CN109005665B - Semiconductor processing sheet - Google Patents
Semiconductor processing sheet Download PDFInfo
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- CN109005665B CN109005665B CN201780020092.1A CN201780020092A CN109005665B CN 109005665 B CN109005665 B CN 109005665B CN 201780020092 A CN201780020092 A CN 201780020092A CN 109005665 B CN109005665 B CN 109005665B
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- Prior art keywords
- adhesive
- adhesive layer
- semiconductor
- film
- semiconductor processing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 329
- 238000012545 processing Methods 0.000 title claims abstract description 115
- 230000001070 adhesive effect Effects 0.000 claims abstract description 216
- 239000000853 adhesive Substances 0.000 claims abstract description 213
- 239000012790 adhesive layer Substances 0.000 claims abstract description 127
- 238000003860 storage Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 95
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 68
- 235000012431 wafers Nutrition 0.000 description 97
- 238000000034 method Methods 0.000 description 62
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 59
- 239000000203 mixture Substances 0.000 description 43
- 239000003431 cross linking reagent Substances 0.000 description 40
- 238000005520 cutting process Methods 0.000 description 38
- 229920006223 adhesive resin Polymers 0.000 description 35
- 239000004840 adhesive resin Substances 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 28
- 239000000178 monomer Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229920000058 polyacrylate Polymers 0.000 description 19
- -1 polyethylene Polymers 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000002904 solvent Substances 0.000 description 17
- 125000000217 alkyl group Chemical group 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- 125000000524 functional group Chemical group 0.000 description 13
- 238000005498 polishing Methods 0.000 description 12
- 230000005856 abnormality Effects 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 230000008961 swelling Effects 0.000 description 10
- 238000003892 spreading Methods 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 238000013329 compounding Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 229920001684 low density polyethylene Polymers 0.000 description 6
- 239000004702 low-density polyethylene Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 5
- 239000013638 trimer Substances 0.000 description 5
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 4
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 239000013522 chelant Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 241001050985 Disco Species 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 150000001991 dicarboxylic acids Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 229920000092 linear low density polyethylene Polymers 0.000 description 2
- 239000004707 linear low-density polyethylene Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- TXTIIWDWHSZBRK-UHFFFAOYSA-N 2,4-diisocyanato-1-methylbenzene;2-ethyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound CCC(CO)(CO)CO.CC1=CC=C(N=C=O)C=C1N=C=O TXTIIWDWHSZBRK-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- CUGZWHZWSVUSBE-UHFFFAOYSA-N 2-(oxiran-2-ylmethoxy)ethanol Chemical compound OCCOCC1CO1 CUGZWHZWSVUSBE-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- SBWOBTUYQXLKSS-UHFFFAOYSA-N 3-(2-methylprop-2-enoyloxy)propanoic acid Chemical compound CC(=C)C(=O)OCCC(O)=O SBWOBTUYQXLKSS-UHFFFAOYSA-N 0.000 description 1
- QOXOZONBQWIKDA-UHFFFAOYSA-N 3-hydroxypropyl Chemical group [CH2]CCO QOXOZONBQWIKDA-UHFFFAOYSA-N 0.000 description 1
- NDWUBGAGUCISDV-UHFFFAOYSA-N 4-hydroxybutyl prop-2-enoate Chemical compound OCCCCOC(=O)C=C NDWUBGAGUCISDV-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005270 abrasive blasting Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000004181 carboxyalkyl group Chemical group 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- GFJVXXWOPWLRNU-UHFFFAOYSA-N ethenyl formate Chemical compound C=COC=O GFJVXXWOPWLRNU-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laminated Bodies (AREA)
Abstract
A sheet for semiconductor processing, which comprises an adhesive layer on a base material and has the following characteristics: when the thickness of the adhesive layer is 200 [ mu ] m, the storage modulus of the adhesive layer with a thickness of 200 [ mu ] m at 0 ℃ is 1000MPa or less, and when the semiconductor processing sheet is attached to the mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 200mN/25mm or less.
Description
Technical Field
The present invention relates to a semiconductor processing sheet.
This application claims priority based on Japanese application No. 2016-.
Background
Dicing sheets are used when a semiconductor wafer is singulated into semiconductor chips by dicing. The dicing sheet is configured to have an adhesive layer on a base material, for example, and is used by being attached to a semiconductor wafer with the adhesive layer. After dicing, the adhesive layer is cured by irradiation with energy rays such as ultraviolet rays, for example, to reduce the adhesive force of the adhesive layer, whereby the semiconductor chip is peeled off from the cured adhesive layer and is easily picked up.
On the other hand, the picked-up semiconductor chip is die-bonded to the circuit surface of the substrate with, for example, a film-like adhesive, 1 or more other semiconductor chips are further stacked on the semiconductor chip as necessary, and after wire bonding, the whole is sealed.
Using the semiconductor package thus obtained, the target semiconductor device is finally manufactured. Therefore, the semiconductor chip may be configured to be picked up in a state where the surface to be a chip bonding target is provided with a film-like adhesive.
When the film-like adhesive is used in this manner, a dicing die bonding sheet may be used in which the uncut film-like adhesive is provided on the adhesive layer of the dicing sheet. On the other hand, a plurality of semiconductor chips that have been singulated in advance may be provided in advance on the film-like adhesive, and in this case, a processing sheet having the same configuration as the dicing die bonding sheet is also used. When such a processing sheet is used, for example, a plurality of semiconductor chips that have been singulated in advance are provided on the film-like adhesive, and the processing sheet is spread at a low temperature to cut the film-like adhesive in conformity with the outer shape of the semiconductor chips, thereby producing semiconductor chips having the cut film-like adhesive on the target surface.
As a processing sheet (wafer processing tape) suitable for cutting the film-like adhesive by expanding the sheet in this manner, for example, it is disclosed that the shear force at 25 ℃ between the pressure-sensitive adhesive layer and the film-like adhesive (adhesive layer) is 0.2N/mm2Above 200mJ/cm2The processing sheet according to JIS-Z0237, wherein the peeling speed of the pressure-sensitive adhesive layer and the film-like adhesive under a standard state after the irradiation of the energy ray is 300 mm/min, and the peeling force of the pressure-sensitive adhesive layer and the film-like adhesive under a peeling angle of 180 DEG is 0.3N/25mm or less (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2013/103116
Disclosure of Invention
Problems to be solved by the invention
However, the processing sheet disclosed in patent document 1 has a problem that irradiation with energy rays is required when used. In the processing sheet, when the film-like adhesive is cut by expanding the sheet, the adhesive force of the adhesive layer before the irradiation of the energy ray is designed to be high in order to suppress the swelling and scattering of the semiconductor chip provided with the film-like adhesive from the adhesive layer, and the adhesive force of the adhesive layer after the irradiation of the energy ray is designed to be low in order to facilitate the pickup of the semiconductor chip provided with the film-like adhesive.
Accordingly, an object of the present invention is to provide a semiconductor processing sheet having a structure in which an adhesive layer is provided on a base material, and which is used when a film-like adhesive attached to a semiconductor chip is cut, and which does not require energy ray irradiation during use, and which can suppress the semiconductor chip having the film-like adhesive from being swollen and scattered from the adhesive layer when the film-like adhesive is cut by spreading, and which can easily pick up the semiconductor chip having the film-like adhesive.
Means for solving the problems
In order to solve the above problems, the present invention provides a sheet for semiconductor processing, comprising an adhesive layer on a substrate, wherein the adhesive layer having a thickness of 200 μm has a storage modulus at 0 ℃ of 1000MPa or less, and the adhesive force of the adhesive layer to the mirror surface of a semiconductor wafer is 200mN/25mm or less.
In the semiconductor processing sheet of the present invention, the pressure-sensitive adhesive layer is preferably non-energy-ray-curable.
The semiconductor processing sheet of the present invention may further include a film-like adhesive on the pressure-sensitive adhesive layer.
[1] A sheet for semiconductor processing, which comprises an adhesive layer on a base material and has the following characteristics:
when the thickness of the adhesive layer is 200 μm, the storage modulus of the adhesive layer with the thickness of 200 μm at 0 ℃ is 1000MPa or less, and
when the semiconductor processing sheet is attached to the mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 200mN/25mm or less.
[2] The sheet for semiconductor processing according to [1], wherein the adhesive layer is non-energy-ray curable.
[3] The sheet for semiconductor processing according to item [1] or [2], further comprising a film-like adhesive on the pressure-sensitive adhesive layer.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, there can be provided the following semiconductor processing sheet: the semiconductor processing sheet has a structure in which the adhesive layer is provided on the base material, is used when cutting the film-like adhesive attached to the semiconductor chip, does not require energy ray irradiation during use, and can suppress the semiconductor chip provided with the film-like adhesive from swelling and scattering from the adhesive layer when cutting the film-like adhesive by spreading, and can easily pick up the semiconductor chip provided with the film-like adhesive.
Drawings
Fig. 1 is a cross-sectional view schematically showing one embodiment of a semiconductor processing sheet of the present invention.
Fig. 2 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor device in the case where the semiconductor processing sheet of the present invention is used.
Fig. 3 is a cross-sectional view schematically illustrating an embodiment of a method for forming a groove in a semiconductor wafer to obtain a semiconductor chip.
Fig. 4 is a sectional view schematically illustrating an embodiment of a method for forming a modified layer on a semiconductor wafer to obtain a semiconductor chip.
Fig. 5 is a cross-sectional view schematically showing a state of a semiconductor chip when a film-like adhesive is spread in a case where a conventional semiconductor processing sheet is used.
Fig. 6 is a cross-sectional view schematically showing a state where an attempt is made to pick up a semiconductor chip with a film-like adhesive in the case of using a conventional semiconductor processing sheet.
Description of the symbols
1. semiconductor processing sheet, 11. substrate, surface of 11 a. substrate, 12. adhesive layer, surface of 12 a. adhesive layer, 8. semiconductor chip, and back surface of 8 b. semiconductor chip
Detailed Description
< sheet for semiconductor processing >)
The sheet for semiconductor processing of the present invention comprises an adhesive layer on a substrate, wherein the adhesive layer having a thickness of 200 [ mu ] m has a storage modulus at 0 ℃ of 1000MPa or less, and the adhesive force of the adhesive layer to the mirror surface of a semiconductor wafer is 200mN/25mm or less.
In another aspect, the semiconductor processing sheet of the present invention is a semiconductor processing sheet having an adhesive layer on a base material and having the following characteristics:
when the thickness of the adhesive layer is 200 μm, the storage modulus of the adhesive layer with the thickness of 200 μm at 0 ℃ is 1000MPa or less, and
when the semiconductor processing sheet is attached to the mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 200mN/25mm or less.
The semiconductor processing sheet of the present invention is preferably used in a step of cutting the film-like adhesive in conformity with the outer shape of the semiconductor chip by performing a so-called expanding process in which the film-like adhesive is expanded in the surface direction (the direction along the surface, that is, the direction horizontal to the surface of the film-like adhesive) together with the semiconductor processing sheet at a low temperature after the film-like adhesive is provided on the pressure-sensitive adhesive layer and a plurality of semiconductor chips divided in advance are provided on the film-like adhesive. The semiconductor chip (hereinafter, sometimes referred to as "semiconductor chip with film-like adhesive" in the present specification) provided with the cut film-like adhesive on the surface (back surface) opposite to the surface on which the circuit is formed (hereinafter, sometimes simply referred to as "circuit-forming surface") is used for manufacturing a semiconductor device after being picked up.
The sheet for semiconductor processing of the present invention is suitable as a so-called expanding sheet in which the film-like adhesive is expanded and cut as described above.
The semiconductor processing sheet of the present invention can be suitably used alone as a dicing sheet.
According to the semiconductor processing sheet of the present invention, when the film-like adhesive provided on the semiconductor processing sheet is cut by spreading, the semiconductor chip with the film-like adhesive (in other words, the semiconductor processing sheet) can be inhibited from swelling and scattering, and the semiconductor chip with the film-like adhesive can be easily picked up without involving process abnormalities.
The film-like adhesive cut by expanding as described above is suitably used, for example, when a semiconductor chip with a film-like adhesive having a thin semiconductor chip is manufactured.
The plurality of divided semiconductor chips can be produced, for example, by the following method: grooves are formed in a circuit forming surface (front surface) of the semiconductor wafer on the opposite side of the film-like adhesive to the attachment surface (back surface), and the back surface is polished until reaching the grooves. In this way, the operation of cutting into the semiconductor wafer in such a manner that the semiconductor wafer is not divided but the bottom of the groove is left can be referred to as half-cutting. However, the "half dicing" in the present invention does not only refer to an operation of cutting into the semiconductor wafer so that the depth of the groove becomes a specific value, for example, half of the thickness of the semiconductor wafer, but refers to the entire operation of cutting into the semiconductor wafer so that the bottom of the groove remains as described above.
Examples of the method of forming the grooves include a method of forming grooves by cutting into a semiconductor wafer with a knife (i.e., knife dicing), a method of forming grooves by cutting into a semiconductor wafer with laser irradiation (i.e., laser dicing), and a method of forming grooves by cutting into a semiconductor wafer with water containing an abrasive blasting (i.e., water dicing). However, when a semiconductor chip is manufactured by cutting off a part of a semiconductor wafer as described above, if the semiconductor wafer is thin, broken semiconductor chips are easily obtained, and the yield is easily lowered. Further, the whisker-like cutting residue remains on the semiconductor chip, and the chips of the semiconductor wafer adhere to the semiconductor chip, so that the pickup of the semiconductor chip with the film-like adhesive becomes abnormal, and the performance of the obtained semiconductor device is lowered.
On the other hand, the plurality of divided semiconductor chips may be manufactured as follows: the semiconductor wafer is divided at a portion where the modified layer is formed by irradiating the semiconductor wafer with laser light in the infrared region so as to focus on a focal point set inside the semiconductor wafer, and then grinding the back surface of the semiconductor wafer, and further applying a force during grinding to the semiconductor wafer being ground on the back surface. In this method, since there is no step of grinding off a part of the semiconductor wafer, even if the semiconductor wafer is thin, the above-described chipping of the semiconductor chip, the remaining of the cutting residue on the semiconductor chip, the adhesion of the chips to the semiconductor wafer, and the like are suppressed.
The method of dividing the semiconductor wafer at the modified layer formation site is suitable for the case where the semiconductor wafer is thin, and the semiconductor processing sheet of the present invention is suitable when the thin semiconductor chip obtained from the semiconductor wafer is picked up together with the film-like adhesive.
< substrate >
The constituent material of the base material is preferably various resins, and specific examples thereof include: polyethylene (low density polyethylene (sometimes abbreviated as LDPE), linear low density polyethylene (sometimes abbreviated as LLDPE), high density polyethylene (sometimes abbreviated as HDPE), etc.), polypropylene, polybutene, polybutadiene, polymethylpentene, styrene-ethylenebutylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, polyacrylic urethane, polyimide, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated product, modified product, crosslinked product, or copolymer of any of these resins, etc.
Among the above, Low Density Polyethylene (LDPE) is preferred.
In the present specification, "(meth) acrylic acid" means a concept including both "acrylic acid" and "methacrylic acid". Similarly, for example, "(meth) acrylate" means a concept including both "acrylate" and "methacrylate", and "(meth) acryl" means a concept including both "acryl" and "methacryl".
The number of the resins constituting the substrate may be only 1, or 2 or more, and in the case of 2 or more, the combination and ratio thereof may be arbitrarily selected.
The substrate may be composed of 1 layer (single layer) or 2 or more layers. When the substrate is composed of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effect of the present invention is not impaired.
In the present specification, the phrase "a plurality of layers may be the same or different from each other" means "all the layers may be the same, all the layers may be different, or only a part of the layers may be the same", and "the plurality of layers are different from each other" means "at least one of the constituent material and the thickness of each layer is different from each other".
The thickness of the base material can be suitably selected according to the purpose, and is preferably 50 to 300. mu.m, and more preferably 70 to 150. mu.m.
Here, the "thickness of the substrate" refers to the thickness of the entire substrate, and for example, the thickness of a substrate composed of a plurality of layers refers to the total thickness of all layers constituting the substrate.
In the present specification, "thickness" refers to a value obtained by measuring the thickness at any 5 locations by a contact thickness gauge and expressing the average.
In order to improve the adhesion to other layers such as an adhesive layer provided on the substrate, the surface of the substrate may be subjected to an embossing treatment such as a blast treatment or a solvent treatment, a corona discharge treatment, an electron beam irradiation treatment, a plasma treatment, an ozone/ultraviolet irradiation treatment, a flame treatment, a chromic acid treatment, a hot air treatment, or the like.
In addition, the surface of the substrate may be subjected to primer treatment.
The substrate may have a layer for preventing adhesion of the substrate to another sheet, adhesion of the substrate to an adsorption stage, or the like when the substrate is stored by superposing the antistatic coating layer and the semiconductor processing sheet.
< adhesive layer >
The pressure-sensitive adhesive layer preferably satisfies the following storage modulus condition and is non-energy-ray-curable.
In the present invention, "non-energy-ray-curable" refers to a property that does not cure even when irradiated with energy rays. In contrast, the property of curing by irradiation with energy rays is referred to as "energy ray curability".
In the present invention, the "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam, and examples thereof include ultraviolet rays, electron beams, and the like.
The ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, a light-emitting diode, or the like as an ultraviolet ray source. For the electron beam, for example, an electron beam generated by an electron beam accelerator or the like may be irradiated.
The pressure-sensitive adhesive layer may be only 1 layer (single layer), or may be a plurality of layers of 2 or more layers, and when the pressure-sensitive adhesive layer is a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.
The thickness of the adhesive layer may be suitably selected according to the purpose, and is preferably 1 to 100. mu.m, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm.
Here, the "thickness of the adhesive layer" refers to the thickness of the entire adhesive layer, and for example, the thickness of the adhesive layer composed of a plurality of layers refers to the total thickness of all the layers constituting the adhesive layer.
The pressure-sensitive adhesive layer to be used for obtaining the storage modulus may be a single-layer pressure-sensitive adhesive layer having a thickness of 200 μm, or may be a laminate obtained by laminating 2 or more pressure-sensitive adhesive layers having a thickness of less than 200 μm so that the total thickness becomes 200 μm.
In the present specification, the pressure-sensitive adhesive layer to be used for obtaining the storage modulus may be a single-layer pressure-sensitive adhesive layer or any of the above-described laminates, and may be abbreviated as "pressure-sensitive adhesive layer".
In the present specification, the terms "storage modulus of the pressure-sensitive adhesive layer" and "storage modulus of the laminate" as used herein mean "storage modulus of the pressure-sensitive adhesive layer before curing" and "storage modulus of the laminate before curing" respectively, unless otherwise specified, when the pressure-sensitive adhesive layer is curable.
The pressure-sensitive adhesive layer or the laminate has a storage modulus at 0 ℃ of 1000MPa or less, preferably 996MPa or less. When the storage modulus is not more than the upper limit, the semiconductor chip with the film-like adhesive is prevented from being swelled and scattered from the adhesive layer when the film-like adhesive is cut by spreading as described later.
The lower limit of the storage modulus at 0 ℃ of the pressure-sensitive adhesive layer or the laminate is not particularly limited, and may be, for example, 100MPa, 300MPa, or 500 MPa.
That is, in 1 aspect, the pressure-sensitive adhesive layer or the laminate has a storage modulus at 0 ℃ of 100 to 1000MPa, preferably 300 to 1000MPa, more preferably 500 to 996MPa, and particularly preferably 533 to 994 MPa.
In the present invention, the storage modulus (MPa) is determined by measuring the storage modulus (MPa) when the pressure-sensitive adhesive layer or the laminate to be measured is heated in a specific temperature range, for example, -50 ℃ to 50 ℃, at a temperature-raising rate of 10 ℃/min and a frequency of 11 Hz.
More specifically, the thickness of the pressure-sensitive adhesive layer was set to 200 μm, and the storage modulus (MPa) at 0 ℃ at the time of temperature rise under the conditions of a temperature rise rate of 10 ℃/min, a frequency of 11Hz, and a temperature of-50 to 50 ℃ was measured by a dynamic viscoelasticity measuring apparatus.
The storage modulus can be appropriately adjusted by, for example, adjusting the type and amount of the components contained in the pressure-sensitive adhesive layer.
For example, the storage modulus of the pressure-sensitive adhesive layer and the storage modulus of the laminate can be easily adjusted by adjusting the ratio of monomers constituting the pressure-sensitive adhesive resin described later, the blending amount of the crosslinking agent, the content of the filler, and the like.
However, these adjustment methods are merely examples.
The adhesive force of the adhesive layer in the semiconductor processing sheet of the present invention to a semiconductor wafer (adhesive force to a mirror surface of a semiconductor wafer) is 200mN/25mm or less, and preferably 196mN/25mm or less. By setting the adhesive force to be equal to or lower than the upper limit value, the semiconductor chip with the film-like adhesive can be easily picked up without curing the adhesive layer by irradiation of energy rays or the like, as will be described later.
The lower limit of the adhesive force of the adhesive layer to the semiconductor wafer is not particularly limited, and may be, for example, 10mN/25mm, 30mN/25mm, or 50mN/25 mm.
That is, in 1 aspect, the adhesive force of the adhesive layer in the semiconductor processing sheet of the present invention to a semiconductor wafer is 10 to 200mN/25mm, preferably 30 to 200mN/25mm, more preferably 50 to 196mN/25mm, and particularly preferably 55 to 194mN/25 mm.
In the present specification, the term "adhesive force of an adhesive layer to a semiconductor wafer" means "adhesive force of an adhesive layer before curing to a semiconductor wafer" when the adhesive layer is curable unless otherwise specified. Unless otherwise specified, the measurement of the adhesive force is a measurement of the adhesive force in a standard state defined in JIS Z02372008.
In the present invention, the above adhesive force (mN/25mm) can be measured by the following method. That is, the semiconductor processing sheet was fabricated to have a width of 25mm and a length of any desired length. Next, the semiconductor processing sheet is attached to a semiconductor wafer (i.e., a mirror surface of the semiconductor wafer) at normal temperature (e.g., 23 ℃) via an adhesive layer. Then, in this temperature state, so-called 180 ° peeling, in which the semiconductor processing sheet is peeled from the semiconductor wafer at a peeling speed of 300 mm/min so that the surfaces of the adhesive layer and the semiconductor wafer which are in contact with each other are at an angle of 180 ° with each other, is performed. The peel force at this time was measured, and the measured value was defined as the adhesive force (mN/25 mm). The length of the semiconductor processing sheet to be measured is not particularly limited as long as the peeling force can be stably measured. For example, the length of the semiconductor processing sheet to be measured may be 150 mm.
Examples of the semiconductor wafer include a silicon wafer and the like.
The adhesive strength of the adhesive layer to the semiconductor wafer can be appropriately adjusted by, for example, adjusting the type and amount of the components contained in the adhesive layer.
For example, the adhesive strength of the adhesive layer can be easily adjusted by adjusting the combination of monomers constituting the adhesive resin described later, the ratio of the monomers, the blending amount of the crosslinking agent, the content of the filler, and the like.
However, these adjustment methods are merely examples.
Even if semiconductor wafers such as silicon wafers are different in type or the same in type but different in production lot, the variation in adhesive force with the adhesive layer is small as long as the same adhesive layer is attached to the same portion. Therefore, the adhesive force of the adhesive layer can be accurately defined by selecting the semiconductor wafer as the object to be measured. In the present invention, by selecting as the adhesive layer an adhesive layer having an adhesive force of 200mN/25mm or less to the mirror surface of the semiconductor wafer, it is possible to suppress occurrence of process abnormality at the time of peeling and picking up the semiconductor chip with the film-like adhesive from the adhesive layer, to easily pick up the semiconductor chip, and to adjust the adhesive force of the adhesive layer to the film-like adhesive. The effects of the present invention as described above are exhibited by all film-like adhesives used in this field.
The adhesive layer may be formed of an adhesive composition containing an adhesive. For example, the pressure-sensitive adhesive layer can be formed on the target site by applying a pressure-sensitive adhesive composition to the surface to be formed of the pressure-sensitive adhesive layer and drying the composition as necessary. As for a more specific forming method of the adhesive layer, a detailed description is given later together with a forming method of other layers. The ratio of the contents of the components that do not vaporize at normal temperature in the adhesive composition is generally the same as the ratio of the contents of the components in the adhesive layer.
The adhesive composition may be applied by a known method, and examples thereof include a method using various coaters such as a knife coater, a bar coater, a gravure coater, a roll coater, a curtain coater, a die coater, a blade coater, a screen coater, a meyer bar coater, and a kiss coater.
The drying conditions of the pressure-sensitive adhesive composition are not particularly limited, and when the pressure-sensitive adhesive composition contains a solvent described later, it is preferably dried by heating, and in this case, for example, it is preferably dried at 70 to 130 ℃ for 10 seconds to 5 minutes.
[ adhesive composition ]
The adhesive composition is preferably non-energy-ray curable.
Examples of the non-energy-ray-curable adhesive composition include compositions containing an adhesive resin (hereinafter referred to as "adhesive resin (i)") such as an acrylic resin, a urethane resin, a rubber resin, a silicone resin, an epoxy resin, a polyvinyl ether, or a polycarbonate.
(adhesive resin (i))
The adhesive resin (i) is preferably the acrylic resin.
Examples of the acrylic resin in the adhesive resin (i) include an acrylic polymer having at least a structural unit derived from an alkyl (meth) acrylate.
The acrylic resin may have only 1 kind of structural unit, or 2 or more kinds of structural units, and when the number of structural units is 2 or more, the combination and ratio of these may be arbitrarily selected.
Here, "derived from" means that a chemical structure is changed as a result of performing polymerization.
Examples of the alkyl (meth) acrylate include alkyl (meth) acrylates in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms, and the alkyl group is preferably linear or branched.
More specifically, the alkyl (meth) acrylate includes: methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate (also known as lauryl (meth) acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (also known as myristyl (meth) acrylate), Pentadecyl (meth) acrylate, hexadecyl (meth) acrylate (palmityl (meth) acrylate), heptadecyl (meth) acrylate, octadecyl (meth) acrylate (also referred to as stearyl (meth) acrylate), nonadecyl (meth) acrylate, eicosyl (meth) acrylate, and the like.
Among the above, 2-ethylhexyl (meth) acrylate is preferable.
In order to improve the adhesive strength of the pressure-sensitive adhesive layer, the acrylic polymer preferably has a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms and the alkyl group. In addition, the number of carbon atoms of the alkyl group is preferably 4 to 12, more preferably 4 to 8, in view of further improving the adhesive strength of the adhesive layer. The alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms is preferably an alkyl acrylate.
Preferably, the acrylic polymer has a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth) acrylate.
Examples of the functional group-containing monomer include a monomer which can introduce an unsaturated group into a side chain of an acrylic polymer by reacting the functional group with a crosslinking agent described later to become a starting point of crosslinking and reacting the functional group with an unsaturated group in an unsaturated group-containing compound.
Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxyl group, an amino group, and an epoxy group.
That is, examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer.
Examples of the hydroxyl group-containing monomer include: hydroxyalkyl (meth) acrylates such as hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; and non (meth) acrylic unsaturated alcohols (unsaturated alcohols having no (meth) acryloyl skeleton) such as vinyl alcohol and allyl alcohol.
Among the above, 2-hydroxyethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate and the like are preferable.
Examples of the carboxyl group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids (dicarboxylic acids having an ethylenically unsaturated bond) such as fumaric acid, itaconic acid, maleic acid, and citraconic acid; anhydrides of the above ethylenically unsaturated dicarboxylic acids; and carboxyalkyl (meth) acrylates such as 2-carboxyethyl methacrylate.
The functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.
The functional group-containing monomer constituting the acrylic polymer may be 1 kind alone, or 2 or more kinds, and the combination and ratio thereof may be arbitrarily selected.
In the acrylic polymer, the content of the structural unit derived from the functional group-containing monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, and particularly preferably 5 to 30% by mass, based on the total amount (total mass) of the structural units constituting the acrylic polymer.
The acrylic polymer may have a structural unit derived from another monomer in addition to a structural unit derived from an alkyl (meth) acrylate and a structural unit derived from a functional group-containing monomer.
The other monomer is not particularly limited as long as it is a monomer copolymerizable with the alkyl (meth) acrylate and the like.
Examples of the other monomer include styrene, α -methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide.
The other monomers constituting the acrylic polymer may be only 1 type, or 2 or more types, and their combination and ratio may be arbitrarily selected.
The adhesive resin (i) other than the acrylic polymer preferably has a structural unit derived from a functional group-containing monomer, similarly to the acrylic polymer.
The adhesive resin (i) contained in the adhesive composition may be 1 type, or 2 or more types, and the combination and ratio thereof may be arbitrarily selected.
The content of the adhesive resin (i) is preferably 45 to 90 mass%, more preferably 55 to 87 mass%, even more preferably 65 to 84 mass%, and particularly preferably 72 to 81 mass% with respect to the total mass of the components other than the solvent constituting the adhesive composition (i.e., with respect to the total mass of the adhesive layer). When the content of the adhesive resin (i) is in such a range, the adhesiveness of the adhesive layer becomes better.
(crosslinking agent (ii))
The adhesive composition preferably contains a crosslinking agent (ii).
The crosslinking agent (ii) is, for example, a crosslinking agent that reacts with the functional groups to crosslink the adhesive resins (i) with each other.
Examples of the crosslinking agent (ii) include isocyanate-based crosslinking agents (i.e., crosslinking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (i.e., crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (i.e., crosslinking agents having an aziridinyl group), such as hexa [1- (2-methyl) -aziridinyl ] triphosphitriazine; a metal chelate-based crosslinking agent such as an aluminum chelate compound (i.e., a crosslinking agent having a metal chelate structure); an isocyanurate-based crosslinking agent (i.e., a crosslinking agent having an isocyanuric acid skeleton), and the like.
The crosslinking agent (ii) is preferably an isocyanate-based crosslinking agent, and examples thereof include a tolylene diisocyanate trimer adduct of trimethylolpropane, from the viewpoints of improving cohesive force of the pressure-sensitive adhesive and improving adhesive force of the pressure-sensitive adhesive layer, and easiness of obtaining.
The crosslinking agent (ii) contained in the adhesive composition may be 1 kind only, or 2 or more kinds, and when 2 or more kinds are contained, the combination and ratio thereof may be arbitrarily selected.
When the adhesive composition contains the crosslinking agent (ii), the content of the crosslinking agent (ii) in the adhesive composition is preferably 5 to 50 parts by mass, more preferably 10 to 45 parts by mass, and particularly preferably 15 to 40 parts by mass, based on 100 parts by mass of the content of the adhesive resin (i). On the other hand, the content of the crosslinking agent (ii) may be 22 to 38 parts by mass or 22.62 to 37.70 parts by mass with respect to 100 parts by mass of the content of the adhesive resin (i). By setting the content of the crosslinking agent (ii) to the lower limit or more, the effect of using the crosslinking agent (ii) can be more remarkably obtained. Further, by setting the content of the crosslinking agent (ii) to the upper limit or less, the adjustment of the adhesive strength of the adhesive layer to the film-like adhesive becomes easier.
(other additives)
The adhesive composition may contain other additives not included in any of the above components within a range not impairing the effects of the present invention.
Examples of the other additives include: known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, reaction retarders, and crosslinking accelerators (catalysts).
The "reaction retarder" is a substance that suppresses the progress of an unintended crosslinking reaction in the adhesive composition during storage, for example, by the action of a catalyst mixed into the adhesive composition. Examples of the reaction retarder include compounds that form chelate complexes by chelation with a catalyst, and more specifically, compounds having 2 or more carbonyl groups (-C (═ O) -) in 1 molecule.
The number of other additives contained in the adhesive composition may be only 1, or may be 2 or more, and when 2 or more, their combination and ratio may be arbitrarily selected.
The content of the other additives in the adhesive composition is not particularly limited, and may be appropriately selected depending on the kind thereof.
(solvent)
The adhesive composition may contain a solvent. The pressure-sensitive adhesive composition contains a solvent, thereby improving the suitability for application to a surface to be coated.
The solvent is preferably an organic solvent. Examples of the organic solvent include ketones such as methyl ethyl ketone and acetone; esters (e.g., carboxylic acid esters) such as ethyl acetate; tetrahydrofuran, di
Ethers such as alkanes; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol.
The solvent may be used as it is in the adhesive composition without removing the solvent used in the production of the adhesive resin (i) from the adhesive resin (i), or may be added separately from the solvent used in the production of the adhesive resin (i).
The amount of the solvent contained in the adhesive composition may be only 1, or 2 or more, and in the case of 2 or more, the combination and ratio thereof may be arbitrarily selected.
The content of the solvent in the adhesive composition is not particularly limited, and may be appropriately adjusted.
[ method for producing adhesive composition ]
The adhesive composition is obtained by blending the respective components for constituting the adhesive composition.
The order of addition of the components is not particularly limited, and 2 or more components may be added simultaneously.
When a solvent is used, the solvent may be mixed with any of the compounding ingredients other than the solvent to preliminarily dilute the compounding ingredients, or the solvent may be mixed with the compounding ingredients without preliminarily diluting any of the compounding ingredients other than the solvent.
The method of mixing the components at the time of blending is not particularly limited, and a method of mixing by rotating a stirrer, a stirring blade or the like; a method of mixing using a mixer; the method of mixing by applying ultrasonic waves is suitably selected from known methods.
The temperature and time for adding and mixing the components are not particularly limited as long as the components do not deteriorate, and may be appropriately adjusted, and the temperature is preferably 15 to 30 ℃.
Fig. 1 is a cross-sectional view schematically showing one embodiment of a semiconductor processing sheet of the present invention. In the drawings used in the following description, for the sake of easy understanding of the features of the present invention, a main part may be enlarged and the dimensional ratios of the components may not be substantially the same as those in reality.
The semiconductor processing sheet 1 shown in fig. 1 is a sheet in which an adhesive layer 12 is provided on a substrate 11. In the semiconductor processing sheet 1, the pressure-sensitive adhesive layer 12 is laminated on one surface 11a of the substrate 11.
The semiconductor processing sheet of the present invention is not limited to the semiconductor processing sheet shown in fig. 1, and a part of the structure of the semiconductor processing sheet shown in fig. 1 may be modified, removed, or added within a range not to impair the effects of the present invention.
< method for producing semiconductor processing sheet >)
The semiconductor processing sheet of the present invention can be produced by laminating an adhesive layer on a substrate. The adhesive layer is formed as described above.
For example, the semiconductor processing sheet is obtained by applying an adhesive composition to a release film, drying the adhesive composition as needed to form an adhesive layer on the release film in advance, and bonding an exposed surface of the formed adhesive layer on the opposite side to the side contacting the release film to one surface of a substrate. The release film can be removed at any time after the semiconductor processing sheet is obtained. The adhesive composition is preferably applied to the release-treated surface of the release film.
The semiconductor processing sheet is generally stored in a state where a release film is bonded to the surface of the outermost layer (i.e., the pressure-sensitive adhesive layer) on the opposite side of the substrate. Therefore, after the pressure-sensitive adhesive layer is formed on the release film by the above-described method, the pressure-sensitive adhesive layer may be bonded to the substrate without removing the release film.
< method for manufacturing semiconductor device >)
As a method for manufacturing a semiconductor device in the case of using the semiconductor processing sheet of the present invention, for example, a manufacturing method including the steps of: a step of providing a film-like adhesive on a surface of an adhesive layer formed in the semiconductor processing sheet, and providing a laminated structure of a plurality of divided semiconductor chips on a surface of the film-like adhesive opposite to a side on which the adhesive layer is provided (hereinafter, sometimes referred to simply as "laminated structure forming step"); a step of cutting the film-like adhesive by expanding the film-like adhesive in the laminated structure in a surface direction of the film-like adhesive while cooling the film-like adhesive (hereinafter, sometimes referred to simply as "cutting step"); and a step (hereinafter, sometimes simply referred to as "peeling step") of picking up (peeling) the semiconductor chip (i.e., the semiconductor chip with the film-like adhesive) including the cut film-like adhesive from the adhesive layer.
By using the semiconductor processing sheet of the present invention, in the cutting step, when the film-like adhesive is cut by the spread sheet of the semiconductor processing sheet, in other words, the spread sheet of the film-like adhesive, the semiconductor chip with the film-like adhesive can be prevented from being swollen and scattered from the adhesive layer. In the peeling step, the semiconductor chip with the film-like adhesive can be easily peeled and picked up from the adhesive layer without curing the adhesive layer by irradiation of energy rays or the like. In this way, when the semiconductor processing sheet of the present invention is used, the semiconductor chip with the film-like adhesive can be picked up without curing the adhesive layer, and therefore, the manufacturing process of the semiconductor device can be simplified.
The above-described manufacturing method is explained below with reference to fig. 2. Fig. 2 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor device in the case where the semiconductor processing sheet of the present invention is used. Here, a manufacturing method in the case of using the semiconductor processing sheet shown in fig. 1 will be described. In fig. 2, the same components as those shown in fig. 1 are denoted by the same reference numerals as those in fig. 1, and detailed description thereof will be omitted. Fig. 2 shows only a cross section of the semiconductor processing sheet, the film-like adhesive, and the semiconductor chip. The same applies to the figures subsequent to fig. 3.
< Process for Forming laminated Structure >
The laminated structure 101 shown in fig. 2 (a) is a laminated structure in which a film-like adhesive 9 is provided on a surface 12a (a surface opposite to the side provided with the base material of the adhesive layer 12) of the adhesive layer 12 of the semiconductor processing sheet 1, and a plurality of divided semiconductor chips 8 are provided on a surface 9a of the film-like adhesive 9 opposite to the side provided with the adhesive layer 12. The semiconductor processing sheet 1 is a semiconductor processing sheet of the present invention in which the pressure-sensitive adhesive layer 12 is laminated on the surface 11a of the base material 11.
Fig. 2 shows the gap (derived from the groove) between the plurality of semiconductor chips 8 with emphasis.
In the laminated structure forming step, for example, after 1 sheet of film-like adhesive 9 is attached to the back surface 8b (the surface of the semiconductor chip 8 opposite to the circuit forming surface) of the plurality of divided semiconductor chips 8, the adhesive layer 12 in the semiconductor processing sheet 1 of the present invention is attached to the surface 9b of the film-like adhesive 9 opposite to the side provided with the semiconductor chips 8, whereby the laminated structure 101 can be formed. The laminated structure can also be formed by attaching 1 sheet of film-like adhesive 9 to the surface 12a of the pressure-sensitive adhesive layer 12 in the semiconductor processing sheet 1 of the present invention, and then attaching the surface 9a of the film-like adhesive 9 opposite to the side provided with the pressure-sensitive adhesive layer 12 to the back surfaces 8b of the plurality of divided semiconductor chips 8.
The plurality of divided semiconductor chips 8 can be manufactured by forming grooves from the circuit forming surface (front surface) of the semiconductor wafer on the opposite side of the attachment surface (back surface) of the film-like adhesive 9, and polishing the back surface until the grooves are reached. Also, the grooves may be formed by knife cutting, laser cutting, water cutting, or the like.
Fig. 3 is a cross-sectional view schematically illustrating an embodiment of such a method for forming a groove in a semiconductor wafer to obtain a semiconductor chip.
In this method, as shown in fig. 3 (a), a groove 80 ' is formed in the semiconductor wafer 8 ' from one surface 8a ' serving as a circuit forming surface thereof by a method such as knife cutting, laser cutting, or water cutting.
Next, as shown in fig. 3 (b), a surface (back surface) 8b ' of the semiconductor wafer 8 ' opposite to the front surface (circuit forming surface) 8a ' is polished. The grinding of the back surface 8 b' can be performed by a known method using, for example, a grinder 62. As shown here, the back surface 8b ' is preferably polished by attaching a back surface polishing tape 63 to the front surface 8a ' of the semiconductor wafer 8 '.
Then, by polishing the rear surface 8b ' until reaching the grooves 80 ', a plurality of semiconductor chips 8 can be obtained from the semiconductor wafer 8 ', as shown in fig. 3 (c). The back surface 8b 'of the semiconductor wafer 8' is the back surface 8b of the semiconductor chip 8, i.e., the surface on which the film-like adhesive 9 is provided.
However, in the above-described method for manufacturing a semiconductor device, it is preferable to adopt a method of forming a modified layer in a semiconductor wafer and dividing the semiconductor wafer at a portion where the modified layer is formed, as described above, instead of a method of cutting off a part of the semiconductor wafer.
That is, the method for manufacturing a semiconductor device preferably further includes, before the step of forming the laminated structure: a step of irradiating a laser beam in an infrared region so as to converge at a focal point set in a semiconductor wafer to form a modified layer in the semiconductor wafer (hereinafter, sometimes referred to simply as "modified layer forming step"); and a step (hereinafter, sometimes simply referred to as "dividing step") of dividing the semiconductor wafer at the site of the modified layer by polishing a surface on which the film-like adhesive is provided in the semiconductor wafer on which the modified layer is formed and applying a force during polishing to the semiconductor wafer to obtain a plurality of semiconductor chips, wherein the plurality of semiconductor chips obtained in the dividing step are used in the laminated structure forming step.
Fig. 4 is a sectional view schematically illustrating an embodiment of the method for forming a modified layer on a semiconductor wafer to obtain a semiconductor chip.
< modified layer Forming step >
In this method, in the modified layer forming step, as shown in fig. 4 (a), laser light in the infrared region is irradiated so as to be focused on a focal point provided inside the semiconductor wafer 8 ', thereby forming a modified layer 81 ' inside the semiconductor wafer 8 '.
In the modified layer forming step, for example, the laser beam having a large opening (NA) is preferably irradiated to form the modified layer 81 'while minimizing damage to the surface of the semiconductor wafer 8' and the region near the surface by the irradiation of the laser beam.
< dividing step >
Next, in the dividing step, as shown in fig. 4 (b), a surface (back surface) 8b ' of the semiconductor wafer 8 ' opposite to the front surface (circuit forming surface) 8a ' is polished. The polishing at this time can be performed by the same method as the polishing of the back surface of the semiconductor wafer in which the grooves are formed, which has been described with reference to fig. 3. For example, the back surface 8b ' is preferably polished by attaching a back surface polishing tape 63 to the front surface 8a ' of the semiconductor wafer 8 '.
Then, the rear surface 8b 'of the semiconductor wafer 8' is polished, and the semiconductor wafer 8 'being polished is further subjected to a force during polishing, whereby the semiconductor wafer 8' is divided at the formation site of the modified layer 81 ', and a plurality of semiconductor chips 8 are obtained from the semiconductor wafer 8', as shown in fig. 4 (c). In this case as well, the rear surface 8b 'of the semiconductor wafer 8' is the rear surface 8b of the semiconductor chip 8, i.e., the surface on which the film-like adhesive 9 is provided, as in the case described with reference to fig. 3.
In any of the above methods, when the back surface polishing tape 63 is used, the obtained plurality of semiconductor chips 8 are held in a state of being aligned on the back surface polishing tape 63.
The thickness of the semiconductor chip 8 is not particularly limited, but is preferably 5 to 60 μm, and more preferably 10 to 55 μm. When such a thin semiconductor chip is used, the effect obtained when the semiconductor processing sheet of the present invention is used can be more remarkably obtained.
In the above-described method for manufacturing a semiconductor device, the film-like adhesive 9 may be a known adhesive, and examples thereof include an adhesive having a curing property, preferably a thermosetting adhesive, and preferably an adhesive having a pressure-sensitive adhesive property. The film-like adhesive 9 having both thermosetting property and pressure-sensitive adhesive property can be attached to various adherends by lightly pressing the film-like adhesive in an uncured state. The film-like adhesive 9 may be an adhesive that can be attached to various adherends by softening it by heating. The film-like adhesive 9 is finally cured to a cured product having high impact resistance, and the cured product can maintain sufficient adhesive properties even under severe high-temperature and high-humidity conditions.
The thickness of the film-like adhesive 9 is not particularly limited, but is preferably 1 to 50 μm, more preferably 3 to 40 μm. By setting the thickness of the film-like adhesive 9 to the lower limit or more, a high adhesion to an adherend (semiconductor chip) can be obtained. Further, by setting the thickness of the film-like adhesive 9 to the upper limit or less, the film-like adhesive 9 can be cut more easily by a spreading sheet described later.
< cutting step >
In the cutting step, after the laminated structure forming step, as shown in fig. 2 (b), the film-like adhesive 9 of the laminated structure 101 is cooled, and the film-like adhesive 9 is spread along the direction of the surface 9a of the film-like adhesive 9 (the direction indicated by the arrow I in fig. 2 (b), that is, the horizontal direction with respect to the surface of the film-like adhesive 9), and the film-like adhesive 9 is cut. The film-like adhesive 9 may be spread together with the base material 11 and the pressure-sensitive adhesive layer 12 (i.e., the semiconductor processing sheet 1). Here, the film-like adhesive after cutting is denoted by reference numeral 9 ', and such a film-like adhesive 9 ' after cutting may be simply referred to as "film-like adhesive 9 '". The direction of expansion of the film adhesive 9 is indicated by an arrow I.
The cooling temperature of the film-like adhesive 9 in the cutting step is not particularly limited, but is preferably-15 to 3 ℃ in order to facilitate cutting of the film-like adhesive 9.
The speed (expansion speed) of the film-like adhesive 9 in the cutting step is not particularly limited as long as the effect of the present invention is not impaired, but is preferably 0.5 to 100mm/sec, more preferably 0.5 to 60mm/sec, and may be, for example, 1 to 50 mm/sec. By setting the speed of the expanding to such a range, the effect of the present invention can be more remarkably obtained. Further, by setting the speed of spreading to the upper limit or less, the semiconductor chip 8 is less likely to be damaged when the film-like adhesive 9 is spread.
In the cutting step, by using the sheet 1 for semiconductor processing, the semiconductor chip 8 can be prevented from being swollen and scattered from the adhesive layer 12 in a state where the film-like adhesive 9' after cutting is provided on the back surface 8 b.
On the other hand, fig. 5 is a cross-sectional view schematically showing a state of a semiconductor chip when a film-like adhesive is spread in a case where a conventional semiconductor processing sheet is used.
When the adhesive layer 72 shown here is a conventionally used adhesive layer and a semiconductor processing sheet 7 in which the adhesive layer 72 is provided on the base material 11 is used, the semiconductor chip 8 provided with the film-like adhesive 9' after cutting may bulge from the adhesive layer 72 or be peeled off and scattered from the adhesive layer 72. Such swelling and scattering of the semiconductor chip with the film-like adhesive can be typically seen when the storage modulus at 0 ℃ of the pressure-sensitive adhesive layer having a thickness of 200 μm described above is less than 1000 MPa.
In addition, such swelling and scattering of the semiconductor chip with the film-like adhesive are likely to occur when the thickness of the semiconductor chip 8 is thin.
< stripping Process >
In the peeling step, after the cutting step, as shown in fig. 2(c), the semiconductor chip 8 and the cut film-like adhesive 9' attached thereto are peeled from the semiconductor processing sheet 1 (adhesive layer 12) and picked up.
In the peeling step, the semiconductor chip 8 is pulled by the pulling portion 61 of the manufacturing apparatus of the semiconductor device, and the film-like adhesive 9' after cutting, which is attached to the back surface 8b of the semiconductor chip 8, is peeled from the pressure-sensitive adhesive layer 12. As a method for pulling up the semiconductor chip 8, a known method can be used, and for example, a method for pulling up by sucking up the surface of the semiconductor chip 8 with a vacuum collet can be mentioned. Here, the pulling direction of the semiconductor chip 8 is indicated by an arrow II.
In the peeling step, by using the semiconductor processing sheet 1, the semiconductor chip 8 can be easily peeled and picked up from the adhesive layer 12 together with the cut film-like adhesive 9' (semiconductor chip with film-like adhesive) without curing the adhesive layer 12 by energy ray irradiation or the like.
On the other hand, fig. 6 is a cross-sectional view schematically showing a state in which an attempt is made to pick up a semiconductor chip with a film-like adhesive in the case of using a conventional semiconductor processing sheet.
In fig. 6(a), when the semiconductor chip 8 is pulled up in the same manner as in fig. 2(c), the film-like adhesive 9 'after cutting is peeled off from the semiconductor chip 8, and when the film-like adhesive 9' after cutting is laminated on the pressure-sensitive adhesive layer 72, only the semiconductor chip 8 is pulled up.
On the other hand, fig. 6 (b) shows a state in which the semiconductor chip 8 is stacked on the adhesive layer 72 with the film-like adhesive 9' after cutting, and the semiconductor chip 8 cannot be pulled up, when the semiconductor chip 8 is pulled up as in the case of fig. 2 (c).
The process abnormalities shown in fig. 6(a) and 6 (b) are typically observed when the adhesive force of the adhesive layer 72 to the semiconductor wafer exceeds a large value of 200mN/25 mm. The state of fig. 6(a) is likely to occur when the adhesive force of the film-like adhesive 9 'to the semiconductor wafer is small, and the state of fig. 6 (b) is likely to occur when the adhesive force of the film-like adhesive 9' to the semiconductor wafer is large.
In the above-described method for manufacturing a semiconductor device, the semiconductor chip 8 (semiconductor chip with film-like adhesive) peeled (picked up) together with the film-like adhesive 9' after cutting is used, and then the semiconductor device is manufactured by the same method as the conventional method. For example, the semiconductor chip 8 is die-bonded to the circuit surface of the substrate with a film adhesive 9', and if necessary, 1 or more semiconductor chips are further stacked on the semiconductor chip 8, and wire-bonded, and then the whole is sealed with a resin to form a semiconductor package (not shown). Then, the semiconductor package is used to manufacture a target semiconductor device.
The method for manufacturing a semiconductor device using the semiconductor processing sheet of the present invention is not limited to the method described above with reference to fig. 2, and a part of the structure may be modified, removed, or added to the method within a range not to impair the effects of the present invention.
The process abnormality described with reference to fig. 5 to 6 is an example, and other process abnormalities may occur in some cases.
In contrast, when the semiconductor processing sheet of the present invention is used, the occurrence of such process abnormalities can be suppressed, and as a result, a semiconductor device can be manufactured by a method simpler than the conventional one at a lower cost.
In 1 aspect of the semiconductor processing sheet according to one embodiment of the present invention,
the following semiconductor processing sheets can be mentioned:
which is a semiconductor processing sheet having an adhesive layer on a base material,
the pressure-sensitive adhesive layer is formed from a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin (i) and a crosslinking agent (ii);
the adhesive resin (i) is an acrylic polymer having at least a structural unit derived from an alkyl (meth) acrylate, preferably an acrylic polymer having at least 1 structural unit selected from a structural unit derived from 2-ethylhexyl (meth) acrylate, a structural unit derived from 2-hydroxyethyl (meth) acrylate, and a structural unit derived from 4-hydroxybutyl (meth) acrylate;
the crosslinking agent (ii) is an isocyanate-based crosslinking agent, preferably a tolylene diisocyanate trimer adduct of trimethylolpropane;
the content of the adhesive resin (i) is 45 to 90 mass%, preferably 55 to 87 mass%, more preferably 65 to 84 mass%, and particularly preferably 72 to 81 mass% with respect to the total mass of the adhesive layer;
the content of the crosslinking agent (ii) is 5 to 50 parts by mass, preferably 10 to 45 parts by mass, more preferably 15 to 40 parts by mass, and particularly preferably 22 to 38 parts by mass, relative to 100 parts by mass of the content of the adhesive resin (i);
when the thickness of the pressure-sensitive adhesive layer is 200 μm, the pressure-sensitive adhesive layer having a thickness of 200 μm has a storage modulus at 0 ℃ of 100MPa to 1000MPa, preferably 300MPa to 1000MPa, more preferably 500MPa to 996MPa, and particularly preferably 533MPa to 994 MPa;
when the semiconductor processing sheet is attached to a mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 10 to 200mN/25mm, preferably 30 to 200mN/25mm, more preferably 50 to 196mN/25mm, and particularly preferably 55 to 194mN/25 mm.
In another aspect of the semiconductor processing sheet according to the embodiment of the present invention,
the following semiconductor processing sheets can be mentioned:
which is a semiconductor processing sheet having an adhesive layer on a base material,
the pressure-sensitive adhesive layer is formed from a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin (i) and a crosslinking agent (ii);
the adhesive resin (i) is an acrylic polymer having at least 1 structural unit selected from a structural unit derived from 2-ethylhexyl (meth) acrylate and a structural unit derived from 2-hydroxyethyl (meth) acrylate;
the crosslinking agent (ii) is a tolylene diisocyanate trimer adduct of trimethylolpropane;
the content of the adhesive resin (i) is 76 to 81 mass%;
the content of the crosslinking agent (ii) is 22 to 31 parts by mass relative to 100 parts by mass of the content of the adhesive resin (i);
when the thickness of the adhesive layer is 200 μm, the storage modulus of the adhesive layer with the thickness of 200 μm at 0 ℃ is 533MPa to 873 MPa;
when the semiconductor processing sheet is attached to the mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 94-194 mN/25 mm.
In another aspect of the semiconductor processing sheet according to the embodiment of the present invention,
the following semiconductor processing sheets can be mentioned:
which is a semiconductor processing sheet having an adhesive layer on a base material,
the pressure-sensitive adhesive layer is formed from a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin (i) and a crosslinking agent (ii);
the adhesive resin (i) is an acrylic polymer having at least 1 structural unit selected from a structural unit derived from 2-ethylhexyl (meth) acrylate and a structural unit derived from 4-hydroxybutyl (meth) acrylate;
the crosslinking agent (ii) is a tolylene diisocyanate trimer adduct of trimethylolpropane;
the content of the adhesive resin (i) is 70 to 75 mass%;
the content of the crosslinking agent (ii) is 35 to 39 parts by mass relative to 100 parts by mass of the content of the adhesive resin (i);
when the thickness of the adhesive layer is 200 μm, the storage modulus of the adhesive layer with the thickness of 200 μm at 0 ℃ is 500MPa to 994 MPa;
when the semiconductor processing sheet is attached to the mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 50-60 mN/25 mm.
[ examples ]
The present invention will be described in detail below with reference to specific examples. However, the present invention is not limited to the examples shown below.
In the following, the unit "msec" of time is "millisecond".
The components used for producing the adhesive composition are shown below.
Adhesive resin
Adhesive resin (i) -1: an acrylic polymer (weight-average molecular weight 860000, glass transition temperature-61 ℃) obtained by copolymerizing 2-ethylhexyl acrylate (hereinafter abbreviated as "2 EHA") (80 parts by mass) and 2-hydroxyethyl acrylate (hereinafter abbreviated as "HEA") (20 parts by mass).
Adhesive resin (i) -2: an acrylic polymer (weight-average molecular weight of 430000, glass transition temperature of-63 ℃ C.) obtained by copolymerizing 2EHA (80 parts by mass) and 4-hydroxybutyl acrylate (hereinafter abbreviated as "4 HBA") (20 parts by mass).
Adhesive resin (i) -3: an acrylic polymer (weight-average molecular weight 430000, glass transition temperature-31 ℃ C.) obtained by copolymerizing 2EHA (60 parts by mass), methyl methacrylate (hereinafter abbreviated as "MMA") (30 parts by mass), and HEA (10 parts by mass).
Adhesive resin (i) -4: an acrylic polymer (weight-average molecular weight 720000, glass transition temperature-27 ℃) obtained by copolymerizing lauryl acrylate (hereinafter abbreviated as "LA") (80 parts by mass) and HEA (20 parts by mass).
Crosslinking agents
Crosslinking agent (ii) -1: trimethylol propane tolylene diisocyanate trimer adduct (Tosoh CORPORATION, "Coronate L")
Photopolymerization initiator
Photopolymerization initiator (iii) -1: 1-Hydroxycyclohexyl phenyl ketone (Irgacure (registered trademark) 184, manufactured by BASF corporation) "
[ example 1]
< production of semiconductor processing sheet >
(production of adhesive composition)
The crosslinking agent (ii) -1(30.16 parts by mass) was added to the adhesive resin (i) -1(100 parts by mass), and the mixture was stirred at 23 ℃ to obtain a non-energy-ray-curable adhesive composition.
All the blending parts shown herein are equivalent values of solid content.
Table 1 shows the respective components and their amounts. In table 1, the column "-" in the column of the components to be blended means that the components are not blended.
(production of semiconductor processing sheet)
The adhesive composition obtained above was applied to the release-treated surface of a release film (made by LINTEC Corporation, "SP-PET 381031" having a thickness of 38 μm) which had been release-treated on one surface of a polyethylene terephthalate film by a silicone treatment, and dried by heating at 120 ℃ for 2 minutes, thereby forming an adhesive layer having a thickness of 10 μm.
Next, a Low Density Polyethylene (LDPE) film having a thickness of 110 μm as a base material was adhered to the exposed surface of the pressure-sensitive adhesive layer, thereby obtaining a semiconductor processing sheet provided with a release film.
< evaluation of semiconductor processing sheet >
(effect of suppressing the swelling/flying of semiconductor chip with film-shaped adhesive)
The following half-cut cuts were performed: a mirror surface of an 8-inch silicon wafer (thickness 720 μm) was cut with a dicing blade to a depth of 80 μm from the surface thereof to form a groove so as to draw a square having a size of 10mm × 10mm using a dicing device ("DFD 6361" manufactured by DISCO Corporation). At this time, "27 HECC" manufactured by DISCO Corporation was used as a cutter, and the moving speed of the cutter was 50mm/sec and the rotational speed was 40000 rpm.
Subsequently, a back surface grinding tape ("ADWILLE-3125 KN" manufactured by LINEC Corporation) was attached to the mirror surface of the silicon wafer having the above-described grooves formed thereon by means of its adhesive layer at normal temperature (23 ℃) using a tape laminating machine ("RAD-3510" manufactured by LINEC Corporation).
Next, the surface of the silicon wafer opposite to the mirror surface on which the grooves were formed was polished by a grinder (DFG 8760 manufactured by DISCO corporation). At this time, the silicon wafer was polished so that the thickness of the silicon wafer became 50 μm, and the silicon wafer was divided and separated into silicon chips. The resulting silicon chips were spaced apart from each other at an interval of about 30 μm and fixed on a back-grinding tape.
Subsequently, a film-like adhesive (ADWILLLE 61-25 ″, manufactured by linec Corporation, having a thickness of 25 μm) heated to 60 ℃ was applied to the polished surface of the obtained silicon chip, and the obtained semiconductor processing sheet was applied to the film-like adhesive at normal temperature (23 ℃) by means of the adhesive layer thereof, to obtain a laminate.
Next, the resulting laminate was affixed and fixed to a dicing ring frame via the exposed surface of the pressure-sensitive adhesive layer, and the back surface polishing tape was peeled off from the silicon chip, thereby obtaining a test piece of the following laminate structure: an uncut film-like adhesive is laminated on the adhesive layer of a semiconductor processing sheet having the adhesive layer on a base material, and a plurality of semiconductor chips that have been previously singulated are arranged in a row on the film-like adhesive.
The test piece obtained above was set on a piece-expanding unit of a piece-expander (ME-300B manufactured by JCM), and a piece for semiconductor processing and a film-like adhesive were expanded under conditions of a piece-expanding amount (expanding amount) of 10mm and a piece-expanding speed (expanding speed) of 10mm/sec in an environment of 0 ℃, and the film-like adhesive was cut along the outer shape of a silicon chip. That is, the semiconductor processing sheet obtained as described above is used as an extension sheet.
Next, the presence or absence of bulging and scattering from the adhesive layer was confirmed visually for the cut silicon chips (semiconductor chips with film-like adhesive) having the film-like adhesive, and when none of these abnormalities was observed, the effect of suppressing bulging/scattering was judged as being acceptable (a), and even when some of these abnormalities were observed, the effect of suppressing bulging/scattering was judged as being unacceptable (B). The results are shown in the column of "suppression of the swelling/scattering of the semiconductor chip" in table 1.
(suitability for pickup of semiconductor chip with film-like adhesive)
The semiconductor chip with the film-like adhesive, for which no abnormality was observed after the "effect of suppressing the swelling/scattering of the semiconductor chip with the film-like adhesive" was evaluated, was picked up 30 times by the 1-pin push-up method under the conditions of the push-up amount of 200 μm, the push-up speed of 20mm/sec, and the lift-up waiting time of 300msec using a pick-up/die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery inc. Then, when all of the 30 times of picking are successful, the picking suitability is determined as a pass (a), and when the picking is failed 1 or more times, the picking suitability is determined as a fail (B). The results are shown in the column of "pickup suitability" in table 1.
(storage modulus of laminate comprising adhesive layer)
Using the semiconductor processing sheet obtained above, a laminate was produced in which a plurality of pressure-sensitive adhesive layers from which the base material was peeled were laminated so that the total thickness became 200 μm. Then, the storage modulus (MPa) of the laminate at 0 ℃ was measured using a dynamic viscoelasticity measuring apparatus ("DMAQ 800" manufactured by TA instruments) under conditions of a temperature rise rate of 10 ℃/min, a frequency of 11Hz, and a temperature of-50 to 50 ℃. The results are shown in the column of "storage modulus" in table 1.
(adhesive force of adhesive layer)
The semiconductor processing sheet obtained above was cut into a size of 25mm × 150mm, and adhered to the mirror surface of a silicon wafer at room temperature (23 ℃ C.) with the adhesive layer. Then, the semiconductor processing sheet under the temperature condition was subjected to so-called 180 ° peeling at a peeling speed of 300 mm/min so that the surfaces of the pressure-sensitive adhesive layer and the silicon wafer which were in contact with each other were at an angle of 180 °, and the peeling force at that time was measured and the measured value was regarded as the adhesive strength (mN/25 mm). The results are shown in the column of "adhesive force" in table 1.
Examples 2 to 4 and comparative examples 1 to 3
< production and evaluation of semiconductor processing sheet >
Semiconductor processing sheets were produced and evaluated in the same manner as in example 1, except that the compounding ingredients and the compounding amounts thereof in the production of the adhesive composition were as shown in table 1. The results are shown in Table 1.
In comparative example 3, the pressure-sensitive adhesive layer was clearly energy ray (ultraviolet ray) -curable even from the content of the pressure-sensitive adhesive composition, but was not cured by irradiation with energy rays during the evaluation period from the formation of the pressure-sensitive adhesive layer to the semiconductor processing sheet.
[ Table 1]
As is clear from the above results, in examples 1 to 4, the storage modulus of the laminate at 0 ℃ was 994MPa or less, and when the film-like adhesive was cut by spreading, the swelling and scattering of the semiconductor chip self-adhesive layer with the film-like adhesive were completely suppressed. The adhesive force of the adhesive layer to the semiconductor wafer is 194mN/25mm or less, and the semiconductor chip with the film-like adhesive has excellent pickup suitability even if curing by energy ray irradiation or the like is not performed.
In contrast, in comparative examples 1 and 2, the storage modulus of the laminate at 0 ℃ was 1218MPa or more, and the swelling and scattering of the semiconductor chip with the film-like adhesive were not suppressed.
In comparative example 3, the adhesive strength of the adhesive layer to the semiconductor wafer was 534mN/25mm, and the pickup suitability of the semiconductor chip with the film adhesive was poor.
Here, in the evaluation of the above-described effect of suppressing the bulge/scattering, a silicon chip obtained by half-dicing a silicon wafer using a dicing blade was used. However, similar evaluation results can be obtained even when a silicon chip obtained by using a method of forming a modified layer in the interior of a semiconductor wafer (silicon wafer) as described above, for example, is used instead of such a method of forming a groove in a silicon wafer. This is because the method for manufacturing the semiconductor chip (the method for dividing the semiconductor wafer) does not affect the above-described evaluation process as long as the semiconductor chip used for the evaluation has no abnormality.
Industrial applicability
The present invention is useful for manufacturing a semiconductor device, and is therefore industrially very useful.
Claims (2)
1. A sheet for semiconductor processing, which comprises an adhesive layer on a base material and has the following characteristics:
when the thickness of the adhesive layer is 200 μm, the storage modulus of the adhesive layer with the thickness of 200 μm at 0 ℃ is 1000MPa or less, and
when the semiconductor processing sheet is attached to a mirror surface of a semiconductor wafer, the adhesive force of the adhesive layer to the mirror surface is 200mN/25mm or less,
the adhesive layer is non-energy-ray curable,
the storage modulus is determined as follows: the storage modulus at 0 ℃ when the temperature is raised under the conditions of a temperature rise rate of 10 ℃/min, a frequency of 11Hz, and a temperature of-50 to 50 ℃ is measured by a dynamic viscoelasticity measuring apparatus with the thickness of the adhesive layer set to 200 μm,
the adhesion was determined as follows: the above-mentioned semiconductor processing sheet having a width of 25mm and an arbitrary length was prepared, and then the semiconductor processing sheet was attached to a semiconductor wafer, that is, a mirror surface of the semiconductor wafer via an adhesive layer at normal temperature, and then, in this temperature state, so-called 180 ° peeling was performed in which the semiconductor processing sheet was peeled from the semiconductor wafer at a peeling speed of 300 mm/min so that surfaces where the adhesive layer and the semiconductor wafer were in contact with each other were at an angle of 180 °, and the peeling force at this time was measured, and the measured value was used as the above-mentioned adhesive force.
2. The sheet for semiconductor processing according to claim 1, further comprising a film-like adhesive on the pressure-sensitive adhesive layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011446311.2A CN112694840A (en) | 2016-03-30 | 2017-03-22 | Semiconductor processing sheet |
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| JP2016-069603 | 2016-03-30 | ||
| JP2016069603 | 2016-03-30 | ||
| PCT/JP2017/011377 WO2017170021A1 (en) | 2016-03-30 | 2017-03-22 | Semiconductor processing sheet |
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| CN202011446311.2A Division CN112694840A (en) | 2016-03-30 | 2017-03-22 | Semiconductor processing sheet |
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| JP (1) | JP6883019B2 (en) |
| KR (1) | KR102313586B1 (en) |
| CN (2) | CN109005665B (en) |
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| JP7035347B2 (en) | 2017-10-05 | 2022-03-15 | 昭和電工マテリアルズ株式会社 | Semiconductor processing tape |
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| JP7067904B2 (en) * | 2017-11-16 | 2022-05-16 | リンテック株式会社 | Manufacturing method of semiconductor device |
| JP7174518B2 (en) * | 2017-11-16 | 2022-11-17 | リンテック株式会社 | Semiconductor device manufacturing method |
| KR20210141490A (en) | 2019-03-15 | 2021-11-23 | 린텍 가부시키가이샤 | Manufacturing method of film-form baking material with a support sheet, a roll body, a laminated body, and an apparatus |
| WO2020241407A1 (en) * | 2019-05-24 | 2020-12-03 | リンテック株式会社 | Film-like firing material with support sheet, roll body, multilayer body and method for producing device |
| WO2022210154A1 (en) * | 2021-04-01 | 2022-10-06 | 東レ株式会社 | Laminate and manufacturing method of semiconductor device |
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| WO2017170021A1 (en) | 2017-10-05 |
| CN109005665A (en) | 2018-12-14 |
| CN112694840A (en) | 2021-04-23 |
| JP6883019B2 (en) | 2021-06-02 |
| TW201802903A (en) | 2018-01-16 |
| KR20180127984A (en) | 2018-11-30 |
| KR102313586B1 (en) | 2021-10-15 |
| TWI719178B (en) | 2021-02-21 |
| SG11201808291YA (en) | 2018-10-30 |
| JPWO2017170021A1 (en) | 2019-02-14 |
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