CN108365115B - Electroluminescent device, display panel and preparation method thereof - Google Patents
Electroluminescent device, display panel and preparation method thereof Download PDFInfo
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- CN108365115B CN108365115B CN201710756855.0A CN201710756855A CN108365115B CN 108365115 B CN108365115 B CN 108365115B CN 201710756855 A CN201710756855 A CN 201710756855A CN 108365115 B CN108365115 B CN 108365115B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a kind of electroluminescent devices, display panel and preparation method thereof.The electroluminescent device includes the transparent electrode set gradually on substrate, luminescent layer, semitransparent electrode, microcavity regulating course and reflecting layer.Wherein, semitransparent electrode, microcavity regulating course and reflecting layer form microcavity adjustment structure.Compared with existing bottom emitting type luminescent device, which can effectively improve the front light extraction efficiency of luminescent device, and can adjust colour gamut.Meanwhile the microcavity adjustment structure of the electroluminescent device is formed on the outside of the electrode of electroluminescent device, charge transmission when can't work electroluminescent device, compound generation any influence, it is more simple and effective.
Description
Technical field
The present invention relates to field of display, more particularly to a kind of electroluminescent device, display panel and preparation method thereof.
Background technique
Organic electroluminescent LED (OLED) due to its with self-luminous, reaction is fast, visual angle is wide, brightness is high, it is frivolous can
The advantages that flexible, becomes the main direction of development of next-generation display technology.
The electroluminescent devices internal quantum efficiency such as existing OLED has practically already been achieved 100%, but probably only 20% light
Son can be projected from device, and about 30% light loses because of total reflection, that is, luminescent device front lighting extraction efficiency according to
It is so lower.Currently, conventional bottom emitting luminescent device is mainly included in the transparent electrode being cascading on substrate, luminescent layer
And reflecting electrode.Transparent electrode is since translucency is good, and luminous emissivity is lower, and microcavity effect is weaker, can not effectively improve device
Front lighting extraction efficiency and adjust colour gamut.
Summary of the invention
Based on this, it is necessary to provide a kind of electroluminescent cell that can be improved front lighting extraction efficiency and colour gamut can be adjusted
Part, display panel and preparation method thereof.
A kind of electroluminescent device, including substrate, transparent electrode, luminescent layer, semitransparent electrode, microcavity regulating course and reflection
Layer；
The transparent electrode is set on the substrate, and the luminescent layer is located in the transparent electrode, the translucent electricity
Pole is set on the light-emitting layer；
The microcavity regulating course is located on the semitransparent electrode, and the reflecting layer is located on the microcavity regulating course.
The microcavity regulating course includes multiple microcavity regulatory regions in one of the embodiments, and the luminescent layer includes more
A subpixel area, multiple microcavity regulatory regions respectively correspond multiple subpixel areas.
The microcavity regulating course further includes vacancy section in one of the embodiments, and the adjacent microcavity regulatory region is logical
Cross the vacancy section isolation.
The reflecting layer is filled the vacancy section and is connect with the semitransparent electrode in one of the embodiments,.
The reflecting layer is metallic diaphragm in one of the embodiments, and the range of the reflectivity of the metallic diaphragm is
60%-95%.
In one of the embodiments, the microcavity regulating course with a thickness of h, wherein
H=N* λ/(2n), λ are the wavelength of transmitted light of the corresponding subpixel area of microcavity regulatory region, and N is positive integer, and n is
The refractive index of the microcavity regulatory region.
The microcavity regulating course is transparent organic film in one of the embodiments,.
The transparent electrode is metal conductive oxide layer in one of the embodiments,；
The luminescent layer includes at least light-emitting layer；And/or
The semitransparent electrode is aluminium electrode, aluminum alloy anode, silver electrode, alloy silver electrode, magnesium electrode or magnesium alloy electricity
Pole.
A kind of display panel, including electroluminescent device described above.
A kind of production method of electroluminescent device described above, includes the following steps:
Substrate is provided；
Patterned transparent electrode is formed on the substrate；
Luminescent layer is formed in the patterned transparent electrode；
Semitransparent electrode is formed on the light-emitting layer；
Microcavity regulating course is formed on the semitransparent electrode；
On the microcavity regulating course make reflecting layer to get.
Above-mentioned electroluminescent device includes the transparent electrode being cascading on substrate, luminescent layer and translucent electricity
Pole, microcavity regulating course and reflecting layer.Compared with existing bottom emitting type luminescent device, above-mentioned electroluminescent device is using translucent
Electrode replaces original reflecting electrode, and microcavity regulating course and reflecting layer are set gradually on semitransparent electrode, triplicity shape
At microcavity adjustment structure.After the light of above-mentioned electroluminescent device is issued out of luminescent layer, a part is projected by transparent electrode, separately
A part of directive semitransparent electrode；Some is reflected the light of directive semitransparent electrode by semitransparent electrode, another part then according to
It is secondary to be reflected later by reflecting layer by semitransparent electrode, microcavity regulating course；The part light reflected by reflecting layer after reflection can be with
The light reflected by semitransparent electrode forms resonance, and then the optical band for increasing specific wavelength projects, inhibits the light wave of other wavelength
Section projects, and achievees the purpose that enhance specific wavelength transmitting, reduces wave crest halfwidth.Therefore, electroluminescent device can be mentioned effectively
The front light extraction efficiency of high device, and colour gamut can be adjusted.
In addition, compared to the device for adjusting microcavity effect by adjusting charge transport layer thickness, the microcavity adjustment structure shape
At on the outside of the electrode of electroluminescent device, the charge transmission, compound generation when can't work electroluminescent device are any
It influences, it is more simple and effective.
Further, reflecting layer is conductive metal film layer, and vacancy section is filled in reflecting layer and semitransparent electrode is connected, at this time
Reflecting layer can be used as the electric conductivity that auxiliary electrode improves semitransparent electrode, and raising luminescent device and display device show uniform
Property.
The production method of above-mentioned electroluminescent device is simple, and technique is controllable, and production obtains electroluminescent device can be effective
The front light extraction efficiency of device is improved, and colour gamut can be adjusted.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the electroluminescent device of an embodiment；
Fig. 2 is the production method step schematic diagram of the electroluminescent device in Fig. 1；
Fig. 3 is the first partial structural schematic diagram of the electroluminescent device in Fig. 1；
Fig. 4 is the second partial structural diagram of the electroluminescent device in Fig. 1.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
It should be noted that it can be directly to separately when an element is considered as " connection " another element
One element may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
Incorporated by reference to Fig. 1, the electroluminescent device 10 of an embodiment, including substrate 100, transparent electrode 200, luminescent layer,
Semitransparent electrode 400, microcavity regulating course and reflecting layer 600.Transparent electrode 200 is set on the substrate 100, and luminescent layer is located at transparent electricity
On pole 200, semitransparent electrode 400 is set on the light-emitting layer, and microcavity regulating course is located on semitransparent electrode 400, and reflecting layer 600 is located at
On microcavity regulating course.Wherein, electroluminescent device 10 can be OLED, QLED, perovskite light emitting diode etc..
In the present embodiment, specifically, substrate 100 can be rigid substrates or flexible base board.Rigid substrates can be
Ceramic material or all kinds of glass materials etc..Flexible base board can be by Kapton (PI) and its derivative, poly- naphthalenedicarboxylic acid
The substrate that the materials such as glycol ester (PEN), phosphoenolpyruvate (PEP) or diphenylene ether resin are formed.On substrate 100
With driving tft array.Tft array may include non-crystalline silicon tft array, polycrystalline tft array and metal oxide tft array
Deng.
In the present embodiment, specifically, transparent electrode 200 can be metal conductive oxide layer.Wherein metal aoxidizes
Object can be with ITO, IZO, FTO etc..
In the present embodiment, luminescent layer includes at least light-emitting layer.Luminescent layer can be one or more layers function film
Layer.Preferably, luminescent layer include be cascading electron injecting layer, electron transfer layer, cave resistance barrier layer, light-emitting layer,
Electronic barrier layer, hole transmission layer, hole injection layer, exciton confining layers.
Specifically, luminescent layer includes the first color sub-pixels region 310, the second color sub-pixels region 320 and third face
Sub-pixels region 330.Adjacent subpixel area is isolated by pixel defining layer 110.In the present embodiment, the first color
Subpixel area 310 can correspond to blue subpixel areas, the corresponding green subpixel areas in the second color sub-pixels region 320, the
Three color sub-pixels regions 330 correspond to red subpixel areas.
It is appreciated that in other embodiments, luminescent layer may be by blue, green, red and white or by indigo plant
Color, green, multiple subpixel areas of four kinds of different colours of red and yellow are constituted.In addition, luminescent layer can also be by identical face
Multiple subpixel areas of color are constituted, for example, be multiple subpixel areas of blue, be red multiple subpixel areas,
It is multiple subpixel areas of green and is that multiple subpixel areas etc. of white are constituted.Multiple and different color sub-pixels areas
The arrangement mode of domain or multiple same color subpixel areas, which can according to need, to be adjusted.
In the present embodiment, specifically, semitransparent electrode 400 can for by aluminium electrode, aluminum alloy anode, silver electrode,
Alloy silver electrode, magnesium electrode or magnesium alloy electrode.The thickness of semitransparent electrode 400 can be 15~30nm.In other embodiment party
In formula, the material and thickness of semitransparent electrode 400 can also be adjusted according to the needs of light transmittance or reflectivity.
In the present embodiment, it is preferable that microcavity regulating course includes the first microcavity regulatory region 510, the second microcavity regulatory region
520, third microcavity regulatory region 530 and vacancy section.Adjacent the first microcavity regulatory region 510, the second microcavity regulatory region 520 and third
It is isolated by vacancy section between microcavity regulatory region 530.
Wherein, the first color sub-pixels region 310 of the corresponding luminescent layer of the first chamber regulatory region 510, the second microcavity regulatory region
Second color sub-pixels region 320 of 520 corresponding luminescent layers, third color of the corresponding luminescent layer of third microcavity regulatory region 530
Pixel region 330.Namely the first microcavity regulatory region 510, the second microcavity regulatory region 520 and third microcavity regulatory region 530 are distinguished
Pass through the light of blue subpixel areas, green subpixel areas and the sending of red subpixel areas and anti-through reflecting layer 600
It penetrates.Vacancy section can respective pixel define layer 110.
Preferably, microcavity regulating course can be transparent organic film, such as transparent epoxy layer, translucency be good.
It, can also be right in luminescent layer when the adjustment of different colours subpixel area it is appreciated that in other embodiments
Corresponding adjustment should be carried out, to microcavity regulatory region to improve the front light extraction efficiency of device and adjust colour gamut.
Preferably, microcavity regulatory region with a thickness of h, wherein h=N* λ/(2n), λ be the corresponding son of each microcavity regulatory region
The wavelength of transmitted light of pixel region, N are positive integer, and n is the refractive index of the microcavity regulatory region.
In the present embodiment, reflecting layer 600 is preferably metallic diaphragm, and material can be silver, silver alloy, molybdenum or molybdenum alloy
Deng.The reflectivity in reflecting layer 600 ranges preferably from 60%-95%.
Further, reflecting layer 600 is filled vacancy section and is connect with semitransparent electrode 400, can be improved semitransparent electrode
The uniformity that 400 electric conductivity, raising luminescent device and display device are shown.
Compared with conventional bottom emitting type luminescent device, the electroluminescent device 10 of present embodiment uses semitransparent electrode
400 replace original reflecting electrode, and microcavity regulating course and reflecting layer 600, San Zhejie are set gradually on semitransparent electrode 400
Conjunction forms microcavity adjustment structure, can effectively improve the front light extraction efficiency of device, and can adjust colour gamut.
In addition, compared to the luminescent device for adjusting microcavity effect by adjusting charge transport layer thickness, present embodiment
Microcavity adjustment structure is formed on the outside of the electrode of electroluminescent device, and charge when can't work electroluminescent device passes
Defeated, compound generation any influence, it is more simple and effective.Microcavity is introduced namely outside electroluminescent device electrode structure adjusts knot
Structure can need to adjust the thickness of a certain functional layer when micro-cavity structure to avoid introducing in EL device structure, to lead
It causes the transmission of carrier to change, and then exciton recombination zone variation is caused to cause spectrum change.The electroluminescent hair of present embodiment
Optical device 10 simplifies the adjustment process of micro-cavity structure.
A kind of display panel, including above-mentioned electroluminescent device.
Please further combined with Fig. 2, the production method 20 of the electroluminescent device 10 of present embodiment includes the following steps:
S1 provides substrate 100 please further combined with Fig. 3.
S2, deposition forms transparent electrode 200 on the substrate 100, and passes through yellow light art pattern CAD.It is formed on substrate again
Pixel defining layer 110.In other embodiments, as long as forming patterned transparent electrode 200 in substrate 100.
S3, deposition forms luminescent layer in patterned transparent electrode 200.
S4, deposition forms semitransparent electrode 400 on luminescent layer 300.
S5, please further combined with Fig. 4, being formed on semitransparent electrode 400 by fine mask plate method has vacancy section
Microcavity regulating course.Wherein, the first microcavity regulatory region 510 adjacent in microcavity regulating course, the second microcavity regulatory region 520 and third are micro-
Chamber regulatory region 530 is isolated the blue subpixel areas so that the corresponding luminescent layer of the first chamber regulatory region 510 by vacancy section, and second
The green subpixel areas of the corresponding luminescent layer of microcavity regulatory region 520, the sub- picture of red of the corresponding luminescent layer of third microcavity regulatory region 530
Plain region.
In other embodiments, the vacancy section of microcavity regulating course can also pass through the shapes such as yellow light technique (development etches)
At.
S6 makes the reflecting layer 600 that is connected with semitransparent electrode 400 on microcavity regulating course, encapsulate to get.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of electroluminescent device, which is characterized in that including substrate, transparent electrode, luminescent layer, semitransparent electrode, microcavity tune
Ganglionic layer and reflecting layer；
The transparent electrode is set on the substrate, and the luminescent layer is located in the transparent electrode, and the semitransparent electrode is set
On the light-emitting layer；
The microcavity regulating course is located on the semitransparent electrode；
The microcavity regulating course includes multiple microcavity regulatory regions and vacancy section, and the luminescent layer includes multiple subpixel areas, institute
The position for stating microcavity regulatory region and the subpixel area corresponds, and the adjacent microcavity regulatory region passes through the vacancy section
Isolation；
The reflecting layer is located on the microcavity regulating course, and the reflecting layer is conductive metal film layer, and institute is filled in the reflecting layer
It states vacancy section and is connect with the semitransparent electrode.
2. electroluminescent device according to claim 1, which is characterized in that the adjacent subpixel area passes through pixel
Layer isolation is defined, the vacancy section corresponds to the pixel defining layer.
3. electroluminescent device according to claim 1 or 2, which is characterized in that the model of the reflectivity of the metallic diaphragm
It encloses for 60%-95%.
4. electroluminescent device according to claim 1 or 2, which is characterized in that the thickness of each microcavity regulatory region
For h, wherein
H=N* λ/(2n), λ are the wavelength of transmitted light of the corresponding subpixel area of microcavity regulatory region, and N is positive integer, and n is that this is micro-
The refractive index of chamber regulatory region.
5. electroluminescent device according to claim 1 or 2, which is characterized in that the microcavity regulating course is transparent organic
Film layer.
6. electroluminescent device according to claim 1 or 2, which is characterized in that the transparent electrode is metal oxide
Conductive layer；
The luminescent layer includes at least light-emitting layer；And/or
The semitransparent electrode is aluminium electrode, aluminum alloy anode, silver electrode, alloy silver electrode, magnesium electrode or magnesium alloy electrode.
7. a kind of display panel, which is characterized in that including electroluminescent device as claimed in any one of claims 1 to 6.
8. a kind of production method of electroluminescent device as claimed in any one of claims 1 to 6, which is characterized in that including as follows
Step:
Substrate is provided；
Patterned transparent electrode is formed on the substrate；
Luminescent layer is formed in the patterned transparent electrode, the luminescent layer includes multiple subpixel areas；
Semitransparent electrode is formed on the light-emitting layer；
Microcavity regulating course is formed on the semitransparent electrode, the microcavity regulating course includes multiple microcavity regulatory regions and hollow out
The position of area, the microcavity regulatory region and the subpixel area corresponds, and the adjacent microcavity regulatory region passes through described
Vacancy section isolation；
Reflecting layer is made on the microcavity regulating course, the reflecting layer is conductive metal film layer, described in the reflecting layer filling
Vacancy section and connect with the semitransparent electrode to get.
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| CN109560115B (en) | 2018-12-12 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel, display panel and display device |
| CN110459564A (en) * | 2019-08-01 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | A display panel and display device thereof |
| CN111098681B (en) * | 2019-11-13 | 2022-05-27 | 江苏铁锚玻璃股份有限公司 | Closed self-starting energy-saving starry sky glass skylight |
| CN113193150B (en) * | 2021-04-28 | 2023-06-16 | 合肥京东方卓印科技有限公司 | Top light-emitting display panel and display device |
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