser stripping equipment, includes the laser stripping equipment body (the patent in the background art is seen to specific structure and the application method of laser stripping equipment body), the laser stripping equipment body is including setting up in the moving platform 10 of lower extreme, as shown in fig. 1, be provided with heating base 1 on the moving platform 10, be provided with the sample platform on the heating base 1, heating base 1 including set up in sample platform 3 below and be used for giving the electric heater unit 2 of sample platform 3 heating, sample platform 3 lower extreme still is provided with thermocouple 4 that is used for detecting sample platform 3 temperature, sample platform 3 top is covered with heat preservation cover 5, the top of heat preservation cover 5 with be provided with the thermal-insulated lens 6 that makes things convenient for the laser to pass on the position that sample platform 3 corresponds.
In this embodiment, the lower end of the heat insulation cover 6 is fastened and fixed in the groove 101 at the upper end of the heating base 1. As shown in fig. 2, a cavity is arranged in the inner wall of the circumference side of the heat insulation cover 5, a cooling water circulation pipe 9 is wound in the cavity, and a water inlet 7 and a water outlet 8 of the cooling water circulation pipe 9 are respectively positioned on the outer wall of the heat insulation cover 5. The electric heating device 2 is an electric heating wire or an electric heating sheet, such as a nichrome spot heating wire. The thermocouple 4 and the electric heating device 2 are respectively connected with an engineering computer, and the engineering computer is used for controlling the working state of the electric heating device 2 according to the feedback of the thermocouple 4. The electric heating device 2 is used for heating the sample stage to 600-1500deg.C, preferably 800-1200deg.C, such as 800 deg.C, 900 deg.C, 1000 deg.C, etc., in 3-5 min. The control circuit involved is a conventional technical means in the art and is not described in detail herein.
When the device is used, a sapphire substrate with a GaN material is placed on a sample table 3, then a protective cover 5 is covered, an electric heating device 2 is started, the temperature is heated to a set temperature, a thermocouple feeds back a signal to an engineering computer, the electric heating device is controlled to stop heating, and then the laser generated by a laser head is used for scanning and irradiating the sapphire substrate with the GaN material through a heat insulation lens 6, so that the purpose of stripping a GaN epitaxial wafer is achieved. The GaN epitaxial wafer is in a proper temperature environment, so that the problem of excessively high lattice constant thermal mismatch degree between the GaN material and the sapphire substrate due to the fact that lattice constants and thermal expansion coefficients of the GaN material and the sapphire substrate are quite different is avoided. And thermal-insulated lens 6 can make things convenient for laser to pass and effectual protection laser head, avoids the laser head to damage under too high heat.
Example 1
The utility model provides a heating laser stripping equipment, includes the laser stripping equipment body (the patent in the background art is seen to specific structure and the application method of laser stripping equipment body), the laser stripping equipment body is including setting up in the moving platform 10 of lower extreme, as shown in fig. 1, be provided with heating base 1 on the moving platform 10, be provided with the sample platform on the heating base 1, heating base 1 including set up in sample platform 3 below and be used for giving the electric heater unit 2 of sample platform 3 heating, sample platform 3 lower extreme still is provided with thermocouple 4 that is used for detecting sample platform 3 temperature, sample platform 3 top is covered with heat preservation cover 5, the top of heat preservation cover 5 with be provided with the thermal-insulated lens 6 that makes things convenient for the laser to pass on the position that sample platform 3 corresponds. The lower end of the heat preservation cover 6 is clamped and fixed in a groove 101 at the upper end of the heating base 1. As shown in fig. 2, a cavity is arranged in the inner wall of the circumference side of the heat insulation cover 5, a cooling water circulation pipe 9 is wound in the cavity, and a water inlet 7 and a water outlet 8 of the cooling water circulation pipe 9 are respectively positioned on the outer wall of the heat insulation cover 5. The electric heating device 2 is an electric heating wire or an electric heating sheet, such as a nichrome spot heating wire. The thermocouple 4 and the electric heating device 2 are respectively connected with an engineering computer, and the engineering computer is used for controlling the working state of the electric heating device 2 according to the feedback of the thermocouple 4. The electric heating device 2 heats the sample stage to 900 ℃ within 4 min.
Example 2
All other things are the same as in example 1 except that the heat-retaining cover 6 is not used to form a closed heating cavity.
Example 3
Otherwise the same as in example 1, except that the electric heating device 2 heated the sample stage to 600℃or 700℃in 4 min.
Example 4
Otherwise the same as in example 1, except that the electric heating device 2 heated the sample stage to 1300 ℃ in 4 min.
Example 5
Otherwise the same as in example 1, except that the electric heating device 2 heated the sample stage to 1600 ℃ in 4 min.
Example 6
The other points are the same as in example 1, except that the electric heating device 2 is not used to heat the sample stage.
Example 7
Otherwise the same as in example 1, except that the electric heating device 2 heated the sample stage to 1200 ℃ in 4 min.
Example 8
Otherwise the same as in example 1, except that the electric heating device 2 heated the sample stage to 800℃in 4 min.
The results of the examples are shown in the following table:
in practical operation, when the thickness of GaN is 4-5 microns, the problem of cracking in the peeling process is not serious, and when the thickness exceeds 50 microns, the ordinary peeling mode is very difficult to completely peel off the GaN film, and cracking can occur. According to the invention, a great amount of researches and practices show that when the stripping thickness exceeds 50 micrometers, the problem of fragmentation when the GaN film is stripped completely by adopting a common stripping mode can be effectively avoided by heating the sample table to 800-1200 ℃ and adopting the heat insulation cover to form a heat insulation (heating) cavity for heat insulation, the stripping effect is high in stability, and the stripping is carried out for 20 times without fragmentation; and when not heated, the test is carried out for 20 times, and 12 times of fragmentation occurs; while when heated but not incubated, 20 peels were tested and 6 disintegrates occurred. The problem that the GaN film with the thickness of more than 50 micrometers is cracked when the GaN film is completely peeled off in a common peeling mode is effectively avoided by heating the sample table to 800-1200 ℃ and adopting the heat preservation cover to form a heat preservation (heating) cavity for heat preservation.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (1)
1. The utility model provides a heating laser stripping equipment, includes laser stripping equipment body, laser stripping equipment body is including setting up in the moving platform of lower extreme, its characterized in that: the movable platform is provided with a heating base, a sample table is arranged on the heating base, the heating base comprises an electric heating device which is arranged below the sample table and is used for heating the sample table, the lower end of the sample table is also provided with a temperature sensor which is used for detecting the temperature of the sample table, a heat preservation cover is covered above the sample table, a heat insulation transparent window which is convenient for laser to pass is arranged at the position corresponding to the top end of the heat preservation cover and the sample table, the height of a heating cavity formed between the heat preservation cover and the heating base is 300-500mm, a cavity is arranged in the inner wall of the periphery of the heat preservation cover, a cooling water circulation pipe is wound in the cavity, and a water inlet and a water outlet of the cooling water circulation pipe are respectively positioned on the outer wall of the heat preservation cover;
the laser stripping equipment body comprises a solid laser, a beam shaping mirror, a beam expanding mirror, a vibrating mirror motor, a vibrating mirror lens, a field lens, a machine vision system, an industrial computer and control software, wherein the beam shaping mirror is positioned below the solid laser, the beam expanding mirror, the vibrating mirror lens, the vibrating mirror motor, the field lens and the beam shaping mirror are positioned behind the solid laser, the laser beam emitted by the solid laser is shaped, the vibrating mirror motor is positioned in front of the field lens, the action of the vibrating mirror lens is controlled according to instructions emitted by the control software, so that different scanning paths and cutting paths are realized, the moving platform is positioned below the solid laser, and the control software is operated on the industrial computer;
the lower end of the heat preservation cover is clamped and fixed in a groove at the upper end of the heating base;
the temperature sensor is a thermocouple;
the electric heating device is an electric heating wire or an electric heating sheet or an electric heating lamp;
the temperature sensor and the electric heating device are respectively connected with the engineering computer;
the electric heating device is used for heating the sample table to 800-1200 ℃ within 3-5 min;
the transparent window is a heat-insulating lens or glass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811196018.8A CN109148369B (en) | 2018-10-15 | 2018-10-15 | Heating laser stripping equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811196018.8A CN109148369B (en) | 2018-10-15 | 2018-10-15 | Heating laser stripping equipment |
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| CN109148369A CN109148369A (en) | 2019-01-04 |
| CN109148369B true CN109148369B (en) | 2024-03-15 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085537B (en) * | 2019-04-15 | 2021-09-24 | 东莞市中镓半导体科技有限公司 | Temperature-controlled device for high-temperature laser lift-off |
| CN110102877A (en) * | 2019-05-07 | 2019-08-09 | 东莞市中镓半导体科技有限公司 | Laser stripping device and method for liquid metal auxiliary heat conduction |
| CN110534477B (en) * | 2019-08-26 | 2022-04-15 | 东莞市中镓半导体科技有限公司 | Laser stripping integrated equipment |
| CN113628960B (en) * | 2021-07-28 | 2024-03-22 | 山东大学 | High-temperature laser stripping device and method for GaN single crystal substrate on sapphire template |
| CN113432379A (en) * | 2021-07-30 | 2021-09-24 | 上海睿昇半导体科技有限公司 | Heating and cooling integrated tray body and manufacturing method and application thereof |
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| US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| CN101882578A (en) * | 2009-05-08 | 2010-11-10 | 东莞市中镓半导体科技有限公司 | Solid laser stripping and cutting integrated equipment |
| KR20150100370A (en) * | 2014-02-25 | 2015-09-02 | 주식회사 코윈디에스티 | A laser polishing system |
| CN107283068A (en) * | 2016-03-31 | 2017-10-24 | 大族激光科技产业集团股份有限公司 | A kind of aluminium alloy diced system and method |
| CN208889638U (en) * | 2018-10-15 | 2019-05-21 | 保定中创燕园半导体科技有限公司 | A kind of heating laser peel-off device |
-
2018
- 2018-10-15 CN CN201811196018.8A patent/CN109148369B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
| CN101882578A (en) * | 2009-05-08 | 2010-11-10 | 东莞市中镓半导体科技有限公司 | Solid laser stripping and cutting integrated equipment |
| KR20150100370A (en) * | 2014-02-25 | 2015-09-02 | 주식회사 코윈디에스티 | A laser polishing system |
| CN107283068A (en) * | 2016-03-31 | 2017-10-24 | 大族激光科技产业集团股份有限公司 | A kind of aluminium alloy diced system and method |
| CN208889638U (en) * | 2018-10-15 | 2019-05-21 | 保定中创燕园半导体科技有限公司 | A kind of heating laser peel-off device |
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| CN109148369A (en) | 2019-01-04 |
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