CN108922893A - pixel array substrate - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000003086 colorant Substances 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 107
- 239000000463 material Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 7
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- 239000007769 metal material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum Tin oxide Chemical compound 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
一种像素阵列基板包括基板、数据线、多条扫描线、多个子像素结构、第一绝缘层、第二绝缘层、触控走线、第三绝缘层以及共用电极。多个子像素结构与同一数据线电性连接。多个子像素结构分别用以显示不同的颜色且分别与多条扫描线电性连接。每一子像素结构包括主动元件及像素电极。像素电极设置于第一绝缘层上。第二绝缘层覆盖像素电极。触控走线设置于第二绝缘层上。第三绝缘层覆盖触控走线的一部分。共用电极设置于第三绝缘层上,且具有与像素电极重叠的多个分支。
A pixel array substrate includes a substrate, data lines, multiple scan lines, multiple sub-pixel structures, a first insulating layer, a second insulating layer, touch wiring, a third insulating layer and a common electrode. Multiple sub-pixel structures are electrically connected to the same data line. Multiple sub-pixel structures are used to display different colors and are electrically connected to multiple scan lines respectively. Each sub-pixel structure includes active elements and pixel electrodes. The pixel electrode is disposed on the first insulation layer. The second insulation layer covers the pixel electrode. The touch traces are arranged on the second insulation layer. The third insulation layer covers a part of the touch trace. The common electrode is disposed on the third insulating layer and has a plurality of branches overlapping the pixel electrode.
Description
技术领域technical field
本发明有关于一种基板,且特别是有关于一种像素阵列基板。The present invention relates to a substrate, and in particular to a pixel array substrate.
背景技术Background technique
近年来,显示面板在日常生活中扮演着不可或缺的角色,尤其在移动通信装置上,搭载触控功能的显示面板更已成为主流趋势。而相关的面板厂商在不断提升触控显示面板的显示品质的同时,如何维持生产成本让产品更具竞争优势也是各厂所致力于的方向之一。其中,三闸型(Tri-gate,三栅极型)显示面板因使用数量较少的源极驱动晶片(SourceIC),而具有较好的价格竞争力。然而,显示面板的像素解析度不断地提高,使得三闸型显示面板面临充电率不足的问题。In recent years, display panels have played an indispensable role in daily life, especially in mobile communication devices, display panels equipped with touch functions have become a mainstream trend. While related panel manufacturers are constantly improving the display quality of touch display panels, how to maintain production costs and make products more competitive is also one of the directions that each factory is committed to. Among them, the Tri-gate (Tri-gate) display panel has relatively good price competitiveness due to the use of a small number of source driver chips (Source IC). However, the pixel resolution of the display panel is continuously improved, so that the three-gate display panel faces the problem of insufficient charging rate.
发明内容Contents of the invention
本发明的一实施例提供一种像素阵列基板,其具有较佳的性能。An embodiment of the present invention provides a pixel array substrate with better performance.
本发明的一实施例的一种像素阵列基板,包括基板、数据线、多条扫描线、多个子像素结构、第一绝缘层、第二绝缘层、触控走线、第三绝缘层以及共用电极。基板具有显示区及该显示区外的周边区。数据线设置于基板。多条扫描线设置于基板且与数据线交错。多个子像素结构设置于基板的显示区,且与同一数据线电性连接,其中多个子像素结构分别用以显示不同的颜色,且分别与不同的多条扫描线电性连接。每一子像素结构包括主动元件以及与主动元件电性连接的像素电极。第一绝缘层覆盖主动元件,其中像素电极设置于第一绝缘层上。第二绝缘层设置于第一绝缘层上,且覆盖像素电极。触控走线设置于第二绝缘层上。第三绝缘层设置于第二绝缘层上,且覆盖触控走线的一部分。共用电极设置于第三绝缘层上,与触控走线电性连接,且具有与像素电极重叠的多个分支。A pixel array substrate according to an embodiment of the present invention includes a substrate, data lines, multiple scan lines, multiple sub-pixel structures, a first insulating layer, a second insulating layer, touch wiring, a third insulating layer, and a common electrode. The substrate has a display area and a peripheral area outside the display area. The data lines are arranged on the substrate. A plurality of scanning lines are arranged on the substrate and intersect with the data lines. Multiple sub-pixel structures are arranged in the display area of the substrate and are electrically connected to the same data line, wherein the multiple sub-pixel structures are respectively used to display different colors and are respectively electrically connected to different scanning lines. Each sub-pixel structure includes an active element and a pixel electrode electrically connected to the active element. The first insulating layer covers the active element, wherein the pixel electrode is disposed on the first insulating layer. The second insulating layer is disposed on the first insulating layer and covers the pixel electrodes. The touch wires are disposed on the second insulating layer. The third insulating layer is disposed on the second insulating layer and covers a part of the touch wiring. The common electrode is disposed on the third insulating layer, is electrically connected with the touch wire, and has a plurality of branches overlapping with the pixel electrodes.
本发明的一实施例的一种像素阵列基板,包括基板、数据线、扫描线、子像素结构、周边走线、第一绝缘层、第一转接图案、第二绝缘层、触控走线、第三绝缘层、共用电极及第二转接图案。基板具有显示区及该显示区外的周边区。基板具有显示区以及显示区外的周边区。数据线设置于基板。扫描线设置于基板且与数据线交错。子像素结构设置于基板的显示区,且与数据线及扫描线电性连接。其中子像素结构包括主动元件以及与主动元件电性连接的像素电极。周边走线设置于基板的周边区,且具有一参考电位。第一绝缘层覆盖主动元件以及周边走线,且具有与周边走线重叠的第一接触窗,其中像素电极设置在位于显示区的第一绝缘层上。第一转接图案设置在位于周边区的第一绝缘层上且通过第一接触窗与周边走线电性连接。第二绝缘层设置于第一绝缘层上,覆盖像素电极及第一转接图案,且具有与第一转接图案重叠的第二接触窗。触控走线设置于第二绝缘层上。第三绝缘层设置于第二绝缘层上,覆盖触控走线的一部分,且具有与第二接触窗连通的第三接触窗。共用电极设置于第三绝缘层上,与触控走线电性连接,且具有与像素电极重叠的多个分支。第二转接图案设置在位于周边区的第三绝缘层上,且通过第二接触窗及第三接触窗与第一转接图案电性连接,而共用电极通过第一转接图案及第二转接图案电性连接至周边走线。A pixel array substrate according to an embodiment of the present invention, including a substrate, data lines, scanning lines, sub-pixel structures, peripheral wiring, a first insulating layer, a first transfer pattern, a second insulating layer, and touch wiring , a third insulating layer, a common electrode and a second transfer pattern. The substrate has a display area and a peripheral area outside the display area. The substrate has a display area and a peripheral area outside the display area. The data lines are arranged on the substrate. The scanning lines are arranged on the substrate and intersect with the data lines. The sub-pixel structure is arranged in the display area of the substrate and is electrically connected with the data line and the scan line. The sub-pixel structure includes an active element and a pixel electrode electrically connected to the active element. The peripheral wiring is arranged in the peripheral area of the substrate and has a reference potential. The first insulating layer covers the active element and the peripheral wiring, and has a first contact window overlapping with the peripheral wiring, wherein the pixel electrode is arranged on the first insulating layer located in the display area. The first transfer pattern is disposed on the first insulating layer in the peripheral area and is electrically connected to the peripheral wiring through the first contact window. The second insulating layer is disposed on the first insulating layer, covers the pixel electrode and the first transfer pattern, and has a second contact window overlapping with the first transfer pattern. The touch wires are disposed on the second insulating layer. The third insulating layer is disposed on the second insulating layer, covers a part of the touch trace, and has a third contact window communicating with the second contact window. The common electrode is disposed on the third insulating layer, is electrically connected with the touch wire, and has a plurality of branches overlapping with the pixel electrodes. The second transfer pattern is disposed on the third insulating layer located in the peripheral area, and is electrically connected to the first transfer pattern through the second contact window and the third contact window, and the common electrode is connected to the first transfer pattern through the first transfer pattern and the second contact window. The transfer pattern is electrically connected to the surrounding traces.
在本发明的一实施例中,上述的像素阵列基板的第一绝缘层的厚度大于第二绝缘层的厚度以及第三绝缘层的厚度,其中第一绝缘层的厚度为 4000埃至10000埃,第二绝缘层的厚度为1000埃至6000埃,而第三绝缘层的厚度为1000埃至6000埃。In an embodiment of the present invention, the thickness of the first insulating layer of the above-mentioned pixel array substrate is greater than the thickness of the second insulating layer and the thickness of the third insulating layer, wherein the thickness of the first insulating layer is 4000 angstroms to 10000 angstroms, The second insulating layer has a thickness of 1000 angstroms to 6000 angstroms, and the third insulating layer has a thickness of 1000 angstroms to 6000 angstroms.
在本发明的一实施例中,上述的像素阵列基板的触控走线与数据线在第一方向上延伸,像素电极在第一方向上具有宽度W1,像素电极在与第一方向垂直的第二方向上具有宽度W2,而W1<W2。In an embodiment of the present invention, the above-mentioned touch wires and data lines of the pixel array substrate extend in a first direction, the pixel electrode has a width W1 in the first direction, and the pixel electrode has a width W1 in the first direction. The two directions have a width W2, and W1<W2.
在本发明的一实施例中,上述的像素阵列基板的共用电极的多个分支包括多个第一直线段、多个第二直线段以及多个弯曲段,多个第一直线段的延伸方向与多个第二直线段的延伸方向不同,多个弯曲段分别连接于多个第一直线段与多个第二直线段之间,且多个弯曲段与触控走线重叠。In an embodiment of the present invention, the plurality of branches of the common electrode of the above-mentioned pixel array substrate includes a plurality of first straight segments, a plurality of second straight segments, and a plurality of curved segments, and the extension direction of the plurality of first straight segments Different from the extension directions of the second straight segments, the bent segments are respectively connected between the first straight segments and the second straight segments, and the bent segments overlap with the touch traces.
在本发明的一实施例中,上述的像素阵列基板还包括周边走线、第一转接图案、第二转接图案。周边走线设置于基板的周边区,其中第一绝缘层设置于周边走线上且具有与周边走线重叠的第一接触窗。第一转接图案设置在位于周边区的第一绝缘层上且通过第一接触窗与周边走线电性连接。第二转接图案设置在位于周边区的第三绝缘层上,其中第二绝缘层具有第二接触窗,第三绝缘层具有第三接触窗,第二接触窗与第三接触窗相通,第二转接图案通过第二接触窗及第三接触窗与第一转接图案电性连接,而共用电极通过第一转接图案及第二转接图案电性连接至周边走线,其中第二接触窗与第三接触窗切齐。In an embodiment of the present invention, the above-mentioned pixel array substrate further includes peripheral wiring, a first transfer pattern, and a second transfer pattern. The peripheral traces are arranged on the peripheral region of the substrate, wherein the first insulating layer is disposed on the peripheral traces and has a first contact window overlapping with the peripheral traces. The first transfer pattern is disposed on the first insulating layer in the peripheral area and is electrically connected to the peripheral wiring through the first contact window. The second transfer pattern is disposed on the third insulating layer located in the peripheral area, wherein the second insulating layer has a second contact window, the third insulating layer has a third contact window, the second contact window communicates with the third contact window, and the second contact window communicates with the third contact window. The two transfer patterns are electrically connected to the first transfer pattern through the second contact window and the third contact window, and the common electrode is electrically connected to the peripheral wiring through the first transfer pattern and the second transfer pattern, wherein the second transfer pattern The contact window is aligned with the third contact window.
在本发明的一实施例中,上述的像素阵列基板的主动元件包括具有栅极以及半导体图案的薄膜晶体管,而像素阵列基板还包括第四绝缘层。第四绝缘层设置于栅极与半导体图案之间,其中第四绝缘层具有与第一接触窗相通的第四接触窗,而第一转接图案通过第一接触窗及第四接触窗与周边走线电性连接,其中第一接触窗与第四接触窗切齐。In an embodiment of the present invention, the active element of the pixel array substrate includes a thin film transistor having a gate and a semiconductor pattern, and the pixel array substrate further includes a fourth insulating layer. The fourth insulating layer is disposed between the gate and the semiconductor pattern, wherein the fourth insulating layer has a fourth contact window communicating with the first contact window, and the first transfer pattern is connected to the surrounding area through the first contact window and the fourth contact window. The traces are electrically connected, wherein the first contact window is aligned with the fourth contact window.
基于上述,本发明的实施例的像素阵列基板的共用电极与像素电极之间设置有第二绝缘层与第三绝缘层,以增加共用电极与像素电极的距离。共用电极与像素电极的距离增加时,像素电极与共用电极之间的储存电容值能降低,进而提升充电率。由此,能实现低成本及高性能的像素阵列基板。Based on the above, the second insulating layer and the third insulating layer are disposed between the common electrode and the pixel electrode of the pixel array substrate in the embodiment of the present invention, so as to increase the distance between the common electrode and the pixel electrode. When the distance between the common electrode and the pixel electrode increases, the storage capacitance between the pixel electrode and the common electrode can be reduced, thereby increasing the charging rate. Thus, a low-cost and high-performance pixel array substrate can be realized.
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合随附的附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
附图说明Description of drawings
图1为本发明的一实施例的像素阵列基板的剖面示意图。FIG. 1 is a schematic cross-sectional view of a pixel array substrate according to an embodiment of the present invention.
图2为图1的像素阵列基板的俯视示意图。FIG. 2 is a schematic top view of the pixel array substrate in FIG. 1 .
附图标记列表List of reference signs
10:像素阵列基板10: Pixel array substrate
100:基板100: Substrate
110:第四绝缘层110: The fourth insulating layer
110b:第四接触窗110b: fourth contact window
120:第一绝缘层120: first insulating layer
120a、120b:第一接触窗120a, 120b: first contact window
130:像素电极130: pixel electrode
131:第一转接图案131: The first transfer pattern
140:第二绝缘层140: second insulating layer
140b:第二接触窗140b: second contact window
150:第三绝缘层150: third insulating layer
150a、150b:第三接触窗150a, 150b: third contact window
160:共用电极160: common electrode
161:分支161: branch
161a:第一直线段161a: First straight line segment
161b:第二直线段161b: Second straight line segment
161c、161d、161e:弯曲段161c, 161d, 161e: curved sections
162:第二转接图案162: Second transfer pattern
AA:显示区AA: display area
CH:半导体图案CH: semiconductor pattern
D1:第一方向D1: first direction
D2:第二方向D2: Second direction
D3:垂直投影方向D3: vertical projection direction
DL:数据线DL: data line
H1、H2、H3:厚度H1, H2, H3: Thickness
I:区域I: area
L1、L2、L3:距离L1, L2, L3: Distance
PA:周边区PA: Peripheral Area
PL:周边走线PL: Peripheral routing
PX1、PX2、PX3:子像素结构PX1, PX2, PX3: sub-pixel structure
SL:扫描线SL: scan line
T:主动元件T: active component
D:漏极D: Drain
G:栅极G: grid
TL:触控走线TL: touch trace
S:源极S: source
W1、W2:宽度W1, W2: Width
A-A’、B-B’:剖线A-A', B-B': broken line
具体实施方式Detailed ways
现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于所附图式中。只要有可能,相同元件符号(附图标记)在附图和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals (reference numerals) are used in the drawings and description to refer to the same or like parts.
图1为本发明的一实施例的像素阵列基板10的剖面示意图。图2为图 1的像素阵列基板10的俯视示意图。特别是,图1的像素阵列基板10的显示区AA的剖面系对应图2的剖线A-A’及剖线B-B’。FIG. 1 is a schematic cross-sectional view of a pixel array substrate 10 according to an embodiment of the present invention. FIG. 2 is a schematic top view of the pixel array substrate 10 in FIG. 1 . In particular, the cross section of the display area AA of the pixel array substrate 10 in FIG. 1 corresponds to the section line A-A' and section line B-B' in FIG. 2 .
请参照图1及图2,像素阵列基板10包括基板100、数据线DL、多条扫描线SL1、SL2、SL3、多个子像素结构PX1、PX2、PX3及触控走线 TL。基板100具有显示区AA及显示区AA外的周边区PA。在本实施例中,数据线DL与触控走线TL大致上在第一方向D1上延伸,扫描线SL3、SL2、 SL1大致上在第二方向D2上延伸且沿着第一方向D1依序排列于基板100 上。举例而言,在本实施例中,第一方向D1与第二方向D2实质上互相垂直,但本发明不以此为限。1 and 2, the pixel array substrate 10 includes a substrate 100, a data line DL, a plurality of scan lines SL1, SL2, SL3, a plurality of sub-pixel structures PX1, PX2, PX3 and touch lines TL. The substrate 100 has a display area AA and a peripheral area PA outside the display area AA. In this embodiment, the data lines DL and the touch traces TL substantially extend in the first direction D1, and the scan lines SL3, SL2, and SL1 substantially extend in the second direction D2 and follow the first direction D1 sequentially. arranged on the substrate 100 . For example, in this embodiment, the first direction D1 and the second direction D2 are substantially perpendicular to each other, but the invention is not limited thereto.
多个子像素结构PX1、PX2、PX3设置于基板100的显示区AA。每一子像素结构PX1、PX2、PX3与对应的一条数据线DL及对应的一条扫描线SL1、SL2或SL3电性连接。特别是,在本实施例中,分别用以显示不同颜色(例如:红色、绿色及蓝色)的多个子像素结构PX1、PX2、PX3 与同一条数据线DL电性连接,且分别与不同的多条扫描线SL1、SL2、SL3 电性连接。也就是说,采用本实施例的像素阵列基板10的显示面板可以是三闸型(tri-gate,三栅极型)。A plurality of sub-pixel structures PX1 , PX2 , PX3 are disposed in the display area AA of the substrate 100 . Each sub-pixel structure PX1 , PX2 , PX3 is electrically connected to a corresponding data line DL and a corresponding scan line SL1 , SL2 or SL3 . In particular, in this embodiment, multiple sub-pixel structures PX1, PX2, and PX3 respectively used to display different colors (for example: red, green, and blue) are electrically connected to the same data line DL, and are respectively connected to different The multiple scan lines SL1, SL2, SL3 are electrically connected. That is to say, the display panel using the pixel array substrate 10 of this embodiment may be a tri-gate type (tri-gate, tri-gate type).
在本实施例中,每一子像素结构PX1、PX2、PX3包括主动元件T及与主动元件T电性连接的像素电极130,其中每一子像素结构PX1、PX2、 PX3的主动元件T与对应的一条数据线DL及对应的一条扫描线SL1、SL2 或SL3电性连接。在本实施例中,子像素结构PX1、PX2、PX3的像素电极130在第一方向D1上具有宽度W1(标示于图2),而像素电极130在第二方向D2上具有宽度W2(标示于图2),且像素电极130的宽度W2 大于宽度W1,但本发明不以此为限。In this embodiment, each sub-pixel structure PX1, PX2, PX3 includes an active element T and a pixel electrode 130 electrically connected to the active element T, wherein the active element T of each sub-pixel structure PX1, PX2, PX3 is connected to the corresponding One of the data lines DL is electrically connected to one of the corresponding scan lines SL1, SL2 or SL3. In this embodiment, the pixel electrode 130 of the sub-pixel structures PX1, PX2, PX3 has a width W1 (marked in FIG. 2 ) in the first direction D1, and the pixel electrode 130 has a width W2 (marked in FIG. 2 ) in the second direction D2. 2 ), and the width W2 of the pixel electrode 130 is greater than the width W1, but the present invention is not limited thereto.
请参照图1,在本实施例中,主动元件T包括栅极G、源极S、漏极D 及半导体图案CH。栅极G设置于基板100上,且与对应的一条扫描线SL1、 SL2或SL3电性连接。源极S设置于基板100上,且与对应的一条数据线 DL电性连接。源极S与漏极D分别与半导体图案CH的不同两区电性连接。举例而言,在本实施例中,半导体图案CH的结构可为单层或多层;半导体图案CH的材质可包括非晶硅、多晶硅、微晶硅、单晶硅、有机半导体材料、氧化物半导体材料(例如:铟锌氧化物、铟镓锌氧化物、或是其它合适的材料、或上述的组合)、或其他合适的材料、或含有掺杂物 (dopant)于上述材料中、或上述的组合。Referring to FIG. 1 , in this embodiment, the active device T includes a gate G, a source S, a drain D and a semiconductor pattern CH. The gate G is disposed on the substrate 100 and is electrically connected to a corresponding scan line SL1 , SL2 or SL3 . The source S is disposed on the substrate 100 and is electrically connected to a corresponding data line DL. The source S and the drain D are respectively electrically connected to two different regions of the semiconductor pattern CH. For example, in this embodiment, the structure of the semiconductor pattern CH can be single-layer or multi-layer; the material of the semiconductor pattern CH can include amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxides Semiconductor materials (for example: indium zinc oxide, indium gallium zinc oxide, or other suitable materials, or a combination of the above), or other suitable materials, or containing dopant in the above materials, or the above The combination.
在本实施例中,像素阵列基板10还包括第四绝缘层110,设置于栅极 G与半导体图案CH之间。在本实施例中,半导体图案CH可以选择性地设置在栅极G上方,进而形成底部栅极型薄膜晶体管(Bottom-gate TFT)。然而,本发明不以此为限,根据其他的实施例,主动元件T也可是顶部栅极型薄膜晶体管(top-gate TFT)或其它适当型式的薄膜晶体管。In this embodiment, the pixel array substrate 10 further includes a fourth insulating layer 110 disposed between the gate G and the semiconductor pattern CH. In this embodiment, the semiconductor pattern CH may be selectively disposed on the gate G, thereby forming a bottom-gate TFT. However, the present invention is not limited thereto. According to other embodiments, the active element T may also be a top-gate TFT or other suitable types of TFTs.
请参照图1及图2,在本实施例中,多条扫描线SL1、SL2、SL3与栅极G的材料可相同;也就是说,多条扫描线SL1、SL2、SL3与栅极G可由相同膜层形成。另外,在本实施例中,数据线DL、源极S与漏极D的材料可相同;也就是说,数据线DL、源极S与漏极D可由相同膜层形成。在本实施例中,基于导电性的考量,数据线DL、扫描线SL1、SL2、SL3、栅极G、源极S及漏极D的材料一般是使用金属材料。然而,本发明不以此为限,根据其他的实施例,数据线DL、扫描线SL1、SL2、SL3、栅极 G、源极S及漏极D也可使用其他导电材料,例如:合金、金属材料的氮化物、金属材料的氧化物、金属材料的氮氧化物、或其他合适的材料、或是金属材料与其他导电材料的堆叠层。Please refer to FIG. 1 and FIG. 2. In this embodiment, the materials of the multiple scan lines SL1, SL2, SL3 and the gate G can be the same; that is, the multiple scan lines SL1, SL2, SL3 and the gate G can be made of The same film layer is formed. In addition, in this embodiment, the materials of the data line DL, the source S, and the drain D may be the same; that is, the data line DL, the source S, and the drain D may be formed of the same film layer. In this embodiment, based on the consideration of conductivity, the materials of the data lines DL, the scan lines SL1 , SL2 , SL3 , the gate G, the source S and the drain D are generally metal materials. However, the present invention is not limited thereto. According to other embodiments, data lines DL, scan lines SL1, SL2, SL3, gate G, source S, and drain D may also use other conductive materials, such as: alloy, Nitride of metal material, oxide of metal material, oxynitride of metal material, or other suitable materials, or stacked layers of metal material and other conductive materials.
在本实施例中,像素阵列基板10还包括第一绝缘层120。第一绝缘层 120覆盖主动元件T、多条数据线DL及部分的第四绝缘层110,且具有位于显示区AA的第一接触窗120a。在本实施例中,第一接触窗120a贯穿第一绝缘层120,以暴露出漏极D的部分表面。像素电极130设置于第一绝缘层120上,且填入第一绝缘层120的第一接触窗120a以和主动元件T 的漏极D电性连接。In this embodiment, the pixel array substrate 10 further includes a first insulating layer 120 . The first insulating layer 120 covers the active device T, a plurality of data lines DL and part of the fourth insulating layer 110, and has a first contact window 120a located in the display area AA. In this embodiment, the first contact window 120 a penetrates through the first insulating layer 120 to expose part of the surface of the drain D. Referring to FIG. The pixel electrode 130 is disposed on the first insulating layer 120 and fills the first contact window 120a of the first insulating layer 120 to be electrically connected to the drain D of the active device T. Referring to FIG.
请参照图1,在本实施例中,像素阵列基板10还包括第二绝缘层140。第二绝缘层140设置于第一绝缘层120上,且覆盖像素电极130及部分的第一绝缘层120。触控走线TL设置于第二绝缘层140上。第二绝缘层140 设置于触控走线TL所属的膜层与像素电极130所属的膜层之间。特别是,在本实施例中,触控走线TL与扫描线SL1之间夹设有第一绝缘层120及第二绝缘层140,使触控走线TL与扫描线SL1在垂直投影方向D3上的距离L1较远,因此能降低触控走线TL与扫描线SL1所形成的杂散电容值 (Parasitic capacitance)。类似地,由于触控走线TL与数据线DL之间夹设有第一绝缘层120及第二绝缘层140而使触控走线TL与数据线DL在垂直投影方向D3上的距离(未标示)较远,因此能降低触控走线TL与数据线 DL所形成的杂散电容值。Referring to FIG. 1 , in this embodiment, the pixel array substrate 10 further includes a second insulating layer 140 . The second insulating layer 140 is disposed on the first insulating layer 120 and covers the pixel electrode 130 and part of the first insulating layer 120 . The touch trace TL is disposed on the second insulating layer 140 . The second insulating layer 140 is disposed between the film layer to which the touch trace TL belongs and the film layer to which the pixel electrode 130 belongs. In particular, in this embodiment, the first insulating layer 120 and the second insulating layer 140 are sandwiched between the touch trace TL and the scan line SL1 , so that the touch trace TL and the scan line SL1 are aligned in the vertical projection direction D3 Therefore, the parasitic capacitance formed by the touch trace TL and the scan line SL1 can be reduced. Similarly, since the first insulating layer 120 and the second insulating layer 140 are interposed between the touch trace TL and the data line DL, the distance between the touch trace TL and the data line DL in the vertical projection direction D3 (not shown in FIG. mark) is far away, so the stray capacitance formed by the touch trace TL and the data line DL can be reduced.
值得一提的是,本实施例的像素阵列基板10采用三闸型(Tri-gate) 架构,因此扫描线SL1、SL2、SL3具有高电位而使主动元件T开启的时间较短,亦即,充电时间较短。三闸型(Tri-gate)架构的相关技术可参考美国专利申请案公开号US20100289792A1的内容,其内容并入本发明参考,但不用以限制本发明。通过上述设置方式,触控走线TL与扫描线SL1 所形成的杂散电容值及触控走线TL与数据线DL所形成的杂散电容值能降低,因此像素阵列基板10能在采用三闸型(Tri-gate)架构的前提下,具有稳定的传递讯号。此外,第i级充电时间ti时数据线DL的充电电压Vti 满足以下公式:Vti=V×{1-exp[-ti/(RC)]},其中V为数据线DL的原始充电电压,R为充电线路阻值,C为共用电极160与像素电极130所形成的储存电容值,由以上公式可知,储存电容值C反比于充电率Vti/V,本实施例因具有较小的共用电极160与像素电极130所形成的储存电容值,故具有较大的充电率(Charging ratio)。另一方面,根据耗电率公式,耗电量P=F×Cdata*V2,其中F为时脉频率,V为供应电压,Cdata为数据线 DL与扫描线SL1、SL2、SL3和触控走线TL之间的寄生电容,由以上公式可知,寄生电容Cdata正比于耗电量P,本实施例因具有较小的数据线 DL与触控走线TL所形成的电容值,故具有较小的耗电量。由此,采用像素阵列基板10的显示面板在成本低的前提仍具有良好的显示品质。It is worth mentioning that the pixel array substrate 10 of this embodiment adopts a tri-gate structure, so the scanning lines SL1, SL2, and SL3 have a high potential and the active element T is turned on for a short time, that is, The charging time is shorter. For related technologies of the Tri-gate architecture, reference may be made to the content of US Patent Application Publication No. US20100289792A1, the content of which is incorporated by reference in the present invention, but is not intended to limit the present invention. Through the above arrangement, the stray capacitance formed by the touch trace TL and the scan line SL1 and the stray capacitance formed by the touch trace TL and the data line DL can be reduced, so the pixel array substrate 10 can be used in three Under the premise of Tri-gate structure, it has stable signal transmission. In addition, the charging voltage Vti of the data line DL at the charging time ti of the i-th stage satisfies the following formula: Vti=V×{1-exp[-ti/(RC)]}, where V is the original charging voltage of the data line DL, R is the resistance value of the charging circuit, and C is the storage capacitance value formed by the common electrode 160 and the pixel electrode 130. It can be known from the above formula that the storage capacitance value C is inversely proportional to the charging rate Vti/V. This embodiment has a smaller common electrode 160 The storage capacitor formed with the pixel electrode 130 has a relatively large charging ratio. On the other hand, according to the power consumption rate formula, power consumption P=F×Cdata*V 2 , where F is the clock frequency, V is the supply voltage, and Cdata is the data line DL, scan lines SL1, SL2, SL3 and touch As for the parasitic capacitance between the traces TL, it can be seen from the above formula that the parasitic capacitance Cdata is proportional to the power consumption P. This embodiment has a relatively small capacitance formed by the data line DL and the touch trace TL, so it has a relatively small capacitance. Small power consumption. Therefore, the display panel using the pixel array substrate 10 still has good display quality on the premise of low cost.
请参照图1,像素阵列基板10还包括第三绝缘层150。在本实施例中,第三绝缘层150设置于第二绝缘层140上,且覆盖部分的触控走线TL及部分的第二绝缘层140。更具体的是,第三绝缘层150具有第三接触窗150a,第三接触窗150a贯穿第三绝缘层150,以暴露出触控走线TL的部分表面。在本实施例中,第一绝缘层120、第二绝缘层140及第三绝缘层150在垂直投影方向D3上分别具有厚度H1、H2及H3,其中第一绝缘层120的厚度H1大于第二绝缘层140的厚度H2及第三绝缘层150的厚度H3,但本发明不以此为限。举例而言,在本实施例中,第一绝缘层120的厚度H1 可为4000埃至10000埃,第二绝缘层140的厚度H2可为1000埃6000埃,第三绝缘层150的厚度H3可为1000埃至6000埃,但本发明不以此为限。在本实施例中,第一绝缘层120、第二绝缘层140、第三绝缘层150及第四绝缘层110的材质可包括无机材料(例如:氧化硅、氮化硅、氮氧化硅、其它合适的材料、或上述至少两种材料的堆叠层)、有机材料、或其它合适的材料、或上述的组合。Referring to FIG. 1 , the pixel array substrate 10 further includes a third insulating layer 150 . In this embodiment, the third insulating layer 150 is disposed on the second insulating layer 140 and covers part of the touch trace TL and part of the second insulating layer 140 . More specifically, the third insulating layer 150 has a third contact window 150a, and the third contact window 150a penetrates through the third insulating layer 150 to expose part of the surface of the touch trace TL. In this embodiment, the first insulating layer 120, the second insulating layer 140, and the third insulating layer 150 have thicknesses H1, H2, and H3 respectively in the vertical projection direction D3, wherein the thickness H1 of the first insulating layer 120 is greater than that of the second insulating layer 120. The thickness H2 of the insulating layer 140 and the thickness H3 of the third insulating layer 150 are not limited thereto. For example, in this embodiment, the thickness H1 of the first insulating layer 120 may be 4000 angstroms to 10000 angstroms, the thickness H2 of the second insulating layer 140 may be 1000 angstroms to 6000 angstroms, and the thickness H3 of the third insulating layer 150 may be 1000 angstroms to 6000 angstroms, but the present invention is not limited thereto. In this embodiment, the material of the first insulating layer 120, the second insulating layer 140, the third insulating layer 150 and the fourth insulating layer 110 may include inorganic materials (for example: silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or stacked layers of at least two of the above materials), organic materials, or other suitable materials, or a combination of the above.
在本实施例中,共用电极160设置于第三绝缘层150上,且填入第三绝缘层150的第三接触窗150a以和触控走线TL电性连接。也就是说,第三绝缘层150设置于共用电极160与触控走线TL之间。举例而言,在本实施例中,像素电极130及共用电极160可均为穿透式电极,而穿透式电极的材质包括金属氧化物,例如是铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、或其它合适的氧化物、或者是上述至少两者的堆叠层。然而,本发明不以此为限,在另一个实施例中,共用电极160可为反射式电极,而像素电极130可为穿透式电极,其中反射式电极的材质包括具有高反射率的金属材料。In this embodiment, the common electrode 160 is disposed on the third insulating layer 150 and fills in the third contact window 150 a of the third insulating layer 150 to be electrically connected to the touch trace TL. That is to say, the third insulating layer 150 is disposed between the common electrode 160 and the touch trace TL. For example, in this embodiment, the pixel electrode 130 and the common electrode 160 can both be penetrating electrodes, and the material of the penetrating electrodes includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum Tin oxide, aluminum zinc oxide, or other suitable oxides, or a stacked layer of at least two of the above. However, the present invention is not limited thereto. In another embodiment, the common electrode 160 can be a reflective electrode, and the pixel electrode 130 can be a transmissive electrode, wherein the material of the reflective electrode includes metal with high reflectivity Material.
值得一提的是,在本实施例中,由于共用电极160与像素电极130之间夹设有第二绝缘层140及第三绝缘层150而使得共用电极160与像素电极130在垂直投影方向D3上的距离L2较远,因此能降低共用电极160与像素电极130所形成的储存电容值(Storagecapacitance),距离L2举例系为2000埃至12000埃。本实施例的像素阵列基板10采用三闸型(Tri-gate) 架构,因此扫描线SL1、SL2、SL3具有高电位而能使主动元件T开启的时间较短,亦即,充电时间较短。然而,通过上述设置方式,共用电极160 与像素电极130所形成的储存电容值能降低,因此像素阵列基板10能在采用三闸型(Tri-gate)架构的前提下,具有足够的充电率(Charging ratio),以使采用像素阵列基板10的显示面板兼俱低成本的优势及良好的显示品质。It is worth mentioning that, in this embodiment, since the second insulating layer 140 and the third insulating layer 150 are interposed between the common electrode 160 and the pixel electrode 130, the common electrode 160 and the pixel electrode 130 are aligned vertically in the projection direction D3. The distance L2 above is relatively long, so the storage capacitance formed by the common electrode 160 and the pixel electrode 130 can be reduced. The distance L2 is, for example, 2000 angstroms to 12000 angstroms. The pixel array substrate 10 of this embodiment adopts a tri-gate structure, so the scan lines SL1 , SL2 , SL3 have high potentials to enable the active element T to be turned on for a short time, that is, the charging time is short. However, through the above arrangement, the storage capacitance formed by the common electrode 160 and the pixel electrode 130 can be reduced, so the pixel array substrate 10 can have a sufficient charging rate ( Charging ratio), so that the display panel using the pixel array substrate 10 has the advantages of low cost and good display quality.
请参照图1及图2,在本实施例中,共用电极160具有与像素电极130 重叠的多个分支161。请参照图2,在本实施例中,多个分支161包括多个第一直线段161a、多个第二直线段161b及多个弯曲段161c,其中第一直线段161a的延伸方向与第二直线段161b的延伸方向不同,弯曲段161c连接于第一直线段161a与第二直线段161b之间。在本实施例中,多个分支161还可进一步包括多个弯曲段161d、161e,其中第一直线段161a连接于弯曲段161c与弯曲段161d之间,第二直线段161b连接于弯曲段161c与弯曲段161e之间。Referring to FIG. 1 and FIG. 2 , in this embodiment, the common electrode 160 has a plurality of branches 161 overlapping with the pixel electrode 130 . Referring to Fig. 2, in this embodiment, a plurality of branches 161 includes a plurality of first straight segments 161a, a plurality of second straight segments 161b and a plurality of curved segments 161c, wherein the extension direction of the first straight segments 161a is the same as that of the second The extension direction of the straight line segment 161b is different, and the curved segment 161c is connected between the first straight line segment 161a and the second straight line segment 161b. In this embodiment, the plurality of branches 161 may further include a plurality of curved sections 161d, 161e, wherein the first straight section 161a is connected between the curved section 161c and the curved section 161d, and the second straight section 161b is connected to the curved section 161c and the curved section 161e.
在本实施例中,共用电极160的多个弯曲段161c与触控走线TL重叠。也就是说,触控走线TL设置于远离数据线DL处,由于触控走线TL与数据线DL在方向D2上的距离L3远,因此触控走线TL与数据线DL所形成的杂散电容值低,进而有助于提供稳定的讯号。此外,若将像素阵列基板10应用于液晶显示面板,延伸方向不同的第一直线段161a与第二直线段161b可定义多个液晶配向区,弯曲段161c的弯折点设置于所述多个液晶配向区之间的不连续线(Disclination line)上,触控走线TL重叠于无法提供亮度贡献的不连续线上,因此,在令触控走线TL与弯曲段161c重叠以降低杂散电容值的同时,触控走线TL的设置并不会过度影响液晶显示面板的穿透率。然而,本发明不以此为限,在另一个实施例中,触控走线 TL也可设置远离数据线DL的其它适当处。In this embodiment, the plurality of bent sections 161c of the common electrode 160 overlap with the touch trace TL. That is to say, the touch trace TL is arranged away from the data line DL. Since the distance L3 between the touch trace TL and the data line DL in the direction D2 is far, the noise formed by the touch trace TL and the data line DL The low capacitance value helps to provide a stable signal. In addition, if the pixel array substrate 10 is applied to a liquid crystal display panel, the first straight line segment 161a and the second straight line segment 161b extending in different directions can define a plurality of liquid crystal alignment regions, and the bending point of the curved segment 161c is set at the plurality of liquid crystal alignment regions. On the discontinuation line (Disclination line) between the liquid crystal alignment regions, the touch trace TL overlaps the discontinuation line that cannot contribute to the brightness. At the same time, the setting of the touch trace TL will not excessively affect the transmittance of the liquid crystal display panel. However, the present invention is not limited thereto, and in another embodiment, the touch trace TL can also be disposed at other suitable places away from the data line DL.
请参照图1,在本实施例中,像素阵列基板10还包括周边走线PL、第一转接图案131及第二转接图案162。周边走线PL设置于基板100的周边区PA。在本实施例中,周边走线PL与主动元件T的栅极G、扫描线SL1、 SL2、SL3可由相同膜层所形成,且周边走线PL与主动元件T的栅极G及扫描线SL1、SL2、SL3的材质可相同,但本发明不以此为限。周边走线 PL可具有参考电位。在本实施例中,参考电位例如是接地电位。然而,本发明不以此为限,在其它实施例中,参考电位也可以是固定电位或其它适当电位。Please refer to FIG. 1 , in the present embodiment, the pixel array substrate 10 further includes peripheral traces PL, a first transfer pattern 131 and a second transfer pattern 162 . The peripheral traces PL are disposed in the peripheral area PA of the substrate 100 . In this embodiment, the peripheral wiring PL and the gate G of the active device T, the scanning lines SL1, SL2, and SL3 can be formed of the same film layer, and the peripheral wiring PL and the gate G of the active device T and the scanning line SL1 The materials of , SL2 and SL3 can be the same, but the present invention is not limited thereto. The peripheral trace PL may have a reference potential. In this embodiment, the reference potential is, for example, the ground potential. However, the present invention is not limited thereto, and in other embodiments, the reference potential may also be a fixed potential or other appropriate potentials.
在本实施例中,第一绝缘层120设置于周边走线PL上且具有与周边走线PL重叠的第一接触窗120b。类似地,第四绝缘层110也设置于周边走线PL上且具有与周边走线PL重叠的第四接触窗110b,其中第一接触窗 120b与第四接触窗110b相通。特别是,在本实施例中,位于周边区PA的第一接触窗120b与第四接触窗110b可切齐,也就是说,第一接触窗120b 与第四接触窗110b可利用同一遮罩且于同一蚀刻制程中同时形成,但本发明不以此为限。In this embodiment, the first insulating layer 120 is disposed on the peripheral wiring PL and has a first contact window 120b overlapping with the peripheral wiring PL. Similarly, the fourth insulating layer 110 is also disposed on the peripheral wiring PL and has a fourth contact window 110b overlapping with the peripheral wiring PL, wherein the first contact window 120b communicates with the fourth contact window 110b. Especially, in this embodiment, the first contact window 120b and the fourth contact window 110b located in the peripheral area PA can be aligned, that is, the first contact window 120b and the fourth contact window 110b can use the same mask and formed simultaneously in the same etching process, but the invention is not limited thereto.
在本实施例中,第一转接图案131设置在位于周边区PA的第一绝缘层120上且通过第一接触窗120b及第四接触窗110b与周边走线PL电性连接。举例而言,在本实施例中,第一转接图案131与像素电极130可由相同膜层所形成,且第一转接图案131与像素电极130的材质相同,但本发明不以此为限。In this embodiment, the first transfer pattern 131 is disposed on the first insulating layer 120 located in the peripheral area PA and is electrically connected to the peripheral wiring PL through the first contact window 120 b and the fourth contact window 110 b. For example, in this embodiment, the first transfer pattern 131 and the pixel electrode 130 can be formed of the same film layer, and the material of the first transfer pattern 131 and the pixel electrode 130 is the same, but the present invention is not limited thereto .
在本实施例中,第二绝缘层140具有位于周边区PA的第二接触窗 140b,第三绝缘层150具有位于周边区PA的第三接触窗150b,第二绝缘层140与第三绝缘层150分别具有彼此相通的第二接触窗140b与第三接触窗150b,以暴露出第一转接图案131的部分表面。第二转接图案162设置在位于周边区PA的第三绝缘层150上,且通过第二接触窗140b与第三接触窗150b与第一转接图案131电性连接。在本实施例中,共用电极160 可通过第一转接图案131及第二转接图案162电性连接至周边走线PL。在本实施例中,第二接触窗140b与第三接触窗150b切齐;也就是说,第二接触窗140b与第三接触窗150b可利用同一遮罩且于同一蚀刻制程中同时形成,但本发明不以此为限。在本实施例中,第二转接图案162与共用电极160可由相同膜层所形成,且第二转接图案162与共用电极160的材质相同,但本发明不以此为限。In this embodiment, the second insulating layer 140 has a second contact window 140b located in the peripheral area PA, the third insulating layer 150 has a third contact window 150b located in the peripheral area PA, the second insulating layer 140 and the third insulating layer 150 respectively have a second contact hole 140 b and a third contact hole 150 b communicating with each other to expose part of the surface of the first transfer pattern 131 . The second transfer pattern 162 is disposed on the third insulating layer 150 located in the peripheral area PA, and is electrically connected to the first transfer pattern 131 through the second contact window 140 b and the third contact window 150 b. In this embodiment, the common electrode 160 can be electrically connected to the peripheral trace PL through the first transfer pattern 131 and the second transfer pattern 162 . In this embodiment, the second contact window 140b is aligned with the third contact window 150b; that is, the second contact window 140b and the third contact window 150b can be formed simultaneously using the same mask and in the same etching process, but The present invention is not limited thereto. In this embodiment, the second transfer pattern 162 and the common electrode 160 can be formed of the same film layer, and the material of the second transfer pattern 162 and the common electrode 160 is the same, but the present invention is not limited thereto.
综上所述,本发明的实施例的像素阵列基板的共用电极与像素电极之间设置有第二绝缘层与第三绝缘层,以增加共用电极与像素电极的距离。共用电极与像素电极的距离增加时,像素电极与共用电极之间的储存电容值能降低,进而提升充电率。由此,能实现低成本及高性能的像素阵列基板。To sum up, the second insulating layer and the third insulating layer are disposed between the common electrode and the pixel electrode of the pixel array substrate in the embodiment of the present invention, so as to increase the distance between the common electrode and the pixel electrode. When the distance between the common electrode and the pixel electrode increases, the storage capacitance between the pixel electrode and the common electrode can be reduced, thereby increasing the charging rate. Thus, a low-cost and high-performance pixel array substrate can be realized.
虽然本发明已以实施例披露如上,然其并非用以限定本发明,任何所属技术领域中的普通技术人员,在不脱离本发明的精神和范围内的情况下,应当可做出某些更改与润饰,故本发明的保护范围当视随附的权利要求书所界定者为准。Although the present invention has been disclosed above with embodiments, it is not intended to limit the present invention, and any ordinary skilled person in the technical field should be able to make some changes without departing from the spirit and scope of the present invention and retouching, so the scope of protection of the present invention should be defined by the appended claims.
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