CN108872151A - It is a kind of based on T shape to and nano wire pair optical sensor - Google Patents
It is a kind of based on T shape to and nano wire pair optical sensor Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及传感器领域,具体涉及一种基于T形对和纳米线对的光学传感器。The invention relates to the field of sensors, in particular to an optical sensor based on a T-shaped pair and a nanowire pair.
背景技术Background technique
传感器在微型化、自动化、选择性、稳定性、灵敏性、响应时间和使用寿命等方面的要求越来越高,新型传感材料的开发应用越来越受到重视。采用新材料制作新型传感器已成为研究的重要方向之一,以纳米线作传感器敏感材料的研究尤其引人注目。这主要在于一维纳米材料有巨大的比表面积和很高的表面活性,所以对周围环境尤其敏感。Sensors have higher and higher requirements in terms of miniaturization, automation, selectivity, stability, sensitivity, response time and service life, and the development and application of new sensing materials have been paid more and more attention. Using new materials to make new sensors has become one of the important directions of research, and the research on using nanowires as sensor sensitive materials is particularly attractive. This is mainly due to the huge specific surface area and high surface activity of one-dimensional nanomaterials, so they are particularly sensitive to the surrounding environment.
2011年Verellen N 等人在《Plasmon Line Shaping Using Nanocrosses forHigh Sensitivity Localized Surface Plasmon Resonance Sensing》中提出了一种基于X型和纳米线结合的超材料传感器,该传感器的左侧是X型,右侧是纳米线,它们的材料都是由金组成的,由从下到上依次为介质、金、基底组成的三层结构,基底是玻璃材料。该结构中X型结构具有角度控制的特点,但是上述结构在制备过程中比较困难,制备工艺要求较高,而且该结构的影响,该传感器的灵敏度不高,有时无法满足客户需要的要求。In 2011, Verellen N et al. proposed a metamaterial sensor based on the combination of X-type and nanowires in "Plasmon Line Shaping Using Nanocrosses for High Sensitivity Localized Surface Plasmon Resonance Sensing". The left side of the sensor is X-type, and the right side is Nanowires, their materials are all composed of gold, a three-layer structure consisting of medium, gold, and substrate from bottom to top, and the substrate is glass material. In this structure, the X-shaped structure has the characteristics of angle control, but the above-mentioned structure is difficult in the preparation process, and the preparation process requires high requirements. Moreover, due to the influence of this structure, the sensitivity of the sensor is not high, and sometimes it cannot meet the requirements of customers.
发明内容Contents of the invention
本发明的目的是提供一种结构简单、易于加工且极大地提高灵敏度的基于T形对和纳米线对的光学传感器。The object of the present invention is to provide an optical sensor based on T-shaped pair and nanowire pair with simple structure, easy processing and greatly improved sensitivity.
为实现上述目的,本发明的一种基于T形对和纳米线对的光学传感器采用如下技术方案:一种基于T形对和纳米线对的光学传感器,包括由上至下依次设置的电介质层、金属纳米结构和基底,金属纳米结构为二聚体结构,金属纳米结构包括设置于基底的上表面上的线型金属纳米对,线型金属纳米对包括平行间隔设置的沿纵向延伸的线型金属纳米线,金属纳米结构还包括于线型金属纳米线之间相对设置于基底的上表面上的T型金属纳米对,T型金属纳米对包括纵边相对间隔设置、横边平行设置的T型金属纳米线,各所述T型金属纳米线的横边的两端与相应的线型金属纳米线之间的距离和两个T型金属纳米线各自的纵边之间的距离相等,所述线型金属纳米线的长度与T型金属纳米线的横边的长度相等,T型金属纳米线的纵边的宽度和横边的宽度以及线型金属纳米线的宽度相等,T型金属纳米线的高度与线型金属纳米线的高度相等。To achieve the above object, an optical sensor based on a T-shaped pair and a nanowire pair of the present invention adopts the following technical scheme: an optical sensor based on a T-shaped pair and a nanowire pair, including dielectric layers arranged in sequence from top to bottom , a metal nanostructure and a substrate, the metal nanostructure is a dimer structure, the metal nanostructure includes linear metal nano-pairs arranged on the upper surface of the substrate, and the linear metal nano-pairs include parallel and spaced linear metal nano-pairs extending longitudinally Metal nanowires, metal nanostructures also include T-shaped metal nano-pairs that are relatively arranged on the upper surface of the substrate between the linear metal nano-wires. type metal nanowires, the distance between the two ends of the transverse sides of each of the T-type metal nanowires and the corresponding linear metal nanowires is equal to the distance between the respective longitudinal sides of the two T-type metal nanowires, so The length of the linear metal nanowire is equal to the length of the transverse side of the T-shaped metal nanowire, the width of the longitudinal side of the T-shaped metal nanowire is equal to the width of the transverse side and the width of the linear metal nanowire, and the T-shaped metal nanowire The height of the wire is equal to the height of the linear metal nanowire.
所述横边的两端与相应的线型金属纳米线的距离为10-60nm。The distance between the two ends of the transverse side and the corresponding linear metal nanowires is 10-60nm.
所述横边的两端与相应的线型金属纳米线的距离为40nm。The distance between the two ends of the transverse side and the corresponding linear metal nanowires is 40nm.
所述线型金属纳米线的长度为80-150nm。The length of the linear metal nanowire is 80-150nm.
所述线型金属纳米线的长度为100nm。The length of the linear metal nanowire is 100nm.
所述T型金属纳米线的纵边的长度为30nm-90nm。The length of the longitudinal side of the T-shaped metal nanowire is 30nm-90nm.
所述线型金属纳米线的宽度为10-50nm。The width of the linear metal nanowire is 10-50nm.
所述线型金属纳米线的宽度为20nm。The width of the linear metal nanowire is 20nm.
所述T型金属纳米线的高度为20-50nm。The height of the T-shaped metal nanowire is 20-50nm.
所述T型金属纳米线的高度为30nm。The height of the T-shaped metal nanowire is 30nm.
本发明的有益效果:金属纳米结构为二聚体结构,包括线型金属纳米对和位于线型金属纳米对之间的T型金属纳米对,各所述T型金属纳米线的横边的两端与相应的线型金属纳米线之间的距离与两个T型金属纳米线各自的纵边之间的距离相等,所述线型金属纳米线的长度与T型金属纳米线的横边的长度相等,T型金属纳米线的纵边的宽度和横边的宽度以及线型金属纳米线的宽度相等,T型金属纳米线的高度与线型金属纳米线的高度相等。该结构简单,制备工艺要求难度大大降低,有很好的传感效果,而且该结构的光学传感器可以容易提高传感器的灵敏度。光可以沿任意方向入射,不存在因为入射角度而带来灵敏度的不同。这种光学传感器只对物体的折射率比较敏感,与光的强度无关,无论光从哪个方向入射,只要照射到这种结构上就可以检测到并用波长的变化表示出来。Beneficial effects of the present invention: the metal nanostructure is a dimer structure, including a linear metal nano-pair and a T-shaped metal nano-pair located between the linear metal nano-pair, and the two lateral sides of each T-shaped metal nanowire The distance between the end and the corresponding linear metal nanowire is equal to the distance between the respective longitudinal sides of the two T-shaped metal nanowires, and the length of the linear metal nanowire is equal to that of the transverse side of the T-shaped metal nanowire. The lengths are equal, the width of the longitudinal side of the T-shaped metal nanowire is equal to the width of the transverse side and the width of the linear metal nanowire, and the height of the T-shaped metal nanowire is equal to the height of the linear metal nanowire. The structure is simple, the difficulty of the preparation process is greatly reduced, and the sensing effect is good, and the optical sensor with the structure can easily improve the sensitivity of the sensor. Light can be incident in any direction, and there is no difference in sensitivity due to the incident angle. This optical sensor is only sensitive to the refractive index of the object and has nothing to do with the intensity of light. No matter from which direction the light is incident, as long as it is irradiated on this structure, it can be detected and expressed as a change in wavelength.
附图说明Description of drawings
图1是本发明的一种基于T形对和纳米线对的光学传感器的一种实施例的结构示意图;Fig. 1 is a kind of structural schematic diagram of an embodiment of the optical sensor based on T-shaped pair and nanowire pair of the present invention;
图2是图1的俯视图;Fig. 2 is the top view of Fig. 1;
图3是T型金属纳米对和线型金属纳米对的位置结构示意图;3 is a schematic diagram of the position structure of a T-type metal nano-pair and a linear metal nano-pair;
图4是本实施例中理论计算所得到的光学传感器的消光谱曲线图;Fig. 4 is the extinction curve figure of the optical sensor obtained by theoretical calculation in the present embodiment;
图5是本实施例中理论计算所得到的光学传感器的入射波长与折射率关系图;Fig. 5 is the relation figure of incident wavelength and refractive index of the optical sensor obtained by theoretical calculation in the present embodiment;
图6是本实施例中理论计算所得到的光学传感器的品质因数的关系图,其中P1是短波波长随折射率的变化,P2是长波波长随折射率的变化,它们的关系是FOM = m(nm RIU-1)/FWHM (nm),m是一个单元内折射率改变时波长的变化,FWHM是半波宽。Fig. 6 is the relationship figure of the figure of merit of the optical sensor that theoretical calculation obtains in the present embodiment, wherein P 1 is the variation of short-wavelength wavelength with refractive index, P 2 is the variation of long-wavelength wavelength with refractive index, their relation is FOM= m(nm RIU -1 )/FWHM (nm), m is the wavelength change when the refractive index changes in a unit, and FWHM is the half-wave width.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.
本发明的一种基于T形对和纳米线对的光学传感器的实施例:如图1-图6所示,包括由上至下依次设置的电介质层1、金属纳米结构和基底2,基底2为石英板,金属纳米结构为二聚体结构并嵌入基底2上。金属纳米结构包括设置于基底2的上表面上的具有平行间隔设置的线型金属纳米线5的线型金属纳米对3,线型金属纳米线5的长度沿纵向延伸。金属纳米结构还包括于基底2的上表面上线型金属纳米线5之间相对设置的T型金属纳米对4,T型金属纳米对4包括纵边8相对间隔设置、横边7平行设置的T型金属纳米线6。其中,各T型金属纳米线6的横边7的两端与相应的线型金属纳米线5之间的距离D和两个T型金属纳米线6各自的纵边8之间的距离D相等,线型金属纳米线5的长度L与T型金属纳米线6的横边7的长度L相等,T型金属纳米线6的纵边8的宽度W和横边7的宽度W以及线型金属纳米线5的宽度W相等,T型金属纳米线6的高度H与线型金属纳米线5的高度H相等。光可以沿任意方向入射,不存在因为入射角度而带来灵敏度的不同。这种光学传感器只对物体的折射率比较敏感,与光的强度无关,无论光从哪个方向入射,只要照射到这种结构上就可以检测到并用波长的变化表示出来。线型金属纳米对3和T型金属纳米对4均采用金属银制成,电介质层1为空气。An embodiment of an optical sensor based on a T-shaped pair and a nanowire pair of the present invention: as shown in Figures 1-6, it includes a dielectric layer 1, a metal nanostructure and a substrate 2 arranged in sequence from top to bottom, and the substrate 2 It is a quartz plate, and the metal nanostructure is a dimer structure and embedded on the substrate 2 . The metal nanostructure includes linear metal nanopairs 3 with parallel and spaced linear metal nanowires 5 arranged on the upper surface of the substrate 2 , and the length of the linear metal nanowires 5 extends longitudinally. The metal nanostructure also includes T-shaped metal nano-pairs 4 oppositely arranged between the linear metal nanowires 5 on the upper surface of the substrate 2, and the T-shaped metal nano-pairs 4 include T-shaped metal nano-pairs with vertical sides 8 arranged at intervals and horizontal sides 7 arranged in parallel. type metal nanowires6. Wherein, the distance D between the two ends of the transverse side 7 of each T-shaped metal nanowire 6 and the corresponding linear metal nanowire 5 is equal to the distance D between the respective longitudinal sides 8 of the two T-shaped metal nanowires 6 , the length L of the linear metal nanowire 5 is equal to the length L of the lateral side 7 of the T-shaped metal nanowire 6, the width W of the longitudinal side 8 of the T-shaped metal nanowire 6 and the width W of the lateral side 7 and the linear metal nanowire The width W of the nanowires 5 is equal, and the height H of the T-shaped metal nanowires 6 is equal to the height H of the linear metal nanowires 5 . Light can be incident in any direction, and there is no difference in sensitivity due to the incident angle. This optical sensor is only sensitive to the refractive index of the object and has nothing to do with the intensity of light. No matter from which direction the light is incident, as long as it is irradiated on this structure, it can be detected and expressed as a change in wavelength. Both the linear metal nano-pair 3 and the T-shaped metal nano-pair 4 are made of metallic silver, and the dielectric layer 1 is air.
各T型金属纳米线6的横边7的两端与相应的线型金属纳米线5的距离D为40nm。线型金属纳米线5的长度为100nm。T型金属纳米线6的纵边8的长度S为40nm。T型金属纳米线6的纵边8的宽度为20nm。T型金属纳米线6的高度H为30nm。The distance D between the two ends of the transverse sides 7 of each T-shaped metal nanowire 6 and the corresponding linear metal nanowire 5 is 40 nm. The length of the linear metal nanowire 5 is 100 nm. The length S of the longitudinal side 8 of the T-shaped metal nanowire 6 is 40 nm. The width of the longitudinal side 8 of the T-shaped metal nanowire 6 is 20 nm. The height H of the T-shaped metal nanowire 6 is 30 nm.
金属纳米结构为二聚体结构,上述结构简单,制备工艺要求难度大大降低,有很好的传感效果,而且该结构的光学传感器可以容易提高传感器的灵敏度。该光学传感器的机理是通过调节T形金属纳米对的参数和线型金属纳米对的参数来促进各个金属纳米线之间的等离子体发生相互作用产生不同的光谱响应,实现传感效果。The metal nanostructure is a dimer structure, the above-mentioned structure is simple, the difficulty of preparation process requirements is greatly reduced, and it has a good sensing effect, and the optical sensor with this structure can easily improve the sensitivity of the sensor. The mechanism of the optical sensor is to promote the plasmon interaction between each metal nanowire to generate different spectral responses by adjusting the parameters of the T-shaped metal nano-pair and the parameters of the linear metal nano-pair to achieve the sensing effect.
上述基于T形对和纳米线对结构的光学传感器的制备过程包括以下步骤:The preparation process of the above-mentioned optical sensor based on the T-shaped pair and the nanowire pair structure includes the following steps:
步骤1. 清洗材质为石英的基底:先对基底进行表面处理,然后进行预烘烤去除由于表面处理而带来的水蒸气、化学药品。Step 1. Clean the substrate made of quartz: surface treatment is performed on the substrate first, and then pre-baked to remove water vapor and chemicals brought about by the surface treatment.
步骤2. 旋转涂胶:选用喷雾涂胶法,旋转涂胶要经过滴胶、低速旋转、高速旋转几个步骤。Step 2. Rotary gluing: use the spray gluing method, and the rotary gluing needs to go through several steps of glue dropping, low-speed rotation, and high-speed rotation.
步骤4. 曝光:在掩膜板的作用下对光刻胶进行曝光,制备T形对、纳米线对。Step 4. Exposure: Expose the photoresist under the action of a mask to prepare T-shaped pairs and nanowire pairs.
步骤5. 电子束蒸镀:利用电子束蒸发系统,将金属蒸镀到T形对、纳米线对的孔中。Step 5. Electron beam evaporation: use the electron beam evaporation system to evaporate the metal into the holes of the T-shaped pair and the nanowire pair.
步骤6. 显影:对曝光后的光刻胶用显影液进行腐蚀显影。Step 6. Development: corrode and develop the exposed photoresist with a developer.
步骤7. 清洗:洗去光刻胶就可以得到相应的结构。如图3所示。Step 7. Cleaning: The corresponding structure can be obtained by washing off the photoresist. As shown in Figure 3.
利用有限元电磁仿真软件Comsol Multiphysics的波动光学模块来模拟带传感器的传感特性。首先应在软件中构建一个结构模型然后再设置周期性边界条件,针对边界反射情况可以通过构建完美匹配层来消除影响,最后整个结构进行模拟。计算所得到的传感器的消光谱曲线图,如图4所示。计算所得到的传感器的入射波长与折射率关系图,如图5所示。计算所得到的传感器的品质因数的关系图如图6所示。The wave optics module of the finite element electromagnetic simulation software Comsol Multiphysics is used to simulate the sensing characteristics of the belt sensor. First, a structural model should be built in the software, and then periodic boundary conditions should be set. For boundary reflections, the influence can be eliminated by building a perfect matching layer, and finally the entire structure is simulated. The calculated extinction curve of the sensor is shown in Figure 4. The calculated relationship between the incident wavelength and the refractive index of the sensor is shown in Figure 5. The relationship diagram of the calculated quality factor of the sensor is shown in Fig. 6 .
在本发明的其他实施例中,线型金属纳米线的长度为80nm;线型金属纳米线的长度为150nm;T型金属纳米线的纵边的长度为30nm;T型金属纳米线的纵边的长度为90nm;T型金属纳米线的纵边的宽度为10nm;T型金属纳米线的纵边的宽度为50nm;T型金属纳米线的高度为20nm;T型金属纳米线的高度为50nm;横边的两端与相应的线型金属纳米线的距离为10nm;横边的两端与相应的线型金属纳米线的距离为60nm。In other embodiments of the present invention, the length of the linear metal nanowire is 80nm; the length of the linear metal nanowire is 150nm; the length of the longitudinal side of the T-shaped metal nanowire is 30nm; the length of the longitudinal side of the T-shaped metal nanowire The length of the T-type metal nanowire is 90nm; the width of the longitudinal side of the T-type metal nanowire is 10nm; the width of the longitudinal side of the T-type metal nanowire is 50nm; the height of the T-type metal nanowire is 20nm; the height of the T-type metal nanowire is 50nm ; The distance between the two ends of the horizontal side and the corresponding linear metal nanowire is 10nm; the distance between the two ends of the horizontal side and the corresponding linear metal nanowire is 60nm.
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CN118258789A (en) * | 2024-03-21 | 2024-06-28 | 南京航空航天大学 | Terahertz metamaterial sensor with multiple resonance peak high Q values |
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