CN108713241B - Dicing die bonding sheet, method for manufacturing semiconductor chip, and method for manufacturing semiconductor device - Google Patents
Dicing die bonding sheet, method for manufacturing semiconductor chip, and method for manufacturing semiconductor device Download PDFInfo
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- CN108713241B CN108713241B CN201780015580.3A CN201780015580A CN108713241B CN 108713241 B CN108713241 B CN 108713241B CN 201780015580 A CN201780015580 A CN 201780015580A CN 108713241 B CN108713241 B CN 108713241B
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- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
Abstract
The invention provides a dicing die-bonding sheet (101) comprising a base material (11) and a pressure-sensitive adhesive layer (12) and a film-like adhesive (13) on the pressure-sensitive adhesive layer (12), wherein the pressure-sensitive adhesive layer (12) has a thickness of 20 to 50 [ mu ] m and the pressure-sensitive adhesive layer (12) has an elongation at break of 5 to 50%. A method for manufacturing a semiconductor chip (9) by forming an intermediate structure on a 1 st surface (13 a) of a film-like adhesive (13) of a dicing die bonding sheet (101) on which a semiconductor wafer is provided, and forming a notch (10) reaching an adhesive layer (12) but not reaching a base material (11) from the surface of the semiconductor wafer on the intermediate structure using a dicing blade, thereby dividing the semiconductor wafer.
Description
Technical Field
The present invention relates to a dicing die bonding sheet, a method for manufacturing a semiconductor chip, and a method for manufacturing a semiconductor device.
The present application claims priority based on Japanese patent application No. 2016-046904 filed in Japan on 10/3/2016, and the contents are incorporated herein by reference.
Background
The dicing die-bonding sheet is configured by, for example, sequentially providing an adhesive layer and a film-like adhesive on a base material, and is used by being attached to a semiconductor wafer with the film-like adhesive. The semiconductor wafer fixed to the dicing die bonding sheet is divided into individual semiconductor chips by dicing together with the adhesive layer and the film-like adhesive. Thereafter, for example, when the adhesive layer is curable, the adhesive layer is cured in advance to reduce the adhesiveness, and the semiconductor chip provided with the cut film-like adhesive is peeled off from the cured adhesive layer and picked up. The picked-up semiconductor chip is die-bonded to the circuit surface of the substrate with a film-like adhesive, 1 or more other semiconductor chips are further stacked on the semiconductor chip as necessary, and after wire bonding, the whole is sealed with a resin. Using the semiconductor package thus obtained, the target semiconductor device is finally manufactured.
Dicing is performed by cutting into a semiconductor wafer using a dicing blade while rotating the dicing blade. However, in this dicing method, at least a part of the semiconductor wafer and the dicing die bonding sheet is cut by the dicing blade, and therefore, chips are generated. Although the dicing is performed while cleaning the cut portion with water, the cutting chips cannot be completely washed away, and therefore, if the amount of the cutting chips is large, a part of the cutting chips adheres to the obtained semiconductor chip after dicing and the cut film-like adhesive provided in the semiconductor chip, and tends to remain. However, if the cut chips remain in the semiconductor chip provided with the film-like adhesive after cutting, the semiconductor chip may not be picked up normally. That is, if the amount of chips generated during cutting is large, a pickup failure may occur.
On the other hand, as a member capable of suppressing adhesion of chips to semiconductor chips when dicing a semiconductor wafer using a dicing blade, there is disclosed an adhesive tape for fixing a semiconductor wafer, which comprises a radiation-curable acrylic adhesive layer made of an adhesive having a storage modulus at 60 to 100 ℃ in a specific range on a base film (see patent document 1). This adhesive tape corresponds to a dicing sheet, and a film-like adhesive (i.e., a die bonding film) is further provided on the adhesive layer of the adhesive tape and used for dicing.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2007-027215
Disclosure of Invention
Problems to be solved by the invention
However, patent document 1 discloses that the use of the dicing sheet (i.e., the adhesive tape for fixing a semiconductor wafer) described in the above document can suppress the generation of chips when dicing is performed using a dicing blade, but does not disclose the pick-up adaptability of a semiconductor chip provided with a film-like adhesive.
Accordingly, an object of the present invention is to provide a dicing die-bonding sheet capable of reducing the amount of cutting chips generated when dicing a semiconductor wafer with a dicing blade and suppressing the occurrence of picking up failure of a semiconductor chip provided with a film-like adhesive, a method for manufacturing a semiconductor chip using the dicing die-bonding sheet, and a method for manufacturing a semiconductor device.
Means for solving the problems
In order to solve the above problems, the present invention provides a dicing die-bonding sheet comprising a base material and a film-like adhesive provided on the adhesive layer, wherein the adhesive layer has a thickness of 20 to 50 μm and an elongation at break of 5 to 50%.
In the dicing die-bonding sheet of the present invention, the adhesive layer is preferably non-energy-ray-curable.
In the dicing die-bonding sheet of the present invention, the adhesive force of the adhesive layer to the film-like adhesive is preferably 35mN/25mm to 300mN/25mm.
The present invention also provides a method for manufacturing a semiconductor chip using the dicing die-bonding sheet, the method comprising the steps of: forming an intermediate structure in which a semiconductor wafer is provided on a surface of the film-like adhesive on the dicing die-bonding sheet opposite to a side on which the adhesive layer is provided; and forming a notch on the intermediate structure from the surface of the semiconductor wafer to the adhesive layer but not to the base material by using a dicing blade, thereby dividing the semiconductor wafer to form semiconductor chips.
Further, the present invention provides a method for manufacturing a semiconductor device, the method comprising, after the step of forming the semiconductor chip by the method for manufacturing a semiconductor chip, the steps of: and a step of peeling the semiconductor chip together with the cut film-like adhesive from the adhesive layer while applying a force from the base material side to the cut die bonding sheet on which the cut is formed.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, there are provided a dicing die-bonding sheet capable of suppressing the generation of chips and suppressing the occurrence of picking up failure of a semiconductor chip having a film-like adhesive when dicing a semiconductor wafer using a dicing blade, and a method for manufacturing a semiconductor chip and a method for manufacturing a semiconductor device using the dicing die-bonding sheet.
Drawings
Fig. 1 is a cross-sectional view schematically showing an embodiment of the dicing die-bonding sheet of the present invention.
Fig. 2 is a cross-sectional view schematically showing another embodiment of the dicing die-bonding sheet of the present invention.
Fig. 3 is a cross-sectional view schematically showing another embodiment of the dicing die-bonding sheet of the invention.
Fig. 4 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor chip according to the present invention.
Fig. 5 is an enlarged cross-sectional view schematically showing an embodiment of a semiconductor chip obtained by the manufacturing method of the present invention.
Fig. 6 is a cross-sectional view schematically showing an example of a state in which a notch is formed in the intermediate structure by using a dicing blade in the dicing step.
Fig. 7 is an enlarged cross-sectional view schematically showing an example of a semiconductor chip obtained by a conventional manufacturing method.
Fig. 8 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor device according to the present invention.
Description of the symbols
101. 102, 103. Cut chip bonding sheet
11. Base material
11 a. Side 1 of the substrate
12. Adhesive layer
12 a. Side 1 of the adhesive layer
13. 23. Film adhesive
13a, 23 a. The 1 st side of the film-like adhesive
201. Intermediate structure
8. Cutting knife
9. Semiconductor chip
9' DEG.semiconductor wafer
9 a'. Cndot.semiconductor surface of wafer
10. Incision
T 1 Thickness of adhesive layer
Detailed Description
< dicing die bonding sheet >)
The dicing die-bonding sheet of the present invention comprises a base material and a film-like adhesive on the base material, wherein the adhesive layer has a thickness of 20 to 50 μm and an elongation at break of 5 to 50%.
The dicing die-bonding sheet of the present invention is used for dicing a semiconductor wafer with a dicing blade (that is, knife dicing), and picking up a semiconductor chip having a film-like adhesive after dicing (which may be referred to as a "semiconductor chip with a film-like adhesive" in the present specification) by the dicing blade.
In dicing using a dicing blade, the dicing blade is rotated to cut into a semiconductor wafer. At this time, since at least a part of the semiconductor wafer and the dicing die bonding sheet is cut by the dicing blade, chips are generated. The chips are generated from either the semiconductor wafer or the dicing die bonding sheet, and are suspended in a powder form, a fiber form, or the like, or remain as whiskers without being completely separated from either of the layers. If the amount of the cutting chips generated is large, a part of the cutting chips is likely to adhere to the film-like adhesive cut from the semiconductor chip and remain. If the chips remain as described above, the semiconductor chip with the film adhesive cannot be picked up normally, and a pickup failure may occur. Even if the semiconductor device is successfully picked up, the semiconductor device manufactured with the chips remaining may no longer function properly.
In contrast, in the dicing die-bonding sheet of the present invention, the thickness and the elongation at break of the adhesive layer are set to fall within the above ranges, so that the amount of chips generated can be reduced when the dicing blade is used to dice the semiconductor wafer. Further, the occurrence of a pickup failure of the semiconductor chip with the film-like adhesive can be suppressed.
Hereinafter, the layers constituting the dicing die-bonding sheet of the present invention will be described first.
< substrate >
The constituent material of the base material is preferably various resins, and specific examples thereof include: polyethylene (low density polyethylene (sometimes abbreviated as LDPE), linear low density polyethylene (sometimes abbreviated as LLDPE), high density polyethylene (sometimes abbreviated as HDPE), etc.), polypropylene, polybutene, polybutadiene, polymethylpentene, styrene-ethylenebutylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, polyacrylic urethane, polyimide, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, hydrogenated product, modified product, crosslinked product or copolymer of any of them, etc.
In the present specification, "(meth) acrylic acid" means a concept including both "acrylic acid" and "methacrylic acid". Similarly to the terms of (meth) acrylic acid, for example, "(meth) acrylate" means a concept including both "acrylate" and "methacrylate", and "(meth) acryl" means a concept including both "acryl" and "methacryl".
The number of the resins constituting the base material may be 1, or 2 or more, and in the case of 2 or more, the combination and ratio thereof may be arbitrarily selected.
The substrate may comprise 1 layer (i.e., a single layer), or may comprise 2 or more layers. In the case where the substrate comprises a plurality of layers, these plurality of layers may be the same as or different from each other. That is, all layers may be the same, all layers may be different, or only a part of the layers may be the same. When the plurality of layers are different from each other, the combination of the plurality of layers is not particularly limited as long as the effect of the present invention is not impaired. Here, the plurality of layers are different from each other means that at least one of the material and the thickness of each layer is different from each other.
In the present specification, the term "a plurality of layers may be the same or different from each other" means "all layers may be the same or different from each other, or only a part of layers may be the same", and "a plurality of layers are different from each other" means "at least one of the constituent materials and the thicknesses of the layers are different from each other".
The thickness of the substrate may be appropriately selected according to the purpose, and is preferably 50 to 300. Mu.m, and more preferably 60 to 100. Mu.m.
Here, the "thickness of the substrate" refers to the thickness of the entire substrate, and for example, the thickness of the substrate including a plurality of layers refers to the total thickness of all layers constituting the substrate. Examples of the method for measuring the thickness of the substrate include: and a method of measuring the thickness at any 5 points by using a contact thickness meter and calculating an average value of the measured values.
In order to improve the adhesion between the substrate and another layer such as an adhesive layer provided on the substrate, the surface of the substrate may be subjected to roughening treatment by sandblasting, solvent treatment, embossing treatment, or the like, or oxidation treatment such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone-ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, or the like.
The substrate may be one having a surface subjected to an undercoating treatment.
When the base material is stored by laminating the antistatic coating layer or the dicing die bonding sheet, the base material may have a layer for preventing the base material from adhering to another sheet, a layer for preventing the base material from adhering to an absorbent tape, or the like.
< adhesive layer >
The pressure-sensitive adhesive layer satisfies the following conditions of thickness and elongation at break, and is preferably non-energy-ray-curable.
In the present invention, "non-energy-ray-curable" refers to a property that does not cure even when irradiated with energy rays. In contrast, the property of curing by irradiation with an energy ray is referred to as "energy ray curability".
In the present invention, the "energy ray" refers to a ray having an energy quantum in an electromagnetic wave or a charged particle beam, and examples thereof include: ultraviolet rays, electron beams, and the like.
The ultraviolet ray can be irradiated with ultraviolet rays using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, or the like as an ultraviolet ray source. The electron beam may be irradiated by being generated by an electron beam accelerator or the like.
The pressure-sensitive adhesive layer may be 1 layer (i.e., a single layer) or 2 or more layers, and in the case of a plurality of layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
The thickness of the pressure-sensitive adhesive layer is 20 to 50 μm, preferably 20 to 45 μm, more preferably 20 to 40 μm, and particularly preferably 20 to 35 μm. When the thickness of the pressure-sensitive adhesive layer is not less than the lower limit, a higher adhesive force is obtained with respect to the adherend (i.e., film-like adhesive). On the other hand, when the thickness of the pressure-sensitive adhesive layer is set to the upper limit or less, the semiconductor chip with the film-like adhesive can be peeled off and picked up more easily in the peeling step described below, and the amount of chips generated can be further reduced when the semiconductor wafer is diced using a dicing blade. Further, the adhesive layer is prevented from becoming excessively thick, the manufacturing cost of the dicing die-bonding sheet can be reduced, the adhesive layer can be stably formed, and the dicing die-bonding sheet can be more stably manufactured.
Here, the "thickness of the adhesive layer" refers to the thickness of the entire adhesive layer, and for example, the thickness of the adhesive layer including a plurality of layers refers to the total thickness of all layers constituting the adhesive layer. Further, examples of the method for measuring the thickness of the pressure-sensitive adhesive layer include: and a method of measuring the thickness at any 5 points using a contact thickness meter and calculating an average value of the measured values.
The adhesive layer has an elongation at break of 5% to 50%, preferably 6% to 46%, more preferably 7% to 44%, and particularly preferably 8% to 42%. By setting the breaking elongation of the adhesive layer to the lower limit value or more, the adhesive layer is highly prevented from being broken at a portion other than the target portion when the adhesive layer is stretched (that is, the adhesive layer is expanded) in the process until the semiconductor chip with the film-like adhesive is peeled from the adhesive layer and picked up, and the dicing die bonding sheet becomes a bonding sheet having more excellent characteristics. On the other hand, when the breaking elongation of the pressure-sensitive adhesive layer is not more than the upper limit, the amount of generation of chips can be reduced when the semiconductor wafer is diced by the dicing blade, and the diced semiconductor chip with the film-like adhesive can be easily peeled from the pressure-sensitive adhesive layer and picked up.
In the present specification, the "elongation at break of the pressure-sensitive adhesive layer" means "elongation at break of the pressure-sensitive adhesive layer before curing" when the pressure-sensitive adhesive layer is curable unless otherwise specified. The elongation at break refers to the elongation at break of the pressure-sensitive adhesive layer at room temperature, unless otherwise specified. In the present specification, the term "normal temperature" refers to a temperature that is not particularly cold or not particularly hot, that is, a normal temperature, and includes, for example, a temperature of 15 to 25 ℃.
In the present invention, the elongation at break of the adhesive layer is determined as follows: the pressure-sensitive adhesive layer having a width of 10mm and a thickness of 0.03mm was fixed at two points so that the distance between the fixed points became 10mm, the pressure-sensitive adhesive layer was stretched at a stretching speed of 1000mm/min between the fixed points, and the elongation of the pressure-sensitive adhesive layer at the time of fracture of the pressure-sensitive adhesive layer was measured.
In the present specification, the "elongation at break" of X% (wherein X is a positive number) means the following: in the above-described measurement method, when the pressure-sensitive adhesive layer is stretched so that the pressure-sensitive adhesive layer is elongated in the stretching direction by a length of X% of the original length (i.e., the length when it is not stretched), that is, when the entire length of the pressure-sensitive adhesive layer in the stretching direction is [1+ X/100] times the length before stretching, the pressure-sensitive adhesive layer is broken.
The elongation at break of the pressure-sensitive adhesive layer can be appropriately adjusted by, for example, adjusting the type and amount of the components contained in the pressure-sensitive adhesive layer. For example, the elongation at break of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the components contained in the pressure-sensitive adhesive layer, that is, the type and content ratio of the structural units in the pressure-sensitive adhesive resin described below. In addition, the elongation at break of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the contents of the pressure-sensitive adhesive resin and the crosslinking agent in the pressure-sensitive adhesive layer. However, these adjustment methods are only examples.
In the present invention, the adhesive strength of the adhesive layer to the film-like adhesive is not particularly limited as long as the effect of the present invention is not impaired, but is preferably 35mN/25mm to 300mN/25mm, and more preferably 45mN/25mm to 100mN/25mm.
By setting the adhesive force to 35mN/25mm or more, the laminated structure of the adhesive layer and the film-like adhesive can be more stably maintained in the dicing die-bonding sheet. Further, when the adhesive force is set to 45mN/25mm or more, so-called die scattering, which is caused by a force applied to the semiconductor chips at the time of dicing the semiconductor wafer, is further suppressed.
On the other hand, when the adhesive force is 300mN/25mm or less, the adhesive force of the adhesive layer to the film-like adhesive is appropriately reduced, and as described below, the semiconductor chip with the film-like adhesive after dicing can be easily peeled off from the adhesive layer and picked up without curing the adhesive layer by energy ray irradiation or the like. Further, in this case, the semiconductor chip with the film-like adhesive is prevented from being picked up in a state where a part of the adhesive layer remains attached to the film-like adhesive. Further, when the adhesive force is set to 100mN/25mm or less, the semiconductor chip with the film-like adhesive is pushed up, and the semiconductor chip is peeled off from the adhesive layer and picked up, so that the semiconductor chip can be easily picked up with a small push-up amount, and so-called chipping, for example, cracking or chipping of the semiconductor chip can be further suppressed.
In the present specification, the term "adhesive force of the pressure-sensitive adhesive layer to the film-like adhesive" means "adhesive force of the pressure-sensitive adhesive layer before curing to the film-like adhesive, unless otherwise specified, in the case where the pressure-sensitive adhesive layer is curable. The adhesive force refers to the adhesive force of the pressure-sensitive adhesive layer at room temperature unless otherwise specified.
In the present invention, the above adhesive force (mN/25 mm) can be measured by the following method. That is, the dicing die-bonding sheet having a width of 25mm and an arbitrary length was produced.
Next, the dicing die-bonding sheet is attached to a fixing base material with a film-like adhesive at normal temperature (for example, 23 ℃). The "fixing substrate" as used herein is a substrate that can firmly fix the film-like adhesive of the dicing die-bonding sheet, and the substrate may be in the form of a sheet or in other forms, and for example, an adhesive substrate having an adhesive surface as a fixing surface of the film-like adhesive (in other words, the dicing die-bonding sheet) may be mentioned.
Then, the laminate of the base material and the pressure-sensitive adhesive layer is peeled from the film-like adhesive at a peeling speed of 300mm/min so that the surfaces of the film-like adhesive and the pressure-sensitive adhesive layer which are in contact with each other are at an angle of 180 ° so as to be 180 ° at normal temperature (e.g., 23 ℃). The peel force at this time was measured, and the measured value of the peel force was defined as the adhesive force (mN/25 mm).
The length of the dicing die bonding sheet to be measured is not particularly limited as long as the peeling force can be stably measured.
The adhesive strength of the pressure-sensitive adhesive layer to the film-like adhesive can be appropriately adjusted by, for example, adjusting the kind and amount of the components contained in the pressure-sensitive adhesive layer, the thickness of the pressure-sensitive adhesive layer, and the like. For example, the adhesive force can be easily adjusted by adjusting the type and content ratio of the constituent units in the adhesive resin described below, which is a component contained in the adhesive layer. In addition, the above adhesive force can be easily adjusted by adjusting the content of the adhesive resin or the crosslinking agent in the adhesive layer. However, these adjustment methods are only examples.
In the present invention, the elastic modulus of the pressure-sensitive adhesive layer is not particularly limited, and is preferably 30 to 140MPa, more preferably 35 to 130MPa, and particularly preferably 40 to 120MPa. When the elastic modulus of the pressure-sensitive adhesive layer is not less than the lower limit value, the pressure-sensitive adhesive layer is not too soft, and therefore, the following property of the film-like adhesive is suppressed from becoming excessive, and when the semiconductor chip with the film-like adhesive is peeled from the pressure-sensitive adhesive layer and picked up, the semiconductor chip tends to be picked up more easily. Further, since the adhesive layer is not excessively hard by setting the elastic modulus of the adhesive layer to the upper limit value or less, the adhesive layer is easily deformed when the semiconductor chip with the film-like adhesive is pushed and peeled from the adhesive layer and picked up, and the picking up can be performed more easily.
In the present specification, the "elastic modulus of the pressure-sensitive adhesive layer" refers to "elastic modulus of the pressure-sensitive adhesive layer before curing" when the pressure-sensitive adhesive layer is curable, unless otherwise specified, as in the case of the "elongation at break of the pressure-sensitive adhesive layer" described above. The elastic modulus refers to the elastic modulus of the pressure-sensitive adhesive layer at room temperature unless otherwise specified.
In the present invention, the elastic modulus of the pressure-sensitive adhesive layer may be measured at the same time as the elongation at break of the pressure-sensitive adhesive layer described above.
The elastic modulus of the pressure-sensitive adhesive layer can be appropriately adjusted by, for example, adjusting the type and amount of the components contained in the pressure-sensitive adhesive layer. For example, the elastic modulus of the pressure-sensitive adhesive layer can be easily adjusted by adjusting the type and content ratio of the constituent units in the pressure-sensitive adhesive resin described below as the component contained in the pressure-sensitive adhesive layer. In addition, the elastic modulus of the adhesive layer can be easily adjusted by adjusting the content of the adhesive resin or the crosslinking agent of the adhesive layer. However, these adjustment methods are only examples.
The adhesive layer may be formed of an adhesive composition containing an adhesive. For example, the pressure-sensitive adhesive layer can be formed on a target site by applying a pressure-sensitive adhesive composition to a surface to be formed with the pressure-sensitive adhesive layer and drying the composition as necessary. More specific forming methods of the adhesive layer and forming methods of other layers are described in detail below. The content ratio of the components that do not vaporize at normal temperature in the pressure-sensitive adhesive composition is generally the same as the content ratio of the components in the pressure-sensitive adhesive layer.
The application of the adhesive composition can be carried out by a known method, and examples thereof include: a method using various coaters such as an air knife coater, a bar coater, a gravure coater, a roll coater, a curtain coater, a die coater, a blade coater, a screen coater, a meyer bar coater, a kiss coater, and the like.
The drying conditions of the pressure-sensitive adhesive composition are not particularly limited, and the pressure-sensitive adhesive composition is preferably dried by heating when it contains the following solvent, and in this case, it is preferably dried at 70 to 130 ℃ for 10 seconds to 5 minutes, for example.
[ adhesive composition ]
The adhesive composition is preferably non-energy-ray curable.
Examples of the non-energy ray-curable adhesive composition include: a composition containing an adhesive resin (hereinafter referred to as "adhesive resin (i)") such as an acrylic resin (i.e., a resin having a (meth) acryloyl group), a urethane resin (i.e., a resin having a urethane bond), a rubber resin (i.e., a resin having a rubber structure), a polysiloxane resin (i.e., a resin having a siloxane bond), an epoxy resin (i.e., a resin having an epoxy group), a polyvinyl ether, or a polycarbonate.
(adhesive resin (i))
The adhesive resin (i) is preferably an acrylic resin.
Examples of the acrylic resin in the adhesive resin (i) include: an acrylic polymer having at least a structural unit derived from an alkyl (meth) acrylate.
The acrylic resin may have 1 or 2 or more kinds of structural units, and when the number of structural units is 2 or more, the combination and ratio thereof may be arbitrarily selected.
Examples of the alkyl (meth) acrylate include alkyl (meth) acrylates in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms, and the alkyl group is preferably linear or branched.
More specifically, the alkyl (meth) acrylate includes: methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate (also referred to as lauryl (meth) acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (also referred to as myristyl (meth) acrylate), pentadecyl (meth) acrylate, hexadecyl (meth) acrylate ((palmityl (meth) acrylate), heptadecyl (meth) acrylate, octadecyl (meth) acrylate (also referred to as stearyl (meth) acrylate), nonadecyl (meth) acrylate, eicosyl (meth) acrylate, and the like.
In order to improve the adhesive strength of the pressure-sensitive adhesive layer, the acrylic polymer preferably has a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms and an alkyl group. In addition, the alkyl group preferably has 4 to 12 carbon atoms, and more preferably 4 to 8 carbon atoms, in order to further improve the adhesive strength of the adhesive layer. The alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms is preferably an alkyl acrylate.
The acrylic polymer preferably has a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth) acrylate.
Examples of the functional group-containing monomer include: a monomer capable of introducing an unsaturated group into a side chain of the acrylic polymer by reacting the functional group with a crosslinking agent described below to become a starting point of crosslinking and reacting the functional group with an unsaturated group in the unsaturated group-containing compound.
Examples of the functional group in the functional group-containing monomer include: hydroxyl, carboxyl, amino, epoxy, and the like.
That is, examples of the functional group-containing monomer include: hydroxyl group-containing monomers, carboxyl group-containing monomers, amino group-containing monomers, epoxy group-containing monomers, and the like.
Examples of the hydroxyl group-containing monomer include: hydroxyalkyl (meth) acrylates such as hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; and non (meth) acrylic unsaturated alcohols such as vinyl alcohol and allyl alcohol (i.e., unsaturated alcohols having no (meth) acryloyl skeleton).
Examples of the carboxyl group-containing monomer include: ethylenically unsaturated monocarboxylic acids (i.e., monocarboxylic acids having an ethylenically unsaturated bond) such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids (i.e., dicarboxylic acids having an ethylenically unsaturated bond) such as fumaric acid, itaconic acid, maleic acid, and citraconic acid; anhydrides of the above ethylenically unsaturated dicarboxylic acids; and carboxyalkyl (meth) acrylates such as 2-carboxyethyl methacrylate.
The functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.
The number of the functional group-containing monomers constituting the acrylic polymer may be 1, 2 or more, and in the case of 2 or more, the combination and ratio thereof may be arbitrarily selected.
In the acrylic polymer, the content of the structural unit derived from the functional group-containing monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, and particularly preferably 5 to 30% by mass, based on the total amount of the structural units.
The acrylic polymer may have a structural unit derived from another monomer in addition to a structural unit derived from an alkyl (meth) acrylate and a structural unit derived from a functional group-containing monomer.
The other monomer is not particularly limited as long as it is a monomer copolymerizable with, for example, an alkyl (meth) acrylate.
Examples of the other monomers include: styrene, alpha-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide, and the like.
The other monomers constituting the acrylic polymer may be 1 or 2 or more, and when 2 or more, their combination and ratio may be arbitrarily selected.
The adhesive resin (i) other than the acrylic polymer preferably has a structural unit derived from a functional group-containing monomer, similarly to the acrylic polymer.
The adhesive resin (i) contained in the adhesive composition may be 1 kind or 2 or more kinds, and when the number is 2 or more, the combination and ratio thereof may be arbitrarily selected.
In the adhesive composition, the content ratio of the adhesive resin (i) to the total content of the components other than the solvent (i.e., the content of the adhesive resin (i) in the adhesive layer) is preferably 40 to 95% by mass, more preferably 50 to 95% by mass, and particularly preferably 60 to 90% by mass. When the content of the adhesive resin (i) is in such a range, the adhesiveness of the adhesive layer becomes better.
(crosslinking agent (ii))
The adhesive composition preferably contains a crosslinking agent (ii).
The crosslinking agent (ii) reacts with the functional group, for example, to crosslink the adhesive resins (i) with each other.
Examples of the crosslinking agent (ii) include: isocyanate-based crosslinking agents (i.e., crosslinking agents having an isocyanate group), such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (i.e., crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (i.e., crosslinking agents having an aziridinyl group), such as hexa [1- (2-methyl) -aziridinyl ] triphosphitriazine; a metal chelate-based crosslinking agent such as an aluminum chelate compound (i.e., a crosslinking agent having a metal chelate structure); an isocyanurate-based crosslinking agent (i.e., a crosslinking agent having an isocyanurate skeleton), and the like.
The crosslinking agent (ii) is preferably an isocyanate-based crosslinking agent in terms of improving cohesive strength of the pressure-sensitive adhesive and improving adhesive strength of the pressure-sensitive adhesive layer, and in terms of easy availability.
The crosslinking agent (ii) contained in the adhesive composition may be 1 kind or 2 or more kinds, and in the case of 2 or more kinds, the combination and ratio thereof may be arbitrarily selected.
When the pressure-sensitive adhesive composition contains the crosslinking agent (ii), the content of the crosslinking agent (ii) in the pressure-sensitive adhesive composition is preferably 5 to 100 parts by mass, more preferably 10 to 80 parts by mass, and particularly preferably 15 to 60 parts by mass, based on 100 parts by mass of the content of the pressure-sensitive adhesive resin (i). When the content of the crosslinking agent (ii) is not less than the lower limit, the effect of using the crosslinking agent (ii) can be more remarkably obtained. Further, by setting the content of the crosslinking agent (ii) to the upper limit value or less, it becomes easier to adjust the adhesive force of the pressure-sensitive adhesive layer to the film-like adhesive.
(other additives)
The adhesive composition may contain other additives not included in any of the above components within a range not impairing the effects of the present invention.
Examples of the other additives include: known additives such as antistatic agents, antioxidants, softening agents (i.e., plasticizers), fillers (i.e., fillers), rust inhibitors, colorants (i.e., pigments or dyes), sensitizers, tackifiers, reaction retarders, crosslinking accelerators (i.e., catalysts).
The "reaction retarder" is an additive that suppresses the progress of an unintended crosslinking reaction in the adhesive composition during storage, for example, by the action of a catalyst mixed into the adhesive composition. Examples of the reaction retarder include compounds that form chelate complexes by chelating a catalyst, and more specifically, compounds having 2 or more carbonyl groups (-C (= O) -) in 1 molecule.
The number of other additives contained in the adhesive composition may be only 1, or may be 2 or more, and in the case of 2 or more, the combination and ratio thereof may be arbitrarily selected.
The content of the other additives in the adhesive composition is not particularly limited, and may be appropriately selected according to the kind of the additives.
(solvent)
The adhesive composition may also contain a solvent. The binder composition contains a solvent, thereby improving the coating suitability for the surface to be coated.
The solvent is preferably an organic solvent, and examples of the organic solvent include: ketones such as methyl ethyl ketone and acetone; carboxylic acid esters such as ethyl acetate; tetrahydrofuran, di
Ethers such as alkanes; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol, and the like.
The solvent may be used in the adhesive composition without removing the solvent used in the production of the adhesive resin (i) from the adhesive resin (i); in the production of the pressure-sensitive adhesive composition, a solvent which is the same as or different from the solvent used in the production of the pressure-sensitive adhesive resin (i) may be separately added.
The binder composition may contain 1 or 2 or more kinds of solvents, and when the number of solvents is 2 or more, the combination and ratio of the solvents can be arbitrarily selected.
The content of the solvent in the adhesive composition is not particularly limited as long as it is appropriately adjusted.
[ method for producing adhesive composition ]
The adhesive composition is obtained by blending the components for constituting the adhesive composition.
The order of addition when each component is blended is not particularly limited, and 2 or more components may be added simultaneously.
When a solvent is used, the solvent may be mixed with any of the compounding ingredients other than the solvent and used by diluting the compounding ingredients in advance, or the solvent may be mixed with any of the compounding ingredients other than the solvent without diluting the compounding ingredients in advance.
The method for mixing the components at the time of blending is not particularly limited, and may be appropriately selected from the following known methods: a method of mixing by rotating a stirrer, a stirring blade, or the like; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves, and the like.
The temperature and time for adding and mixing the components are not particularly limited as long as the components to be blended are not deteriorated, and may be appropriately adjusted, and the temperature is preferably 15 to 30 ℃.
< film-shaped adhesive >
The film-like adhesive is not particularly limited as long as the effects of the present invention are not impaired, and a known film-like adhesive can be suitably used.
The film-like adhesive has a curable film-like adhesive, preferably a thermosetting film-like adhesive, and preferably a film-like adhesive having pressure-sensitive adhesiveness. A film-like adhesive having thermosetting and pressure-sensitive adhesive properties can be attached by being lightly pressed against various adherends in an uncured state. The film-like adhesive may be one which can be attached to various adherends by softening the adhesive by heating. The film-like adhesive is cured to finally provide a cured product having high impact resistance, and the cured product can maintain sufficient adhesive properties even under severe conditions of high temperature and high humidity.
The film-like adhesive may be a film-like adhesive including 1 layer (i.e., a single layer), or may be a film-like adhesive including a plurality of layers of 2 or more layers. When the film-like adhesive includes a plurality of layers, the plurality of layers may be the same or different from each other. That is, all layers may be the same, all layers may be different, or only a part of the layers may be the same. When the plurality of layers are different from each other, the combination of the plurality of layers is not particularly limited as long as the effect of the present invention is not impaired. Here, the plurality of layers are different from each other means that at least one of the material and the thickness of each layer is different from each other.
The thickness of the film-like adhesive is not particularly limited, but is preferably 1 to 50 μm, and more preferably 3 to 40 μm. By setting the thickness of the film-like adhesive to the lower limit or more, a higher adhesive force is obtained to the adherend (i.e., semiconductor chip). On the other hand, by setting the thickness of the film-like adhesive to the above upper limit or less, the film-like adhesive can be cut more easily in the dividing step described below, and the amount of generation of cutting chips can be further reduced in the dicing of the semiconductor wafer using the dicing blade.
Here, the "thickness of the film-like adhesive" refers to the thickness of the entire film-like adhesive, and for example, the thickness of the film-like adhesive including a plurality of layers refers to the total thickness of all the layers constituting the film-like adhesive. Further, examples of a method for measuring the thickness of the film-like adhesive include: and a method of measuring the thickness at any 5 points using a contact thickness meter and calculating an average value of the measured values.
A preferable film-like adhesive includes, for example, a film-like adhesive containing a polymer component (a) and an epoxy thermosetting resin (b). Examples of the epoxy thermosetting resin (b) include resins composed of an epoxy resin (b 1) and a thermosetting agent (b 2).
In order to improve various physical properties of the film-like adhesive, the film-like adhesive may further contain, if necessary, other components other than the polymer component (a) and the epoxy thermosetting resin (b). Preferred examples of the other components include: a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), a general-purpose additive (i), and the like. The general-purpose additive (i) may be a known additive, may be arbitrarily selected depending on the purpose, and is not particularly limited, and preferable additives include, for example: plasticizers, antistatic agents, antioxidants, colorants (i.e., dyes or pigments), deaerating agents (gettering agents), and the like.
[ adhesive composition ]
The film-like adhesive may be formed of an adhesive composition containing a constituent material of the film-like adhesive. For example, the adhesive composition may be applied to a surface to be formed with a film-like adhesive, and dried as necessary to form the film-like adhesive on a target portion. A more specific forming method of the film-like adhesive is explained in detail below together with the forming method of the other layers. The content ratio of the components that do not vaporize at room temperature in the adhesive composition is generally the same as the content ratio of the above components in the film-like adhesive.
The adhesive composition can be applied by the same method as in the case of the application of the adhesive composition described above.
The drying conditions of the adhesive composition are not particularly limited, and when the adhesive composition contains the following solvent, it is preferably dried by heating, and in this case, it is preferably dried, for example, at 70 to 130 ℃ for 10 seconds to 5 minutes.
Preferred adhesive compositions include, for example: an adhesive composition comprising the above-mentioned polymer component (a), an epoxy thermosetting resin (b), and, if necessary, the above-mentioned other components and a solvent.
Examples of the solvent contained in the adhesive composition include: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (i.e., 2-methyl-1-propanol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (i.e., compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone, and the like.
The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, in terms of enabling the components contained in the adhesive composition to be mixed more uniformly.
The solvent contained in the adhesive composition may be used as it is without removing the solvent used in the production of each component such as the polymer component (a) from each component, or may be used by adding a solvent of the same type as or different from the solvent used in the production of each component such as the polymer component (a) separately in the production of the adhesive composition.
The adhesive composition and the film-like adhesive may contain 1 or 2 or more of each component such as the polymer component (a), and when the number of the component is 2 or more, the combination and ratio of the components can be arbitrarily selected.
The content of each component such as the polymer component (a) in the adhesive composition and the film-like adhesive is not particularly limited, and may be appropriately selected according to the purpose.
[ method for producing adhesive composition ]
The adhesive composition is obtained by blending the components constituting the adhesive composition, and can be produced by the same method as the above-described method for producing the adhesive composition, except that the components are different.
Next, the dicing die-bonding sheet of the present invention is explained in more detail with reference to the drawings. In the drawings used in the following description, parts to be main parts are enlarged and shown for convenience in order to facilitate understanding of the features of the present invention, and the dimensional ratios of the respective components are not limited to those in practice.
Fig. 1 is a cross-sectional view schematically showing an embodiment of the dicing die-bonding sheet of the present invention.
The dicing die-bonding sheet 101 shown here is formed by providing a pressure-sensitive adhesive layer 12 on a base material 11 and providing a film-like adhesive 13 on the pressure-sensitive adhesive layer 12. The dicing die-bonding sheet 101 further includes a release film 15 on the film adhesive 13.
In the dicing die-bonding sheet 101, the adhesive layer 12 is laminated on one surface (hereinafter, sometimes referred to as "1 st surface 11 a") of the base material 11, the film-like adhesive 13 is laminated on the entire surface of the opposite surface (hereinafter, sometimes referred to as "1 st surface 12 a") of the adhesive layer 12 from the side on which the base material 11 is provided, the jig adhesive layer 14 is laminated on a region in the vicinity of a peripheral portion which is a part of the opposite surface (hereinafter, sometimes referred to as "1 st surface 13 a") of the film-like adhesive 13 from the side on which the adhesive layer 12 is provided, and the release film 15 is laminated on the surface of the 1 st surface 13a of the film-like adhesive 13 on which the jig adhesive layer 14 is not laminated and the surfaces (that are the 1 st surface 14a and the side surfaces 14 c) of the jig adhesive layer 14 that are not in contact with the film-like adhesive 13. Here, the 1 st surface 14a of the jig adhesive layer 14 refers to a surface of the jig adhesive layer 14 opposite to the side in contact with the film-like adhesive 13, and the boundary between the 1 st surface 14a and the side surface 14c of the jig adhesive layer 14 may not be clearly distinguished.
As described above, the adhesive layer 12 has a thickness of 20 to 50 μm and an elongation at break of 5 to 50%.
The adhesive layer 14 for a jig may have, for example, a single-layer structure containing an adhesive component, or may have a multilayer structure in which layers containing an adhesive component are laminated on both surfaces of a sheet as a core material.
In the dicing die bonding sheet 101 shown in fig. 1, the 1 st surface 13a of the film-like adhesive 13 is attached to the surface (in this specification, simply referred to as the "back surface") opposite to the surface (in this specification, simply referred to as the "circuit formation surface") of the semiconductor wafer (not shown) on which the circuit is formed, and the 1 st surface 14a of the adhesive layer 14 for a jig is attached to a jig such as a ring frame, in a state where the release film 15 is removed.
Fig. 2 is a cross-sectional view schematically showing another embodiment of the dicing die-bonding sheet of the present invention. In the drawings of fig. 2 and subsequent drawings, the same components as those shown in fig. 1 are denoted by the same reference numerals as those in fig. 1, and detailed description thereof is omitted.
The dicing die bonding sheet 102 shown here is the same as the dicing die bonding sheet 101 shown in fig. 1 except that the jig adhesive layer 14 is not provided.
That is, in the dicing die-bonding sheet 102, the adhesive layer 12 is laminated on the 1 st surface 11a of the base material 11, the film-like adhesive 13 is laminated on the entire 1 st surface 12a of the adhesive layer 12, and the release film 15 is laminated on the entire 1 st surface 13a of the film-like adhesive 13.
The dicing die-bonding sheet 102 shown in fig. 2 is used by attaching a part of the central region of the 1 st surface 13a of the film-like adhesive 13 to the back surface of a semiconductor wafer (not shown) and attaching the region near the peripheral portion of the 1 st surface 13a of the film-like adhesive 13 to a jig such as an annular frame in a state where the release film 15 is removed.
Fig. 3 is a cross-sectional view schematically showing another embodiment of the dicing die-bonding sheet of the invention.
The dicing die bonding sheet 103 shown here is the same as the dicing die bonding sheet 101 shown in fig. 1 except that the shape of the film-like adhesive is different.
That is, the dicing die-bonding sheet 103 includes the pressure-sensitive adhesive layer 12 on the base material 11, and the film-like adhesive 23 on the pressure-sensitive adhesive layer 12. The dicing die-bonding sheet 103 further includes a release film 15 on the film adhesive 23.
In the dicing die-bonding sheet 103, the pressure-sensitive adhesive layer 12 is laminated on the 1 st surface 11a of the base material 11, and the film-like adhesive 23 is laminated on the center side region which is a part of the 1 st surface 12a of the pressure-sensitive adhesive layer 12. The release film 15 is laminated on the surface of the 1 st surface 12a of the pressure-sensitive adhesive layer 12 on which the film-like adhesive 23 is not laminated and the surfaces of the film-like adhesive 23 that are not in contact with the pressure-sensitive adhesive layer 12 (i.e., the 1 st surface 23a and the side surfaces 23 c). Further, the boundary between the 1 st surface 23a and the side surface 23c of the film-like adhesive 23 may not be clearly distinguished.
When the die bond sheet 103 is cut in a plan view from above the film-like adhesive 23 side, the surface area of the film-like adhesive 23 is smaller than that of the pressure-sensitive adhesive layer 12, and has a shape such as a circle.
The dicing die-bonding sheet 103 shown in fig. 3 is used by attaching the 1 st surface 23a of the film-like adhesive 23 to the back surface of a semiconductor wafer (not shown) with the release film 15 removed, and attaching the surface of the 1 st surface 12a of the adhesive layer 12 on which the film-like adhesive 23 is not laminated to a jig such as a ring frame.
In the dicing die bonding sheet 103 shown in fig. 3, an adhesive layer for a jig (not shown) may be laminated on the surface of the 1 st surface 12a of the pressure-sensitive adhesive layer 12 on which the film-like adhesive 23 is not laminated, in the same manner as shown in fig. 1. The dicing die bonding sheet 103 having such a jig adhesive layer is used by sticking the 1 st surface of the jig adhesive layer to a jig such as a ring frame, similarly to the dicing die bonding sheet 101 shown in fig. 1.
The dicing die bonding sheet of the present invention is not limited to the dicing die bonding sheet shown in fig. 1 to 3, and a part of the structure of the dicing die bonding sheet shown in fig. 1 to 3 may be modified, deleted, or added within a range not to impair the effect of the present invention.
< method for producing dicing die bonding sheet >)
The dicing die bonding sheet may be manufactured by sequentially laminating the layers so that the layers are in a corresponding positional relationship. The formation of the layers is as described above.
For example, the pressure-sensitive adhesive composition can be applied to a substrate, and if necessary, dried to laminate a pressure-sensitive adhesive layer on the substrate.
On the other hand, for example, when a film-like adhesive is further laminated on the pressure-sensitive adhesive layer laminated on the substrate, the film-like adhesive can be directly formed by applying the above adhesive composition on the pressure-sensitive adhesive layer and drying it as necessary. In the case of forming a laminated structure of two successive layers using any of the compositions as described above, a layer formed of the composition may be further coated to newly form a layer. However, it is preferable that the latter of these two layers is formed in advance on the other release film using the composition, and the exposed surface of the formed layer on the side opposite to the side in contact with the release film is bonded to the exposed surface of the remaining layer after formation, thereby forming a continuous two-layer laminated structure. In this case, the composition is preferably applied to the release-treated surface of the release film. After the laminated structure is formed, the release film may be removed as needed.
That is, the dicing die-bonding sheet is obtained by coating an adhesive composition on a substrate, drying the adhesive composition as needed to laminate an adhesive layer on the substrate in advance, separately coating an adhesive composition on a release film, drying the adhesive composition as needed to form a film-like adhesive on the release film in advance, and laminating the film-like adhesive on the adhesive layer by bonding the exposed surface of the film-like adhesive to the exposed surface of the adhesive layer laminated on the substrate.
In the case of laminating a pressure-sensitive adhesive layer on a substrate, the pressure-sensitive adhesive layer may be formed in advance on a release film by applying the pressure-sensitive adhesive composition on the release film, and the pressure-sensitive adhesive layer may be laminated by bonding the exposed surface of the pressure-sensitive adhesive layer to one surface of the substrate, if necessary, in place of the method of applying the pressure-sensitive adhesive composition on the substrate as described above.
In either method, the release film may be removed at any timing after the formation of the target laminated structure.
In this way, since layers other than the base material constituting the dicing die-bonding sheet can be laminated by a method of forming the layers on the release film in advance and bonding the layers to the surface of the target layer, the dicing die-bonding sheet can be produced by appropriately selecting the layers to be subjected to such a step as needed.
The dicing die-bonding sheet is generally stored in a state in which a release film is bonded to the surface of the outermost layer (for example, a film-like adhesive) of the dicing die-bonding sheet on the side where the film-like adhesive is provided. Therefore, even if a composition for forming the outermost layer, such as an adhesive composition, is applied to the release film (preferably, the release-treated surface of the release film), and dried as necessary, the outermost layer is formed in advance on the release film, and the remaining layers are laminated on the exposed surface of the layer opposite to the side in contact with the release film by any of the above-described methods, and the release film is bonded without removing the release film, a dicing die-bonding sheet can be obtained.
< method for producing semiconductor chip >)
A method for manufacturing a semiconductor chip according to the present invention is a method for manufacturing a semiconductor chip using the dicing die bonding sheet according to the present invention, the method comprising the steps of: a step of forming an intermediate structure in which a semiconductor wafer is provided on a surface (i.e., the 1 st surface) of the film-like adhesive in the dicing die-bonding sheet opposite to the side on which the adhesive layer is provided (hereinafter, this intermediate structure may be simply referred to as "intermediate structure forming step"); and a step of forming a cut in the intermediate structure from the surface of the semiconductor wafer to the adhesive layer but not to the base material by using a dicing blade, thereby dividing the semiconductor wafer to form semiconductor chips (hereinafter, may be simply referred to as "dicing step").
By using the dicing die-bonding sheet of the present invention, the amount of chips generated in the dicing step can be significantly reduced compared to the conventional case when dicing the semiconductor wafer with a dicing blade. Here, the term "chips" is used as described above.
Hereinafter, a method for manufacturing the semiconductor chip will be described with reference to fig. 4. Fig. 4 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor chip according to the present invention.
Here, a manufacturing method in the case of using the dicing die bonding sheet shown in fig. 1 will be described.
< intermediate Structure Forming Process >
In the intermediate structure forming step, as shown in fig. 4 (a), an intermediate structure 201 is formed, and the semiconductor wafer 9' is provided on the 1 st surface 13a of the film-like adhesive 13 in the dicing die bonding sheet 101 in the intermediate structure 201.
The thickness of the semiconductor wafer 9' in the intermediate structure 201 is not particularly limited, but is preferably 10 μm to 100 μm, and more preferably 30 μm to 90 μm.
< cutting step >
Next, in the dicing step, as shown in fig. 4 (b), the dicing blade is used to form the cuts 10 reaching the adhesive layer 12 from the front surface (i.e., circuit forming surface) 9a ' of the semiconductor wafer 9' but not reaching the base material 11 in the intermediate structure 201, thereby dividing the semiconductor wafer 9' and forming the semiconductor chips 9.
The thickness of the semiconductor chip 9 is the same as that of the semiconductor wafer 9' described above.
Fig. 5 is an enlarged sectional view schematically showing the cut chip bonding sheet 101 formed with the notch 10 together with the obtained semiconductor chip 9.
As shown in FIG. 5, in this step, the thickness T of the adhesive layer 12 is used 1 The depth T of the cut 10 from the 1 st surface 12a of the adhesive layer 12 2 Satisfy T 1 >T 2 In such a manner as to form the incision 10. In the case where the bottom surface 120a of the cut portion in the pressure-sensitive adhesive layer 12 is not flat, the portion closest to the base 11 of the bottom surface 120a (i.e., the portion of the pressure-sensitive adhesive layer 12 where the depth of the cut 10 is the deepest) may be set as the calculated T 2 One reference is needed.
By forming the notch 10 so as not to reach the 1 st surface 11a of the base material 11 and stop in the pressure-sensitive adhesive layer 12, the amount of chips generated can be reduced, and the occurrence of defective pick-up of the semiconductor chip 9 with the film-like adhesive can be suppressed.
In the dicing step, it was confirmed that when the amount of chips generated was reduced, for example, when the adhesive layer and the base material were observed by SEM after the semiconductor chip 9 with the film-like adhesive was picked up, the amount of chips remaining on the dicing line decreased.
Depth T of incision 10 in adhesive layer 12 2 Relative to the thickness T of the adhesive layer 12 1 Ratio of (T) 2 /T 1 ) More than 0 and less than 1, preferably 0.1 to 0.9, more preferably 0.2 to 0.8, and particularly preferably 0.3 to 0.7. When the ratio is not less than the lower limit, the size of the protruding portion of the adhesive layer, that is, the protruding amount of the portion where the slits 10 are formed in the adhesive layer can be reduced. By reducing the amount of protrusion of the adhesive layer, the half with the film-like adhesive can be more highly suppressedPoor pickup of the conductor chip 9 occurs. On the other hand, by setting the ratio to the upper limit value or less, the amount of generated chips can be further reduced.
Fig. 6 is a cross-sectional view schematically showing an example of a state in which the intermediate structure 201 is provided with the cuts 10 by using a dicing blade in the dicing step. Here, a state is shown in which the tip portion 8a in the diameter direction of the dicing blade 8 is located in the adhesive layer 12 and does not reach the base material 11. Fig. 6 shows only a cross section of the structure of the dicing die-bonding sheet. Further, although a state is shown in which a gap portion exists between the dicing blade 8 and the pressure-sensitive adhesive layer 12 as the slit 10, there is also a case where: the adhesive layer 12 is left extending to the cutting blade 8 side, and as described above, the extending portion exists, and the above-described gap portion is further narrowed or does not exist.
In the present invention, the width W of the cutting blade 8 is preferably 20 μm to 50 μm, and more preferably 30 μm to 35 μm. By using such a cutting blade 8 of width W, the more excellent effects of the present invention are obtained. When semiconductor chips are formed by dividing a semiconductor wafer by a dicing blade having a width W, the distance between adjacent semiconductor chips (i.e., the kerf width) is generally the same as or an approximate value of W.
In the present invention, in the vicinity of the tip portion 8a of the dicing blade 8, the length L in the diameter direction of the region where the width W gradually becomes narrower toward the outside in the diameter direction of the dicing blade 8 (i.e., toward the tip portion 8 a) is preferably smaller than the thickness T of the adhesive layer 12 1 (L<T 1 ) For example, it is preferably less than 50 μm, more preferably less than 45 μm, further preferably less than 40 μm, and particularly preferably less than 35 μm. By using the cutting blade 8 having the length L, the more excellent effect of the present invention can be obtained.
On the other hand, the lower limit of the length L is not particularly limited as long as it is larger than 0 μm, but is usually preferably 10 μm, and more preferably 15 μm. The length L is represented by L = (W × tan θ)/2 using the angle θ described below.
In the present invention, a cutting blade in which the angle θ formed by the tip end portion 8a of the cutting blade 8 and the surface to be formed of the notch (in this specification, such an angle is sometimes referred to as "tip end angle of the cutting blade") is larger than 0 ° and smaller than 90 ° may be used. In such a cutting blade 8, θ may be, for example, greater than 0 ° and 80 ° or less, and preferably greater than 0 ° and 70 ° or less. By using such a cutting blade 8 of the tip angle θ, more excellent effects of the present invention are obtained.
Here, although the case of using the dicing blade having the tip angle θ larger than 0 ° and smaller than 90 ° is described, the dicing blade used in the dicing step is not limited thereto. For example, in the cutting step, a cutting blade 8 shown in fig. 6 may be used in which the tip angle θ is 0 °, that is, in the vicinity of the tip end 8a of the cutting blade 8, there is no region in which the width W gradually narrows toward the outside in the diameter direction of the cutting blade 8 (that is, toward the tip end 8 a).
On the other hand, as shown in fig. 7, in the intermediate structure 201, T is satisfied by the conventional manufacturing method 1 ＝T 2 In the case where the notch 10 is formed to extend from the front surface 9a 'of the semiconductor wafer 9' through the adhesive layer 12 to reach the base material 11, the above-described effects of the present invention cannot be obtained. Further, in FIG. 7, T 3 (T 3 >0) The depth of the notch 10 from the 1 st surface 11a of the substrate 11 is referred to. The part indicated by reference numeral 110a represents the bottom surface of the notch part of the base material 11.
In the cutting step, the rotation speed of the cutter is preferably 10000 to 60000rpm, more preferably 20000 to 50000rpm.
The moving speed of the cutter is preferably 20mm/sec to 80mm/sec, more preferably 40mm/sec to 60mm/sec.
When the cutter is operated, it is preferable to circulate the cutting water at a position where cutting is being performed, for example, at a rate of about 0.5L/min to 1.5L/min.
< method for manufacturing semiconductor device >)
The method for manufacturing a semiconductor device of the present invention includes, after the step of forming the semiconductor chip (i.e., the dicing step) by the method for manufacturing a semiconductor chip of the present invention, the following peeling step: the dicing die-bonding sheet on which the cuts have been formed is subjected to a force from the substrate side, and the semiconductor chip is peeled from the pressure-sensitive adhesive layer together with the film-like adhesive after the cuts have been formed (hereinafter, the peeling step may be simply referred to as "peeling step").
In the method for manufacturing a semiconductor device of the present invention, the amount of chips generated in the dicing step can be significantly reduced by using the method for manufacturing a semiconductor chip of the present invention.
In this way, in the peeling step, the occurrence of a pickup failure of the semiconductor chip provided with the film-like adhesive (i.e., the semiconductor chip with the film-like adhesive) is suppressed.
A method for manufacturing the semiconductor device will be described below with reference to fig. 8. Fig. 8 is a sectional view schematically illustrating an embodiment of a method for manufacturing a semiconductor device according to the present invention. Here, a manufacturing method in the case of using the dicing die bonding sheet shown in fig. 1 will be described. Fig. 8 shows only a cross section of the dicing die bonding sheet and the semiconductor chip.
< stripping step >
As shown in fig. 8, in the peeling step, a force is applied to the dicing die-bonding sheet 101 after the notch 10 is formed from the base material 11 side, and the semiconductor chip 9 is peeled off (i.e., picked up) from the adhesive layer 12 together with the film-like adhesive 13 after cutting.
Here, the following examples are disclosed: the protrusion (i.e., the knock pin) 70 is protruded from a push-up portion (not shown) of the manufacturing apparatus of the semiconductor device, and the tip portion of the protrusion 70 pushes up the dicing die bonding sheet 101 from the base material 11 side, thereby applying a force to the intermediate structure 201 in which the notch 10 and the semiconductor chip 9 are formed, along the protruding direction of the protrusion 70. At this time, the push-up conditions such as the amount of protrusion (i.e., push-up amount) of the protrusion 70, the speed of protrusion (i.e., push-up speed), the retention time of the protruding state (i.e., push-up waiting time), and the like can be appropriately adjusted. The number of the projections 70 is not particularly limited as long as it is appropriately selected.
In the peeling step, a known method can be used for pushing up the dicing die bonding sheet 101, and examples thereof include, in addition to the method of pushing up by the bump as described above: a method of pushing up the dicing chip bonding sheet 101 by moving a slider along the dicing chip bonding sheet 101.
In addition, the following examples are disclosed herein: the semiconductor chip 9 is pulled up by the pulling-up portion 71 of the manufacturing apparatus of the semiconductor device, whereby the semiconductor chip 9 is peeled off from the adhesive layer 12 together with the film-like adhesive 13. Here, the pull direction of the semiconductor chip 9 is indicated by an arrow I.
As a method for pulling up the semiconductor chip 9, a known method can be used, and examples thereof include: and a method of sucking the surface of the semiconductor chip 9 by a vacuum chuck and pulling it.
In the peeling step, by using the dicing die bonding sheet 101 of the present invention and using the method for manufacturing a semiconductor chip of the present invention, the occurrence of a pickup failure of the semiconductor chip 9 with the film-like adhesive is suppressed.
In the method for manufacturing a semiconductor device of the present invention, as described above, by using the dicing die-bonding sheet in which the adhesive force of the adhesive layer to the film-like adhesive in the peeling step is a specific value or less, the semiconductor chip with the film-like adhesive can be easily peeled from the adhesive layer and picked up without curing the adhesive layer by energy ray irradiation or the like. Further, since the semiconductor chip with the film-like adhesive can be picked up without curing the adhesive layer, the manufacturing process of the semiconductor device can be simplified.
In the method for manufacturing a semiconductor device of the present invention, a semiconductor chip (i.e., a semiconductor chip with a film-like adhesive) peeled off (i.e., picked up) together with the film-like adhesive can be used, and thereafter, a semiconductor device is manufactured by the same method as the conventional method, i.e., by a step of bonding the semiconductor chip to a circuit surface of a substrate with the film-like adhesive chip. For example, the semiconductor chip is die-bonded to a circuit surface of a substrate with a film-like adhesive, 1 or more semiconductor chips are further stacked on the semiconductor chip as necessary, wire-bonded, and then the whole is sealed with a resin to form a semiconductor package. Then, the semiconductor package may be used to fabricate a target semiconductor device.
Examples
The present invention will be described in more detail below with reference to specific examples. However, the present invention is not limited to the examples shown below.
In addition, hereinafter, the unit of time "msec" means "msec".
[ example 1]
< production of dicing die-bonding sheet >
A film-like adhesive (ADWILLLE 61-25, 25 μm thick, manufactured by Linekuke K.K.) was attached to a dicing sheet (substrate 80 μm thick, adhesive layer 30 μm thick) having a non-energy ray-curable adhesive layer on a substrate at room temperature. In this way, a dicing die-bonding sheet is obtained which has an adhesive layer on the base material and a film-like adhesive on the adhesive layer.
The pressure-sensitive adhesive layer of the dicing sheet used here contains an acrylic polymer (weight-average molecular weight of 450000, glass transition temperature of-31 ℃) 100 parts by mass obtained by copolymerizing 2-ethylhexyl acrylate (hereinafter, sometimes simply referred to as "2 EHA") (60 parts by mass), methyl methacrylate (hereinafter, sometimes simply referred to as "MMA") (30 parts by mass), and 2-hydroxyethyl acrylate (hereinafter, sometimes simply referred to as "HEA") (10 parts by mass) as a pressure-sensitive adhesive resin, and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 "manufactured by TOYO INK co., ltd.) (18.85) parts by mass as a crosslinking agent.
The elongation at break and elastic modulus of the pressure-sensitive adhesive layer and the adhesive strength to the film-like adhesive, which were measured by the following methods, are shown in table 1.
(measurement of elongation at Break and elastic modulus of adhesive layer)
The adhesive layer was cut out so that the length was 30mm, the width was 10mm, and the thickness was 0.03mm, to obtain a test piece.
Subsequently, the test piece was set in a measuring apparatus ("Autograph" manufactured by Shimadzu corporation). At this time, the test piece was clamped by the chucks from both ends in the longitudinal direction to a 10mm length portion, so that the length of the measurement target portion of the test piece was 10mm.
Subsequently, the test piece was stretched at a stretching speed of 1000mm/min at a temperature of 23 ℃ and a relative humidity of 50% in the longitudinal direction of the test piece, and the elongation at break and the elastic modulus of the pressure-sensitive adhesive layer were measured.
(measurement of adhesive force of adhesive layer to film adhesive)
The dicing die-bonding sheet was cut out to have a width of 25mm and a length of 200mm to obtain a test piece.
Subsequently, the test piece was attached to the adhesive surface of the adhesive sheet with a film-like adhesive at normal temperature (23 ℃).
Next, the laminate of the substrate and the pressure-sensitive adhesive layer was peeled from the film-like adhesive at a peeling speed of 300mm/min at a peeling speed of 180 ° so that the surfaces of the film-like adhesive and the pressure-sensitive adhesive layer in contact with each other were at an angle of 180 ° at normal temperature (23 ℃), and the peeling force at this time was measured to obtain the adhesive force (mN/25 mm) of the pressure-sensitive adhesive layer to the film-like adhesive.
< production and evaluation of semiconductor chips >
(intermediate Structure formation Process)
The dicing die bonding sheet obtained as described above was attached to the polished surface of a 12-inch silicon wafer (thickness: 75 μm) subjected to dry polishing by using a full-automatic multifunctional wafer mounter ("ADWILL RAD-2700" manufactured by linkeko corporation) with the film-like adhesive of the dicing die bonding sheet, thereby obtaining an intermediate structure.
(cutting step)
Next, the obtained intermediate structure is fixed by attaching the exposed surface of the adhesive layer of the intermediate structure to the annular frame for dicing.
Next, a cut was formed in the intermediate structure obtained above using a cutting device ("DFD 6361" manufactured by Disco corporation). The conditions at this time are as follows. Using a dicing blade, from a silicon crystalThe surface of the sheet was penetrated with the film-like adhesive and cut to a depth of 20 μm from the surface of the pressure-sensitive adhesive layer on the side provided with the film-like adhesive, thereby forming a slit. That is, the incisions are formed in the intermediate structure so as not to reach the base material, and the depth T of the incisions in the adhesive layer is set to be equal to 2 Relative to the thickness T of the adhesive layer 1 Ratio (T) 2 /T 1 ) Set to 0.67. The width W of the cutter blade was 30 to 35 μm, the angle theta of the tip portion was 30 DEG, and the length L in the diameter direction was 9 to 10 μm, and the rotational speed of the cutter blade was 40000rpm, and the moving speed was designed to be 50mm/sec. Further, cutting was performed while flowing cutting water at a rate of 1L/min to the position where cutting was being performed.
When the surface of the silicon wafer is viewed from above, dicing is performed in 2 orthogonal directions at intervals of 8mm, that is, so that the silicon chips have a size of 8mm × 8 mm.
(evaluation of pickup adaptability of semiconductor chip)
Subsequently, a notch was formed, and the intermediate structure having the silicon chip formed thereon was set on a pickup and die bonding apparatus ("BESTEM-D02" manufactured by Machinery). Then, at room temperature, the push-up speed was set to 20mm/sec, the holding time was set to 300msec, and the push-up amount was set to a specific value, and the dicing die-bonding sheet after forming the notch was subjected to a force from the base material side by a 5-pin push-up method to push up the intermediate structure after forming the notch and the silicon chip, and the obtained semiconductor chip with the film-like adhesive was attempted to be peeled (i.e., picked up) from the adhesive layer using a chuck having a size of a portion from which the semiconductor chip was peeled of 8mm × 8 mm. The pushing up of the intermediate structure and the peeling off of the semiconductor chip with the film-like adhesive were continued while changing the pushing up amount, and the pushing up amount was continuously performed 30 times, and the minimum value of the pushing up amount that could be performed without any abnormality was obtained as an evaluation index of the picking up suitability of the semiconductor chip with the film-like adhesive. The surfaces of the picked-up base material and the pressure-sensitive adhesive layer were observed with a scanning electron microscope (SEM, "VE-9800" manufactured by KEYENCE) to confirm the amount of chips on the dicing lines. The results are shown in Table 1.
< production of dicing die-bonding sheet, production and evaluation of semiconductor chip >
[ example 2]
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 1. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer, and the adhesive force to the film-like adhesive are shown in table 1.
(adhesive layer)
The pressure-sensitive adhesive layer contained 100 parts by mass of an acrylic polymer (weight-average molecular weight 700000, glass transition temperature-63 ℃) obtained by copolymerizing 2EHA (85 parts by mass) and HEA (15 parts by mass) as a pressure-sensitive adhesive resin, and 28.28 parts by mass of a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 manufactured by TOYO INK Co., ltd.) as a crosslinking agent.
[ example 3]
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness of 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 1. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer, and the adhesive force to the film-like adhesive are shown in table 1.
(adhesive layer)
The pressure-sensitive adhesive layer contained 100 parts by mass of an acrylic polymer (weight-average molecular weight 850000, glass transition temperature-61 ℃) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass) as a pressure-sensitive adhesive resin, and 37.70 parts by mass of a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 manufactured by TOYO INK Co., ltd.).
[ example 4]
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 1. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer, and the adhesive force to the film-like adhesive are shown in table 1.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight-average molecular weight of 450000, glass transition temperature of-31 ℃) obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass) and HEA (10 parts by mass) as a pressure-sensitive adhesive resin (100 parts by mass), and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515, manufactured by TOYO INK) as a crosslinking agent (56.55 parts by mass).
[ example 5]
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 1. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer, and the adhesive force to the film-like adhesive are shown in table 1.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight average molecular weight 300000, glass transition temperature-30 ℃) obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass), and 4-hydroxybutyl acrylate (hereinafter, may be abbreviated as "4 HBA") (10 parts by mass) as a pressure-sensitive adhesive resin, and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 "available from TOYO INK) as a crosslinking agent (15.19 parts by mass).
Comparative example 1
< production of dicing die-bonding sheet >
A dicing die-bonding sheet was manufactured by the same method as in example 1.
< production and evaluation of semiconductor chips >
(intermediate Structure formation Process)
An intermediate structure was obtained by the same method as in example 1.
(cutting Process)
Next, the obtained intermediate structure is fixed by attaching the exposed surface of the adhesive layer of the intermediate structure to the annular frame for dicing.
Next, a cut was formed in the obtained intermediate structure by using a cutting device ("DFD 6361" manufactured by Disco corporation). The conditions at this time are as follows. The film-like adhesive and the adhesive layer were penetrated from the surface of the silicon wafer by a dicing blade, and the silicon wafer was cut to a depth of 20 μm from the surface of the substrate on the side having the adhesive layer, thereby forming a notch. That is, the slits are formed in the intermediate structure over the entire thickness direction of the adhesive layer, and the depth T of the slits in the adhesive layer is set to be equal to 2 Relative to the thickness T of the adhesive layer 1 Ratio of (T) 2 /T 1 ) Set to 1, and a notch was also formed in the base material, and the depth T of the notch in the base material was set to 3 Set to 20 μm. The rotation speed and the moving speed of the cutter and the cutter were the same as those in example 1.
When the surface of the silicon wafer is viewed from above, dicing is performed in 2 orthogonal directions so that the silicon chips have a size of 8mm × 8mm at intervals of 8 mm.
(evaluation of pickup adaptability of semiconductor chip)
In the same manner as in example 1, the minimum value of the pushed-up amount was determined by attempting to peel (i.e., pick up) the semiconductor chip with the film-like adhesive from the pressure-sensitive adhesive layer, and the amount of chips in the dicing line was checked. The results are shown in Table 2.
Comparative example 2
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 2. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer are shown in table 2 together with the adhesive force to the film-like adhesive.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight-average molecular weight: 510000, glass transition temperature: 44 ℃ C.) (100 parts by mass) obtained by copolymerizing 2EHA (70 parts by mass), MMA (20 parts by mass), and HEA (10 parts by mass) as a pressure-sensitive adhesive resin, and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 manufactured by TOYO INK Co., ltd.) (18.85 parts by mass) as a crosslinking agent.
Comparative example 3
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 2. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer are shown in table 2 together with the adhesive force to the film-like adhesive.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight average molecular weight 700000, glass transition temperature-66 ℃ C.) (100 parts by mass) obtained by copolymerizing 2EHA (90 parts by mass) and HEA (10 parts by mass) as a pressure-sensitive adhesive resin, and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515, manufactured by TOYO INK Co., ltd.) (18.85 parts by mass) as a crosslinking agent.
Comparative example 4
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 2. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer are shown in table 2 together with the adhesive force to the film-like adhesive.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight average molecular weight 700000, glass transition temperature-63 ℃ C.) (100 parts by mass) obtained by copolymerizing 2EHA (85 parts by mass) and HEA (15 parts by mass) as a pressure-sensitive adhesive resin, and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515, manufactured by TOYO INK Co., ltd.) (28.28 parts by mass) as a crosslinking agent.
Comparative example 5
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 2. The elongation at break of the pressure-sensitive adhesive layer and the adhesive force to the film-like adhesive are shown in table 2. Further, the elastic modulus of the adhesive layer could not be measured.
(adhesive layer)
The pressure-sensitive adhesive layer contained 100 parts by mass of an acrylic polymer (weight-average molecular weight 850000, glass transition temperature-61 ℃) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass) as a pressure-sensitive adhesive resin, and 113.10 parts by mass of a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 manufactured by TOYO INK Co., ltd.) as a crosslinking agent.
Comparative example 6
Although an attempt was made to produce a dicing die-bonding sheet by the same method as in example 1 except that a dicing sheet having the following layer (thickness of 30 μm) as a pressure-sensitive adhesive layer was used, a film-like adhesive could not be attached to the pressure-sensitive adhesive layer, and a dicing die-bonding sheet could not be produced.
(adhesive layer)
The pressure-sensitive adhesive layer contained 100 parts by mass of an acrylic polymer (weight-average molecular weight 850000, glass transition temperature-61 ℃) obtained by copolymerizing 2EHA (80 parts by mass) and HEA (20 parts by mass) as a pressure-sensitive adhesive resin, and 188.50 parts by mass of a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 manufactured by TOYO INK Co., ltd.).
Comparative example 7
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the minimum value of the pushed-up amount was obtained to confirm the amount of chips of the dicing line. The results are shown in Table 3. The elongation at break and the elastic modulus of the pressure-sensitive adhesive layer are shown in table 3 together with the adhesive force to the film-like adhesive.
(adhesive layer)
The pressure-sensitive adhesive layer contained an acrylic polymer (weight-average molecular weight of 450000, glass transition temperature of-31 ℃) obtained by copolymerizing 2EHA (60 parts by mass), MMA (30 parts by mass) and HEA (10 parts by mass) as a pressure-sensitive adhesive resin (100 parts by mass), and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515, manufactured by TOYO INK) as a crosslinking agent (94.25 parts by mass).
Comparative example 8
A dicing die-bonded sheet and a semiconductor chip were produced in the same manner as in example 1 except that a dicing sheet having the following layers (thickness 30 μm) as a pressure-sensitive adhesive layer was used, and the amount of chips in the dicing line was checked. The results are shown in Table 3. The elongation at break of the pressure-sensitive adhesive layer and the adhesive force to the film-like adhesive are shown in table 3. In the present comparative example, the semiconductor chip with the film-like adhesive cannot be peeled off (i.e., picked up) from the pressure-sensitive adhesive layer, and the minimum value of the amount of push-up cannot be obtained. In addition, the elastic modulus of the adhesive layer could not be measured.
(adhesive layer)
The pressure-sensitive adhesive layer contained, as a pressure-sensitive adhesive resin, an acrylic polymer (weight-average molecular weight 720000, glass transition temperature-27 ℃) obtained by copolymerizing lauryl acrylate (hereinafter sometimes abbreviated as "LA") (80 parts by mass) and HEA (20 parts by mass) (100 parts by mass), and a tolylene diisocyanate trimer adduct of trimethylolpropane (BHS 8515 "manufactured by TOYO INK corporation) as a crosslinking agent (137.70 parts by mass).
[ Table 1]
[ Table 2]
[ Table 3]
In examples 1 to 5, dicing die-bonding sheets in which the thickness of the adhesive layer was in the range of 20 μm to 50 μm and the elongation at break of the adhesive layer was in the range of 8.7% to 40.2% were used, and cuts reaching the adhesive layer from the surface of the semiconductor wafer and not reaching the base material were formed in the intermediate structure in the dicing step. As a result, it was found from the above results that the minimum value of the push-up amount was 200 μm or less, and the semiconductor chip with the film adhesive was excellent in pick-up adaptability. In particular, in examples 2 to 4 in which the adhesive force of the adhesive layer to the film-like adhesive was smaller, the minimum value of the above-described pushed-up amount was smaller, and the semiconductor chip with the film-like adhesive was extremely excellent in pickup adaptability. In examples 1 to 5, the number of chips of the string was small, and in particular, the number of chips was extremely small in examples 2 to 4.
Thus, the amount of chips of the dicing line is correlated with the pick-up suitability of the semiconductor chip with the film-like adhesive.
In examples 1 to 5, there was also no so-called chip scattering in which semiconductor chips were scattered when the semiconductor wafer was diced.
In contrast, in comparative example 1, the intermediate structure in the dicing step was provided with the cuts extending from the front surface of the semiconductor wafer to the base material, and as a result, although the pressure-sensitive adhesive layer was the same as in example 1, the minimum value of the push-up amount was 300 μm, and the semiconductor chip with the film-like adhesive was poor in pick-up adaptability.
In comparative examples 2 to 3, the elongation at break of the pressure-sensitive adhesive layer was too large, and the minimum value of the push-up amount was large, and the suitability for picking up the semiconductor chip with the film-like adhesive was poor.
In comparative example 4, the elongation at break of the pressure-sensitive adhesive layer was too large, and accordingly, a large amount of chips remained on the wire, and the minimum value of the push-up amount was also high as described below.
In comparative examples 5 and 7, the elongation at break of the pressure-sensitive adhesive layer was too small, and cracks were observed at positions other than the intended position of the pressure-sensitive adhesive layer, resulting in poor properties of the pressure-sensitive adhesive layer. The dicing die-bonding sheet of the present comparative example is not suitable for practical use.
In comparative example 6, since the content of the crosslinking agent in the pressure-sensitive adhesive layer was too large and there was a problem in the composition of the pressure-sensitive adhesive layer, the film-like adhesive could not be applied to the pressure-sensitive adhesive layer as described above, and the dicing die-bonding sheet could not be produced.
In comparative example 8, the type of adhesive resin in the adhesive layer was not suitable, the elongation at break of the adhesive layer was too large, the adhesive force of the adhesive layer to the film-like adhesive was too large, and the semiconductor chip with the film-like adhesive could not be picked up as described above.
In comparative examples 1 to 4 and 8, the number of chips of the string was large, in comparative examples 1 to 4, the minimum value of the pushed-up amount was 250 μm or more, in comparative example 8, the measurement could not be performed, while in comparative examples 5 and 7, the number of chips of the string was small, and the minimum value of the pushed-up amount was 75 μm. Thus, in these comparative examples, the amount of chips of the dicing line also correlated with the pick-up suitability of the semiconductor chip with the film-like adhesive.
In comparative examples 1 to 5 and 7, the semiconductor chip with the film-like adhesive that failed in pickup was observed by SEM, and the pressure-sensitive adhesive layer and the base material at the position corresponding to the semiconductor chip were observed, and as a result, it was confirmed that the chips of the dicing lines were in close contact with the film-like adhesive, and the chips remaining on the dicing lines were one cause of pickup failure. In comparative examples 1, 3 and 8, the number of chips remaining on the wire was extremely large.
In comparative examples 5 and 7, chip scattering was observed, but in comparative examples 1 to 4 and 8, chip scattering was not observed.
Industrial applicability
The present invention can be used for manufacturing a semiconductor device.
Claims (5)
1. A dicing die-bonding sheet comprising a base material and, superimposed thereon, a pressure-sensitive adhesive layer and a film-like adhesive,
the thickness of the adhesive layer is 20-50 μm,
the elongation at break of the adhesive layer is 5 to 50 percent,
the elongation at break of the adhesive layer was determined as follows: the pressure-sensitive adhesive layer having a width of 10mm and a thickness of 0.03mm was fixed at two points so that the distance between the fixed points became 10mm, the pressure-sensitive adhesive layer was stretched at a stretching speed of 1000mm/min between the fixed points, and the elongation of the pressure-sensitive adhesive layer at the time of fracture of the pressure-sensitive adhesive layer was measured.
2. The dicing die-bonding sheet according to claim 1, wherein,
the adhesive layer is non-energy-ray curable.
3. The dicing die-bonding sheet according to claim 1 or 2, wherein,
the adhesive force of the adhesive layer to the film-shaped adhesive is 35mN/25mm to 300mN/25mm.
4. A method for manufacturing a semiconductor chip using the dicing die-bonding sheet according to any one of claims 1 to 3, comprising the steps of:
forming an intermediate structure in which a semiconductor wafer is provided on a surface of the film-like adhesive on the dicing die-bonding sheet opposite to a side on which the adhesive layer is provided; and
and forming a cut on the intermediate structure from the surface of the semiconductor wafer to the adhesive layer but not to the base material by using a dicing blade, thereby dividing the semiconductor wafer to form semiconductor chips.
5. A method for manufacturing a semiconductor device, comprising, after the step of forming the semiconductor chip is performed by the method for manufacturing a semiconductor chip according to claim 4, the steps of:
the dicing die-bonding sheet on which the cuts have been formed is subjected to a force from the base material side thereof, and the semiconductor chip is peeled from the adhesive layer together with the film-like adhesive after cutting.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016046904 | 2016-03-10 | ||
| JP2016-046904 | 2016-03-10 | ||
| PCT/JP2017/007103 WO2017154619A1 (en) | 2016-03-10 | 2017-02-24 | Dicing die bonding sheet, method for producing semiconductor chip and method for manufacturing semiconductor device |
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| CN108713241A CN108713241A (en) | 2018-10-26 |
| CN108713241B true CN108713241B (en) | 2023-04-11 |
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| JP (1) | JP6805233B2 (en) |
| KR (1) | KR102637302B1 (en) |
| CN (1) | CN108713241B (en) |
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| JP6978890B2 (en) * | 2017-10-16 | 2021-12-08 | リンテック株式会社 | Manufacturing method of dicing die bonding sheet and semiconductor chip |
| EP3760423A1 (en) * | 2019-07-02 | 2021-01-06 | Essilor International | Method for making optical lenses using 3d printed functional wafers |
| TW202141600A (en) * | 2020-03-27 | 2021-11-01 | 日商琳得科股份有限公司 | Semiconductor device manufacturing sheet |
| JP7005805B1 (en) | 2021-04-28 | 2022-02-10 | 藤森工業株式会社 | tape |
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|---|---|---|---|---|
| JP2005235795A (en) * | 2004-02-17 | 2005-09-02 | Sumitomo Bakelite Co Ltd | Adhesive tape for processing semiconductor wafer |
| CN101772831A (en) * | 2007-07-19 | 2010-07-07 | 积水化学工业株式会社 | Dicing/die bonding tape and method for manufacturing semiconductor chip |
| CN101821833A (en) * | 2007-10-09 | 2010-09-01 | 日立化成工业株式会社 | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
| JP2012222002A (en) * | 2011-04-04 | 2012-11-12 | Nitto Denko Corp | Dicing die-bonding film and semiconductor device manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4550680B2 (en) | 2005-07-12 | 2010-09-22 | 古河電気工業株式会社 | Adhesive tape for fixing semiconductor wafers |
| JP5069662B2 (en) * | 2007-11-12 | 2012-11-07 | リンテック株式会社 | Adhesive sheet |
| JP5786505B2 (en) * | 2011-07-08 | 2015-09-30 | 日立化成株式会社 | Dicing and die bonding integrated tape |
| JP6287200B2 (en) * | 2013-12-27 | 2018-03-07 | 日立化成株式会社 | Dicing tape for dicing and die bonding integrated tape |
-
2017
- 2017-02-24 SG SG11201807714QA patent/SG11201807714QA/en unknown
- 2017-02-24 WO PCT/JP2017/007103 patent/WO2017154619A1/en active Application Filing
- 2017-02-24 KR KR1020187025535A patent/KR102637302B1/en active Active
- 2017-02-24 JP JP2018504372A patent/JP6805233B2/en active Active
- 2017-02-24 CN CN201780015580.3A patent/CN108713241B/en active Active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005235795A (en) * | 2004-02-17 | 2005-09-02 | Sumitomo Bakelite Co Ltd | Adhesive tape for processing semiconductor wafer |
| CN101772831A (en) * | 2007-07-19 | 2010-07-07 | 积水化学工业株式会社 | Dicing/die bonding tape and method for manufacturing semiconductor chip |
| CN101821833A (en) * | 2007-10-09 | 2010-09-01 | 日立化成工业株式会社 | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
| JP2012222002A (en) * | 2011-04-04 | 2012-11-12 | Nitto Denko Corp | Dicing die-bonding film and semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI702645B (en) | 2020-08-21 |
| JPWO2017154619A1 (en) | 2019-01-10 |
| TW201802900A (en) | 2018-01-16 |
| CN108713241A (en) | 2018-10-26 |
| KR20180122618A (en) | 2018-11-13 |
| KR102637302B1 (en) | 2024-02-15 |
| WO2017154619A1 (en) | 2017-09-14 |
| SG11201807714QA (en) | 2018-10-30 |
| JP6805233B2 (en) | 2020-12-23 |
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