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CN108447447B - Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method - Google Patents

Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method Download PDF

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Publication number
CN108447447B
CN108447447B CN201810517616.4A CN201810517616A CN108447447B CN 108447447 B CN108447447 B CN 108447447B CN 201810517616 A CN201810517616 A CN 201810517616A CN 108447447 B CN108447447 B CN 108447447B
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transistor
signal line
current
voltage signal
sample
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CN108447447A (en
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赵博华
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Nanjing Weixin Huapu Information Technology Co ltd
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Nanjing Weixin Huapu Information Technology Co ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a self-luminous current type pixel unit circuit suitable for a common anode, which is characterized by comprising the following components: the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the sample-and-hold capacitor C1, the data signal line IDATA, the switch control signal line smp_hld, the first input voltage signal line V1 and the second input voltage signal line V2, the ground line GND, the anode power supply line VDDH of the light emitting device, and the light emitting device. The novel common anode current type pixel unit driving circuit provided by the patent does not need negative power supply voltage compared with a common cathode structure, and meanwhile, the current type driving structure solves the problem that the pixel array driving tube has performance difference caused by process deviation, so that the display consistency of the whole display is improved. In addition, the pixel circuit has an overvoltage protection function, so that the problem of gate oxide breakdown of a transistor in a sampling stage can be effectively avoided.

Description

Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method
Technical Field
The invention relates to a pixel unit circuit of self-luminous display, in particular to a pixel unit circuit driven by OLED/LED micro-display.
Background
With the development of AR (Augmented Reality )/VR (Virtual Reality) technology, there has been a great deal of attention in recent years to micro display technology which is a branch of the display technology field, and generally displays with a diagonal size of less than 1 inch (2.54 cm) or displays which are as small as required for optical magnification are called micro displays.
Unlike conventional technology using amorphous silicon, microcrystalline silicon or low-temperature polysilicon, the oled and led os microdisplay uses monocrystalline silicon chips as substrates, that is, it can use the existing mature integrated circuit CMOS (Complementary Metal-Oxide-Semiconductor) technology, so that it can realize not only the active addressing matrix of the display screen pixels but also the driving control circuits of various functions such as scan chain circuits, digital-analog conversion circuits, band gap references, etc., thereby greatly reducing the external connection of the devices, increasing the reliability, and realizing light weight.
The pixel unit circuits of the OLEDoS and the LEDOS are circuits for controlling the current of each pixel point in the display array of the micro-display, and the accuracy of the current control of each pixel directly influences the display consistency of the whole micro-display; however, the conventional voltage-type pixel unit circuit at present may cause inconsistent parameters of driving tubes between pixels due to the deviation of manufacturing process, so as to cause a certain difference in current between each pixel unit. Meanwhile, the starting voltage of the OLED device is generally above 2V or 3V, and the power supply voltage of the normal CMOS process is about 3.3V at most, so that a negative voltage is inevitably used, and the design of the pixel unit circuit also needs to consider the problem of overvoltage protection. In addition, the design of the overall driving scheme is affected by the pixel unit circuits with different structures, so that the rationality of the design of the pixel unit circuits is important.
As shown in fig. 1, the conventional pixel cell capacitor belongs to a voltage type pixel cell circuit, and is composed of the most basic 2T1C (2 transistors 1 capacitor). The basic working principle is as follows:
(1) A data writing stage: when WR is in high level, the M2 tube is conducted, and an input voltage signal VDATA is written into the grid electrode of the M1 tube and the capacitor C1;
(2) And (3) a light-emitting stage: the WR becomes low level, the M2 tube is turned off, the data voltage stored on the C1 tube is driven by the M1 tube to generate corresponding driving current, the driving current flows through the OLED or the LED device and emits light, and the brightness of the emitted light corresponds to the written data voltage.
Problems with prior art solutions:
since the resolution of a microdisplay is generally 800×600 or more (1280×1024 or even higher), the number of pixel cell circuits reaches the order of hundreds of thousands or even millions. In the existing CMOS process, certain process deviation exists in the manufacturing process, and the threshold voltage, the gate oxide thickness or other parameters of the M1 tube in different pixel unit circuits are different. Therefore, each driving tube (M1) in the pixel array has a certain difference when converting the input voltage into the output current, and thus the display uniformity is affected.
In addition, the light emitting device in the pixel circuit of fig. 1 is of a common cathode design, which is not suitable for device driving of a common anode.
Disclosure of Invention
Aiming at the display consistency problem of the common cathode voltage type pixel unit circuit adopted by the existing self-luminous micro-display, a novel common anode current type pixel unit circuit structure is provided.
The invention first discloses a self-luminous current type pixel unit circuit suitable for a common anode, which comprises: a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a sample-and-hold capacitor C1, a data signal line IDATA, a switch control signal line SMP_HLD, a first input voltage signal line V1 and a second input voltage signal line V2, a ground GND, an anode power supply line VDDH of the light emitting device,
the anode of the light-emitting device is connected with a power line VDDH;
the cathode of the light emitting device is connected with the source electrode of the fourth transistor M4;
the switch control signal line smp_hld is connected to the gate of the second transistor M2, the gate of the third transistor M3, and the gate of the fourth transistor M4, respectively;
the data signal line IDATA is respectively connected with the source electrode of the second transistor M2 and the source electrode of the third transistor M3;
the ground GND, the first input voltage signal line V1 or the second input voltage signal line V2 is switched between the lower plate of the sample-hold capacitor C1, and the upper plate of the sample-hold capacitor C1 is connected to the gate of the first transistor M1 and the drain of the second transistor M2, respectively;
the drain electrode of the first transistor M1, the drain electrode of the third transistor M3 and the drain electrode of the fourth transistor M4 are mutually connected;
the source electrode of the first transistor M1 is connected with the ground GND;
the voltage value of the second input voltage signal line V2 > the voltage value of the first input voltage signal line V1.
Preferably, the light emitting device is an OLED or an LED.
Preferably, the light emitting device is a common anode structure, and a negative power supply voltage is not required compared to the common cathode structure.
Preferably, the first transistor M1, the second transistor M2 and the third transistor M3 are all NMOS transistors, and the fourth transistor M4 is a PMOS transistor.
The invention also discloses a driving current generation method based on the self-luminous current type pixel unit circuit suitable for the common anode, which comprises two working modes: a high-current working mode and a low-current working mode, wherein in the high-current working mode, the lower polar plate of the sampling holding capacitor C1 is directly connected with the ground wire GND; in the low-current working mode, the lower polar plate of the sample-hold capacitor C1 is respectively connected with the first input voltage signal line V1 or the second input voltage signal line V2 in different working stages.
Specifically, the high-current working mode includes:
(1) In the data sampling stage, the switch control signal line SMP_HLD is in a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is connected with the ground GND;
(2) In the light-emitting stage, the switch control signal line SMP_HLD is in a low level, the second transistor M2 and the third transistor M3 are turned off, the fourth transistor M4 is turned on, the voltage VDATA kept at the lower polar plate of the sample-hold capacitor C1 drives the first transistor M1 to generate a driving current and flows through the fourth transistor M4 and the light-emitting device, and the light-emitting device emits light; the lower plate of the sample-and-hold capacitor C1 remains connected to ground GND.
Specifically, the low-current working mode includes:
(1) In the data sampling stage, the switch control signal line SMP_HLD is in a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is kept connected with the first input voltage signal line V1;
(2) In the light-emitting stage, the switch control signal line SMP_HLD is in a low level, the second transistor M2 and the third transistor M3 are turned off, the fourth transistor M4 is turned on, and the connection signal line of the upper polar plate of the sample-hold capacitor C1 is switched from the first input voltage signal line V1 to the second input voltage signal line V2; at this time, the upper electrode plate of the sample-hold capacitor C1 is in a suspended state, so that the voltage signal VDATA of the upper electrode plate of the sample-hold capacitor C1 is changed into vdata+ (V2-V1), and the voltage signal drives the first transistor M1 to generate a corresponding driving current and flow through the fourth transistor M4 and the light emitting device, and the light emitting device emits light; in this process, the source voltage GND of the first transistor M1 is unchanged, and the gate voltage vdata+ (V2-V1) of the first transistor M1 is increased, so that the voltage difference between the gate and the source of the first transistor M1 is reduced, and the driving current of the first transistor M1 is correspondingly reduced, thereby realizing the driving of a small current.
The invention also discloses a display method of the image or the video, which is based on the generation method of the driving current in the heavy current working mode, and the display data of one frame is updated in the alternate operation of two working phases, so that the display of the image or the video is finished.
The invention also discloses a method for displaying the image or the video, which is based on the method for generating the driving current in the small-current working mode, and the display data of one frame is updated in the alternate operation of two working phases, so that the display of the image or the video is finished.
The beneficial effects of the invention are that
The novel common anode current type pixel unit driving circuit provided by the patent does not need negative power supply voltage compared with a common cathode structure, and meanwhile, the current type driving structure solves the problem that the pixel array driving tube has performance difference caused by process deviation, so that the display consistency of the whole display is improved. In addition, the pixel circuit has an overvoltage protection function, so that the problem of gate oxide breakdown of a transistor in a sampling stage can be effectively avoided.
Drawings
FIG. 1 shows a conventional voltage-type pixel cell circuit
FIG. 2 shows a current-mode pixel cell circuit according to the present invention
FIG. 3 is a sampling stage of the current-mode pixel cell circuit according to the present invention
FIG. 4 is a schematic diagram showing a light-emitting stage of the current-mode pixel cell circuit according to the present invention
FIG. 5 shows a sampling stage of the current-mode pixel cell circuit of the present invention
FIG. 6 is a schematic diagram showing a light-emitting stage of the current-mode pixel cell circuit according to the present invention
FIG. 7 is a schematic diagram showing the overvoltage protection of the current-mode pixel cell circuit in the sampling stage
FIG. 8 is a timing diagram illustrating the operation of the current pixel cell circuit of the present invention
Detailed Description
The invention is further illustrated below with reference to examples, but the scope of the invention is not limited thereto:
referring to fig. 2, a self-luminescence current type pixel unit circuit adapted for a common anode includes: a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a sample-and-hold capacitor C1, a data signal line IDATA, a switch control signal line SMP_HLD, a first input voltage signal line V1 and a second input voltage signal line V2, a ground GND, an anode power supply line VDDH of the light emitting device,
the anode of the light-emitting device is connected with a power line VDDH;
the cathode of the light emitting device is connected with the source electrode of the fourth transistor M4;
the switch control signal line smp_hld is connected to the gate of the second transistor M2, the gate of the third transistor M3, and the gate of the fourth transistor M4, respectively;
the data signal line IDATA is respectively connected with the source electrode of the second transistor M2 and the source electrode of the third transistor M3;
the ground GND, the first input voltage signal line V1 or the second input voltage signal line V2 is switched between the lower plate of the sample-hold capacitor C1, and the upper plate of the sample-hold capacitor C1 is connected to the gate of the first transistor M1 and the drain of the second transistor M2, respectively;
the drain electrode of the first transistor M1, the drain electrode of the third transistor M3 and the drain electrode of the fourth transistor M4 are mutually connected;
the source electrode of the first transistor M1 is connected with the ground GND;
the voltage value of the second input voltage signal line V2 > the voltage value of the first input voltage signal line V1.
Wherein: the light emitting device may be an OLED or an LED, and the light emitting device is a common anode structure, and does not require a negative supply voltage compared to a common cathode structure. The first transistor M1, the second transistor M2 and the third transistor M3 are all NMOS transistors, and the fourth transistor M4 is a PMOS transistor.
The method for generating the driving current is based on the self-luminous current type pixel unit circuit suitable for the common anode, and comprises two working modes: a high-current working mode and a low-current working mode, wherein in the high-current working mode, the lower polar plate of the sampling holding capacitor C1 is directly connected with the ground wire GND; in the low-current working mode, the lower polar plate of the sample-hold capacitor C1 is respectively connected with the first input voltage signal line V1 or the second input voltage signal line V2 in different working stages.
Specifically, the high-current working mode includes:
(1) In the data sampling stage, referring to fig. 3, the switch control signal line smp_hld is at a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is connected with the ground GND;
(2) In the light-emitting stage, referring to fig. 4, the switch control signal line smp_hld is at a low level, the second transistor M2 and the third transistor M3 are turned off, the fourth transistor M4 is turned on, and the voltage VDATA held at the lower plate of the sample-hold capacitor C1 drives the first transistor M1 to generate a driving current and flows through the fourth transistor M4 and the light-emitting device, and the light-emitting device emits light; the lower plate of the sample-and-hold capacitor C1 remains connected to ground GND.
Specifically, the low-current working mode includes:
(1) In the data sampling stage, referring to fig. 5, the switch control signal line smp_hld is at a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is kept connected with the first input voltage signal line V1;
(2) In the light emitting stage, referring to fig. 6, the switch control signal line smp_hld is at a low level, the second transistor M2 and the third transistor M3 are turned off, and the fourth transistor M4 is turned on, so that the connection signal line of the upper plate of the sample-and-hold capacitor C1 is switched from the first input voltage signal line V1 to the second input voltage signal line V2; at this time, the upper electrode plate of the sample-hold capacitor C1 is in a suspended state, so that the voltage signal VDATA of the upper electrode plate of the sample-hold capacitor C1 is changed into vdata+ (V2-V1), and the voltage signal drives the first transistor M1 to generate a corresponding driving current and flow through the fourth transistor M4 and the light emitting device, and the light emitting device emits light; in this process, the source voltage GND of the first transistor M1 is unchanged, and the gate voltage vdata+ (V2-V1) of the first transistor M1 is increased, so that the voltage difference between the gate and the source of the first transistor M1 is reduced, and the driving current of the first transistor M1 is correspondingly reduced, thereby realizing the driving of a small current.
The driving scheme is a current signal when transmitting a data signal into the pixel unit circuit, and the data voltage at the gate terminal of the first transistor M1 is generated by the input current, so that it is not affected by the variation of the transistor parameters; in addition, since the current signal is input, the noise interference resistance is stronger than that of the voltage signal, and therefore the overall display effect of the display can be improved.
In addition, since the fourth MOS transistor M4 is a PMOS transistor, when the cathode voltage of the OLED/LED device is higher, as shown in fig. 7, the parasitic diode between the substrate (generally, the high level) of the fourth MOS transistor M4 and the cathode of the light emitting device is turned on, so that the voltage of the cathode is pulled to a lower level, thereby avoiding a larger voltage difference between the gate and the source of the fourth MOS transistor M4. Therefore, the circuit also has overvoltage protection function.
The invention also discloses a method for displaying images or videos, which is based on the method for generating the driving current in the high-current working mode, and in combination with fig. 8, the display data of one frame is updated in the alternate operation of two working phases, so that the display of the images or videos is completed.
The invention also discloses a method for displaying images or videos, which is based on the method for generating the driving current in the small-current working mode, and in combination with fig. 8, the display data of one frame is updated in the alternate operation of two working phases, so that the display of the images or videos is completed.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.

Claims (5)

1. A driving current generation method is based on a self-luminous current type pixel unit circuit suitable for a common anode, and the circuit comprises: a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a sample-and-hold capacitor C1, a data signal line IDATA, a switch control signal line SMP_HLD, a first input voltage signal line V1 and a second input voltage signal line V2, a ground GND, an anode power supply line VDDH of the light emitting device,
the anode of the light-emitting device is connected with a power line VDDH;
the cathode of the light emitting device is connected with the source electrode of the fourth transistor M4;
the switch control signal line smp_hld is connected to the gate of the second transistor M2, the gate of the third transistor M3, and the gate of the fourth transistor M4, respectively;
the data signal line IDATA is respectively connected with the source electrode of the second transistor M2 and the source electrode of the third transistor M3;
the ground GND, the first input voltage signal line V1 or the second input voltage signal line V2 is switched between the lower plate of the sample-hold capacitor C1, and the upper plate of the sample-hold capacitor C1 is connected to the gate of the first transistor M1 and the drain of the second transistor M2, respectively;
the drain electrode of the first transistor M1, the drain electrode of the third transistor M3 and the drain electrode of the fourth transistor M4 are mutually connected;
the source electrode of the first transistor M1 is connected with the ground GND;
the voltage value of the second input voltage signal line V2 is larger than the voltage value of the first input voltage signal line V1;
the method is characterized by comprising two working modes: a high-current working mode and a low-current working mode, wherein in the high-current working mode, the lower polar plate of the sampling holding capacitor C1 is directly connected with the ground wire GND; in the low-current working mode, the lower polar plate of the sample-hold capacitor C1 is respectively connected with the first input voltage signal line V1 or the second input voltage signal line V2 in different working stages.
2. The method of claim 1, wherein the high current mode of operation comprises:
(1) In the data sampling stage, the switch control signal line SMP_HLD is in a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is connected with the ground GND;
(2) In the light-emitting stage, the switch control signal line SMP_HLD is in a low level, the second transistor M2 and the third transistor M3 are turned off, the fourth transistor M4 is turned on, the voltage VDATA kept at the lower polar plate of the sample-hold capacitor C1 drives the first transistor M1 to generate a driving current and flows through the fourth transistor M4 and the light-emitting device, and the light-emitting device emits light; the lower plate of the sample-and-hold capacitor C1 remains connected to ground GND.
3. The method of claim 1, wherein the low current mode of operation comprises:
(1) In the data sampling stage, the switch control signal line SMP_HLD is in a high level, the second transistor M2 and the third transistor M3 are turned on, the fourth transistor M4 is turned off, and the light emitting device is in a non-light emitting state; at this time, the gate of the first transistor M1 and the drain of the third transistor M3 are shorted together, and the first transistor M1 forms a diode connection form; at the same time, a current of the first transistor M1 flows through the second transistor M2 and the third transistor M3, the current being identical to an input current of the data signal line IDATA; the current of the final data signal line IDATA is converted into a voltage signal VDATA and stored on the upper polar plate of the sample-hold capacitor C1, namely the gate of the first transistor M1; the lower polar plate of the sample-hold capacitor C1 is kept connected with the first input voltage signal line V1;
(2) In the light-emitting stage, the switch control signal line SMP_HLD is in a low level, the second transistor M2 and the third transistor M3 are turned off, the fourth transistor M4 is turned on, and the connection signal line of the upper polar plate of the sample-hold capacitor C1 is switched from the first input voltage signal line V1 to the second input voltage signal line V2; at this time, the upper electrode plate of the sample-hold capacitor C1 is in a floating state, so that the voltage signal VDATA of the upper electrode plate of the sample-hold capacitor C1 changes to vdata+ (V2-V1), and the voltage signal drives the first transistor M1 to generate a corresponding driving current and flows through the fourth transistor M4 and the light emitting device, so that the light emitting device emits light.
4. A display method of an image or video based on the driving current generating method of claim 2, characterized in that the display data updating of one frame is completed in the alternate operation of two working phases, thereby completing the display of the image or video.
5. A display method of an image or video based on the driving current generating method according to claim 3, characterized in that the display data updating of one frame is completed in the alternate operation of two working phases, thereby completing the display of the image or video.
CN201810517616.4A 2018-05-25 2018-05-25 Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method Active CN108447447B (en)

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CN201810517616.4A CN108447447B (en) 2018-05-25 2018-05-25 Self-luminous current type pixel unit circuit suitable for common anode and driving current generation method

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Application Number Priority Date Filing Date Title
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CN108447447A CN108447447A (en) 2018-08-24
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CN102044213A (en) * 2009-10-21 2011-05-04 京东方科技集团股份有限公司 Current-driven pixel circuit, drive method thereof and organic light emitting display device
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CN104361857A (en) * 2014-11-04 2015-02-18 深圳市华星光电技术有限公司 Pixel driving circuit of organic light-emitting display
CN104392690A (en) * 2014-10-28 2015-03-04 中国电子科技集团公司第五十五研究所 Pixel unit circuit applied to AMOLED with common anode
CN104620307A (en) * 2012-05-01 2015-05-13 三星显示有限公司 Electro-optical device and method for driving same
CN208208304U (en) * 2018-05-25 2018-12-07 南京微芯华谱信息科技有限公司 Self-luminous current mode pixel unit circuit suitable for common-anode

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JP2006133542A (en) * 2004-11-08 2006-05-25 Sony Corp Pixel circuit and display apparatus
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CN102044213A (en) * 2009-10-21 2011-05-04 京东方科技集团股份有限公司 Current-driven pixel circuit, drive method thereof and organic light emitting display device
CN104620307A (en) * 2012-05-01 2015-05-13 三星显示有限公司 Electro-optical device and method for driving same
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