CN108365115A - Electroluminescent device, display panel and preparation method thereof - Google Patents
Electroluminescent device, display panel and preparation method thereof Download PDFInfo
- Publication number
- CN108365115A CN108365115A CN201710756855.0A CN201710756855A CN108365115A CN 108365115 A CN108365115 A CN 108365115A CN 201710756855 A CN201710756855 A CN 201710756855A CN 108365115 A CN108365115 A CN 108365115A
- Authority
- CN
- China
- Prior art keywords
- microcavity
- electrode
- electroluminescent device
- layer
- regulating course
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a kind of electroluminescent devices, display panel and preparation method thereof.The electroluminescent device includes the transparent electrode set gradually on substrate, luminescent layer, semitransparent electrode, microcavity regulating course and reflecting layer.Wherein, semitransparent electrode, microcavity regulating course and reflecting layer form microcavity adjustment structure.Compared with existing bottom emitting type luminescent device, which can effectively improve the front light extraction efficiency of luminescent device, and can adjust colour gamut.Meanwhile the microcavity adjustment structure of the electroluminescent device is formed on the outside of the electrode of electroluminescent device, charge transmission when can't work electroluminescent device, compound generation any influence, it is more simple and effective.
Description
Technical field
The present invention relates to field of display, more particularly to a kind of electroluminescent device, display panel and preparation method thereof.
Background technology
Organic electroluminescent LED (OLED) due to its with self-luminous, reaction is fast, visual angle is wide, brightness is high, it is frivolous can
The advantages that flexible, becomes the main direction of development of next-generation display technology.
The electroluminescent devices internal quantum efficiency such as existing OLED has practically already been achieved 100%, but probably only 20% light
Son can be projected from device, and about 30% light loses because of total reflection, that is, luminescent device front lighting extraction efficiency according to
It is so relatively low.Currently, conventional bottom emitting luminescent device is mainly included in the transparent electrode being cascading on substrate, luminescent layer
And reflecting electrode.Transparent electrode is since translucency is good, and luminous emissivity is relatively low, and microcavity effect is weaker, can not effectively improve device
Front lighting extraction efficiency and adjust colour gamut.
Invention content
Based on this, it is necessary to provide a kind of electroluminescent cell that can be improved front lighting extraction efficiency and colour gamut can be adjusted
Part, display panel and preparation method thereof.
A kind of electroluminescent device, including substrate, transparent electrode, luminescent layer, semitransparent electrode, microcavity regulating course and reflection
Layer；
The transparent electrode is set on the substrate, and the luminescent layer is located in the transparent electrode, the translucent electricity
Pole is set on the light-emitting layer；
The microcavity regulating course is located on the semitransparent electrode, and the reflecting layer is located on the microcavity regulating course.
The microcavity regulating course includes multiple microcavity regulatory regions in one of the embodiments, and the luminescent layer includes more
A subpixel area, multiple microcavity regulatory regions correspond to multiple subpixel areas respectively.
The microcavity regulating course further includes vacancy section in one of the embodiments, and the adjacent microcavity regulatory region is logical
Cross the vacancy section isolation.
The reflecting layer is filled the vacancy section and is connect with the semitransparent electrode in one of the embodiments,.
The reflecting layer is metallic diaphragm in one of the embodiments, and the reflectivity of the metallic diaphragm is ranging from
60%-95%.
The thickness of the microcavity regulating course is h in one of the embodiments, wherein
H=N* λ/(2n), λ are the wavelength of transmitted light of the corresponding subpixel area of microcavity regulatory region, and N is positive integer, and n is
The refractive index of the microcavity regulatory region.
The microcavity regulating course is transparent organic film in one of the embodiments,.
The transparent electrode is metal conductive oxide layer in one of the embodiments,；
The luminescent layer includes at least light-emitting layer；And/or
The semitransparent electrode is aluminium electrode, aluminum alloy anode, silver electrode, alloy silver electrode, magnesium electrode or magnesium alloy electricity
Pole.
A kind of display panel, including electroluminescent device described above.
A kind of production method of electroluminescent device described above, includes the following steps：
Substrate is provided；
Patterned transparent electrode is formed on the substrate；
Luminescent layer is formed in the patterned transparent electrode；
Semitransparent electrode is formed on the light-emitting layer；
Microcavity regulating course is formed on the semitransparent electrode；
On the microcavity regulating course make reflecting layer to get.
Above-mentioned electroluminescent device includes the transparent electrode being cascading on substrate, luminescent layer and translucent electricity
Pole, microcavity regulating course and reflecting layer.Compared with existing bottom emitting type luminescent device, above-mentioned electroluminescent device is using translucent
Electrode replaces original reflecting electrode, and microcavity regulating course and reflecting layer are set gradually on semitransparent electrode, triplicity shape
At microcavity adjustment structure.After the light of above-mentioned electroluminescent device is sent out out of luminescent layer, a part is projected by transparent electrode, separately
A part of directive semitransparent electrode；Some is reflected the light of directive semitransparent electrode by semitransparent electrode, another part then according to
It is secondary to be reflected later by reflecting layer by semitransparent electrode, microcavity regulating course；Part light by reflecting layer reflection after reflection can be with
Resonance is formed by the light of semitransparent electrode reflection, and then the optical band for increasing specific wavelength projects, inhibits the light wave of other wavelength
Section projects, and achievees the purpose that enhance specific wavelength transmitting, reduces wave crest halfwidth.Therefore, electroluminescent device can be carried effectively
The front light extraction efficiency of high device, and colour gamut can be adjusted.
In addition, compared to the device for adjusting microcavity effect by adjusting charge transport layer thickness, the microcavity adjustment structure shape
At on the outside of the electrode of electroluminescent device, the charge transmission, compound generation when can't work electroluminescent device are any
It influences, it is more simple and effective.
Further, reflecting layer is conductive metal film layer, and vacancy section is filled in reflecting layer and semitransparent electrode is connected, at this time
Reflecting layer can be used as the electric conductivity that auxiliary electrode improves semitransparent electrode, and raising luminescent device and display device show uniform
Property.
The production method of above-mentioned electroluminescent device is simple, and technique is controllable, and making acquisition electroluminescent device can be effective
The front light extraction efficiency of device is improved, and colour gamut can be adjusted.
Description of the drawings
Fig. 1 is the structural schematic diagram of the electroluminescent device of an embodiment；
Fig. 2 is the production method step schematic diagram of the electroluminescent device in Fig. 1；
Fig. 3 is the First partial structural schematic diagram of the electroluminescent device in Fig. 1；
Fig. 4 is the second partial structural diagram of the electroluminescent device in Fig. 1.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.Keep the understanding to the disclosure more thorough on the contrary, purpose of providing these embodiments is
Comprehensively.
It should be noted that when an element is considered as " connection " another element, it can be directly to separately
One element may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the Listed Items of pass.
Incorporated by reference to Fig. 1, the electroluminescent device 10 of an embodiment, including substrate 100, transparent electrode 200, luminescent layer,
Semitransparent electrode 400, microcavity regulating course and reflecting layer 600.Transparent electrode 200 is set on the substrate 100, and luminescent layer is located at transparent electricity
On pole 200, semitransparent electrode 400 is set on the light-emitting layer, and microcavity regulating course is located on semitransparent electrode 400, and reflecting layer 600 is located at
On microcavity regulating course.Wherein, electroluminescent device 10 can be OLED, QLED, perovskite light emitting diode etc..
In the present embodiment, specifically, substrate 100 can be rigid substrates or flexible base board.Rigid substrates can be
Ceramic material or all kinds of glass materials etc..Flexible base board can be by Kapton (PI) and its derivative, poly- naphthalenedicarboxylic acid
The substrate that the materials such as glycol ester (PEN), phosphoenolpyruvate (PEP) or diphenylene ether resin are formed.On substrate 100
With driving tft array.Tft array may include non-crystalline silicon tft array, polycrystalline tft array and metal oxide tft array
Deng.
In the present embodiment, specifically, transparent electrode 200 can be metal conductive oxide layer.Wherein metal aoxidizes
Object can be with ITO, IZO, FTO etc..
In the present embodiment, luminescent layer includes at least light-emitting layer.Luminescent layer can be one or more layers function film
Layer.Preferably, luminescent layer include be cascading electron injecting layer, electron transfer layer, cave resistance barrier layer, light-emitting layer,
Electronic barrier layer, hole transmission layer, hole injection layer, exciton confining layers.
Specifically, luminescent layer includes the first color sub-pixels region 310, the second color sub-pixels region 320 and third face
Sub-pixels region 330.Adjacent subpixel area is isolated by pixel defining layer 110.In the present embodiment, the first color
Subpixel area 310 can correspond to blue subpixel areas, the second color sub-pixels region 320 corresponds to green subpixel areas, the
Three color sub-pixels regions 330 correspond to red subpixel areas.
It is appreciated that in other embodiments, luminescent layer may be by blue, green, red and white or by indigo plant
Color, green, multiple subpixel areas of four kinds of different colours of red and yellow are constituted.In addition, luminescent layer can also be by identical face
Multiple subpixel areas of color are constituted, for example, be multiple subpixel areas of blue, be red multiple subpixel areas,
Be multiple subpixel areas of green and be white the compositions such as multiple subpixel areas.Multiple and different color sub-pixels areas
The arrangement mode of domain or multiple same color subpixel areas can be adjusted as needed.
In the present embodiment, specifically, semitransparent electrode 400 can be by aluminium electrode, aluminum alloy anode, silver electrode,
Alloy silver electrode, magnesium electrode or magnesium alloy electrode.The thickness of semitransparent electrode 400 can be 15~30nm.In other embodiment party
In formula, the material and thickness of semitransparent electrode 400 can also be adjusted according to the needs of light transmittance or reflectivity.
In the present embodiment, it is preferable that microcavity regulating course includes the first microcavity regulatory region 510, the second microcavity regulatory region
520, third microcavity regulatory region 530 and vacancy section.Adjacent the first microcavity regulatory region 510, the second microcavity regulatory region 520 and third
It is isolated by vacancy section between microcavity regulatory region 530.
Wherein, the first chamber regulatory region 510 corresponds to the first color sub-pixels region 310 of luminescent layer, the second microcavity regulatory region
520 correspond to the second color sub-pixels region 320 of luminescent layer, and third microcavity regulatory region 530 corresponds to third color of luminescent layer
Pixel region 330.Namely the first microcavity regulatory region 510, the second microcavity regulatory region 520 and third microcavity regulatory region 530 are distinguished
The light of blue subpixel areas, green subpixel areas and red subpixel areas sent out is set to pass through and anti-through reflecting layer 600
It penetrates.Vacancy section can respective pixel define layer 110.
Preferably, microcavity regulating course can be transparent organic film, such as transparent epoxy layer, translucency be good.
It is appreciated that in other embodiments, it, also can be right when different colours subpixel area adjusts in luminescent layer
Corresponding adjustment should be carried out to microcavity regulatory region, to improve the front light extraction efficiency of device and adjust colour gamut.
Preferably, the thickness of microcavity regulatory region is h, wherein h=N* λ/(2n), λ are the corresponding son of each microcavity regulatory region
The wavelength of transmitted light of pixel region, N are positive integer, and n is the refractive index of the microcavity regulatory region.
In the present embodiment, reflecting layer 600 is preferably metallic diaphragm, and material can be silver, silver alloy, molybdenum or molybdenum alloy
Deng.The reflectivity in reflecting layer 600 ranges preferably from 60%-95%.
Further, reflecting layer 600 is filled vacancy section and is connect with semitransparent electrode 400, can improve semitransparent electrode
The uniformity that 400 electric conductivity, raising luminescent device and display device are shown.
Compared with conventional bottom emitting type luminescent device, the electroluminescent device 10 of present embodiment uses semitransparent electrode
400 replace original reflecting electrode, and microcavity regulating course and reflecting layer 600, San Zhejie are set gradually on semitransparent electrode 400
Conjunction forms microcavity adjustment structure, can effectively improve the front light extraction efficiency of device, and can adjust colour gamut.
In addition, compared to the luminescent device for adjusting microcavity effect by adjusting charge transport layer thickness, present embodiment
Microcavity adjustment structure is formed on the outside of the electrode of electroluminescent device, and charge when can't work electroluminescent device passes
Defeated, compound generation any influence, it is more simple and effective.Microcavity is introduced namely outside electroluminescent device electrode structure adjusts knot
Structure, can be to avoid the thickness for needing to adjust a certain functional layer when micro-cavity structure be introduced, to lead in EL device structure
It causes the transmission of carrier to change, and then exciton recombination zone variation is caused to cause spectrum change.The electroluminescent hair of present embodiment
Optical device 10 simplifies the adjustment process of micro-cavity structure.
A kind of display panel, including above-mentioned electroluminescent device.
Please further combined with Fig. 2, the production method 20 of the electroluminescent device 10 of present embodiment includes the following steps：
S1 provides substrate 100 please further combined with Fig. 3.
S2, deposition forms transparent electrode 200 on the substrate 100, and passes through yellow light art pattern CAD.It is formed on substrate again
Pixel defining layer 110.In other embodiments, as long as forming patterned transparent electrode 200 in substrate 100.
S3, deposition forms luminescent layer in patterned transparent electrode 200.
S4, deposition forms semitransparent electrode 400 on luminescent layer 300.
S5 is formed by fine mask plate method with vacancy section please further combined with Fig. 4 on semitransparent electrode 400
Microcavity regulating course.Wherein, the first microcavity regulatory region 510 adjacent in microcavity regulating course, the second microcavity regulatory region 520 and third are micro-
Chamber regulatory region 530 by vacancy section be isolated so that the first chamber regulatory region 510 correspond to luminescent layer blue subpixel areas, second
Microcavity regulatory region 520 corresponds to the green subpixel areas of luminescent layer, and third microcavity regulatory region 530 corresponds to the sub- picture of red of luminescent layer
Plain region.
In other embodiments, the vacancy section of microcavity regulating course can also pass through the shapes such as yellow light technique (development etches)
At.
S6 makes the reflecting layer 600 that is connected with semitransparent electrode 400 on microcavity regulating course, encapsulate to get.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of electroluminescent device, which is characterized in that including substrate, transparent electrode, luminescent layer, semitransparent electrode, microcavity tune
Ganglionic layer and reflecting layer；
The transparent electrode is set on the substrate, and the luminescent layer is located in the transparent electrode, and the semitransparent electrode is set
On the light-emitting layer；
The microcavity regulating course is located on the semitransparent electrode, and the reflecting layer is located on the microcavity regulating course.
2. electroluminescent device according to claim 1, which is characterized in that the microcavity regulating course includes multiple microcavity tune
Area is saved, the luminescent layer includes multiple subpixel areas, and multiple microcavity regulatory regions correspond to multiple sub-pixel areas respectively
Domain.
3. electroluminescent device according to claim 2, which is characterized in that the microcavity regulating course further includes vacancy section,
The adjacent microcavity regulatory region is isolated by the vacancy section.
4. electroluminescent device according to claim 3, which is characterized in that the reflecting layer fill the vacancy section and with
The semitransparent electrode connection.
5. electroluminescent device according to any one of claims 1 to 4, which is characterized in that the reflecting layer is metal film
Layer, the ranging from 60%-95% of the reflectivity of the metallic diaphragm.
6. according to claim 2 to 4 any one of them electroluminescent device, which is characterized in that each microcavity regulatory region
Thickness be h, wherein
H=N* λ/(2n), λ are the wavelength of transmitted light of the corresponding subpixel area of microcavity regulatory region, and N is positive integer, and n is that this is micro-
The refractive index of chamber regulatory region.
7. electroluminescent device according to any one of claims 1 to 4, which is characterized in that the microcavity regulating course is
Bright organic film.
8. electroluminescent device according to any one of claims 1 to 4, which is characterized in that the transparent electrode is metal
Oxide conducting layer；
The luminescent layer includes at least light-emitting layer；And/or
The semitransparent electrode is aluminium electrode, aluminum alloy anode, silver electrode, alloy silver electrode, magnesium electrode or magnesium alloy electrode.
9. a kind of display panel, which is characterized in that including claim 1 to 8 any one of them electroluminescent device.
10. a kind of production method of claim 1 to 8 any one of them electroluminescent device, which is characterized in that including as follows
Step：
Substrate is provided；
Patterned transparent electrode is formed on the substrate；
Luminescent layer is formed in the patterned transparent electrode；
Semitransparent electrode is formed on the light-emitting layer；
Microcavity regulating course is formed on the semitransparent electrode；
On the microcavity regulating course make reflecting layer to get.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710756855.0A CN108365115B (en) | 2017-08-29 | 2017-08-29 | Electroluminescent device, display panel and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710756855.0A CN108365115B (en) | 2017-08-29 | 2017-08-29 | Electroluminescent device, display panel and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108365115A true CN108365115A (en) | 2018-08-03 |
| CN108365115B CN108365115B (en) | 2019-07-19 |
Family
ID=63009931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710756855.0A Active CN108365115B (en) | 2017-08-29 | 2017-08-29 | Electroluminescent device, display panel and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108365115B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560115A (en) * | 2018-12-12 | 2019-04-02 | 广州新视界光电科技有限公司 | A kind of preparation method of display panel, display panel and display device |
| CN110459564A (en) * | 2019-08-01 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | A display panel and display device thereof |
| CN111098681A (en) * | 2019-11-13 | 2020-05-05 | 江苏铁锚明信交通科技有限公司 | Closed self-starting energy-saving starry sky glass skylight |
| CN113193150A (en) * | 2021-04-28 | 2021-07-30 | 合肥京东方卓印科技有限公司 | Top-emitting display panel and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060060171A (en) * | 2004-11-30 | 2006-06-05 | (주)케이디티 | Light source using microcavity organic light emitting device and photoexcitation light emitting layer |
| CN1849719A (en) * | 2003-09-12 | 2006-10-18 | 伊斯曼柯达公司 | Stable Organic Light Emitting Diode Devices |
| CN1947277A (en) * | 2004-04-22 | 2007-04-11 | 肖特股份公司 | Organic, electro-optical element with increased decoupling efficiency |
| CN101123838A (en) * | 2006-08-11 | 2008-02-13 | 大日本印刷株式会社 | Organic electroluminescence element |
| CN102184937A (en) * | 2011-05-03 | 2011-09-14 | 昆山维信诺显示技术有限公司 | Organic electroluminescence device and preparation method thereof |
| CN103210518A (en) * | 2010-10-27 | 2013-07-17 | 欧司朗光电半导体有限公司 | Electronic component and method for producing an electronic component |
| CN104103673A (en) * | 2014-07-09 | 2014-10-15 | 京东方科技集团股份有限公司 | Organic light emitting diode (OLED) displayer and preparation method thereof |
| CN204167324U (en) * | 2014-07-09 | 2015-02-18 | 京东方科技集团股份有限公司 | A kind of OLED display |
-
2017
- 2017-08-29 CN CN201710756855.0A patent/CN108365115B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1849719A (en) * | 2003-09-12 | 2006-10-18 | 伊斯曼柯达公司 | Stable Organic Light Emitting Diode Devices |
| CN1947277A (en) * | 2004-04-22 | 2007-04-11 | 肖特股份公司 | Organic, electro-optical element with increased decoupling efficiency |
| KR20060060171A (en) * | 2004-11-30 | 2006-06-05 | (주)케이디티 | Light source using microcavity organic light emitting device and photoexcitation light emitting layer |
| CN101123838A (en) * | 2006-08-11 | 2008-02-13 | 大日本印刷株式会社 | Organic electroluminescence element |
| CN103210518A (en) * | 2010-10-27 | 2013-07-17 | 欧司朗光电半导体有限公司 | Electronic component and method for producing an electronic component |
| CN102184937A (en) * | 2011-05-03 | 2011-09-14 | 昆山维信诺显示技术有限公司 | Organic electroluminescence device and preparation method thereof |
| CN104103673A (en) * | 2014-07-09 | 2014-10-15 | 京东方科技集团股份有限公司 | Organic light emitting diode (OLED) displayer and preparation method thereof |
| CN204167324U (en) * | 2014-07-09 | 2015-02-18 | 京东方科技集团股份有限公司 | A kind of OLED display |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560115A (en) * | 2018-12-12 | 2019-04-02 | 广州新视界光电科技有限公司 | A kind of preparation method of display panel, display panel and display device |
| US11917894B2 (en) | 2018-12-12 | 2024-02-27 | Guangzhou New Vision Opto-Electronic Technology Co., Ltd. | Method for preparing organic electroluminescent device, and organic electroluminescent device and display apparatus |
| CN110459564A (en) * | 2019-08-01 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | A display panel and display device thereof |
| WO2021017312A1 (en) * | 2019-08-01 | 2021-02-04 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device comprising same |
| US11258048B2 (en) | 2019-08-01 | 2022-02-22 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel with first electrode having different refractive indexes in sub-pixel regions of different colors and display panel device having the same |
| CN111098681A (en) * | 2019-11-13 | 2020-05-05 | 江苏铁锚明信交通科技有限公司 | Closed self-starting energy-saving starry sky glass skylight |
| CN113193150A (en) * | 2021-04-28 | 2021-07-30 | 合肥京东方卓印科技有限公司 | Top-emitting display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108365115B (en) | 2019-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107256879A (en) | Organic electroluminescence display panel and preparation method thereof, organic light-emitting display device | |
| KR101990312B1 (en) | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same | |
| CN108365115B (en) | Electroluminescent device, display panel and preparation method thereof | |
| CN107359268B (en) | Transparent OLED display panel and manufacturing method thereof | |
| US10446798B2 (en) | Top-emitting WOLED display device | |
| CN106684112A (en) | Organic light emitting display device and manufacture method thereof | |
| CN102097455A (en) | Organic light emitting diode device | |
| CN102184937A (en) | Organic electroluminescence device and preparation method thereof | |
| CN106158905A (en) | Emitting device structure and organic luminous panel | |
| CN109768068A (en) | Top emitting white organic LED (WOLED) and preparation method thereof, display device | |
| CN106803511A (en) | Oled display panel | |
| CN106098954B (en) | A kind of organic electroluminescence device and preparation method thereof, display device | |
| CN110518152A (en) | Organic light emitting display panel and display device | |
| CN107359283B (en) | Preparation method, array substrate, display panel and the display device of array substrate | |
| CN101055922B (en) | Organize EL structure and its making method | |
| CN104617232B (en) | Organic Light-Emitting Diodes (OLED) manufacturing method and OLED | |
| CN207134357U (en) | Display panel and display device | |
| CN109585689A (en) | display panel, display device and manufacturing method thereof | |
| US10367038B2 (en) | Organic light-emitting diode display device and manufacturing method thereof, and organic light-emitting diode display | |
| CN109119438A (en) | Display base plate and its manufacturing method, display device | |
| KR102045035B1 (en) | Organic Light Emitting Device | |
| CN106298854B (en) | Organic light emitting display and preparation method thereof | |
| US11223031B2 (en) | Full color display module and manufacturing method of same | |
| KR100862068B1 (en) | White Organic Light Emitting Diode with Selective Doping Technique on Single Blue Host | |
| CN110323357A (en) | Organic Light Emitting Diode, display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |