CN109500663A - A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses - Google Patents
A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses Download PDFInfo
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- CN109500663A CN109500663A CN201910015754.7A CN201910015754A CN109500663A CN 109500663 A CN109500663 A CN 109500663A CN 201910015754 A CN201910015754 A CN 201910015754A CN 109500663 A CN109500663 A CN 109500663A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 230000003746 surface roughness Effects 0.000 title claims abstract description 26
- 238000007517 polishing process Methods 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 108
- 238000004018 waxing Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 31
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 22
- 239000004744 fabric Substances 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000012895 dilution Substances 0.000 claims description 11
- 238000010790 dilution Methods 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 8
- 230000002000 scavenging effect Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 235000019592 roughness Nutrition 0.000 abstract description 4
- 230000007812 deficiency Effects 0.000 abstract description 2
- 239000000686 essence Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses, polishing process includes the following steps: to carry out waxing operation to silication corruption piece, obtains waxing silicon wafer；Waxing silicon wafer is polished according to the sequence of rough polishing, first time finishing polish, second of finishing polish, obtains polished silicon slice；Wax is carried out to polished silicon slice to clean, and is obtained silicon polished.Overcome the deficiencies in the prior art of the present invention, reduces polished silicon wafer surface roughness, and roughness can be reduced to 0.0001um or less.
Description
Technical field
The invention belongs to silicon polished production fields, more particularly, to a kind of 8 inches of silicon polished processing of surface polishing.
Background technique
In recent years, with the high speed development of semicon industry and fierce market competition, the integrated level of semiconductor devices is not
Disconnected to improve, feature sizes constantly reduce, and the requirement to the control of original silicon material and processing quality is also increasingly harsher；With silicon
Material diameter becomes larger and the range of the controls such as silicon chip surface flatness, microroughness will be smaller and smaller, and this requires semiconductor devices
The silicon polished level with higher in the technical indicator of substrate material used in part, and the country is on silicon polished surface at present
It is had a certain gap in the control of roughness with international most advanced level, it would be highly desirable to improve.
Surface roughness occurs mainly in silicon wafer polishing and polished silicon wafer cleaning process, therefore polishing and cleaning process are exactly
Prepare the key of silicon polished section with low-roughness concentration.
Summary of the invention
In view of this, the present invention is directed to propose a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses and its
Using overcome the deficiencies in the prior art reduces polished silicon wafer surface roughness, and roughness can be reduced to 0.0001um or less.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses, includes the following steps:
Step 1: waxing operation being carried out to silication corruption piece, obtains waxing silicon wafer；
Step 2: waxing silicon wafer being polished according to the sequence of rough polishing, first time finishing polish, second of finishing polish, is obtained
To polished silicon slice；
Step 3: wax being carried out to polished silicon slice and is cleaned, is obtained silicon polished.
Preferably, in rough polishing step, using rough polishing cloth, diluted rough polishing liquid, flow 8-12L/min, polish pressure
For 250-400g/cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 10-14min；Preferably, rough polishing step
In, using rough polishing cloth, diluted rough polishing liquid, flow 9.5-10.5L/min, polish pressure 300g/cm2, polishing machine price fixing
Revolving speed is 35rpm, polishing time 12min.
Preferably, diluted rough polishing liquid is to dilute rough polishing liquid, dilution ratio 1:20-1:40 by pure water；Preferably, dilute
The rough polishing liquid released is to dilute rough polishing liquid, dilution ratio 1:30 by pure water.
Preferably, in first time finishing polish step, cloth, diluted fine polishing liquid, flow 1-4L/min, polishing are thrown using essence
Pressure is 100-300g/cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 7-10min；Preferably, smart for the first time
In polishing step, cloth, diluted fine polishing liquid, flow 2.5-3.5L/min, polish pressure 200g/cm are thrown using essence2, polishing
Machine price fixing revolving speed is 25rpm, polishing time 8min.
Preferably, in second of finishing polish step, cloth, diluted fine polishing liquid, flow 1-4L/min, polishing are thrown using essence
Pressure is 50-200g/cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 7-10min；Preferably, second of essence
In polishing step, cloth, diluted fine polishing liquid, flow 2.5-3.5L/min, polish pressure 100g/cm are thrown using essence2, polishing
Machine price fixing revolving speed is 25rpm, polishing time 8min.
Preferably, diluted fine polishing liquid is to dilute fine polishing liquid, dilution ratio 1:20-1:40 by pure water；Preferably, dilute
The fine polishing liquid released is to dilute fine polishing liquid, dilution ratio 1:30 by pure water.
Preferably, remove wax cleaning step successively and sequentially include: SC-1 cleaning, pure water cleaning, SC-1 cleaning, pure water cleaning,
Pure water cleaning, SC-2 cleaning, pure water cleaning, pure water cleaning, IR drying.
Preferably, wherein SC-1 is cleaned, and cleaning temperature is 50 DEG C, and scavenging period 5min, SC-1 medical fluid includes such as lower body
The component of product ratio: ammonium hydroxide: hydrogen peroxide: pure water=1:1:30, wherein ammonia concn is 28-30%, hydrogen peroxide concentration 30-
32%, pure water resistivity > 18M Ω .CM；Preferably, wherein SC-2 is cleaned, and cleaning temperature is room temperature, scavenging period 5min,
SC-2 medical fluid includes the component of following volume ratio: hydrochloric acid: hydrogen peroxide: pure water=1:1:25, and wherein concentration of hydrochloric acid is 36-
38%, hydrogen peroxide concentration 30-32%, pure water resistivity > 18M Ω .CM.
Preferably, what is obtained is silicon polished, and surface roughness is less than 0.0001um；Preferably, polishing removal amount is 18-
20um。
A kind of polishing process application reducing by 8 inches of silicon polished surface roughnesses, is applied to power device, integrated circuit
Device, discrete device, IGBT device monocrystalline silicon buffing sheet polishing in.
Compared with the existing technology, a kind of polishing process reducing by 8 inches of silicon polished surface roughnesses of the present invention
And its application has the advantage that
(1) polishing method that the present invention is thrown using rough polishing and two step essences, rough polishing can effectively remove surface damage layer,
Reduce surface defect；The repair that two step essences are thrown can effectively remove the micro-damage of silicon chip surface after rough polishing, and it is thick to reduce surface
Rugosity；
(2) polishing fluid dilution ratio used in is high, and pH value is relatively low, can reduce polishing fluid to silicon wafer polishing surface
Corrosion；
(3) using the cleaning process of low concentration, low temperature after polishing, corruption of the cleaning solution to silicon wafer polishing surface can be reduced
Erosion reduces the risk that silicon chip surface roughness is deteriorated；
(4) silicon chip surface that present invention processing obtains is smooth, and roughness can be reduced to 0.0001um or less；
(5) present invention controls silicon wafer polishing removal amount in 18-20um, can produce in batches, and quality is stablized.
Specific embodiment
In addition to being defined, technical term used in following embodiment has universal with those skilled in the art of the invention
The identical meanings of understanding.Test reagent used in following embodiment is unless otherwise specified conventional biochemical reagent；It is described
Experimental method is unless otherwise specified conventional method.
Below with reference to embodiment, the present invention will be described in detail.
Embodiment
The silicon polished example for having wax polishing process is gently mixed to the vertical pulling of 8 inches of 725um thickness to be described in detail:
Silicon wafer: 8 inches of vertical pullings gently mix silication corruption piece, crystal orientation<100>, resistivity 8-18 Ω .cm, thickness 744- before polishing
746um, quantity 300；
Process equipment: single side has wax polishing system, removes wax cleaning machine；
Auxiliary material: rough polishing solution: NP6504；Precise polishing solution: GLANZOX3105；Diluted rough polishing solution (dilution volume
Ratio 1:30), diluted precise polishing solution (dilution volume ratio 1:30), rough polishing cloth, precision polishing cloth, ammonium hydroxide (concentration
29wt%), hydrogen peroxide (concentration 32wt%), hydrochloric acid (concentration 36wt%), pure water: pure water resistivity > 18M Ω .CM etc.；
Polishing process are as follows:
Step 1: waxing operation being carried out to silication corruption piece, obtains waxing silicon wafer；Certainly by chip mounter by clean silication corruption piece
Dynamic to carry out waxing patch operation to silication corruption piece, ceramic disk patch terminates to be automatically sent to prepare polishing on polishing machine；
Step 2: waxing silicon wafer being polished according to the sequence of rough polishing, first time finishing polish, second of finishing polish, is obtained
To polished silicon slice；After polishing, shovel piece is carried out to polished silicon slice on unloading platform, silicon wafer is removed from ceramic disk
Step 3: wax being carried out to polished silicon slice and is cleaned, is obtained silicon polished.
Step 4: silicon polished after cleaning is detected；Whether there is or not road plan, chippings etc. on visual inspection surface under major light no
It is good.
In rough polishing step, using rough polishing cloth, diluted rough polishing liquid, flow 10L/min, polish pressure 300g/
cm2, polishing machine price fixing revolving speed is 35rpm, polishing time 12min.
In first time finishing polish step, cloth is thrown using essence, diluted fine polishing liquid, flow 3L/min, polish pressure is
200g/cm2, polishing machine price fixing revolving speed is 25rpm, polishing time 8min.
In second of finishing polish step, cloth is thrown using essence, diluted fine polishing liquid, flow 3L/min, polish pressure is
100g/cm2, polishing machine price fixing revolving speed is 25rpm, polishing time 8min.
Removing wax cleaning step successively sequentially includes: SC-1 cleaning, pure water cleaning, SC-1 is cleaned, pure water cleans, pure water is clear
It washes, SC-2 cleaning, pure water cleaning, pure water cleaning, IR drying.
Wherein SC-1 is cleaned, and cleaning temperature is 50 DEG C, and scavenging period 5min, SC-1 medical fluid includes following volume ratio
Component: ammonium hydroxide: hydrogen peroxide: pure water=1:1:30；Wherein SC-2 is cleaned, and cleaning temperature is room temperature, scavenging period 5min, SC-2
Medical fluid includes the component of following volume ratio: hydrochloric acid: hydrogen peroxide: pure water=1:1:25.
Geometric parameter (thickness, TTV, TIR, STIR etc.) is tested with ADE9600；Examine surface clean with particle detector SP1
Cleanliness；Burnishing surface surface roughness is tested using Chapman microscope；
Technical effect detection: it using the monocrystalline silicon buffing sheet of above-mentioned technique processing, is detected through microscope, surface roughness is equal
Less than 0.0001um, reach world-class levels；Silicon wafer after polishing tests other parameters index, is higher than original process
Level, comprehensive yield reach 96% or more；The testing result shows that this technique is able to achieve the silicon polished amount of low surface roughness
It produces.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses, characterized by the following steps:
Step 1: waxing operation being carried out to silication corruption piece, obtains waxing silicon wafer；
Step 2: waxing silicon wafer being polished according to the sequence of rough polishing, first time finishing polish, second of finishing polish, is thrown
Light silicon wafer；
Step 3: wax being carried out to polished silicon slice and is cleaned, is obtained silicon polished.
2. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 1, feature exist
In: in rough polishing step, using rough polishing cloth, diluted rough polishing liquid, flow 8-12L/min, polish pressure 250-400g/
cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 10-14min；Preferably, in rough polishing step, using rough polishing
Cloth, diluted rough polishing liquid, flow 9.5-10.5L/min, polish pressure 300g/cm2, polishing machine price fixing revolving speed is 35rpm,
Polishing time is 12min.
3. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 2, feature exist
In: diluted rough polishing liquid is to dilute rough polishing liquid, dilution ratio 1:20-1:40 by pure water；Preferably, diluted rough polishing liquid is
Rough polishing liquid, dilution ratio 1:30 are diluted by pure water.
4. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 1, feature exist
In: in first time finishing polish step, cloth, diluted fine polishing liquid, flow 1-4L/min, polish pressure 100- are thrown using essence
300g/cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 7-10min；Preferably, first time finishing polish step
In, cloth, diluted fine polishing liquid, flow 2.5-3.5L/min, polish pressure 200g/cm are thrown using essence2, polishing machine price fixing turn
Speed is 25rpm, polishing time 8min.
5. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses as claimed in claim 4, it is characterised in that: the
In secondary fine polishing step, cloth, diluted fine polishing liquid, flow 1-4L/min, polish pressure 50-200g/ are thrown using essence
cm2, polishing machine price fixing revolving speed is 20-40rpm, polishing time 7-10min；Preferably, it in second of finishing polish step, uses
Essence throws cloth, diluted fine polishing liquid, flow 2.5-3.5L/min, polish pressure 100g/cm2, polishing machine price fixing revolving speed is
25rpm, polishing time 8min.
6. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 5, feature exist
In: diluted fine polishing liquid is to dilute fine polishing liquid, dilution ratio 1:20-1:40 by pure water；Preferably, diluted fine polishing liquid is
Fine polishing liquid, dilution ratio 1:30 are diluted by pure water.
7. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 1, feature exist
In: removing wax cleaning step successively sequentially includes: SC-1 cleaning, pure water cleaning, SC-1 cleaning, pure water cleaning, pure water cleaning, SC-2
Cleaning, pure water cleaning, pure water cleaning, IR drying.
8. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses as claimed in claim 7, it is characterised in that: its
Middle SC-1 cleaning, cleaning temperature are 50 DEG C, and scavenging period 5min, SC-1 medical fluid includes the component of following volume ratio: ammonium hydroxide:
Hydrogen peroxide: pure water=1:1:30, wherein ammonia concn is 28-30%, hydrogen peroxide concentration 30-32%, pure water resistivity > 18M
Ω.CM；Preferably, wherein SC-2 is cleaned, and cleaning temperature is room temperature, and scavenging period 5min, SC-2 medical fluid includes such as lower volume
The component of ratio: hydrochloric acid: hydrogen peroxide: pure water=1:1:25, wherein concentration of hydrochloric acid is 36-38%, hydrogen peroxide concentration 30-
32%, pure water resistivity > 18M Ω .CM.
9. a kind of polishing process for reducing by 8 inches of silicon polished surface roughnesses according to claim 1, feature exist
In: what is obtained is silicon polished, and surface roughness is less than 0.0001um；Preferably, polishing removal amount is 18-20um.
10. a kind of -9 described in any item polishing processes for reducing by 8 inches of silicon polished surface roughnesses according to claim 1 are answered
With, it is characterised in that: applied to power device, integrated circuit device, discrete device, IGBT device monocrystalline silicon buffing sheet throwing
In light processing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910015754.7A CN109500663A (en) | 2019-01-08 | 2019-01-08 | A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses |
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| CN201910015754.7A CN109500663A (en) | 2019-01-08 | 2019-01-08 | A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN111659665A (en) * | 2020-05-29 | 2020-09-15 | 徐州鑫晶半导体科技有限公司 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
| CN111681944A (en) * | 2020-05-11 | 2020-09-18 | 中环领先半导体材料有限公司 | Cleaning process for cleaning semiconductor silicon wafer of 200mm |
| CN111690987A (en) * | 2020-07-19 | 2020-09-22 | 湖州飞鹿新能源科技有限公司 | Crystal silicon surface fine polishing method based on alkaline polishing gel |
| CN112466998A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN112975578A (en) * | 2019-12-12 | 2021-06-18 | 有研半导体材料有限公司 | Polishing method for improving surface roughness of silicon polished wafer |
| CN113192823A (en) * | 2021-04-27 | 2021-07-30 | 麦斯克电子材料股份有限公司 | Regeneration processing method of substrate slice after SOI bonding process |
| CN113808918A (en) * | 2021-09-14 | 2021-12-17 | 万华化学集团电子材料有限公司 | A kind of preparation process of high cleanliness polishing sheet |
| CN113829221A (en) * | 2021-09-14 | 2021-12-24 | 上海中欣晶圆半导体科技有限公司 | A method for improving the poor polishing corrugation of thin slices |
| CN113927377A (en) * | 2021-10-21 | 2022-01-14 | 中环领先半导体材料有限公司 | Polishing process for improving surface roughness of silicon wafer |
| CN114378645A (en) * | 2020-10-16 | 2022-04-22 | 万华化学集团电子材料有限公司 | Preparation process of high-flatness polished wafer |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
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| CN112975578B (en) * | 2019-12-12 | 2022-06-24 | 有研半导体硅材料股份公司 | Polishing method for improving surface roughness of silicon polished wafer |
| CN111681944A (en) * | 2020-05-11 | 2020-09-18 | 中环领先半导体材料有限公司 | Cleaning process for cleaning semiconductor silicon wafer of 200mm |
| CN111659665B (en) * | 2020-05-29 | 2022-02-01 | 徐州鑫晶半导体科技有限公司 | Silicon wafer cleaning method and silicon wafer cleaning equipment |
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| CN111690987A (en) * | 2020-07-19 | 2020-09-22 | 湖州飞鹿新能源科技有限公司 | Crystal silicon surface fine polishing method based on alkaline polishing gel |
| CN114378645A (en) * | 2020-10-16 | 2022-04-22 | 万华化学集团电子材料有限公司 | Preparation process of high-flatness polished wafer |
| CN112466998A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN112466998B (en) * | 2020-12-09 | 2022-08-12 | 中国电子科技集团公司第四十六研究所 | A method of manufacturing a four-inch 80-micron gallium arsenide double-polished wafer |
| CN113192823A (en) * | 2021-04-27 | 2021-07-30 | 麦斯克电子材料股份有限公司 | Regeneration processing method of substrate slice after SOI bonding process |
| CN113192823B (en) * | 2021-04-27 | 2022-06-21 | 麦斯克电子材料股份有限公司 | Regeneration processing method of substrate slice after SOI bonding process |
| CN113829221A (en) * | 2021-09-14 | 2021-12-24 | 上海中欣晶圆半导体科技有限公司 | A method for improving the poor polishing corrugation of thin slices |
| CN113808918A (en) * | 2021-09-14 | 2021-12-17 | 万华化学集团电子材料有限公司 | A kind of preparation process of high cleanliness polishing sheet |
| CN113927377A (en) * | 2021-10-21 | 2022-01-14 | 中环领先半导体材料有限公司 | Polishing process for improving surface roughness of silicon wafer |
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