CN108448376A - Small-Sized Pulsed green (light) laser - Google Patents
Small-Sized Pulsed green (light) laser Download PDFInfo
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- CN108448376A CN108448376A CN201810324471.6A CN201810324471A CN108448376A CN 108448376 A CN108448376 A CN 108448376A CN 201810324471 A CN201810324471 A CN 201810324471A CN 108448376 A CN108448376 A CN 108448376A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of Small-Sized Pulsed green (light) lasers, including are from left to right arranged in order LD laser diodes, the Nd of setting:YVO4Crystal, saturable absorbing mirror and PPLN crystal, LD laser diodes, Nd:YVO4On the same central axis that the center of crystal, saturable absorbing mirror and PPLN crystal is located in the same horizontal plane；Nd:YVO4It is provided with TEC below crystal1Temperature controller, for controlling Nd:YVO4The temperature of crystal；It is provided with TEC below PPLN crystal2Temperature controller, the temperature for controlling PPLN crystal.The Small-Sized Pulsed green (light) laser recovery time is fast, saturation luminous intensity is low, operating spectral range is wide and preparation method is simple, at low cost, chemical stability is good, substantially increases output pulse power and repetition rate, avoids walk-off effect；Meanwhile it is simple and compact for structure, it is at low cost, easily operated, convenient for promoting the use of without lens and speculum.
Description
Technical Field
The invention relates to a miniaturized pulse green laser.
Background
The high-peak-power and high-stability pulse green laser has wide application value and prospect in the fields of laser medical treatment, laser precision machining, spectral analysis and the like.
There are two ways to generate pulsed laser light: transfer Q and mode locking, mode locking technique has following advantage compared with transfer Q technique: on one hand, the output of T watt level or even higher peak power can be obtained, and on the other hand, the output of narrower pulse width (the level of mu s-ns in Q-switching technology and the level of ps-fs in mode locking technology) can be obtained. The mode locking technology has the working modes of active mode locking, passive mode locking and self mode locking. Active mode locking can be divided into phase modulation mode locking and amplitude modulation mode locking, however, the two mode locking modulate light waves similarly, a series of wave bands exist, and mode locking is unstable. However, since the noise pulse of the self-mode-locked laser cannot reach the self-starting threshold of the self-mode-locked laser, additional measures are often manually taken to start the self-mode-locked laser. The passive mode locking is realized by adding a saturable absorber made of a saturable absorption material into a laser resonant cavity and utilizing the unique nonlinear optical characteristic of the material to generate pulse laser output. The existing commonly used saturable absorber has the defects of poor stability, narrow working wavelength range, complex preparation process and the like.
The current schemes for generating pulsed laser output in the green light are broadly divided into two categories: (1) and (3) outputting pulse laser by adopting a near-infrared pulse laser, and performing frequency multiplication to obtain green light pulse laser output after the pulse laser passes through a wavelength conversion element. The method features simple structure, easy frequency doubling and high conversion frequency, but the output green laser has wide line width, poor wavelength stability and low conversion rate. (2) Rare earth ions such as Nd3+, Er3+ and the like are used for activating and outputting near-infrared continuous laser, and then the near-infrared continuous laser passes through a Q-switching or mode-locking device, and green pulse laser is realized by using a wavelength conversion element. This method is structurally complicated, but can achieve a narrow pulse width high beam quality laser output.
Therefore, it is urgently needed to provide a miniaturized pulse green laser capable of overcoming the disadvantages of the existing pulse green laser, such as wide output pulse, low peak power, low conversion efficiency and complex laser system.
Disclosure of Invention
The invention aims to provide a miniaturized pulse green laser which has the advantages of short recovery time, low saturation light intensity, wide working spectrum range, simple preparation method, low cost and good chemical stability, greatly improves output pulse power and repetition frequency, and avoids a walk-off effect; meanwhile, the structure is simple and compact, a lens and a reflector are not needed, the cost is low, the operation is easy, and the popularization and the use are convenient.
In order to achieve the purpose, the invention provides a miniaturized pulse green laser which comprises LD laser diodes, Nd and YVO which are sequentially arranged from left to right4Crystal, saturable absorber mirror, PPLN crystal, LD laser diode, Nd, YVO4The central positions of the crystal, the saturable absorption mirror and the PPLN crystal are positioned on the same central axis in the same horizontal plane; wherein,
YVO is the Nd4A TEC is arranged below the crystal1A temperature controller for controlling the Nd: YVO4The temperature of the crystal;
a TEC is arranged below the PPLN crystal2A temperature controller for controlling the temperature of the PPLN crystal.
Preferably, the maximum output power of the LD laser diode is 5W, and the center wavelength is 808 nm.
Preferably, the Nd is YVO4Cutting the crystal by using an a axis, wherein the size of the crystal is 3mm multiplied by 2 mm; wherein,
Nd3+the ion doping concentration is 1 percent, and the Nd is YVO4And the left end face of the crystal is plated with an antireflection film of 808nm and a high-reflection film of 1064nm, and the right end face of the crystal is plated with an antireflection film of 1064nm and a high-reflection film of 808 nm.
Preferably, the TEC1YVO is controlled by a temperature controller4The temperature of the crystal is 24-26 ℃, and the control precision is 0.1 ℃.
Preferably, the substrate material of the saturable absorber mirror is K9 glass, and the left end face and the right end face are both plated with antireflection films of 1064 nm.
Preferably, the PPLN crystal is a periodically poled crystal, 20mm long, 10mm wide, 1mm thick, and has a poling period of 30 μm.
Preferably, a 1064nm antireflection film and a 532nm high-reflection film are plated on the left end face of the PPLN crystal, and a 1064nm high-reflection film and a 532nm antireflection film are plated on the right end face of the PPLN crystal.
Preferably, the TEC2The temperature controller controls the temperature of the PPLN crystal to be 27-29 ℃ and the control precision is 0.1 ℃.
According to the technical scheme, the invention utilizes an LD laser diode pump Nd: YVO with 808nm4The crystal generates 1064nm continuous laser, the unique nonlinear optical characteristic of the crystal is utilized by the saturable absorption mirror of the carbon nano tube to obtain 1064nm pulse laser as the pumping light of the green laser, and the pumping light passes through the PPLNThe frequency doubling crystal generates green light pulse laser output. The device accurately controls Nd: YVO through a temperature controller4The temperature of the crystal and the PPLN crystal, so as to avoid the influence of the heat effect generated by the crystal under long-time work on the working efficiency of the whole laser system. The saturable absorption mirror prepared by the single-walled carbon nanotube has the characteristics of short recovery time (less than 1ps), low saturation light intensity, wide working spectrum range, simple preparation method, low cost and good chemical stability; the ultra-short pulse laser output of ps-fs magnitude can be realized, and the output pulse power and repetition frequency are greatly improved; the continuous light is used for directly generating pulse laser to pump the PPLN crystal to obtain green pulse laser output, so that the walk-off effect is avoided; in addition, the invention has the characteristics of simple and compact structure, no need of lens and reflector, low cost, easy operation and convenient popularization and use.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a miniaturized pulse green laser according to an embodiment of the present invention.
Description of the reference numerals
1-LD laser diode 2-TEC1Temperature controller
3-Nd:YVO4Crystal 4-saturable absorption mirror
5-TEC2Temperature controller 6-PPLN crystal
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words "upper, lower, left, right" and the like included in the terms merely represent the orientation of the terms in a conventional use state or are colloquially understood by those skilled in the art, and should not be construed as limiting the terms.
Referring to fig. 1, the invention provides a miniaturized pulse green laser, comprising LD laser diodes 1, Nd: YVO arranged in sequence from left to right4A crystal 3, a saturable absorber mirror 4 and a PPLN crystal 6, the LD laser diode 1, the Nd: YVO4The central positions of the crystal 3, the saturable absorption mirror 4 and the PPLN crystal 6 are positioned on the same central axis in the same horizontal plane; wherein,
YVO is the Nd4A TEC is arranged below the crystal 31A temperature controller 2 for controlling the Nd: YVO4The temperature of the crystal 3;
a TEC is arranged below the PPLN crystal 62A temperature controller 5 for controlling the temperature of the PPLN crystal 6.
The maximum output power of the LD laser diode 1 is 5W, and the central wavelength is 808 nm.
YVO is the Nd4The crystal 3 is cut by an a axis, and the size is 3mm multiplied by 2 mm; wherein,
Nd3+the ion doping concentration is 1 percent, and the Nd is YVO4The left end face of the crystal 3 is plated with an antireflection film of 808nm and a high-reflection film of 1064nm, and the right end face is plated with an antireflection film of 1064nm and a high-reflection film of 808 nm.
The TEC1A temperature controller 2 controls the Nd: YVO4The temperature of the crystal 3 is24-26 ℃ and the control precision is 0.1 ℃.
The saturable absorber mirror 4 is made of K9 glass as a substrate material, and 1064nm antireflection films are plated on the left end face and the right end face.
The PPLN crystal 6 is a periodically poled crystal, the length is 20mm, the width is 10mm, the thickness is 1mm, and the poling period is 30 μm.
And a 1064nm antireflection film and a 532nm high-reflection film are plated on the left end face of the PPLN crystal 6, and a 1064nm high-reflection film and a 532nm antireflection film are plated on the right end face of the PPLN crystal.
The TEC2The temperature controller 5 controls the temperature of the PPLN crystal 6 at 27-29 ℃ with a control accuracy of 0.1 ℃.
The preparation process of the saturable absorber mirror comprises the steps of adding single-walled carbon nanotube powder into an organic solvent, adding polyvinyl alcohol (PVA) serving as a dispersing agent into the organic solvent in order to uniformly disperse the single-walled carbon nanotubes, performing ultrasonic treatment to uniformly disperse the single-walled carbon nanotubes, and performing centrifugal treatment on the obtained single-walled carbon nanotube dispersion liquid; adding the organic colloid into the supernatant of the single-walled carbon nanotube obtained after centrifugation, and uniformly mixing the organic colloid and the supernatant by adopting ultrasonic treatment again to obtain a uniform mixed solution of the organic colloid and the supernatant; and spin-coating the mixed solution on a magnifying lens taking K9 glass as a substrate by adopting a spin coating method to obtain the saturable absorption mirror. The working principle of the saturable absorber of the carbon nano tube is that the absorption of the saturable absorber to laser in the cavity changes along with the intensity of an optical field, when the light intensity is weaker, the absorption to the light is very strong, the loss in the cavity is large, and therefore the light transmittance is very low. The absorption of the laser to light is reduced along with the increase of the light intensity, the loss in the cavity is small, when the absorption is saturated when the light intensity exceeds a specific value, the light transmittance reaches 100 percent, the laser pulse with the maximum light intensity is subjected to the minimum loss, and then the strong pulse laser can be output.
By the technical scheme, the LD laser diode 1 with 808nm is used for pumping Nd: YVO4The crystal 3 generates 1064nm continuous laser, and 1064nm continuous laser is obtained by utilizing the unique nonlinear optical characteristics of the carbon nanotube saturable absorber mirror 4The pulse laser is used as the pumping light of the green laser, and then the green pulse laser is generated by the PPLN frequency doubling crystal 6 to be output. The device accurately controls Nd: YVO through a temperature controller4The temperature of the crystal 3 and the temperature of the PPLN crystal 6 are controlled to avoid the influence of the thermal effect generated by the crystal under long-time operation on the working efficiency of the whole laser system. The saturable absorption mirror 4 is prepared by adopting the single-walled carbon nanotube, and has the characteristics of short recovery time (less than 1ps), low saturation light intensity, wide working spectrum range, simple preparation method, low cost and good chemical stability; the ultra-short pulse laser output of ps-fs magnitude can be realized, and the output pulse power and repetition frequency are greatly improved; the continuous light is used for directly generating pulse laser to pump the PPLN crystal 6 to obtain green pulse laser output, so that the walk-off effect is avoided; in addition, the invention has the characteristics of simple and compact structure, no need of lens and reflector, low cost, easy operation and convenient popularization and use.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (8)
1. A miniaturized pulse green laser is characterized by comprising LD laser diodes (1) and Nd, YVO which are sequentially arranged from left to right4A crystal (3), a saturable absorber mirror (4) and a PPLN crystal (6), the LD laser diode (1), the Nd: YVO4The central positions of the crystal (3), the saturable absorption mirror (4) and the PPLN crystal (6) are positioned on the same central axis in the same horizontal plane; wherein,
YVO is the Nd4A TEC is arranged below the crystal (3)1A temperature controller (2) for controlling the Nd: YVO4Crystal(3) The temperature of (a);
a TEC is arranged below the PPLN crystal (6)2A temperature controller (5) for controlling the temperature of the PPLN crystal (6).
2. The miniaturized pulsed green laser according to claim 1, characterized in that the LD laser diode (1) has a maximum output power of 5W and a center wavelength of 808 nm.
3. The miniaturized pulsed green laser of claim 1, wherein YVO is Nd4The crystal (3) is cut by adopting an a axis, and the size is 3mm multiplied by 2 mm; wherein,
Nd3+the ion doping concentration is 1 percent, and the Nd is YVO4The left end face of the crystal (3) is plated with an antireflection film of 808nm and a high-reflection film of 1064nm, and the right end face of the crystal is plated with an antireflection film of 1064nm and a high-reflection film of 808 nm.
4. The miniaturized pulsed green laser of claim 1, wherein the TEC is characterized in that1A temperature controller (2) controls the Nd: YVO4The temperature of the crystal (3) is 24-26 ℃, and the control precision is 0.1 ℃.
5. The miniaturized pulse green laser of claim 1, wherein the substrate material of the saturable absorber mirror (4) is K9 glass, and the left and right end faces are coated with antireflection film of 1064 nm.
6. A miniaturized pulsed green laser according to claim 1, characterized in that said PPLN crystal (6) is a periodically poled crystal, 20mm long, 10mm wide, 1mm thick and has a poling period of 30 μm.
7. The miniaturized pulse green laser of claim 6, wherein the left end face of the PPLN crystal (6) is coated with a 1064nm antireflection film and a 532nm high reflection film, and the right end face is coated with a 1064nm high reflection film and a 532nm antireflection film.
8. The miniaturized pulsed green laser of claim 1, wherein the TEC is characterized in that2The temperature controller (5) controls the temperature of the PPLN crystal (6) to be 27-29 ℃ and the control precision to be 0.1 ℃.
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| CN201810324471.6A CN108448376A (en) | 2018-04-12 | 2018-04-12 | Small-Sized Pulsed green (light) laser |
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| CN201810324471.6A CN108448376A (en) | 2018-04-12 | 2018-04-12 | Small-Sized Pulsed green (light) laser |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202009156U (en) * | 2011-04-21 | 2011-10-12 | 上海三鑫科技发展有限公司 | LD pump green solid laser adopting two TECs |
| CN102420385A (en) * | 2011-11-14 | 2012-04-18 | 北京工业大学 | Passive Q-switched microchip laser device |
| CN103050870A (en) * | 2012-10-17 | 2013-04-17 | 北京工业大学 | Novel microchip laser supporting optical fiber output |
| CN208078374U (en) * | 2018-04-12 | 2018-11-09 | 中航华东光电有限公司 | Small-Sized Pulsed green (light) laser |
-
2018
- 2018-04-12 CN CN201810324471.6A patent/CN108448376A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202009156U (en) * | 2011-04-21 | 2011-10-12 | 上海三鑫科技发展有限公司 | LD pump green solid laser adopting two TECs |
| CN102420385A (en) * | 2011-11-14 | 2012-04-18 | 北京工业大学 | Passive Q-switched microchip laser device |
| CN103050870A (en) * | 2012-10-17 | 2013-04-17 | 北京工业大学 | Novel microchip laser supporting optical fiber output |
| CN208078374U (en) * | 2018-04-12 | 2018-11-09 | 中航华东光电有限公司 | Small-Sized Pulsed green (light) laser |
Non-Patent Citations (1)
| Title |
|---|
| 邓开发 等: "《激光技术与应用》", 国防科技大学出版社 * |
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Application publication date: 20180824 |