CN108232007A - A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched - Google Patents
A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched Download PDFInfo
- Publication number
- CN108232007A CN108232007A CN201611191829.XA CN201611191829A CN108232007A CN 108232007 A CN108232007 A CN 108232007A CN 201611191829 A CN201611191829 A CN 201611191829A CN 108232007 A CN108232007 A CN 108232007A
- Authority
- CN
- China
- Prior art keywords
- magnetic tunnel
- tunnel junction
- gas
- trimming
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 75
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 24
- 230000006378 damage Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000003989 dielectric material Substances 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000009966 trimming Methods 0.000 claims abstract 11
- 239000010410 layer Substances 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 8
- 229910019236 CoFeB Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000001636 atomic emission spectroscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The method of magnetic tunnel junction after being etched the present invention provides a kind of trimming of gas cluster ion beam：Step 1：Hearth electrode substrate, and deposited magnetic tunnel knot multilayer film and hard mask film layer in substrate are provided；Step 2：Graphic definition magnetic tunnel junction pattern etches magnetic tunnel junction；Step 3：Gas cluster ion beam trims the magnetic tunnel junction side wall after etching to remove sidewall damage/sedimentary；Step 4：Deposit dielectrics, chemical polishing polish dielectric until the top of hard mask.Due to the lateral sputtering behavior of gas cluster ion beam, cluster or atomic energy are got at up to the every nook and cranny of magnetic tunnel junction being patterned, the damage that is covered in side wall and again sedimentary can effectively be removed, simultaneously, since the energy of each atom is very low, cluster gas atom will not bring new damage, be very beneficial for magnetic RAM magnetics, the promotion of electric property and the improvement of yield.
Description
Technical field
The present invention relates to the processing method of magnetic tunnel junction (MTJ, Magnetic Tunnel Junction) a kind of, specifically
It is related to a kind of use gas cluster ion beam (GCIB, Gas Cluster Ion Beam) to the magnetic tunnel junction after etching
(MTJ, Magnetic Tunnel Junction) technique that side wall is trimmed, belongs to magnetic memory manufacturing technology field.
Background technology
In recent years, using the MRAM of magnetic tunnel junction (MTJ) by it is believed that be following solid state non-volatile memory body,
It has the characteristics that high-speed read-write, large capacity and low energy consumption.Ferromagnetism MTJ is usually sandwich structure, wherein the note that is magnetic
Recall layer, it can change the direction of magnetization to record different data；Positioned at the tunnel barrier layer of intermediate insulation；Magnetic reference
Layer, positioned at the opposite side of tunnel barrier layer, its direction of magnetization is constant.
For information can be recorded in this magnetoresistive element, it is proposed that using based on spin momentum transfer or spin-transfer torque
The write method of (STT, Spin Transfer Torque) switch technology, such MRAM are known as STT-MRAM.According to magnetic polarization
The difference in direction, STT-MRAM are divided into as STT-MRAM in face and vertical STT-MRAM (i.e. pSTT-MRAM), and the latter has preferably
Performance.Method according to this, you can by providing spin polarized current to magnetoresistive element come the intensity of magnetization of inverting magnetization memory layer
Direction.In addition, the reduction of the volume with Magnetic memory layer, write or spin polarized current that conversion operation need to be injected is also smaller.
Therefore, this write method can be achieved at the same time device miniaturization and reduce electric current.
Meanwhile in view of switching electric current required when reducing MTJ element size can also reduce, so the pSTT- in terms of scale
MRAM can be very good mutually to agree with state-of-the-art technology node.Therefore, it is desirable to it is that pSTT-MRAM elements are made into minimum ruler
It is very little, and with extraordinary uniformity and the influence to MTJ magnetism is minimized, used preparation method can also be real
Show high good and the bad rate, pinpoint accuracy, high reliability, low energy consumption and remain adapted to the temperature coefficient that data well preserve.Meanwhile
Write operation is changed based on resistance state in nonvolatile memory, so as to need control thus caused to mtj memory device lifetime
Destruction and shortening.However, the fluctuation of MTJ resistance may be increased by preparing a small-sized MTJ element so that pSTT-MRAM's
Larger fluctuation can also be had therewith by writing voltage or electric current, can damage the performance of MRAM in this way.
In present MRAM manufacturing process, two kinds of etching technics of generally use to carry out magnetic tunnel junction it is miniature, the
One kind is ion beam etching (IBE, Ion Beam Etching), and second is reactive ion etching (RIE, Reactive Ion
Etching).Two kinds of lithographic techniques respectively have advantage and disadvantage, in order to obtain higher etch rate, it will usually which single ion acceleration is arrived
In very high energy range, energetic ion would generally destroy crystal structure, meanwhile, because of physical sputtering or chemical etching by-product
The deposition again of object can also increase, in general, after magnetic tunnel junction etching, side wall can form one layer of damaging layer/sedimentary, this
The magnetism and electric property of magnetic tunnel junction will be influenced, more there is victor, it will is directly resulted in from reference layer to the short of memory layer
Road, so as to be unfavorable for the raising of magnetic storage yield.
In recent years, gas cluster ion beam (GCIB, Gas Cluster Ion Beam), due to single ion low energy and horizontal stroke
To splash effect, it is considered to be it is a kind of it is highly effective receive/micro- surface treating implement, device is as shown in Figure 1；Cluster gas
The principle that (Gas Cluster) source generates cluster beam is to use the gas for being several times as much as standard atmospheric pressure, such as：Ar、O2、N2、CO2、NF3、
SF6Deng entering cluster by the fine nozzle 111 of a Sub-millimeter diameter occurs vacuum chamber 110, and it is swollen that ultrasonic adiabatic condensation occurs
It is swollen, gas molecule, atomic collision and form cluster, cluster generally with 500 to 10,000 atoms each other by Van der Waals force combine
Together；In the air-flow formed in supersonic expansion, actually only small part of gas forms cluster, and with larger hair
It dissipates, therefore, it is necessary to using the blocking diverging of beam splitting collimator apparatus, the non-cluster gas in edge, the gas group that straight line is only allowed to advance
Cluster leads to filter tow device (Skimmer) 112, and the collimation cluster air-flow of filtered beam device (Skimmer) 112 is immediately into high vacuum
Ionization system, i.e.,：Ionization chamber 120 is ionized by the electron bombardment of hot filament (electro-dissociator 121) transmitting, is formed positively charged
Cluster beam.These gas cluster ion beams are accelerated by extra electric field (accelerator 122), obtain higher-energy, into deflection magnetic
Field 123, in the process, monatomic and smaller cluster ions beam will shift, and larger cluster ions are not due to having
Process cavity 130 can then be entered by shifting.When cluster ions beam and 131 surface of substrate collide, cluster divides,
It forms smaller cluster or atom, increases atom lateral transfer, i.e., so-called lateral splash effect (Later Sputter
It Effect), will not surface generation damage simultaneously as the energy comparison of single atom is small；Such as：It is made of 2000 atoms
Cluster under the conditions of 20KeV, it is only 10eV to obtain energy by atom.
Invention content
The magnetic tunnel junction side wall after etching is trimmed using gas cluster ion beam the present invention provides a kind of
Method, include the following steps：
Step 1：Hearth electrode substrate, and deposited magnetic tunnel knot multilayer film and hard mask film layer in substrate are provided；
Step 2：Graphic definition magnetic tunnel junction pattern etches magnetic tunnel junction；
Step 3：Gas cluster ion beam is used to be trimmed to remove side wall to the magnetic tunnel junction side wall after being etched
Damage and/or sedimentary；
Step 4：Deposit dielectrics, chemical polishing polish dielectric until the top of hard mask film layer.
Further, gas is Ar, N used by gas cluster ion beam2、O2、CO、CO2、NO、N2O、NO、NO2、NH3、
H2、He、Ne、Xe、CF4、SF6、NF3、CHF3、CH2F2And CH4In one or several kinds.
Further, the accelerating potential range of gas cluster ion beam is 3KeV~60KeV.
Further, the irradiation dose range of gas cluster ion beam is 5 × 1013ions/cm2~5 × 1018ions/
cm2。
Further, gas cluster ion beam vertical incidence or incident using the irradiation angle less than 45 degree.
Further, irradiation angle selects 5 degree, 10 degree or 15 degree.
Further, in step 3, after being trimmed to side wall, one layer of side wall protective layer is deposited immediately.
Further, the material of side wall protective layer is selected from SiN, SiCN or SiC.
Further, side wall protective layer is obtained using chemical vapor deposition or atomic layer deposition.
Beneficial effects of the present invention：It is provided by the invention it is a kind of using gas cluster ion beam to the magnetic tunnel after etching
The method that road knot side wall is trimmed, due to the lateral sputtering behavior of GCIB, cluster or atomic energy get at and reach what is be patterned
The every nook and cranny of magnetic tunnel junction can effectively remove the damage that is covered in side wall and again sedimentary, simultaneously as each
The energy of atom is very low, and cluster gas atom will not bring new damage, is very beneficial for magnetic RAM magnetics, electricity
Learn the promotion of performance and the improvement of yield.
Description of the drawings
Fig. 1 is the knot of device that gas cluster ion beam of the present invention trims the magnetic tunnel junction side wall after etching
Structure schematic diagram；
Fig. 2 is the technique that the present invention trims the magnetic tunnel junction side wall after etching using gas cluster ion beam
Flow chart；
Fig. 3 is to provide the hearth electrode substrate of CMP planarization in the preferred embodiment of the present invention, and shape successively on it
Schematic diagram into after magnetic tunnel junction multilayer film and hard mask film layer；
Fig. 4 is the schematic diagram after being performed etching to magnetic tunnel junction in the preferred embodiment of the present invention；
Fig. 5 to Fig. 8 is in the preferred embodiment of the present invention, and the side wall of magnetic tunnel junction is trimmed in GCIB radiation
Schematic diagram；
Fig. 9 is in the preferred embodiment of the present invention, after being trimmed using GCIB to the side wall of magnetic tunnel junction
Schematic diagram；
Figure 10 is in the preferred embodiment of the present invention, deposits the schematic diagram after one layer of side wall protective layer；
Figure 11 be the present invention a preferred embodiment in, deposit dielectrics, and it is chemically-mechanicapolish polished until
Schematic diagram after at the top of hard mask；
Shown in figure：Vacuum chamber, 111- nozzles occur for 100- gas cluster ion beam flatening process devices, 110- clusters
(Nozzle), 112- filter beam devices (Skimmer), 120- ionization chambers, 121- electro-dissociators, 122- accelerators, 123- magnetic deflection fields,
130- process cavities, 131- substrates (wafer console), 210- hearth electrode substrates, 220- magnetic tunnel junction multilayer films, 230- are covered firmly
Mould film layer, 240- sidewall damages/sedimentary, 250- side wall protective layers, 260- dielectrics.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention uses using the form of simplification and non-essence
Accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It is provided by the invention a kind of the magnetic tunnel junction side wall after etching to be trimmed using gas cluster ion beam
Technique, due to the lateral sputtering behavior of GCIB, cluster or atomic energy are got at up to each of the magnetic tunnel junction being patterned
Corner can effectively remove the damage that is covered in side wall and again sedimentary, simultaneously as the energy of each atom is very
Low, cluster gas atom will not bring new damage.It is very beneficial for magnetic RAM magnetics, the promotion of electric property,
With the improvement of yield.Its forming step is as follows, as shown in Figure 2：
Step 1：Hearth electrode substrate 210, and deposited magnetic tunnel knot multilayer film 220 and hard mask film in substrate are provided
Layer 230, as shown in Figure 3；
Wherein, the overall thickness of magnetic tunnel junction (MTJ) multilayer film 220 is 15nm~40nm, can be by reference layer, potential barrier
Layer and memory layer the Bottom Pinned structures being superimposed upwards successively either by memory layer, barrier layer and reference layer according to
The secondary Top Pinned structures being superimposed upwards.
Further, reference layer has magnetic polarization invariance, is face inner mold (iSTT-MRAM) or vertical (pSTT- according to it
MRAM) structure is different.The reference layer of face inner mold (iSTT-MRAM) generally has (IrMn or PtMn)/CoFe/Ru/CoFe
Structure, preferred overall thickness are 10~30nm；The reference layer of vertical-type (pSTT-MRAM) generally has TbCoFe or [Co/Pt]nCo/Ru/[CoPt]mSuperlattice multilayer film structure, preferred overall thickness are 8~20nm.
Further, barrier layer is nonmagnetic metal oxide, preferably MgO or Al2O3, thickness is 0.5nm~3nm.
Further, memory layer polarizes with variable magnetic, is face inner mold (iSTT-MRAM) or vertical (pSTT- according to it
MRAM) institute is different again for structure.The memory layer of face inner mold iSTT-MRAM is generally CoFe/CoFeB or CoFe/NiFe, preferred thick
Spend for 2nm~6nm, vertical-type pSTT-MRAM memory layers be generally CoFeB, CoFe/CoFeB, Fe/CoFeB, CoFeB (Ta, W,
Mo)/CoFeB, preferred thickness are 0.8nm~2nm.
The thickness of hard mask film layer 230 is 20nm~100nm, selects Ta, TaN, W or WN etc. to be obtained in halogen plasma-based
It obtains and more preferably carves profile.
Step 2：220 pattern of graphic definition magnetic tunnel junction etches magnetic tunnel junction 220, as shown in Figure 4；More into one
Step ground, this step can be divided into the following steps：
(1) 220 pattern of graphic definition magnetic tunnel junction, and pattern is shifted to the top of magnetic tunnel junction 220；It crosses herein
Cheng Zhong, using a photoetching once etch (LE, lithography-etching) or Twi-lithography twice etching (LELE,
Lithography-etching-lithography-etching method) is completed the definition to magnetic tunnel junction 220 and is covered firmly
Reactive ion (RIE) etching of mould film layer 230, and remaining polymer is removed using RIE techniques simultaneously, so that pattern is transferred to
The top of magnetic tunnel junction 220.
(2) magnetic tunnel junction 220 is performed etching；
Wherein, etching technics may be used reactive ion etching (RIE, Reactive Ion Etching) and/or from
Beamlet etches (IBE, Ion Beam Etching).IBE is mainly used as ion source using Ar, Kr or Xe etc.；RIE is mainly used
CH3OH、CH4/Ar、C2H5OH、CH3OH/Ar or CO/NH3Deng as main etching gas；And use emission spectrometer (OES,
Optical Emission Spectroscopy) or ion microprobe (SIMS, Second Ion Mass
Spectroscopy) judge etching terminal signal.
Step 3：Gas cluster ion beam trims the magnetic tunnel junction side wall after etching to remove side wall damage
Wound/sedimentary 240, as shown in Figures 5 to 9；Due to the lateral sputtering behavior of GCIB, cluster or atomic energy are got at up to by pattern
The every nook and cranny of the magnetic tunnel junction of change, Fig. 5 to Fig. 8 arrive at the different zones of the magnetic tunnel after etching, cluster for cluster
Generate the schematic diagram laterally sputtered；Wherein, gas used by gas cluster ion beam (GCIB, Gas Cluster Ion Beam)
Body is Ar, N2、O2、CO、CO2、NO、N2O、NO、NO2、NH3、H2、He、Ne、Xe、CF4、SF6、NF3、CHF3、CH2F2And CH4In
One or several kinds, the accelerating potential of GCIB are differed for 3KeV to 60KeV, and irradiation dose (irradiation dose) is 5 ×
1013To 5 × 1018ions/cm2Differ.
Preferably, it usually selects GCIB vertical incidence or selects the irradiation angle (irradiation of low-angle
angle：θ), such as：5 degree, 10 degree or 15 degree etc..
Preferably, one layer of side wall protective layer 250 can be deposited immediately after side wall trims technique, as shown in Figure 10,
Its material is selected from SiN, SiCN or SiC etc., generally use chemical vapor deposition (CVD, Chemical Vapor
Deposition) or the mode of atomic layer deposition (ALD, Atomic Layer Deposition) is realized.
Step 4：Deposit dielectrics 260, chemical polishing polish dielectric until the top of hard mask film layer 230, such as Figure 11
It is shown；Wherein, dielectric 260 is SiO2Or low-k (low-k) dielectric, such as：HSQ, MSQ or SiOCH etc.；
More specifically, low-k (low-k) dielectric refers to dielectric constant (k) less than silica (k=3.9)
Material, in the specific implementation, low-k materials can be hydrogeneous silicate (Hydrogen Silsequioxane, HSQ, k=2.8
~3.0), containing Si-CH3Functional group salt containing methane-siliconic acid (Methylsilsesquioxane, MSQ, k=2.5~
2.7), the hybrid organic siloxane polymer synthesized by the comprehensive hydrogeneous silicates HSQ and MSQ of salt containing methane-siliconic acid
(Hybrid Organic Siloxane Polymer, HOSP) film (k=2.5), porous SiOCH films (k=2.3~
2.7), it might even be possible to using organics such as the porosity silicates (Porous Silicate) of ultralow dielectric (k≤2.0)
High-molecular compound and the porous SiOCH films that dielectric constant (k) is 1.9.
The preferred embodiment of the present invention described in detail above.It should be appreciated that those of ordinary skill in the art without
Creative work is needed according to the present invention can to conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be in the protection domain being defined in the patent claims.
Claims (10)
- A kind of 1. method for trimming the magnetic tunnel junction after being etched, which is characterized in that using gas cluster ion beam to etching Magnetic tunnel junction later is trimmed.
- 2. a kind of method for trimming the magnetic tunnel junction after being etched according to claim 1, which is characterized in that including such as Lower step：Step 1：Hearth electrode substrate, and deposited magnetic tunnel knot multilayer film and hard mask film layer on the substrate are provided；Step 2：Graphic definition magnetic tunnel junction pattern, etches the magnetic tunnel junction；Step 3：Gas cluster ion beam is used to be trimmed to remove side wall to the magnetic tunnel junction side wall after being etched Damage and/or sedimentary；Step 4：Deposit dielectrics, chemical polishing polish the dielectric until the top of the hard mask film layer.
- A kind of 3. method for trimming the magnetic tunnel junction after being etched according to claim 2, which is characterized in that the gas Gas is Ar, N used by body cluster ions beam2、O2、CO、CO2、NO、N2O、NO、NO2、NH3、H2、He、Ne、Xe、CF4、SF6、 NF3、CHF3、CH2F2And CH4In one or several kinds.
- A kind of 4. method for trimming the magnetic tunnel junction after being etched according to claim 2, which is characterized in that the gas The accelerating potential range of body cluster ions beam is 3KeV~60KeV.
- A kind of 5. method for trimming the magnetic tunnel junction after being etched according to claim 2, which is characterized in that the gas The irradiation dose range of body cluster ions beam is 5 × 1013ions/cm2~5 × 1018ions/cm2。
- A kind of 6. method for trimming the magnetic tunnel junction after being etched according to claim 2, which is characterized in that the gas Body cluster ions beam vertical incidence is incident using the irradiation angle less than 45 degree.
- A kind of 7. method for trimming the magnetic tunnel junction after being etched according to claim 6, which is characterized in that the spoke Irradiation angle selects 5 degree, 10 degree or 15 degree.
- A kind of 8. method for trimming the magnetic tunnel junction after being etched according to claim 2, which is characterized in that step 3 In, after being trimmed to the side wall, one layer of side wall protective layer is deposited immediately.
- A kind of 9. method for trimming the magnetic tunnel junction after being etched according to claim 8, which is characterized in that the side The material of wall protective layer is selected from SiN, SiCN or SiC.
- 10. a kind of method for trimming the magnetic tunnel junction after being etched according to claim 8, which is characterized in that described Side wall protective layer is obtained using chemical vapor deposition or atomic layer deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611191829.XA CN108232007A (en) | 2016-12-21 | 2016-12-21 | A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611191829.XA CN108232007A (en) | 2016-12-21 | 2016-12-21 | A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108232007A true CN108232007A (en) | 2018-06-29 |
Family
ID=62651827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611191829.XA Pending CN108232007A (en) | 2016-12-21 | 2016-12-21 | A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108232007A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111490151A (en) * | 2019-01-28 | 2020-08-04 | 上海磁宇信息科技有限公司 | Method for manufacturing subminiature magnetic random access memory array |
| CN111490152A (en) * | 2019-01-28 | 2020-08-04 | 上海磁宇信息科技有限公司 | Method for manufacturing subminiature magnetic random access memory array |
| CN111864058A (en) * | 2020-07-29 | 2020-10-30 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| CN111864059A (en) * | 2020-07-29 | 2020-10-30 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| WO2020228579A1 (en) * | 2019-05-16 | 2020-11-19 | 浙江驰拓科技有限公司 | Manufacturing method for mram device |
| CN112635658A (en) * | 2019-09-24 | 2021-04-09 | 浙江驰拓科技有限公司 | Method for preparing magnetic random access memory |
| CN112740431A (en) * | 2018-09-25 | 2021-04-30 | 应用材料公司 | Method for forming a top contact of a magnetic tunnel junction |
| CN113458875A (en) * | 2021-06-21 | 2021-10-01 | 武汉大学深圳研究院 | Cluster ion beam high-temperature polishing method and device with wide target temperature controllable range |
| CN113838883A (en) * | 2020-06-24 | 2021-12-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and method of forming semiconductor structure |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1860593A (en) * | 2003-09-30 | 2006-11-08 | 日本航空电子工业株式会社 | Method and device for flattening surface of solid |
| CN101515566A (en) * | 2008-02-18 | 2009-08-26 | 台湾积体电路制造股份有限公司 | Method for manufacturing integrated circuit |
| CN101548366A (en) * | 2006-10-30 | 2009-09-30 | 日本航空电子工业株式会社 | Solid surface planarization method and solid surface planarization device using gas cluster ion beam |
| CN101563760A (en) * | 2006-10-30 | 2009-10-21 | 日本航空电子工业株式会社 | Method for flattening solid surface with gas cluster ion beam, and solid surface flattening device |
| CN101563759A (en) * | 2006-10-30 | 2009-10-21 | 日本航空电子工业株式会社 | Method of working solid surface with gas cluster ion beam |
| CN102823008A (en) * | 2010-03-29 | 2012-12-12 | 高通股份有限公司 | Fabricating a magnetic tunnel junction storage element |
| WO2014136855A1 (en) * | 2013-03-07 | 2014-09-12 | 東京エレクトロン株式会社 | Planarization method, substrate treatment system, mram manufacturing method, and mram element |
| US20150044781A1 (en) * | 2013-08-09 | 2015-02-12 | Ken Tokashiki | Method of forming magnetic memory devices |
| CN104425706A (en) * | 2013-09-03 | 2015-03-18 | 台湾积体电路制造股份有限公司 | Reversed stack MTJ |
| CN104576921A (en) * | 2007-11-20 | 2015-04-29 | 高通股份有限公司 | Method of forming a magnetic tunnel junction structure |
| WO2015137172A1 (en) * | 2014-03-12 | 2015-09-17 | 東京エレクトロン株式会社 | Semiconductor device production method and production apparatus |
| CN105706259A (en) * | 2014-07-25 | 2016-06-22 | 斯平转换技术公司 | Method for manufacturing MTJ memory device |
-
2016
- 2016-12-21 CN CN201611191829.XA patent/CN108232007A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1860593A (en) * | 2003-09-30 | 2006-11-08 | 日本航空电子工业株式会社 | Method and device for flattening surface of solid |
| CN101548366A (en) * | 2006-10-30 | 2009-09-30 | 日本航空电子工业株式会社 | Solid surface planarization method and solid surface planarization device using gas cluster ion beam |
| CN101563760A (en) * | 2006-10-30 | 2009-10-21 | 日本航空电子工业株式会社 | Method for flattening solid surface with gas cluster ion beam, and solid surface flattening device |
| CN101563759A (en) * | 2006-10-30 | 2009-10-21 | 日本航空电子工业株式会社 | Method of working solid surface with gas cluster ion beam |
| CN104576921A (en) * | 2007-11-20 | 2015-04-29 | 高通股份有限公司 | Method of forming a magnetic tunnel junction structure |
| CN101515566A (en) * | 2008-02-18 | 2009-08-26 | 台湾积体电路制造股份有限公司 | Method for manufacturing integrated circuit |
| CN102823008A (en) * | 2010-03-29 | 2012-12-12 | 高通股份有限公司 | Fabricating a magnetic tunnel junction storage element |
| WO2014136855A1 (en) * | 2013-03-07 | 2014-09-12 | 東京エレクトロン株式会社 | Planarization method, substrate treatment system, mram manufacturing method, and mram element |
| US20150044781A1 (en) * | 2013-08-09 | 2015-02-12 | Ken Tokashiki | Method of forming magnetic memory devices |
| CN104425706A (en) * | 2013-09-03 | 2015-03-18 | 台湾积体电路制造股份有限公司 | Reversed stack MTJ |
| WO2015137172A1 (en) * | 2014-03-12 | 2015-09-17 | 東京エレクトロン株式会社 | Semiconductor device production method and production apparatus |
| CN105706259A (en) * | 2014-07-25 | 2016-06-22 | 斯平转换技术公司 | Method for manufacturing MTJ memory device |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112740431A (en) * | 2018-09-25 | 2021-04-30 | 应用材料公司 | Method for forming a top contact of a magnetic tunnel junction |
| CN111490151A (en) * | 2019-01-28 | 2020-08-04 | 上海磁宇信息科技有限公司 | Method for manufacturing subminiature magnetic random access memory array |
| CN111490152A (en) * | 2019-01-28 | 2020-08-04 | 上海磁宇信息科技有限公司 | Method for manufacturing subminiature magnetic random access memory array |
| CN111490151B (en) * | 2019-01-28 | 2023-06-02 | 上海磁宇信息科技有限公司 | Method for manufacturing microminiature magnetic random access memory array |
| CN111490152B (en) * | 2019-01-28 | 2023-12-22 | 上海磁宇信息科技有限公司 | Method for manufacturing microminiature magnetic random access memory array |
| WO2020228579A1 (en) * | 2019-05-16 | 2020-11-19 | 浙江驰拓科技有限公司 | Manufacturing method for mram device |
| CN112635658A (en) * | 2019-09-24 | 2021-04-09 | 浙江驰拓科技有限公司 | Method for preparing magnetic random access memory |
| CN113838883A (en) * | 2020-06-24 | 2021-12-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and method of forming semiconductor structure |
| CN111864058A (en) * | 2020-07-29 | 2020-10-30 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| CN111864059A (en) * | 2020-07-29 | 2020-10-30 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| CN111864058B (en) * | 2020-07-29 | 2023-04-18 | 浙江驰拓科技有限公司 | Preparation method of storage bit and preparation method of MRAM |
| CN113458875A (en) * | 2021-06-21 | 2021-10-01 | 武汉大学深圳研究院 | Cluster ion beam high-temperature polishing method and device with wide target temperature controllable range |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108232007A (en) | A kind of method that gas cluster ion beam trims the magnetic tunnel junction after being etched | |
| US9406876B2 (en) | Method for manufacturing MTJ memory device | |
| JP2019071480A (en) | Device for manufacturing magnetic memory and method for providing magnetic junction | |
| US20130248355A1 (en) | Method of manufacturing magnetoresistive element | |
| CN108232002B (en) | Method for preparing magnetic tunnel junction array | |
| CN108242502B (en) | A method of fabricating a magnetic tunnel junction | |
| CN108232009A (en) | A kind of method for making magnetic RAM | |
| CN107658324A (en) | A kind of alignment of MTJ and forming method | |
| US20160020386A1 (en) | Method of manufacturing magnetic device | |
| CN109713121B (en) | Method for manufacturing magnetic random access memory cell array and peripheral circuit thereof | |
| CN108063184A (en) | A kind of manufacturing method for preventing magnetic RAM memory layer and reference layer short circuit | |
| CN109087993A (en) | A method of making magnetic RAM top electrode hole | |
| CN108232010B (en) | Method for flattening magnetic tunnel junction bottom electrode by gas cluster ion beam | |
| CN109994600A (en) | A kind of production method of magnetic RAM | |
| US20230263069A1 (en) | Memory device and manufacturing method thereof | |
| CN108232000A (en) | A kind of method for manufacturing microminiature magnetic random store-memory unit | |
| CN109713120A (en) | A kind of manufacturing method of magnetic RAM cell array and peripheral circuit line | |
| CN109713119A (en) | A kind of manufacturing method of magnetic RAM cell array and peripheral circuit line | |
| CN111613571B (en) | Method for manufacturing magnetic random access memory cell array | |
| CN108735895A (en) | Magnetic RAM hearth electrode contact and forming method thereof | |
| US20140212993A1 (en) | Method of manufacturing a magnetoresistive device | |
| CN108807664A (en) | A method of making small-size magnetic accidental memory structure unit | |
| CN108231821B (en) | Method for preparing magnetic tunnel junction array by oxygen gas cluster ion beam | |
| CN108242503B (en) | A method for optimizing magnetic tunnel junctions | |
| CN111490151B (en) | Method for manufacturing microminiature magnetic random access memory array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180629 |