CN108364666A - Power source drive device and random access memory - Google Patents
Power source drive device and random access memory Download PDFInfo
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- CN108364666A CN108364666A CN201810359851.3A CN201810359851A CN108364666A CN 108364666 A CN108364666 A CN 108364666A CN 201810359851 A CN201810359851 A CN 201810359851A CN 108364666 A CN108364666 A CN 108364666A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
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Abstract
The present invention provides a kind of power source drive device and random access memory for driving function module in random access memory, random access memory includes power source drive device, power source drive device includes driver and electric power driving module, and driver is connect via electric power driving module with function module；Driver includes driving PMOS tube and driving NMOS tube, driver is used for when first control signal cycle time being less than the predetermined time, second control signal is exported after the first control signal of input is delayed to electric power driving module, to postpone electric power driving module by being conducting to the triggering of closing along the time, with the turn-on time of extension function module；The present invention is by changing driver size, to extend the triggered time by being conducting to closing of electric power driving module in random access memory, is consumed with driver current when reducing the frequent unlatching of driver.
Description
Technical field
The present invention relates to random access memory, and in particular to a kind of for driving the power supply of function module in random access memory to drive
Dynamic device and random access memory.
Background technology
By serial transistor come control function module for power supply in random access memory, but concatenated transistor general number
It is larger with meet module work when power requirement, while need a driver control transistor opening and closing；Crystal
The opening and closing of pipe, for driver, along with the charging and discharging of transistor load, and driver needs to consume electricity
Stream.When function module frequent switching within the two states short time of lying fallow and work, transistor also therewith it is frequent open and
It closes, when transistor size is larger, the electric current of drive dissipation also increases, to make random access memory in the power supply in the region
Demand causes to bear, and influences the function of function module.
Invention content
The present invention provides a kind of power source drive device and random access memory for driving function module in random access memory,
To solve above at least one technical problem in the prior art.
In order to achieve the above objectives, a kind of power source drive device for driving function module in random access memory of the present invention,
Including：
Driver, including driving PMOS tube and driving NMOS tube, the source electrode and supply voltage (VCC) of the driving PMOS tube
Connection；The drain electrode of the driving PMOS tube and the drain electrode of the driving NMOS tube are connected to first node, the driving NMOS tube
Source electrode ground connection, it is described driving NMOS tube grid and it is described driving PMOS tube grid connection and second node, described second
Node is used to receive first control signal as the input terminal of the driver, and the first node is defeated as the driver
Outlet is for exporting second control signal；And
The output end of electric power driving module, the driver connects via the electric power driving module and the function module
It connects, the electric power driving module is used for the second control signal that is provided according to the output end of the driver to control the function
The working condition of module；
Wherein, the driving intensity of the driving PMOS tube is different from the driving driving intensity of NMOS tube, so as to work as institute
When stating first control signal cycle time less than the predetermined time, the second control signal controls the electric power driving module by leading
The triggering for leading to closing is triggered by closing to conducting along time lengthening along the time compared to the electric power driving module.
In a kind of embodiment, cycle time and the drive dissipation electric current that the electric power driving module is turned on and off
It is inversely proportional, be inversely proportional in the cycle time that the electric power driving module is turned on and off with the drive dissipation electric current curve
Gentle place chooses cycle time as the predetermined time, and the slope gently located is θ, wherein -0.01<θ<0.
In a kind of embodiment, the input terminal of the electric power driving module connects supply voltage, the electric power driving module
Output end connects the function module.
In a kind of embodiment, the electric power driving module includes the array of multiple PMOS tube compositions；
Wherein, the grid length of the driving PMOS tube is more than the grid length of the driving NMOS tube, so that the drive
The driving intensity of dynamic PMOS tube is less than the driving intensity of the driving NMOS tube, so as to work as the first control signal cycle time
When less than the predetermined time, the triggering that the second control signal is risen to high potential by low potential is more than first control along the time
Signal processed drops to the triggering of low potential along the time by high potential, to extend the PMOS tube by being conducting to time of closing.
In a kind of embodiment, the electric power driving module includes the array of multiple PMOS tube compositions；
Wherein, the active area width of the driving PMOS tube is less than the active area width of the driving NMOS tube, so that institute
The driving intensity for stating driving PMOS tube is less than the driving intensity of the driving NMOS tube, so as to work as the first control signal period
When time is less than the predetermined time, the second control signal rises to the triggering of high potential by low potential and is more than described the along the time
One control signal drops to the triggering of low potential along the time by high potential, with extend the PMOS tube by be conducting to closing when
Between.
In a kind of embodiment, the electric power driving module includes the array of multiple PMOS tube compositions；
Wherein, the active area width of the driving PMOS tube is less than the active area width of the driving NMOS tube and the drive
The grid length of dynamic PMOS tube is more than the grid length of the driving NMOS tube, so that the driving intensity of the driving PMOS tube is small
In the driving intensity of the driving NMOS tube, so that when the first control signal cycle time being less than the predetermined time, it is described
The triggering that second control signal is risen to high potential by low potential is declined more than the first control signal by high potential along the time
To low potential triggering along the time, to extend the PMOS tube by being conducting to time of closing.
In a kind of embodiment, the input terminal of the electric power driving module connects the function module low-pressure end, the power supply
The output end of drive module is grounded.
In a kind of embodiment, the electric power driving module includes the array of multiple NMOS tubes compositions；
Wherein, the grid length of the driving NMOS tube is more than the grid length of the driving PMOS tube, so that the drive
The driving intensity of dynamic NMOS tube is less than the driving intensity of the driving PMOS tube, so as to work as the first control signal cycle time
When less than the predetermined time, the triggering that the second control signal is dropped to low potential by high potential is more than first control along the time
Signal processed rises to the triggering of high potential along the time by low potential, to extend the NMOS tube by being conducting to time of closing.
In a kind of embodiment, the electric power driving module includes the array of multiple NMOS tubes compositions；
Wherein, the active area width of the driving NMOS tube is less than the active area width of the driving PMOS tube, so that institute
The driving intensity for stating driving NMOS tube is less than the driving intensity of the driving PMOS tube, so as to work as the first control signal period
When time is less than the predetermined time, the second control signal drops to the triggering of low potential by high potential and is more than described the along the time
One control signal rises to the triggering of high potential along the time by low potential, with extend the NMOS tube by be conducting to closing when
Between.
In a kind of embodiment, the electric power driving module includes the array of multiple NMOS tubes compositions；
Wherein, the grid length of the driving NMOS tube is more than the grid length of the driving PMOS tube and the driving
The active area width of NMOS tube is less than the active area width of the driving PMOS tube, so that the driving intensity of the driving NMOS tube
Less than the driving intensity of the driving PMOS tube, so that when the first control signal cycle time being less than the predetermined time, institute
It states second control signal the triggering of low potential is dropped to by high potential and be more than the first control signal by low potential along the time
The triggering of high potential is risen to along the time, to extend the NMOS tube by being conducting to time of closing.
In order to achieve the above objectives, a kind of random access memory of the present invention includes the power supply drive as described in above-described embodiment is any
Dynamic device.
The present invention uses above-mentioned technical proposal, has the following advantages that：The present invention is by extending the function module and power supply
Between metal-oxide-semiconductor by being conducting to the shut-in time, to reduce metal-oxide-semiconductor by the current maxima that is conducting to when closing, described in reduction
The total current of drive dissipation ensures random access memory the operation is stable.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Description of the drawings
In the accompanying drawings, unless specified otherwise herein, otherwise run through the identical reference numeral of multiple attached drawings and indicate same or analogous
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings are depicted only according to the present invention
Some disclosed embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is power source drive device circuit diagram in the embodiment of the present invention one；
Fig. 2 is control signal and drive dissipation current relationship figure in the embodiment of the present invention one；
Fig. 3 is the inverse ratio curve of first control signal cycle time and driver current consumption in the embodiment of the present invention one
Figure；
Fig. 4 is power source drive device circuit diagram in the embodiment of the present invention two；
Fig. 5 is control signal and drive dissipation current relationship figure in the embodiment of the present invention two.
Reference numeral：
110 function modules,
120 electric power driving modules,
121 PMOS tube,
122 NMOS tubes,
130 drivers,
131 driving PMOS tube,
132 driving NMOS tubes,
133 first nodes,
134 second nodes.
Specific implementation mode
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be changed by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
Embodiment one
The present embodiment it is a kind of for driving the power source drive device of function module 110 in random access memory, according to Fig. 1 and
Shown in Fig. 4, including driver 130 and electric power driving module 120.
Driver 130, the driver include driving PMOS tube 131 and driving NMOS tube 132, the driving PMOS tube
131 source electrode is connect with supply voltage；The drain electrode of the driving NMOS tube 132 is connect with the drain electrode of the driving PMOS tube 131
In first node 133, the source electrode ground connection of the driving NMOS tube 132, the grid of the driving NMOS tube 132 and the driving
Grid connection and the second node 134 of PMOS tube 131, the second node 134 are used for as the input terminal of the driver 130
First control signal is received, the first node 133 exports second control signal as the output end of the driver 130.
Electric power driving module 120, the output end of the driver 130 is via the electric power driving module 120 and the work(
Energy module 110 connects, the second control that the electric power driving module 120 is used to be provided according to the output end of the driver 130
Signal controls the working condition of the function module 110.
Wherein, with reference to shown in Fig. 2 and Fig. 5, the driving intensity and the driving NMOS tube 132 of the driving PMOS tube 131
Driving intensity it is different (size of the driving PMOS tube 131 is different from the driving size of NMOS tube 132), so as to work as institute
When stating first control signal cycle time T1 (T2) less than the predetermined time, the first control signal passes through the small drive of driving intensity
Dynamic metal-oxide-semiconductor generates second control signal, and (predetermined time is the crash time for the driving for driving metal-oxide-semiconductor, when the first control letter
Number cycle time T1 (T2) be more than the predetermined time when, it is described driving PMOS tube 131 and it is described driving NMOS tube 132 ruler
The very little triggering for not influencing the second control signal is along the time, when the cycle time T1 (T2) of the first control signal is less than institute
When stating the predetermined time, the size of the driving PMOS tube 131 and the driving NMOS tube 132 influences the second control signal
Triggering changes the frequency that first control signal period frequent control function module 110 switchs along the time, with this), described in control
Electric power driving module 120 by be conducting to the triggering of closing along the time compared to the electric power driving module 120 by closing to being connected
Triggering along time lengthening.
The working condition of the function module 110 includes：
State one：When the electric power driving module 120 is opened, the function module 110 is connect with power supply charge/put
Electricity；
State two：When the electric power driving module 120 disconnects, the function module 110 and power supply disconnect without charging/
Electric discharge.
In a specific embodiment, with reference to shown in Fig. 3, cycle time that the electric power driving module 120 is turned on and off with
The driver 130 consumes electric current and is inversely proportional, in the cycle time that the electric power driving module 120 is turned on and off and the drive
Dynamic device 130 consume electric current be inversely proportional curve gentle place selection cycle time as the predetermined time, it is described gently locate it is oblique
Rate is θ, wherein -0.01<θ<0.
With reference to shown in Fig. 3, the choosing method of predetermined time includes：
The cycle time being turned on and off with the electric power driving module 120 consumes the anti-of electric current with the driver 130
Plane coordinate system is built than curve, wherein the cycle time being turned on and off using the electric power driving module 120 is described as X-axis
It is Y-axis that driver 130, which consumes electric current,；
Multiple equal difference time values are chosen on the cycle time (X-axis) that the electric power driving module 120 is turned on and off, and
It chooses the corresponding driver 130 and consumes electric current (Y-axis) value composition coordinate points；
Two neighboring coordinate points (x1, y1), (x2, y2) are chosen in multiple coordinate points；
As (y2-y1)/y1<When 5%, i.e. slope -0.01 between two coordinate points<θ<0；
The line for choosing coordinate points (x1, y1) and (x2, y2) is gentle place, then chooses the value of x2 in coordinate points (x2, y2)
Value as predetermined time (Ts).
The electric power driving module 120 is controlled using driver 130 in the present embodiment, to control the function module 110
Working condition, and the driving current of PMOS tube 131 and the driving NMOS tube 132 are driven described in the driver 130
Size is different, so as to drive the driving intensity of PMOS tube 131 and the driving NMOS tube 132 described in the driver 130
Driving intensity is different, different along the time to make the control electric power driving module trigger when being turned on and off conversion, when the
When the cycle time T1 (T2) of one control signal is less than the predetermined time Ts, it is believed that the first control signal is frequently switches on
The signal of driver 130 is stated, first control signal generates second control signal to extend by the small driving metal-oxide-semiconductor of driving intensity
The electric power driving module 120 is by being conducting to time of closing, to extend 110 power-on time of the function module, to make
The total current drain within the unit interval of the driver 130 when the function module 110 is frequently switched in short time to reduce, so that
The random access memory meets power supply requirement, ensures the operation is stable of random access memory.
In a specific embodiment, according to Fig. 1, the input terminal of the electric power driving module 120 connects supply voltage, institute
The output end for stating electric power driving module 120 connects the function module 110.
In a specific embodiment, according to Fig. 1, the electric power driving module 120 includes what multiple PMOS tube 121 formed
Array；The size of the driving PMOS tube 131 and the driving NMOS tube 132 includes the grid length and/or metal-oxide-semiconductor of metal-oxide-semiconductor
Active area width.
Wherein, it is described driving PMOS tube 131 grid length be more than it is described driving NMOS tube 132 grid length and/or
The active area width of the driving PMOS tube 131 is less than the active area width of the driving NMOS tube 132, so that the driving
The driving intensity of PMOS tube 131 is less than the driving intensity of the driving NMOS tube 132, so as to work as the first control signal period
When time T1 is less than predetermined time Ts, with reference to shown in Fig. 2, the second control signal is risen to the triggering of high potential by low potential
It is more than the first control signal along the time and the triggering of low potential is dropped to along the time, to extend the PMOS tube by high potential
121 by being conducting to time of closing.
121 source electrode of the PMOS tube is connect with supply voltage, the drain electrode of the PMOS tube 121 and the function module 110
Connection, the grid of the PMOS tube 121 are connect with the output end of the driver 130.
Driving 131 grid length of PMOS tube is less than the grid length of the driving NMOS tube 132 and/or the driving
The active area width of PMOS tube 131 is less than the active area width of the driving NMOS tube 132, so that the driving PMOS tube 131
Driving intensity be less than it is described driving NMOS tube 132 driving intensity, as the cycle time T1 (T2) of the first control signal
When more than the predetermined time Ts, it is believed that the first control signal is not belonging to frequently control the switch of the function module 110
Signal, the size that the first control signal meets the driving PMOS tube 131 meet working stamndard, the second control letter of generation
Number triggering is along no influence, with reference to shown in Fig. 2, when the cycle time T1 of the first control signal is less than the predetermined time Ts
When, then assert that the first control signal belongs to and frequently controls 110 switching signal of the function module, the first control signal
The size for not meeting the driving PMOS tube 131 meets working stamndard, and the driving PMOS tube 131 is generated by low potential to high electricity
The triggering of position along the rise time compared to first control signal by the triggering of high potential to low potential along fall time extended the
Two control signals, i.e. the charging time of multiple PMOS tube 121 extends, to extend multiple PMOS tube 121 by being conducting to
The time of closing reduces the number of the switch of the function module 110, so that total power consumption that the driver 130 consumes reduces.
Embodiment two
Based on embodiment one, with reference to shown in Fig. 4, described in the input terminal connection of electric power driving module 120 described in the present embodiment
110 low-pressure end of function module, the output end ground connection of the electric power driving module 120.
In a specific embodiment, according to Fig.4, the electric power driving module 120 includes what multiple NMOS tubes 122 formed
Array；The size of the driving PMOS tube 131 and the driving NMOS tube 132 includes the grid length and/or metal-oxide-semiconductor of metal-oxide-semiconductor
Active area width.
Wherein, it is described driving NMOS tube 132 grid length be more than it is described driving PMOS tube 131 grid length and/or
The active area width of the driving NMOS tube 132 is less than the active area width of the driving PMOS tube 131, so that the driving
The driving intensity of NMOS tube 132 is less than the driving intensity of the driving PMOS tube 131, so as to work as the first control signal period
When time T2 is less than predetermined time Ts, referring to Figure 5, the second control signal is dropped to the triggering of low potential by high potential
It is more than the first control signal along the time and the triggering of high potential is risen to along the time, to extend the NMOS tube by low potential
122 by being conducting to time of closing.
The drain electrode of the NMOS tube 122 is connect with the low-pressure end of the function module 110, the source of multiple NMOS tubes 122
It is extremely grounded, and the grid of multiple NMOS tubes 122 is connect with the output end of the driver 130.
Driving 132 grid length of NMOS tube is less than the grid length of the driving PMOS tube 131 and/or the driving
The active area width of NMOS tube 132 is less than the active area width of the driving PMOS tube 131, so that the driving NMOS tube 132
Driving intensity be less than it is described driving PMOS tube 131 driving intensity, according to Fig.4, when the week of the first control signal
When time phase T1 (T2) is more than the predetermined time Ts, it is believed that being not belonging to of the first control signal frequently controls the function
Module switch signal, the size that the first control signal meets the driving NMOS tube 132 meet working stamndard, and the of generation
Two control signal triggerings are along no influence, referring to Figure 5, when the cycle time T2 of the first control signal is less than described make a reservation for
When time Ts, then assert that the first control signal belongs to and frequently control 110 switching signal of the function module, first control
The size that signal processed does not meet the driving NMOS tube 132 meets working stamndard, and the driving NMOS tube 132 is generated by high potential
Triggering to low potential is prolonged by the triggering of low potential to high potential along fall time along the rise time compared to first control signal
Long second control signal, the i.e. charging time of multiple NMOS tubes 122 extend, with extend multiple NMOS tubes 122 by
It is conducting to the time of closing, reduces the number of the switch of the function module 110, so that total power consumption that the driver 130 consumes
Reduce.
The opening and closing of multiple POMS pipes 120, and the driver are controlled in the present embodiment using driver 130
Drive 131 size of PMOS tube different with the size of the driving NMOS tube 132 described in 130, so that institute in the driver 130
The driving intensity for stating driving PMOS tube 131 is different with the driving intensity of the driving NMOS tube 132, so that the first control letter
Number cycle time T1 (T2) be less than predetermined time Ts when, driver 130 will produce by be conducting to close triggering along time lengthening
The second control signal so that 120 slowly closing of the electric power driving module is to extend the electric power driving module 120
The constant conduction time, to make the total current drain within the unit interval of the driver 130 reduce, so that described deposit at random
Reservoir meets power supply requirement, ensures the operation is stable of random access memory.
Embodiment three
A kind of random access memory of the present embodiment, the power source drive device including in embodiment one.This with
In machine memory, the driving intensity of driver 130 is set according to the quantity of the metal-oxide-semiconductor in the electric power driving module 120, to prolong
The constant conduction time of the electric power driving module 120 connected between long function module 110 and power supply frequently opens to reduce
Close the electric current of the consumption of the driver 130 when metal-oxide-semiconductor.
The driving intensity of metal-oxide-semiconductor specifically needs in the electric power driving module 120 in driver 130 described in the present embodiment
The quantity of metal-oxide-semiconductor determines, in the case where meeting need of work, metal-oxide-semiconductor is suitable for driving intensity in selection driver 130, to prolong
The constant conduction time of the metal-oxide-semiconductor connected between long function module 110 and power supply, to reduce driver in 110 He of function module
The electric current that the metal-oxide-semiconductor connected between power supply consumes when frequently switching on.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
In the description of the present invention, it is to be understood that, term "center", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on ... shown in the drawings or
Position relationship is merely for convenience of description of the present invention and simplification of the description, and does not indicate or imply the indicated device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be that machinery connects
It connects, can also be electrical connection, can also be communication；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the interaction relationship of the connection or two elements inside two elements.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature the "upper" of second feature or "lower"
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " side " and " above " include fisrt feature
Right over second feature and oblique upper, or it is merely representative of fisrt feature level height and is higher than second feature.Fisrt feature is
Two features " under ", " lower section " and " following " include fisrt feature right over second feature and oblique upper, or be merely representative of
One characteristic level height is less than second feature.
Above disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, above the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
Claims (11)
1. a kind of power source drive device for driving function module in random access memory, which is characterized in that including：
Driver, including driving PMOS tube and driving NMOS tube, the source electrode of the driving PMOS tube are connect with supply voltage；It is described
The drain electrode of driving PMOS tube and the drain electrode of the driving NMOS tube are connected to first node, and the source electrode of the driving NMOS tube connects
Ground, the grid connection of the grid of the driving NMOS tube and the driving PMOS tube and second node, the second node conduct
For receiving first control signal, the first node is used for the input terminal of the driver as the output end of the driver
Export second control signal；And
The output end of electric power driving module, the driver is connect via the electric power driving module with function module, the electricity
Source drive module is used for the second control signal that is provided according to the output end of the driver to control the work of the function module
Make state；Wherein, the driving intensity of the driving PMOS tube is different from the driving driving intensity of NMOS tube, so that when described
When first control signal cycle time is less than the predetermined time, the second control signal controls the electric power driving module by being connected
Triggering to closing is triggered by closing to conducting along time lengthening along the time compared to the electric power driving module.
2. power source drive device according to claim 1, which is characterized in that the electric power driving module was turned on and off
Cycle time is inversely proportional with the drive dissipation electric current, the cycle time being turned on and off in the electric power driving module and institute
State the be inversely proportional gentle place of curve of drive dissipation electric current and choose cycle time as the predetermined time, it is described gently locate it is oblique
Rate is θ, wherein -0.01<θ<0.
3. power source drive device according to claim 2, which is characterized in that the input terminal of the electric power driving module connects
The output end of supply voltage, the electric power driving module connects the function module.
4. power source drive device according to claim 3, which is characterized in that the electric power driving module includes multiple PMOS
The array of pipe composition；
Wherein, the grid length of the driving PMOS tube is more than the grid length of the driving NMOS tube, so that the driving
The driving intensity of PMOS tube is less than the driving intensity of the driving NMOS tube, so that when the first control signal cycle time is small
When the predetermined time, the triggering that the second control signal is risen to high potential by low potential is more than first control along the time
Signal drops to the triggering of low potential along the time by high potential, to extend the PMOS tube by being conducting to time of closing.
5. power source drive device according to claim 3, which is characterized in that the electric power driving module includes multiple PMOS
The array of pipe composition；
Wherein, the active area width of the driving PMOS tube is less than the active area width of the driving NMOS tube, so that the drive
The driving intensity of dynamic PMOS tube is less than the driving intensity of the driving NMOS tube, so as to work as the first control signal cycle time
When less than the predetermined time, the triggering that the second control signal is risen to high potential by low potential is more than first control along the time
Signal processed drops to the triggering of low potential along the time by high potential, to extend the PMOS tube by being conducting to time of closing.
6. power source drive device according to claim 3, which is characterized in that the electric power driving module includes multiple PMOS
The array of pipe composition；
Wherein, the active area width of the driving PMOS tube is less than the active area width of the driving NMOS tube and the driving
The grid length of PMOS tube is more than the grid length of the driving NMOS tube, so that the driving intensity of the driving PMOS tube is less than
The driving intensity of the driving NMOS tube, so that when the first control signal cycle time being less than the predetermined time, described the
The triggering that two control signals are risen to high potential by low potential is dropped to more than the first control signal by high potential along the time
The triggering of low potential is along the time, to extend the PMOS tube by being conducting to time of closing.
7. power source drive device according to claim 2, which is characterized in that the input terminal of the electric power driving module connects
The function module low-pressure end, the output end ground connection of the electric power driving module.
8. power source drive device according to claim 7, which is characterized in that the electric power driving module includes multiple NMOS
The array of pipe composition；
Wherein, the grid length of the driving NMOS tube is more than the grid length of the driving PMOS tube, so that the driving
The driving intensity of NMOS tube is less than the driving intensity of the driving PMOS tube, so that when the first control signal cycle time is small
When the predetermined time, the triggering that the second control signal is dropped to low potential by high potential is more than first control along the time
Signal rises to the triggering of high potential along the time by low potential, to extend the NMOS tube by being conducting to time of closing.
9. power source drive device according to claim 7, which is characterized in that the electric power driving module includes multiple NMOS
The array of pipe composition；
Wherein, the active area width of the driving NMOS tube is less than the active area width of the driving PMOS tube, so that the drive
The driving intensity of dynamic NMOS tube is less than the driving intensity of the driving PMOS tube, so as to work as the first control signal cycle time
When less than the predetermined time, the triggering that the second control signal is dropped to low potential by high potential is more than first control along the time
Signal processed rises to the triggering of high potential along the time by low potential, to extend the NMOS tube by being conducting to time of closing.
10. power source drive device according to claim 7, which is characterized in that the electric power driving module includes multiple
The array of NMOS tube composition；
Wherein, the grid length of the driving NMOS tube is more than the grid length of the driving PMOS tube and the driving NMOS tube
Active area width be less than it is described driving PMOS tube active area width so that it is described driving NMOS tube driving intensity be less than institute
The driving intensity of driving PMOS tube is stated, so that when the first control signal cycle time being less than the predetermined time, described second
Control signal by high potential drop to the triggering of low potential along the time be more than the first control signal risen by low potential it is supreme
The triggering of current potential is along the time, to extend the NMOS tube by being conducting to time of closing.
11. a kind of random access memory, which is characterized in that include the power source drive device as described in claims 1 to 10 is any.
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| CN201810359851.3A CN108364666A (en) | 2018-04-20 | 2018-04-20 | Power source drive device and random access memory |
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| CN201810359851.3A CN108364666A (en) | 2018-04-20 | 2018-04-20 | Power source drive device and random access memory |
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| CN108364666A true CN108364666A (en) | 2018-08-03 |
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| CN201810359851.3A Pending CN108364666A (en) | 2018-04-20 | 2018-04-20 | Power source drive device and random access memory |
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