CN105720141B - Nondestructive GaN substrate laser stripping method - Google Patents
Nondestructive GaN substrate laser stripping method Download PDFInfo
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- CN105720141B CN105720141B CN201610141887.5A CN201610141887A CN105720141B CN 105720141 B CN105720141 B CN 105720141B CN 201610141887 A CN201610141887 A CN 201610141887A CN 105720141 B CN105720141 B CN 105720141B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 29
- 239000010980 sapphire Substances 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000227 grinding Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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Abstract
本发明提出一种无损伤的GaN衬底激光剥离方法，通过在蓝宝石外延的晶体材料中预生长一层激光阻挡层，该激光阻挡层包含超晶格结构或者量子阱结构，能够对逸出的高能量激光进行分布式布拉格反射或者光吸收，从而高能量激光不能进入到GaN衬底材料区域，最后避免激光对GaN外延层造成损伤。从根本上解决了在激光剥离过程中，激光对GaN衬底材料的损伤问题。
The present invention proposes a non-damaging GaN substrate laser stripping method, which pre-grows a laser blocking layer in the sapphire epitaxial crystal material. The laser blocking layer includes a superlattice structure or a quantum well structure, which can perform distributed Bragg reflection or light absorption on the escaped high-energy laser, so that the high-energy laser cannot enter the GaN substrate material area, and finally avoids the laser from damaging the GaN epitaxial layer. The problem of laser damage to the GaN substrate material during the laser stripping process is fundamentally solved.
Description
Technical field
The present invention relates to photoelectric semiconductor material technical fields, more particularly to a kind of laser lift-off on a sapphire substrate
The method of GaN base epitaxial layer.
Background technique
III-V group nitride material based on GaN and InGaN, AlGaN, 1.9-6.2eV are continuously adjusted direct
Band gap, excellent physics, chemical stability, the superior functions such as high saturated electrons drift speed and high breakdown field strength become short
The preferred material of wavelength semiconductor photoelectric device.As one of the technology for preparing GaN self-supported substrate material, laser lift-off technique
The quick stripping of (Laser Lift-off Technique) due to that can realize GaN substrate under the environmental condition of lower requirement
From to obtain biggish development.
However, being difficult to avoid causing to damage to GaN substrate material during laser lift-off GaN substrate.Patent
US7256483 points out that the GaN after laser lift-off need to be chemically-mechanicapolish polished (CMP) to reduce damage.On the other hand, Chinese
105006446 A of patent CN uses femtosecond laser technology, and damage is reduced in a manner of a kind of cold working, improves laser stripping
From quality.But this method has particular/special requirement to laser light source, and can not fundamentally solve the epitaxial layer damage of laser generation
Hurt problem.
Summary of the invention
The present invention proposes a kind of undamaged GaN substrate laser-stripping method, passes through the crystalline material in sapphire extension
One layer of laser barrier layer of middle pregrown, the laser barrier layer include superlattice structure or quantum well structure, can be to evolution
High energy laser carries out Distributed Bragg Reflection (Distributed Bragg Reflectors) or light absorption, thus high
Energy laser cannot enter GaN substrate material area, finally laser be avoided to cause to damage to GaN epitaxial layer.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme.A kind of undamaged GaN substrate laser stripping
From method, comprising the following steps:
1. step, grows GaN buffer layer on a sapphire substrate；
2., growth includes the laser barrier layer of quantum well structure or superlattice structure to step on GaN buffer layer；
3. step, grows GaN substrate on 2. laser barrier layer that step is grown；
Step is 4., incident from the bottom surface of Sapphire Substrate by laser, and irradiation is integrally scanned to sapphire surface, is made
GaN buffer layer is decomposed, the entirety of GaN substrate and laser barrier layer, is stripped completely from Sapphire Substrate；
5., grinding and polishing removes laser barrier layer to step, obtains GaN substrate.
The ingredient on the laser barrier layer, by one of III race's element or a variety of, with one of group Ⅴ element or more
Kind is formed.
The structure on the laser barrier layer includes one of quantum well structure, superlattice structure or the two knot
The combination of structure.
The step 4. in GaN buffer layer decomposition, can be the decomposed of GaN buffer layer or decompose completely.
The step 1. 2. 3. in growth, can be liquid phase method growth or vapor phase method growth.
The step 4. in laser, can be continuous laser or pulse laser.
Advantage of the invention:
1. fundamentally solving during laser lift-off, damage problem of the laser to GaN substrate material；
2. further reduced the requirement to laser equipment, it is suitble to large-scale production.
Detailed description of the invention
Attached drawing 1 is the GaN substrate of growth on a sapphire substrate material of the invention (one layer of laser barrier layer of pregrown)
Schematic diagram；
Attached drawing 2 is (one layer of the pregrown laser comprising superlattices of laser lift-off GaN substrate material in the embodiment of the present invention one
Barrier layer) process schematic representation；
Attached drawing 3 is (one layer of the pregrown laser comprising Quantum Well of laser lift-off GaN substrate material in the embodiment of the present invention two
Barrier layer) process schematic representation
Description of symbols:
1: Sapphire Substrate, 2:GaN substrate, 3:GaN buffer layer, 4: laser barrier layer, 41: the laser comprising superlattices
Barrier layer, 42: the laser barrier layer comprising Quantum Well, 51: incident laser, 52: the emergent light after barrier function.
Specific embodiment
In order to make the present invention more obvious and understandable, hereby with preferred embodiment, and in conjunction with attached drawing, the present invention is made further specifically
It is bright.GaN buffer layer 3, laser barrier layer 4 and GaN substrate 2 are successively grown in Sapphire Substrate 1 as shown in Figure 1, has been grown
Laser lift-off is used at rear.Incident laser 51 is incident from the bottom surface of Sapphire Substrate 1, sapphire surface is integrally scanned
Irradiation, decomposes GaN buffer layer 3, and the entirety of result GaN substrate 2 and laser barrier layer 4 is shelled completely from Sapphire Substrate 1
From.Grinding and polishing removes laser barrier layer 4, obtains GaN substrate 2.
Embodiment one, a kind of undamaged GaN substrate laser-stripping method, as shown in Figure 2, comprising the following steps:
1., MOCVD grows 8 μm of GaN buffer layer 3 to step in Sapphire Substrate 1；
2. step, adjusts MOCVD growth conditions, growth includes the laser barrier layer 41 of superlattices on GaN buffer layer 3
(superlattice structure of 10 GaN/AlGaN more than period)；
3. step, grows 200 μm of undoped GaN substrates 2 on the laser barrier layer 41 comprising superlattices；
4., by step, 3. resulting sapphire/epitaxial layer is put into laser lift-off equipment (YAG laser light source) to step,
The incident laser 51 of radiation is scanned radiation from the incidence of 1 bottom surface of Sapphire Substrate, in sapphire surface, and GaN buffer layer 3 starts
It decomposes；Meanwhile the incident laser 51 of escape enters in the laser barrier layer 41 comprising superlattices, should include the laser of superlattices
Barrier layer 41 generates Distributed Bragg Reflection to incident laser 51, and the emergent light 52 after barrier function not can enter GaN
In substrate 2, therefore damage not will cause to GaN substrate 2；After the completion of the entire Sapphire Substrate 1 of laser scanning, GaN substrate 2 and
The entirety on the laser barrier layer 41 comprising superlattices, is stripped completely from Sapphire Substrate 1；
5., grinding and polishing removes the laser barrier layer 41 comprising superlattices to step, obtains GaN substrate 2.
Embodiment two, a kind of undamaged GaN substrate laser-stripping method, as shown in figure 3, also may include following step
It is rapid:
1., MOCVD grows 5 μm of GaN buffer layer 3 to step in Sapphire Substrate 1；
2. step, adjusts MOCVD growth conditions, growth includes the laser barrier layer 42 of Quantum Well on GaN buffer layer 3；
3. step, grows 250 μm of GaN substrates 2 for mixing silicon on the laser barrier layer 42 comprising superlattices；
4., by step, 3. resulting sapphire/epitaxial layer is put into laser lift-off equipment (YAG laser light source) to step,
The incident laser 51 of radiation is incident from the bottom surface of Sapphire Substrate 1, is scanned irradiation in sapphire surface, GaN buffer layer 3 is opened
Begin to decompose；Meanwhile the incident laser 51 of escape enters in the laser barrier layer 42 comprising Quantum Well, it should swashing comprising Quantum Well
Photoresist layer 42 is to the generation absorption of incident laser 51, the relatively low energy emergent light 52 projected after barrier function,
Do not reach the energy requirement of the absorption of GaN substrate 2, therefore damage not will cause to GaN substrate 2；When the entire sapphire of laser scanning
After the completion of substrate 1, the entirety on GaN substrate 2 and the laser barrier layer 42 comprising Quantum Well is stripped completely from Sapphire Substrate 1；
5., grinding and polishing removes the laser barrier layer 42 comprising Quantum Well to step, obtains GaN substrate 2.
Claims (5)
1. a kind of undamaged GaN substrate laser-stripping method, which comprises the following steps:
1. step, grows GaN buffer layer on a sapphire substrate；
2., growth includes the laser barrier layer of quantum well structure or/and superlattice structure to step on GaN buffer layer；
3. step, grows GaN substrate on 2. laser barrier layer that step is grown；
Step is 4., incident from the bottom surface of Sapphire Substrate by laser, and irradiation is integrally scanned to sapphire surface, causes GaN slow
It rushes layer to be decomposed, the entirety on GaN substrate and laser barrier layer is stripped completely from Sapphire Substrate；The laser barrier layer is to entering
It penetrates laser and plays Distributed Bragg Reflection effect；
5., grinding and polishing removes laser barrier layer to step, obtains GaN substrate.
2. requiring a kind of undamaged GaN substrate laser-stripping method according to right 1, which is characterized in that the laser resistance
The ingredient of barrier and one of group Ⅴ element or a variety of is made of one of III race's element or a variety of.
3. requiring a kind of undamaged GaN substrate laser-stripping method according to right 1, which is characterized in that the step is 4.
The decomposition of middle GaN buffer layer is the decomposed of GaN buffer layer or is decomposed completely.
4. requiring a kind of undamaged GaN substrate laser-stripping method according to right 1, which is characterized in that the step is 1.
3. the growth in 2. is liquid phase method growth or vapor phase method growth.
5. requiring a kind of undamaged GaN substrate laser-stripping method according to right 1, which is characterized in that the step is 4.
In laser, be continuous laser or pulse laser.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610141887.5A CN105720141B (en) | 2016-03-11 | 2016-03-11 | Nondestructive GaN substrate laser stripping method |
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| CN201610141887.5A CN105720141B (en) | 2016-03-11 | 2016-03-11 | Nondestructive GaN substrate laser stripping method |
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| CN105720141B true CN105720141B (en) | 2019-01-29 |
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| CN107326435A (en) * | 2017-07-28 | 2017-11-07 | 西安交通大学 | A kind of stripping means of growth GaN SiC substrate |
| CN111293201B (en) * | 2018-12-14 | 2022-04-26 | 广州国显科技有限公司 | Semiconductor structure for laser lift-off and method for manufacturing semiconductor structure |
| CN111681946B (en) * | 2020-05-21 | 2022-08-26 | 东莞市中镓半导体科技有限公司 | Preparation method of gallium nitride single crystal substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1383185A (en) * | 2002-05-31 | 2002-12-04 | 南京大学 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
| EP1653523A2 (en) * | 2004-10-28 | 2006-05-03 | LumiLeds Lighting U.S., LLC | Light emitting diode package |
| CN105006446A (en) * | 2015-06-25 | 2015-10-28 | 武汉大学 | Method based on femtosecond laser technology for peeling GaN film and sapphire substrate |
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| KR100837846B1 (en) * | 2006-02-27 | 2008-06-13 | 한국광기술원 | A nitride light emitting device having a laser energy absorption superlattice layer and a method of manufacturing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1383185A (en) * | 2002-05-31 | 2002-12-04 | 南京大学 | Process for preparing self-supporting gallium nitride substrate by laser stripping method |
| EP1653523A2 (en) * | 2004-10-28 | 2006-05-03 | LumiLeds Lighting U.S., LLC | Light emitting diode package |
| CN105006446A (en) * | 2015-06-25 | 2015-10-28 | 武汉大学 | Method based on femtosecond laser technology for peeling GaN film and sapphire substrate |
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