CN108598005B - Preparation method of indium oxide thin film transistor with low sub-threshold swing amplitude - Google Patents
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- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 47
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- ORVACBDINATSAR-UHFFFAOYSA-N dimethylaluminum Chemical compound C[Al]C ORVACBDINATSAR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 abstract 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000005300 metallic glass Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 229910009112 xH2O Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910013504 M-O-M Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明公开了一种低亚阈值摆幅的氧化铟薄膜晶体管的制备方法，属于半导体薄膜晶体管制备技术领域。该方法采用原子层淀积（ALD）设备，在重掺杂硅衬底上沉积一层氧化铝薄膜，再采用旋涂的方式，将硝酸铟的水溶液均匀涂覆在氧化铝薄膜上，100‑150℃预热10 min后，置于高压汞灯下方10cm处进行1.5 h的光退火，使硝酸铟分解成氧化铟。最后用热蒸发的方式，将铝电极蒸镀到氧化铟薄膜上，得到了具有低亚阈值摆幅的薄膜晶体管。本发明优化了现有的氧化铟薄膜晶体管制备技术，成本低廉，操作简便，材料环保，因采用高压汞灯进行光退火，使得氧化铟薄膜在100℃以下就能制备，且得到的薄膜晶体管亚阈值摆幅较低，工作性能优异。
The invention discloses a preparation method of an indium oxide thin film transistor with low subthreshold swing, belonging to the technical field of semiconductor thin film transistor preparation. The method uses atomic layer deposition (ALD) equipment to deposit an aluminum oxide film on a heavily doped silicon substrate, and then uses a spin coating method to uniformly coat an aqueous solution of indium nitrate on the aluminum oxide film, 100- After preheating at 150 °C for 10 min, it was placed 10 cm below the high-pressure mercury lamp for 1.5 h photo-annealing to decompose indium nitrate into indium oxide. Finally, the aluminum electrode is evaporated onto the indium oxide thin film by thermal evaporation to obtain a thin film transistor with low subthreshold swing. The invention optimizes the existing indium oxide thin film transistor preparation technology, has low cost, simple operation, and environmental protection materials. Because the high pressure mercury lamp is used for light annealing, the indium oxide thin film can be prepared below 100 DEG C, and the obtained thin film transistor is substandard. Low threshold swing and excellent performance.
Description
Technical Field
The invention relates to the technical field of metal oxide semiconductor thin film transistor preparation, in particular to an indium oxide thin film transistor with low subthreshold swing amplitude prepared by adopting an annealing process with the advantage of low temperature.
Background
Thin Film Transistors (TFTs) are pixel driving devices of display backplanes and other optoelectronic devices, and in which an amorphous metal oxide semiconductor has been the research focus of people as a channel layer material of the TFT. The common amorphous metal oxide semiconductor comprises indium oxide (In)2O3)、Indium Zinc Oxide (IZO), Indium Gallium Zinc Oxide (IGZO), and the like, which are candidates for next-generation semiconductor materials in the field of flat panel displays because of their advantages such as high mobility, high transparency, and large area uniformity.
The preparation process of amorphous metal oxide semiconductor has been greatly developed, radio frequency magnetron sputtering, direct current magnetron sputtering, atomic layer deposition and the like are relatively mature semiconductor preparation processes, and in recent years, a solution method gradually draws attention of scientific researchers. Compared with preparation processes based on vacuum, such as magnetron sputtering, atomic layer deposition and the like, the solution method process adopts liquid-phase raw materials, has low cost and easy patterning, and is suitable for large-area production. Therefore, many researches and researches have been conducted on solution processes such as spin coating (spin coating), spray pyrolysis (spray pyrolysis), screen printing (screen printing), and ink jet printing (ink jet printing). Among them, the solvent evaporation and the decomposition of metal salt into metal oxide require high energy enough, so that most of the metal oxide thin film transistors prepared by the solution method need high temperature annealing. And the excessive temperature in the process not only wastes resources and increases the cost, but also is not beneficial to the development of the metal oxide thin film transistor towards the flexible device. In order to lower the annealing temperature, many attempts have been made by researchers, but the problems of many process steps, complicated operation, use of toxic solvents, and the like still remain.
On the other hand, the preparation quality and the performance of the thin film transistor can be measured by a plurality of parameters, wherein the subthreshold swing SS is an important index for measuring the interface state between the channel layer and the dielectric layer. When the applied gate voltage is less than the threshold voltage, the transistor operates in the sub-threshold state, and the sub-threshold swing SS is measured at the maximum slope (in the sub-threshold region) of the transfer characteristic curve (with the ordinate being logarithmic), and has the formula
Where k is Boltzmann's constant, T is absolute temperature, q is electronic charge, CDAnd CSSRespectively, depletion layer capacitance and interface state capacitance per unit area. When C is presentDAnd CSSAt both 0's, the sub-threshold swing SS reaches a minimum theoretical value of 60 mV/dec. In the sub-threshold region, depletion layer capacitance CDIs generally very small and can be ignored, but the interface state capacitance CSSAnd is not negligible. At the interface between the channel layer and the dielectric layer, a large number of defects, i.e., a large number of interface states, are distributed, which form a capacitance CSSResulting in the generation of a sub-threshold swing SS, that is, the sub-threshold swing SS reflects the defect density of the interface between the channel layer and the dielectric layer from the side.
As is well known, moore's law has developed to date, and what is needed is not only an improvement in process technology, but also a requirement for transistors that can operate with low power consumption, i.e., that the operating voltage of the transistor be reduced. The smaller subthreshold swing can indicate that the interface state between the channel layer and the dielectric layer which are filled with electrons is less, so that the channel can be quickly opened or closed, namely the threshold voltage or the working voltage of the transistor is reduced. Therefore, the reduction of the subthreshold swing of the transistor is crucial to the improvement of the device performance and the development of the electronic industry.
Disclosure of Invention
The invention aims to reduce the subthreshold swing of an indium oxide thin film transistor and realize the low-temperature preparation of the indium oxide thin film, and provides a preparation method of the indium oxide thin film transistor.
The thin film transistor prepared by the invention is of a back gate top contact structure, namely, the substrate of the transistor is heavily doped low-resistance silicon and also plays the role of a grid, a dielectric layer is arranged above the grid, a semiconductor channel layer is arranged above the dielectric layer, and a source electrode and a drain electrode are arranged above the channel layer. Wherein, the dielectric layer adopts 10-20nm of high dielectric material alumina, the semiconductor channel layer adopts indium oxide, and the source electrode and the drain electrode adopt 60-70nm of aluminum electrodes.
The specific technical scheme for realizing the purpose of the invention is as follows:
a preparation method of an indium oxide thin film transistor with low subthreshold swing comprises the following specific steps:
step 1: preparation of indium oxide precursor solution
Indium nitrate hydrate In (NO)3)3·xH2Dissolving O in deionized water with the concentration of 0.1mol/L, and magnetically stirring at room temperature for 6-12h to form a clear and transparent indium oxide precursor solution;
step 2: preparation of alumina dielectric layer film
Respectively immersing the heavily doped silicon substrate in deionized water, acetone and isopropanol to carry out ultrasonic cleaning for 10min, drying the substrate by using a nitrogen gun, and further cleaning the surface of the substrate by using a plasma cleaning method to increase the surface activity; preparing a high dielectric aluminum oxide film on the silicon substrate by using ALD equipment, wherein the prepared sources are dimethyl aluminum and deionized water, the central temperature of the reaction chamber is 150-; the thickness of the film is 10-20 nm;
and step 3: preparation of indium oxide semiconductor layer film
Cleaning the surface of the silicon substrate with the high-dielectric aluminum oxide film obtained in the step 2 by using a plasma cleaning method, and spin-coating the indium oxide precursor solution obtained in the step 1 on a spin coater by using a sol-gel method, wherein the spin-coating speed is 5000rpm and the time is 25 s; after the spin coating is finished, the silicon substrate is placed on a heating plate at the temperature of 100-150 ℃ for preheating for 10min, and after natural cooling, the silicon substrate is placed at a position 10cm below a lamp tube of a high-pressure mercury lamp for light annealing for 1.5h to form an indium oxide film with the thickness of 30-60 nm;
and 4, step 4: preparation of source and drain electrodes
And (3) placing a mask on the surface of the silicon substrate prepared with the indium oxide film obtained in the step (3), and evaporating metal aluminum onto the indium oxide film by adopting a vacuum thermal evaporation method to form a source electrode and a drain electrode to obtain the indium oxide film transistor with the low sub-threshold swing amplitude.
The gas source for plasma cleaning in the step 2 is oxygen, the gas flow is 0.4-0.6NL/min, the cleaning power is 200W, and the time is 2-2.5 min.
The gas source for plasma cleaning in the step 3 is oxygen, the gas flow is 0.4-0.6NL/min, the cleaning power is 200W, and the time is 60-70 s.
In the step 3, the power of the high-pressure mercury lamp is 1000W, and the wavelength of light waves is 365 nm.
The length-width ratio of the source electrode channel to the drain electrode channel obtained in the step 4 is 1:24, and the thickness of the electrode is 60-70 nm.
Indium nitrate hydrate In (NO3) 3. xH2O according to the invention is commercially available.
Compared with the prior art, the invention has the following greatest advantages: because the indium oxide is subjected to the optical annealing mode, the interface defects between the indium oxide channel layer and the aluminum oxide dielectric layer are greatly reduced, an excellent contact interface is formed, and the subthreshold swing of the thin film transistor is greatly reduced. In addition, the temperature requirement in the process is reduced by adopting an illumination annealing mode, the aqueous precursor solution is low in price and environment-friendly, the film preparation operation is simple, the process compatibility is strong, the application range is wide, and the large-scale production and application are easy.
Drawings
FIG. 1 is a schematic structural diagram of an indium oxide thin film transistor according to the present invention; in the figure, 1-source electrode of transistor, 2-drain electrode of transistor, 3-alumina dielectric layer, 4-indium oxide channel layer, 5-n type heavily doped silicon substrate;
FIG. 2 is a graph showing the output characteristics of an indium oxide thin film transistor according to the present invention;
FIG. 3 is a graph showing transfer characteristics of an indium oxide thin film transistor according to the present invention.
Examples
Indium nitrate hydrate In (NO3)3 xH2O was dissolved In deionized water at a concentration of 0.1mol/L and magnetically stirred at room temperature for 8 hours to form a clear and transparent indium oxide precursor solution. And respectively immersing the heavily-doped low-resistance silicon substrate into deionized water, acetone and isopropanol to carry out ultrasonic cleaning for 10min, blow-drying the substrate by using a nitrogen gun, and further cleaning the surface of the substrate by adopting a plasma cleaning method.
After cleaning, preparing a high-dielectric-constant aluminum oxide film with the thickness of 11nm on a silicon substrate by using atomic layer deposition equipment, cleaning the aluminum oxide film for 70s by using oxygen plasma, immediately adopting a spin-coating method, and spin-coating an indium oxide precursor solution on the aluminum oxide film at the rotation speed of 5000rpm for 25 s. After the spin coating was completed, the sample was preheated for 10min on a heating plate at 150 ℃.
After natural cooling, the sample was placed 10cm below the lamp tube of a high-pressure mercury lamp and photo-annealed for 1.5 h. And naturally cooling to room temperature, placing the mask on the surface of a sample, and evaporating metal aluminum onto the indium oxide film by adopting a vacuum thermal evaporation method to form a source electrode and a drain electrode to obtain the high dielectric aluminum oxide-based indium oxide thin film transistor. The whole process is simple and easy to implement, the aqueous solution is low in price and environment-friendly, the indium oxide which needs the annealing temperature of about 300 ℃ in the past can be successfully prepared even below 100 ℃, and the temperature requirement of the process is greatly reduced. Moreover, the indium oxide film prepared by the method can form good contact with an aluminum oxide dielectric layer, and a thin film transistor with lower subthreshold swing is obtained.
As is well known, the channel layer is the most critical factor affecting the performance of the thin film transistor, because the quality of the thin film of the channel layer directly affects the contact condition between the channel layer and the dielectric layer and between the channel layer and the source/drain electrodes, and the channel layer with few defects in the body can reduce scattering in the process of electron transmission and increase the mobility of electrons, so the working performance of the transistor can intuitively reflect the preparation quality of the channel layer.
In the process, photons with high energy initiate photochemical splitting of oxygen groups, metal atoms and oxygen atoms are promoted to form an M-O-M network structure, and with the prolonging of the photo annealing time, impurity ions such as oxygen, nitrogen and the like in the film are slowly eliminated, so that a uniform and compact indium oxide film is gradually formed. During this process, the temperature to which the sample is subjected is constantly monitored in real time by a thermocouple, and the temperature is always found to be below 100 ℃.
In order to understand the working performance of the transistor, the source of the transistor is grounded, a fixed positive voltage is applied to the gate, and a scanning voltage is applied to the drain, so that a relation curve of drain-source current and drain-source voltage, namely an output characteristic curve shown in fig. 2, is obtained; the three curves respectively correspond to the relation curves of drain-source current changing along with drain-source voltage when the gate-source voltage is 3V, 4V and 5V. It can be seen from the figure that the three output curves all pass through the origin, indicating that the gate leakage current of the transistor is very small, i.e. the alumina plays a good insulating role.
The drain of the transistor is applied with a fixed positive voltage, and the gate is applied with a scanning voltage, so as to obtain a relation curve of drain-source current and gate-source voltage, i.e. a transfer characteristic curve as shown in fig. 3. The on-off state of the curve is obvious, and the ratio of the on-state current to the off-state current is about 106. In addition, a number of electrical parameters were extracted from the transfer characteristic curve, with a subthreshold swing of 76.1mV/dec and a threshold voltage of 0.28V.
As can be seen from FIGS. 2 and 3, the obtained thin film transistor has low operating voltage and low subthreshold swing, which is close to the theoretical value of 60 mV/dec. Therefore, the invention can effectively prepare the indium oxide film with excellent quality by adopting the optical annealing mode, and forms a contact interface with less defects with the aluminum oxide dielectric layer to obtain the indium oxide film transistor with lower subthreshold swing, thereby laying a foundation for the development of the indium oxide transistor to smaller size.
Claims (1)
1. A preparation method of an indium oxide thin film transistor with low subthreshold swing is characterized by comprising the following specific steps:
step 1: preparation of indium oxide precursor solution
Indium nitrate hydrate In (NO)3)3·xH2Dissolving O in deionized water with the concentration of 0.1mol/L, and magnetically stirring at room temperature for 6-12h to form a clear and transparent indium oxide precursor solution;
step 2: preparation of alumina dielectric layer film
Respectively immersing the heavily doped silicon substrate in deionized water, acetone and isopropanol to carry out ultrasonic cleaning for 10min, drying the substrate by using a nitrogen gun, and further cleaning the surface of the substrate by using a plasma cleaning method to increase the surface activity; preparing an aluminum oxide dielectric layer film on the silicon substrate by using ALD equipment, wherein the prepared sources are dimethyl aluminum and deionized water, the central temperature of the reaction chamber is 150-200 ℃, the peripheral temperature is 200-250 ℃, the carrier gas is nitrogen, and the nitrogen flow during the reaction is 20 sccm; the thickness of the aluminum oxide dielectric layer film is 10-20 nm;
and step 3: preparation of indium oxide semiconductor layer film
Cleaning the surface of the silicon substrate prepared with the alumina dielectric layer film obtained in the step 2 by adopting a plasma cleaning method again, and then spin-coating the indium oxide precursor solution obtained in the step 1 on a spin coater by adopting a sol-gel method, wherein the spin-coating speed is 5000rpm, and the time is 25 s; after the spin coating is finished, the silicon substrate is placed on a heating plate at the temperature of 100-150 ℃ for preheating for 10min, and after natural cooling, the silicon substrate is placed at a position 10cm below a lamp tube of a high-pressure mercury lamp for light annealing for 1.5h to form an indium oxide semiconductor layer film with the thickness of 30-60 nm;
and 4, step 4: preparation of source and drain electrodes
Placing a mask on the surface of the silicon substrate prepared with the indium oxide semiconductor layer film obtained in the step (3), and evaporating metal aluminum onto the indium oxide semiconductor layer film by adopting a vacuum thermal evaporation method to form a source electrode and a drain electrode to obtain the indium oxide thin film transistor with the low sub-threshold swing amplitude; wherein:
the gas source for plasma cleaning in the step 2 is oxygen, the gas flow is 0.4-0.6NL/min, the cleaning power is 200W, and the time is 2-2.5 min;
in the step 3, the gas source for plasma cleaning is oxygen, the gas flow is 0.4-0.6NL/min, the cleaning power is 200W, and the time is 60-70 s;
in step 3, the power of the high-pressure mercury lamp is 1000W;
the length-width ratio of the source electrode channel to the drain electrode channel obtained in the step 4 is 1:24, and the thickness of the electrode is 60-70 nm.
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| CN112908852A (en) * | 2021-01-11 | 2021-06-04 | 华东师范大学 | Hafnium-doped indium oxide thin film transistor and preparation method thereof |
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