CN108831379A - Pixel circuit and display panel - Google Patents
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
Description
技术领域technical field
本公开文件有关一种像素电路和显示面板,特别涉及一种利用回授方式补偿临界电压的像素电路和显示面板。The disclosure document relates to a pixel circuit and a display panel, and in particular to a pixel circuit and a display panel that use a feedback method to compensate a critical voltage.
背景技术Background technique
低温多晶硅薄膜晶体管(low temperature poly-silicon thin-filmtransistor)具有高载子迁移率与尺寸小的特点,适合应用于高分辨率、窄边框以及低耗电的显示面板。目前业界广泛使用准分子激光退火(excimer laser annealing)技术来形成低温多晶硅薄膜晶体管的多晶硅薄膜。然而,由于准分子激光每一发的扫描功率并不稳定,不同区域的多晶硅薄膜会具有晶粒尺寸与数量的差异。因此,于显示面板的不同区域中,低温多晶硅薄膜晶体管的特性便会不同。例如,不同区域的低温多晶硅薄膜晶体管会有着不同的临界电压(threshold voltage),这种现象称为临界电压变异。Low temperature poly-silicon thin-film transistor (low temperature poly-silicon thin-film transistor) has the characteristics of high carrier mobility and small size, and is suitable for display panels with high resolution, narrow frame and low power consumption. Excimer laser annealing (excimer laser annealing) technology is widely used in the industry at present to form polysilicon thin films of low temperature polysilicon thin film transistors. However, since the scanning power of each shot of the excimer laser is not stable, the polysilicon film in different regions will have differences in grain size and quantity. Therefore, in different regions of the display panel, the characteristics of the LTPS TFTs will be different. For example, low-temperature polysilicon thin film transistors in different regions have different threshold voltages, and this phenomenon is called threshold voltage variation.
传统的像素电路通过发光前的电路操作,来检测与补偿其驱动晶体管的临界电压变异。然而,这种补偿方式需要复杂的电路结构和较多的控制信号,还需要额外的操作阶段来产生补偿电压。因此,传统的像素电路无法满足现今显示器窄边框、高分辨率以及高PPI(pixels per inch)等诸多需求。The conventional pixel circuit detects and compensates the threshold voltage variation of its drive transistor through the circuit operation before emitting light. However, this compensation method requires a complex circuit structure and a large number of control signals, and additional operation stages are required to generate the compensation voltage. Therefore, the traditional pixel circuit cannot meet many requirements such as narrow bezel, high resolution and high PPI (pixels per inch) of today's displays.
有鉴于此,如何提供以少量控制信号即可操作,且无须额外操作阶段的简单像素电路,实为业界有待解决的问题。In view of this, how to provide a simple pixel circuit that can be operated with a small number of control signals and does not require additional operation stages is a problem to be solved in the industry.
发明内容Contents of the invention
本公开文件提供一种像素电路。像素电路包含驱动晶体管、第一开关、存储电容和发光单元。驱动晶体管包含第一端、第二端和控制端,其中驱动晶体管的第一端用于接收系统高电压,驱动晶体管的第二端耦接于第一节点,驱动晶体管的控制端耦接于第二节点。第一开关包含第一端、第二端和控制端,其中第一开关的第一端耦接于第一节点,第一开关的第二端耦接于第三节点,第一开关的控制端用于接收第一控制信号。存储电容包含第一端和第二端,其中存储电容的第一端耦接于第二节点,且用于接收数据电压,存储电容的第二端直接耦接于第三节点,且用于接收参考电压。发光单元包含阳极端和阴极端,其中阳极端耦接于第三节点,阴极端用于接收系统低电压。The disclosed document provides a pixel circuit. The pixel circuit includes a driving transistor, a first switch, a storage capacitor and a light emitting unit. The drive transistor includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the drive transistor is used to receive the system high voltage, the second terminal of the drive transistor is coupled to the first node, and the control terminal of the drive transistor is coupled to the second node. Two nodes. The first switch includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the first switch is coupled to the first node, the second terminal of the first switch is coupled to the third node, and the control terminal of the first switch Used to receive the first control signal. The storage capacitor includes a first end and a second end, wherein the first end of the storage capacitor is coupled to the second node for receiving the data voltage, and the second end of the storage capacitor is directly coupled to the third node for receiving reference voltage. The light emitting unit includes an anode terminal and a cathode terminal, wherein the anode terminal is coupled to the third node, and the cathode terminal is used for receiving the low voltage of the system.
本公开文件另提供一种显示面板。显示面板包含栅极驱动电路、源极驱动电路和多个像素电路。栅极驱动电路用于提供第一控制信号。源极驱动电路用于提供数据电压。多个像素电路耦接于栅极驱动电路和源极驱动电路。每个像素电路包含驱动晶体管、第一开关、存储电容和发光单元。驱动晶体管包含第一端、第二端和控制端,其中驱动晶体管的第一端用于接收系统高电压,驱动晶体管的第二端耦接于第一节点,驱动晶体管的控制端耦接于第二节点。第一开关包含第一端、第二端和控制端,其中第一开关的第一端耦接于第一节点,第一开关的第二端耦接于第三节点,第一开关的控制端用于接收第一控制信号。存储电容包含第一端和第二端,其中存储电容的第一端耦接于第二节点,且用于接收数据电压,存储电容的第二端直接耦接于第三节点,且用于接收参考电压。发光单元包含阳极端和阴极端,其中阳极端耦接于第三节点,阴极端用于接收系统低电压。The disclosure document further provides a display panel. The display panel includes a gate driving circuit, a source driving circuit and a plurality of pixel circuits. The gate driving circuit is used for providing the first control signal. The source driving circuit is used to provide data voltage. A plurality of pixel circuits are coupled to the gate driving circuit and the source driving circuit. Each pixel circuit includes a driving transistor, a first switch, a storage capacitor and a light emitting unit. The drive transistor includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the drive transistor is used to receive the system high voltage, the second terminal of the drive transistor is coupled to the first node, and the control terminal of the drive transistor is coupled to the second node. Two nodes. The first switch includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the first switch is coupled to the first node, the second terminal of the first switch is coupled to the third node, and the control terminal of the first switch Used to receive the first control signal. The storage capacitor includes a first end and a second end, wherein the first end of the storage capacitor is coupled to the second node for receiving the data voltage, and the second end of the storage capacitor is directly coupled to the third node for receiving reference voltage. The light emitting unit includes an anode terminal and a cathode terminal, wherein the anode terminal is coupled to the third node, and the cathode terminal is used for receiving the low voltage of the system.
上述的像素电路和显示面板具有架构简单、操作信号数量少以及操作阶段少等等优点。The above-mentioned pixel circuit and display panel have the advantages of simple structure, fewer operating signals, fewer operating stages, and the like.
附图说明Description of drawings
为让公开文件的上述和其他目的、特征、优点与实施例能更明显易懂,附图的说明如下:In order to make the above and other purposes, features, advantages and embodiments of the disclosed document more obvious and understandable, the description of the accompanying drawings is as follows:
图1为根据本公开文件一实施例的显示面板简化后的功能方框图。FIG. 1 is a simplified functional block diagram of a display panel according to an embodiment of the disclosure.
图2为根据本公开文件一实施例的图1的像素电路的电路示意图。FIG. 2 is a schematic circuit diagram of the pixel circuit in FIG. 1 according to an embodiment of the disclosure.
图3为依据本公开文件一实施例的图1的像素电路的运行时序图。FIG. 3 is an operation timing diagram of the pixel circuit in FIG. 1 according to an embodiment of the disclosure.
图4为图1的像素电路于写入阶段的等效电路驱动示意图。FIG. 4 is a driving schematic diagram of an equivalent circuit of the pixel circuit in FIG. 1 in a writing phase.
图5为图1的像素电路于发光阶段的等效电路驱动示意图。FIG. 5 is a driving schematic diagram of an equivalent circuit of the pixel circuit in FIG. 1 in a light emitting stage.
附图标记说明:Explanation of reference signs:
100:显示面板100: display panel
110:像素电路110: Pixel circuit
112:驱动晶体管112: drive transistor
114:写入电路114: write circuit
116:发光单元116: Lighting unit
120:源极驱动电路120: Source drive circuit
130:栅极驱动电路130: Gate drive circuit
N1~N3:第一节点~第三节点N1~N3: first node~third node
SW1~SW3:第一开关~第三开关SW1~SW3: the first switch~the third switch
Cs:存储电容Cs: storage capacitor
Idri:驱动电流Idri: drive current
CT1~CT2:第一控制信号~第二控制信号CT1~CT2: first control signal~second control signal
T1:写入阶段T1: Write phase
T2:发光阶段T2: Luminous stage
VDD:系统高电压VDD: system high voltage
VSS:系统低电压VSS: System Low Voltage
Vdata:数据电压Vdata: data voltage
Vref:参考电压Vref: reference voltage
V1~V3:第一节点电压~第三节点电压V1~V3: first node voltage to third node voltage
Va:阳极端电压Va: anode terminal voltage
具体实施方式Detailed ways
以下将配合相关附图来说明本公开文件的实施例。在附图中,相同的标号表示相同或类似的元件或方法流程。Embodiments of the disclosure will be described below with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar elements or method flows.
以下依本发明像素电路特举实施例配合附图作详细说明,但所提供的实施例并非用以限制本发明所涵盖的范围。The specific embodiments of the pixel circuit of the present invention will be described in detail below with reference to the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention.
图1为根据本公开文件一实施例的显示面板100简化后的功能方框图。显示面板100包含多个像素电路110、源极驱动电路120和栅极驱动电路130,且多个像素电路110耦接于源极驱动电路120和栅极驱动电路130。为使图面简洁而易于说明,显示面板100中的其他元件与连接关系并未示出于图1中。FIG. 1 is a simplified functional block diagram of a display panel 100 according to an embodiment of the disclosure. The display panel 100 includes a plurality of pixel circuits 110 , a source driving circuit 120 and a gate driving circuit 130 , and the plurality of pixel circuits 110 are coupled to the source driving circuit 120 and the gate driving circuit 130 . In order to make the drawing concise and easy to explain, other elements and connections in the display panel 100 are not shown in FIG. 1 .
每个像素电路110自源极驱动电路120接收数据电压Vdata,以及自栅极驱动电路130接收第一控制信号CT1和第二控制信号CT2,并依据数据电压Vdata、第一控制信号CT1和第二控制信号CT2进行运作。Each pixel circuit 110 receives the data voltage Vdata from the source driving circuit 120, and receives the first control signal CT1 and the second control signal CT2 from the gate driving circuit 130, and according to the data voltage Vdata, the first control signal CT1 and the second control signal CT1 The control signal CT2 operates.
图2为根据本公开文件一实施例的图1的像素电路110的电路示意图。像素电路110包含驱动晶体管112、写入电路114、第一开关SW1、存储电容Cs以及发光单元116。驱动晶体管112包含第一端、第二端和控制端,其中驱动晶体管112的第一端用于接收系统高电压VDD,驱动晶体管112的第二端耦接于第一节点N1,驱动晶体管112的控制端耦接于第二节点N2。FIG. 2 is a schematic circuit diagram of the pixel circuit 110 in FIG. 1 according to an embodiment of the disclosure. The pixel circuit 110 includes a driving transistor 112 , a writing circuit 114 , a first switch SW1 , a storage capacitor Cs and a light emitting unit 116 . The driving transistor 112 includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the driving transistor 112 is used to receive the system high voltage VDD, the second terminal of the driving transistor 112 is coupled to the first node N1, and the driving transistor 112 The control terminal is coupled to the second node N2.
第一开关SW1包含第一端、第二端和控制端,其中第一开关SW1的第一端耦接于第一节点N1,第一开关SW1的第二端耦接于第三节点N3,第一开关SW1的控制端用于自栅极驱动电路130接收第一控制信号CT1。The first switch SW1 includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the first switch SW1 is coupled to the first node N1, the second terminal of the first switch SW1 is coupled to the third node N3, and the second terminal of the first switch SW1 is coupled to the third node N3. A control terminal of a switch SW1 is used for receiving a first control signal CT1 from the gate driving circuit 130 .
存储电容Cs包含第一端和第二端,其中存储电容Cs的第一端耦接于第二节点N2,且用于接收数据电压Vdata。存储电容Cs的第二端则直接耦接于第三节点N3,且用于接收参考电压Vref。The storage capacitor Cs includes a first terminal and a second terminal, wherein the first terminal of the storage capacitor Cs is coupled to the second node N2 for receiving the data voltage Vdata. The second terminal of the storage capacitor Cs is directly coupled to the third node N3 for receiving the reference voltage Vref.
发光单元116包含阳极端和阴极端,阳极端耦接于第三节点N3,阴极端则用于接收系统低电压VSS。The light emitting unit 116 includes an anode terminal and a cathode terminal, the anode terminal is coupled to the third node N3, and the cathode terminal is used for receiving the system low voltage VSS.
换言之,发光单元116的阳极端直接耦接于存储电容Cs的第二端和第一开关SW1的第二端。In other words, the anode terminal of the light emitting unit 116 is directly coupled to the second terminal of the storage capacitor Cs and the second terminal of the first switch SW1.
写入电路114耦接于第二节点N2和第三节点N3,且用于自源极驱动电路120接收数据电压Vdata。写入电路114还用于依据像素电路110的操作状态,决定是否提供数据电压Vdata至第二节点N2,以及是否提供参考电压Vref至第三节点N3。The writing circuit 114 is coupled to the second node N2 and the third node N3 and is used for receiving the data voltage Vdata from the source driving circuit 120 . The writing circuit 114 is also used to determine whether to provide the data voltage Vdata to the second node N2 and whether to provide the reference voltage Vref to the third node N3 according to the operation state of the pixel circuit 110 .
在本实施例中,写入电路114包含第二开关SW2和第三开关SW3。第二开关SW2包含第一端、第二端和控制端,其中第二开关SW2的第一端用于自源极驱动电路120接收数据电压Vdata,第二开关SW2的第二端则耦接于第二节点N2。In this embodiment, the writing circuit 114 includes a second switch SW2 and a third switch SW3. The second switch SW2 includes a first terminal, a second terminal and a control terminal, wherein the first terminal of the second switch SW2 is used to receive the data voltage Vdata from the source driving circuit 120, and the second terminal of the second switch SW2 is coupled to The second node N2.
第三开关SW3包含第一端、第二端和控制端,第三开关SW3的第一端用于接收参考电压Vref,第三开关SW3的第二端耦接于第三节点N3。其中,第二开关SW2的控制端和第三开关SW3的控制端都用于自栅极驱动电路130接收第二控制信号CT2。The third switch SW3 includes a first terminal, a second terminal and a control terminal, the first terminal of the third switch SW3 is used for receiving the reference voltage Vref, and the second terminal of the third switch SW3 is coupled to the third node N3. Wherein, both the control terminal of the second switch SW2 and the control terminal of the third switch SW3 are used for receiving the second control signal CT2 from the gate driving circuit 130 .
在本实施例中,驱动晶体管112用于提供驱动电流Idri至发光单元116的阳极端。并且,驱动晶体管112可决定驱动电流Idri的大小,以使发光单元116产生特定灰阶的亮度。In this embodiment, the driving transistor 112 is used to provide the driving current Idri to the anode terminal of the light emitting unit 116 . Moreover, the driving transistor 112 can determine the magnitude of the driving current Idri, so that the light emitting unit 116 can generate brightness of a specific gray scale.
实作上,驱动晶体管112、第一开关SW1、第二开关SW2和第三开关SW3可以用P型薄膜晶体管或是其他合适的晶体管来实现。发光单元116则可以用有机发光二极管(organiclight-emitting diode)或是微发光二极管(micro light-emitting diode)等等发光材料来实现,然本发明并不以此为限。In practice, the driving transistor 112 , the first switch SW1 , the second switch SW2 and the third switch SW3 can be realized by P-type thin film transistors or other suitable transistors. The light-emitting unit 116 can be realized by light-emitting materials such as organic light-emitting diodes or micro light-emitting diodes, but the present invention is not limited thereto.
图3为依据本公开文件一实施例的图1的像素电路110的运作时序图。以下将以图2搭配图3来进一步说明像素电路110的运作方式。如图3所示,在写入阶段T1中,第一控制信号CT1为禁能电平(例如,高电压电平),且第二控制信号CT2为致能电平(例如,低电压电平)。因此,第一开关SW1处于关断状态,且第二开关SW2和第三开关SW3处于导通状态。FIG. 3 is an operation timing diagram of the pixel circuit 110 in FIG. 1 according to an embodiment of the disclosure. The operation of the pixel circuit 110 will be further described below with reference to FIG. 2 and FIG. 3 . As shown in FIG. 3, in the writing phase T1, the first control signal CT1 is at a disable level (for example, a high voltage level), and the second control signal CT2 is at an enable level (for example, a low voltage level ). Therefore, the first switch SW1 is in an off state, and the second switch SW2 and the third switch SW3 are in an on state.
图4为图1的像素电路110于写入阶段T1的等效电路驱动示意图。如图4所示,数据电压Vdata会通过第二开关SW2传递至第二节点N2,使得第二节点N2的第二节点电压V2等于数据电压Vdata。参考电压Vref会通过第三开关SW3传递至第三节点N3,使得第三节点N3的第三节点电压V3等于参考电压Vref。FIG. 4 is a schematic diagram of driving the equivalent circuit of the pixel circuit 110 in FIG. 1 in the writing phase T1. As shown in FIG. 4 , the data voltage Vdata is transmitted to the second node N2 through the second switch SW2 , so that the second node voltage V2 of the second node N2 is equal to the data voltage Vdata. The reference voltage Vref is transmitted to the third node N3 through the third switch SW3, so that the third node voltage V3 of the third node N3 is equal to the reference voltage Vref.
在本实施例中,参考电压Vref低于系统低电压VSS,所以可使发光单元116于写入阶段T1中维持于关断状态,以增加显示面板100的对比度。In this embodiment, the reference voltage Vref is lower than the system low voltage VSS, so the light emitting unit 116 can be kept in the off state in the writing phase T1 to increase the contrast of the display panel 100 .
接着,在发光阶段T2中,第一控制信号CT1为致能电平,且第二控制信号CT2为禁能电平。因此,第一开关SW1处于导通状态,且第二开关SW2和第三开关SW3处于关断状态。Next, in the light-emitting phase T2, the first control signal CT1 is at an enable level, and the second control signal CT2 is at a disable level. Therefore, the first switch SW1 is in the on state, and the second switch SW2 and the third switch SW3 are in the off state.
在本实施例的发光阶段T2中,第二控制信号CT2会先自致能电平切换至禁能电平,然后第一控制信号CT1才从禁能电平切换至致能电平。然而,本公开文件并不以此为限,在某些实施例中,第一控制信号CT1自禁能电平切换至致能电平的同时,第二控制信号CT2会自致能电平切换至禁能电平。In the light-emitting phase T2 of this embodiment, the second control signal CT2 is switched from the enable level to the disable level first, and then the first control signal CT1 is switched from the disable level to the enable level. However, the present disclosure is not limited thereto. In some embodiments, when the first control signal CT1 switches from the disabled level to the enabled level, the second control signal CT2 switches from the enabled level to the disable level.
图5为图1的像素电路110于发光阶段T2的等效电路驱动示意图。如图5所示,驱动晶体管112会提供驱动电流Idri至第三节点N3以导通发光单元116。因此,第三节点电压V3会由参考电压Vref变化为发光单元116的阳极端电压Va。FIG. 5 is a schematic diagram of driving the equivalent circuit of the pixel circuit 110 in FIG. 1 in the light-emitting phase T2. As shown in FIG. 5 , the driving transistor 112 provides a driving current Idri to the third node N3 to turn on the light emitting unit 116 . Therefore, the third node voltage V3 changes from the reference voltage Vref to the anode terminal voltage Va of the light emitting unit 116 .
由于第二节点N2处于浮接状态(floating),所以第三节点电压V3的变化量会通过存储电容Cs的电容耦合效应传递至第二节点N2,使得第二节点电压V2于发光阶段T2中可由以下的《公式1》表示:Since the second node N2 is in a floating state (floating), the variation of the third node voltage V3 will be transferred to the second node N2 through the capacitive coupling effect of the storage capacitor Cs, so that the second node voltage V2 can be obtained by The following "Formula 1" expresses:
V2=Vdata+Va-Vref 《公式1》V2=Vdata+Va-Vref "Formula 1"
因此,驱动电流Idri可以由下列的《公式2》表示:Therefore, the driving current Idri can be expressed by the following "Formula 2":
其中,k表示驱动晶体管112的载子迁移率(carrier mobility)、栅极氧化层的单位电容大小以及栅极宽长比三者的乘积,Vth则表示驱动晶体管112的临界电压。Wherein, k represents the product of the carrier mobility of the driving transistor 112 , the unit capacitance of the gate oxide layer, and the gate width-to-length ratio, and Vth represents the threshold voltage of the driving transistor 112 .
由《公式2》可知,驱动电流Idri的大小和驱动晶体管112的临界电压有关。另外,发光单元116的阳极端电压Va会随着流经发光单元116的驱动电流Idri的大小而改变。It can be seen from "Formula 2" that the magnitude of the driving current Idri is related to the threshold voltage of the driving transistor 112 . In addition, the anode terminal voltage Va of the light emitting unit 116 will vary with the magnitude of the driving current Idri flowing through the light emitting unit 116 .
因此,当驱动晶体管112的临界电压包含临界电压变异量ΔVth而使得驱动电流Idri的大小改变时,第三节点电压V3会产生节点电压变异量ΔVa。在此情况下,第三节点电压V3于发光阶段T2中需改由以下的《公式3》表示:Therefore, when the threshold voltage of the driving transistor 112 includes the threshold voltage variation ΔVth so that the magnitude of the driving current Idri changes, the third node voltage V3 will generate a node voltage variation ΔVa. In this case, the third node voltage V3 needs to be expressed by the following "Formula 3" in the light-emitting phase T2:
V3=Va+ΔVa 《公式3》V3=Va+ΔVa "Formula 3"
节点电压变异量ΔVa还会通过存储电容Cs的电容耦合效应传递至第二节点N2,使得第二节点电压V2于发光阶段T2中需改由以下的《公式4》表示:The node voltage variation ΔVa is also transmitted to the second node N2 through the capacitive coupling effect of the storage capacitor Cs, so that the second node voltage V2 needs to be expressed by the following "Formula 4" in the light-emitting phase T2:
V2=Vdata+Va-Vref+ΔVa 《公式4》V2=Vdata+Va-Vref+ΔVa "Formula 4"
总结来说,当驱动晶体管112的临界电压变异时,驱动电流Idri在发光阶段T2中需改由以下的《公式5》表示:In summary, when the threshold voltage of the driving transistor 112 varies, the driving current Idri needs to be expressed by the following "Formula 5" in the light-emitting phase T2:
《公式5》"Formula 5"
在本实施例中,节点电压变异量ΔVa正相关于流经发光单元116的驱动电流Idri大小。并且,由《公式5》可知,驱动电流Idri的大小负相关于临界电压变异量ΔVth。因此,节点电压变异量ΔVa负相关于临界电压变异量ΔVth,且节点电压变异量ΔVa和临界电压变异量ΔVth之间的对应关系,可用于补偿临界电压变异量ΔVth对驱动电流Idri的影响。In this embodiment, the node voltage variation ΔVa is directly related to the magnitude of the driving current Idri flowing through the light emitting unit 116 . Moreover, it can be seen from "Formula 5" that the magnitude of the driving current Idri is negatively related to the threshold voltage variation ΔVth. Therefore, the node voltage variation ΔVa is negatively correlated with the critical voltage variation ΔVth, and the corresponding relationship between the node voltage variation ΔVa and the critical voltage variation ΔVth can be used to compensate the influence of the critical voltage variation ΔVth on the driving current Idri.
例如,当驱动晶体管112具有较大的临界电压变异量ΔVth而使得驱动电流Idri偏低时,节点电压变异量ΔVa会较小。此时,较小的节点电压变异量ΔVa会经由存储电容Cs回授至第二节点N2,使得驱动晶体管112具有较大的源极/栅极电压差,进而使得驱动电流Idri上升。For example, when the driving transistor 112 has a larger threshold voltage variation ΔVth and the driving current Idri is lower, the node voltage variation ΔVa will be smaller. At this time, the smaller node voltage variation ΔVa is fed back to the second node N2 via the storage capacitor Cs, so that the driving transistor 112 has a larger source/gate voltage difference, thereby increasing the driving current Idri.
又例如,当驱动晶体管112具有较小的临界电压变异量ΔVth而使得驱动电流Idri偏高时,节点电压变异量ΔVa会较大。此时,较大的节点电压变异量ΔVa会经由存储电容Cs回授至第二节点N2,使得驱动晶体管112具有较小的源极/栅极电压差,进而使得驱动电流Idri下降。For another example, when the driving transistor 112 has a smaller threshold voltage variation ΔVth and the driving current Idri is higher, the node voltage variation ΔVa will be larger. At this time, the larger node voltage variation ΔVa is fed back to the second node N2 via the storage capacitor Cs, so that the driving transistor 112 has a smaller source/gate voltage difference, thereby reducing the driving current Idri.
换言之,即使位于显示面板100不同区域的驱动晶体管112具有不同的临界电压,这些驱动晶体管112提供的驱动电流Idri仍会和数据电压Vdata具有近乎固定的对应关系。In other words, even though the driving transistors 112 located in different regions of the display panel 100 have different threshold voltages, the driving current Idri provided by these driving transistors 112 still has a nearly fixed corresponding relationship with the data voltage Vdata.
在某些实施例中,第一开关SW1、第二开关SW2和第三开关SW3是用N型晶体管来实现。在此情况下,第一控制信号CT1和第二控制信号CT2的致能电平是高电压电平,禁能电平则是低电压电平。In some embodiments, the first switch SW1 , the second switch SW2 and the third switch SW3 are implemented with N-type transistors. In this case, the enabling levels of the first control signal CT1 and the second control signal CT2 are high voltage levels, and the disabling levels are low voltage levels.
表一展示了依据上述实施例的显示面板100实作的显示面板的实际亮度测量结果,其中显示面板被分为总共九个不同的区域,每个区域包含多个依据上述实施例的像素电路110实作的像素电路。如表一所示,显示面板上九个不同区域具有各自的亮度测量数值,其中亮度测量数值的单位为尼特(nit)。Table 1 shows the actual luminance measurement results of the display panel implemented by the display panel 100 according to the above-mentioned embodiment, wherein the display panel is divided into a total of nine different regions, and each region contains a plurality of pixel circuits 110 according to the above-mentioned embodiment Realized pixel circuit. As shown in Table 1, nine different regions on the display panel have their respective luminance measurement values, where the unit of the luminance measurement values is nit.
表一Table I
由表一可知,显示面板100和像素电路110在高灰阶下,在显示面板100的不同的分区皆可以提供大致接近的亮度。It can be seen from Table 1 that the display panel 100 and the pixel circuit 110 can provide roughly similar luminance in different subregions of the display panel 100 under high grayscale.
表二展示了依据上述实施例的显示面板100实作的显示面板的另一个实际亮度测量结果。相较于表一的测量例子,于表二的测量例子中,显示面板被设置为具有较低的灰阶。Table 2 shows another actual luminance measurement result of the display panel implemented according to the display panel 100 of the above-mentioned embodiment. Compared with the measurement example in Table 1, in the measurement example in Table 2, the display panel is set to have a lower gray scale.
表二Table II
表三展示了依据上述实施例的显示面板100实作的显示面板的再一个实际亮度测量结果。相较于表二的测量例子,于表三的测量例子中,显示面板被设置为具有更低的灰阶。Table 3 shows another actual luminance measurement result of the display panel implemented according to the display panel 100 of the above-mentioned embodiment. Compared with the measurement example in Table 2, in the measurement example in Table 3, the display panel is set to have a lower gray scale.
表三Table three
表四展示了依据上述实施例的显示面板100实作的显示面板的又一个实际亮度测量结果。相较于表三的测量例子,于表四的测量例子中,显示面板被设置为具有又更低的灰阶。Table 4 shows another actual luminance measurement result of the display panel implemented according to the display panel 100 of the above-mentioned embodiment. Compared with the measurement example in Table 3, in the measurement example in Table 4, the display panel is set to have a lower gray scale.
表四Table four
由表一至表四可知,显示面板100和像素电路110在不同的灰阶下,在显示面板100的不同的分区皆可以提供亮度相近的均匀显示画面。From Table 1 to Table 4, it can be known that the display panel 100 and the pixel circuit 110 can provide uniform display images with similar brightness in different partitions of the display panel 100 under different gray scales.
综上所述,像素电路110的电路架构简单,且以少量的操作信号搭配至少两个操作阶段即可补偿驱动晶体管112的临界电压变异。因此,显示面板100可满足窄边框、高PPI以及高分辨率等等需求。To sum up, the circuit structure of the pixel circuit 110 is simple, and the variation of the threshold voltage of the driving transistor 112 can be compensated with a small number of operation signals and at least two operation stages. Therefore, the display panel 100 can meet requirements such as narrow frame, high PPI, and high resolution.
在说明书及权利要求中使用了某些词汇来指称特定的元件。然而,所属技术领域中技术人员应可理解,同样的元件可能会用不同的名词来称呼。说明书及权利要求并不以名称的差异做为区分元件的方式,而是以元件在功能上的差异来做为区分的基准。在说明书及权利要求所提及的“包含”为开放式的用语,故应解释成“包含但不限定于”。另外,“耦接”在此包含任何直接及间接的连接手段。因此,若文中描述第一元件耦接于第二元件,则代表第一元件可通过电性连接或无线传输、光学传输等信号连接方式而直接地连接于第二元件,或者通过其他元件或连接手段间接地电性或信号连接至该第二元件。Certain terms are used in the description and claims to refer to particular elements. However, those skilled in the art should understand that the same element may be called by different terms. The specification and claims do not use the difference in name as the way to distinguish components, but the difference in function of the components as the basis for distinction. The "comprising" mentioned in the specification and claims is an open term, so it should be interpreted as "including but not limited to". In addition, "coupled" herein includes any direct and indirect connection means. Therefore, if it is described that the first element is coupled to the second element, it means that the first element can be directly connected to the second element through electrical connection or signal connection means such as wireless transmission or optical transmission, or through other elements or connections. The means are indirectly electrically or signally connected to the second element.
另外,除非说明书中特别指明,否则任何单数格的用语都同时包含复数格的涵义。In addition, unless otherwise specified in the specification, any singular term also includes plural meanings.
以上仅为本公开文件的优选实施例,凡依本公开文件权利要求所做的均等变化与修饰,皆应属本公开文件的涵盖范围。The above are only preferred embodiments of the disclosure, and all equivalent changes and modifications made in accordance with the claims of the disclosure shall fall within the scope of the disclosure.
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