CN108538450B - Conducting film structure, manufacturing method thereof, touch panel and display screen - Google Patents
Conducting film structure, manufacturing method thereof, touch panel and display screen Download PDFInfo
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- CN108538450B CN108538450B CN201810718561.3A CN201810718561A CN108538450B CN 108538450 B CN108538450 B CN 108538450B CN 201810718561 A CN201810718561 A CN 201810718561A CN 108538450 B CN108538450 B CN 108538450B
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- H—ELECTRICITY
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- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Physics & Mathematics (AREA)
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Abstract
The invention provides a conductive film structure, a manufacturing method thereof, a touch panel and a display screen. In the conductive film structure, the total nano metal wire layer is divided into at least two nano metal wire layers through the first antireflection film layer, and the thickness of each nano metal wire layer is reduced relative to the total nano metal wire layer, so that the reflected light of the nano metal wire layers is reduced, and the haze of the conductive film structure is finally reduced. And through the arrangement of the first antireflection film layer, transmitted light is increased, and reflected light of the nanometer metal wire layer is further reduced, so that the haze of the conductive film structure is reduced.
Description
Technical Field
The invention relates to the technical field of touch control, in particular to a conductive film structure, a manufacturing method of the conductive film structure, a touch panel and a display screen.
Background
Touch devices are gradually favored by the electronic communication industry due to their advantages of easy operation, good imaging effect, diversified functions, etc., and are widely applied to products such as information system devices, home appliances, communication devices, personal portable devices, etc. With the rapid rise of touch panels in the communication industry in recent years, especially the vigorous development in the mobile phone communication industry, touch panels are becoming the first choice of imaging display devices nowadays. The touch panel with the highest utilization rate is mainly a resistive touch panel and a capacitive touch panel, but users mostly select the capacitive touch panel as the best preferred device for the consideration of controllability, usability and surface appearance.
In a capacitive touch panel of a conventional smart phone, a material of a touch electrode is typically Indium Tin Oxide (ITO). The ITO has high light transmittance and good conductivity. However, as the size of the touch panel gradually increases, particularly when the touch panel is applied to a panel with a size of more than 15 inches, ITO defects become more and more prominent, and the most obvious defects include that the surface resistance of ITO is too large, the price is high, good conductivity and sufficient sensitivity of the large-size touch panel cannot be guaranteed, and the touch panel cannot be applied to the development trend of continuous low price of electronic products.
As such, the industry has been working on developing alternative materials to ITO, with Silver Nanowires (SNW) being an emerging material that is beginning to replace ITO as a preferred conductive material. The nano silver wire has excellent conductivity of silver, and has excellent light transmittance and bending resistance due to the size effect of the nano grade, so the nano silver wire can be used as a material for replacing ITO (indium tin oxide) as a touch electrode to realize a touch panel based on the nano silver wire.
However, the silver nanowires themselves have a haze phenomenon, which is a cloudy or turbid appearance caused by surface light diffusion of the silver nanowires in the conductive film. The problem of haze of the screen causes strong screen reflection light under the condition of outdoor scene light irradiation, and the screen cannot be seen clearly by a user in a serious case, which is also a problem to be solved in the industry.
Disclosure of Invention
The invention aims to provide a conductive film structure, a manufacturing method thereof, a touch panel and a display screen, which can reduce the light reflection of a nanometer metal wire layer so as to reduce the haze of the conductive film structure.
To achieve the above object, the present invention provides a conductive film structure comprising:
at least two layers of metal nanowire layers are arranged in a stacked mode;
the first antireflection film layer is arranged between two adjacent nanometer metal wire layers, and a plurality of through holes are formed in the first antireflection film layer; and the two adjacent layers of nano metal wire layers are conducted through the through holes.
Optionally, the conductive film structure comprises 2-6 layers of nanowire layers; the first antireflection film layer is arranged between any two adjacent nanometer metal wire layers.
Optionally, the total thickness of the conductive film structure is 10nm to 200 nm.
Optionally, the refractive index of each first antireflection film layer is between 1.0 and 1.5.
Optionally, the thickness of each first antireflection film layer corresponds to the thickness of a quarter-wave plate.
Optionally, all the nano metal wire layers are made of nano silver wires, and all the antireflection film layers are made of silicon oxide.
Correspondingly, the invention also provides a manufacturing method of the conducting film structure, which comprises the following steps:
forming a first nanowire layer;
forming a first antireflection film layer, wherein the first antireflection film layer covers the first nano metal wire layer;
forming a plurality of through holes, wherein the through holes are positioned in the first antireflection film layer and expose the first nanometer metal wire layer;
and forming a second nano metal wire layer, wherein the second nano metal wire layer covers the first antireflection film layer and is communicated with the first nano metal wire layer through the through hole.
Correspondingly, the present invention further provides a touch panel, comprising:
a substrate; and
and the conductive film is formed on the substrate and has the conductive film structure.
Optionally, the touch panel further includes: a second antireflective coating layer between the substrate and the conductive film structure.
Correspondingly, the invention further provides a display screen, and the display screen comprises the touch panel.
Compared with the prior art, the conductive film structure, the manufacturing method thereof, the touch panel and the display screen provided by the invention have the following beneficial effects:
the total nano metal wire layer is divided into at least two nano metal wire layers through the first antireflection film layer, and the thickness of each nano metal wire layer is reduced relative to the total nano metal wire layer, so that the reflected light of the nano metal wire layers is reduced, and the haze of the conductive film structure is finally reduced. And through the arrangement of the first antireflection film layer, transmitted light is increased, and reflected light of the nanometer metal wire layer is further reduced, so that the haze of the conductive film structure is reduced.
Furthermore, a second antireflection film layer is arranged between the conductive film structure and the substrate, so that the reflected light of the nano metal wire layer can be further reduced, and the haze of the conductive film structure is reduced.
Drawings
Fig. 1 is a schematic cross-sectional view of a conductive film structure according to an embodiment of the invention;
fig. 2 is a flowchart of a method for fabricating a conductive film structure according to an embodiment of the invention;
fig. 3 to 6 are schematic cross-sectional structures of steps of a method for manufacturing a conductive film structure according to an embodiment of the invention;
fig. 7 is a schematic cross-sectional structure view of a touch panel according to an embodiment of the invention.
Detailed Description
In order to make the contents of the present invention more clearly understood, the contents of the present invention will be further described with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The present invention is described in detail with reference to the drawings, and for convenience of explanation, the drawings are not enlarged partially according to the general scale, and should not be construed as limiting the present invention.
The core idea of the invention is that the total nano metal wire layer is divided into at least two nano metal wire layers by the first antireflection film layer, and the thickness of each nano metal wire layer is reduced relative to the total nano metal wire layer, so that the reflected light of the nano metal wire layers is reduced, and the haze of the conductive film structure is finally reduced. And through the arrangement of the first antireflection film layer, transmitted light is increased, and reflected light of the nanometer metal wire layer is further reduced, so that the haze of the conductive film structure is reduced.
The present invention provides a conductive film structure, comprising: at least two layers of metal nanowire layers are arranged in a stacked mode; the first antireflection film layer is arranged between two adjacent nanometer metal wire layers, and a plurality of through holes are formed in the first antireflection film layer; and the two adjacent layers of nano metal wire layers are conducted through the through holes.
Preferably, the conductive film structure comprises 2-6 nanometer metal wire layers, and the first antireflection film layer is arranged between any two adjacent nanometer metal wire layers.
Fig. 1 is a schematic cross-sectional structure diagram of a conductive film structure according to an embodiment of the present invention, please refer to fig. 1, in the embodiment, the conductive film structure includes: six metal nanowire layers are stacked, namely a first metal nanowire layer 31, a second metal nanowire layer 32, a third metal nanowire layer 33, a fourth metal nanowire layer 34, a fifth metal nanowire layer 35 and a sixth metal nanowire layer 36, the first antireflection film layer is arranged between any two adjacent nanowire layers, the first antireflection film layer 21 is arranged between the first nanowire layer 31 and the second nanowire layer 32, a first anti-reflection film layer 22 is disposed between the second nanowire layer 32 and the third nanowire layer 33, a first antireflection film layer 23 is provided between the third nanowire layer 33 and the fourth nanowire layer 34, a first anti-reflection film layer 24 is disposed between the fourth nanowire layer 34 and the fifth nanowire layer 35, a first antireflection film layer 25 is disposed between the fifth nanowire layer 35 and the sixth nanowire layer 36. And each first antireflection coating layer is provided with a through hole, so that the nano metal wire layer above the first antireflection coating layer is communicated with the nano metal wire layer below the first antireflection coating layer.
Of course, the number of layers of the metal nanowire layer is not limited to 2-6, and may also be a larger number of layers, and the larger the number of layers is, the thinner the metal nanowire layer of each layer may be, so as to better reduce the reflection of the metal nanowire layer, thereby reducing the haze of the conductive film structure. However, the number of layers of the nanowire layer is about the same, so that the number of layers of the first antireflection film layer is increased, which results in an increase in the total thickness of the whole conductive film structure. The total thickness of the conductive film structure is preferably between 10nm and 200 nm.
In the embodiment, the refractive index of each first antireflection film layer is between 1.0 and 1.5; the thickness of each first antireflection film layer is equal to that of the quarter-wave plate. Wherein the quarter-wave plate (quartz-wave plate) is a birefringent single crystal sheet with a certain thickness. Specifically, when the light is transmitted through the normal incidence, the phase difference between the ordinary light and the extraordinary light is equal to pi/2 or an odd multiple thereof, and such a wafer is called a quarter-wave plate or 1/4-wave plate. The conventional calculation method in which the ordinary light and extraordinary light are conceptually referred to as a quarter-wave plate is not described in detail herein.
All the nano-metal wire layers are preferably made of nano-silver wires, and all the antireflection film layers are preferably made of silicon oxide.
According to the invention, the total nano metal wire layer is divided into at least two nano metal wire layers through the first antireflection film layer, and the thickness of each nano metal wire layer is reduced relative to the total nano metal wire layer, so that the reflected light of the nano metal wire layers is reduced, and the haze of the conductive film structure is finally reduced. In addition, through the arrangement of the first antireflection film layer, transmitted light is increased, reflected light of the nanometer metal wire layer is further reduced, and accordingly haze of the conductive film structure is reduced
Fig. 2 is a flowchart of a method for manufacturing a conductive film structure according to an embodiment of the present invention, and as shown in fig. 2, the embodiment of the present invention provides a method for manufacturing a conductive film structure, including the following steps:
step S10: forming a first nanowire layer;
step S20: forming a first antireflection film layer, wherein the first antireflection film layer covers the first nano metal wire layer;
step S30: forming a plurality of through holes, wherein the through holes are positioned in the first antireflection film layer and expose the first nanometer metal wire layer;
step S40: and forming a second nano metal wire layer, wherein the second nano metal wire layer covers the first antireflection film layer and is communicated with the first nano metal wire layer through the through hole.
Fig. 3 to 7 are schematic cross-sectional structure diagrams of steps of a method for manufacturing a conductive film structure according to an embodiment of the present invention, and please refer to fig. 3 to 7 in conjunction with fig. 2 to describe in detail the method for manufacturing a conductive film structure according to the present invention:
in step S10, please refer to fig. 3, a first nanowire layer 31 is formed on a substrate.
The substrate is a flexible substrate, namely made of flexible materials, and if flexible materials are selected, the substrate is a material which has certain strength and certain flexibility in industry. The material of the substrate includes but is not limited to acryl, polymethyl methacrylate (PMMA), polyacrylonitrile-butadiene-styrene (ABS), Polyamide (PA), Polyimide (PI), polybenzimidazole Polybutylene (PB), polybutylene terephthalate (PBT), Polycarbonate (PC), polyether ether ketone (PEEK), Polyetherimide (PEI), polyether sulfone (PES), Polyethylene (PE), polyethylene terephthalate (PET), polyethylene tetrafluoroethylene (ETFE), polyethylene oxide, polyglycolic acid (PGA), polymethylpentene (PMP), Polyoxymethylene (POM), polyphenylene ether (PPE), polypropylene (PP), Polystyrene (PS), Polytetrafluoroethylene (PTFE), Polyurethane (PU), polyvinyl chloride (PVC), polyvinyl fluoride (PVF), polyvinylidene chloride (PVDC), polyvinylidene fluoride (PVDF), styrene-acrylonitrile (SAN), or the like. In this embodiment, the flexible substrate is made of PI.
In this embodiment, a rigid substrate such as a glass substrate may be coated with a flexible material, an antireflection film, a metal nanowire layer, and other elements may be formed on the flexible material, and after all processes are completed, the glass substrate under the flexible material may be peeled off to form the flexible substrate. It is also possible to coat a flexible material on a rigid substrate such as a glass substrate and then peel off the glass substrate under the flexible material to form a flexible substrate.
Referring to fig. 3, the first nanowire layer 31 is formed on the substrate. The material of the first nanowire layer 31 includes, but is not limited to, a silver nanowire. In this embodiment, a nano silver wire solution may be formed on the substrate, and the nano silver wire solution is a suspension solution formed by dissolving a nano silver wire in a specific solvent, such as water, an aqueous solution, an ionic solution, a salt-containing solution, a supercritical fluid, oil, or a mixture thereof, and the solvent may further contain an additive such as a dispersant, a surfactant, a cross-linking agent, a stabilizer, a wetting agent, or a thickener. And then solidifying the nano silver wire solution to form a nano silver wire layer. The nano silver wire layer comprises a substrate and nano silver wires embedded in the substrate, the nano silver wires are in lap joint through molecular force to form a conductive network, and the substrate is used for protecting the nano silver wires from being influenced by external environments such as corrosion and abrasion.
The method for forming the nano silver wire solution may be one of spin coating, slit coating, blade coating, wire bar coating, spray coating, roll coating, screen printing, gravure printing, offset printing, flexo printing, pad printing, or inkjet printing, and may also be deposition, sputtering, or the like. The curing method can be natural drying, simple baking or heating curing and the like, so that the nano silver wire solution is cured to form a nano silver wire layer.
In step S20, please refer to fig. 4, a first antireflection film layer 21 is formed on the first nanowire layer 31, and the first antireflection film layer 21 covers the first nanowire layer 31. The refractive index of the first antireflection film layer 21 is between 1.0 and 1.5, for example, the refractive index of the first antireflection film layer 21 is 1.0, 1.1, 1.2, 1.3, 1.4, or 1.5. The thickness of the first antireflection film layer 21 is odd times of that of the quarter-wave plate. The material of the first antireflection film layer 21 is an organic or inorganic substance, or an organic-inorganic hybrid coating, for example: the material of the first anti-reflection film layer 21 is one of silicon oxide, chlorofluoride, magnesium fluoride, silicon oxide, lithium fluoride, sodium fluoride, magnesium oxide, silicon hydrochloric acid, polyurethane, organosilicon, fluoropolymerized compound, acrylic resin and silica nanoparticle mixture, or an adhesive or any combination thereof. In this embodiment, the material of the first antireflection film layer 21 is preferably silicon oxide.
The first antireflection film layer 21 may be formed by physical deposition, chemical deposition, vacuum coating, printing, spray coating, flexo printing, nano printing, screen printing, blade coating, slot coating, spin coating, bar coating, roll coating, wire bar coating, or dip coating.
In step S30, please refer to fig. 5, a plurality of vias 21 ', the vias 21' are located in the first antireflection film layer 21 and expose the first nanowire layer 31.
Specifically, in this embodiment, a photoresist layer (not shown) may be formed on the first anti-reflection film layer 21, then the photoresist layer is exposed and developed to form a patterned photoresist layer, then the first anti-reflection film 21 is etched by using the patterned photoresist layer as a mask until the first metal nanowire layer 31 is exposed, finally the patterned photoresist layer is removed, and the through hole 21' exposing the first metal nanowire layer 31 is formed in the first anti-reflection film layer 21 by an ashing method.
In other embodiments, the layer 21' may be formed by other methods, such as laser drilling.
Preferably, the through holes 21' are uniformly distributed in the first antireflection film layer 21. Of course, the through holes 21 ' may also be randomly distributed in the first antireflection film layer 21, and the through holes 21 ' serve to conduct the subsequently formed second nanowire layer and the first nanowire layer 31, and the positions and the number of the through holes 21 ' are not limited in the present invention, so as to achieve the purpose of conduction, and may be determined according to actual requirements and specific process conditions.
In this embodiment, the longitudinal section of the through hole 21 'may be square, and the longitudinal section herein refers to a sectional shape of the through hole 21' viewed after being cut perpendicular to the substrate, that is, a shape shown in fig. 5. In other embodiments, the longitudinal section of the through hole 21' may also be regular trapezoid, inverted triangle, irregular shape, etc. Preferably, the size of the top opening of the through hole 21 'needs to be greater than or equal to the size of the bottom of the through hole 21', for example, the long side of the trapezoid is disposed at the top of the through hole 21 ', and the short side is disposed at the bottom of the through hole 21', such that when the shape structure with a large opening and a small bottom is adopted, the silver nanowire solution is easier to fill into the through hole 21 'during the subsequent coating, so that the silver nanowire solution can be uniformly and completely dissolved into the through hole 21', and the subsequently formed silver nanowire can be well conducted with the first metal nanomaterial layer 31. Of course, the shape of the through hole 21' is not limited in the present invention.
In step S40, please refer to fig. 6, a second nano metal layer 32 is formed, and the second nano metal layer 32 covers the first antireflection film layer 21 and is electrically connected to the first nano metal layer 31 through the through hole 21'.
The material of the second nano metal layer 32 includes, but is not limited to, a nano silver wire. The method for forming the second nanometal layer 32 may refer to the description of the first nanometal layer 31 in step S10, and the method for forming the second nanometal layer 32 may be the same as or different from the method for forming the first nanometal layer 31. For example, the method of forming the silver nanowire solution may be different, the method of curing the silver nanowire solution may be the same, or both the method of forming the silver nanowire and the method of curing the silver nanowire may be different. Of course, in consideration of the configuration of the device, in step S10 and step S40, the method of forming the silver nanowires is the same as the method of solidifying the silver nanowires, which is most preferable.
In the embodiment, the first and second metal nanowire layers 31 and 32 are connected to form a total metal nanowire layer, so that the thicknesses of the first and second metal nanowire layers 31 and 32 are reduced compared with the required thickness of the total metal nanowire layer, thereby reducing the reflected light of the metal nanowire layer and finally reducing the haze of the conductive film structure; and through the arrangement of the first antireflection film layer 21, transmitted light is increased, and the reflection of the nanometer metal wire layer is further reduced, so that the haze of the conductive film structure is reduced.
In another embodiment of the present invention, referring to fig. 1, after forming the second nanowire layer 32, the method further includes: the steps of forming the first antireflection film layer 21, the through holes 21' and the second metal nanowire layer 32 are repeated until an nth antireflection film layer and an nth metal nanowire layer are formed, wherein n is a positive integer greater than or equal to 3.
Referring to fig. 7, the following description will be given by taking n as 6 as an example.
Specifically, first, a first antireflection film layer 22 is formed on the second nanowire layer 32 in the same manner as in step S20, then a via hole is formed in the first antireflection film layer 22 in the same manner as in step S30, and finally a third nanowire layer 33 is formed on the first antireflection film layer 22 in the same manner as in step S40, where the via hole is filled with the third nanowire layer 33 and covers the first antireflection film layer 22.
Repeating the above steps, a first antireflection film layer 23, a fourth nanowire layer 34, a first antireflection film layer 24, a fifth nanowire layer 35, a first antireflection film layer 25, and a sixth nanowire layer 36 are formed in sequence. That is, multiple anti-reflection film layers and metal nanowire layers are stacked on the substrate, and each metal nanowire layer is electrically connected to the next metal nanowire layer by filling a through hole formed in the anti-reflection film layer, for example, a through hole is formed in the first anti-reflection film layer 25, and the sixth metal nanowire layer 36 is filled in the through hole and electrically connected to the fifth metal nanowire layer 35.
As described above, the conductive film structure includes a plurality of anti-reflection film layers and a plurality of metal nanowire layers stacked on a substrate, the metal nanowire layers of each layer are electrically connected to each other, and the thickness of each layer is reduced compared to the total required metal nanowire layer, so that the reflected light of the metal nanowire layers can be reduced, and the haze of the conductive film structure can be further reduced. Of course, the specific arrangement of several layers of the nanowire layer may be determined by factors such as the thickness and resistance of the actual nanowire layer.
Accordingly, the present invention further provides a touch panel, as shown in fig. 7, including a substrate 10 and a conductive film formed on the substrate 10, wherein the conductive film has the conductive film structure as described above. Preferably, the touch panel further includes: and the second antireflection film layer 22 is located between the substrate 10 and the conductive film structure, so that the reflected light of the nano metal wire layer can be further reduced, and the haze of the conductive film structure is reduced.
The touch panel can be used for mobile terminals such as mobile phones, game machines and tablet computers, and can also be used for various electronic products such as notebook computers, desktop computers, public information inquiry equipment and multimedia teaching equipment.
Correspondingly, the invention further provides a display screen, and the display screen comprises the touch panel.
In summary, in the conductive film structure, the manufacturing method thereof, the touch panel and the display screen provided by the invention, the total nanowire layer is divided into at least two nanowire layers by the first antireflection film layer, and the thickness of each nanowire layer is reduced relative to the total nanowire layer, so that the reflected light of the nanowire layer is reduced, and the haze of the conductive film structure is finally reduced. And through the arrangement of the first antireflection film layer, transmitted light is increased, and reflected light of the nanometer metal wire layer is further reduced, so that the haze of the conductive film structure is reduced.
Furthermore, a second antireflection film layer is arranged between the first nanowire layer and the substrate, so that the total reflected light of the nanowire layer can be further reduced, and the haze of the conductive film structure is reduced.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (9)
1. A conductive film structure used as a touch electrode material, comprising:
at least two layers of metal nanowire layers are arranged in a stacked mode;
the first antireflection film layer is arranged between two adjacent nanometer metal wire layers, and a plurality of through holes are formed in the first antireflection film layer; and the two adjacent layers of nano metal wire layers are conducted through the through holes, and the thickness of each layer of first antireflection film layer is equal to that of the quarter-wave plate.
2. The conductive film structure used as a touch electrode material according to claim 1, wherein the conductive film structure comprises 2-6 layers of the nano-metal wire; the first antireflection film layer is arranged between any two adjacent nanometer metal wire layers.
3. The conductive film structure as touch electrode material according to claim 1, wherein the total thickness of the conductive film structure is 10nm to 200 nm.
4. The conductive film structure as touch electrode material according to claim 1, wherein the refractive index of each first antireflection film layer is between 1.0 and 1.5.
5. The conductive film structure as claimed in any of claims 1 to 3, wherein all the nanowire layers are made of silver nanowires, and all the anti-reflection film layers are made of silicon oxide.
6. A manufacturing method of a conductive film structure used as a touch electrode material is characterized in that the forming method comprises the following steps:
forming a first nanowire layer;
forming a first antireflection film layer, wherein the first antireflection film layer covers the first nano metal wire layer, and the thickness of the first antireflection film layer is equal to that of the quarter-wave plate;
forming a plurality of through holes, wherein the through holes are positioned in the first antireflection film layer and expose the first nanometer metal wire layer; and the number of the first and second groups,
and forming a second nano metal wire layer, wherein the second nano metal wire layer covers the first antireflection film layer and is communicated with the first nano metal wire layer through the through hole.
7. A touch panel, comprising:
a substrate; and
a conductive film formed on the substrate, the conductive film having the conductive film structure according to any one of claims 1 to 5.
8. The touch panel of claim 7, further comprising: a second antireflective coating layer between the substrate and the conductive film structure.
9. A display screen, characterized in that the display screen comprises the touch panel of claim 7 or 8.
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| CN204102115U (en) * | 2013-09-12 | 2015-01-14 | 阿尔卑斯电气株式会社 | Input media |
| CN104699333A (en) * | 2013-12-10 | 2015-06-10 | 恒颢科技股份有限公司 | Touch panel with grid-shaped alloy touch electrode |
| CN105425992A (en) * | 2014-09-17 | 2016-03-23 | 宸鸿科技(厦门)有限公司 | Touch panel and touch display module |
| CN105487727A (en) * | 2014-09-17 | 2016-04-13 | 宸鸿科技(厦门)有限公司 | Capacitive touch panel and manufacturing method thereof |
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| KR102251775B1 (en) * | 2014-07-18 | 2021-05-12 | 삼성전자주식회사 | Electrode structure and touch detecting sensor using the same |
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| CN204102115U (en) * | 2013-09-12 | 2015-01-14 | 阿尔卑斯电气株式会社 | Input media |
| CN104699333A (en) * | 2013-12-10 | 2015-06-10 | 恒颢科技股份有限公司 | Touch panel with grid-shaped alloy touch electrode |
| CN105425992A (en) * | 2014-09-17 | 2016-03-23 | 宸鸿科技(厦门)有限公司 | Touch panel and touch display module |
| CN105487727A (en) * | 2014-09-17 | 2016-04-13 | 宸鸿科技(厦门)有限公司 | Capacitive touch panel and manufacturing method thereof |
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Application publication date: 20180914 Assignee: Bazhou Yungu Electronic Technology Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd Assignor: The valley (Guan) Technology Co. Ltd. Contract record no.: X2019990000155 Denomination of invention: Conductive film structure and manufacturing method thereof, touch panel and display screen License type: Common License Record date: 20191030 |
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