CN108499963A - A kind of electronic material ground and cleaned method - Google Patents
A kind of electronic material ground and cleaned method Download PDFInfo
- Publication number
- CN108499963A CN108499963A CN201710353019.8A CN201710353019A CN108499963A CN 108499963 A CN108499963 A CN 108499963A CN 201710353019 A CN201710353019 A CN 201710353019A CN 108499963 A CN108499963 A CN 108499963A
- Authority
- CN
- China
- Prior art keywords
- electronic material
- lapping liquid
- cleaning
- material ground
- cleaning solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a kind of electronic material ground and cleaned methods, including following method：a：Proportioned neutralization salt and abrasive grains be mixed, lapping liquid is made；b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；d：At 40 60 DEG C, electronic material is initially positioned in lapping liquid and stands 5 25min, be placed in cleaning solution and clean 10 40min, and wash cycles are implemented with regard to additional clean liquid every 1 3h.The present invention is statically placed in lapping liquid before washing, can be ground peeling to the spot for being adsorbed on material surface, and convenient for cleaning, and cleaning performance is notable, non-corrosive, environmentally protective.
Description
Technical field
The present invention relates to electronic material cleaning technique fields, more particularly, to a kind of electronic material ground and cleaned method.
Background technology
In the process of electronic material, the requirement to electronic material surface cleanliness is also relatively stringenter, the dirt on surface
Dye object will seriously affect the physical property and electrical properties of electronic material.Each procedure exists electronic material in production
Potential pollution, may all lead to the generation of defect and the failure of device.Device is will have a direct impact on if cleaning performance is bad
Yield rate, Performance And Reliability.Currently used traditional detergent can have certain corrosiveness to material after cleaning,
And cleaning performance is bad, it is difficult to meet high request of the electronics industry to cleaning agent.
Therefore, above-mentioned in order to solve the problems, such as, the present invention provides a kind of new technical solutions.
Invention content
The object of the present invention is to provide a kind of electronic material ground and cleaned methods.
Used technical solution is the present invention in view of the above technical defects：
A kind of electronic material ground and cleaned method, including following method：
a：Proportioned neutralization salt and abrasive grains be mixed, lapping liquid is made；
b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；
c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；
d：At 40-60 DEG C, electronic material is initially positioned in lapping liquid and stands 5-25min, is placed in cleaning solution and clean
10-40min, and wash cycles are implemented with regard to additional clean liquid every 1-3h.
Further, abrasive grains described in step a are one in colloidal silicon dioxide, cerium oxide, aluminium oxide and diamond
Kind or more than one combination.
Further, the ratio that salt and abrasive grains are neutralized described in step a is 1:100-1000.
Further, preservative is added in the lapping liquid and in cleaning solution.
The beneficial effects of the invention are as follows：The present invention is statically placed in lapping liquid before washing, can be to being adsorbed on material table
The spot in face is ground peeling, and convenient for cleaning, and cleaning performance is notable, non-corrosive, environmentally protective.
Specific implementation mode
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be further described, the embodiment
It is only used for explaining the present invention, not restrict the protection scope of the present invention.
Embodiment 1
A kind of electronic material ground and cleaned method, including following method：
a：Salt is neutralized by 1 part and 100 parts of silica be mixed and lapping liquid is made, and preservative is added in lapping liquid；
b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；
c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；
d：At 40 DEG C, electronic material is initially positioned in lapping liquid and stands 5min, is placed in cleaning solution and clean 10min,
And wash cycles are implemented with regard to additional clean liquid every 1h.
Embodiment 2
A kind of electronic material ground and cleaned method, including following method：
a：Salt is neutralized by 1 part and 500 parts of cerium oxide be mixed and lapping liquid is made, and preservative is added in lapping liquid；
b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；
c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；
d：At 50 DEG C, electronic material is initially positioned in lapping liquid and stands 15min, is placed in cleaning solution and clean 25min,
And wash cycles are implemented with regard to additional clean liquid every 2h.
Embodiment 3
A kind of electronic material ground and cleaned method, including following method：
a：Salt is neutralized by 1 part and 1000 parts of aluminium oxide be mixed and lapping liquid is made, and preservative is added in lapping liquid；
b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；
c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；
d：At 60 DEG C, electronic material is initially positioned in lapping liquid and stands 25min, is placed in cleaning solution and clean 40min,
And wash cycles are implemented with regard to additional clean liquid every 3h.
The beneficial effects of the invention are as follows：The present invention is statically placed in lapping liquid before washing, can be to being adsorbed on material table
The spot in face is ground peeling, and convenient for cleaning, and cleaning performance is notable, non-corrosive, environmentally protective.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of electronic material ground and cleaned method, it is characterised in that：Including following method：
a：Proportioned neutralization salt and abrasive grains be mixed, lapping liquid is made；
b：Nonionic surfactant and portions of de-ionized water are added in cleaning agent system and are stirred mixing；
c：It adds pH adjusting agent and carries out acid-base value adjusting, be used in combination deionized water to be diluted and cleaning solution is made；
d：At 40-60 DEG C, electronic material is initially positioned in lapping liquid and stands 5-25min, is placed in cleaning solution and clean
10-40min, and wash cycles are implemented with regard to additional clean liquid every 1-3h.
2. a kind of electronic material ground and cleaned method according to claim 1, it is characterised in that：Grinding described in step a
Grain is one or more kinds of combinations in colloidal silicon dioxide, cerium oxide, aluminium oxide and diamond.
3. a kind of electronic material ground and cleaned method according to claim 1, it is characterised in that：Salt is neutralized described in step a
Ratio with abrasive grains is 1:100-1000.
4. a kind of electronic material ground and cleaned method according to claim 1, it is characterised in that：It is in the lapping liquid and clear
Preservative is added in washing lotion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710353019.8A CN108499963A (en) | 2017-05-18 | 2017-05-18 | A kind of electronic material ground and cleaned method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710353019.8A CN108499963A (en) | 2017-05-18 | 2017-05-18 | A kind of electronic material ground and cleaned method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108499963A true CN108499963A (en) | 2018-09-07 |
Family
ID=63373819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710353019.8A Pending CN108499963A (en) | 2017-05-18 | 2017-05-18 | A kind of electronic material ground and cleaned method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108499963A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1913102A (en) * | 2005-08-10 | 2007-02-14 | 株式会社上睦可 | Silicon wafer cleaning method |
| WO2009035089A1 (en) * | 2007-09-14 | 2009-03-19 | Sanyo Chemical Industries, Ltd. | Cleaning agent for electronic material |
| JP2014141667A (en) * | 2012-12-27 | 2014-08-07 | Sanyo Chem Ind Ltd | Polishing liquid for electronic material |
| CN104046990A (en) * | 2014-06-23 | 2014-09-17 | 梧州恒声电子科技有限公司 | Copper polishing method |
| CN105051145A (en) * | 2013-03-19 | 2015-11-11 | 福吉米株式会社 | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
-
2017
- 2017-05-18 CN CN201710353019.8A patent/CN108499963A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1913102A (en) * | 2005-08-10 | 2007-02-14 | 株式会社上睦可 | Silicon wafer cleaning method |
| WO2009035089A1 (en) * | 2007-09-14 | 2009-03-19 | Sanyo Chemical Industries, Ltd. | Cleaning agent for electronic material |
| CN101848987A (en) * | 2007-09-14 | 2010-09-29 | 三洋化成工业株式会社 | Cleaning agent for electronic material |
| JP2014141667A (en) * | 2012-12-27 | 2014-08-07 | Sanyo Chem Ind Ltd | Polishing liquid for electronic material |
| CN105051145A (en) * | 2013-03-19 | 2015-11-11 | 福吉米株式会社 | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
| CN104046990A (en) * | 2014-06-23 | 2014-09-17 | 梧州恒声电子科技有限公司 | Copper polishing method |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180907 |