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CN109103265B - Photoelectric sensor packaging structure with cushion block and packaging method thereof - Google Patents

Photoelectric sensor packaging structure with cushion block and packaging method thereof Download PDF

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Publication number
CN109103265B
CN109103265B CN201811095945.0A CN201811095945A CN109103265B CN 109103265 B CN109103265 B CN 109103265B CN 201811095945 A CN201811095945 A CN 201811095945A CN 109103265 B CN109103265 B CN 109103265B
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chip
substrate
spacer
adhesive film
film layer
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CN109103265A (en
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庞宝龙
刘宇环
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Huatian Technology Xian Co Ltd
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Huatian Technology Xian Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a photoelectric sensor packaging structure with a cushion block and a packaging method thereof, wherein the photoelectric sensor packaging structure comprises a substrate, a glue film structure is arranged on the substrate, and a second chip is packaged in the glue film structure; the adhesive film structure is provided with a cushion block, and the cushion block is provided with a first chip; the negative electrode surface of the first chip is electrically connected with the cushion block, the positive electrode surface of the first chip faces upwards, and glass covers the positive electrode surface. The packaging requirements of the photoelectric sensor can be met, the packaging size of the existing photoelectric sensor is smaller, and the existing medical requirements are better met.

Description

一种带有垫块的光电传感器封装结构及其封装方法A photoelectric sensor packaging structure with pads and packaging method thereof

技术领域technical field

本发明属于光学心率传感器封装技术领域;涉及一种带有垫块的光电传感器封装结构,还涉及上述光电传感器的封装方法。The invention belongs to the technical field of packaging of optical heart rate sensors, and relates to a packaging structure of a photoelectric sensor with pads and a packaging method of the photoelectric sensor.

背景技术Background technique

心血管疾病是当前威胁人类健康的首要疾病,人体脉搏波反映心血管系统的机能。脉搏波的强度、速度和节律反映出来的机体生理、精神状态、体力水平等信息可以显示个人健康状态,或作为其他医疗仪器的辅助监测、为医生提供诊断参考等。Cardiovascular disease is the primary disease that currently threatens human health, and the pulse wave of the human body reflects the function of the cardiovascular system. The body's physiology, mental state, physical strength level and other information reflected by the intensity, speed and rhythm of the pulse wave can display personal health status, or serve as auxiliary monitoring for other medical instruments, and provide diagnostic reference for doctors, etc.

目前脉搏波的监测方法主要是采用光电容积法(PPG)或压电感应器原理来间接反映脉搏波的变化。光电容积法是利用血液中血红蛋白的光吸收作用而改变照射到皮肤上的发光二极管(LED)的光强,通过对经皮肤反射的光进行测量而间接得到脉搏波波形。另外一种压电感应法则通过脉搏的波动引起皮肤的波动,由于传感器与皮肤的间隔十分小,当皮肤发生波动时,引起和受压元件间空气的波动,再作用在压电薄膜上产生电信号,这样就把脉搏的机械波动转换成电信号的变化。Currently, pulse wave monitoring methods mainly use photoplethysmography (PPG) or the principle of piezoelectric sensors to indirectly reflect changes in pulse waves. Photoplethysmography uses the light absorption of hemoglobin in the blood to change the light intensity of a light-emitting diode (LED) irradiated on the skin, and indirectly obtains the pulse wave waveform by measuring the light reflected by the skin. Another piezoelectric induction method causes fluctuations in the skin through pulse fluctuations. Since the distance between the sensor and the skin is very small, when the skin fluctuates, it will cause fluctuations in the air between the pressure element and the piezoelectric film, and then act on the piezoelectric film to generate electricity. Signal, so that the mechanical fluctuations of the pulse are converted into changes in electrical signals.

发明内容Contents of the invention

本发明提供了一种带有垫块的光电传感器封装结构及其封装方法;能够满足光电传感器的封装要求,并且使现有的光电传感器的封装尺寸更小,结构更简单,成本低,更好的满足现有的医疗需求。The invention provides a photoelectric sensor packaging structure and a packaging method with pads; it can meet the packaging requirements of the photoelectric sensor, and make the existing photoelectric sensor package smaller in size, simpler in structure, low in cost, and better to meet existing medical needs.

本发明的技术方案是:一种带有垫块的光电传感器封装结构,基板,基板上设置有胶膜层,胶膜层内部封装有第二芯片;胶膜层上设置有垫块,垫块上设置有第一芯片;第一芯片的负极面与垫块电性连接,第一芯片的正极面朝上,且正极面上覆盖有玻璃;所述第二芯片的一面与基板粘接,另一面通过金属导电体与基板电性连接;所述垫块的一面为导电层,另一面连接胶膜层;导电层朝上设置与第一芯片负极面接触;胶膜层朝下设置,且胶膜层完全包裹第二芯片,胶膜层的厚度大于第二芯片的厚度;所述第一芯片的正极面上通过金属导电体与基板电性连接;所述垫块与第一芯片电性连接的一面还通过金属导电体与基板电性连接;所述基板上封装有塑封结构,塑封结构包裹胶膜层、垫块、第一芯片和玻璃,且塑封结构的顶面与玻璃的上表面齐平,且玻璃的上表面裸露。The technical solution of the present invention is: a photoelectric sensor packaging structure with pads, a substrate, an adhesive film layer is arranged on the substrate, and a second chip is packaged inside the adhesive film layer; pads are arranged on the adhesive film layer, and the pads The first chip is arranged on the top; the negative electrode surface of the first chip is electrically connected to the pad, the positive electrode surface of the first chip faces upward, and the positive electrode surface is covered with glass; one side of the second chip is bonded to the substrate, and the other One side is electrically connected to the substrate through a metal conductor; one side of the pad is a conductive layer, and the other side is connected to the adhesive film layer; the conductive layer is arranged upward to contact with the negative electrode surface of the first chip; the adhesive film layer is arranged downward, and the glue The film layer completely wraps the second chip, and the thickness of the adhesive film layer is greater than the thickness of the second chip; the positive surface of the first chip is electrically connected to the substrate through a metal conductor; the pad is electrically connected to the first chip One side is also electrically connected to the substrate through a metal conductor; the substrate is packaged with a plastic-encapsulated structure, the plastic-encapsulated structure wraps the film layer, spacers, the first chip and the glass, and the top surface of the plastic-encapsulated structure is flush with the upper surface of the glass flat, and the upper surface of the glass is exposed.

更进一步的,本发明的特点还在于:Furthermore, the present invention is characterized in that:

其中第一芯片的正极面具有传感区和非传感区;玻璃覆盖在传感区上;非传感区上通过若干个金属导电体与基板电性连接。Wherein the positive electrode surface of the first chip has a sensing area and a non-sensing area; the glass covers the sensing area; the non-sensing area is electrically connected to the substrate through several metal conductors.

其中垫块的一面镀有金属层,且第一芯片负极面与该金属层电性连接。One side of the spacer is plated with a metal layer, and the negative side of the first chip is electrically connected to the metal layer.

其中第一芯片负极面通过导电银浆设置在垫块上。Wherein the negative electrode surface of the first chip is arranged on the spacer through the conductive silver paste.

其中金属层通过金属导电体与基板电性连接。The metal layer is electrically connected to the substrate through a metal conductor.

本发明的另一技术特征是:一种光电传感器的封装方法,包括以下步骤:Another technical feature of the present invention is: a kind of packaging method of photoelectric sensor, comprises the following steps:

步骤S1,将第二芯片的一面粘接在基板上,第二芯片的另一面通过金属导电体电性连接;第一芯片为控制处理芯片;Step S1, bonding one side of the second chip on the substrate, and electrically connecting the other side of the second chip through a metal conductor; the first chip is a control processing chip;

步骤S2,将垫块置于第二芯片的上方,垫块与第二芯片相对的一面设置有胶膜层,胶膜层为FOD胶膜,且胶膜层完全包裹第二芯片,胶膜层的厚度大于第二芯片的厚度;Step S2, place the pad on the top of the second chip, the side of the pad opposite to the second chip is provided with an adhesive film layer, the adhesive film layer is an FOD adhesive film, and the adhesive film layer completely wraps the second chip, the adhesive film layer The thickness is greater than the thickness of the second chip;

步骤S3,垫块朝上的一面镀有金属层,所述金属层电性连接第一芯片的负极面,且在垫块的该面与基板之间连接有金属导电体,金属导电体使第一芯片的负极面与基板电性导通;第一芯片为光传感器芯片;Step S3, the upward side of the spacer is coated with a metal layer, the metal layer is electrically connected to the negative electrode surface of the first chip, and a metal conductor is connected between this surface of the spacer and the substrate, and the metal conductor makes the first chip The negative electrode surface of one chip is electrically connected to the substrate; the first chip is an optical sensor chip;

步骤S4,第一芯片的正极面朝上,正极面包括传感区和非传感区,使用粘结剂将玻璃粘接在传感区上,非传感区通过金属导电体与基板电性连接;In step S4, the positive side of the first chip faces upwards, and the positive side includes a sensing area and a non-sensing area. The glass is bonded to the sensing area with an adhesive, and the non-sensing area is electrically connected to the substrate through a metal conductor. connect;

步骤S5,采用塑封料包裹基板上的胶膜层、垫块、第一芯片和玻璃,形成塑封结构,且塑封结构的上表面与玻璃的上表面齐平,玻璃的上表面裸露;Step S5, wrapping the adhesive film layer, spacer, first chip and glass on the substrate with a plastic sealing compound to form a plastic sealing structure, and the upper surface of the plastic sealing structure is flush with the upper surface of the glass, and the upper surface of the glass is exposed;

步骤S7,得到如上述的带有垫块的光电传感器封装结构。In step S7, the above-mentioned photoelectric sensor packaging structure with pads is obtained.

更进一步的,本发明的特点还在于:Furthermore, the present invention is characterized in that:

其中步骤S中胶膜层的四个侧面分别与垫块3的四个侧面齐平。The four sides of the adhesive film layer in step S are respectively flush with the four sides of the spacer 3 .

其中塑封结构的四个侧面分别与基板的四个侧面齐平。Wherein the four sides of the plastic encapsulation structure are respectively flush with the four sides of the substrate.

与现有技术相比,本发明的有益效果是:该封装结构中采用玻璃传到光电传感器,并且通过封装结构将玻璃、第一芯片、垫块、胶膜层和第二芯片进行封装,并且第二芯片和第一芯片通过金属导电体与基板连接实现光电传感器芯片与控制处理芯片之间的信息交互,采用垫块实现光电传感器芯片与控制处理芯片之间的隔离。Compared with the prior art, the beneficial effect of the present invention is: the glass is passed to the photoelectric sensor in the packaging structure, and the glass, the first chip, the spacer, the adhesive film layer and the second chip are packaged through the packaging structure, and The second chip and the first chip are connected to the substrate through the metal conductor to realize the information interaction between the photoelectric sensor chip and the control processing chip, and the spacer is used to realize the isolation between the photoelectric sensor chip and the control processing chip.

更进一步的,玻璃只需要覆盖光电传感器芯片正极面的传感区,非传感区用于连接基板。Furthermore, the glass only needs to cover the sensing area on the positive side of the photosensor chip, and the non-sensing area is used for connecting the substrate.

更进一步的,在垫块上镀有金属层,通过金属层实现光电传感器负极面与基板的连接。Furthermore, a metal layer is plated on the spacer, and the negative electrode surface of the photoelectric sensor is connected to the substrate through the metal layer.

更进一步的,采用FOD工艺,将第二芯片控制处理芯片包裹,有效的减小了整个封装体的尺寸,可以更好的满足终端客户的需求,此结构封装工艺简单,有效控制生产成本。Furthermore, the FOD process is used to wrap the second chip control processing chip, which effectively reduces the size of the entire package and can better meet the needs of end customers. This structure has a simple packaging process and effectively controls production costs.

附图说明Description of drawings

图1为本发明封装结构的示意图;Fig. 1 is the schematic diagram of packaging structure of the present invention;

图中:1为玻璃;2为第一芯片;3为垫块;4为胶膜结构;5为第二芯片;6为基板;7为塑封结构;8为金属导电体。In the figure: 1 is glass; 2 is the first chip; 3 is the spacer; 4 is the film structure; 5 is the second chip; 6 is the substrate; 7 is the plastic package structure; 8 is the metal conductor.

具体实施方式Detailed ways

下面结合附图和具体实施例对本发明的技术方案进一步说明。The technical solution of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

本发明提供了一种带有垫块的光电传感器封装结构,如图1所示,该封装结构用于对光电传感器以及控制处理芯片进行同时封装,光电传感器包括光学心率传感器。该光电传感器封装结构包括基板6,基板6上依次设置有胶膜结构4、垫块3、第一芯片2和玻璃1,其中胶膜结构4内部封装有第二芯片5,胶膜结构4的厚度为110-135μm;且胶膜结构4的四个侧面分别与垫块3的四个侧面齐平;胶膜结构4、垫块3、第一芯片2和玻璃1外侧包裹有塑封料形成的塑封结构7;塑封结构7的四个侧面分别与基板6的四个侧面齐平,塑封结构7的上表面与玻璃1的上表面齐平,且玻璃1的上表面裸露。The present invention provides a photoelectric sensor packaging structure with pads. As shown in FIG. 1 , the packaging structure is used to simultaneously package the photoelectric sensor and the control processing chip, and the photoelectric sensor includes an optical heart rate sensor. The photoelectric sensor packaging structure includes a substrate 6, on which an adhesive film structure 4, a spacer 3, a first chip 2 and a glass 1 are sequentially arranged, wherein the adhesive film structure 4 is internally packaged with a second chip 5, and the adhesive film structure 4 The thickness is 110-135 μm; and the four sides of the film structure 4 are respectively flush with the four sides of the spacer 3; Plastic sealing structure 7; the four sides of the plastic sealing structure 7 are respectively flush with the four sides of the substrate 6, the upper surface of the plastic sealing structure 7 is flush with the upper surface of the glass 1, and the upper surface of the glass 1 is exposed.

优选的,第二芯片5的一面粘接在基座上,且第二芯片5的另一面通过至少1根金属导电体与基座电性连接;胶膜结构4采用FOD膜,且第二芯片5以及金属导电体封装在胶膜结构4中;如图1所示,第二芯片5和金属导电体均不超出胶膜结构4。Preferably, one side of the second chip 5 is bonded to the base, and the other side of the second chip 5 is electrically connected to the base through at least one metal conductor; the adhesive film structure 4 adopts FOD film, and the second chip 5 and the metal conductors are packaged in the adhesive film structure 4; as shown in FIG. 1 , neither the second chip 5 nor the metal conductors exceed the adhesive film structure 4.

优选的,垫块3与胶膜结构4连接的一面为胶膜层,垫块3的胶膜层朝下与胶膜结构4连接;垫块3的四个侧面分别与胶膜结构4的四个侧面齐平。Preferably, the side where the spacer 3 is connected to the film structure 4 is the film layer, and the film layer of the spacer 3 is connected to the film structure 4 downwards; The sides are flush.

优选的,第一芯片2具有负极面和正极面,第一芯片2的负极面朝下与垫块3的另一面电性连接,且垫块3的该面通过至少1根金属导电体8与基板6电性连接,使第二芯片5通过垫块3的连接面、金属导电体8与基板6电性导通。优选的,垫块3的另一面上镀有金属层,金属成为镀金层、镀银层、镀铝层或镀铜层。优选的,第一芯片2的负极面上涂有导电银浆,导电银浆粘在金属层上。Preferably, the first chip 2 has a negative electrode surface and a positive electrode surface, and the negative electrode surface of the first chip 2 is electrically connected to the other surface of the pad 3, and the surface of the pad 3 is connected to the other surface of the pad 3 through at least one metal conductor 8. The substrate 6 is electrically connected, so that the second chip 5 is electrically connected to the substrate 6 through the connection surface of the spacer 3 and the metal conductor 8 . Preferably, the other surface of the spacer 3 is plated with a metal layer, and the metal becomes a gold-plated layer, a silver-plated layer, an aluminum-plated layer or a copper-plated layer. Preferably, the negative electrode surface of the first chip 2 is coated with conductive silver paste, and the conductive silver paste is adhered to the metal layer.

优选的,第一芯片2的正极面朝上设置,第一芯片2的正极面具有传感区和非传感区;传感区上覆盖有玻璃1;非传感区上设置有若干焊盘,且通过至少1根金属导电体8与基板6电性连接。优选的玻璃1通过粘结剂与第一芯片2正极面上的传感区粘接,粘结剂优选为透光率为90%以上的DAF胶膜。Preferably, the positive side of the first chip 2 is set upwards, and the positive side of the first chip 2 has a sensing area and a non-sensing area; the sensing area is covered with glass 1; a number of pads are arranged on the non-sensing area , and is electrically connected to the substrate 6 through at least one metal conductor 8 . Preferably, the glass 1 is bonded to the sensing area on the positive electrode surface of the first chip 2 through an adhesive, and the adhesive is preferably a DAF adhesive film with a light transmittance of more than 90%.

本发明还提供了一种光电传感器的封装方法,使用该方法能够得到如上所述的带有垫块的光电传感器封装结构;具体步骤为:The present invention also provides a packaging method for a photoelectric sensor, using the method to obtain the packaging structure of a photoelectric sensor with spacers as described above; the specific steps are:

步骤S1,将第二芯片5的一面粘贴在基板6上;第二芯片5的另一面朝上设置,且通过至少1根金属导电体将第二芯片5的另一面与基板6电性连接。Step S1, sticking one side of the second chip 5 on the substrate 6; setting the other side of the second chip 5 facing up, and electrically connecting the other side of the second chip 5 to the substrate 6 through at least one metal conductor .

步骤S2,在第二芯片5的上方设置垫块3,垫块3朝下的一面设置有胶膜层,胶膜层与第二芯片5相对。In step S2 , a spacer 3 is placed above the second chip 5 , an adhesive film layer is provided on the downward side of the spacer 3 , and the adhesive film layer is opposite to the second chip 5 .

步骤S3,在垫块3和基板6之间使用FOD胶膜封装第二芯片5及其连接的金属导电体,得到胶膜结构4。胶膜结构4将第二芯片5及其连接的金属导电体完全封装,且第二芯片5和金属导电体不超出胶膜结构4。胶膜结构4的四个侧面分别与垫块3的四个侧面齐平。胶膜结构的高度在110-135μm之间。Step S3 , encapsulating the second chip 5 and its connected metal conductors with FOD adhesive film between the spacer 3 and the substrate 6 to obtain the adhesive film structure 4 . The adhesive film structure 4 completely encapsulates the second chip 5 and its connected metal conductors, and the second chip 5 and the metal conductors do not exceed the adhesive film structure 4 . The four sides of the film structure 4 are respectively flush with the four sides of the spacer 3 . The height of the film structure is between 110-135 μm.

步骤S4,垫块3朝上的一面与第一芯片2的负极面电性连接,且垫块3的该面通过至少1根金属导电体8与基板6电性连接,使第二芯片的负极面通过该面、金属导电体能够与基板6电性导通。Step S4, the upward side of the spacer 3 is electrically connected to the negative electrode surface of the first chip 2, and this surface of the spacer 3 is electrically connected to the substrate 6 through at least one metal conductor 8, so that the negative electrode of the second chip The metal conductor can be electrically connected to the substrate 6 through the surface.

优选的,垫块3朝上的一面镀有导电金属层,导电金属层为镀金层、镀银层、镀铜层或镀铝层;导电金属层上通过金属导电体与基板6电性连接。第二芯片2的负极面上涂有导电银浆,通过导电银浆第二芯片2与垫块3的导电金属层连接。Preferably, the upward side of the pad 3 is plated with a conductive metal layer, and the conductive metal layer is a gold-plated layer, a silver-plated layer, a copper-plated layer or an aluminum-plated layer; the conductive metal layer is electrically connected to the substrate 6 through a metal conductor. The negative surface of the second chip 2 is coated with conductive silver paste, through which the second chip 2 is connected to the conductive metal layer of the spacer 3 .

优选的,第二芯片2的负极面完全覆盖在垫块3上,且垫块3接触面的面积大于第二芯片2负极面的面积。Preferably, the negative electrode surface of the second chip 2 completely covers the spacer 3 , and the area of the contact surface of the spacer 3 is larger than the area of the negative electrode surface of the second chip 2 .

步骤S5,第二芯片2的正极面朝上设置,正极面上设置有玻璃1,正极面上还通过金属导电体8与基板6电性连接。其中第二芯片2的正极面具有传感区和非传感区,玻璃1覆盖在传感区上,非传感区上设置有多个焊盘,且非传感区通过至少1根金属导电体与基板6电性连接。In step S5, the positive side of the second chip 2 is set upward, the glass 1 is set on the positive side, and the positive side is also electrically connected to the substrate 6 through the metal conductor 8 . The positive surface of the second chip 2 has a sensing area and a non-sensing area, the glass 1 covers the sensing area, a plurality of pads are arranged on the non-sensing area, and the non-sensing area conducts electricity through at least one metal The body is electrically connected to the substrate 6 .

优选的玻璃1上涂有透光率高的粘结剂,然后将玻璃1涂有粘结剂的一面粘在正极面上;其中粘结剂为透光率为90%以上的DAF胶膜。The preferred glass 1 is coated with a binder with high light transmittance, and then the side of the glass 1 coated with the binder is glued to the positive electrode surface; wherein the binder is a DAF adhesive film with a light transmittance of more than 90%.

优选的,玻璃1的面积小于第二芯片2正极面的面积。Preferably, the area of the glass 1 is smaller than the area of the positive electrode surface of the second chip 2 .

步骤S6,采用塑封料对步骤S5得到的结构进行塑封;具体的,在基板6上使用塑封料将胶膜结构4、垫块3、第一芯片2和玻璃1进行包裹封装,得到塑封结构7;塑封结构7还封装所有金属导电体。In step S6, the structure obtained in step S5 is plastic-sealed with a molding compound; specifically, the film structure 4, spacer 3, first chip 2 and glass 1 are packaged and packaged on the substrate 6 with a molding compound to obtain a plastic-sealed structure 7 ; The plastic encapsulation structure 7 also encapsulates all metal conductors.

优选的塑封结构7的四个侧面分别与基板6的四个侧面齐平;塑封结构7的上表面与玻璃1的上表面齐平;玻璃1的上表面裸露。Preferably, the four sides of the plastic sealing structure 7 are respectively flush with the four sides of the substrate 6; the upper surface of the plastic sealing structure 7 is flush with the upper surface of the glass 1; the upper surface of the glass 1 is exposed.

步骤S7,得到本发明带有垫块的光电传感器封装结构。In step S7, the photoelectric sensor packaging structure with pads of the present invention is obtained.

Claims (8)

1.一种带有垫块的光电传感器封装结构,其特征在于,包括基板(6),基板(6)上设置有胶膜层(4),胶膜层(4)内部封装有第二芯片(5);胶膜层(4)上设置有垫块(3),垫块(3)上设置有第一芯片(2);第一芯片(2)的负极面与垫块(3)电性连接,第一芯片(2)的正极面朝上,且正极面上覆盖有玻璃(1);1. A photoelectric sensor packaging structure with pads is characterized in that it comprises a substrate (6), the substrate (6) is provided with an adhesive film layer (4), and the adhesive film layer (4) is internally packaged with a second chip (5); Adhesive film layer (4) is provided with spacer (3), is provided with first chip (2) on spacer (3); The negative electrode face of first chip (2) and spacer (3) electric connection, the positive side of the first chip (2) faces up, and the positive side is covered with glass (1); 所述第二芯片(5)的一面与基板(6)粘接,另一面通过金属导电体与基板(6)电性连接;One side of the second chip (5) is bonded to the substrate (6), and the other side is electrically connected to the substrate (6) through a metal conductor; 所述垫块(3)的一面为导电层,另一面连接胶膜层(4);导电层朝上设置与第一芯片(2)负极面接触;胶膜层(4)朝下设置,且胶膜层(4)完全包裹第二芯片(5),胶膜层(4)的厚度大于第二芯片(5)的厚度;One side of the spacer (3) is a conductive layer, and the other side is connected to the adhesive film layer (4); the conductive layer is arranged upward to contact the negative electrode surface of the first chip (2); the adhesive film layer (4) is arranged downward, and The adhesive film layer (4) completely wraps the second chip (5), and the thickness of the adhesive film layer (4) is greater than the thickness of the second chip (5); 所述第一芯片(2)的正极面上通过金属导电体与基板电性连接;The positive surface of the first chip (2) is electrically connected to the substrate through a metal conductor; 所述垫块(3)与第一芯片(2)电性连接的一面还通过金属导电体与基板(6)电性连接;The side of the spacer (3) electrically connected to the first chip (2) is also electrically connected to the substrate (6) through a metal conductor; 所述基板(6)上封装有塑封结构(7),塑封结构(7)包裹胶膜层(4)、垫块(3)、第一芯片(2)和玻璃(1),且塑封结构(7)的顶面与玻璃(1)的上表面齐平,且玻璃(1)的上表面裸露;The substrate (6) is packaged with a plastic sealing structure (7), the plastic sealing structure (7) wraps the adhesive film layer (4), the spacer (3), the first chip (2) and the glass (1), and the plastic sealing structure ( 7) the top surface of the glass (1) is flush with the upper surface of the glass (1), and the upper surface of the glass (1) is exposed; 所述第一芯片(2)为光传感器芯片;第二芯片(5)为控制处理芯片。The first chip (2) is an optical sensor chip; the second chip (5) is a control processing chip. 2.根据权利要求1所述的带有垫块的光电传感器封装结构,其特征在于,所述第一芯片(2)的正极面具有传感区和非传感区;玻璃(1)覆盖在传感区上;非传感区上通过若干个金属导电体与基板(6)电性连接。2. The photoelectric sensor packaging structure with pads according to claim 1, characterized in that, the positive electrode face of the first chip (2) has a sensing area and a non-sensing area; glass (1) covers the On the sensing area; the non-sensing area is electrically connected to the substrate (6) through several metal conductors. 3.根据权利要求1所述的带有垫块的光电传感器封装结构,其特征在于,所述垫块(3)的一面镀有金属层,且第一芯片(2)负极面与该金属层电性连接。3. The photoelectric sensor packaging structure with spacer according to claim 1, characterized in that, one side of the spacer (3) is plated with a metal layer, and the first chip (2) negative electrode surface and the metal layer electrical connection. 4.根据权利要求3所述的带有垫块的光电传感器,其特征在于,所述第一芯片(2)负极面通过导电银浆设置在垫块(3)上。4. The photoelectric sensor with spacer according to claim 3, characterized in that, the negative electrode surface of the first chip (2) is arranged on the spacer (3) through conductive silver paste. 5.根据权利要求3所述的带有垫块的光电传感器封装结构,其特征在于,所述金属层通过金属导电体与基板电性连接。5 . The photoelectric sensor packaging structure with pads according to claim 3 , wherein the metal layer is electrically connected to the substrate through a metal conductor. 6.一种光电传感器的封装方法,其特征在于,包括以下步骤:6. A packaging method for a photoelectric sensor, comprising the following steps: 步骤S1,将第二芯片(5)的一面粘接在基板(6)上,第二芯片(5)的另一面通过金属导电体电性连接;第二芯片(5)为控制处理芯片;Step S1, bonding one side of the second chip (5) to the substrate (6), and electrically connecting the other side of the second chip (5) through a metal conductor; the second chip (5) is a control processing chip; 步骤S2,将垫块(3)置于第二芯片(5)的上方,垫块(3)与第二芯片(5)相对的一面设置有胶膜层(4),胶膜层(4)为FOD胶膜,且胶膜层(4)完全包裹第二芯片(5),胶膜层(4)的厚度大于第二芯片(5)的厚度;Step S2, placing the spacer (3) above the second chip (5), the side of the spacer (3) opposite to the second chip (5) is provided with an adhesive film layer (4), and the adhesive film layer (4) It is an FOD adhesive film, and the adhesive film layer (4) completely wraps the second chip (5), and the thickness of the adhesive film layer (4) is greater than the thickness of the second chip (5); 步骤S3,垫块(3)朝上的一面镀有金属层,所述金属层电性连接第一芯片(2)的负极面,且在垫块(3)的该面与基板(6)之间连接有金属导电体,金属导电体使第一芯片(2)的负极面与基板(6)电性导通;第一芯片(2)为光传感器芯片;Step S3, the upward side of the spacer (3) is coated with a metal layer, the metal layer is electrically connected to the negative electrode surface of the first chip (2), and between the surface of the spacer (3) and the substrate (6) A metal conductor is connected between them, and the metal conductor makes the negative electrode surface of the first chip (2) electrically conductive with the substrate (6); the first chip (2) is an optical sensor chip; 步骤S4,第一芯片(2)的正极面朝上,正极面包括传感区和非传感区,使用粘结剂将玻璃(1)粘接在传感区上,非传感区通过金属导电体与基板电性连接;Step S4, the positive side of the first chip (2) faces up, the positive side includes a sensing area and a non-sensing area, and the glass (1) is bonded to the sensing area with an adhesive, and the non-sensing area is passed through the metal The conductor is electrically connected to the substrate; 步骤S5,采用塑封料包裹基板(6)上的胶膜层(4)、垫块(3)、第一芯片(2)和玻璃(1),形成塑封结构(7),且塑封结构的上表面与玻璃(1)的上表面齐平,玻璃(1)的上表面裸露;Step S5, wrapping the adhesive film layer (4), pad (3), first chip (2) and glass (1) on the substrate (6) with a plastic sealing compound to form a plastic sealing structure (7), and the upper surface of the plastic sealing structure The surface is flush with the upper surface of the glass (1), and the upper surface of the glass (1) is exposed; 步骤S7,得到如权利要求1所述的带有垫块的光电传感器封装结构。Step S7, obtaining the photoelectric sensor packaging structure with pads as claimed in claim 1 . 7.根据权利要求6所述的光电传感器的封装方法,其特征在于,所述步骤S2中胶膜层(4)的四个侧面分别与垫块(3)的四个侧面齐平。7. The packaging method of photoelectric sensor according to claim 6, characterized in that, in the step S2, the four sides of the adhesive film layer (4) are respectively flush with the four sides of the spacer (3). 8.根据权利要求6所述的光电传感器的封装方法,其特征在于,所述塑封结构(7)的四个侧面分别与基板(6)的四个侧面齐平。8 . The packaging method for photoelectric sensors according to claim 6 , characterized in that, the four sides of the plastic packaging structure ( 7 ) are respectively flush with the four sides of the substrate ( 6 ).
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104194271A (en) * 2014-08-29 2014-12-10 天津德高化成新材料股份有限公司 Dielectric composite material for fingerprint sensor induction layer and preparation method thereof
CN104576594A (en) * 2014-12-31 2015-04-29 华天科技(西安)有限公司 Fingerprint design packaging structure through dispensing technology and preparation method thereof
CN106784031A (en) * 2017-01-18 2017-05-31 华天科技(西安)有限公司 A kind of packaging part of novel photoelectric sensor
CN209000920U (en) * 2018-09-19 2019-06-18 华天科技(西安)有限公司 A photoelectric sensor package structure with spacer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559539B2 (en) * 2001-01-24 2003-05-06 Hsiu Wen Tu Stacked package structure of image sensor
US20040113286A1 (en) * 2002-12-16 2004-06-17 Jackson Hsieh Image sensor package without a frame layer
US10566369B2 (en) * 2016-12-22 2020-02-18 UTAC Headquarters Pte. Ltd. Image sensor with processor package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104194271A (en) * 2014-08-29 2014-12-10 天津德高化成新材料股份有限公司 Dielectric composite material for fingerprint sensor induction layer and preparation method thereof
CN104576594A (en) * 2014-12-31 2015-04-29 华天科技(西安)有限公司 Fingerprint design packaging structure through dispensing technology and preparation method thereof
CN106784031A (en) * 2017-01-18 2017-05-31 华天科技(西安)有限公司 A kind of packaging part of novel photoelectric sensor
CN209000920U (en) * 2018-09-19 2019-06-18 华天科技(西安)有限公司 A photoelectric sensor package structure with spacer

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